TWI439530B - Thermosetting wafer bonding film, dicing wafer bonding film, and method of manufacturing semiconductor device - Google Patents

Description

Thermoset wafer bonding film, dicing wafer bonding film, and semiconductor package Manufacturing method

The present invention relates to a thermosetting type die bonding film used when a semiconductor element such as a semiconductor chip is subsequently fixed to an adherend such as a substrate or a lead frame. Further, the present invention relates to a dicing ̇bonding film in which a thermosetting wafer bonding film and a dicing film are laminated. Further, the present invention relates to a method of manufacturing a semiconductor device using the above-described dicing wafer bonding film.

Conventionally, in the manufacturing process of a semiconductor device, silver paste is used when a lead frame and an electrode member are fixed to a semiconductor wafer. The fixing treatment is performed by applying a gel-like adhesive to a die pad or the like of a lead frame, mounting a semiconductor wafer thereon, and curing the gel-like adhesive layer.

However, the gelled adhesive has a large unevenness in coating amount, coating shape, and the like due to its viscosity behavior, deterioration, and the like. As a result, the thickness of the formed gel-like adhesive becomes uneven, resulting in a lack of reliability in the fixing strength of the semiconductor wafer. That is, when the coating amount of the gel-like adhesive is insufficient, the fixing strength between the semiconductor wafer and the electrode member is lowered, causing peeling of the semiconductor wafer in the subsequent wire bonding step. On the other hand, when the coating amount of the gel-like adhesive is too large, the gel-like adhesive is cast onto the semiconductor wafer to cause defective characteristics, and the yield and reliability are lowered. The problem in such a fixing process is particularly remarkable as the size of the semiconductor wafer is increased. Therefore, it is necessary to frequently control the amount of coating of the gelled adhesive, and to give workability or Productivity brings problems.

In the coating step of the above-mentioned gel-like adhesive, there is a method of additionally applying a gel-like adhesive to a lead frame or a formed wafer. However, in the above method, the gel-like adhesive layer is difficult to homogenize, and the application of the gel-like adhesive requires special equipment and a long time. Therefore, a dicing wafer bonding film which subsequently holds a semiconductor wafer in the dicing step and also imparts an adhesive layer for wafer fixing required in the mounting step has been proposed (for example, refer to Patent Document 1).

The dicing wafer bonding film is disposed on the supporting substrate in a peelable adhesive layer. After the semiconductor wafer is cut under the holding of the adhesive layer, the supporting substrate is stretched to bond the semiconductor wafer together with the adhesive. The layers are peeled off together, and they are individually recovered and fixed to the adherend such as a lead frame by the adhesive layer.

In addition, from the viewpoint of the thermal conductivity, the adjustment of the melt viscosity, and the thixotropic, the following Patent Document 2 discloses a dicing wafer bonding film in which an inorganic filler or the like is added to the adhesive layer.

However, the dicing wafer bonding film described in the above Patent Document 2 has the following problems. In other words, the semiconductor device represented by the memory has become a mainstream semiconductor package in which a thinned semiconductor wafer is stacked in a plurality of stages as the capacity is increased. In addition, since the thickness of the semiconductor package itself is also limited, the thinning of the wafer bonding film is also performed. Based on the above background, the mechanical strength of semiconductor wafers or individualized semiconductor wafers is very low and fragile. Therefore, when the semiconductor wafer is die-bonded to the adherend through the wafer bonding film, there is a problem that the semiconductor wafer is broken. question.

The reason why the semiconductor wafer is damaged is that the filling of a filler such as an inorganic filler contained in the wafer bonding film is not appropriate. That is, the filling material in the wafer bonding film is of an inappropriate size, and the content thereof is also unsuitable, and the stress is locally concentrated on the semiconductor wafer by the filling material by the wafer bonding pressure applied at the time of wafer bonding, resulting in a result of causing the stress to locally concentrate on the semiconductor wafer. Breakage of the semiconductor wafer.

Advanced technical literature

Patent literature

Patent Document 1: Japanese Patent Laid-Open No. 60-57642

Patent Document 2: Japanese Patent Laid-Open Publication No. 2008-88411

The present invention has been made in view of the above problems, and an object thereof is to prevent local stress from being applied to a semiconductor wafer by a filling material when a semiconductor wafer wafer is bonded to an adherend by a thermosetting wafer bonding film, thereby providing a semiconductor reduction A damaged thermosetting wafer bonding film of a wafer and a dicing wafer bonding film having the above-described thermosetting wafer bonding film. Further, the present invention also provides a method of manufacturing a semiconductor device using the above-described dicing wafer bonding film.

In order to solve the above-mentioned conventional problems, the inventors of the present invention have studied a thermosetting wafer bonding film, a dicing wafer bonding film having the above-described thermosetting wafer bonding film, and a method of manufacturing a semiconductor device. As a result, it has been found that the above object can be attained by adopting the following constitution, and the present invention has been completed.

That is, the thermosetting wafer bonding film according to the present invention is a thermosetting wafer bonding film containing an adhesive composition and a filler containing fine particles, which is a thermosetting wafer bonding film. The thickness of the thermosetting wafer bonding film is Y (μm), and the ratio X/Y when the maximum particle diameter of the filler is X (μm) is 1 or less.

According to the above configuration, the semiconductor wafer wafer is bonded by the wafer bonding film by setting the relationship between the thickness Y (μm) of the thermosetting wafer bonding film and the maximum particle diameter X (μm) of the filling material to X/Y ≦1. When applied to the adherend, the stress concentration on the semiconductor wafer is reduced by the filler material. As a result, even if the semiconductor wafer is made thinner, the semiconductor wafer can be reduced in damage, and the semiconductor device can be manufactured, and the throughput can be improved.

In the above configuration, the X (μm) is preferably in the range of 0.05 μm to 5 μm.

Further, in the above configuration, the Y (μm) is preferably in the range of 1 μm to 5 μm.

Furthermore, in the above configuration, the content of the filler is preferably in the range of 1 part by weight to 80 parts by weight based on 100 parts by weight of the adhesive composition.

Further, in the above configuration, the content of the filler is preferably in the range of 1 part by volume to 40 parts by volume with respect to 100 parts by volume of the adhesive composition.

Further, in the above configuration, the maximum profile height Rt of the roughness curve in the thermosetting wafer bonding film is preferably in the range of 0.1 μm to 2.3 μm.

In order to solve the above problems, the dicing wafer bonding film of the present invention has the above-described thermosetting bonding film laminated on the dicing film.

In order to solve the above problems, the manufacture of the semiconductor device according to the present invention A method of manufacturing a semiconductor device using the dicing wafer bonding film described above, comprising the step of bonding the thermosetting wafer bonding film as a bonding surface and bonding the back surface of the semiconductor wafer Cutting the wafer bonding film; cutting the semiconductor wafer together with the thermosetting wafer bonding film to form a semiconductor wafer; and picking up the semiconductor wafer from the dicing wafer bonding film together with the thermosetting wafer bonding film And the wafer bonding step is performed by the thermosetting wafer bonding film under the conditions of a temperature of 100 ° C to 180 ° C, a bonding pressure of 0.05 MPa to 0.5 MPa, and a bonding time of 0.1 sec to 5 sec. The semiconductor wafer is bonded to the adherend.

In the above method, when the semiconductor wafer wafer is bonded to the adherend, a thermosetting wafer bonding film in which stress is concentrated on the semiconductor wafer by using a filler which is formulated in the film is used. Therefore, even if the wafer bonding of the semiconductor wafer is performed under the above-described wafer bonding conditions, the damage of the semiconductor wafer can be reduced. In other words, according to the above method, it is possible to reduce the breakage of the semiconductor wafer and to increase the throughput to manufacture a semiconductor device.

The present invention achieves the effects described below by the means described above.

