TWI430045B - Projection optical device, exposure method and device, reticle, and method for manufacturing component and reticle - Google Patents

Description

Projection optical device, exposure method and device, reticle, and method for manufacturing component and reticle

The present invention relates to a projection optical device in which an enlarged image of a first object such as a photomask is formed on a second object such as a light-receiving substrate, and an exposure technique and a device manufacturing technique using the projection optical device. Further, the present invention relates to a photomask formed with a pattern transferred by a projection optical device, and a method of manufacturing the photomask.

For example, when manufacturing a semiconductor element, a liquid crystal display element, or the like, a pattern of a reticle (mask, mask, etc.) is projected onto a plate coated with a photoresist (a glass plate, a semiconductor wafer, etc.) via a projection optical system. Projection exposure device on). Previously, a projection exposure apparatus (steper) in which the patterns of the respective masks were uniformly exposed to the respective exposure irradiation areas on the panel in a step and repeat manner was used. In recent years, there has been proposed a scanning type projection exposure apparatus having a step and scan method in which not a large projection optical system is used, but a plurality of lines are arranged at predetermined intervals along the scanning direction to have a multiple A plurality of partial projection optical systems having a small magnification, on the one hand, scanning the reticle and the plate, and on the other hand, exposing the patterns of the respective reticle to the plate by respective partial projection optical systems.

In the above scanning type projection exposure apparatus, the plurality of partial projection optical systems respectively include a catadioptric optical system having a concave mirror (or a mirror) and a lens to form an intermediate image, and another partial reflection and refraction optical system, the projection exposure The device utilizes various partial projection optical systems, An equal-fold positive image of the pattern on the mask is formed on the board.

In recent years, the board has become increasingly large, and it has begun to gradually use boards of more than 2 meters square. Here, when the exposure apparatus of the step-and-scan type described above is used for exposure on a large-sized board, since the partial projection optical system has an equal magnification, the size of the mask is also increased. Regarding the cost of the reticle, since it is necessary to maintain the planarity of the reticle substrate, the larger the area, the more complicated the manufacturing steps, and the larger the size, the higher the cost. Further, for example, in order to form a thin film transistor portion of a liquid crystal display element, a 4 to 5 layer mask is usually required, which requires a large cost. Therefore, there has been proposed a scanning type projection exposure apparatus which reduces the magnifications of a plurality of partial projection optical systems arranged in two rows, for example, along the scanning direction, to respective magnifications by using a multi-lens system. A mask pattern (for example, refer to Patent Document 1).

[Patent Document 1] US Patent No. 6512573

However, in the above multi-lens system having magnification, the optical axis on the reticle of each partial projection optical system is actually disposed at the same position as the optical axis on the board. Therefore, there is a problem that the patterns that are scanned and exposed on the board cannot be joined to each other by the different partial projection optical systems.

The present invention has been made in view of the above circumstances, and an object thereof is to provide a projection technique and an exposure technique, and a component manufacturing technique using the same, in which a plurality of projection optical systems (partial projection optical systems) are used to scan an enlarged image of a mask pattern in a scanning exposure manner. When formed on an object such as a board, pattern transfer can be performed favorably.

Furthermore, it is an object of the present invention to provide a reticle and a manufacturing technique thereof that can be used when using the above projection technique or exposure technique.

Further, in the first projection optical device of the present invention, the enlarged image of the first object (MA) disposed in the first surface is formed on the second object (PT), and the second object (PT) can be enlarged. The first projection optical device includes a first row of projection optical systems and a second row of projections so as to be relatively movable along a predetermined first direction (X direction) in a second surface that is separated from the first surface. An optical system, wherein the first-line projection optical system includes a plurality of fields of view (OF1, OF3, and OF5) in a first row (C1) along a second direction (Y direction) transverse to the first direction. Projection optical systems (PL1, PL3, PL5) including a field of view (OF2) in a second row (C2) different from the first row in the row along the second direction , OF4) multiple projection optical systems (PL2, PL4). The first-line projection optical system forms a plurality of image fields (IF1, IF3, and IF5) conjugate with a plurality of fields of view of the first-line projection optical system in a third row (C3) in the second surface. The second-line projection optical system forms a plurality of image fields (IF2, IF4) conjugate with the plurality of fields of view of the second-line projection optical system in the fourth row (C4) of the second surface. When the first row to the fourth row are viewed from the direction in which the first surface and the second surface are connected, the first row is located between the second row and the fourth row, and the second row Located between the first row and the third row.

In the second projection optical device of the present invention, the enlarged image of the first object (MA) disposed in the first surface is formed on the second object (PT), and the second object The object (PT) is disposed in the second surface so as to be relatively movable in the predetermined first direction (X direction) with respect to the enlarged image. The second projection optical device includes a first projection optical system (PL1) and a second projection optical system (PL2), wherein the first projection optical system (PL1) has a predetermined first viewpoint on the first surface (a) The emitted light beam is guided to the first conjugate point (A) on the second surface corresponding to the first viewpoint, and the enlarged image of the first object in the first surface is formed in the second surface In the second object, the second projection optical system (PL2) guides the light beam emitted from the predetermined second viewpoint (b) on the first surface to the second surface corresponding to the second viewpoint. The second conjugate point (B) forms an enlarged image of the first object in the first surface on the second object in the second surface. The first projection optical system includes first beam transfer members (FM1, FM2) for causing a light beam from the first viewpoint to be displaced in the first direction with respect to the first viewpoint, and transferring the light beam to the first viewpoint a first conjugate point; the second projection optical system includes second beam transfer members (FM3, FM4) for causing a light beam from the second viewpoint to be displaced in the first direction with respect to the second viewpoint The beam is transferred to the second conjugate point. When the second surface is used as the projection surface, the first viewpoint is orthogonally projected on the second surface from the second direction (Y direction) orthogonal to the first direction in the second surface. a first line segment (a'A) in which the projection point is connected to the first conjugate point, and a second projection point orthogonally projected on the second surface by the second viewpoint is connected to the second conjugate point The resulting second line segments (b'B) overlap.

Further, in the third projection optical device of the present invention, the enlarged image of the first object (MA) disposed in the first surface is formed on the second object (PT). The second object (PT) is disposed in the second surface so that the enlarged image can relatively move in a predetermined first direction (X direction), and the third projection optical device includes the first projection optical system (PL1) ) and the second projection optical system (PL2). The first projection optical system (PL1) guides the light beam emitted from the predetermined first viewpoint (a) on the first surface to the first conjugate point on the second surface corresponding to the first viewpoint ( A), the enlarged image of the first surface is formed on the second object in the second surface; and the second projection optical system (PL2) issues the predetermined second viewpoint (b) on the first surface The light beam is guided to the second conjugate point (B) on the second surface corresponding to the second viewpoint, and the enlarged image of the first surface is formed on the second object in the second surface. The first projection optical system includes a first light beam transfer member that shifts a light beam from the first viewpoint to a direction (Y direction) transverse to the first direction with respect to the first viewpoint, and transfers the light beam To the first conjugate point, the second projection optical system includes a second beam transfer member for causing the light beam from the second viewpoint to be transverse to the first direction (Y direction) with respect to the second viewpoint A displacement is generated and the beam is transferred to the second conjugate point.

Further, in the first projection exposure apparatus of the present invention, the second object is exposed by the illumination light via the first object, and the first projection exposure apparatus includes an illumination optical system (IU), the projection optical device (PL) of the present invention, and Platform organization (MSTG, PSTG). The illumination optical system (IU) illuminates the first object with the illumination light, and the projection optical device (PL) forms an image of the first object illuminated by the illumination optical system on the second object. The institution (MS TG, PSTG) makes the first object and the first The object is relatively moved in the first direction by the magnification of the projection optical device as the speed ratio.

Further, in the second projection exposure apparatus of the present invention, the first object disposed in the first surface and the second object disposed in the second surface are relatively moved in a predetermined scanning direction, and exposure is performed. The second projection exposure apparatus includes a first projection optical system (PL1), a second projection optical system (PL2), and a platform mechanism (MSTG, PSTG), and the first projection optical system and the second projection optical system are in the scanning direction. The magnification is less than -1, wherein the first projection optical system (PL1) forms a part of the enlarged image of the first object in the first field of view region (OF1) in the first surface in the second surface. In the first projection area (IF1), the second projection optical system (PL2) forms another enlarged image of the first object in the second field of view (OF2) in the first plane in the second plane In the second projection area (IF2), the platform mechanism (MSTG, PSTG) uses the first object and the second object as the speed ratio in the scanning direction of the first projection optical system and the second projection optical system. And move relatively in the scanning direction.

Further, the exposure method of the present invention is a method of exposing a second object by illumination light via a first object, the exposure method comprising the steps of: illuminating the first object with the illumination light; and illuminating the first object The image is projected onto the second object by the projection optical device (PL) of the present invention; and the first object and the second object are used as the speed ratio by the magnification ratio of the projection optical device. Relative movement in 1 direction.

Further, the component manufacturing method of the present invention includes an exposure step and a development step, wherein the exposure step is to use the projection exposure apparatus of the present invention to make light The pattern of the cover is exposed on the photosensitive substrate, and the developing step is to develop the photosensitive substrate exposed by the exposure step.

Next, the photomask of the present invention is for transferring a pattern onto a predetermined substrate, and the photomask (MA1) includes a first row pattern formed by being spaced apart from each other along a first direction (Y direction) on the photomask. Part (EM10) and second line pattern part (EM20). The pattern portion of the first row has a first reverse pattern (RP10) which is a first original pattern region which is a partial region of the original pattern corresponding to the pattern transferred onto the predetermined substrate. The inner pattern is formed by inverting the first direction as an axis of symmetry, and the second row pattern portion has a second inversion pattern (RP20), and the second inversion pattern (RP20) is the first original pattern Patterns in the second original pattern region having different pattern regions are formed by inverting the first direction as an axis of symmetry, and the first row pattern portion and the second row pattern portion have a common inversion pattern (RPc). The common inversion pattern (RPc) is formed by inverting the original pattern in the common region between the first original pattern region and the second original pattern region with the first direction as an axis of symmetry.

Moreover, the method of manufacturing a photomask according to the present invention is a method of manufacturing the photomask of the present invention, the method of manufacturing the photomask comprising the steps of: preparing the original pattern; and extracting the first pattern data (PD1) and the second pattern data (PD2) And a common pattern material (PDC), wherein the first pattern data (PD1) is a part of the original pattern, that is, the material of the original pattern in the first original pattern area, and the second pattern data (PD2) is The material of the original pattern in the second original pattern region different in the first original pattern region, the common pattern material (PDC) is located between the first original pattern region and the second original pattern region a material of the original pattern in the common pattern area; and the first pattern data, the second pattern data, and the common pattern data are respectively inverted by using the first direction as an axis of symmetry, thereby obtaining a first reverse pattern Data (RPD1), second reverse pattern data (RPD2), and common reverse pattern data (RPDc); and the first reverse pattern data and the common reverse pattern data are drawn on the first region of the mask And the second inversion pattern data and the common inversion pattern data are drawn on the second region of the mask to form the first row pattern portion and the second row pattern portion.

Further, the photomask of the present invention is a photomask for transferring a pattern onto a predetermined substrate using a first projection optical system having a predetermined projection magnification and a second projection optical system, the photomask being provided along the photomask The first row pattern portion (EM10) and the second row pattern portion (EM20) formed by the first direction (Y direction) are spaced apart from each other, and the first transfer region (EP10) is formed by the first projection optical system ( PL1) obtained by transferring the pattern portion of the first row onto the substrate, wherein the second transfer region (EP20) transfers the pattern portion of the second row to the second projection optical system (PL2) Obtained in a region on the substrate, the first transfer region (EP10) partially overlaps the second transfer region (EP20) in the second direction (Y direction) on the substrate, and along the second direction The distance between the center of the first transfer region and the center of the second transfer region is different from the center of the pattern portion of the first row along the first direction and the center of the pattern portion of the second row. distance.

Furthermore, the bracketed symbols attached to the predetermined elements of the present invention correspond to the components in the drawings showing an embodiment of the present invention, but the respective symbols are merely examples of the elements of the present invention, to make the present invention easy. Understand The present invention is not limited to the configuration of this embodiment.

