TWI548315B - Circuit substrate, method for making the same, and circuit board and electronic device using the same. - Google Patents
Circuit substrate, method for making the same, and circuit board and electronic device using the same. Download PDFInfo
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- TWI548315B TWI548315B TW104125022A TW104125022A TWI548315B TW I548315 B TWI548315 B TW I548315B TW 104125022 A TW104125022 A TW 104125022A TW 104125022 A TW104125022 A TW 104125022A TW I548315 B TWI548315 B TW I548315B
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- substrate
- circuit board
- conductive
- unactivated
- metal element
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- 239000000758 substrate Substances 0.000 title claims description 91
- 238000000034 method Methods 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 75
- 239000002184 metal Substances 0.000 claims description 75
- 239000003054 catalyst Substances 0.000 claims description 58
- 230000003197 catalytic effect Effects 0.000 claims description 54
- 229910021645 metal ion Inorganic materials 0.000 claims description 33
- 230000004913 activation Effects 0.000 claims description 23
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 239000013039 cover film Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229920001721 polyimide Polymers 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 239000004642 Polyimide Substances 0.000 claims description 7
- 238000007772 electroless plating Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229920002873 Polyethylenimine Polymers 0.000 claims description 2
- 238000006555 catalytic reaction Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 2
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 229920000768 polyamine Polymers 0.000 description 3
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical group C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- UERLHASVVYLVKI-UHFFFAOYSA-N 1-propan-2-yl-9h-thioxanthene Chemical compound S1C2=CC=CC=C2CC2=C1C=CC=C2C(C)C UERLHASVVYLVKI-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CEEWTUQQODUGOP-UHFFFAOYSA-N C(C1=CC=CC=C1)=C1C(C(=O)OC)C=CC=C1 Chemical compound C(C1=CC=CC=C1)=C1C(C(=O)OC)C=CC=C1 CEEWTUQQODUGOP-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229910001429 cobalt ion Inorganic materials 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- MUJIDPITZJWBSW-UHFFFAOYSA-N palladium(2+) Chemical compound [Pd+2] MUJIDPITZJWBSW-UHFFFAOYSA-N 0.000 description 1
- FZUGPQWGEGAKET-UHFFFAOYSA-N parbenate Chemical compound CCOC(=O)C1=CC=C(N(C)C)C=C1 FZUGPQWGEGAKET-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 150000004060 quinone imines Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Manufacturing Of Printed Wiring (AREA)
Description
本發明涉及一種電路基板的製作方法,由該方法製得的電路基板,應用該電路基板的電路板,及應用該電路板的電子裝置。 The present invention relates to a method of fabricating a circuit board, a circuit board produced by the method, a circuit board to which the circuit board is applied, and an electronic device to which the circuit board is applied.
近年來,柔性電路板在電子產品上的應用越來越廣泛。柔性電路板的電路基板通常採用減法製程製作,即,在表面具有銅層的覆銅板上先覆蓋一干膜光阻層,再經過曝光顯影製程,將所需要的線路圖案先轉移至光阻層上,再以圖案化的光阻層為遮罩,對裸露的銅層進行濕式蝕刻,在銅層上製作所需的導電線路。然,傳統的減法製程通常存在側蝕現象,即,銅層遠離光阻層的底部蝕刻不完全或頂部蝕刻過量,使得由該方法製得的銅層上的導電線路的剖面輪廓通常呈上窄下寬的梯形結構,會使所製得的導電線路的線寬較大,這樣便需要將銅層的厚度降至特別小才可製得線寬較小的導電線路。另,習知的電路基板的導電線路與覆銅板基板之間的結合力不夠大。 In recent years, flexible circuit boards have become more and more widely used in electronic products. The circuit board of the flexible circuit board is usually fabricated by a subtractive process, that is, a copper film on the surface of the copper layer is covered with a dry film photoresist layer, and then subjected to an exposure and development process to transfer the required line pattern to the photoresist layer. Then, the patterned photoresist layer is used as a mask, and the exposed copper layer is wet-etched to form a desired conductive line on the copper layer. However, the conventional subtractive process usually has a side etching phenomenon, that is, the copper layer is incompletely etched away from the bottom of the photoresist layer or the top is excessively etched, so that the cross-sectional profile of the conductive line on the copper layer produced by the method is generally narrow. The wide trapezoidal structure will make the line width of the prepared conductive line larger, so that the thickness of the copper layer needs to be reduced to a particularly small size to obtain a conductive line with a small line width. In addition, the bonding force between the conductive circuit of the conventional circuit substrate and the copper clad laminate substrate is not large enough.