That is, the thermosetting wafer bonding film of the present invention has a relationship between the thickness Y (μm) of the thermosetting wafer bonding film and the maximum particle diameter X (μm) of the filling material is X/Y ≦1. Thereby, when the semiconductor wafer is bonded to the adherend by the thermosetting wafer bonding film, the filling material contained in the film can reduce the local stress applied to the semiconductor wafer. As a result, it is possible to reduce the breakage of the semiconductor wafer and increase the yield, thereby achieving the effect of manufacturing a semiconductor device.

(cut wafer bonding film)

In the thermosetting wafer bonding film of the present invention (hereinafter referred to as "wafer bonding film"), a dicing wafer bonding film obtained by laminating a dicing film layer as an example will be described as an example. Fig. 1 is a schematic cross-sectional view showing a dicing wafer bonding film of this embodiment. Fig. 2 is a schematic cross-sectional view showing another dicing wafer bonding film of this embodiment.

As shown in FIG. 1, the dicing wafer bonding film 10 has a structure in which a wafer bonding film 3 is laminated on a dicing film. The dicing film is formed by laminating an adhesive layer 2 on the substrate 1, and the wafer bonding film 3 is provided on the adhesive layer 2. Further, as shown in Fig. 2, the present invention may be configured such that the wafer bonding film 3' is formed only on the workpiece bonding portion.

The substrate 1 has ultraviolet light transmittance and is a strength precursor for dicing the wafer bonding films 10 and 11. For example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene Polyolefin such as polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating Copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate, polyester, polycarbonate, polyimine , polyetheretherketone, polyimide, polyether oximine, polyamine, wholly aromatic polyamine, polyphenylene sulfide, aromatic polyamide (paper), glass, glass cloth, fluorine resin , polyvinyl chloride, polyvinylidene chloride, cellulose resin, polyoxyl Alkane resin, metal (foil), paper, and the like.

Moreover, as a material of the base material 1, a polymer such as a crosslinked body of the above resin may be mentioned. The plastic film may be used without stretching, or may be used after uniaxial or biaxial stretching treatment as needed. According to the resin sheet which is heat-shrinkable by the stretching treatment or the like, by heat-shrinking the substrate 1 after dicing, the adhesion area of the adhesive layer 2 and the wafer bonding films 3 and 3' can be reduced. It is easy to recycle semiconductor wafers.

In order to improve the adhesion to the adjacent layer, the retention property, and the like, the surface of the substrate 1 may be subjected to a conventional surface treatment such as chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, or the like. The coating treatment of a primer (for example, an adhesive substance to be described later) is treated and used.

The substrate 1 may be appropriately selected from the same or different types of materials, and a material obtained by blending a plurality of materials may be used as needed. Further, in the substrate 1, in order to impart antistatic properties to the substrate 1, a vapor deposition layer containing a conductive material having a thickness of about 30 Å to about 500 Å, such as a metal, an alloy, or an oxide, may be provided on the substrate 1. The substrate 1 may be a single layer or a multilayer of two or more.

The thickness of the substrate 1 is not particularly limited and can be appropriately determined, and is generally from about 5 μm to about 200 μm .

The pressure-sensitive adhesive layer 2 is composed of an ultraviolet curable adhesive. The ultraviolet curable adhesive can easily reduce the adhesion by increasing the degree of crosslinking by irradiation of ultraviolet rays, and irradiates ultraviolet rays only to the portion 2a of the adhesive layer 2 corresponding to the semiconductor wafer adhered portion shown in FIG. The difference in adhesion to the other portion 2b can be prepared.

Further, as shown in Fig. 2, the ultraviolet-curable adhesive layer 2 combined with the wafer bonding film 3' is cured, whereby the portion 2a in which the adhesion is remarkably lowered can be easily formed. Since the wafer bonding film 3' is adhered to the above-mentioned portion 2a which is cured and has a lowered adhesive force, the interface between the above-mentioned portion 2a of the adhesive layer 2 and the wafer bonding film 3' has a property of being easily peeled off at the time of picking up. On the other hand, the portion not irradiated with ultraviolet rays has a sufficient adhesive force to form the above portion 2b.

As described above, in the adhesive layer 2 of the dicing wafer bonding film 10 shown in Fig. 1, the portion 2b formed of the uncured ultraviolet curable adhesive adheres to the wafer bonding film 3, and the holding force at the time of cutting can be ensured. . The ultraviolet curable adhesive as described above can support the wafer bonding film 3 for adhering the semiconductor wafer to the adherend such as a substrate with a good adhesion-peel balance. In the adhesive layer 2 of the dicing wafer bonding film 11 shown in FIG. 2, the above portion 2b can fix a wafer ring.

The ultraviolet curable adhesive can be a material which exhibits an adhesive property by having an ultraviolet curable functional group such as a carbon-carbon double bond, without particular limitation. The ultraviolet-curable adhesive agent may, for example, be a UV-curable monomer component or an oligomer component added to a general pressure sensitivity adhesive such as an acrylic adhesive or a rubber adhesive. Curing adhesive.

As the pressure-sensitive adhesive, it is preferable to use an acrylic polymer as a base polymerization from the viewpoint of cleaning and washing property of an organic solvent such as ultrapure water or alcohol from the viewpoint of avoiding contamination of an electronic component such as a semiconductor wafer or glass. Acrylic adhesive for the substance.

As the above acrylic polymer, for example, an alkyl (meth)acrylate (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, and second butyl ester (s-) may be used. Butyl ester), t-butyl ester, amyl ester, isoamyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, decyl ester, decyl ester, isoindole An alkyl group such as an ester, undecyl ester, dodecyl ester, tridecyl ester, myristyl ester, cetyl ester, stearyl ester or eicosyl ester having 1 to 30 carbon atoms, particularly carbon Acrylic acid having one or two or more kinds of cycloalkyl (meth) acrylate (for example, cyclopentyl ester, cyclohexyl ester, etc.) as a monomer component, such as a linear or branched alkyl ester having 4 to 18 atoms; Polymers, etc. Further, (meth) acrylate means acrylate and/or methacrylate, and all of (meth) of the present invention have the same meaning.

The acrylic polymer may contain a unit corresponding to another monomer component copolymerizable with the alkyl (meth)acrylate or the cycloalkyl ester, as needed, in order to improve cohesive strength, heat resistance and the like. Examples of the monomer component as described above include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and croton. a carboxyl group-containing monomer such as an acid; an acid anhydride monomer such as maleic anhydride or itaconic anhydride; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, or (meth)acrylic acid-4 -hydroxybutyl ester, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxyl (meth)acrylate a hydroxyl group-containing monomer such as lauryl ester or (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(methyl)acrylamido-2-methylpropane Sulfonic acid, (meth) acrylamide, propanesulfonic acid, sulfopropyl (meth) acrylate, (a) a sulfonic acid group-containing monomer such as acryloxynaphthalenesulfonic acid; a phosphoric acid group-containing monomer such as acryloylphosphonium-2-hydroxyethyl ester; acrylamide or acrylonitrile. These copolymerizable monomer components may be used alone or in combination of two or more. The amount of these copolymerizable monomers used is preferably 40% by weight or less based on the total of the monomer components.

In addition, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, in order to carry out crosslinking. Examples of the polyfunctional monomer as described above include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, and (poly)propylene glycol di(meth)acrylate. , neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) acrylate, and the like. These polyfunctional monomers may also be used alone or in combination of two or more. The amount of use of the polyfunctional monomer is preferably 30% by weight or less based on the total adhesion of the monomer component from the viewpoint of adhesion characteristics and the like.

The above acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, or suspension polymerization. From the viewpoint of preventing contamination of a clean adherend, etc., it is preferred that the content of the low molecular weight substance is small. From this point of view, the number average molecular weight of the acrylic polymer is preferably about 300,000 or more, more preferably about 400,000 to about 3,000,000.