According to the projection optical apparatus and the first projection exposure apparatus of the present invention, the light beams emitted from the two viewpoints or the two viewpoints of the two projection optical systems or the two rows of projection optical systems can be applied to the second object by, for example, a beam transfer member. The upper side is transported in the opposite direction along the first direction. Further, according to the second projection exposure apparatus of the present invention, in order to form the two projection optical systems to form an inverted magnified image in the scanning direction, the light beams emitted from the two viewpoints of the two projection optical systems can be on the second object. Transfer in the opposite direction along the scanning direction. Therefore, the image of each pattern region on the first object projected by the two projection optical systems or the two-row projection optical system can be easily joined to the second object, and the pattern transfer can be performed satisfactorily.

Further, when viewed in the second direction, the beam transfer amount of the first beam transfer member and the beam transfer amount of the second beam transfer member at least partially overlap, and the field of view of the first line of the projection optical system is observed from the second direction. The amount of beam transfer to the image field at least partially overlaps with the field-to-image beam transfer amount of the second-line projection optical system, the phenomenon indicating the first projection optical system and the second projection optical system, and the first line of projection optics The system and the second-row projection optical system are nested, whereby the size of the projection optical device can be reduced as a whole, and image vibration caused by interference such as device vibration can be reduced.

Further, by adjusting the amount of overlap of the amount of transfer of the light beam or the like, the first direction (scanning direction) of each pattern region on the first object projected by the two projection optical systems or the two-row projection optical system can be adjusted. The positional offset (offset) is reached between the scanning distance of the second object and the scanning exposure

balance. Therefore, by setting the offset to 0, the size of the platform for the first object can be reduced, and the pattern can be formed with higher precision, and by shortening the scanning distance, it can be reduced for use. The size of the base portion of the platform of the second object can shorten the exposure time and increase the throughput.

Further, according to the photomask of the present invention, the image of the pattern of the first row pattern portion and the second row pattern portion can be projected by the first projection optical system and the second projection optical system of the projection optical device of the present invention. Therefore, the projection optical device can be used.

[First Embodiment]

Hereinafter, a first embodiment of the present invention will be described with reference to Figs. 1 to 12 .

Fig. 1 shows a schematic configuration of an illumination device and a mask platform of a step-and-scan type projection type exposure apparatus according to a first embodiment, and Fig. 2 shows a schematic configuration of a projection optical device and a substrate stage of the projection exposure apparatus. In FIGS. 1 and 2, the projection exposure apparatus includes a driving mechanism (not shown) such as an illumination device IU, a mask platform MSTG, a projection optical device PL, a substrate platform PSTG, a linear motor, and a control system ( Not shown) and so on. Wherein the illumination device IU illuminates the pattern of the mask MA (first object) by the illumination light from the light source, the mask platform MSTG holds and moves the mask MA, and the projection optical device PL patterns the mask MA The magnified image is projected onto a board (substrate) PT (second object) that holds and moves the board PT, the linear motor (linear A drive mechanism such as motor drives the mask platform MSTG and the substrate platform PSTG, and the control system controls the operation of the drive mechanism and the like in a unified manner. In addition, as an example of the plate PT of this example, for example, 1.9 m × 2.2 m square, 2.2 m × 2.4 m square, 2.4 m × 2.8 coated with a photoresist (photosensitive material) for producing a liquid crystal display element. m square, or rectangular flat glass plate of 2.8 m × 3.2 m square. Further, as an example, as shown in FIG. 2, the surface of the plate PT is divided into two pattern transfer regions EPA and EPB to which the pattern of the mask MA is transferred. Further, as the plate PT, a ceramic substrate for manufacturing a thin film magnetic head, a circular semiconductor wafer for manufacturing a semiconductor element, or the like can be used.

In the illumination device IU of FIG. 1, for example, a light beam emitted from a light source 1 composed of an ultrahigh pressure mercury lamp light source is reflected by an elliptical mirror 2 and a dichroic mirror 3, and then incident on a collimated lens. 4. The wavelength band of the light including the g-ray (wavelength 436 nm), the h-ray (wavelength 405 nm), and the i-ray (wavelength 365 nm) is obtained by the reflection film of the elliptical mirror 2 and the reflection film of the dichroic mirror 3. The light, and then the light of the wavelength band including the light of the g-ray, the h-ray, and the i-ray, is incident on the collimator lens 4. Further, since the light source 1 is disposed at the first focus position of the elliptical mirror 2, the light of the wavelength band including the light of the g-ray, the h-ray, and the i-ray forms the light source image at the second focus position of the elliptical mirror 2. The divergent light beam from the light source image is converted into a parallel light beam by the collimator lens 4, and then passes through the wavelength selection filter 5 that transmits only the light beam of the predetermined exposure wavelength band.

The illumination light passing through the wavelength selection filter 5 is concentrated by the condensing lens 7 through a neutral density filter 6. The entrance port 8a of the guide fiber 8. Here, the optical fiber 8 is, for example, a random light-guide fiber formed by bundling a plurality of fiber bundles, and has an entrance port 8a and five ejection ports 8b, 8c, 8d, 8e, and 8f. The illumination light incident on the entrance port 8a of the optical fiber 8 propagates inside the optical fiber 8, is divided by the five ejection openings 8b to 8f, and is incident on the five partial illumination optical systems that locally illuminate the mask MA. IL1, IL2, IL3, IL4, IL5.

The illumination light emitted from the emission exits 8b to 8f of the optical fiber 8 is incident on the local illumination optical systems IL1 to IL5, and is converted into a parallel light beam via the collimator lens 9a disposed near the emission exits 8b to 8f, and is incident on the optical An optical integrator is a fly eye lens 9b. Illumination light from a plurality of secondary light sources from the rear focal plane of the fly-eye lens 9b formed in the local illumination optical systems IL1 to IL5 is illuminated by the condensing lens 9c via the condensing lens 9c, respectively, and is variable The light beam of the field stop 9d is substantially uniformly illuminated by the field of view areas OF1, OF2, OF3, OF4, and OF5 on the mask MA via a condenser lens 9e. In addition, in actuality, the illumination area ILF1 of a predetermined shape in the field of view areas OF1 to OF5 defined by the variable field stop 9d is illuminated. However, the following is assumed to be the field of view area OF1 to OF5 of a predetermined shape. Lighting to illustrate.

The light from the field of view areas OF1 to OF5 on the mask MA passes through the first projection optical system PL1 and the second projection optical system PL2 which are telecentric on the mask MA side and the plate PT side of FIG. 2, respectively. 3 projection optical system PL3, fourth projection optical system PL4, and fifth projection optical system PL5, and the image field areas (image field areas) IF1, IF2, IF3, IF4, IF5 on the board PT are exposed. In addition, in actuality, the projection area EF1 and the like which are conjugate with the illumination area ILF1 in the image field areas IF1 to IF5 are exposed. However, the following description is made assuming that the image area IF1 to IF5 are exposed. In this example, the projection optical device PL is constituted by the five projection optical systems (partial projection optical systems) PL1 to PL5, and each of the projection optical systems PL1 to PL5 has a view on the photomask MA (first surface). The patterns in the field regions OF1 to OF5 are enlarged at a common magnification M, and the image regions IF1 to IF5 formed on the surface (second surface) of the plate PT are formed.

The projection optical systems PL1 to PL5 of this example form an inverted image of the pattern of the mask MA on the board PT. Therefore, the magnification M is less than -1, for example, -2.5 (2.5 times). The installation surface of the mask MA of this example is parallel to the installation surface of the board PT. Hereinafter, in the plane parallel to the installation surface of the board PT, the direction along the scanning direction SD of the mask MA and the board PT during scanning exposure is defined as The X axis is defined by defining a direction along the non-scanning direction orthogonal to the scanning direction as the Y axis and a direction perpendicular to the setting surface as the Z axis. At this time, the pattern surface of the mask MA and the surface of the board PT are parallel to the XY plane, the scanning direction of the mask MA and the board PT is the direction along the X axis (X direction), and the non-scanning direction is the direction along the Y axis. (Y direction).

In FIG. 1, the mask MA is adsorbed and held on the mask platform MSTG by a mask holder (not shown). The X-axis moving mirror 50X and the Y-axis moving mirror 50Y are fixed to the mask platform MSTG, and the first laser interferometer is disposed so as to face the X-axis moving mirror 50X and the Y-axis moving mirror 50Y (not shown). Show), the first laser interferometer It is used to measure the position of the mask platform MSTG and send the measurement result to the platform drive system (not shown). Further, in FIG. 2, the plate PT is adsorbed and held on the substrate stage PSTG by a substrate holder (not shown). The X-axis moving mirror 51X and the Y-axis moving mirror 51Y are fixed to the substrate stage PSTG, and the second laser interferometer is disposed so as to face the X-axis moving mirror 51X and the Y-axis moving mirror 51Y. (not shown), the second laser interferometer is used to measure the position of the substrate platform PSTG, and transmits the measurement result to the platform drive system (not shown). The platform driving system controls the position and speed of the mask platform MSTG and the substrate platform PSTG according to the measured values of the first laser interferometer and the second laser interferometer. When the scanning exposure is performed, the mask platform MSTG is driven at the speed VM in the X direction, and in synchronization with this, the substrate platform PSTG is at the speed M in the X direction. The VM (M is the magnification of the projection optical systems PL1 to PL5) is driven. In this example, the magnification M is a negative value, and therefore, the scanning direction of the mask stage MSTG and the scanning direction of the substrate stage PSTG are opposite to each other along the X axis.

Further, the local illumination optical systems IL1, IL3, and IL5 of Fig. 1 described above are arranged to form a first row at a predetermined interval in the Y direction (non-scanning direction), and are provided corresponding to the partial illumination optical systems IL1, IL3, and IL5. Similarly, the projection optical systems PL1, PL3, and PL5 of Fig. 2 are arranged such that the first line is formed in a predetermined arrangement in the Y direction. Further, the local illumination optical systems IL2 and IL4 are arranged to be displaced in the +X direction with respect to the first row so as to form the second row at predetermined intervals in the Y direction, and correspond to the local illumination optical systems IL2 and IL4. Similarly, the projection optical systems PL2 and PL4 are arranged in a predetermined arrangement in the Y direction.

Further, although not shown, an off-axis alignment system for aligning the plate PT is disposed in the vicinity of the first-line projection optical system and the second-row projection optical system. And an autofocus system for measuring the position of the reticle MA and the plate PT in the Z direction (focus position). Similarly, an alignment system (not shown) for aligning the mask MA is disposed on the mask MA. When the overlay exposure is performed on the panel PT, the alignment system is used to make the mask MA. Align with the board PT. Further, based on the measurement result of the autofocus system, the Z-drive mechanism (not shown) is used to control, for example, the position of the mask stage MSTG in the Z direction, whereby the surface of the plate PT and the projection optical systems PL1 to PL5 are imaged. Face focusing.

Next, the configuration and arrangement of the projection optical systems PL1 to PL5 constituting the projection optical device PL of this example will be described in detail. In addition, since the structures of the first-line projection optical systems PL1, PL3, and PL5 are the same, and the structures of the second-row projection optical systems PL2 and PL4 are the same, the following are mainly the first projection optical system PL1 and the second projection optical system PL2. The structure is explained. 3 is a plan view showing the relationship between the field of view areas OF1 to OF5 and the image field areas IF1 to IF5 in a conjugate relationship with respect to the projection optical systems PL1 to PL5 in FIG. 1, and FIG. 4 is a view of the projection optical system viewed from the Y direction. Diagram of PL1, PL2.

In FIG. 3, points (viewpoints) on the optical axes AX11 and AX21 (see FIG. 4) in the field of view areas OF1 and OF2 of the projection optical systems PL1 and PL2 are indicated by points a and b, respectively. Further, the optical axes AX13 and AX23 in the image field regions IF1 and IF2 of the projection optical systems PL1 and PL2 on the plate PT (see the figure) 4) The upper points are indicated by point A and point B, respectively. Point A, point B, and point a, point b are in a conjugate relationship with respect to projection optical systems PL1, PL2. Further, the points a and b may be, for example, the center points of the field of view areas OF1 and OF2. Further, for example, when the center of each of the illumination areas in the field of view areas OF1 and OF2 is not located on the optical axis, the point a and the point b may be the center of the illumination area or the like.

