HK1163822B - Reflective, refractive and projecting optical system; scanning exposure device; and method of manufacturing micro device - Google Patents

Abstract

The present invention relates to a reflective refractive projection optical system, which forms an enlarged image of a first object arranged on a first surface on a second object arranged on a second surface. The characteristic of the reflective refractive projection optical system is that it includes a beam transmission part, where light emitted from the first surface and traveling in a direction orthogonal to the first surface is transmitted in the first direction along the first surface, and the light transmitted in the first direction is guided to the second surface in a direction orthogonal to the first surface.

Description

Catadioptric projection optical system, scanning exposure apparatus, and method for manufacturing micro-device

The present application is a divisional application entitled "projection optical system, scanning exposure apparatus, and method for manufacturing micro device" filed on 2007, 23.02/2007 as original application No. 200780009672.7.

Technical Field

The present invention relates to a catadioptric projection optical system that projects an image of a 1 st object (mask, reticle, or the like) onto a 2 nd object (substrate, or the like), a catadioptric optical apparatus that projects and exposes the image of the 1 st object onto the 2 nd object, a scanning exposure apparatus, and a method for manufacturing a micro device using the scanning exposure apparatus.

Background

For example, in the manufacture of semiconductor devices, liquid crystal display devices, and the like, a projection exposure apparatus is used which projects a pattern of a mask (e.g., reticle, photomask) onto a plate (e.g., glass plate or semiconductor wafer) coated with a resist (resist) by using a projection optical system. Conventionally, a projection exposure apparatus (stepper) has been used in many cases, which collectively exposes the patterns of the respective masks to the respective exposure shot (shot) regions on the board in a step and repeat (step and repeat) manner. In recent years, a Step-and-scan (Step and scan) type projection exposure apparatus has been proposed, which instead of using 1 large projection optical system, arranges a plurality of small partial projection optical systems having equal magnifications at predetermined intervals along a scanning direction in a plurality of rows, and exposes a pattern of each mask to a plate by each partial projection optical system while scanning the mask and the plate.

In recent years, the size of the board has been increased, and square boards exceeding 2 square meters are used. Here, when the exposure apparatus of the step-and-scan method is used to perform exposure on a large-sized plate, since part of the projection optical system has the same magnification, the mask is also large in size. The flatness of the mask substrate must be maintained, and the larger the size of the mask, the higher the cost. In addition, in order to form a general Thin Film Transistor (TFT) portion, 4 to 5 layers of masks are required, which requires a large cost. Accordingly, a projection exposure apparatus has been proposed in which the size of a mask is reduced by setting the magnification of a projection optical system to a magnification (japanese patent application laid-open No. 11-265848).

In the projection exposure apparatus, the optical axes of the masks of the plurality of projection optical systems and the optical axis of the plate are arranged at substantially the same position. Therefore, there are problems as follows: the patterns scanned and exposed on the board by the projection optical systems of different rows are not connected to each other.

In addition, in order to increase the exposure area in the projection optical system of the projection exposure apparatus, it is necessary to increase the size of the lens constituting the projection optical system, but when the lens is increased in size, the lens is held and thus the optical axis is asymmetrically deformed, or the lens itself is asymmetrically deformed due to gravity.

Disclosure of Invention

The present invention aims to perform a good pattern transfer when an enlarged image of a mask pattern is formed on an object such as a plate by a scanning exposure method using a plurality of projection optical systems. Another object of the present invention is to perform a favorable pattern transfer without generating an asymmetrical deformation of an optical axis in a lens.

According to a 1 st aspect of the present invention, there is provided a catadioptric projection optical system for forming an enlarged image of a 1 st object arranged on a 1 st surface on a 2 nd object arranged on a 2 nd surface, the catadioptric projection optical system comprising: a light beam transmitting unit that transmits light emitted from the 1 st surface and traveling in a direction orthogonal to the 1 st surface in a 1 st direction along the 1 st surface, and guides the light transmitted in the 1 st direction to the 2 nd surface while traveling in the direction orthogonal to the 1 st surface; the light beam transmitting section includes: a 1 st deflecting member that deflects light traveling in a direction orthogonal to the 1 st surface to the 1 st direction; a 2 nd deflecting member for guiding the light traveling in the 1 st direction from the 1 st deflecting member to the 2 nd surface while traveling in a direction orthogonal to the 1 st surface; the catadioptric projection optical system includes: a concave reflecting mirror disposed in an optical path between the 1 st surface and the 2 nd surface; a 1 st lens group disposed in an optical path between the 1 st surface and the concave reflecting mirror; a 2 nd lens group disposed in an optical path between the 1 st lens group and the concave reflecting mirror; and a 3 rd lens group disposed in an optical path between the 2 nd deflecting member and the 2 nd surface and having an optical axis substantially parallel to the optical axis of the 1 st lens group, wherein the 1 st deflecting member is disposed in the optical path between the 2 nd lens group and the 2 nd surface, deflects light from the 2 nd lens group toward the 1 st surface side in a direction orthogonal to the 1 st surface into the 1 st direction, and the 2 nd deflecting member is disposed in the optical path between the 1 st deflecting member and the 2 nd surface, and deflects light traveling from the 1 st deflecting member in the 1 st direction toward the 2 nd surface side in a direction orthogonal to the 1 st surface.

In one embodiment of the present invention, a distance between the 1 st surface and the 2 nd surface is larger than a distance between the 1 st surface and the concave reflecting mirror.

In one embodiment of the present invention, the optical members having refractive power, which constitute the 1 st lens group, the 2 nd lens group, and the 3 rd lens group, are disposed so that the optical axes thereof are parallel to the direction of gravity.

In an aspect of the present invention, the catadioptric projection optical system further includes: an aperture stop disposed in an optical path between the concave mirror and the 2 nd lens group, defining the 2 nd-surface-side numerical aperture of the catadioptric projection optical system, the aperture stop being positioned such that the 1 st surface side and the 2 nd surface side are substantially telecentric.

In one embodiment of the present invention, when the focal length of the 1 st lens group is f1, the focal length of the 3 rd lens group is f3, and the magnification of the projection optical system is β, 0.8 × | β ≦ f3/f1 ≦ 1.25 × | β |, | β | ≧ 1.8 is satisfied.

In one aspect of the present invention, the catadioptric projection optical system includes: and an optical characteristic adjusting mechanism for adjusting the optical characteristics of the catadioptric projection optical system.