Further, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, external adhesion may be suitably employed in the above adhesive. Joint agent. Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound or a melamine-based crosslinking agent to react. When an external crosslinking agent is used, the amount thereof to be used is appropriately determined depending on the balance with the base polymer to be crosslinked, and further depending on the use as the adhesive. In general, it is about 5 parts by weight or less with respect to 100 parts by weight of the above base polymer, and further preferably 0.1 parts by weight to 5 parts by weight. Further, if necessary, other additives such as various tackifiers and anti-aging agents known in the prior art may be used in addition to the above components in the adhesive.

Examples of the ultraviolet curable monomer component for blending include a urethane oligomer, a urethane (meth) acrylate, and a trimethylolpropane tri(meth) acrylate. Tetramethylol methane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(methyl) Acrylate, 1,4-butanediol di(meth)acrylate, and the like. Further, examples of the ultraviolet curable oligomer component include various oligomers such as urethanes, polyethers, polyesters, polycarbonates, and polybutadienes, and the molecular weight thereof is from about 100 to about 30,000. The scope is appropriate. The amount of the ultraviolet curable monomer component or the oligomer component can be appropriately determined depending on the type of the pressure-sensitive adhesive layer, and the amount of adhesion of the pressure-sensitive adhesive layer can be appropriately determined. In general, it is, for example, about 5 parts by weight to about 500 parts by weight, preferably about 40 parts by weight to about 150 parts by weight, per 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.

In addition, as an ultraviolet curing adhesive, in addition to the above described addition In addition to the UV-curable adhesive, an intrinsic UV-curable adhesive using a polymer having a carbon-carbon double bond in a polymer side chain or a main chain or a main chain terminal as a base polymer may be mentioned. Since the intrinsic type ultraviolet curable adhesive does not need to contain or contain a large amount of oligomer components of a low molecular weight component, the oligomer component or the like does not move in the adhesive over time, and a stable layer structure of the adhesive layer can be formed. Therefore, it is better.

As the base polymer having a carbon-carbon double bond, a polymer having a carbon-carbon double bond and having adhesiveness can be used without particular limitation. As the base polymer as described above, a polymer having an acrylic polymer as a basic skeleton is preferred. The basic skeleton of the acrylic polymer may, for example, be an acrylic polymer exemplified above.

The method of introducing the carbon-carbon double bond in the above acrylic polymer is not particularly limited, and various methods can be employed. However, introduction of a carbon-carbon double bond into a polymer side chain is relatively easy in molecular design. For example, a monomer having a functional group in an acrylic polymer is copolymerized in advance, and a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is maintained in a UV-bonded double bond. A method of performing a condensation or an addition reaction in the case of curability.

Examples of the combination of these functional groups include a carboxyl group, an epoxy group, a carboxyl group and an aziridine group, a hydroxyl group and an isocyanate group. In the combination of these functional groups, the ease of reaction tracking is considered, and a combination of a hydroxyl group and an isocyanate group is preferred. Further, if a combination of the above-mentioned acrylic polymer having a carbon-carbon double bond is produced by a combination of these functional groups, the functional group may be on either side of the acrylic polymer and the above compound, preferably in the above. In the combination, it is preferred that the acrylic polymer has a hydroxyl group and the above compound has an isocyanate group. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryl oxime isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α , α -dimethylbenzyl isocyanate. Wait. Further, as the acrylic polymer, an ether compound such as the above-exemplified hydroxyl group-containing monomer, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether can be used. A polymer obtained by copolymerization.

The above-mentioned intrinsic ultraviolet curable adhesive may be used alone as the base polymer (especially an acrylic polymer) having a carbon-carbon double bond, or may be formulated with the above ultraviolet curable monomer component or low in a range not impairing properties. Polymer component. The ultraviolet curable oligomer component or the like is usually in the range of from 0 part by weight to 30 parts by weight, preferably from 0 part by weight to 10 parts by weight, per 100 parts by weight of the base polymer.

The ultraviolet curable adhesive may contain a photopolymerization initiator when it is cured by ultraviolet rays or the like. As the photopolymerization initiator, for example, 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)one, α-hydroxy-α,α'-dimethylacetophenone can be exemplified. , α-keto alcohol compounds such as 2-methyl-2-hydroxypropiophenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylbenzene Ketone, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinylpropane-1 and other acetophenones; benzophenone A benzoin ether compound such as benzoin ethyl ether, benzoin isopropyl ether, fennel aceton methyl ether; a ketal compound such as benzyl dimethyl ketal; a fragrance such as 2-naphthalene sulfonate chloride Sulfonium chloride compound; 1-benzophenone-1,1-propane II Photoactive quinone compounds such as ketone-2-(o-ethoxycarbonyl) hydrazine; benzophenone, benzamidine benzoic acid, 3,3'-dimethyl-4-methoxybenzophenone, etc. Benzophenones; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone, 2,4-dimethylthioxanthone, isopropylthioxanthone, 2,4-dichloro Thioxanthone compounds such as thioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone; camphorquinone; halogenated ketone; decylphosphine oxide; decylphosphonic acid Ester and the like. The amount of the photopolymerization initiator to be used is, for example, about 0.05 part by weight to about 20 parts by weight based on 100 parts by weight of the base polymer such as an acrylic polymer constituting the adhesive.

In addition, as an ultraviolet-curable adhesive, an addition polymerizable compound having two or more unsaturated bonds and an alkoxy group having an epoxy group, which are disclosed in JP-A-60-196956, for example, may be mentioned. A rubber-based adhesive such as a photopolymerizable compound such as a decane or a photopolymerization initiator such as a carbonyl compound, an organic sulfur compound, a peroxide, an amine or an onium salt compound, or an acrylic adhesive.

The adhesive force of the adhesive layer 2 after ultraviolet curing with respect to the wafer bonding films 3, 3' is 0.001 N/10 mm wide to 1 N/10 mm wide, preferably 0.005 N/10 mm wide to 0.5 N/10 mm wide, and more It is preferably 0.01 N/10 mm wide to 0.1 N/10 mm wide (180 degree peeling force, peeling speed 300 mm/min). When the semiconductor wafer to which the adhesive of the wafer bonding film is bonded is picked up in the above numerical range, it is not necessary to excessively fix the semiconductor wafer, and better pickup property can be achieved.

As a method of forming the above-described portion 2a in the above-mentioned adhesive layer 2, a method in which the ultraviolet ray-curable pressure-sensitive adhesive layer 2 is formed on the substrate 1 and the portion 2a is partially irradiated with ultraviolet rays to be cured is exemplified. Partial ultraviolet The line irradiation can be performed by a photomask in which a pattern corresponding to the portion 3b or the like other than the semiconductor wafer pasting portion 3a is formed. Further, a method of curing by spot irradiation with ultraviolet rays or the like can be mentioned. The formation of the ultraviolet curable adhesive layer 2 can be carried out by transferring the ultraviolet curable adhesive layer provided on the separator to the substrate 1. Partial ultraviolet curing can also be performed on the ultraviolet curable adhesive layer 2 provided on the separator.

In the adhesive layer 2 in which the wafer bonding film 10 is diced, a part of the adhesive layer 2 can be irradiated with ultraviolet rays so that the adhesion of the above portion 2a is <the adhesion of the other portion 2b. That is, it is possible to use a substrate which shields at least one side of the substrate 1 corresponding to a portion other than the portion of the semiconductor wafer pasting portion 3a, or a part thereof, and forms an ultraviolet curable adhesive layer on the substrate. After that, ultraviolet irradiation is performed to cure the portion corresponding to the semiconductor wafer pasting portion 3a, thereby forming the portion 2a where the adhesion is lowered. A material that can be a photomask on the support film can be formed into a light-shielding material by printing, vapor deposition, or the like. Thereby, the dicing wafer bonding film 10 of the present invention can be efficiently produced.