Further, dots (points a, etc.) on the optical axis in the field of view regions OF1, OF3, and OF5 of the first-row projection optical systems PL1, PL3, and PL5 are disposed on a straight line C1 parallel to the non-scanning direction (Y direction). The line C2 in which the points on the optical axis (point b, etc.) in the field of view area OF2 and OF4 of the second-row projection optical systems PL2 and PL4 are connected in parallel with the line C1 parallel to the Y-axis through the point a, and The straight line C1 is spaced apart from the X direction by a predetermined interval LM. The interval LM can be regarded as an interval between the point a in the field of view of the projection optical systems PL1 and PL2 and the point b along the X direction (scanning direction) (hereinafter, also referred to as a spacer distance LM), or can be regarded as The distance between the two projection optical systems PL1, PL2 in the X direction on the mask MA.

Further, the first-line field of view areas OF1, OF3, and OF5 each have a trapezoidal shape having the same shape in which both sides arranged in the Y direction are oblique sides (wherein the difference is in the field of view areas OF1 and OF5 at both ends) The inner side is parallel to the X axis, and the second line of view area OF2 and OF4 has a trapezoidal shape in which the field of view area OF3 is rotated by 180 turns. Further, the field of view regions OF1 to OF5 are not limited to the trapezoidal shape, and may have, for example, an end portion formed in a shape such as a triangle along the Y direction.

In order to form the inverted image of the magnification M by the projection optical systems PL1 to PL5 of this example, the image field regions IF1 to IF5 respectively have the field of view area OF1. ~OF5 is a ladder shape formed by magnification Magnification M (rotated 180 ∘). Therefore, the points on the optical axis (point A, etc.) in the image field regions IF1, IF3, and IF5 of the first-line projection optical systems PL1, PL3, and PL5 are arranged on a straight line C3 parallel to the non-scanning direction (Y direction). The line C4 in which the points on the optical axis (point B, etc.) in the image field regions IF2 and IF4 of the second-row projection optical systems PL2 and PL4 are connected in parallel with the straight line C3 parallel to the Y-axis through the point A, and This line C3 is spaced apart by a predetermined interval LP in the X direction. The interval LP can be regarded as an interval between the point A and the point B in the image field region which is conjugate with the point a and the point b in the field of view of the projection optical systems PL1 and PL2 (hereinafter, also referred to as a plate). The upper separation distance LP) or the interval between the two projection optical systems PL1, PL2 on the board PT along the X direction.

Further, in this example, with respect to the optical axis on the mask MA of the projection optical systems PL1, PL3, and PL5 of the first row, the optical axes on the plate PT are respectively displaced by the displacement in the +X direction, that is, the first deflection direction FD1 ( The transfer amount) is shifted by the CRK 10, and the optical axis on the plate PT is displaced in the -X direction, that is, the second deflection direction FD2, respectively, with respect to the optical axis on the mask MA of the second-line projection optical systems PL2, PL4. CRK20 is displaced. That is, the first yaw direction FD1 and the second yaw direction FD2 are oriented in the opposite directions along the X direction.

As described above, in order to shift the optical axis on the plate PT relative to the optical axis on the reticle MA, that is, to direct the light beam emitted from the field of view point to shift in the X direction relative to the field of view point. The conjugate point on the image field area, in Fig. 4, the projection optical system PL1 (PL2) from the side of the mask MA The first partial optical system SB11 (SB21) having the optical axis AX11 (AX21) parallel to the Z axis and the second partial optical system SB12 (SB22) parallel to the optical axis AX12 (AX22) of the X axis, and The third partial optical system SB13 (SB23) parallel to the optical axis AX13 (AX23) of the Z axis. The three partial optical systems SB11, SB12, and SB13 in the first projection optical system PL1 and the three partial optical systems SB21, SB22, and SB23 in the second projection optical system PL2 respectively constitute an enlargement of the pattern on the mask MA. The image of the magnification M (inverted image) is integrally formed on the primary imaging optical system on the plate PT. Further, in FIG. 4, as an example, the imaging optical system is divided into three partial optical systems SB11, SB12, SB13, etc., but the configuration and arrangement of the imaging optical system can be arbitrarily set. The imaging optical system may be formed by integrally forming an inverted image of the pattern on the mask MA on the plate PT, and an imaging optical system or a catadioptric optical system that forms an even number of intermediate images may be employed.

Further, the projection optical system PL1 (PL2) includes a first mirror FM 1 (FM3) and a second mirror FM2 (FM4), wherein the first mirror FM1 (FM3) is derived from the first partial optical system SB11 (SB21) The light beam is deflected in the first yaw direction FD1 (second yaw direction FD2), and the second mirror FM2 (FM4) deflects the light beam from the second partial optical system SB12 (SB22) in the -Z direction. At this time, in the first projection optical system PL1, the light beams from the point a on the mask MA are placed on the first deflection direction FD1 by the mirrors FM1 and FM2 (first beam transfer members), which are two deflection means. After displacement by the displacement amount CRK10, the beam is transferred to the conjugate point A on the plate PT. Further, in the second projection optical system PL2, The light beams from the point b on the mask MA are displaced by the displacement amount CRK20 in the second deflection direction FD2 by the two deflecting members, that is, the mirrors FM3 and FM4 (second beam transfer member), and then the beam is shifted. Transfer to the conjugate point B on the board PT.

As described above, when the light beam (optical axis) is displaced by the two deflecting members, the degree of freedom in the arrangement of the two deflecting members on the optical paths of the projection optical systems PL1, PL2 is very high, and therefore, can be easily constructed Projection optical systems PL1, PL2. Further, as the deflecting member, prism or the like may be used in addition to a mirror. Further, instead of the two deflecting members, for example, three or more deflecting members may be used in combination to displace the light beam. Further, since the projection optical systems PL1 and PL2 are arranged to be shifted from the Y direction, the projection optical system PL2 may be an optical system formed by rotating the projection optical system PL1 by 180 turns. At this time, the displacement amount CRK1O and the displacement amount CRK20 are the same in the opposite directions.

Next, returning to Fig. 3, the image field regions IF1 to IF5 of the five projection optical systems PL1 to PL5 of the present example are arranged to be continuous in the Y direction because they move relatively in the X direction. On the other hand, in order to project the projection optical systems PL1 to PL5 at a magnification, a predetermined gap is formed along the Y direction between the field of view areas OF1 to OF5 of the projection optical systems PL1 to PL5. Therefore, as shown in FIG. 5(A) and FIG. 1, in the pattern formation region on the mask MA, elongated five pattern regions EM10, EM20 having a length MSL in the X direction are formed at predetermined intervals in the Y direction. , EM30, EM40, EM50. When exposure is performed, the field of view areas OF1 to OF5 of the projection optical systems PL1 to PL5 are in the scanning direction SM1 (-X in the example shown in FIG. 5(A)) The pattern area EM10~EM50 is scanned in the direction). In this example, an inverted image is formed on the plate PT, so that the end portion of the pattern region EM10 (or EM20 or the like) on the mask MA in the +Y direction and the -Y direction of the adjacent pattern region EM20 (or EM30, etc.) The end has the same pattern a1 (or pattern a2, etc.) for repeated exposure.

Further, as shown in FIG. 5(B) and FIG. 2, one pattern transfer area EPA on the board PT can be divided into five groups corresponding to the five image field areas IF1 to IF5 and arranged in the Y direction. The exposure areas EP10, EP20, EP30, EP40, and EP50 are considered, and it is assumed that the boundary portions of the adjacent exposure regions overlap, and the length of each exposure region along the X direction is PSL.

Further, Fig. 12 shows the positional relationship between the mask MA and the sheet PT when the pattern of the mask MA of Fig. 5(A) is exposed on the sheet PT of Fig. 5(B), as shown in Fig. 12(A), when the mask is When the MA moves in the scanning direction SM1 (here, the -X direction), in synchronization with this, the plate PT moves in the scanning direction SP1 (+X direction), whereby the field of view areas OF2 and OF4 start to illuminate the pattern areas EM20 and EM40. The image field IF2, IF4 starts the exposure of the board PT. Thereafter, as shown in FIG. 12(B), when the mask MA moves the distance of the interval LM, the field of view areas OF1, OF3, and OF5 start to illuminate the pattern areas EM10, EM30, and EM50, and the image field areas IF1, IF3, and IF5. When the exposure of the panel PT is started, the images of the pattern regions EM10, EM30, and EM50 and the images of the pattern regions EM20 and EM40 are joined at the same position along the X direction to be exposed.

Thereafter, as shown in FIG. 12(C) and FIG. 12(D), the exposure of the board PT by the image field areas IF2, IF4 ends, and the board PT moves the interval LP. After the distance, the exposure of the pattern PT by the field regions IF1, IF3, and IF5 is completed, thereby forming the inverted image of the pattern of the pattern regions EM10 to EM50 of the mask MA in the Y direction (joining). Exposure to the exposure areas EP10 to EP50 of the board PT. At this time, as shown in FIG. 5(B), the boundary portion A1 (or the boundary portion A2, etc.) of the two adjacent exposure regions EP10, EP20 (or the exposure regions EP20, EP30, etc.) on the plate PT can be made The inverted image of the two patterns a1 (or the pattern a2, etc.) on the mask MA is repeatedly exposed, so that the connection error can be reduced. Further, as shown in FIG. 12(D), in addition to the length PSL (the shortest scanning distance) in the X direction of the pattern transfer area EPA, the length of the interval LP of the two image field areas is also required to be scanned. The interval (on-board spacing distance) LP is also referred to as the idle distance RD.

Further, after FIG. 12(D), the substrate platform is driven to stepwise move the plate PT in the +Y direction, and then the mask MA is scanned in the +X direction with respect to the field of view areas OF1 to OF5, and synchronized with this. The plate PT is scanned at a magnification ratio as a speed ratio in the -X direction, whereby the enlarged image of the pattern of the mask MA is exposed in a joined manner in the next pattern transfer region EPB on the sheet PT.

As described above, in the mask MA of the present example of FIG. 5(A), the pattern regions EM10 to EM50 are formed at the same position in the X direction. However, actually, when the magnification of the projection optical systems PL1 to PL5 is not an equal magnification, it is necessary to consider the point a in the field of view of the projection optical systems PL1 and PL2 of FIG. 3 based on the aspect of exposing the continuous patterns. The interval of point b in the X direction (distance on the reticle) LM, and the point on the board PT and point a, The point b is a relationship between the conjugated point A and the point B in the X direction (the distance between the plates) LP. That is, as shown in FIG. 5(B), in order to expose the pattern continuous in the Y direction to the exposure areas EP10 to EP50 on the board PT, it is necessary to project the optical systems PL1, PL3 in the first line of FIG. The odd-numbered pattern areas EM10, EM30, and EM50 illuminated by the PL5 and the positions of the even-numbered pattern areas EM20 and EM40 illuminated by the second-line projection optical systems PL2 and PL4 in the X direction are set to a predetermined offset (hereinafter referred to as Make a mask offset (MO).

Fig. 13 shows a case of exposure to the mask MA having the above-described mask offset MO. As shown in Fig. 13(A), since the interval LP is small with respect to the interval LM, as shown in Fig. 13(C), in the light A predetermined mask offset MO is provided in the X direction between the odd-numbered pattern regions EM10 and the like on the cover MA and the even-numbered pattern regions EM20 and the like. At this time, the mask MA is scanned in the -X direction, and as shown in FIG. 13(A), the field of view areas OF2, OF4 start to illuminate the pattern areas EM20, EM40, and the exposure of the board PT is started. Thereafter, as shown in FIG. 13(B), when the field of view areas OF1, OF3, and OF5 start to illuminate the pattern areas EM10, EM30, and EM50, the images and patterns of the pattern areas EM10, EM30, and EM50 are formed on the board PT. The image of the area EM20, EM40 is exposed to the same position in the X direction

Thereafter, as shown in FIG. 13(C) and FIG. 13(D), the exposure of the panel PT by the image field regions IF2, IF4 is completed, and after the panel PT is moved by the distance of the interval LP, the image field region IF1 is used. The exposure of the PT3 and IF5 to the board PT is completed, so that the scanning exposure of the board PT is completed. At this time, the idling distance RD (interval LP) of the board PT is shorter than that shown in FIG. That is, the mask The offset MO is approximately inversely proportional to the idling distance RD. By extending the traverse distance RD, the reticle offset MO can be shortened, so that the pattern of the reticle MA can be shortened in the scanning direction, and the reticle platform can be made in the scanning direction. The MSTG is miniaturized, and the pattern of the mask MA can be formed with high precision. On the other hand, by extending the reticle offset MO, the idling distance RD can be shortened, so that the base member of the substrate platform PSTG can be miniaturized in the scanning direction, and the time for one scanning exposure can be shortened, so that the exposure step can be improved. The amount of processing. Therefore, according to the use of the projection exposure apparatus (for example, for a fine pattern or for a rough pattern, etc.), a corresponding balance between the reticle offset distance MO and the idling distance RD is achieved, thereby improving the cost efficiency of the projection exposure apparatus ( Cost performance).

