TWI555623B - Method of cutting ceramic substrate - Google Patents
Method of cutting ceramic substrate Download PDFInfo
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- TWI555623B TWI555623B TW102100973A TW102100973A TWI555623B TW I555623 B TWI555623 B TW I555623B TW 102100973 A TW102100973 A TW 102100973A TW 102100973 A TW102100973 A TW 102100973A TW I555623 B TWI555623 B TW I555623B
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- 239000000758 substrate Substances 0.000 title claims description 65
- 239000000919 ceramic Substances 0.000 title claims description 20
- 238000005520 cutting process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 7
- 230000035699 permeability Effects 0.000 claims description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 18
- 230000035515 penetration Effects 0.000 description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
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- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05C—BOLTS OR FASTENING DEVICES FOR WINGS, SPECIALLY FOR DOORS OR WINDOWS
- E05C1/00—Fastening devices with bolts moving rectilinearly
- E05C1/08—Fastening devices with bolts moving rectilinearly with latching action
- E05C1/10—Fastening devices with bolts moving rectilinearly with latching action with operating handle or equivalent member rigid with the latch
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- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
- E05B1/00—Knobs or handles for wings; Knobs, handles, or press buttons for locks or latches on wings
-
- E—FIXED CONSTRUCTIONS
- E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
- E05C—BOLTS OR FASTENING DEVICES FOR WINGS, SPECIALLY FOR DOORS OR WINDOWS
- E05C3/00—Fastening devices with bolts moving pivotally or rotatively
- E05C3/12—Fastening devices with bolts moving pivotally or rotatively with latching action
- E05C3/14—Fastening devices with bolts moving pivotally or rotatively with latching action with operating handle or equivalent member rigid with the latch
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Description
本發明係關於一種於刻劃氧化鋁基板等陶瓷基板後進行分斷之陶瓷基板之切斷方法。 The present invention relates to a method of cutting a ceramic substrate which is divided after a ceramic substrate such as an alumina substrate is cut.
先前於切斷玻璃基板之情形時，係利用刻劃裝置進行刻劃(形成刻劃線)，之後利用分斷裝置予以分斷。於利用刻劃裝置進行刻劃之情形時，若刻劃深度較淺，則於分斷時端面容易產生龜裂。另一方面，若深度較深則容易分離，且即便在其後之分斷後，端面之毛刺亦較小或者不易產生龜裂，端面品質趨於良好。因此，藉由將龜裂滲透率加深為例如板厚之80%左右，而可提昇品質地進行切斷。 In the case of cutting the glass substrate, the scoring device is used to perform scribing (forming a score line), and then it is separated by a breaking device. When the scoring device is used for scribing, if the scoring depth is shallow, cracks are likely to occur at the end faces at the time of breaking. On the other hand, if the depth is deep, it is easy to separate, and even after the subsequent breaking, the burrs of the end faces are small or cracks are less likely to occur, and the end face quality tends to be good. Therefore, by increasing the crack penetration rate to, for example, about 80% of the sheet thickness, the cutting can be performed with improved quality.
然而，由於陶瓷基板較玻璃基板更硬，故於藉由刻劃及分斷而進行切斷時，刻劃輪容易產生磨損。因此，通常於切斷之情形時藉由切割(dicing)而執行分斷。 However, since the ceramic substrate is harder than the glass substrate, the scoring wheel is likely to be worn when the cutting is performed by scribing and breaking. Therefore, the division is usually performed by dicing in the case of cutting.
專利文獻1中提出一種方法，其對於陶瓷基板中硬度較低之低溫共燒陶瓷基板(LTCC(Low Temperature Co-fired Ceramic)基板)，不進行切割而是進行刻劃，從而予以分斷。 Patent Document 1 proposes a method of cutting a low temperature co-fired ceramic substrate (LTCC (Low Temperature Co-fired Ceramic) substrate) having a low hardness in a ceramic substrate without performing dicing.