The thickness of the adhesive layer 2 is not particularly limited, and is preferably from about 1 μm to about 50 μm, more preferably from about 2 μm to about 30 μm, from the viewpoint of preventing the chip cut surface from being cut and maintaining the adhesion of the adhesive layer. It is about 5 μm to about 25 μm.

The wafer bonding film 3 includes an adhesive composition and a filler containing fine particles (composed of fine particles), and the thickness of the wafer bonding film is Y (μm), and the maximum particle diameter of the filler is X (μm). In the case where the ratio X/Y is 1 or less, the wafer bonding film is not particularly limited.

The above filler may be an inorganic filler or an organic filler. From the viewpoint of improvement in workability and thermal conductivity, adjustment of melt viscosity, and imparting thixotropy, an inorganic filler is preferred.

The inorganic filler is not particularly limited, and examples thereof include cerium oxide, aluminum hydroxide, calcium hydroxide, magnesium hydroxide, antimony trioxide, calcium carbonate, magnesium carbonate, calcium citrate, magnesium citrate, and calcium oxide. Magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate, boron nitride, crystalline cerium oxide, amorphous cerium oxide, and the like. The above inorganic fillers may be used singly or in combination of two or more. From the viewpoint of improvement in thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline cerium oxide, amorphous cerium oxide, or the like is preferable. Further, from the viewpoint of balance with the adhesion of the wafer bonding film 3, cerium oxide is preferred. Further, examples of the organic filler include polyiminoimine, polyamidoximine, polyetheretherketone, polyetherimine, polyesterimide, nylon, and polyfluorene. The above organic fillers may be used singly or in combination of two or more.

The maximum particle diameter X (μm) of the above filler is preferably from 0.05 μm to 5 μm, more preferably from 0.05 μm to 3 μm. When the maximum particle diameter of the filler is 0.05 μm or more, the wafer bonding film having good wettability to the adherend can be obtained, and the decrease in adhesion can be suppressed. On the other hand, when the maximum particle diameter is 5 μm or less, the filler can be prevented from protruding from the surface of the wafer bonding film 3, and excessive stress can be locally applied to the semiconductor wafer at the time of wafer bonding. Further, in the present invention, a filler having different average particle diameters from each other may be used in combination. Further, the maximum particle diameter of the filler is, for example, a value obtained by a photometric type particle size distribution meter (manufactured by HORIBA, device name: LA-910).

The shape of the filler is not particularly limited, and for example, a spherical or ellipsoidal filler can be used.

The content of the filler is preferably in the range of from 1 part by weight to 80 parts by weight, more preferably from 1 part by weight to 50 parts by weight, per 100 parts by weight of the adhesive composition. When the content is 1 part by weight or more, the wafer bonding film having good wettability to the adherend can be obtained, and the decrease in adhesion can be suppressed. On the other hand, when the content is 80 parts by weight or less, the filler can be prevented from protruding from the surface of the wafer bonding film 3, and excessive stress can be locally applied to the semiconductor wafer at the time of wafer bonding.

Further, the content of the filler is preferably in the range of 1 part by volume to 40 parts by volume, and more preferably in the range of 1 part by volume to 30 parts by volume, based on 100 parts by volume of the above-mentioned adhesive composition. When the filler is one part by volume or more, the wafer bonding film having good wettability to the adherend can be obtained, and the decrease in adhesion can be suppressed. On the other hand, by making the filler material 80 parts by volume or less, it is possible to prevent the filler from protruding from the surface of the wafer bonding film 3, and to reduce the excessive stress applied locally to the semiconductor wafer at the time of wafer bonding.

Further, the thickness Y (μm) of the wafer bonding film 3 (the total thickness in the case of a laminate) is not particularly limited, but is preferably in the range of 1 μm to 5 μm, more preferably in the range of 2 μm to 4 μm. . When the thickness Y (μm) is 1 μm or more, the wafer bonding film having good wettability to the adherend can be obtained, and the decrease in adhesion can be suppressed. On the other hand, by making the thickness Y (μm) 5 μm or less, the filling material can be prevented from the wafer bonding film 3 The surface protrudes and reduces the excessive stress applied locally to the semiconductor wafer during wafer bonding.

The maximum cross-sectional height Rt of the roughness curve in the wafer bonding film 3 is preferably in the range of 0.1 μm to 2.3 μm, more preferably in the range of 1 μm to 1.5 μm. When the maximum cross-sectional height Rt is 0.1 μm or more, pickup can be facilitated. On the other hand, by setting the maximum cross-sectional height to 2.3 μm or less, it is possible to reduce the local application of excessive stress. However, according to JIS B 0601, and using a non-contact surface roughness measuring device (manufactured by Veeco, Japan, WYKO), the maximum cross-sectional height Rt of the above-described roughness curve is a value measured after the surface inclination is corrected.

The above-mentioned adhesive composition is not particularly limited, but is preferably an adhesive composition comprising an epoxy resin, a phenol resin, and an acrylic copolymer.

The epoxy resin is not particularly limited as long as it is used as an adhesive composition. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenation double can be used. Bifunctional epoxy resins such as phenol A, bisphenol AF, biphenyl, naphthalene, anthracene, phenol novolac, o-cresol novolac, trishydroxyphenylmethane, tetrahydroxyphenylethane or An epoxy resin such as a polyfunctional epoxy resin or a carbendazole type, a triglycidyl isocyanate type or a glycidylamine type. These epoxy resins may be used singly or in combination of two or more. These epoxy resins are particularly preferably epoxy resins having an aromatic ring such as a benzene ring, a biphenyl ring or a naphthalene ring in the present invention. Specific examples thereof include a phenolic epoxy resin, a phenol novolak type epoxy resin containing a benzene dimethyl skeleton, a biphenyl skeleton phenolic epoxy resin, a bisphenol A epoxy resin, a bisphenol F epoxy resin, and the like. Methyl phenol type epoxy resin, three Phenylmethane type epoxy resin, naphthalene type epoxy resin, and the like. The reason is that these epoxy resins have high reactivity with a phenol resin as a curing agent, and are excellent in heat resistance and the like. Further, the epoxy resin contains less ionic impurities or the like which cause corrosion of the semiconductor element.

The weight average molecular weight of the above epoxy resin is preferably in the range of 300 to 1,500, more preferably in the range of 350 to 1,000. When the weight average molecular weight is less than 300, the mechanical strength, heat resistance, and moisture resistance of the wafer bonding film 3 after heat curing may be lowered. On the other hand, when the weight average molecular weight exceeds 1,500, the wafer bonding film 3 after heat curing becomes rigid and may be weak. However, the weight average molecular weight in the present invention means the use of gel permeation chromatography (GPC), and a polystyrene-converted value using a calibration line according to standard polystyrene.

Further, the phenol resin is used as a curing agent for the epoxy resin, and examples thereof include a phenol novolak resin, a phenol biphenyl resin, a phenol aralkyl resin, a cresol novolak resin, a third butyl phenol novolak resin, and a nonylphenol phenol aldehyde. A phenolic phenol resin such as a resin, a phenol resin type phenol resin, or a polyoxy styrene such as polyoxy styrene. These phenol resins may be used singly or in combination of two or more. Among these phenol resins, a phenol novolac resin or a phenol aralkyl resin is preferred. This is because the connection reliability of the semiconductor device can be improved.

The weight average molecular weight of the above phenol resin is preferably in the range of 300 to 1,500, more preferably in the range of 350 to 1,000. When the weight average molecular weight is less than 300, the thermal curing of the epoxy resin may be insufficient and sufficient toughness may not be obtained. On the other hand, if the weight average molecule When the amount exceeds 1,500, the viscosity is high and the workability at the time of production of the wafer bonding film is lowered.