In this example, by setting the relationship between the interval LM (inter-mask distance) LM and the interval (on-board separation distance) LP under predetermined conditions, the reticle offset distance MO and the idling distance RD can be balanced.

That is, in FIG. 4, the displacement amount CRK10 of the light beam (optical axis) of the projection optical system PL1 is also the length along the X direction of the line segment a'A (the first line segment) in which the point a' is connected to the point A. ingredient. This point a' is a point obtained by projecting (orthogonal projection) a point a in the field of view region of the projection optical system PL1 in parallel with the Z-axis, which is formed at a point a. A point on the conjugated plate PT. Similarly, the displacement amount CRK20 of the light beam (optical axis) of the projection optical system PL2 is also the length component of the line segment b'B (second line segment) in which the point b' is connected to the point B along the X direction. This point b' is a point obtained by projecting (orthogonal projection) a point b in the field of view of the projection optical system PL2 in parallel with the Z axis, which is obtained at the point B. It is a point on the board PT that is conjugate with the point b.

In this example, as an example, the line segment a'A and the line segment b'B at least partially overlap each other as viewed from the Y direction (non-scanning direction). This case corresponds to the arrangement of the first-line projection optical systems PL1, PL3, PL5 and the second-row projection optical systems PL2, PL4 of FIG. When viewed from the Z direction, the straight line C1 (first line) passing through the optical axis of the first field of view fields OF1, OF3, and OF5 is in the X direction (scanning direction), and is located in the second field of view area OF2, OF4. The straight line C2 (the second line) of the optical axis is between the line C4 (the fourth line) passing through the optical field of the image field regions IF2 and IF4 conjugated to the field of view, and the second line C2 is at the X line. In the direction (scanning direction), the straight line C1 located in the first line and the straight line C3 (the third line) passing through the optical axes of the image field regions IF1, IF3, and IF5 conjugate with the field of view region arranged along the straight line between.

With the above arrangement, as shown in FIG. 5(B), the exposure regions EP10 and EP20 (or the exposure regions EP10 to EP50) on the sheet PT can be easily exposed in a state where the exposure regions EP10 and EP20 are easily joined in the Y direction, and The interval LP hardly becomes too long (the idling distance RD hardly becomes too long) and is longer than the overlap portion (the reticle offset MO hardly becomes too long). Therefore, it is easy to balance the reticle offset distance MO and the idling distance RD, and by adjusting the interval LP and the interval LM within this range, the reticle offset MO can be shortened or the idling distance can be shortened as needed. RD.

In addition, when viewed from the Y direction, the line segment a'A at least partially overlaps with the line segment b'B (or the line C1 is located between the line C2 and the line C4, and the line C2 is located between the line C1 and the line C3), which means that the projection optics System PL1 The beam transfer direction of PL2 (or the first-line projection optical systems PL1, PL3, PL5 and the second-row projection optical system PL2, PL4) is opposite, and the projection optical system PL1 (or PL1, PL3, PL5) when viewed from the Y direction is The projection optical system PL2 (or PL2, PL4) partially overlaps, that is, the projection optical systems PL1, PL2 (or the projection optical systems PL1 to PL5) are nested. Thereby, the size of the projection optical device PL can be reduced as a whole, and E can reduce image vibration caused by disturbance of device vibration or the like, and the reticle pattern can be transferred onto the plate PT with high precision.

Further, in this example, both the line segment a'A and the line b'B are parallel in the X direction. Thereby, the projection optical systems PL1 and PL2 can simply transfer the light beam in the X direction by the beam transfer member, thereby simplifying the optical system.

Secondly, the relationship between the reticle offset MO and the idling distance RD is obtained more accurately. First, in FIG. 4, the interval (the interval on the reticle) LM, the interval (the distance between the plates) LP, the displacement amount CRK10, and the displacement amount CRK20 have the following relationship. The interval LM is an interval in the X direction between the point a and the point b in the field of view of the projection optical systems PL1 and PL2 on the mask MA, and the interval LP is a board conjugated to the point a and the point b. The distance between the point A and the point B in the X direction on the PT, the displacement amount CRK10 and the displacement amount CRK20 are displacement amounts by which the light beams are displaced by the projection optical systems PL1 and PL2. Further, when the direction from the point B and the point b to the point A and the point a is the +X direction, the sign of the interval LP and the interval LM is positive. Further, when the direction from the point a' and the point b' to the point A and the point B is the +X direction, the signs of the displacement amount CRK10 and the displacement amount CRK20 are positive.

LP=CRK10-CRK20+LM.........(1)

Moreover, in this example, the magnification M of the projection optical systems PL1 and PL2 (the symbol is negative) is used, and the interval LP is set in the following range.

0≦| LP |≦| M×LM |.........(2)

Further, as in the example of FIG. 4, when the interval LP is a positive value, the interval LM is a negative value, and the magnification M is a negative value, the formula (2) can be expressed as follows. Hereinafter, description will be made using the formula (2A).

0≦LP≦M×LM.........(2A)

As shown in FIGS. 5(A) and (B), the length of the scanning direction of the pattern regions EM10 to EM50 of the mask MA (the length when the mask is offset from the MO) MSL, and the exposure regions EP10 to EP50 of the panel PT The lengths of the scanning directions PSL have the following relationship.

PSL=MSL×| M |.........(3)

Moreover, the reticle offset MO shown in FIG. 13(C) is as follows.

MO=LP/M-LM.........(4)

Further, as shown below, the vacancy distance RD of the substrate stage PSTG is equal to the interval LP.

RD=LP.........(5)

The formula (4) is modified as follows.

RD=M×MO+M×LM.........(6)

Since the sign of the magnification M is negative in this example, when the interval LM is a negative value, the relationship between the idling distance RD satisfying the equation (6) and the reticle offset MO is as shown in FIG. 6. In FIG. 6, in the range in which the formula (2A) is established (point B2, range B3, point B4), the idling distance RD and the reticle offset can be made. The MO is inversely proportional, and the idling distance RD and the reticle offset MO are respectively within a predetermined range, so that the idling distance RD and the reticle offset MO are balanced.

Further, at the point B2 (the upper limit value of the equation (2A)) where the following equation is established, the mask offset MO is 0, and the creep distance RD is the interval LP (= M × LM).

LP=M×LM.........(7)

When the interval LP exceeds the range B1 of FIG. 6 (LP>M×LM) of the upper limit value of the formula (2A), the reticle offset MO is generated again, and the idling distance RD also becomes large.

On the other hand, at the point B4 (LP = 0) of Fig. 6 in which the interval LP is the lower limit value of the formula (2A), the idling distance RD is 0, and the reticle offset MO is the interval LM (accurately speaking -LM). Further, when the interval LP exceeds the range B5 (LP<0) of FIG. 6 of the lower limit value of the formula (2A), the idling distance RD is generated again, and the reticle offset MO becomes larger.

Here, with reference to FIG. 7, FIG. 8, FIG. 9, and FIG. 10, the case where the interval LP is the upper limit of the formula (2A) (that is, the point B2 of FIG. 6) and the interval LP are the conditional range will be specifically described. In the case (i.e., the range B3 in Fig. 6), the case where the interval LP is the lower limit value of the formula (2A) (the point B4 in Fig. 6), and the case where the interval LP greatly exceeds the upper limit value of the formula (2A) (ie, range B1 of Figure 6). 7 to 10 show a case where the absolute value of the magnification M of the projection optical systems PL1 and PL2 is used as the speed ratio, the mask MA is scanned in the −X direction, and the plate PT is scanned in the +X direction. For convenience of explanation, The projection optical system PL1 (pattern area EM10) and the projection optical system PL2 (pattern area EM20) are added in the Y direction. Swap, and the interval LM is represented by -LM.

7(A), 8(A), 9(A), and 10(A) show the relationship between the field of view regions OF1 and OF2 of the projection optical systems PL1 and PL2 and the image field regions IF2 and IF2. FIG. 7(B), FIG. 8(B), FIG. 9(B), and FIG. 10(B) show the illumination of the mask MA by the field of view area OF2 at the start of the scanning exposure operation, and by A plan view of a state at which the exposure of the field region IF2 to the board PT is started. In FIG. 9(B), since the image field regions IF1 and IF2 are juxtaposed in the Y direction, illumination of the mask MA by the field of view area OF1 and the board PT by the image field area IF1 are also started. The exposure was carried out.

10(C) is a plan view showing a state in which the illumination of the mask MA by the field of view area OF2 and the exposure of the board PT by the image field area IF2 are completed, and FIG. 7(C) and FIG. (C) and FIG. 10(D) is a plan view showing a state in which the illumination of the mask MA by the field of view area OF1 and the exposure of the board PT by the image field area IF1 are started. 8(D) is a plan view showing a state in which the mask MA is illuminated by the field of view area OF2 and the exposure of the board PT by the image field area IF2 is completed, and FIG. 7(D) and FIG. (E), FIG. 9(B), and FIG. 10(E) show that the illumination of the mask MA by the field of view area OF1 and the exposure of the board PT by the image field area IF1 are completed, and the scanning exposure operation ends. The plan view of the state after.

As can be seen from Fig. 7(D), when the interval LP is the upper limit value (M × LM), the mask regions EM10 and EM20 of the mask MA do not have the mask offset lMO. Therefore, the size of the reticle platform MSTG can be reduced. Again, above The scanning exposure operation shown in FIGS. 12(A) to (D) corresponds to FIG. 7.

Next, as is clear from FIG. 8(E), when the interval LP is within the above range, the reticle offset distance MO is generated in each of the pattern regions EM10 and EM20 of the mask MA, but the vacancy distance RD of the plate PT becomes short. Therefore, the size of the base portion of the substrate platform PSTG can be reduced, and the amount of processing can be increased. Furthermore, since the present invention is based on the magnification ratio, for the rate control of the platform speed, instead of using the mask platform MSTG having a smaller pattern, a substrate platform PSTG capable of projecting a magnified image is used. . Therefore, the throughput is increased by shortening the idle distance RD of the substrate platform PSTG. Further, the scanning exposure operation shown in FIGS. 13(A) to (D) described above corresponds to FIG. 8.

Further, as can be seen from Fig. 9(C), when the interval LP is the lower limit value (i.e., RD = LP = 0), although each of the pattern regions EM10 and EM20 of the mask MA generates a mask offset MO, the plate can be made. The traverse distance RD of the PT is zero. Therefore, the effect of increasing the throughput can be maximized.

Further, as is clear from FIG. 10(D), when the interval LP greatly exceeds the upper limit value of the above conditional expression (ie, LP>>M×LM), the reticle offset is generated in each of the pattern regions EM10 and EM20 of the mask MA. MO, so that the size of the mask cannot be reduced, and the traverse distance RD of the board PT also becomes long, so that the throughput cannot be increased.

Next, the effect of downsizing the size of the mask of the present embodiment will be described with reference to Fig. 11 .

First, FIG. 11(A) shows the previous equal-multiple projection multi-projection optical system. A diagram showing the positional relationship of the mask MA, the plate PT, and the seven projection optical systems PLA1 to PLA7. The lateral magnification of the scanning direction (X direction) of each of the projection optical systems PLE1 to PLE7 of FIG. 11(A) is +1, and the horizontal magnification of the non-scanning direction (Y direction) is also +1.

In addition, FIG. 11(B) is a view showing a positional relationship between the mask MA, the plate PT, and the projection optical systems PL1 to PL5 when the projection optical systems PL1 to PL5 that are nested are used in the present embodiment. In the arrangement of FIG. 11(B), when the magnification of the projection optical systems PL1 to PL5 is M, the separation distance LM on the reticle and the separation distance LP on the plate satisfy the relationship of LM × M = LP. In the configuration of Fig. 11(B), since the projection optical system has a magnification as compared with the case of Fig. 11(A), the mask pattern can be reduced. Therefore, the size of the reticle stage can be greatly reduced, and the error of the reticle pattern (drawing error, etc.) can be reduced. Further, since the projection optical systems PL1 to PL5 of FIG. 11(B) are nested, for example, the projection optical systems PL1 to PL5 are arranged in a non-nested manner (the projection optical systems PL1 and PL2 do not overlap when viewed from the Y direction). In the case of the configuration, the size of the projection optical system can be reduced as a whole. The horizontal magnification of the scanning direction of each of the projection optical systems PL1 to PL5 in FIG. 11(B) is a negative value (M[<-1), and the horizontal magnification in the non-scanning direction is also a negative value (M<-1). However, as described in detail in the modification, the lateral magnification of the projection optical systems PL1 to PL5 in the non-scanning direction may be a positive value (M>1).