In one embodiment of the present invention, the optical characteristic adjustment mechanism is disposed in an optical path between the concave mirror and the 2 nd surface.

In one embodiment of the present invention, the magnified image of the 1 st object formed on the 2 nd surface is a primary image of the 1 st object.

In one embodiment of the present invention, the 1 st deflecting means deflects light traveling in a direction orthogonal to the 1 st surface so as to intersect the optical axis of the 1 st lens group.

According to a 2 nd aspect of the present invention, there is provided a catadioptric optical apparatus comprising: and a 2 nd imaging optical system for optically conjugating the formed intermediate image and the 2 nd object, wherein at least one of the 1 st imaging optical system and the 2 nd imaging optical system is constituted by any one of the catadioptric projection optical systems.

Further, according to a 3 rd aspect of the present invention, there is provided a scanning exposure apparatus, comprising: the scanning exposure apparatus for projection-exposing an image of a 1 st object disposed on a 1 st surface and a 2 nd object disposed on a 2 nd surface onto the 2 nd object by moving the 1 st object and the 2 nd object in synchronization with each other in a scanning direction, includes: the projection optical system comprises a 1 st projection optical device and a 2 nd projection optical device, wherein the 1 st projection optical device is positioned at a 1 st position in the scanning direction, the 2 nd projection optical device is positioned at a 2 nd position different from the 1 st position in the scanning direction, and the 1 st and 2 nd projection optical devices comprise any one of the catadioptric projection optical systems.

In one embodiment of the present invention, the 1 st and 2 nd projection optical devices are: the 1 st and 2 nd projection optical devices are arranged such that the interval between the 2 nd surface sides is larger than the interval between the 1 st surface sides.

In one embodiment of the present invention, the 2 nd object is a photosensitive substrate having an outer diameter of more than 500 mm.

According to a 4 th aspect of the present invention, there is provided a method for manufacturing a micro-component, comprising: exposing the mask pattern on the photosensitive substrate by using the scanning exposure device; and developing the photosensitive substrate with the exposed pattern.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

Fig. 1 is a view showing the configuration of a scanning exposure apparatus according to embodiment 1.

Fig. 2 is a diagram showing the configuration of an illumination optical system and a projection optical system according to embodiment 1.

FIG. 3 is a mask diagram showing a scanning exposure apparatus according to an embodiment.

Fig. 4 is a view showing the field of view and the image field of the projection optical system according to embodiment 1.

Fig. 5 is a diagram showing the configuration of an illumination optical system and a projection optical system according to embodiment 2.

Fig. 6 is a view showing the field of view and the image field of the projection optical system according to embodiment 2.

Fig. 7 is a diagram showing the configuration of an illumination optical system and a projection optical system according to embodiment 3.

Fig. 8 is a diagram showing the configuration of a projection optical system according to embodiment 4.

Fig. 9 is a view showing a field of view and an image field of a projection optical system in a case where an illumination field diaphragm having an arc-shaped aperture in the illumination optical system is disposed.

FIG. 10 is a flowchart for explaining a method of manufacturing a microdevice according to an embodiment.

Fig. 11 is a diagram showing the configuration of a projection optical system according to embodiment 1.

Fig. 12 is an aberration diagram of the projection optical system of embodiment 1.

Fig. 13 is an aberration diagram of the projection optical system of embodiment 1.

Fig. 14 is a diagram showing the configuration of a projection optical system according to embodiment 2.

Fig. 15 is an aberration diagram of the projection optical system of embodiment 2.

Fig. 16 is an aberration diagram of the projection optical system of embodiment 2.

2: an elliptical mirror 3: spectroscope

4. 9b, 9 c: collimator lens 5: wavelength selective filter

6: neutral density filters 7, 11b, 11 c: condensing lens

8: optical fiber 8 a: injection port

8 b-8 h: ejection openings 10b and 10 c: fly-eye lens

12b, 12 c: illumination field aperture 13b, 13 c: imaging optical system

14b, 14 c: 1 st imaging optical system 15b, 15 c: field aperture

16b, 16 c: 2 nd imaging optical system 50: movable mirror

52: the alignment system 54: automatic focusing system

AD1b, AD1 c: 1 st optical characteristic adjusting mechanism

AD2b, AD2 c: no. 2 optical characteristic adjusting mechanism

AD3b, AD3 c: 3 rd optical characteristic adjusting mechanism

AD4b, AD4 c: 4 th optical characteristic adjusting mechanism

ASb: aperture stop Dm, Dp: spacer

CCM, CCMb, CCMc: concave reflector

FM1, FM1b, FM1 c: 1 st deflecting member

FM2, FM2b, FM2 c: no. 2 deflecting member

FM2b, FM2 c: 2 nd optical path deflection surface

G1, G1b, G1 c: 1 st lens group

G2, G2b, G2 c: no. 2 lens group

G3, G3b, G3 c: 3 rd lens group

I1, I2, I3: image fields IL 1-IL 7: partial illumination optical system

IL 3-IL 7: illumination optical system

L10, L16, L18, L20, L26: positive meniscus lens

L11, L12, L14, L17, L21, L22, L24, L27, L28: negative meniscus lens

L13, L19, L23, L29: biconvex lens

L15, L25: biconcave lens M1: light shield

M10-M16: row pattern portion P1: board

PL: projection optical devices PL1 to PL 7: projection optical system

PL10, PL 20: catadioptric optical systems V1, V2, V3: field of view

Beta: projection magnification

Detailed Description

Hereinafter, embodiment 1 of the present invention will be described with reference to the drawings. In the present embodiment, a step-and-scan type scanning projection exposure apparatus will be described by way of example, in which an image of a pattern formed on a mask M1 is scanned and exposed on a plate P1 by synchronously moving the mask M1 and the plate P1 in a scanning direction with respect to a projection optical apparatus PL including a plurality of catadioptric projection optical systems PL1 to PL7, and the plurality of catadioptric projection optical systems PL1 to PL7 partially project a part of the pattern of the mask (1 st object) M1 onto a plate (2 nd object) P1 having an outer diameter of more than 500mm as a photosensitive substrate. Here, the outer shape is greater than 500mm, and means that one side or diagonal is greater than 500 mm.

In the following description, the orthogonal coordinate system shown in fig. 1 is set, and the positional relationship of each member is described with reference to the XYZ orthogonal coordinate system. The XYZ rectangular coordinate system is set such that the X axis and the Y axis are parallel to the plate P1, and the Z axis is set in a direction orthogonal to the plate P1. In the XYZ coordinate system in the figure, the XY plane is set to be substantially parallel to the horizontal plane, and the Z axis is set in the vertical direction. In the present embodiment, the direction in which the plate P1 is moved (scanning direction) is set to the X direction.