有鑑於此,有必要提供一種可提高導電線路與基板之間結合力的電路基板的製作方法。 In view of the above, it is necessary to provide a method of fabricating a circuit substrate capable of improving the bonding force between a conductive line and a substrate.
另,還有必要提供一種由上述電路基板的製作方法製得的電路基板。 Further, it is also necessary to provide a circuit board produced by the above-described method of manufacturing a circuit board.
另,還有必要提供一種應用所述電路基板的電路板。 In addition, it is also necessary to provide a circuit board to which the circuit substrate is applied.
另,還有必要提供一種應用所述電路板的電子裝置。 In addition, it is also necessary to provide an electronic device to which the circuit board is applied.
一種電路基板的製作方法,其包括如下步驟:提供一基板,該基板至少在其表面含有具有-COOH的聚醯亞胺;在所述基板的所述表面形成含有未活化觸媒金屬離子和光引發劑的未活化觸媒層,使靠近基板的未活化觸媒金屬離子與基板的所述表面的具有-COOH的聚醯亞胺發生化學反應而鍵合;對所述未活化觸媒層的部分區域曝光,使該區域的未活化觸媒金屬離子在光引發劑的作用下活化形成觸媒金屬單質,同時所述鍵合後的未活化觸媒金屬離子也在光引發劑的作用下活化形成觸媒金屬單質並嵌設於基板的所述表面,所述被曝光的區域即轉化為活化觸媒區,所述未曝光的區域即為未活化觸媒區;對形成有上述活化觸媒區的基板進行化學鍍導電金屬,使得導電金屬離子進入活化觸媒區中,並在觸媒金屬單質的催化下被還原成導電金屬單質,從而使活化觸媒區轉化為包括導電金屬單質以及分散於導電金屬單質顆粒之間的觸媒金屬單質的導電線路,以及在化學鍍導電金屬形成導電線路之前或在化學鍍導電金屬形成導電線路之後移除所述未活化觸媒區。 A method of fabricating a circuit substrate, comprising the steps of: providing a substrate comprising at least a surface of a polyimine having -COOH; forming an unactivated catalytic metal ion and photoinitiating on the surface of the substrate The unactivated catalyst layer of the agent, chemically reacts the unactivated catalytic metal ions near the substrate with the polyethylenimine having -COOH on the surface of the substrate; the portion of the unactivated catalyst layer The area is exposed, so that the unactivated catalytic metal ions in the region are activated by the photoinitiator to form a catalytic metal element, and the unactivated catalytic metal ions after the bonding are also activated by the photoinitiator. The catalytic metal element is embedded in the surface of the substrate, and the exposed region is converted into an activation catalyst region, and the unexposed region is an unactivated catalyst region; and the activation catalyst region is formed The substrate is electrolessly plated with a conductive metal such that the conductive metal ions enter the activation catalyst region and are reduced to a conductive metal element under the catalysis of the catalytic metal element, thereby causing the activation catalyst region to rotate. A conductive line comprising a conductive metal element and a catalytic metal element dispersed between the elemental particles of the conductive metal, and removing the unactivated layer before the electroless plating of the conductive metal to form the conductive line or after the electroless plating of the conductive metal to form the conductive line Catalyst zone.
一種電路基板,該電路基板包括基板及結合於該基板至少一表面的導電線路,該基板至少在其表面含有具有-COOH的聚醯亞胺,所述導電線路中含有導電金屬單質以及分散於導電金屬單質顆粒之間的觸媒金屬單質,所述導電線路中的部分觸媒金屬單質嵌設 於基板與該導電線路相接觸的表面。 A circuit substrate comprising a substrate and a conductive line bonded to at least one surface of the substrate, the substrate containing at least a surface of the substrate having a polyamine of -COOH, the conductive line containing a conductive metal element and dispersed in the conductive a catalytic metal element between metal elemental particles, a part of the catalytic metal in the conductive line is embedded a surface of the substrate in contact with the conductive trace.