Moreover, FIG. 11(C) shows a case where the fields of view of the respective projection optical systems PL1 to PL5 are closely arranged in the non-scanning direction as compared with the arrangement shown in FIG. 11(B). That is, each projection optical system PL1 shown in FIG. 11(C) In the case of ~PL5, the projection optical system in the non-scanning direction of the center of the field of view and the projection optical system in the non-scanning direction of the image field center are shifted from each other except for the central projection optical system PL3. With the above configuration, the mask size can also be reduced in the non-scanning direction.

Further, although the projection optical device PL of FIG. 1 of the above embodiment is constituted by five projection optical systems PL1 to PL5, the projection optical device PL may have at least two projection optical systems (partial projection optical systems), for example, projection optics. System PL1, PL2.

[Second Embodiment]

Next, a second embodiment of the present invention will be described with reference to Figs. 14 to 20 . The stage system of the scanning type projection exposure apparatus used in the second embodiment is the same as the stage system of the first embodiment, but the projection optical system of the second embodiment is similar to the projection optical apparatus PL shown in Fig. 2 of the first embodiment. The displacement direction and the displacement amount of the light beam (optical axis) of the projection optical systems PL1 to PL5 are different. In the following, the same reference numerals will be given to the portions corresponding to those in FIGS. 1 to 5 in FIGS. 14 to 20, and the detailed description will be simplified.

In the projection optical device PLA of the second embodiment shown in FIG. 14(A) to FIG. 14(C), FIG. 14(A) is a plan view showing the arrangement of the plurality of pattern regions EM10 to EM50 on the mask MA. 14(B) is a plan view showing the arrangement of the plurality of projection optical systems PL1 to PL5, and FIG. 14(C) is a plan view showing the arrangement of the plurality of exposure regions EP10 to EP50 formed on the plate PT.

In the projection optical device PLA of Fig. 14, and Fig. 3 (first implementation) The projection optical system of the aspect is different in that the field of view of each of the projection optical systems PL1 to PL5 is closely arranged in a direction intersecting with the scanning direction (X direction). The projection optical device PLA of FIG. 14(B) includes five projection optical systems PL1 to PL5, and each of the projection optical systems PL1 to PL5 includes a first partial optical system SB11 to SB51, a second partial optical system (not shown), and a first 3 local optical systems SB13~SB53, and two deflection members (not shown).

The field of view of the first projection optical system PL1 is aligned with the pattern area EM10 on the mask MA along the non-scanning direction (Y direction). The light from the pattern region EM10 passes through the first partial optical system SB11 of the first projection optical system PL1, and is transmitted to the first deflection direction FD1 by the first deflection member (not shown), and then passes through the second portion (not shown). The optical system and the second deflecting member pass through the third partial optical system SB13. The light passing through the third partial optical system SB13 reaches a part of the exposure area EP10 on the board PT.

Similarly, the fields of view of the second projection optical system to the fifth projection optical systems PL2 to PL5 are aligned with the pattern regions EM20 to EM50 along the non-scanning direction. The light from the pattern regions EM20 to EM50 is respectively emitted by the first partial optical systems SB21 to SB51 of the second projection optical system to the fifth projection optical systems PL2 to PL5 by a first deflecting member (not shown). The second yaw direction to the fifth yaw direction FD2 to FD5 are transmitted through the third partial optical systems SB23 to SB53 via the second partial optical system and the second deflecting member (not shown). The light reaching the board PT via the third partial optical systems SB23 to SB53, respectively Part of the exposure area EP20~EP50.

Here, the third deflection direction FD3 of the third projection optical system PL3 located at the center in the non-scanning direction coincides with the scanning direction, and the second projection optical system PL2 on both sides of the third projection optical system PL3 in the non-scanning direction 4 The second deflection direction FD2 and the fourth deflection direction FD4 of the projection optical system PL4 are biased toward the non-scanning direction side. In the non-scanning direction, the second projection optical system PL2 and the first projection optical system PL1 on the outside of the fourth projection optical system PL4 and the fifth deflection optical field PL5 in the first deflection direction FD1 and the fifth deflection direction FD5 are compared. The second deflection direction FD2 and the fourth deflection direction FD4 are more shifted toward the non-scanning direction side.

That is, the third deflection direction FD3 has only a vector component along the scanning direction, and the second deflection direction FD2 and the fourth deflection direction FD4 have vector components along the scanning direction and the non-scanning direction. Further, the first deflection direction FD1 and the fifth deflection direction FD5 have vector components along the scanning direction and the non-scanning direction, and the vector components along the non-scanning direction are larger than the second deflection direction FD2 and the fourth deflection direction FD4. Vector component.

In other words, in the projection optical systems PL1 to PL5 of FIG. 14(B), the arrangement on the side of the board PT is the same as that of the above-described FIG. 3 (the first embodiment), but the arrangement on the side of the mask MA is in the non-scanning direction. Closer. With the above configuration, the mask size can also be reduced in the direction intersecting the scanning direction.

In the embodiment of Fig. 14, when the X-direction component of the distance between the first deflecting member and the second deflecting member is considered, the conditional expression (1) and the conditional expression (2A) of the first embodiment are also satisfied. In addition, in FIG. 14(B), the state of "LP=M*LM" is shown.

Further, in the arrangement of Fig. 14(B), when viewed in the Z direction, the straight line C1 is disposed between the straight line C2 and the straight line C4, and the straight line C2 is disposed between the straight line C1 and the straight line C3, wherein the straight line C1 passes the first The optical axis in the field of view of the projection optical systems PL1, PL2, and PL3 passes through the optical axis in the field of view of the second-line projection optical systems PL2 and PL4, and the straight line C4 passes through the line along the line C2. The field is an optical axis within the conjugate image field that passes through the optical axis within the image field that is conjugate with the field of view along the line C1. With this nested configuration, the projection optical device PLA can be miniaturized.

Furthermore, in the above embodiment, it is disclosed that the fields of view (field of view) and the image field (image field) of the plurality of projection optical systems (PL1 to PL5, etc.) constituting the projection optical system are located on the optical axis of the projection optical system. Above, an example of the so-called on axis case, but the field of view and the image field of the projection optical system may also deviate from the optical axis of the projection optical system, so-called off-axis.

Here, for comparison, in FIGS. 15(A) to 15(C), as shown in FIGS. 8(A) to (E), coaxial projection optics usable when having a reticle offset MO is shown. Device PLB. The projection optical device PLB of Fig. 15(B) is composed of five coaxial projection optical systems PL1 to PL5 whose optical axes are located at the center of the field of view and the image field, and the mask MA of Fig. 15(A) has a mask offset of MO. The images of the patterns of the pattern regions EM10 to EM50 are projected onto the exposure regions EP10 to EP50 on the plate PT of Fig. 15(C) via the projection optical systems PL1 to PL5.

16(A) and 16(B) show the projection optical device PLB of FIGS. 15(A) to 15(C) repeatedly, and FIGS. 16(C) and 16(D) show the same mask. Off-axis projection optics that can be used with offset MO Device PLC. That is, the centers of the field of view and the image field of the five projection optical systems PL1 to PL5 constituting the projection optical device PLC of FIG. 16(A) are displaced from the optical axis in the X direction, respectively, but the pattern on the mask MA is applied. The function projected on the board PT is the same as that of the projection optical apparatus PLB of Fig. 16(A).

Compared with the projection optical device PLB of FIG. 16(A) (FIG. 15(B)), in the projection optical device PLC of FIG. 16(C), the image fields of the respective projection optical systems PL1 to PL5 are set to the scanning direction. In the (X direction), the displacement is performed on each field of view side. Thereby, the distance (the board spacing distance) LP between the image fields in the scanning direction is shorter than the state shown in FIG. 16(A), so that the idling distance RD can be shortened, and thus the example of FIG. 16(A) can be obtained. Achieve higher throughput than to achieve.

Further, in each of the above-described embodiments, a case has been described in which a plurality of projection optical systems (such as PL1 to PL5) are refracting optical systems of one-time imaging (a type in which an intermediate image is not formed), but the projection optical system is not limited to one time. Imaging, and is not limited to refractive optical systems.

17 shows a first projection optical system PL1 according to the first modification, and FIG. 17 shows only the second projection optical system adjacent to the first projection optical system PL1 in the non-scanning direction (Y direction). The optical axes AX21 and AX23 are shown.

The first projection optical system PL1 in the first modification is a catadioptric optical system that performs secondary imaging (a type in which one intermediate image is formed), and the lateral magnification M in the scanning direction is a negative value (M<-1), and is not in the scanning direction. The horizontal magnification M is a positive value (M>1). In other words, in the first projection optical system PL1 in the first modification, a part of the pattern region on the mask MA is formed to be enlarged and inverted. Like (zoom in inverted image).

The first projection optical system PL1 of Fig. 17 includes a first imaging optical system that forms the intermediate image IM1, and a second imaging optical system that images the intermediate image IM1 on the plate PT again. The first imaging optical system includes a first group G11, a second group G12, and a third group G13, wherein the first group G11 is disposed along an optical axis AX11 extending in a direction normal to the mask MA surface, and the second group The group G12 includes an amplitude split type or a polarization split type beam splitter BS and a concave mirror CM1, and the third group G13 is orthogonal to the optical axis AX11 and extends along an optical axis AX12 extending in parallel with the scanning direction (X direction). And configuration. Further, the second imaging optical system includes a fourth group G14, an optical path refraction mirror FL11, and a fifth group G15, wherein the fourth group G14 is disposed along the optical axis AX12 for bending the optical axis AX12 On the other hand, the optical axis AX13 is disposed along the optical axis AX13 which is parallel to the optical axis AX11 and extends in parallel with the normal direction of the plate PT.

Further, a field stop FS1 is disposed at an intermediate image forming position between the first imaging optical system and the second imaging optical system. In the first modification, the field of view region on the mask MA and the image field on the plate PT are defined by the field stop FS1. Therefore, when the projection optical systems PL1, PL2 and the like of the first modification are used, the variable illumination field 9d and the condensing lens 9e in the illumination device IU of Fig. 1 can be omitted for specifying the illumination area. Optical system such as ILF1. This case is also the same in the modification of FIGS. 18 and 19 described below. The field of view region and the image field in the first modification of FIG. 17 are defined to include the optical axes AX11 and AX13 (having a coaxial field of view and an image field), but may be The field of view and the image field are shifted from the optical axes AX11 and AX13 to have an off-axis field of view and an image field.

Further, in the first modification, the optical path separating surface of the dichroic mirror BS corresponds to the first deflecting member, and the Schmidt FL11 corresponds to the second deflecting member. Further, an extending direction of the optical axis AX12 connecting the splitting mirrors BS and the optical path refractors FL11 corresponds to the first deflecting direction.

Further, in the first modification, when the magnification of the projection optical system is M, the distance LM (corresponding to the distance in the X direction of the optical axes AX11 and AX21) and the distance LP (corresponding to the optical axes AX13 and AX23) The distance in the X direction satisfies the relationship of LP=M×LM. The distance LM is a distance in the X direction between the first projection optical system PL1 on the mask MA and the second projection optical system, and the distance LP is the first projection optical system PL1 and the second projection optical on the plate PT. The distance between the systems along the X direction. However, this setting can be changed within a range satisfying 0 ≦ LP ≦ M × LM.

FIG. 18(A) is a view showing the first projection optical system PL1 of the second modification from the Y direction (non-scanning direction), and FIG. 18(B) is a plan view showing the field of view and the image field of the second modification. In the second projection optical system adjacent to the first projection optical system PL1 in the non-scanning direction (Y direction), only the optical axes AX21 and AX23 of the second projection optical system are shown in Fig. 18(A). . Further, in Fig. 18(B), only the first projection optical system PL1 and the second projection optical system PL2 are shown.