Fig. 1 is a perspective view showing a schematic configuration of the entire scanning projection exposure apparatus according to the present embodiment. The scanning projection exposure apparatus of the present embodiment includes a light source including, for example, a super-high pressure mercury lamp (mercury lamp) light source. The light beam emitted from the light source is reflected by an elliptical mirror (elliptical mirror)2 and a dichroic mirror (dichroic mirror)3, and then enters a collimator lens (collimating lenses) 4. That is, the light in the wavelength band (wavelength band) including the light of g-line (wavelength 436nm), h-line (wavelength 405nm), and i-line (wavelength 365nm) is extracted by the reflection film of the elliptical mirror 2 and the reflection film of the spectroscope 3, and the light in the wavelength band including the light of g-line, h-line, and i-line is incident on the collimator lens 4. Since the light source is disposed at the 1 st focal position of the elliptical mirror 2, light having a wavelength band including light of g, h, and i forms a light source image at the 2 nd focal position of the elliptical mirror 2. The divergent light flux from the light source image formed at the 2 nd focal position of the elliptical mirror 2 is converted into parallel light by the collimator lens 4, and passes through the wavelength selective filter 5 through which only light fluxes in a predetermined exposure wavelength band pass.

The light beam passing through the wavelength selective filter 5 passes through a neutral density filter 6 and is condensed at an incident end of an incident port 8a of an optical fiber 8 by a condensing lens 7. Here, the optical fiber 8 is, for example, a random optical fiber in which a plurality of optical fiber cores are randomly connected, and has an injection port 8a and 7 injection ports (hereinafter, injection ports 8b, 8c, 8d, 8e, 8f, 8g, and 8 h). The light flux incident on the entrance 8a of the optical fiber 8 propagates inside the optical fiber 8, is split by 7 exit ports 8b to 8h, and then exits, and enters 7 partial illumination optical systems (hereinafter referred to as partial illumination optical systems IL1, IL2, IL3, IL4, IL5, IL6, and IL7) which partially illuminate the mask M1. The light beams passing through the respective illumination optical systems IL1 to IL7 illuminate the mask M1 substantially uniformly.

Light from the illumination region of the mask M1, that is, the illumination regions corresponding to the partial illumination optical systems IL1 to IL7, is incident on 7 projection optical systems (hereinafter, referred to as projection optical systems PL1, PL2, PL3, PL4, PL5, PL6, and PL7), respectively, and the 7 projection optical systems are arranged so as to correspond to the respective illumination regions, and project an image of a part of the pattern of the mask M1 onto the plate P1, respectively. The light beams passing through the projection optical systems PL1 to PL7 form a pattern image of the mask M1 on the plate P1.

Here, the mask M1 is fixed by a mask holder (not shown) and is placed on a mask stage (not shown). A laser interferometer (not shown) is disposed on the mask stage, and measures and controls the position of the mask stage. The board P1 is fixed by a board holder (not shown) and placed on a board stage (not shown). Further, a movable mirror 50 is provided on the board stage. The laser light emitted from a laser interferometer of an on-board stage, not shown, is incident on the movable mirror 50 or reflected by the movable mirror 50. The position of the plate stage is measured and controlled based on the interference of the incident/reflected laser light.

The partial illumination optical systems IL1, IL3, IL5, and IL7 are arranged at predetermined intervals in the direction orthogonal to the scanning direction and at the rear side (1 st direction side) in the scanning direction as the 1 st row, and the projection optical systems PL1, PL3, PL5, and PL7 provided corresponding to the partial illumination optical systems IL1, IL3, IL5, and IL7 are also arranged at predetermined intervals in the direction orthogonal to the scanning direction and at the rear side (1 st direction side) in the scanning direction as the 1 st row. The partial illumination optical systems IL2, IL4, and IL6 are disposed at predetermined intervals in the direction orthogonal to the scanning direction and on the front side (2 nd direction side) in the scanning direction as the 2 nd row, and the projection optical systems PL2, PL4, and PL6 provided corresponding to the partial illumination optical systems IL2, IL4, and IL6 are also disposed at predetermined intervals in the direction orthogonal to the scanning direction and on the front side (2 nd direction side) in the scanning direction as the 2 nd row.

Here, the line 1 projection optical systems PL1, PL3, PL5, and PL7 have fields of view along the line 1 on the 1 st surface on which the mask M1 is disposed, and form images in image fields (projection regions) having predetermined intervals in the scan orthogonal direction on the line 3 on the 2 nd surface on which the plate P1 is disposed, respectively. The line 2 projection optical systems PL2, PL4, and PL6 each have a field of view along the line 2 on the 1 st surface on which the mask M1 is disposed, and form images in image fields (projection regions) having predetermined intervals in the scan orthogonal direction on the line 4 on the 2 nd surface on which the plate P1 is disposed.

An alignment (alignment) system 52 for aligning the plate P1 between the projection optical system of row 1 and the projection optical system of row 2 is disposed with a deflection axis (off-axis), or an auto-focus system 54 is disposed for aligning the focus (focus) of the mask M1 and the plate P1.

Fig. 2 is a diagram showing the configurations of the partial illumination optical systems IL1 and IL2 and the projection optical systems PL1 and PL 2. The partial illumination optical systems IL3, IL5, and IL7 have the same configuration as the partial illumination optical system IL1, and the partial illumination optical systems IL4 and IL6 have the same configuration as the partial illumination optical system IL 2. The projection optical systems PL3, PL5, and PL7 have the same configuration as the projection optical system PL1, and the projection optical systems PL4 and PL6 have the same configuration as the projection optical system PL 2.

The light flux emitted from the emission port 8b of the optical fiber 8 enters the partial illumination optical system IL1, and the light flux collected by the collimator lens 9b disposed in the vicinity of the emission port 8b enters a fly eye lens (fly eye lens)10b as an optical integrator (optical integrator). The light beams from the plurality of secondary light sources formed on the rear focal plane of the fly-eye lens 10b illuminate the mask M1 substantially uniformly by the condenser lens (condenser lens)11 b. The light flux collected by the collimator lens 9c disposed near the exit 8c enters a fly eye lens 10c as an optical integrator. The light fluxes from the plurality of secondary light sources formed on the rear focal plane of the fly-eye lens 10c illuminate the mask M1 substantially uniformly by the condenser lens 11 c.