一種電路板,該電路板包括上述電路基板。 A circuit board comprising the above circuit substrate.
一種電子裝置,其包括至少一電路板,該電路板包括上述電路基板。 An electronic device includes at least one circuit board including the above circuit substrate.
所述電路基板的製作方法,藉由在表面具有-COOH的聚醯亞胺的基板上形成未活化觸媒層,使靠近基板的未活化觸媒金屬離子與基板的所述表面的具有-COOH的聚醯亞胺發生化學反應而鍵合,使部分區域的未活化觸媒金屬離子活化形成觸媒金屬單質,同時所述鍵合後的未活化觸媒金屬離子也在光引發劑的作用下活化形成觸媒金屬單質並嵌設於基板的所述表面,再藉由化鍍使該活化觸媒區轉化成導電線路,從而製得包括觸媒金屬單質和導電金屬單質的導電線路,且該導電線路的部分觸媒金屬單質嵌設於基板與該導電線路相接觸的表面,使導電線路與基板的結合力較強。另,上述電路基板的製作方法不需使用通常的減法製程中的乾膜光阻層,從而有利於避免側蝕現象的產生,製程簡單,節約資源。 In the method of fabricating the circuit substrate, an unactivated catalyst layer is formed on a substrate having a polyamine of -COOH on the surface, so that the unactivated catalytic metal ions near the substrate and the surface of the substrate have -COOH The polyimine is chemically bonded to bond, and a part of the unactivated catalytic metal ion is activated to form a catalytic metal element, and the unactivated catalytic metal ion after the bonding is also under the action of a photoinitiator. Activating a catalytic metal element and embedding the surface of the substrate, and converting the activation catalyst region into a conductive line by chemical plating, thereby preparing a conductive line including a catalytic metal element and a conductive metal element, and A part of the catalytic metal element of the conductive line is embedded on the surface of the substrate in contact with the conductive line, so that the bonding force between the conductive line and the substrate is strong. In addition, the method for fabricating the above circuit substrate does not need to use the dry film photoresist layer in the usual subtractive process, thereby facilitating the occurrence of side etching, simple process, and resource saving.
10‧‧‧聚醯亞胺膜 10‧‧‧ Polyimine film
100‧‧‧電路基板 100‧‧‧ circuit board
10‧‧‧基板 10‧‧‧Substrate
11‧‧‧載板 11‧‧‧ Carrier Board
12‧‧‧覆蓋膜 12‧‧‧ Cover film
20‧‧‧導電線路 20‧‧‧Electrical circuit
30‧‧‧未活化觸媒層 30‧‧‧Unactivated catalyst layer
40‧‧‧過渡層 40‧‧‧Transition layer
41‧‧‧活化觸媒區 41‧‧‧Activation catalyst zone
42‧‧‧未活化觸媒區 42‧‧‧Unactivated catalyst zone
200‧‧‧光罩 200‧‧‧ mask
201‧‧‧通光孔 201‧‧‧Lighting hole
400‧‧‧電子裝置 400‧‧‧Electronic devices
401‧‧‧殼體 401‧‧‧shell
402‧‧‧螢幕 402‧‧‧ screen
圖1為基板的示意圖。 Figure 1 is a schematic view of a substrate.
圖2為在圖1所示的基板的表面結合未活化觸媒層的示意圖。 2 is a schematic view showing the bonding of an unactivated catalyst layer on the surface of the substrate shown in FIG. 1.
圖3為對圖2所示的未活化觸媒層進行曝光的示意圖。 3 is a schematic view showing exposure of the unactivated catalyst layer shown in FIG. 2.
圖4為圖3所示的未活化觸媒層曝光後形成的過渡層的示意圖。 4 is a schematic view of a transition layer formed after exposure of the unactivated catalyst layer shown in FIG.
圖5為去除圖4所示的過渡層的未活化觸媒區後的示意圖。 Fig. 5 is a schematic view showing the removal of the unactivated catalyst region of the transition layer shown in Fig. 4.