[專利文獻1]日本專利特開2010-194784號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-194784
發明者等人使用刀尖角度為120°之刻劃輪，使對於LTCC基板之龜裂滲透率在10%~80%內變化而進行刻劃，之後予以分斷。針對分斷後之端面，測量中心線平均粗糙度Ra及最大高度Ry，作為粗糙度評估。圖1A、圖1B係表示上述變化之曲線。此情形時，如圖1A、圖1B所示，發明者等人發現：無論龜裂滲透率為何，分斷後之端面之粗糙度皆不太有變化；及龜裂滲透率若為20%以下則斷面會產生龜裂，且分斷後之端面之品質劣化。 The inventors and the like used a scribe wheel having a blade tip angle of 120° to scribe the crack permeability of the LTCC substrate within 10% to 80%, and then cut it. For the end face after the break, the center line average roughness Ra and the maximum height Ry were measured as roughness evaluation. 1A and 1B are graphs showing the above changes. In this case, as shown in FIG. 1A and FIG. 1B, the inventors and the like found that the roughness of the end face after the breaking does not change anyway regardless of the crack permeability; and if the crack permeability is 20% or less Cracks are generated in the cross section, and the quality of the end face after the breakage deteriorates.
另一方面，本發明者等人發現：如為用作電子零件之安裝用基板之氧化鋁基板等陶瓷基板，若使用刀尖角度135°以下之刻劃輪並增大龜裂滲透率，則該種趨勢不成立，而有端面品質反而劣化之情形。 On the other hand, the inventors of the present invention have found that if a ceramic substrate such as an alumina substrate used as a mounting substrate for an electronic component is used, if a scriber having a blade angle of 135 or less is used and the crack permeability is increased, This trend does not hold, but there is a situation in which the quality of the end face is degraded.
本發明之目的在於藉由刻劃並分斷氧化鋁基板等陶瓷基板而予以切斷時提昇端面品質。 An object of the present invention is to improve the quality of an end surface by cutting and breaking a ceramic substrate such as an alumina substrate.
為了解決上述問題，本發明之切斷方法係鋁系陶瓷基板之切斷方法，其對於陶瓷基板，利用刀尖角度135°以下(尤其125°以下、通常為90°以上、尤其100°以上)之刻劃輪，以50%以下(尤其40%以下、通常為5%以上、尤其10%以上、例如20~30%)之龜裂滲透率進行刻劃，並沿著利用上述刻劃輪而形成之刻劃線予以分斷。 In order to solve the above problems, the cutting method of the present invention is a method for cutting an aluminum-based ceramic substrate, wherein the ceramic substrate has a blade tip angle of 135° or less (especially 125° or less, usually 90° or more, particularly 100° or more). The engraved wheel is scored with a crack penetration rate of 50% or less (especially 40% or less, usually 5% or more, especially 10% or more, for example, 20 to 30%), and along with the above-mentioned scoring wheel The scribe line is formed to be broken.
此處，上述陶瓷基板可為氧化鋁基板及氮化鋁基板之任一者。 Here, the ceramic substrate may be either an alumina substrate or an aluminum nitride substrate.
此處，上述刻劃步驟亦可使刻劃輪之刀尖角度越小則龜裂滲透率越低。 Here, the above scribing step may also make the crack penetration rate lower as the blade tip angle of the scoring wheel is smaller.
根據具有此種特徵之本發明，針對鋁系陶瓷基板、尤其氧化鋁基板或氮化鋁基板，以龜裂滲透率為50%以下之狀態進行刻劃，其後予以分斷。如此可確保端面品質而切斷陶瓷基板。 According to the present invention having such a feature, the aluminum-based ceramic substrate, particularly the alumina substrate or the aluminum nitride substrate, is scored in a state in which the crack permeability is 50% or less, and then divided. In this way, the ceramic substrate can be cut by ensuring the quality of the end face.
圖1A係表示針對LTCC基板改變龜裂滲透率時之端面之中心線平均粗糙度Ra之曲線。 Fig. 1A is a graph showing the center line average roughness Ra of the end face when the crack permeability is changed for the LTCC substrate.
圖1B係表示針對LTCC基板改變龜裂滲透率時之端面之最大高度Ry之曲線。 Fig. 1B is a graph showing the maximum height Ry of the end face when the crack permeability is changed for the LTCC substrate.