The projection optical system PL1 is a catadioptric projection optical system in which a primary image, which is an enlarged image in the field of view on the mask M1, is formed in the image field on the plate P1, and the magnification in the scanning direction (X-axis direction) of the projection optical system PL1 exceeds +1 times and the magnification in the direction orthogonal to the scanning direction is lower than-1.

The projection optical system PL1 includes: a concave reflector CCMb disposed in the optical path between the mask M1 and the plate P1; a 1 st lens group G1b arranged on an optical path between the mask M1 and the concave mirror CCMb; a 2 nd lens group G2b arranged on an optical path between the 1 st lens group G1b and the concave reflecting mirror CCMb; a 1 st deflecting member FM1b disposed in an optical path between the 2 nd lens group G2b and the plate P1, and deflecting light advancing from the 2 nd lens group G2b in the Z-axis negative direction toward the X-axis negative direction (1 st direction) so as to intersect the optical axis of the 1 st lens group G1 b; a 2 nd deflecting member FM2b disposed on the optical path between the 1 st deflecting member FM1b and the plate P1 and deflecting the light advancing from the 1 st deflecting member FM1b in the X-axis negative direction in the Z-axis negative direction; and a 3 rd lens group G3b disposed in the optical path between the 2 nd deflecting member FM2b and the plate P1 and having an optical axis substantially parallel to the optical axis of the 1 st lens group G1 b.

Here, the 1 st deflecting member FM1b and the 2 nd deflecting member FM2b may constitute a 1 st beam transmitting unit that transmits, for example, light advancing from the 2 nd lens group G2b in the Z-axis positive direction to the X-axis negative direction (1 st direction) and then advances the light in the Z-axis negative direction.

Here, in the projection optical system PL1, the concave mirror CCMb, the 1 st lens group G1b, the 2 nd lens group G2b, the 3 rd lens group G3b, the 1 st deflecting member FM1b, and the 2 nd deflecting member FM2b are arranged so that the distance between the mask M1 and the plate P1 is greater than the distance between the mask M1 and the concave mirror CCMb. The optical member having refractive power constituting the 1 st lens group G1b, the 2 nd lens group G2b, and the 3 rd lens group G3b is disposed such that the optical axis thereof is parallel to the direction of gravity. In the projection optical system PL1, the 1 st lens group G1b, the concave reflecting mirror CCMb, and the 3 rd lens group G3b are arranged so that the distance on the plate P1 side is longer than the distance on the mask M1 side.

Further, in an optical path between the concave mirror CCMb and the 2 nd lens group G2b, that is, in the vicinity of the reflection surface of the concave mirror CCMb, an aperture stop (aperture stop) ASb for defining the number of apertures on the plate P1 side of the projection optical system PL1 is provided, and the aperture stop ASb is positioned so that the mask M1 side and the plate P1 side are substantially telecentric (telecentricity). The position of the aperture stop ASb can be regarded as the pupil plane of the projection optical system PL 1.

The projection optical system PL1 satisfies the requirements that the focal length of the 1 st lens group G1b, the focal length of the 3 rd lens group G3b, and the magnification of the projection optical system PL1 in the projection optical system PL1 are respectively f1, f3, and β, respectively

0.8×|β|≤f3/f1≤1.25×|β|

|β|≥1.8。

The projection optical system PL2 has a configuration in which it is arranged symmetrically to the projection optical system PL1 in the scanning direction, and is a catadioptric projection optical system in which a primary image, which is an enlarged image in the field of view on the mask M1, is formed in the image field on the plate P1, similarly to the projection optical system PL1, and the magnification in the scanning direction (X-axis direction) of the projection optical system PL2 exceeds +1 times and the magnification in the scanning orthogonal direction is lower than-1.

The projection optical system PL2 includes a concave mirror CCMc, a 1 st lens group G1c, a 2 nd lens group G2c, a 3 rd lens group G3c, a 1 st deflecting member FM1c, a 2 nd deflecting member FM2b, and an aperture stop ASb, similarly to the projection optical system PL 1.

Here, the 1 st deflecting member FM1c and the 2 nd deflecting member FM2b of the 2 nd projection optical system PL2 may constitute a 2 nd beam transmitter, and the 2 nd beam transmitter may transmit light advancing in the Z-axis positive direction (2 nd direction) from, for example, the 2 nd lens group G2c to the X-axis positive direction and then advance the light in the Z-axis negative direction. The position of the aperture stop ASc can be regarded as a pupil plane of the projection optical system PL 2.

The projection optical system PL1 and the projection optical system PL2 are arranged so as to satisfy the requirement that the distance between the centers of the fields of view of the projection optical system PL1 and the projection optical system PL2 in the scanning direction (X-axis direction) is Dm, the distance between the centers of the fields of view of the projection optical system PL1 and the 2 nd projection optical system PL2 in the scanning direction (X-axis direction) is Dp, and the projection magnification of each of the projection optical system PL1 and the projection optical system PL2 is β

Dp ═ Dm × | β | (where | β | > 1.8).

In this example, the 1 st line (corresponding to the optical axis of the 1 st beam delivery unit in this example) and the 2 nd line (corresponding to the optical axis of the 2 nd beam delivery unit in this example) do not overlap with each other when viewed from the Y direction, the 1 st line being a line connecting the field of view of the 1 st projection optical system PL1 and the image field (projection area), and the 2 nd line being a line connecting the field of view of the 2 nd projection optical system PL2 and the image field (projection area).

Fig. 3 is a diagram showing the structure of a mask M1 used in the scanning exposure apparatus according to the present embodiment. As shown in fig. 3, the mask M1 has row pattern portions M10 to M16 arranged along the non-scanning direction (Y-axis direction). Here, in the line pattern section M10, the field of view of the projection optical system PL1 is positioned, and in the line pattern section M11, the field of view of the projection optical system PL2 is positioned. Similarly, the field of view of the projection optical systems PL3 to PL7 are positioned in the line pattern portions M12 to M16, respectively.