圖6為本發明一較佳實施例的電路基板。 Figure 6 is a circuit board in accordance with a preferred embodiment of the present invention.
圖7為本發明一較佳實施例的電子裝置的示意圖。 FIG. 7 is a schematic diagram of an electronic device according to a preferred embodiment of the present invention.
請參閱圖6,本發明提供一種電路基板100,其用於製作電路板(圖未示)。該電路基板100包括基板10及結合於該基板10至少一表面的圖案化的導電線路20。該導電線路20中含有導電金屬單質以及分散於導電金屬單質顆粒之間的對導電金屬離子還原具有催化活性的觸媒金屬單質。該導電線路20的部分觸媒金屬單質嵌設於基板10與該導電線路20相接觸的表面,從而有效提高了導電線路20與基板10的結合力。 Referring to FIG. 6, the present invention provides a circuit substrate 100 for fabricating a circuit board (not shown). The circuit substrate 100 includes a substrate 10 and a patterned conductive line 20 bonded to at least one surface of the substrate 10. The conductive line 20 contains a simple substance of a conductive metal and a catalytic metal element which is dispersed between the elemental particles of the conductive metal and has catalytic activity for reducing the conductive metal ion. A part of the catalytic metal element of the conductive line 20 is embedded on the surface of the substrate 10 that is in contact with the conductive line 20, thereby effectively improving the bonding force between the conductive line 20 and the substrate 10.
所述導電金屬單質為銅金屬單質、鎳金屬單質、及銀金屬單質等常規應用於電路板的導電金屬單質,優選為銅金屬單質。 The conductive metal element is a single element of a conductive metal such as a simple substance of copper metal, a simple substance of nickel metal, and a simple substance of silver metal, which is conventionally applied to a circuit board, and is preferably a simple substance of copper metal.
所述觸媒金屬單質為鈀金屬單質、金金屬單質、鎳金屬單質、鈷金屬單質等常規使用的觸媒金屬單質,優選為鈀金屬單質。 The catalyst metal element is a conventional catalytic metal element such as a palladium metal element, a gold metal element, a nickel metal element, or a cobalt metal element, and is preferably a palladium metal element.
在本實施方式中,所述基板10包括載板11及結合於該載板11至少一表面的覆蓋膜12,每一導電線路20結合於該覆蓋膜12遠離載板11的表面。 In the embodiment, the substrate 10 includes a carrier 11 and a cover film 12 bonded to at least one surface of the carrier 11 . Each conductive line 20 is bonded to a surface of the cover film 12 away from the carrier 11 .
該載板11的材質可選自聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯、聚醚醚酮、聚碸、聚醚碸、聚碳酸酯、聚醯胺、聚醯亞胺、丙烯酸樹脂、三乙烯基纖維素等常規應用於電路基板的絕緣樹脂中的一種。 The material of the carrier 11 may be selected from the group consisting of polyethylene terephthalate (PET), polyethylene naphthalate, polyether ether ketone, polyfluorene, polyether oxime, polycarbonate, polyamine, poly One of insulating resins conventionally used for circuit boards, such as quinone imine, acrylic resin, and trivinyl cellulose.
該覆蓋膜12為聚醯亞胺膜(PI膜),該聚醯亞胺膜中包含具有-COOH(羧基)的聚醯亞胺(以下簡稱PI-COOH)。該PI-COOH的
結構式為:
其中X1和X3為具有四個共價鍵的有機官能基,X1和X3可相同或不相同;X2和X4為具有雙共價鍵的有機官能基,X2和X4可相同或不相同;m和n為重複單元的數目,其中,m、n分別為10至1000的整數。 Wherein X 1 and X 3 are organofunctional groups having four covalent bonds, X 1 and X 3 may be the same or different; X 2 and X 4 are organofunctional groups having a double covalent bond, X 2 and X 4 They may be the same or different; m and n are the number of repeating units, wherein m and n are each an integer of 10 to 1000.