圖2A係表示刀尖角度100°時針對本發明之對象即氧化鋁基板改變龜裂滲透率時之端面之中心線平均粗糙度Ra之曲線。 Fig. 2A is a graph showing the center line average roughness Ra of the end face when the crack permeability is changed for the alumina substrate which is the object of the present invention when the cutting edge angle is 100°.
圖2B係表示刀尖角度100°時針對本發明之對象即氧化鋁基板改變龜裂滲透率時之端面之最大高度Ry之曲線。 Fig. 2B is a graph showing the maximum height Ry of the end face when the crack permeability is changed for the alumina substrate which is the object of the present invention when the cutting edge angle is 100°.
圖3A係表示刀尖角度120°時針對本發明之對象即氧化鋁基板改變龜裂滲透率時之端面之中心線平均粗糙度Ra之曲線。 Fig. 3A is a graph showing the center line average roughness Ra of the end face when the crack permeability is changed for the alumina substrate which is the object of the present invention when the blade angle is 120°.
圖3B係表示刀尖角度120°時針對本發明之對象即氧化鋁基板改變龜裂滲透率時之端面之最大高度Ry之曲線。 Fig. 3B is a graph showing the maximum height Ry of the end face when the crack permeability is changed for the alumina substrate which is the object of the present invention at a blade angle of 120°.
圖4A係表示刀尖角度130°時針對本發明之對象即氧化鋁基板改變龜裂滲透率時之端面之中心線平均粗糙度Ra之曲線。 4A is a graph showing the center line average roughness Ra of the end face when the crack permeability is changed for the alumina substrate which is the object of the present invention at a blade tip angle of 130°.
圖4B係表示刀尖角度130°時針對本發明之對象即氧化鋁基板改變龜裂滲透率時之端面之最大高度Ry之曲線。 Fig. 4B is a graph showing the maximum height Ry of the end face when the crack permeability is changed for the alumina substrate which is the object of the present invention at a blade tip angle of 130°.
圖5A係表示使用刀尖角度120°之刻劃輪以龜裂滲透率10%刻劃氧化鋁基板時之端面之圖。 Fig. 5A is a view showing an end face when the aluminum alloy substrate is scored at a crack penetration rate of 10% using a dicing angle of 120°.
圖5B係表示使用刀尖角度120°之刻劃輪以龜裂滲透率20%刻劃氧化鋁基板時之端面之圖。 Fig. 5B is a view showing an end face when the aluminum alloy substrate is scored at a crack penetration rate of 20% using a dicing angle of 120°.
圖5C係表示使用刀尖角度120°之刻劃輪以龜裂滲透率30%刻劃氧化鋁基板時之端面之圖。 Fig. 5C is a view showing an end face when the aluminum alloy substrate is scored at a crack penetration rate of 30% using a dicing angle of 120°.
圖5D係表示使用刀尖角度120°之刻劃輪以龜裂滲透率70%刻劃氧化鋁基板時之端面之圖。 Fig. 5D is a view showing an end face when the aluminum alloy substrate is scored with a crack penetration rate of 70% using a dicing angle of 120°.
圖6A係表示以刀尖角度120°針對本發明之對象即氮化鋁基板改 變龜裂滲透率時之端面之中心線平均粗糙度Ra之曲線。 Figure 6A shows the modification of the aluminum nitride substrate for the object of the present invention with a tip angle of 120°. The curve of the center line average roughness Ra of the end face when the crack permeability is changed.
圖6B係表示以刀尖角度120°針對本發明之對象即氮化鋁基板改變龜裂滲透率時之端面之最大高度Ry之曲線。 Fig. 6B is a graph showing the maximum height Ry of the end face when the crack permeability is changed for the aluminum nitride substrate which is the object of the present invention at a blade angle of 120°.
圖7A係表示使用刀尖角度120°之刻劃輪以龜裂滲透率10%刻劃氮化鋁基板時之端面之圖。 Fig. 7A is a view showing an end face when a silicon nitride substrate is scored at a crack penetration rate of 10% using a dicing angle of 120°.