The blending ratio of the epoxy resin to the phenol resin is, for example, one equivalent per equivalent of the epoxy group in the epoxy resin component, and the hydroxyl group in the phenol resin is suitably from 0.5 equivalent to 2.0 equivalents. More suitably, it is 0.8 equivalent - 1.2 equivalent. In other words, if the blending ratio of both of them exceeds the above range, a sufficient curing reaction cannot be performed, and the properties of the cured epoxy resin are likely to deteriorate.

Further, the amount of the epoxy resin and the phenol resin blended is preferably in the range of 10 parts by weight to 200 parts by weight based on 100 parts by weight of the acrylic copolymer.

The acrylic copolymer is not particularly limited. However, in the present invention, a carboxyl group-containing acrylic copolymer and an epoxy group-containing copolymer are preferably contained. The functional group monomer used for the above-mentioned carboxyl group-containing acrylic copolymer is exemplified by acrylic acid or methacrylic acid. The content of acrylic acid or methacrylic acid is adjusted in such a manner that the acid value is in the range of 1 to 4. A remainder of the mixture may be a mixture of an alkyl acrylate having an alkyl group having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate, an alkyl methacrylate, styrene, or acrylonitrile. Particularly preferred among these compounds are ethyl (meth)acrylate and/or butyl (meth)acrylate. The mixing ratio is preferably adjusted in consideration of the glass transition point (Tg) of the above-described acrylic copolymer. Further, the method of polymerization is not particularly limited, and for example, a conventionally known method such as a solution polymerization method, a bulk polymerization method, a suspension polymerization method, or an emulsion polymerization method can be employed.

Further, the other monomer component copolymerizable with the above monomer component is not particularly limited, and examples thereof include acrylonitrile and the like. These copolymerizable monomers The amount of the component used is preferably in the range of 1% by weight to 20% by weight based on the total monomer component. By including a monomer component within the above numerical range, it is possible to improve the cohesive force, adhesion, and the like.

The polymerization method of the acrylic copolymer is not particularly limited, and for example, a conventionally known method such as a solution polymerization method, a bulk polymerization method, a suspension polymerization method, or an emulsion polymerization method can be employed.

The glass transition point (Tg) of the above acrylic copolymer is preferably from -30 ° C to 30 ° C, more preferably from -20 ° C to 15 ° C. By making the glass transition point -30 ° C or more, heat resistance can be secured. On the other hand, by setting the glass transition point to 30 ° C or lower, the effect of preventing the wafer from flying out after the dicing in the wafer having a rough surface state can be improved.

The weight average molecular weight of the above acrylic copolymer is preferably from 100,000 to 1,000,000, more preferably from 350,000 to 900,000. When the weight average molecular weight is 100,000 or more, the adhesion to the surface of the adherend at a high temperature can be excellent, and the heat resistance can be improved. On the other hand, when the weight average molecular weight is 1,000,000 or less, it can be easily dissolved in an organic solvent.

Further, other additives may be appropriately formulated for the wafer bonding films 3, 3' as needed. Examples of other additives include a flame retardant, a decane coupling agent, an ion trap, and the like.

Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. These flame retardants may be used singly or in combination of two or more.

Examples of the above decane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, γ-glycidoxypropyltrimethoxydecane, and γ-. Glycidoxypropylmethyldiethoxydecane, and the like. These compounds may be used singly or in combination of two or more.

Examples of the ion trapping agent include hydrotalcites and barium hydroxide. These ion trapping agents may be used singly or in combination of two or more.

The thermosetting acceleration catalyst for the epoxy resin and the phenol resin is not particularly limited, and for example, it is preferably formed of any of a triphenylphosphine skeleton, an amine skeleton, a triphenylborane skeleton, and a trihaloborane skeleton. Hey.

However, the wafer bonding film may be, for example, a single layer including only the adhesive layer. Further, a thermoplastic resin having a different glass transition temperature or a thermosetting resin having a different heat curing temperature may be suitably combined to form a multilayer structure of two or more layers. However, since the cutting water is used in the cutting step of the semiconductor wafer, the wafer bonding film may be hygroscopic and contain a water content of a normal state or higher. When the wafer bonding film having a high water content is directly attached to the substrate or the like, water vapor is accumulated at the subsequent interface in the post-curing stage, and the wafer is lifted. Therefore, by sandwiching the structure of the high moisture permeability core material with the adhesive layer as the wafer bonding film, water vapor is diffused through the film in the post-curing stage, so that the above problem can be avoided. From the viewpoint of the above, the wafer bonding film may be a multilayer structure in which an adhesive layer is formed on one side or both sides of the core material.

Examples of the core material include a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polycarbonate film, etc.), a glass fiber, and a plastic. A non-woven fiber-reinforced resin substrate, a mirror-finished wafer, a germanium substrate, or a glass substrate.

Further, the wafer bonding film 3 is preferably protected by a separator (not shown). The partition plate has a function of protecting the wafer bonding film as a protective material before being supplied to practical use. Further, the separator can be used as a support substrate when the wafer bonding films 3, 3' are transferred to the dicing film. The partition plate is peeled off when the workpiece is attached to the wafer bonding film. As the separator, polyethylene terephthalate (PET), polyethylene, polypropylene, or a plastic film surface-coated with a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate release agent may be used. Paper, etc.

(Method of Manufacturing Semiconductor Device)

The dicing wafer bonding films 10 and 12 of the present embodiment are used as described below by appropriately separating the separators arbitrarily provided on the wafer bonding films 3 and 3'. Hereinafter, a case where the dicing wafer bonding film 10 is used will be described as an example with reference to the drawings.

First, as shown in FIG. 1, the semiconductor wafer 4 is crimped onto the semiconductor wafer pasting portion 3a of the wafer bonding film 3 in the dicing wafer bonding film 10, and is then held and fixed (mounting step). This step is performed while pressing by a pressing means such as a pressure roller.

Next, the dicing of the semiconductor wafer 4 is performed. Thereby, the semiconductor wafer 4 is cut into a predetermined size and formed into individual pieces, thereby manufacturing the semiconductor wafer 5. The dicing is performed, for example, from the circuit surface side of the semiconductor wafer 4 in a general manner. Further, in this step, a so-called full cut cutting method or the like for cutting into the wafer bonding film 10 may be employed. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used. In addition, the semiconductor wafer is subsequently fixed by cutting the wafer bonding film 10, because This can suppress wafer nicking or wafer flying out, and can also suppress breakage of the semiconductor wafer 4.

Pickup of the semiconductor wafer 5 is performed in order to peel off the semiconductor wafer which is then fixed to the dicing wafer bonding film 10. The method of picking up is not particularly limited, and various methods known in the art can be employed. For example, a method in which the individual semiconductor wafers 5 are lifted up by a needle from the side of the dicing wafer bonding film 10, and the semiconductor wafer 5 which is lifted up by the pick-up device is picked up may be mentioned.

Since the adhesive layer 2 is of an ultraviolet curing type, picking up here is performed after irradiating ultraviolet rays to the above-mentioned adhesive layer. Thereby, the adhesive force of the adhesive layer 2 to the portion 3a adhered to the semiconductor wafer in the wafer bonding film is lowered, and the peeling of the semiconductor wafer 5 is facilitated. As a result, it is possible to pick up the semiconductor wafer without damage. The conditions such as the irradiation intensity and the irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be appropriately set as needed. Further, a light source used in ultraviolet irradiation may use a previously known light source.