X1和X3分別選自以下官能基之一:
X2與X4相同的時候,X2和X4分別選自以下官能基之一:
當X4與X2不相同的時候,X4選自以下官能基中的一種:
在另一實施方式中,所述基板10直接為一聚醯亞胺基板而不包括所述載板11,該聚醯亞胺基板中包含所述PI-COOH。 In another embodiment, the substrate 10 is directly a polyimide substrate without including the carrier 11, and the PI-COOH is contained in the polyimide substrate.
請結合參閱圖1~6,一種上述電路基板100的製作方法,其包括如下步驟: Referring to FIG. 1 to FIG. 6 , a manufacturing method of the above circuit substrate 100 includes the following steps:
步驟S1:請參閱圖1,提供一基板10,該基板10的至少一表面含有PI-COOH。 Step S1: Referring to FIG. 1, a substrate 10 is provided. At least one surface of the substrate 10 contains PI-COOH.
在本實施方式中,該基板10包括載板11及結合於該載板11至少一表面的覆蓋膜12,該覆蓋膜12為聚醯亞胺膜,該聚醯亞胺膜包含PI-COOH。在另一實施方式中,該基板10為聚醯亞胺基板,該聚醯亞胺基板中包含PI-COOH。 In the present embodiment, the substrate 10 includes a carrier 11 and a cover film 12 bonded to at least one surface of the carrier 11. The cover film 12 is a polyimide film comprising PI-COOH. In another embodiment, the substrate 10 is a polyimide substrate comprising PI-COOH.
步驟S2:請參閱圖2,在所述基板10的一表面形成一未活化觸媒層30。該未活化觸媒層30中含有未活化觸媒金屬離子(Mn+)及光引發劑。 Step S2: Referring to FIG. 2, an unactivated catalyst layer 30 is formed on one surface of the substrate 10. The unactivated catalyst layer 30 contains unactivated catalytic metal ions (Mn + ) and a photoinitiator.
具體的,將所述基板10浸入含有未活化觸媒金屬離子Mn+和光引發劑的觸媒溶液中,然後取出,從而使該基板10的表面形成所述未活化觸媒層30。 Specifically, the substrate 10 is immersed in a catalyst solution containing an unactivated catalytic metal ion Mn + and a photoinitiator, and then taken out, so that the surface of the substrate 10 forms the unactivated catalyst layer 30.
所述未活化觸媒金屬離子Mn+為過渡金屬離子,該過渡金屬離子選自金離子、鈀離子、鈷離子、及鎳離子中的一種或幾種,其中n為大於0的整數。所述光引發劑選自1-羥基環己基苯基甲酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基-1-丙酮、2、4、6-三甲基苯甲醯基-二苯基氧化膦、安息香雙甲醚、2-羥基-2-甲基-1-苯基-1-丙酮、1-羥基-環己基-苯基甲酮、甲苯醯基衍生物、二 苯甲酮、4-苯甲醯基-4’-甲基-二苯硫醚、2-苯甲醯基苯甲酸甲酯、異丙基硫雜蔥酮(2、4異構體混合物)、4-(N、N-二甲氨基)苯甲酸乙酯、4-(N、N-二甲氨基)苯甲酸異辛酯、三級胺丙烯酸酯、胺改性環氧丙烯酸酯中的一種或幾種。該光引發劑用於在曝光時引發所述未活化觸媒金屬離子Mn+活化形成觸媒金屬單質M。 The unactivated catalytic metal ion Mn + is a transition metal ion selected from one or more of a gold ion, a palladium ion, a cobalt ion, and a nickel ion, wherein n is an integer greater than zero. The photoinitiator is selected from the group consisting of 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinyl-1-propanone, 2, 4, 6-trimethylbenzimidyl-diphenylphosphine oxide, benzoin dimethyl ether, 2-hydroxy-2-methyl-1-phenyl-1-propanone, 1-hydroxy-cyclohexyl-phenyl ketone , tolyl mercapto derivative, benzophenone, 4-benzylidene-4'-methyl-diphenyl sulfide, methyl 2-benzylidenebenzoate, isopropyl thioxanthene (2 , 4 isomer mixture), 4-(N,N-dimethylamino)benzoic acid ethyl ester, 4-(N,N-dimethylamino)benzoic acid isooctyl ester, tertiary amine acrylate, amine modification One or more of epoxy acrylates. The photoinitiator is used to initiate activation of the unactivated catalytic metal ion Mn + upon exposure to form a catalytic metal element M.