圖7B係表示使用刀尖角度120°之刻劃輪以龜裂滲透率20%刻劃氮化鋁基板時之端面之圖。 Fig. 7B is a view showing an end face when the aluminum nitride substrate is scored at a crack penetration rate of 20% using a dicing angle of 120°.
圖7C係表示使用刀尖角度120°之刻劃輪以龜裂滲透率30%刻劃氮化鋁基板時之端面之圖。 Fig. 7C is a view showing the end face of the aluminum nitride substrate at a crack penetration rate of 30% using a dicing angle of 120°.
圖7D係表示使用刀尖角度120°之刻劃輪以龜裂滲透率70%刻劃氮化鋁基板時之端面之圖。 Fig. 7D is a view showing an end face when the aluminum nitride substrate is scribed with a crack penetration rate of 70% using a dicing angle of 120°.
成為本發明之對象之基板係含鋁之陶瓷基板，例如係氧化鋁基板或氮化鋁基板。氧化鋁基板係氧化鋁(Al2O3)之含有率例如為90重量%以上、而其他部分則混入黏合劑(燒結助劑)等添加物者，廣泛用作半導體晶片等之基板。於使用氧化鋁基板作為晶片零件之基板之情形時，例如切斷為2 mm見方以下(1 mm見方等)之小晶片狀。於用作安裝多個零件等之基板之情形時，必須切斷為例如100 mm見方等較大之尺寸。於斷開為晶片零件之基板用途之情形時，若零件相鄰，則大多情形時無法使用刻劃之刀尖角度較大之刻劃輪。因此，發明者針對氧化鋁基板，於135°以下適當改變刻劃裝置之刻劃輪、刻劃刀尖之角度，而使龜裂滲透率改變，於刻劃後予以分斷，並評估端面品質。 The substrate to be the object of the present invention is an aluminum-containing ceramic substrate, for example, an alumina substrate or an aluminum nitride substrate. The alumina substrate-based alumina (Al 2 O 3 ) content is, for example, 90% by weight or more, and the other portion is mixed with an additive such as a binder (sintering aid), and is widely used as a substrate for a semiconductor wafer or the like. When an alumina substrate is used as the substrate of the wafer component, for example, it is cut into a small wafer shape of 2 mm square or less (1 mm square, etc.). When it is used as a substrate for mounting a plurality of parts or the like, it must be cut to a large size such as 100 mm square. In the case of disconnecting the substrate for use as a wafer component, if the components are adjacent to each other, in many cases, the scribe wheel with a large knives angle can not be used. Therefore, the inventor appropriately changed the angle of the scoring wheel and the scriber tip of the scoring device for the alumina substrate at 135° or less, thereby changing the crack permeability, breaking after scribing, and evaluating the end face quality. .
發明者等人使用刀尖角度為100°之刻劃輪，於10%~80%內改變龜裂滲透率，而刻劃0.635 mm厚之氧化鋁基板。以此種方式刻劃後，例如使用日本專利特開2010-149495所示之分斷裝置進行分斷。為了評估分斷後之端面粗糙度，而測量中心線平均粗糙度Ra及最大高度 Ry。圖2A、圖2B係表示其變化之曲線。又，圖3A、圖3B係表示使用刀尖角度為120°之刻劃輪時之中心線平均粗糙度Ra及最大高度Ry之變化之曲線。圖4A、圖4B係表示使用刀尖角度為130°之刻劃輪時之中心線平均粗糙度Ra及最大高度Ry之變化之曲線。圖5A~圖5D係表示刀尖角度為120°時之端面之狀態之圖，圖5A係龜裂滲透率為10%之情形，圖5B係龜裂滲透率為20%之情形，圖5C係龜裂滲透率為30%之情形，圖5D係龜裂滲透率為70%之情形。根據圖5C、圖5D，可知於龜裂滲透率為30%及70%之情形時會產生龜裂，品質變得不良。因此，於刀尖角度為120°之情形時，可選擇中心線平均粗糙度Ra及最大高度Ry充分低、且端面品質良好之範圍，即圖3A、圖3B所示之10~20%左右之龜裂滲透率。而且，同樣地，於刀尖角度100°之情形時，如圖2A、圖2B所示，可選擇龜裂滲透率10%左右之範圍。於刀尖角度為130°之情形時，如圖4A、圖4B所示，可選擇50%以下、10%以上之龜裂滲透率之範圍。 The inventors and the like used a scribe wheel with a blade tip angle of 100° to change the crack permeability in 10% to 80%, and scored a 0.635 mm thick alumina substrate. After the scribing in this manner, for example, the breaking device shown in Japanese Patent Laid-Open No. 2010-149495 is used for the breaking. In order to evaluate the end surface roughness after breaking, the center line average roughness Ra and the maximum height are measured. Ry. 2A and 2B are graphs showing changes thereof. 