Fig. 4 is a state diagram for explaining the field of view and the image field of the projection optical systems PL1, PL3 arranged as line 1 and the projection optical system PL2 arranged as line 2. The projection optical system PL1 has a field of view V1 and an image field I1, respectively, the projection optical system PL2 has a field of view V2 and an image field I2, respectively, and the projection optical system PL3 has a field of view V3 and an image field I3, respectively. That is, the projection optical system PL1 forms an enlarged image in the field of view V1 on the mask M1 in the image field I1 on the plate P1. Similarly, the projection optical system PL2 forms an enlarged image in the field of view V2 on mask M1 in the field of image I2 on plate P1, and the projection optical system PL3 forms an enlarged image in the field of view V3 on mask M1 in the field of image I3 on plate P1.

Connection portions are formed between the image field I1 of the projection optical system PL1 and the image field I2 of the projection optical system PL2, and between the image field I2 of the projection optical system PL2 and the image field I3 of the projection optical system PL3, respectively, but patterns can be continuously formed on the board P1 by forming the edge portions of the patterns on the mask forming the connection portions in zigzag or the like on the board P1.

In the present embodiment, when the magnification along the scanning direction of the 1 st and 2 nd projection optical systems PL1 and PL2 is β, the interval (interval between the 1 st row and the 2 nd row) Dp between the fields of view of the 1 st and 2 nd projection optical systems PL1 and PL2 and the interval (interval between the 3 rd row and the 4 th row) Dm between the fields of view (projection area) satisfy Dp ═ β × Dm, and therefore, even if the mask M1 is used, it is possible to form patterns continuously on the board P1, and the mask M1 aligns the ends of the respective line pattern portions M11 to M16 in the scanning direction shown in fig. 3 to minimize the size in the scanning direction.

According to the catadioptric projection optical system of the present embodiment, since the optical axes of the 1 st lens group, the 2 nd lens group, and the 3 rd lens group, which are provided with the optical member having refractive power, are arranged so as to be parallel to the gravity direction, it is possible to provide a high-precision catadioptric projection optical system that does not cause asymmetric deformation of the lenses with respect to the optical axes even when the lenses constituting the projection optical system, that is, the lenses constituting the 1 st lens group, the 2 nd lens group, and the 3 rd lens group are increased in size in order to increase the exposure area. Further, according to the catadioptric projection optical system of the embodiment, an intermediate image is not formed, and thus the optical configuration can be simplified.

Further, according to the scanning exposure apparatus of the present invention, since the high-precision catadioptric projection optical system is provided which does not cause asymmetric deformation of the lens with respect to the optical axis, it is possible to perform good exposure. Further, since the catadioptric projection optical system has a magnification, it is possible to avoid an increase in the size of the mask and to reduce the manufacturing cost of the mask.

Next, an illumination optical system and a projection optical system used in the scanning exposure apparatus according to embodiment 2 of the present invention will be described. In the illumination optical system and the projection optical system according to embodiment 2, an illumination field diaphragm is disposed in the illumination optical system of the illumination optical system and the projection optical system according to embodiment 1. The other points have the same configurations as those of the illumination optical system and the projection optical system of embodiment 1. Therefore, in the description of embodiment 2, the detailed description of the same configurations as those of the illumination optical system and the projection optical system of embodiment 1 will be omitted. In the description of the illumination optical system and the projection optical system according to embodiment 2, the same components as those of the illumination optical system and the projection optical system according to embodiment 1 will be described with the same reference numerals as those used in embodiment 1.

Fig. 5 is a diagram showing the configuration of an illumination optical system and a projection optical system according to embodiment 2. In fig. 5, only the illumination optical systems IL1 and IL2 and the projection optical systems PL1 and PL2 are shown, but the illumination optical systems IL3 to IL7 and the projection optical systems PL3 to PL7 have the same configuration. An illumination field diaphragm 12b having a trapezoidal or hexagonal aperture portion is disposed at a position optically conjugate to the mask M1 on the emission side of the condenser lens 11b of the illumination optical system IL1 of the present embodiment, and an imaging optical system 13b is disposed in the optical path between the illumination field diaphragm 12b and the mask M1. Similarly, an illumination field diaphragm 12c is disposed at a position optically conjugate to the mask M1 on the emission side of the condenser lens 11c of the illumination optical system IL2, and an imaging optical system 13c is disposed in the optical path between the illumination field diaphragm 12c and the mask M1.

Fig. 6 is a view for explaining the states of the field of view and the image field of the projection optical systems PL1, PL3 and PL2 when the illumination field diaphragm having the hexagonal aperture portion is disposed in the illumination optical system. The projection optical system PL1 has a hexagonal field of view V1 and an image field I1, respectively, the projection optical system PL2 has a hexagonal field of view V2 and an image field I2, respectively, and the projection optical system PL3 has a hexagonal field of view V3 and an image field I3, respectively. That is, the projection optical system PL1 forms an enlarged image in the field of view V1 on the mask M1, which has a shape defined by the illumination field diaphragm, in the field of view I1 on the plate P1. Similarly, the projection optical system PL2 forms an enlarged image in the field of view V2 on the mask M1, which has a shape defined by the illumination field diaphragm, in the field of view I2 on the plate P1, and the projection optical system PL3 forms an enlarged image in the field of view V3 on the mask M1 in the field of view I3 on the plate P1.

According to the illumination optical system of the present embodiment, it is possible to favorably synthesize a pattern in a non-scanning direction on a board without performing screen synthesis of a mask pattern as in the scanning exposure apparatus of embodiment 1.

Next, an illumination optical system and a projection optical system used in the scanning exposure apparatus according to embodiment 3 of the present invention will be described. The illumination optical system and the projection optical system according to embodiment 3 are modified in the configuration of the projection optical system in the illumination optical system and the projection optical system according to embodiment 1. The other points have the same configurations as those of the illumination optical system and the projection optical system of embodiment 1. Therefore, in the description of embodiment 3, the detailed description of the same configurations as those of the illumination optical system and the projection optical system of embodiment 1 will be omitted. In the description of the illumination optical system and the projection optical system according to embodiment 3, the same components as those of the illumination optical system and the projection optical system according to embodiment 1 will be described with the same reference numerals as those used in embodiment 1.

Fig. 7 is a diagram showing the configuration of the illumination optical system and the projection optical system according to embodiment 3. In fig. 7, only the illumination optical systems IL1 and IL2 and the projection optical systems PL1 and PL2 are shown, but the illumination optical systems IL13 to IL7 and the projection optical systems PL3 to PL7 have the same configuration.