The first projection optical system PL1 in the second modification of FIG. 18(A) is a catadioptric optical system for secondary imaging (a type of forming an intermediate image) The first projection optical system PL1 is different from the first modification of FIG. 17 in that an optical path refractor FL11 is provided to separate the reciprocating optical path formed by the concave mirror by the method of dividing the field of view. In the first projection optical system PL1 in the second modification, the lateral magnification M in the scanning direction is a negative value (M<-1), and the lateral magnification M in the non-scanning direction is a positive value (M>1). In other words, the first projection optical system PL1 of the second modification forms a part of the pattern area on the mask MA to enlarge the inverted inside image (enlarged inverted image).

The first projection optical system PL1 of Fig. 18(A) includes a first imaging optical system that forms the intermediate image IM1, and a second imaging optical system that images the intermediate image IM1 on the plate PT again. The first imaging optical system includes a first group G11, a second group G12, a third group G13, and an optical path refractor FL11, wherein the first group G11 is along the optical axis AX11 extending in the normal direction of the mask MA surface. In the second group G12, the third group G12 is disposed along an optical axis AX12 that is orthogonal to the optical axis AX11 and extends parallel to the scanning direction (X direction). The optical path refractor FL11 is disposed on the second group G13. In the optical path between the two groups G12 and the third group G13, the optical axis AX11 is bent to become the optical axis AX12. Further, the second imaging optical system includes a fourth group G14, an optical path refraction mirror FL12, and a fifth group G15, wherein the fourth group G14 is disposed along the optical axis AX12, and the fifth group G15 is parallel to the optical axis AX11. It is disposed on the optical axis AX13 extending in parallel with the normal direction of the plate PT.

Further, a field stop FS1 is disposed at an intermediate image forming position between the first imaging optical system and the second imaging optical system. In the second modification,

The field of view on the mask MA and the image field on the plate PT are also defined by the field stop FS1. The field of view region and the image field of the second modification are off-axis fields of view and image fields that are offset from the optical axes AX11 and AX13.

Further, in the second modification, the optical path refractors FL11 correspond to the first deflecting members, and the optical path refractors FL12 correspond to the second deflecting members. Further, the extending direction of the optical axis AX12 connecting the optical path refractors FL11 and FL12 corresponds to the first yaw direction.

Further, in the second modification, as shown in FIG. 18(B), when the magnification of the projection optical systems PL1 and PL2 is M, the distance LM and the distance LP satisfy the relationship of LP=M×LM, wherein the distance LM It is the distance along the X direction between the center of the field of view area OF1 of the first projection optical system PL1 on the mask MA and the center of the field of view area OF2 of the second projection optical system PL2. This distance LP is the distance in the -X direction between the center of the image field IF1 of the first projection optical system PL1 on the board PT and the center of the image field IF 2 of the second projection optical system PL2. However, this setting can be changed within a range satisfying 0 ≦ LP ≦ M × LM. Further, the conjugate point of the center of the field of view area OF1 of the first projection optical system PL1 is the center of the image field IF1, and the conjugate point of the center of the field of view area OF2 of the second projection optical system PL2 is the center of the image field IF2. .

19(A) is a view showing the first projection optical system PL1 of the third modification from the Y direction (non-scanning direction), and FIG. 19(B) is a plan view showing the field of view and the image field of the third modification. The projection optical system PL1 of the third modification shown in FIG. 19(A) differs from the second modification of FIG. 18 only in that the optical path refractors FL11 are arranged such that the light beams are horizontal. The optical axis AX11 is reflected by the mode, and the other structures are the same as those of the second modification. By changing the arrangement of the optical path refractors FL11, the first projection optical system PL1 (FIG. 18(B)) of the second modification is placed on the outside of the optical axes AX11 and AX13 in the scanning direction (X direction). The area OF1 and the image field IF1 are located inside the optical axes AX11 and AX13, respectively. Similarly, in the second projection optical system PL2, the field of view area OF2 and the image field IF2 are also located inside the optical axes AX21 and AX23, respectively.

In the third modification, as shown in FIG. 19(B), when the magnification of the projection optical systems PL1 and PL2 is M, the distance LM and the distance LP are set to satisfy 0≦LP≦M×LM, where the distance LM The distance in the X direction between the center of the field of view area OF1 of the first projection optical system PL1 on the mask MA and the center of the field of view area OF2 of the second projection optical system PL2, which is the distance on the board PT The distance in the X direction between the center of the image field IF1 of the first projection optical system PL1 and the center of the image field IF2 of the second projection optical system PL2. In particular, in the third modification, the field of view areas OF1 and OF2 and the image fields IF1 and IF2 are located inside the optical axes AX11, AX13, AX21, and AX23 in the scanning direction, so that the conditional expression (0≦LP≦) can be performed. The setting of the lower limit of M × LM) makes it possible to make the processing amount higher than the processing amount of the second modification. Further, in the third modification, the conjugate point at the center of the field of view area OF1 of the first projection optical system PL1 is the center of the image field IF1, and the center of the field of view area OF2 of the second projection optical system PL2. The conjugate point is the center of the image field IF2.

Further, in the above embodiment, as shown in FIG. 1, one of the five pattern regions EM10 to EM50 is formed on the mask platform MSTG. Sheet reticle MA. On the other hand, as shown in the modification of FIG. 20 with the same reference numerals in the portions corresponding to those in FIG. 1, the five masks MA1 to MA5 are respectively adsorbed via a mask holder (not shown). Holding and patterning the pattern regions EM10 to EM50 of FIG. 1 respectively on the masks MA1 to MA5, the five masks MA1 to MA5 are arranged on the mask platform at predetermined intervals along the Y direction (non-scanning direction). On the MSTG, it extends in an elongated shape in the X direction (scanning direction).

The patterns of the masks MA1 to MA5 of the modification of FIG. 20 are respectively projected onto the board PT via the projection optical systems PL1 to PL5 of FIG. 2, and in this state, the mask platform MSTG and the substrate platform are synchronously scanned in the X direction. The PSTG thereby transfers the patterns of the masks MA1 to MA5 to the plate PT, respectively.

[Third embodiment]

Next, a third embodiment of the present invention will be described with reference to Figs. 21 to 24 . In the third embodiment, an example of a method of manufacturing a photomask (for example, the mask MA of FIG. 1) in which a pattern is transferred by the projection optical device PL of the above-described embodiment will be described.

Fig. 21 is a view for conceptually explaining the positional relationship between the mask pattern of the embodiment of Figs. 1 and 2 and the pattern transferred onto the board. In FIG. 21, the mask MA1 is provided with a first line pattern area EM10 and a second line pattern area EM20 which are formed to be spaced apart from each other in the non-scanning direction (Y direction). The pattern regions EM10 and EM20 have lengths in the longitudinal direction along the scanning direction (X direction).

And, the first row pattern area EM10 has the first pattern area RP10 And the common pattern region RP10 having a length in the longitudinal direction along the scanning direction, the common pattern region RPc being adjacent to the first pattern region RP10 in the non-scanning direction. Further, the second row pattern region EM20 has a second pattern region RP20 having a length in the longitudinal direction along the scanning direction, and a common pattern region RPc in the non-scanning direction. The second pattern regions RP20 are adjacent to each other.

Here, the patterns formed in the first row pattern region EM10 and the second row pattern region EM20 of FIG. 21 are transferred onto the plate PT by the first projection optical system PL1 and the second projection optical system PL2, respectively. 1 exposure area EP10 and second exposure area EP20. The first exposure region EP10 and the second exposure region EP20 are partially overlapped in the non-scanning direction.

Here, as described in the above embodiment, the projection optical systems PL1 and PL2 have a negative magnification in the scanning direction and a negative magnification in the non-scanning direction. Therefore, the pattern in the first pattern region RP10 of the first row pattern region EM10 and the pattern in the second pattern region RP20 of the second row pattern region EM20 can be obtained by respectively, that is, the pattern to be transferred The non-scanning direction is reversed as the axis of symmetry, and the scanning direction is reversed as the axis of symmetry. Further, the common pattern region RPc of the two pattern regions EM10 and EM20 includes a pattern obtained by reversing the pattern of the region where the exposure regions EP10 and EP20 on the panel PT overlap with the non-scanning direction as the axis of symmetry. And reversed with the scanning direction as the axis of symmetry.

Next, referring to FIG. 22(A) to FIG. 22(D), the mask of FIG. 21 is applied. The manufacturing method of MA1 will be described.

Fig. 22 (A) is a plan view showing the original pattern OPA corresponding to the pattern transferred on the sheet PT of Fig. 21 . Here, the original pattern OPA is not limited to a pattern similar to the pattern transferred onto the board PT, but may be, for example, a pattern that has been subjected to an OPC (Optical Proximity Correction) process for correcting an optical proximity effect. .

First, the original pattern OPA is divided into a plurality of regions PA1, PA2, and PAC arranged in the non-scanning direction by the dividing lines DL1 and DL2 in accordance with the size and shape of the image field of the projection optical systems PL1 and PL2 to be used. Here, the first area PA1 corresponds to a region projected onto the board PT only by the projection optical system PL1, and the second area PA2 corresponds to a region projected onto the board PT only by the projection optical system PL2. Further, the common area PAC corresponds to a region that is superimposed and exposed on the board PT by both the first projection optical system PL1 and the second projection optical system PL2.

Next, as shown in FIG. 22(B), the original pattern data including the first pattern data PD1 located in the first area PA1 and the original pattern data located in the common area PAC, that is, the common pattern data are extracted from the original pattern data. The pattern data of the PDC, and the pattern information of the original pattern data, that is, the second pattern data PD2 located in the second area PA2, and the original pattern data in the common area PAC, that is, the common pattern data PDC, are extracted from the original pattern data. .

Then, as shown in FIG. 22(C), the extracted pattern data is reduced based on the reciprocal of the magnifications of the first projection optical system PL1 and the second projection optical system PL2. In this example, due to the first projection optical system PL1 The second projection optical system PL2 has a negative magnification in the scanning direction and a negative magnification in the non-scanning direction, so that the first pattern data PD1, the second pattern data PD2, and the common pattern data PDC are scanned, respectively. The direction is reversed as the axis, and the non-scanning direction is reversed as the axis, whereby the reduced pattern data is changed into the first reverse pattern data RPD1, the second reverse pattern data RPD2, and the common inverted pattern data. RPDc.

Then, the first pattern region RP10 and the second pattern region are drawn on the mask MA1 by using the mask plotter based on the first reverse pattern data RPD1, the second reverse pattern data RPD2, and the common reverse pattern data RPDc. The RP 20 and the common pattern region RPc form a first row pattern region EM10 and a second row pattern region EM20. A plan view of the reticle MA depicted is as shown in Fig. 22(D). In addition, FIG. 22(D) is a plan view of the mask viewed from the side of the pattern surface of the mask MA1, that is, on the side of the projection optical system of the mask MA1.

Next, an example of the reticle pattern and the method of manufacturing the same will be described with reference to FIGS. 23 and 24 when the projection optical system has a negative magnification in the scanning direction and a positive magnification in the non-scanning direction.

Here, the mask MA2 of FIG. 23 is different from the mask MA1 of FIG. 21 in that the patterns in the two rows of pattern regions EM10 and EM20 of the mask MA2 of FIG. 23 are respectively by the pattern region EM10 of FIG. And the pattern in the EM 20 is obtained by inverting the axis parallel to the scanning direction. Therefore, as shown in FIGS. 24(B) and 24(C), compared with the method of manufacturing the mask MA1 shown in FIGS. 22(A) to 22(D), The manufacturing method shown in Figs. 24(A) to 24(D) of the mask MA2 of Fig. 23 differs only in that the first pattern data PD1, the second pattern data PD2, and the common pattern data PDC are respectively The non-scanning direction is reversed as an axis, thereby obtaining the first inversion pattern data RPD1, the second inversion pattern data RPD2, and the common inversion pattern data RPDc. The other manufacturing methods are the same as those of the example shown in FIG. 22, and thus the description thereof will be omitted.

Furthermore, in the example shown in FIGS. 21 to 24, the method of manufacturing the mask when the two projection optical systems PL1 and PL2 are used is described. However, when the number of projection optical systems is three or more, it is also possible to The mask material is generated in the same manner to manufacture the mask MA and the like having the pattern regions EM10 to EM50 of Fig. 1 .