其中,在基板10與所述觸媒溶液接觸的時候,該基板10表面的PI-COOH會與未活化觸媒金屬離子Mn+發生化學反應生成[PI-COO]nM,使靠近基板10的未活化觸媒金屬離子Mn+與基板10藉由化學鍵結合,從而使未活化觸媒層30與基板10之間有較強的結合力。 Wherein, when the substrate 10 is in contact with the catalyst solution, the PI-COOH on the surface of the substrate 10 chemically reacts with the unactivated catalytic metal ion Mn + to form [PI-COO] n M so as to be close to the substrate 10. The unactivated catalytic metal ion Mn + is bonded to the substrate 10 by a chemical bond, thereby providing a strong bonding force between the unactivated catalyst layer 30 and the substrate 10.
步驟S3:請參閱圖3和圖4,對所述未活化觸媒層30的對應需設置導電線路20的區域進行曝光,使該區域的未活化觸媒金屬離子Mn+在光引發劑的作用下活化形成活化的觸媒金屬單質M,從而使該區域形成為活化觸媒區41。未曝光的區域為未活化觸媒區42,即得到一包括活化觸媒區41和未活化觸媒區42的過渡層40。 Step S3: Referring to FIG. 3 and FIG. 4, the area of the unactivated catalyst layer 30 corresponding to the conductive line 20 is exposed, so that the unactivated catalytic metal ion Mn + of the region acts as a photoinitiator. The lower activation forms an activated catalytic metal element M, thereby forming the region into the activation catalyst region 41. The unexposed area is the unactivated catalyst zone 42, i.e., a transition layer 40 comprising an activation catalyst zone 41 and an unactivated catalyst zone 42 is obtained.
具體的,在所述基板10的具有未活化觸媒層30的一側罩設一具有通光孔201的圖案化的光罩200,該通光孔201對應未活化觸媒層30的需設置導電線路20的區域。該光罩200除了通光孔201以外的區域不會使光線藉由。接著對未活化觸媒層30曝光,使光源(圖未示)發射的光線藉由光罩200的通光孔201照射到未活化觸媒金屬離子,使該區域的未活化觸媒金屬離子Mn+在光引發劑的作用下活化形成觸媒金屬單質M,從而得到所述包括活化觸媒區41和未活化觸媒區42的過渡層40。其中,該活化觸媒區41中含有觸媒金 屬單質。所述光源發射的光線可以為紫外光、紅外光等可以使未活化觸媒金屬離子Mn+活化的光。 Specifically, a patterned photomask 200 having a light-passing aperture 201 is disposed on a side of the substrate 10 having the unactivated catalyst layer 30, and the light-passing aperture 201 corresponds to an unactivated catalyst layer 30. The area of the conductive line 20. The area of the reticle 200 other than the light passing hole 201 does not allow light to pass. Then, the unactivated catalyst layer 30 is exposed, and the light emitted by the light source (not shown) is irradiated to the unactivated catalytic metal ions through the light-passing holes 201 of the mask 200 to make the unactivated catalytic metal ions in the region M. The n+ is activated by the photoinitiator to form a catalytic metal element M, thereby obtaining the transition layer 40 including the activation catalyst region 41 and the unactivated catalyst region 42. The activation catalyst region 41 contains a catalytic metal element. The light emitted by the light source may be ultraviolet light, infrared light or the like that can activate the unactivated catalytic metal ion Mn + .
在曝光過程中,在未活化觸媒層30中的未活化觸媒金屬離子Mn+被還原成觸媒金屬單質M的同時,未活化觸媒層30與基板10的結合介面的與PI-COO-結合的未活化觸媒金屬離子Mn+也被還原成觸媒金屬單質M並嵌設於基板10與該過渡層40相接觸的表面。 During the exposure process, the unactivated catalytic metal ion Mn + in the unactivated catalyst layer 30 is reduced to the catalytic metal element M, while the interface between the unactivated catalyst layer 30 and the substrate 10 is combined with PI-COO. The bound unactivated catalytic metal ion Mn + is also reduced to the catalytic metal element M and embedded on the surface of the substrate 10 in contact with the transition layer 40.