The projection optical systems PL1 and PL2 of the present embodiment are configured by a projection optical apparatus including the 1 st imaging optical systems 14b and 14c that form an intermediate image of the mask M1 and the 2 nd imaging optical systems 16b and 16c that optically conjugate the intermediate image with the plate P1. Here, the magnification of each of the projection optical systems PL1 and PL2 is set so that the magnification in the scanning direction exceeds +1 and the magnification in the scanning orthogonal direction exceeds + 1. That is, the projection optical systems PL1 and PL2 form a 1 st surface normal image (acquired image) on the 2 nd surface according to the magnification.

Further, field stops 15b and 15c are disposed at positions where intermediate images are formed in the optical paths between the 1 st imaging optical systems 14b and 14c and the 2 nd imaging optical systems 16b and 16 c. Here, the 2 nd imaging optical systems 16b and 16c have the same configurations as the projection optical systems PL1 and PL2 of embodiment 1.

According to the projection optical system of the present embodiment, the field stop can be easily arranged, and the field stop can be projected onto the plate with the accuracy of the projection optical system, so that high-accuracy projection can be performed.

Next, a projection optical system used in a scanning exposure apparatus according to embodiment 4 of the present invention will be described. In the projection optical system according to embodiment 4, an optical characteristic adjustment mechanism is provided in the projection optical system according to embodiment 1. The other points have the same configuration as the projection optical system of embodiment 1. Therefore, in the description of embodiment 4, the detailed description of the same configuration as that of the projection optical system of embodiment 1 will be omitted. In the description of the projection optical system according to embodiment 4, the same components as those of the projection optical system according to embodiment 1 will be described with the same reference numerals as those used in embodiment 1.

Fig. 8 is a diagram showing the configuration of a projection optical system according to embodiment 4. In fig. 8, only the projection optical systems PL1 and PL2 are shown, but the projection optical systems PL3 to PL7 also have the same configuration. The projection optical systems PL1 and PL2 have 1 st optical characteristic adjusting mechanisms AD1b and AD1c formed by wedge-shaped double glass in the optical path between the mask M1 and the 1 st lens groups G1b and G1 c. In the 1 st optical characteristic adjusting mechanisms AD1b and AD1c, the focal point or the image plane tilt can be adjusted by changing the glass thickness by moving the double-glazing along the wedge angle. In this way, in the present embodiment, the 1 st optical characteristic adjustment mechanisms AD1b, AD1c are disposed on the optical path on the reduction side of the catadioptric optical system (on the object side of the aperture stop position of the catadioptric optical system), and therefore the amount of change in the optical characteristics with respect to the amount of movement of the adjustment mechanisms can be increased. That is, the sensitivity of the operation of the adjustment mechanism can be made good. Further, the adjustment range of the optical characteristics can be expanded without increasing the stroke range of the adjustment mechanism.

The projection optical systems PL1 and PL2 include 2 nd optical characteristic adjusting mechanisms AD2b and AD2c configured by rotation mechanisms of 2 nd optical path deflecting members FM2b and FM2 c. The 2 nd optical characteristic adjusting mechanisms AD2b, AD2c can adjust the rotation of the image by rotating the prism (prism mirror) having the 2 nd optical path deflecting members FM2b, FM2 c. The optical characteristic adjusting devices AD3b and AD3c are provided, and each of the optical characteristic adjusting devices AD3b and AD3c is configured by 3 lens groups having the same curvature. The 3 rd optical characteristic adjusting mechanisms AD3b and AD3c can adjust the magnification by moving the central lens of the 3 lens groups having the same curvature in the vertical direction (vertical direction) between the mask M1 and the plate P1. The optical characteristic adjusting device includes 4 th optical characteristic adjusting mechanisms AD4b and AD4c formed of parallel flat plates. The 4 th optical characteristic adjusting mechanisms AD4b and AD4c can adjust the image position by tilting the parallel plates with respect to the optical axis.

In the present embodiment, the optical characteristic adjusting mechanisms AD2b, AD2c, AD3b, and AD3c are disposed in the optical paths between the concave mirrors CCMb and CCMc and the 2 nd surface, in other words, the optical path between the pupil surface and the 2 nd surface. This optical path is an optical path on the magnification side in the projection optical system, and therefore, has the following advantages: it is easy to secure a space for disposing the optical characteristic adjustment mechanisms.

In embodiment 2, the illumination field diaphragm having the 6-sided aperture portion is disposed in the illumination optical system, but instead of this, an illumination field diaphragm having an arc shape may be disposed in the illumination optical system. Fig. 9 is a view for explaining states of the field of view and the image field of the projection optical systems PL1 and PL3 and PL2 when an illumination field diaphragm having an arc-shaped aperture portion is disposed in the illumination optical system. The projection optical system PL1 has an arc-shaped field of view V1 and an arc-shaped image field I1, respectively, the projection optical system PL2 has an arc-shaped field of view V2 and an arc-shaped image field I2, respectively, and the projection optical system PL3 has an arc-shaped field of view V3 and an arc-shaped image field I3, respectively. That is, the projection optical system PL1 forms an enlarged image in the circular arc field of view V1 on the mask M1, which has a shape defined by the illumination field diaphragm, in the circular arc image field I1 on the plate P1. Similarly, the projection optical system PL2 forms an enlarged image in the circular arc field of view V2 on the mask M1, which has a shape defined by the illumination field diaphragm, in the circular arc field of view I2 on the plate P1, and the projection optical system PL3 forms an enlarged image in the circular arc field of view V3 on the mask M1 in the circular arc field of view I3 on the plate P1.

In the above-described embodiment 3, the 2 nd imaging optical systems 16b and 16c have the same configurations as the projection optical systems PL1 and PL2 of the embodiment 1, but the 1 st imaging optical systems 14b and 14c, or the 1 st imaging optical systems 14b and 14c and the 2 nd imaging optical systems 16b and 16c may also have the same configurations as the projection optical systems PL1 and PL2 of the embodiment 1.

In the above embodiment, the shape of the image field formed by the projection optical system may be, for example, a trapezoid. When the image field is a trapezoid, it is preferable that the lower side of the trapezoid (the longer side of 2 sides parallel to each other in the trapezoid) is disposed toward the optical axis.

In the above embodiment, a discharge lamp is provided as a light source, and necessary light of g-line (436nm), h-line (405nm), and i-line (365nm) are selected. However, the present invention is not limited thereto, and the present invention can also be applied to light from a light-emitting diode (LED), laser light from a KrF excimer laser (248nm) or ArF excimer laser (193nm), high-frequency harmonic (highher harmonic) of a solid-state laser, or laser light from an ultraviolet semiconductor laser as a solid-state light source.