The picked semiconductor wafer 5 can be then fixed (wafer bonded) to the adherend 6 through a wafer bonding film. The wafer bonding temperature at this time is preferably in the range of 100 ° C to 180 ° C, more preferably in the range of 100 ° C to 160 ° C. Further, the bonding pressure is preferably in the range of 0.05 MPa to 0.5 MPa, more preferably in the range of 0.05 MPa to 0.2 MPa. Further, the bonding time is preferably in the range of 0.1 second to 5 seconds, more preferably in the range of 0.1 second to 3 seconds. Even in the case of wafer bonding under the above-described conditions, in the present invention, the filler contained in the wafer bonding film can be reduced in stress concentration locally in the semiconductor wafer 5, so that the semiconductor wafer 5 can be effectively prevented from being damaged.

Examples of the adherend 6 include a lead frame, a TAB film, a substrate, or a semiconductor wafer manufactured by another method. The adherend 6 may be, for example, a deformed adherend which is easily deformed, or a non-deformable adherend (semiconductor wafer or the like) which is not easily deformed. As the substrate, a previously known substrate can be used. Further, as the lead frame, a metal lead frame such as a copper lead frame or a 42 alloy lead frame or an organic substrate including a glass epoxy resin, BT (bis-butylene hydrazide-triazine), or polyimine may be used. . However, the present invention is not limited thereto, and includes a circuit board that can be used by mounting a semiconductor element and electrically connecting the semiconductor element.

Since the wafer bonding film 3 of the present invention is of a thermosetting type, the semiconductor wafer 5 can be subsequently fixed to the adherend 6 by heat curing to improve the heat resistance. Further, a material obtained by subsequently fixing the semiconductor wafer 5 to the substrate or the like by the semiconductor wafer bonding portion 3a can be supplied to the reflow soldering step.

Further, the wafer bonding described above can be temporarily fixed only to the adherend 6 without curing the wafer bonding film 3. Thereafter, wire bonding is performed without a heating step, and the semiconductor wafer is sealed with a sealing resin, and the sealing resin may be post-cured.

In this case, as the wafer bonding film 3, a wafer bonding film having a shearing force at the time of temporary fixing of 0.2 MPa or more with respect to the adherend 6 is used, and it is preferable to use a shearing force of 0.2 MPa to 10 MPa. The wafer bonding film within the range. If the shear bonding force of the wafer bonding film 3 is at least 0.2 MPa or more, the wire bonding step is performed even without a heating step, and the wafer bonding film 3 and the semiconductor wafer 5 or the adherend are in the above steps due to ultrasonic vibration or heating. The back surface of 6 does not produce offset deformation. That is, semiconductor The components are not moved by the ultrasonic vibration when the wire is engaged, thereby preventing the success rate of the wire bonding from being lowered.

The wire bonding is a step of electrically connecting the end of the terminal portion (internal lead) of the adherend 6 to an electrode pad (not shown) on the semiconductor wafer by the bonding wire 7 (refer to FIG. 3). As the bonding wire 7, for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of wire bonding is carried out at 80 ° C to 250 ° C, preferably in the range of 80 ° C to 220 ° C. In addition, the heating time of the wire bonding is performed for several seconds to several minutes. The connection is performed by heating in a temperature range of the above-described temperature range by using a combination of ultrasonic vibration energy and pressure applied.

This step can be performed without partially thermally curing the portion 3a adhered to the semiconductor wafer in the wafer bonding film. In addition, in the process of this step, the semiconductor wafer 5 and the adherend 6 are not fixed by the portion 3a of the wafer bonding film adhered to the semiconductor wafer.

The above sealing step is a step of sealing the semiconductor wafer 5 by the sealing resin 8 (refer to FIG. 3). This step is performed to protect the semiconductor wafer 5 or the bonding wires 7 mounted on the adherend 6. This step is carried out by molding a resin for sealing using a mold. As the sealing resin 8, for example, an epoxy resin can be used. The heating temperature at the time of resin sealing is usually carried out at 175 ° C for 60 seconds to 90 seconds, but the present invention is not limited thereto, and for example, it may be cured at 165 ° C to 185 ° C for several minutes. Thereby, the semiconductor wafer 5 and the adherend 6 are fixed by the portion 3a adhered to the semiconductor wafer in the wafer bonding film while the sealing resin is cured. That is, in the present invention, even in the case where the post-cure step to be described later is not performed, in this step, Fixing by the portion 3a adhered to the semiconductor wafer in the wafer bonding film can contribute to reducing the number of manufacturing steps and shortening the manufacturing time of the semiconductor device.

In the post-cure step described above, the sealing resin 8 which is insufficiently cured in the sealing step described above is completely cured. Even in the case where the fixation of the portion 3a adhered to the semiconductor wafer in the wafer bonding film is not performed in the sealing step, in this step, it can be performed together with the hardening of the sealing resin 8 by the wafer bonding film. Fixing of the portion 3a to which the semiconductor wafer is pasted. The heating temperature in this step varies depending on the type of the sealing resin, and is, for example, in the range of 165 ° C to 185 ° C, and the heating time is from about 0.5 hours to about 8 hours.

Further, as shown in FIG. 4, the dicing wafer bonding film of the present invention can also be applied to a case where a plurality of semiconductor wafer layers are three-dimensionally mounted. 4 is a schematic cross-sectional view showing an example in which a semiconductor wafer is three-dimensionally mounted by a wafer bonding film. In the case of the three-dimensional mounting as shown in FIG. 4, first, the portion 3a adhered to the semiconductor wafer in at least one of the wafer bonding films cut into the same size as the semiconductor wafer is temporarily fixed on the adherend 6, and then passed. The portion 3a of the wafer bonding film to be bonded to the semiconductor wafer is temporarily fixed such that the semiconductor wafer 5 has its wire bonding surface as the upper side. Then, the wafer bonding film 13 is temporarily fixed by avoiding the electrode pad portion of the semiconductor wafer 5. Further, the other semiconductor wafer 15 is temporarily fixed to the wafer bonding film 13 so that the wire bonding surface thereof is on the upper side.

Then, the wire bonding step is performed without performing the heat curing step. Thereby, each of the electrode pads of the semiconductor wafer 5 and the other semiconductor wafer 15 is electrically connected to the adherend 6 by the bonding wires 7. Next, using sealing resin 8 A sealing step of sealing the semiconductor wafer 5 or the like is performed, and the sealing resin is cured. At the same time, the adherend 6 and the semiconductor wafer 5 are fixed by the portion 3a adhered to the semiconductor wafer in the wafer bonding film. Further, the semiconductor wafer 5 and the other semiconductor wafer 15 are fixed by the wafer bonding film 13. Alternatively, after the sealing step, a post-cure step can be performed.

Even in the case of three-dimensional mounting of a semiconductor wafer, heat treatment by heating of the portion 3a and the wafer bonding film 13 adhered to the semiconductor wafer in the wafer bonding film is not performed, so that the manufacturing steps can be simplified and the yield can be improved. . Further, the adherend 6 does not warp, and the semiconductor wafer 5 and the other semiconductor wafer 15 are not cracked, so that the semiconductor element can be further reduced in thickness.

Further, as shown in FIG. 5, three-dimensional mounting of a spacer between the semiconductor wafers by the wafer bonding film can be performed. At this time, first, the portion 3a of the wafer bonding film adhered to the semiconductor wafer, the semiconductor wafer 5, and the wafer bonding film 21 are sequentially laminated on the adherend 6 and temporarily fixed. Further, the spacers 9, the wafer bonding film 21, and the portion 3a of the wafer bonding film adhered to the semiconductor wafer and the semiconductor wafer 5 are sequentially laminated on the wafer bonding film 21 and temporarily fixed. Next, the wire bonding step shown in FIG. 5 is performed without performing the heating step. Thereby, the electrode pads in the semiconductor wafer 5 are electrically connected to the adherend 6 by the bonding wires 7.