3A and 3B are graphs showing changes in the center line average roughness Ra and the maximum height Ry when the scribe wheel having a cutting edge angle of 120° is used. 4A and 4B are graphs showing changes in the center line average roughness Ra and the maximum height Ry when the marker wheel has a cutting edge angle of 130°. 5A to 5D are views showing the state of the end face when the blade edge angle is 120°, FIG. 5A is a case where the crack permeability is 10%, and FIG. 5B is a case where the crack permeability is 20%, and FIG. 5C is a case. The crack penetration rate is 30%, and Fig. 5D is a case where the crack permeability is 70%. 5C and 5D, it is understood that cracks are generated when the crack permeability is 30% and 70%, and the quality is deteriorated. Therefore, when the blade tip angle is 120°, the range in which the center line average roughness Ra and the maximum height Ry are sufficiently low and the end face quality is good, that is, about 10 to 20% as shown in FIGS. 3A and 3B can be selected. Crack penetration rate. Further, similarly, in the case where the cutting edge angle is 100°, as shown in FIGS. 2A and 2B, the range of the crack permeability of about 10% can be selected. When the cutting edge angle is 130°, as shown in FIGS. 4A and 4B, the range of the crack permeability of 50% or less and 10% or more can be selected.
其次，發明者等人使用刀尖角度為120°之刻劃輪，於10%~80%內改變龜裂滲透率，而刻劃氮化鋁基板。以此種方式刻劃後，例如使用日本專利特開2010-149495所示之分斷裝置，來進行分斷。為了評估分斷後之端面粗糙度，而測量中心線平均粗糙度Ra及最大高度Ry。圖6A、圖6B係表示其變化之曲線。如此，與先前之玻璃基板、LTCC基板不同，藉由減小龜裂滲透率，而使得斷開後之表面粗糙度變小，從而可提昇端面品質。 Next, the inventors and the like used a scribe wheel with a blade angle of 120° to change the crack permeability in 10% to 80%, and score the aluminum nitride substrate. After the scribing in this manner, for example, the breaking device shown in Japanese Patent Laid-Open No. 2010-149495 is used for the breaking. In order to evaluate the end surface roughness after the division, the center line average roughness Ra and the maximum height Ry were measured. 6A and 6B are graphs showing changes thereof. As described above, unlike the conventional glass substrate and LTCC substrate, the surface roughness after the breakage is reduced by reducing the crack permeability, and the end surface quality can be improved.
圖7A~圖7D係表示刀尖角度為120°時之端面狀態之圖，圖7A係龜裂滲透率為10%之情形，圖7B係龜裂滲透率為20%之情形，圖7C係龜裂滲透率為30%之情形，圖7D係龜裂滲透率為70%之情形。根據圖7D，可知龜裂滲透率為70%時，會產生龜裂，品質變得不良。因此，於刀尖角度為120°之情形時，可選擇中心線平均粗糙度Ra及最大高度 Ry充分低、且端面品質良好之範圍，即圖6A、圖6B所示之10~50%左右之龜裂滲透率。 7A to 7D are views showing the state of the end face when the blade edge angle is 120°, FIG. 7A is a case where the crack permeability is 10%, and FIG. 7B is a case where the crack permeability is 20%, and FIG. 7C is a turtle. The crack permeability is 30%, and Fig. 7D is a case where the crack permeability is 70%. According to FIG. 7D, it is understood that when the crack permeability is 70%, cracks are generated and the quality is deteriorated. Therefore, when the tool nose angle is 120°, the center line average roughness Ra and the maximum height can be selected. The range in which Ry is sufficiently low and the end surface quality is good, that is, the crack permeability of about 10 to 50% shown in Figs. 6A and 6B.