In the scanning exposure apparatus of the present embodiment, a liquid crystal display device as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, or the like) on a plate (glass substrate). An example of the method in this case will be described below with reference to the flowchart of fig. 10. In fig. 10, in the pattern forming step S401, a so-called photolithography step is performed in which the pattern of the mask is transferred and exposed onto the photosensitive substrate using the scanning exposure apparatus of the present embodiment. By the photolithography step, a predetermined pattern including a plurality of electrodes and the like is formed on the photosensitive substrate. After that, the exposed substrate is subjected to the steps of development, etching, and photoresist stripping to form a predetermined pattern on the substrate, and the process proceeds to the next color filter forming step S402.

Next, in the color filter forming step S402, a color filter is formed in which a plurality of groups of 3 dots (dot) corresponding to R (Red), G (Green), and B (Blue) or a plurality of groups of filters of 3 stripes (stripe) of R, G, B are arranged in a matrix (matrix). After the color filter forming step S402, a cell assembling step S403 is performed. In the cell assembling step S403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern forming step S401, the color filter obtained in the color filter forming step S402, and the like. In the cell assembling step S403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern forming step S401 and the color filter obtained in the color filter forming step S402 to manufacture a liquid crystal panel (liquid crystal cell).

Then, in the module assembling step S404, after mounting the components such as the circuit for performing the display operation of the assembled liquid crystal panel (liquid crystal cell), the backlight (back light), and the like, the liquid crystal display element is completed. According to the method for manufacturing a liquid crystal display element, the scanning exposure apparatus of the present embodiment is used, and therefore, the liquid crystal display element can be manufactured at low cost.

According to the catadioptric projection optical system and the catadioptric optical device of the present invention, since the optical axes of the 1 st lens group, the 2 nd lens group, and the 3 rd lens group of the optical member having refractive power are arranged in parallel to the gravity direction, even when the lenses constituting the projection optical system, that is, the lenses constituting the 1 st lens group, the 2 nd lens group, and the 3 rd lens group are increased in size in order to increase the exposure area and the like, it is possible to provide a high-precision catadioptric projection optical system and a catadioptric optical device in which the lenses are not deformed asymmetrically with respect to the optical axis, and to perform a good pattern transfer.

Further, according to the scanning exposure apparatus of the present invention, the light beams from the plurality of fields of view of the plurality of projection optical systems can be guided to the plurality of projection areas while being transmitted in the opposite direction along the 1 st direction by the beam phase shift member, and the interval between the fields of view and the interval between the projection areas along the 1 st direction at that time can be appropriately set. Therefore, even if projection optical systems of different rows are used, the pattern can be transferred onto the board well.

Further, according to the scanning exposure apparatus of the present invention, since the high-precision catadioptric projection optical system and the catadioptric optical apparatus are provided without causing asymmetric deformation of the lens with respect to the optical axis, it is possible to perform good exposure. Further, since the catadioptric projection optical system and the catadioptric optical device have a magnification, the mask can be prevented from being enlarged and the manufacturing cost of the mask can be reduced.

Further, according to the method for manufacturing a micro-device of the present invention, the micro-device can be manufactured at low cost by using a large-sized substrate while avoiding an increase in size of the mask.

[ examples ]

Examples 1 and 2 are explained below. Tables 1 and 2 show various elements of the optical members of the catadioptric optical systems PL10 and PL20 of examples 1 and 2. In the optical members of tables 1 and 2, the following are shown: the surface number of row 1 (column) is the order of the surfaces along the direction of light traveling from the object side, row 2 is the radius of curvature (mm) of each surface, the surface interval of row 3 is the surface interval (mm) on the optical axis, row 4 is the refractive index of the optical member with respect to g-line of the glass material, row 5 is the refractive index of the optical member with respect to h-line of the glass material, and row 6 is the refractive index of the optical member with respect to i-line of the glass material.

(example 1)

As shown in fig. 11, the catadioptric optical system PL10 includes a concave mirror CCM, a 1 st lens group G1, a 2 nd lens group G2, a 3 rd lens group G3, a 1 st deflecting member FM1, and a 2 nd deflecting member FM 2.

Here, the 1 st lens group G1 includes a positive meniscus lens (positive meniscus lens) L10 with its concave surface facing the mask M, a negative meniscus lens (negative meniscus lens) L11 with its concave surface facing the mask M, and a negative meniscus lens L12 with its concave surface facing the mask M. The 2 nd lens group G2 includes a biconvex lens (biconvex lens) L13, a negative meniscus lens L14 with a concave surface facing the mask M, a biconcave lens (biconcave lens) L15, and a positive meniscus lens L16 with a concave surface facing the mask M. The 3 rd lens group G3 includes a negative meniscus lens L17 having a concave surface facing the plate P, a positive meniscus lens L18 having a concave surface facing the plate P, and a double convex lens L19.

Values of various elements of the catadioptric system PL10 of example 1 are as follows.

(various elements)

Projection magnification: 2.4 times of

Image side NA: 0.05625

Object side NA: 0.135

Image field: phi 228mm

Visual field: phi 95mm

Corresponding values of the conditional expressions: f3/f 1-1430/600-2.38

(Table 1)

(various elements of optical Member)

[ Table 1]

Fig. 12 and 13 show aberration diagrams of the catadioptric system PL 10. Here, fig. 12a shows spherical aberration, 12b shows field curvature, 12c shows distortion (aberration) aberration, 12d shows chromatic aberration of magnification, and fig. 13 shows light ray aberration. As shown in these figures, in the catadioptric optical system PL20, aberrations can be corrected satisfactorily.

(example 2)

As shown in fig. 14, the catadioptric optical system PL20 includes a concave mirror CCM, a 1 st lens group G1, a 2 nd lens group G2, a 3 rd lens group G3, a 1 st deflecting member FM1, and a 2 nd deflecting member FM 2.

Here, the 1 st lens group G1 includes a positive meniscus lens L20 concave toward the mask M, a negative meniscus lens L21 concave toward the mask M, and a negative meniscus lens L22 concave toward the mask M. The 2 nd lens group G2 includes a double convex lens L23, a negative meniscus lens L24 having a concave surface facing the mask M, a double concave lens L25, and a positive meniscus lens L26 having a concave surface facing the mask M. The 3 rd lens group G3 includes a negative meniscus lens L27 concave toward the plate P, a negative meniscus lens L28 concave toward the plate P, and a double convex lens L29.