Then, a sealing step of sealing the semiconductor wafer 5 by the sealing resin 8 is performed, and while the sealing resin 8 is cured, the portion 3a adhered to the semiconductor wafer in the wafer bonding film, the wafer bonding film 21 will be adhered. 6 and between the semiconductor wafer 5 and between the semiconductor wafer 5 and the spacer 9 With. Thereby, a semiconductor package is obtained. The sealing step is preferably a one-time sealing method in which only one side of the semiconductor wafer 5 is sealed. The sealing is performed to protect the semiconductor wafer 5 attached to the adhesive sheet. As a method thereof, it is represented by molding using a sealing resin 8 in a mold. During sealing, the sealing step is generally performed simultaneously using a mold comprising an upper mold having a plurality of cavities and a lower mold. The heating temperature at the time of resin sealing is preferably, for example, in the range of 170 ° C to 180 ° C. A post-cure step can also be performed after the sealing step. However, the upper spacer 9 is not particularly limited, and a conventionally known tantalum wafer, polyimide film, or the like can be used. Further, as the separator, a core material such as a polyimide film or a resin substrate can be used.

Then, the above semiconductor package is mounted on the surface of the printed circuit board. The surface mounting method is, for example, a reflow soldering in which solder is supplied to a printed circuit board and then heated and melted by hot air or the like to perform soldering. Examples of the heating method include hot air reflux, infrared reflux, and the like. In addition, it may be any form of overall heating or local heating. The heating temperature is preferably in the range of 240 ° C to 265 ° C and the heating time is preferably in the range of 1 second to 20 seconds.

(something else)

When the semiconductor element is three-dimensionally mounted on the substrate or the like, a buffer coating film is formed on the surface side of the circuit on which the semiconductor element is formed. The buffer coating film may, for example, be a material including a heat resistant resin such as a tantalum nitride film or a polyimide resin.

Further, in the three-dimensional mounting of the semiconductor element, the wafer bonding film used in each stage is not limited to the wafer bonding film including the material of the same composition. It can be changed suitably according to a manufacturing condition or use.

Further, in the above-described embodiment, the method of performing the wire bonding step at a time after laminating a plurality of semiconductor elements on a substrate or the like is described, but the present invention is not limited thereto. For example, the wire bonding step may be performed by laminating a semiconductor element on a substrate or the like each time.

Instance

Hereinafter, the preferred embodiments of the present invention will be described in detail. However, the materials, the blending amounts, and the like described in the examples are not intended to limit the scope of the present invention to the ranges unless otherwise specified. . In addition, parts are meant herein by weight.

(Example 1)

12 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 36 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL Co., Ltd., trade name Revital AR31), 36 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E2, maximum 40 parts by weight of a particle diameter of 1.4 μm and an average particle diameter of 0.5 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film A having a thickness of 5 μm was produced.

(Example 2)

4 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 12 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL CO., LTD., trade name: Revital AR31), 12 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E2, maximum 80 parts by weight of a particle diameter of 1.4 μm and an average particle diameter of 0.5 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film B having a thickness of 5 μm was produced.

(Example 3)

12 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 36 parts by weight of an acrylic acid copolymer (manufactured by NOGAWA CHEMICAL CO., LTD., trade name Revital AR31), 36 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E2, maximum 40 parts by weight of a particle diameter of 1.4 μm and an average particle diameter of 0.5 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film C having a thickness of 3 μm was produced.

(Example 4)

4 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 12 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL CO., LTD., trade name: Revital AR31), 12 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E2, maximum 80 parts by weight of a particle diameter of 1.4 μm and an average particle diameter of 0.5 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film D having a thickness of 3 μm was produced.

(Example 5)

12 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 12 parts by weight, acrylic acid copolymer (manufactured by NOGAWA CHEMICAL Co., Ltd., trade name Revital AR31) 36 weight 40 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E3, maximum particle diameter: 5.0 μm, average particle diameter: 0.9 μm) was dissolved in methyl ethyl ketone, and An adhesive composition having a concentration of 15.0% by weight was prepared.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film E having a thickness of 5 μm was produced.

(Example 6)

4 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 12 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL CO., LTD., trade name: Revital AR31), 12 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E3, maximum 80 parts by weight of a particle diameter of 5.0 μm and an average particle diameter of 0.9 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film F having a thickness of 5 μm was produced.

(Comparative Example 1)

Trihydroxyphenylmethane type epoxy resin (Nippon Chemical Co., Ltd. Seiko, trade name: EPPN-501HY) 12 parts by weight, benzene dimethyl phenolic phenol resin (manufactured by Mingwa Chemical Co., Ltd.), trade name: MEH7800H) 12 parts by weight, acrylic acid copolymer (NOGAWA CHEMICAL Co., Ltd.) 36 parts by weight of a spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E3, maximum particle diameter: 5.0 μm, average particle diameter: 0.9 μm), 40 parts by weight, dissolved in the product name: Revital AR31) Methyl ethyl ketone was used to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film G having a thickness of 3 μm was produced.

(Comparative Example 2)

4 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 12 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL CO., LTD., trade name: Revital AR31), 12 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E3, maximum 80 parts by weight of a particle diameter of 5.0 μm and an average particle diameter of 0.9 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied to a thickness of 38 μm after the release treatment of the polyoxyalkylene as a release liner, including polyethylene terephthalate. The film was released from the film and then dried at 130 ° C for 2 minutes. Thereby, a thermosetting wafer bonding film H having a thickness of 3 μm was produced.

(Comparative Example 3)

12 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 36 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL Co., Ltd., trade name: Revital AR31), 36 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E5, maximum 40 parts by weight of a particle diameter of 8.0 μm and an average particle diameter of 1.3 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film 1 having a thickness of 5 μm was produced.

(Comparative Example 4)

4 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 12 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL CO., LTD., trade name: Revital AR31), 12 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E5, maximum Particle size 8.0μm, average particle 80 parts by weight of a diameter of 1.3 μm was dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film J having a thickness of 5 μm was produced.

(Comparative Example 5)

12 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 36 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL Co., Ltd., trade name: Revital AR31), 36 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E5, maximum 40 parts by weight of a particle diameter of 8.0 μm and an average particle diameter of 1.3 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film K having a thickness of 3 μm was produced.

(Comparative Example 6)

4 parts by weight of a trishydroxyphenylmethane type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: EPPN-501HY), a benzene phenol novolac type phenol resin (manufactured by Megumi Kasei Co., Ltd.), trade name: MEH7800H) 12 parts by weight of acrylic acid copolymer (manufactured by NOGAWA CHEMICAL CO., LTD., trade name: Revital AR31), 12 parts by weight of spherical cerium oxide (manufactured by ADMATECHS Co., Ltd., trade name: SO-E5, maximum 80 parts by weight of a particle diameter of 8.0 μm and an average particle diameter of 1.3 μm were dissolved in methyl ethyl ketone to prepare a binder composition having a concentration of 15.0% by weight.

The adhesive composition solution was applied onto a release-treated film comprising a polyethylene terephthalate film having a thickness of 38 μm after demolding of the polyoxyalkylene as a release liner, followed by drying at 130 ° C. minute. Thereby, a thermosetting wafer bonding film L having a thickness of 3 μm was produced.

(Measurement of average particle size and maximum particle size of filler)

The measurement of the average particle diameter and the maximum particle diameter of the filler was carried out using a photometric particle size distribution meter (manufactured by HORIBA, device name: LA-910). The results are shown in Tables 1 and 2 below. However, the maximum particle diameter is a two-dimensional graph in which the horizontal axis is the particle diameter and the vertical axis is the relative particle number, and when the area surrounded by the reference line and the curve is 100%, the particle diameter is calculated from the smaller particle diameter side. The particle diameter when the cumulative area of the area is 100% is taken as the maximum particle diameter.