再者，如上所述，由於陶瓷基板之硬度高，因此刻劃輪容易產生磨損。為了解決此問題，較佳為於超硬合金之刻劃輪之表面、至少於刀尖部分形成金剛石膜(例如藉由CVD(Chemical Vapor Deposition，化學氣相沈積)形成之金剛石膜)，提昇刻劃輪之強度。若使用此種刻劃輪，則可防止急遽磨損，實現較長距離之刻劃。 Further, as described above, since the hardness of the ceramic substrate is high, the scoring wheel is likely to be worn. In order to solve this problem, it is preferable to form a diamond film on the surface of the scribing wheel of the super-hard alloy, at least at the tip end portion (for example, a diamond film formed by CVD (Chemical Vapor Deposition)). The strength of the rowing wheel. If such a scribing wheel is used, it is possible to prevent violent wear and achieve a long distance scribe.
本發明可廣泛利用於刻劃並分斷氧化鋁基板或氮化鋁基板等陶瓷基板之製造步驟中。 The present invention can be widely utilized in the manufacturing steps of scribing and dividing a ceramic substrate such as an alumina substrate or an aluminum nitride substrate.
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| JP2005053721A (en) * | 2003-07-31 | 2005-03-03 | Optrex Corp | PCB cutting tool |
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| JP5276547B2 (en) * | 2009-07-31 | 2013-08-28 | 三星ダイヤモンド工業株式会社 | Cutter wheel |
| TWI428301B (en) * | 2009-10-29 | 2014-03-01 | Mitsuboshi Diamond Ind Co Ltd | Scribing wheel and its manufacturing method |
| JP5075184B2 (en) * | 2009-10-29 | 2012-11-14 | 三星ダイヤモンド工業株式会社 | Scribing wheel |
| JP5161926B2 (en) * | 2010-07-05 | 2013-03-13 | 三星ダイヤモンド工業株式会社 | Cutting device |
| JP5373856B2 (en) | 2011-06-22 | 2013-12-18 | 三星ダイヤモンド工業株式会社 | Glass substrate scribing method |
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| CN1541193A (en) * | 2001-04-02 | 2004-10-27 | 三星钻石工业股份有限公司 | Cutter roller, scoring device using the same, scoring method, and method of breaking bonded substrates, and method and device for manufacturing the cutter roller |
| TW201141800A (en) * | 2004-02-02 | 2011-12-01 | Mitsuboshi Diamond Ind Co Ltd | Cutter wheel, scribing method and cutting method for fragile material substrate using the cutter wheel, and method of manufacturing cutter wheel |
| TW201206853A (en) * | 2004-02-02 | 2012-02-16 | Mitsuboshi Diamond Ind Co Ltd | Cutter wheel for scribing fragile material substrate and method of manufacturing the same |
| JP2009252971A (en) * | 2008-04-04 | 2009-10-29 | Dowa Metaltech Kk | Metal-ceramics bonding substrate, manufacturing method therefor, and metal-ceramics bonding body |
| TW201006775A (en) * | 2008-06-05 | 2010-02-16 | Mitsuboshi Diamond Ind Co Ltd | Line-drew wheel, line-drew method, line-drew method of ceramic substrate and cutting method of ceramic substrate |
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| CN103286861A (en) | 2013-09-11 |
| TW201345686A (en) | 2013-11-16 |
| KR20130098202A (en) | 2013-09-04 |
| CN103286861B (en) | 2016-12-28 |
| JP2013173302A (en) | 2013-09-05 |
| KR101686496B1 (en) | 2016-12-14 |
| JP5867159B2 (en) | 2016-02-24 |
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