Values of various elements of the catadioptric system PL20 of example 2 are as follows.

(various elements)

Projection magnification: 2.0 times of

Image side NA: 0.069

Object side NA: 0.138

Image field: phi 240mm

Visual field: phi 120mm

Corresponding values of the conditional expressions: f3/f 1-1321/642-2.06

(Table 2)

(various elements of optical Member)

[ Table 2]

Fig. 15 and 16 show aberration diagrams of the catadioptric system PL 20. Here, fig. 15a shows spherical aberration, 15b shows field curvature, 15c shows distortion aberration, 15d shows chromatic aberration of magnification, and fig. 16 shows light aberration. As shown in these figures, in the catadioptric optical system PL20, aberrations can be corrected satisfactorily.

The embodiments described above are disclosed for easy understanding of the present invention, and are not intended to limit the present invention. Therefore, each element disclosed in the embodiment is intended to include all design changes and equivalents that fall within the technical scope of the present invention.

Further, the present disclosure is related to the subject matters contained in japanese patent application No. 2006-.

The present invention can be preferably used for a catadioptric projection optical system and a catadioptric optical device that project an image of a mask (reticle) or the like onto a substrate or the like, a scanning exposure apparatus that project an image of a 1 st object onto a 2 nd object, and a method of manufacturing a micro device using the scanning exposure apparatus.

Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (14)

1. A catadioptric projection optical system that forms an enlarged image of a 1 st object disposed on a 1 st surface on a 2 nd object disposed on a 2 nd surface, comprising:

a light beam transmitting unit that transmits light emitted from the 1 st surface and traveling in a direction orthogonal to the 1 st surface in a 1 st direction along the 1 st surface, and guides the light transmitted in the 1 st direction to the 2 nd surface while traveling in the direction orthogonal to the 1 st surface;

the light beam transmitting section includes:

a 1 st deflecting member that deflects light traveling in a direction orthogonal to the 1 st surface to the 1 st direction;

a 2 nd deflecting member for guiding the light traveling in the 1 st direction from the 1 st deflecting member to the 2 nd surface while traveling in a direction orthogonal to the 1 st surface;

the catadioptric projection optical system includes:

a concave reflecting mirror disposed in an optical path between the 1 st surface and the 2 nd surface;

a 1 st lens group disposed in an optical path between the 1 st surface and the concave reflecting mirror;

a 2 nd lens group disposed in an optical path between the 1 st lens group and the concave reflecting mirror; and

a 3 rd lens group disposed in an optical path between the 2 nd deflecting member and the 2 nd surface and having an optical axis substantially parallel to an optical axis of the 1 st lens group,

wherein the 1 st deflecting member is disposed in an optical path between the 2 nd lens group and the 2 nd surface, deflects light from the 2 nd lens group toward the 1 st surface side along a direction orthogonal to the 1 st surface to the 1 st direction, and deflects the light to the 1 st direction

The 2 nd deflecting member is disposed in an optical path between the 1 st deflecting member and the 2 nd surface, and deflects light traveling in the 1 st direction from the 1 st deflecting member toward the 2 nd surface side in a direction orthogonal to the 1 st surface.

2. The catadioptric projection optical system of claim 1, wherein:

the distance between the 1 st surface and the 2 nd surface is larger than the distance between the 1 st surface and the concave reflecting mirror.

3. The catadioptric projection optical system of claim 1, wherein:

the optical members constituting the 1 st lens group, the 2 nd lens group, and the 3 rd lens group and having refractive power are arranged such that the optical axes thereof are parallel to the direction of gravity.

4. The catadioptric projection optical system of claim 1, further comprising:

an aperture stop disposed in an optical path between the concave mirror and the 2 nd lens group, for defining a numerical aperture on the 2 nd surface side of the catadioptric projection optical system, and

the aperture stop is positioned such that the 1 st surface side and the 2 nd surface side are substantially telecentric.

5. The catadioptric projection optical system of claim 1, wherein:

when the focal length of the 1 st lens group is f1, the focal length of the 3 rd lens group is f3, and the magnification of the projection optical system is β, the optical system satisfies

0.8×|β|≤f3／f1≤1.25×|β|

|β|≥1.8。

6. The catadioptric projection optical system of claim 1, wherein:

the catadioptric projection optical system includes: and an optical characteristic adjusting mechanism for adjusting the optical characteristics of the catadioptric projection optical system.

7. The catadioptric projection optical system of claim 6, wherein:

the optical characteristic adjustment mechanism is disposed in an optical path between the concave reflecting mirror and the 2 nd surface.

8. The catadioptric projection optical system of claim 1, wherein:

the magnified image of the 1 st object formed on the 2 nd surface is a primary image of the 1 st object.

9. The catadioptric projection optical system of claim 1, wherein:

the 1 st deflecting means deflects light traveling in a direction orthogonal to the 1 st surface so as to intersect the optical axis of the 1 st lens group.

10. A catadioptric optical device, comprising:

a 1 st imaging optical system for forming an intermediate image of a 1 st object, and a 2 nd imaging optical system for optically conjugating the formed intermediate image to a 2 nd object,

wherein at least one of the 1 st imaging optical system and the 2 nd imaging optical system is constituted by the catadioptric projection optical system according to any one of claims 1 to 7 and 9.

11. A scanning exposure apparatus characterized by:

moving a 1 st object disposed on a 1 st surface and a 2 nd object disposed on a 2 nd surface in synchronization with each other in a scanning direction to project and expose an image of the 1 st object onto the 2 nd object,

the scanning exposure apparatus includes: a 1 st projection optics and a 2 nd projection optics,

the 1 st projection optical device is positioned at the 1 st position in the scanning direction,

the 2 nd projection optical device is positioned at a 2 nd position different from the 1 st position in the scanning direction

The 1 st and 2 nd projection optical devices include the catadioptric projection optical system according to any one of claims 1 to 9.

12. A scanning exposure apparatus according to claim 11, characterized in that:

the 1 st and 2 nd projection optical devices are:

the 1 st and 2 nd projection optical devices are arranged such that the interval between the 2 nd surface sides is larger than the interval between the 1 st surface sides.

13. A scanning exposure apparatus according to claim 11, characterized in that:

the 2 nd object is a photosensitive substrate having an outer diameter of more than 500 mm.

14. A method of manufacturing a micro-component, comprising:

using the scanning exposure apparatus according to claim 11, exposing a mask pattern on a photosensitive substrate; and

and developing the photosensitive substrate with the exposed pattern.