(maximum profile height Rt of the rough curve)

The maximum profile height Rt of the roughness curve of the thermosetting wafer bonding film produced in each of the examples and the comparative examples was based on JIS B0601, and the surface was measured using a non-contact surface roughness measuring device (manufactured by Veeco, Japan, WYKO). The measurement is performed after the inclination is corrected. The results are shown in Table 1 and Table 2 below.

(Is there any confirmation of damage to the semiconductor wafer)

First, a cut film is produced. Namely, a solution of an acrylic adhesive composition was applied onto a substrate including polyolefin having a thickness of 100 μm, and then dried to form an adhesive layer having a thickness of 10 μm to produce a dicing film.

Further, the solution of the above acrylic adhesive is prepared in the following manner. Namely, butyl acrylate, ethyl acrylate, 2-hydroxy acrylate and acrylic acid were first copolymerized at a ratio of 60/40/4/1 to obtain an acrylic polymer having a weight average molecular weight of 800,000. Next, 0.5 parts by weight of a polyfunctional epoxy-based crosslinking agent as a crosslinking agent and 90 parts by weight of dipentaerythritol monohydroxypentaacrylate as a photopolymerizable compound were added to the acrylic polymer as a photopolymerization initiator. The α -hydroxycyclohexyl ketone was 5 parts by weight, and the compounds were uniformly dissolved in toluene as an organic solvent. Thereby, a solution of the above acrylic adhesive was produced.

Then, the thermosetting wafer bonding film on the release mold is attached to the adhesive layer of the above-mentioned dicing die. The bonding conditions were set to a lamination temperature of 40 ° C and a line pressure of 5 kgf / cm. Thereby, a dicing wafer bonding film having the thermally cured wafer bonding film of each of the examples and the comparative examples was produced.

Next, a semiconductor wafer (12-inch in diameter and 50 μm in thickness) was mounted on the thermosetting wafer bonding film of each of the diced wafer bonding films. The installation conditions are as follows.

[Finishing conditions]

Adhesive device: Nitto Seiki mechanism, MA-30000III

Adhesive speed: 10mm/sec

Adhesive pressure: 0.25MPa

Platform temperature when pasting: 40 ° C

Thereafter, the semiconductor wafer was diced to form a semiconductor wafer having a wafer size of 5 mm square. The cutting conditions are as follows.

[Cutting conditions]

Cutting device: manufactured by DISCO, DFD-6361

Cutting ring: 2-8-1 (manufactured by DISCO)

Cutting speed: 80mm/sec

Cutting blade: manufactured by DISCO 2050HEDD

Cutting blade speed: 40,000 rpm

Blade height: 0.170mm

Cutting method: A mode / stage cut (step cut)

Further, each of the dicing wafer bonding films is stretched, and an expend step is performed so that the respective wafers have a predetermined interval. Thereafter, the semiconductor wafer is picked up together with the wafer bonding film by means of a pin-up from the substrate side of each of the diced wafer bonding films. The pickup conditions are as follows.

[Picking conditions]

Needle: total length 10mm, diameter 0.7mm, sharp angle 15deg, tip R350μm

Number of stitches: 5

Needle top amount: 350μm

Needle jacking speed: 5mm/sec

Collet retention time: 200msec

Expansion amount: 3mm

Next, the picked semiconductor wafer is wafer bonded on the lead frame, Further, the damage of the semiconductor wafer at this time was confirmed. The results are shown in Tables 1 and 2 below. However, the conditions for wafer bonding are as follows.

[Wafer bonding conditions]

Wafer bonding temperature: 120 ° C

Joint pressure: 0.1MPa

Bonding time: 1sec

Post-cure: 1 hour at 150 ° C

(result)

As is apparent from Tables 1 and 2 below, the ratio of the thickness Y (μm) to the maximum particle diameter X (μm) of the filler X/μ is 1 as in the thermosetting wafer bonding film of each example of the present invention. Hereinafter, the semiconductor wafer can be bonded to the lead frame without being damaged. On the other hand, in the thermosetting wafer bonding film of each comparative example in which the ratio X/Y exceeded 1, the semiconductor wafer was damaged at the time of wafer bonding.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

1‧‧‧Substrate

2‧‧‧Adhesive layer

2a‧‧‧The part of the adhesive layer corresponding to the adhesion of the semiconductor wafer

2b‧‧‧Other parts of the adhesive layer

3, 3', 13, 21‧‧‧ wafer bonding film (thermosetting wafer bonding film)

3a‧‧‧A portion of the wafer bonding film pasted with the semiconductor wafer

3b‧‧‧Other parts of the wafer bonding film

4‧‧‧Semiconductor wafer

5, 15‧‧‧ semiconductor wafer

6‧‧‧Adhesive body

7‧‧‧bonding line

8‧‧‧ Sealing resin

9‧‧‧ spacer

10, 11‧‧‧ cutting wafer bonding film

Fig. 1 is a schematic cross-sectional view showing a diced wafer bonding film according to an embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view showing another dicing wafer bonding film of the above embodiment.

3 is a schematic cross-sectional view showing an example in which a semiconductor wafer is mounted by a wafer bonding film according to an embodiment of the present invention.

4 is a schematic cross-sectional view showing an example in which a semiconductor wafer is three-dimensionally mounted by the above-described wafer bonding film.

Fig. 5 is a schematic cross-sectional view showing an example in which two semiconductor wafers are three-dimensionally mounted via a spacer using the above wafer bonding film.

1‧‧‧Substrate

2‧‧‧Adhesive layer

2a‧‧‧The part of the adhesive layer corresponding to the adhesion of the semiconductor wafer

2b‧‧‧Other parts of the adhesive layer

3‧‧‧ wafer bonding film (thermosetting wafer bonding film)

3a‧‧‧A portion of the wafer bonding film pasted with the semiconductor wafer

3b‧‧‧Other parts of the wafer bonding film

4‧‧‧Semiconductor wafer

10‧‧‧Cut wafer bonding film

Claims (5)

A thermosetting wafer bonding film comprising an adhesive composition and a filler containing fine particles, wherein a thickness of the thermosetting wafer bonding film is set to Y (μm), and a maximum particle diameter of the filling material is set to The ratio X/Y at X (μm) is 1 or less, wherein X (μm) is in the range of 0.05 μm to 5 μm, and the content of the filler is 1 in relation to 100 parts by weight of the above-mentioned adhesive composition. The content of the above filler is in the range of 1 part by volume to 40 parts by volume based on 100 parts by volume of the above-mentioned adhesive composition in the range of -80 parts by weight. The thermosetting wafer bonding film according to claim 1, wherein the Y (μm) is in the range of 1 μm to 5 μm. The thermosetting wafer bonding film according to claim 1 or 2, wherein the maximum profile height Rt of the roughness curve in the thermosetting wafer bonding film is in the range of 0.1 μm to 2.3 μm. A dicing wafer bonding film which is laminated on a dicing film with a thermosetting wafer bonding film as described in claim 1 of the patent application. A method of manufacturing a semiconductor device using the dicing wafer bonding film according to claim 4, wherein the semiconductor device manufacturing method comprises: a bonding step of using the thermosetting wafer bonding film as a bonding surface, and The back surface of the semiconductor wafer is bonded to the dicing wafer bonding film; the dicing step is performed by cutting the semiconductor wafer together with the thermosetting wafer bonding film to form a semiconductor wafer; a picking step of picking up the semiconductor wafer from the dicing wafer bonding film together with the thermosetting wafer bonding film; and a wafer bonding step through the thermosetting wafer bonding film, and at a temperature of 100 ° C to 180 ° C, a bonding pressure of 0.05 The semiconductor wafer wafer was bonded to the adherend under the conditions of MPa to 0.5 MPa and a bonding time of 0.1 second to 5 seconds.