步驟S4:請參閱圖5,移除所述未活化觸媒區42。 Step S4: Referring to FIG. 5, the unactivated catalyst region 42 is removed.
具體的,可藉由常規使用的鹼液去除未活化觸媒層的方法清洗未活化觸媒區42,再用水沖洗乾淨,從而將未活化觸媒區42移除。其中,該鹼液可以為常規使用的氫氧化鈉溶液、氫氧化鉀溶液等鹼性溶液。 Specifically, the unactivated catalyst region 42 can be cleaned by a conventionally used lye to remove the unactivated catalyst layer, and then rinsed with water to remove the unactivated catalyst region 42. The lye may be an alkaline solution such as a sodium hydroxide solution or a potassium hydroxide solution which is conventionally used.
步驟S5:請參閱圖6,對形成有上述活化觸媒區41的基板進行化學鍍導電金屬,以使活化觸媒區41轉化成導電線路20。 Step S5: Referring to FIG. 6, the substrate on which the activation catalyst region 41 is formed is electrolessly plated with a conductive metal to convert the activation catalyst region 41 into the conductive line 20.
具體的,在上述活化觸媒區41上塗覆或浸入含有導電金屬離子的溶液,使得導電金屬離子進入活化觸媒區41中,並在活化觸媒區41中的觸媒金屬單質M的催化下被還原成導電金屬單質,從而形成包括導電金屬單質以及分散於導電金屬單質顆粒之間的觸媒金屬單質的導電線路20。 Specifically, a solution containing conductive metal ions is coated or immersed in the above-mentioned activation catalyst region 41 such that the conductive metal ions enter the activation catalyst region 41 and are catalyzed by the catalytic metal element M in the activation catalyst region 41. It is reduced to a simple substance of a conductive metal, thereby forming a conductive line 20 including a simple substance of a conductive metal and a simple substance of a catalytic metal dispersed between the elemental particles of the conductive metal.
可以理解,所述步驟S4和步驟S5的順序還可以調換,即先對形成有上述活化觸媒區41的基板進行化學鍍導電金屬,以使活化觸媒區41轉化成導電線路20,然後移除所述未活化觸媒區42。且優選為,化學鍍形成導電線路20後再去除未活化觸媒區41。 It can be understood that the sequence of the step S4 and the step S5 can also be reversed, that is, the substrate on which the activation catalyst region 41 is formed is first electrolessly plated with a conductive metal to convert the activation catalyst region 41 into the conductive line 20, and then moved. Except for the unactivated catalyst zone 42. It is preferable to remove the unactivated catalyst region 41 after electroless plating to form the conductive line 20.
上述含有導電金屬離子的溶液可以為硫酸銅溶液、硝酸銅溶液、 氯化銅溶液、硫酸鎳溶液、硝酸鎳溶液、氯化鎳溶液、硝酸銀溶液等化學鍍中常規使用的具有導電金屬離子的化學鍍導電金屬溶液。 The above solution containing conductive metal ions may be a copper sulfate solution or a copper nitrate solution. An electroless plating conductive metal solution having a conductive metal ion which is conventionally used in electroless plating such as a copper chloride solution, a nickel sulfate solution, a nickel nitrate solution, a nickel chloride solution, or a silver nitrate solution.
請參閱圖7,一種電子裝置400,該電子裝置400可以為手機、電腦、電子閱讀器、智慧手錶等。所述電子裝置400包括殼體401及安裝於殼體401的螢幕402,該殼體401與螢幕402配合形成有容置空間(圖未示),所述電子裝置400還包括容置於該容置空間的電路板(圖未示),該電路板包括上述電路基板100。 Referring to FIG. 7, an electronic device 400 can be a mobile phone, a computer, an e-reader, a smart watch, or the like. The electronic device 400 includes a housing 401 and a screen 402 mounted on the housing 401. The housing 401 cooperates with the screen 402 to form an accommodating space (not shown). The electronic device 400 further includes a housing. A space board (not shown) is provided, which includes the above-described circuit substrate 100.