Further, as described in the above embodiment (for example, the mask MA of FIG. 8), when there is a mask offset MO, the first line pattern area EM10 of FIG. 22(D) is made according to the amount of the mask offset MO. The entire area may be shifted from the entire area of the second line pattern and the area EM20 in the scanning direction.

Next, by using the scanning type projection exposure apparatus using the projection optical apparatus PL of Fig. 1 in the above embodiment, a predetermined pattern (a circuit pattern, an electrode pattern, or the like) is formed on a photosensitive substrate (glass plate), and it can also be obtained as a micro component. (micro device) liquid crystal display element. Hereinafter, an example of the manufacturing method will be described with reference to the flowchart of Fig. 25 .

In step S401 (pattern forming step) of FIG. 25, first, a coating step, an exposure step, and a development step of applying a photoresist on the substrate to be exposed to prepare the photosensitive substrate, the exposure step is Light for a liquid crystal display element using the above-described scanning type projection exposure apparatus The cover pattern is transferred and exposed on the photosensitive substrate, and the developing step is to develop the photosensitive substrate. A predetermined photoresist pattern is formed on the substrate by a photolithography step including the coating step, the exposing step, and the developing step. After the photolithography step, a predetermined pattern including a plurality of electrodes or the like is formed on the substrate via an etching step using the photoresist pattern as a mask, a photoresist stripping step, and the like. This photolithography step or the like is performed a plurality of times depending on the number of layers on the substrate.

In the next step S402 (color filter forming step), a plurality of sets of three fine filters corresponding to red R, green G, and blue B are arranged in a matrix, or are arranged in the horizontal scanning line direction. A plurality of sets of three strip filters of red R, green G, and blue B, thereby forming a color filter. In the next step S403 (unit assembly step), a liquid crystal panel is manufactured by injecting liquid crystal between, for example, a substrate having a predetermined pattern obtained by the step S401 and a color filter obtained by the step S402. ).

In the subsequent step S404 (module assembly step), a liquid crystal panel (liquid crystal cell) assembled as described above is mounted with a circuit for performing a display operation of the liquid crystal panel, and a backlight and the like. The fabrication of the liquid crystal display element is completed. According to the method for fabricating a liquid crystal display device described above, by using the scanning type projection exposure apparatus that shortens the mask pattern in the scanning direction of the above embodiment, the size of the mask platform can be reduced, and the projector can be used at a lower cost and with higher precision. The mask pattern is used to manufacture high precision liquid crystal display elements. Moreover, by using the projection exposure apparatus which has shortened the idling distance, the substrate platform can be downsized, and the liquid crystal display element can be manufactured at low cost and high throughput.

Further, the present invention is not limited to the above embodiments, and various configurations can be employed without departing from the gist of the invention.

[Industrial availability]

According to the element manufacturing method of the present invention, by performing exposure using the projection optical device of the present invention in the exposure step, the projection image formed on the second object by the plurality of (multi-row) projection optical systems can be accurately placed. Bonding to achieve good pattern transfer. Moreover, the projection optical system having the magnification can be downsized by the nested arrangement, and the image vibration can be reduced, so that a large-area micro-element can be manufactured at low cost and with high precision.

Further, if necessary, the pattern on the first object (mask or the like) can be shortened in the scanning direction, or the scanning distance of the second object (plate or the like) can be shortened. Therefore, in the former case, the pattern can be manufactured with high precision, and the size of the platform for the first object can be reduced. On the other hand, in the latter case, since the size of the base portion of the stage for the second object can be reduced and the amount of processing can be increased, the micro-component can be manufactured with high manufacturing cost and high precision.

1‧‧‧Light source

2‧‧‧Elliptical mirror

3‧‧‧ dichroic mirror

4, 9a‧‧ ‧ collimating lens

5‧‧‧Wavelength Selection Filter

6‧‧‧Neutral density filter

7, 9c‧‧ ‧ condenser lens

8‧‧‧Optical fiber

8a‧‧‧Inlet port

8b~8f‧‧‧shots

9b‧‧‧Future eye lens

9d‧‧‧Variable field diaphragm

9e‧‧‧ Condenser lens

50X, 51X‧‧‧X-axis moving mirror

50Y, 51Y‧‧‧Y-axis moving mirror

A‧‧‧1st point of view

B‧‧‧2nd point of view

A'‧‧‧ point a orthogonal projection point on the plate PT

B'‧‧‧ point b orthogonal projection point on the plate PT

A‧‧‧1st conjugate point

B‧‧‧2nd conjugate point

A1, a2‧‧‧ pattern

A1, A2‧‧ Demarcation Department

AX11, AX12, AX13, AX21, AX22, AX23‧‧‧ optical axis

B1, B2, B3, B5‧‧‧ range

B4‧‧ points

BS‧‧‧beam splitter

C1, C2, C3, C4‧‧‧ straight line

CM1‧‧‧ concave mirror

CRK10, CRK20‧‧‧ displacement

DL1, DL2‧‧‧ dividing line

EF1‧‧‧projection area

EM10~EM50‧‧‧ pattern area

EP10~EP50‧‧‧Exposure area

EPA, EPB‧‧‧ pattern transfer area

FD1‧‧‧1st deflection direction

FD2‧‧‧2nd deflection direction

FD3‧‧‧3rd deflection direction

FD4‧‧‧4th deflection direction

FD5‧‧‧5th deflection direction

FL11, FL12‧‧‧ optical path refractor

FM1‧‧‧1st mirror

FM2‧‧‧2nd mirror

FM3‧‧‧3rd mirror

FM4‧‧‧4th mirror

FS1‧‧ ‧ field diaphragm

G11‧‧‧Group 1

G12‧‧‧Group 2

Group G13‧‧‧

G14‧‧‧Group 4

G15‧‧‧Group 5

IM1‧‧‧ intermediate image

IF1~IF5‧‧‧image field (image field)

IL1~IL5‧‧‧Local illumination optical system

ILF1‧‧‧Lighting area

IU‧‧‧Lighting device

LM, -LM‧‧ ‧ Interval of field of view (separation distance on reticle)

LP(RD)‧‧‧Interval of image field (separation distance on board)

M‧‧‧ horizontal magnification

MA, MA1~MA5‧‧‧Photo Mask

MO‧‧‧Photomask offset

MSTG‧‧‧mask platform

Length of the pattern area of the MSL‧‧‧ reticle along the X direction

OF1~OF5‧‧‧Field of view

0PA‧‧‧ original pattern

PA1, PA2, PAC‧‧‧ areas

PD1‧‧‧1st pattern data

PD2‧‧‧2nd pattern data

PDC‧‧‧Common pattern data

PL, PLA, PLB, PLC‧‧‧ projection optical device

PL1~PL5, PLE1~PLE7‧‧‧ projection optical system

PSL‧‧‧ Length of each exposed area along the X direction

PSTG‧‧‧Base Platform

PT‧‧‧ board

RP10‧‧‧1st pattern area

RP20‧‧‧2nd pattern area

RPc‧‧‧Common pattern area

RPD1‧‧‧1st reverse pattern data

RPD2‧‧‧2nd reverse pattern data

RPDc‧‧‧Common reversal pattern data

SB11~SB51‧‧‧1st partial optical system

SB12, SB22‧‧‧2nd partial optical system

SB13~SB53‧‧‧3rd partial optical system

SD, SM1, SP1‧‧‧ scan direction

S401~S404‧‧‧ flowchart symbol

Fig. 1 is a perspective view showing an illumination device and a mask platform of the projection exposure apparatus according to the first embodiment.

Fig. 2 is a perspective view showing a projection optical system and a substrate stage according to the first embodiment;

Fig. 3 is a view showing the relationship between the field of view areas OF1 to OF5 and the image field areas IF1 to IF5 of the first embodiment.

Figure 4 is a view showing the structure of the projection optical systems PL1, PL2 of Figure 2; Figure.

Fig. 5(A) is a plan view showing the mask MA of Fig. 1, and Fig. 5(B) is a plan view showing the board PT of Fig. 2.

Fig. 6 is a view showing the relationship between the reticle offset distance MO and the idling distance RD in the first embodiment.

FIG. 7 is a view showing an example of scanning exposure corresponding to point B2 of FIG. 6.

FIG. 8 is a view showing an example of scanning exposure corresponding to the range 3 of FIG. 6.

FIG. 9 is a view showing an example of scanning exposure corresponding to point B4 of FIG. 6.

FIG. 10 is a view showing an example of scanning exposure corresponding to the range B1 of FIG. 6.

11(A) is a view showing a state in which exposure is performed using a plurality of projection optical systems of equal magnification, and FIG. 11(B) is a view showing a state in which exposure is performed using a plurality of projection optical systems according to the first embodiment, and FIG. (C) is a view showing an exposure method which can shorten the mask in the non-scanning direction.

(A) to (D) of FIG. 12 are diagrams showing changes in the positional relationship between the mask MA and the sheet PT at the time of scanning exposure in the first embodiment.

FIGS. 13(A) to 13(D) are diagrams showing changes in the positional relationship between the mask MA and the plate PT when scanning and exposing the mask having a predetermined mask offset MO.

14(A) to 14(C) are diagrams showing the positional relationship between the projection optical device PLA, the photomask, and the panel of the second embodiment.

15(A) to 15(C) are diagrams showing the positional relationship of the coaxial projection optical device PLB, the photomask, and the plate which can be used when the reticle offset is MO.

16(A) is a plan view showing the projection optical device PLB and the photomask MA of FIG. 15, FIG. 16(B) is a plan view showing the plate PT shown in FIG. 15, and FIG. 16(C) is a view showing the off-axis projection optical device. Fig. 16(D) is a view showing a panel exposed by a projection optical device PLC.

FIG. 17 is a view showing a first modification of the projection optical system PL1.

18(A) is a view showing a second modification of the projection optical system PL1, and FIG. 18(B) is a plan view showing a field of view region and an image field in the second modification.

19(A) is a view showing a third modification of the projection optical system PL1, and FIG. 19(B) is a plan view showing a field of view region and an image field in the third modification.

Fig. 20 is a perspective view showing an embodiment in which a plurality of masks are placed on the light-cover platform MSTG of Fig. 1;

21 is a perspective view showing a state in which a mask pattern is transferred onto a board via a projection optical system in the third embodiment.

22(A) to 22(D) are diagrams showing an example of a method of manufacturing the reticle of Fig. 21.

Fig. 23 is a perspective view showing a state in which another mask pattern is transferred onto a board via another projection optical system in the third embodiment.

24(A) to (D) are diagrams showing an example of a method of manufacturing the mask of Fig. 23.

FIG. 25 is a flowchart showing an example of a manufacturing procedure of a liquid crystal display element using the projection exposure apparatus of the embodiment.

A‧‧‧1st point of view

A'‧‧‧ point a orthogonal projection point on the plate PT

B‧‧‧2nd point of view

B'‧‧‧ point b orthogonal projection point on the plate PT

A‧‧‧1st conjugate point

B‧‧‧2nd conjugate point

AX11, AX12, AX13, AX21, AX22, AX23‧‧‧ optical axis

CRK10, CRK20‧‧‧ displacement

FD1‧‧‧1st deflection direction

FD2‧‧‧2nd deflection direction

FM1~FM4‧‧·Mirror

LM‧‧‧ distance

LP (RD) ‧ ‧ interval

MA‧‧‧Photo Mask

PL1, PL2‧‧‧ projection optical system

PT‧‧‧ board

SB11, SB21‧‧‧1st partial optical system

SB12, SB22‧‧‧2nd partial optical system

SB13, SB23‧‧‧3rd partial optical system

SM1, SP1‧‧‧ scan direction

Claims (34)

A projection optical device in which an enlarged image of a first object disposed in a first surface is formed on a second object, and the second object is disposed so as to be relatively movable in a predetermined first direction with respect to the enlarged image In the second surface, the projection optical device includes: a first projection optical system that guides a light beam emitted from a predetermined first viewpoint on the first surface to the second surface corresponding to the first viewpoint a first conjugate point on the first object, wherein the enlarged image of the first object in the first surface is formed on the second object in the second surface; and the second projection optical system defines the first surface The light beam emitted from the second viewpoint is guided to the second conjugate point on the second surface corresponding to the second viewpoint, and the enlarged image of the first object in the first surface is formed in the second surface The first projection optical system includes a first light beam transfer member that shifts a light beam from the first viewpoint to a direction of at least the first direction with respect to the first viewpoint. The beam is transferred to the first conjugate point, and the second projection optics The second beam transfer unit includes a beam that is displaced from the second viewpoint in a direction of at least the first direction with respect to the second viewpoint, and transfers the beam to the second conjugate point. The first viewpoint is connected to the first projection point orthogonally projected onto the second surface and the first line segment of the first conjugate point, and the second viewpoint is connected to the second projection orthogonally projected to the second surface. Projection point and the above 2nd The second line segment of the conjugate point overlaps at least a part of the second surface from the second direction orthogonal to the first direction. The projection optical device according to claim 1, further comprising a third projection optical system that guides a light beam emitted from a predetermined third viewpoint on the first surface to the third point corresponding to the third viewpoint a third conjugate point on the second surface, and an enlarged image of the first object in the first surface is formed on the second object in the second surface; and a fourth projection optical system is provided on the first surface The light beam emitted from the predetermined fourth viewpoint is guided to the fourth conjugate point on the second surface corresponding to the fourth viewpoint, and the enlarged image of the first object in the first surface is formed in the second The third projection optical system includes a third beam transfer member that displaces the light beam from the third viewpoint in a direction at least in the first direction with respect to the third viewpoint. And transmitting the light beam to the third conjugate point, wherein the fourth projection optical system includes a fourth beam transfer member for causing the light beam from the fourth viewpoint to be at least in the direction of the first direction with respect to the fourth viewpoint Produce a displacement on the beam and transfer the beam to the upper 4 conjugate point. The projection optical device according to claim 2, wherein the first projection optical system, the second projection optical system, the third projection optical system, and the fourth projection optical system are disposed along the second direction. The projection optical device according to claim 1, wherein at least one of the first light beam transfer member of the first projection optical system and the second light beam transfer member of the second projection optical system is configured to correspond to The light beam of the above-described viewpoint is displaced in the second direction with respect to the viewpoint, and is transferred to the corresponding conjugate point. The projection optical device according to claim 4, wherein at least one of the first line segment and the second line segment is parallel to the first direction. The projection optical device according to Item 4 or 5, wherein at least one of the first line segment and the second line segment is not parallel to the first direction and the second direction. The projection optical device according to claim 4, wherein the first light beam transfer member transfers the light beam from the first viewpoint to a first yaw direction parallel to the first line segment, and the second light beam transfer The component transfers the light beam from the second viewpoint to the second yaw direction parallel to the second line segment. The projection optical device according to claim 7, wherein the first beam transfer member includes: a first deflecting member that bends a light beam from the first viewpoint toward the first deflecting direction; and a second deflecting member And deflecting the light beam along the first yaw direction toward the second surface; and the second beam transfer member includes: a third deflecting member that bends the light beam from the second viewpoint toward the second yaw direction ; and 4th The deflecting member deflects the light beam along the second deflecting direction toward the second surface. The projection optical device according to claim 8, wherein the first projection optical system includes: a first partial optical system disposed in an optical path between the first surface and the first deflecting member; and a second portion An optical system disposed in an optical path between the first deflecting member and the second deflecting member; and a third partial optical system disposed in an optical path between the second deflecting member and the second surface; The projection optical system includes: a fourth partial optical system disposed in an optical path between the first surface and the third deflecting member; and a fifth partial optical system disposed in the third deflecting member and the fourth deflecting member And a sixth partial optical system disposed in the optical path between the fourth deflecting member and the second surface. The projection optical device according to claim 4, wherein the magnification between the first projection optical system and the second projection optical system is M, and the first viewpoint and the second viewpoint are along When the interval in the first direction is LM, and the interval between the first conjugate point and the second conjugate point along the first direction is LP, the first projection optical system and the second projection optical are The system satisfies the following conditional formula: 0≦| LP |≦| M×LM |. The projection optical device according to claim 10, wherein the magnification M, the interval LM, and the interval LP are satisfied. The following conditional formula: LP = M × LM. The projection optical device according to claim 4, wherein the first pattern region and the second pattern region are provided on the first surface, and are projected by the first projection optical system and the second projection optical system a pattern is formed on the second object in the second surface, and the first pattern region and the second pattern region are arranged at a predetermined interval in the second direction orthogonal to the first direction, and along the first The first exposed area and the second exposed area are disposed on the second surface, and the pattern on the first object is formed by the first projection optical system and the second projection optical system. In the area to be projected, the first exposed area and the second exposed area are arranged to be closely connected or partially overlapped in the second direction, and are disposed at the same position along the first direction. The projection optical device according to claim 3, wherein the beam transfer amount of the third beam transfer member is smaller than the beam transfer amount of the first beam transfer member. The projection optical device according to claim 1, wherein the first projection optical system and the second projection optical system are image side telecentric optical systems. The projection optical device according to claim 14, wherein the first projection optical system and the second projection optical system are object-side telecentric optical systems. The projection optical device according to claim 1, wherein the magnification of the first projection optical system and the second projection optical system in the first direction is less than -1. The projection optical device according to claim 2 or 3, further comprising: a first row of projection optical systems, comprising a plurality of projection optical systems, the plurality of projection optical systems being the first along the second direction Each of the first and third projection optical systems is a part of the first-line projection optical system; and the second-line projection optical system includes a plurality of projection optical systems, the plurality of projection optical systems Each of the third and fourth projection optical systems is a part of the first line of projection optical systems along the second line different from the first line in the second direction; and the first line of projections The optical system forms a plurality of image fields conjugate with the plurality of fields of view of the projection optical system of the first row, on a third line in the second surface, and the second line of projection optical systems In the second line of the projection optical system, the plurality of image fields in which the plurality of fields of view are conjugated are formed on the fourth line in the second surface, and the first line to the fourth line are observed from the second direction. When the first line above is located on the second line and above Between the fourth row, the second row is located between the first row and the third row. A projection exposure apparatus that exposes a second object by illumination light via a first object, the projection exposure apparatus comprising: The illumination optical system is configured to illuminate the first object by the illumination light, and the projection optical device according to any one of claims 1 to 17, wherein the image of the first object illuminated by the illumination optical system is formed on The second object and the platform mechanism move the first object and the second object in a scanning direction parallel to the first direction by using a magnification ratio of the projection optical device as a speed ratio. The projection exposure apparatus according to claim 18, wherein the first projection optical system and the second projection optical system have the magnification in the scanning direction being less than -1. The projection exposure apparatus of claim 19, comprising: a first row of projection optical systems, comprising a plurality of projection optical systems, the plurality of projection optical systems being non-scanned along a direction orthogonal to the scanning direction The first row of the direction has a field of view; and the second row of projection optical systems includes a plurality of projection optical systems, the plurality of projection optical systems having a second row different from the first row along the non-scanning direction Each of the projection optical systems has a plurality of image fields conjugate with the plurality of fields of view of the projection optical system of the first row, and is formed in the third row in the second surface. Further, in the second-line projection optical system, a plurality of image fields conjugate with the plurality of fields of view of the second-line projection optical system are formed in the second In the fourth row in the plane, when the first row to the fourth row are viewed from the second direction, the first row is located between the second row and the fourth row, and the second row is located at the fourth row. Between one line and the third line, the plurality of projection optical systems of the first-line projection optical system include the first projection optical system, and the plurality of projection optical systems of the second-row projection optical system include the above The second projection optical system. The projection exposure apparatus according to claim 18, wherein the platform mechanism includes a mask platform for holding a photomask, and the first pattern region and the second pattern region are integrally formed on the mask, the first pattern In the region and the second pattern region, a pattern projected onto the second object in the second surface by the first projection optical system and the second projection optical system is formed. The projection exposure apparatus according to claim 18, wherein the platform mechanism includes a mask platform for holding the first mask and the second mask, and the first mask is formed with a first pattern region. A pattern projected onto the second object in the second surface by the first projection optical system is formed in the first pattern region, and the second mask region is formed in the second mask region, and the second pattern region is formed in the second pattern region. A pattern projected onto the second object in the second surface by the second projection optical system is formed. An exposure method in which illumination light is passed through a first object to make a second The object exposure method includes the steps of: illuminating the first object with the illumination light; and applying the image of the first object to be illuminated to any one of items 1 to 17 of the patent application scope The projection optical device according to the item is projected onto the second object; and the first object and the second object are relatively moved in the first direction by using the magnification ratio of the projection optical device as a speed ratio. A component manufacturing method, comprising: an exposing step of exposing a mask pattern to a photosensitive substrate using a projection exposure apparatus according to any one of claims 18 to 22; The developing step develops the photosensitive substrate exposed by the exposure step. A reticle that is projected onto the second object in the second surface as a projection optical device according to any one of claims 1 to 17 The reticle is characterized in that: the reticle includes a first row pattern portion and a second row pattern portion which are formed to be spaced apart from each other in a direction corresponding to the second direction on the reticle, The one-line pattern portion includes a first inversion pattern which is a portion of the original pattern corresponding to the pattern transferred onto the second object, that is, a pattern in the first original pattern region, and The second party above The axis parallel to the corresponding direction is formed by inverting the axis of symmetry. The second row pattern portion includes a second inversion pattern, and the second inversion pattern is a second original pattern different from the first original pattern region. The pattern in the region is formed by inverting an axis parallel to the direction corresponding to the second direction as an axis of symmetry, and the first row pattern portion and the second row pattern portion have a common inversion pattern, and the common inversion pattern The original pattern in the common region between the first original pattern region and the second original pattern region is formed by inverting an axis parallel to the direction corresponding to the second direction as a symmetry axis. The photomask of claim 25, wherein the first line pattern portion is transferred onto the second object by the first projection optical system, and the second line pattern portion is by the (2) The projection optical system is transferred to the second object, and the common inversion pattern of the first row pattern portion and the common inversion pattern of the second row pattern portion are superimposed on the second object and projected. The photomask according to claim 26, wherein the first row pattern portion and the second row pattern portion correspond to the second portion between the first projection optical system and the second projection optical system The intervals of the directions are spaced apart from each other. The photomask according to any one of claims 25 to 27, wherein the common inversion pattern is provided in the pattern portion of the first row and the A region on the opposite side of the two-line pattern portion and a region on the opposite side of the pattern pattern portion in the second row. The photomask according to any one of claims 25 to 27, wherein the common inversion pattern is provided in a region on the side of the second row pattern portion of the pattern portion of the first row, and the second portion A region on the side of the pattern portion of the first row of the row pattern portion. The photomask according to any one of claims 25 to 27, wherein the entire region of the first row pattern portion is disposed in a direction corresponding to the first direction and the second row The entire area of the pattern portion is staggered. A reticle manufacturing method for manufacturing a reticle according to any one of claims 25 to 30, comprising the steps of: preparing the original pattern; and extracting the first pattern data and the second pattern And the common pattern data, wherein the first pattern data is a part of the original pattern, that is, a material of the original pattern in the first original pattern area, and the second pattern data is different from the first original pattern area. a material of the original pattern in the original pattern region, wherein the common pattern material is data of the original pattern located in a common pattern region between the first original pattern region and the second original pattern region; and the first pattern data is The second pattern data and the common pattern data are inverted by the first direction as an axis of symmetry, thereby obtaining the first inverted pattern data, the second inverted pattern data, and the common inverse And rotating the pattern data; and drawing the first reverse pattern data and the common reverse pattern data on a first region of the mask; and drawing the second reverse pattern data and the common reverse pattern data on the light The second region on the cover forms the first row pattern portion and the second row pattern portion. A reticle that is projected onto the second object in the second surface as a projection optical device according to any one of claims 1 to 17 The reticle is characterized in that the reticle includes a first row pattern portion and a second row pattern portion which are formed to be spaced apart from each other in a direction corresponding to the second direction on the reticle. In the first projection optical system, the first line pattern portion is transferred to the first transfer region on the second object, and the second line pattern portion is transferred to the second line by the second projection optical system. The second transfer region on the second object partially overlaps in the second direction on the second object, and along the center of the first transfer region in the second direction and the center of the second transfer region The distance between them is different from the distance between the center of the first row pattern portion and the center of the second row pattern portion in the direction corresponding to the second direction. The photomask according to claim 32, wherein the distance between the center of the first row pattern portion and the center of the second row pattern portion in a direction corresponding to the second direction is Shorter than the above-described first transfer region along the second direction The above distance between the center and the center of the second transfer region. The photomask of claim 32, wherein the direction corresponding to the second direction and the second direction are parallel to each other.