上述電路基板100的製作方法藉由基板10表面的PI-COOH與未活化觸媒金屬離子Mn+發生化學反應得到[PI-COO]nM,[PI-COO]nM中與PI-COO-鍵合的未活化觸媒金屬離子Mn+再感光還原成單質M並嵌設於基板10的表面,從而使形成的導電線路20與基板10具有較好的結合力。該電路基板100的製作方法不需使用通常的減法製程中的乾膜光阻層,從而有利於避免側蝕現象的產生,製程簡單,節約資源。 The circuit board 100 is fabricated by chemically reacting PI-COOH on the surface of the substrate 10 with the unactivated catalytic metal ion Mn + to obtain [PI-COO] n M, [PI-COO] n M and PI-COO- The bonded unactivated catalytic metal ions Mn + are photoreduced to a simple substance M and embedded on the surface of the substrate 10, so that the formed conductive lines 20 have a good bonding force with the substrate 10. The manufacturing method of the circuit substrate 100 does not need to use the dry film photoresist layer in the usual subtractive process, thereby facilitating the generation of the side etching phenomenon, the process is simple, and resources are saved.
100‧‧‧電路基板 100‧‧‧ circuit board
10‧‧‧基板 10‧‧‧Substrate
11‧‧‧載板 11‧‧‧ Carrier Board
12‧‧‧覆蓋膜 12‧‧‧ Cover film
20‧‧‧導電線路 20‧‧‧Electrical circuit
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI663901B (en) * | 2017-07-05 | 2019-06-21 | HongQiSheng Precision Electronics (QinHuangDao) Co.,Ltd. | Flexible printed circuit board and method for manufacturing the same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100505179C (en) * | 2006-01-12 | 2009-06-24 | 台湾薄膜电晶体液晶显示器产业协会 | Method for directly patterning metal layer of semiconductor element |
| TW201029536A (en) * | 2009-01-16 | 2010-08-01 | Hon Hai Prec Ind Co Ltd | Ink and method for making conductive line |
| US20120097439A1 (en) * | 2009-04-30 | 2012-04-26 | Pi R&D Co., Ltd. | Modified polyimide and method for producing modified polyimide |
| TWI378603B (en) * | 2005-07-19 | 2012-12-01 | Sumitomo Electric Industries | Complex porous resin substrate and a method of fabricating the same |
| TWI403835B (en) * | 2006-08-29 | 2013-08-01 | Jsr股份有限公司 | Photosensitive insulating resin composition and cured product thereof, and circuit board having the same |
| CN103319714A (en) * | 2013-02-08 | 2013-09-25 | 长兴化学工业股份有限公司 | Polyimide and coating composition formed therefrom |
| CN102534576B (en) * | 2010-12-14 | 2015-03-04 | 罗门哈斯电子材料有限公司 | Plating catalyst and method |
-
2015
- 2015-07-31 TW TW104125022A patent/TWI548315B/en active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI378603B (en) * | 2005-07-19 | 2012-12-01 | Sumitomo Electric Industries | Complex porous resin substrate and a method of fabricating the same |
| CN100505179C (en) * | 2006-01-12 | 2009-06-24 | 台湾薄膜电晶体液晶显示器产业协会 | Method for directly patterning metal layer of semiconductor element |
| TWI403835B (en) * | 2006-08-29 | 2013-08-01 | Jsr股份有限公司 | Photosensitive insulating resin composition and cured product thereof, and circuit board having the same |
| TW201029536A (en) * | 2009-01-16 | 2010-08-01 | Hon Hai Prec Ind Co Ltd | Ink and method for making conductive line |
| US20120097439A1 (en) * | 2009-04-30 | 2012-04-26 | Pi R&D Co., Ltd. | Modified polyimide and method for producing modified polyimide |
| CN102534576B (en) * | 2010-12-14 | 2015-03-04 | 罗门哈斯电子材料有限公司 | Plating catalyst and method |
| CN103319714A (en) * | 2013-02-08 | 2013-09-25 | 长兴化学工业股份有限公司 | Polyimide and coating composition formed therefrom |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI663901B (en) * | 2017-07-05 | 2019-06-21 | HongQiSheng Precision Electronics (QinHuangDao) Co.,Ltd. | Flexible printed circuit board and method for manufacturing the same |
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