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TWI428705B - 檢驗裝置、微影裝置、微影製程單元及檢驗方法 - Google Patents

檢驗裝置、微影裝置、微影製程單元及檢驗方法 Download PDF

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TWI428705B
TWI428705B TW99102272A TW99102272A TWI428705B TW I428705 B TWI428705 B TW I428705B TW 99102272 A TW99102272 A TW 99102272A TW 99102272 A TW99102272 A TW 99102272A TW I428705 B TWI428705 B TW I428705B
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Hugo Augustinus Joseph Cramer
Antoine Gaston Marie Kiers
Henricus Petrus Maria Pellemans
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Asml Netherlands Bv
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    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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    • G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
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    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
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    • G03F7/70605—Workpiece metrology
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Description

檢驗裝置、微影裝置、微影製程單元及檢驗方法
本發明係關於可用於(例如)藉由微影技術之器件製造中之檢驗方法，且係關於使用微影技術來製造器件之方法。
微影裝置為將所要圖案施加至基板上(通常施加至基板之目標部分上)的機器。微影裝置可用於(例如)積體電路(IC)之製造中。在彼情況下，圖案化器件(其或者被稱作光罩或比例光罩)可用以產生待形成於IC之個別層上的電路圖案。可將此圖案轉印至基板(例如，矽晶圓)上之目標部分(例如，包含晶粒之一部分、一個晶粒或若干晶粒)上。圖案之轉印通常係經由成像至提供於基板上之輻射敏感材料(抗蝕劑)層上。一般而言，單一基板將含有經順次圖案化之鄰近目標部分的網路。已知微影裝置包括：所謂的步進器，其中藉由一次性將整個圖案曝光至目標部分上來照射每一目標部分；及所謂的掃描器，其中藉由在給定方向(「掃描」方向)上經由輻射光束而掃描圖案同時平行或反平行於此方向而同步地掃描基板來照射每一目標部分。亦有可能藉由將圖案壓印至基板上而將圖案自圖案化器件轉印至基板。
為了監視微影程序，有必要量測經圖案化基板之參數，例如，形成於基板中或基板上之順次層之間的迭對誤差。存在用於進行在微影程序中所形成之顯微結構之量測的各種技術，包括掃描電子顯微鏡及各種專門工具之使用。一種形式之專門檢驗工具為散射計，其中將輻射光束引導至基板之表面上之目標上，且量測經散射光束或經反射光束之屬性。藉由比較光束在其已藉由基板反射或散射之前與之後的屬性，可判定基板之屬性。此可(例如)藉由比較經反射光束與儲存於與已知基板屬性相關聯之已知量測庫中的資料進行。已知兩種主要類型之散射計。光譜散射計將寬頻帶輻射光束引導至基板上，且量測經散射成特定窄角範圍之輻射的光譜(作為波長之函數的強度)。角解析散射計使用單色輻射光束，且量測作為角度之函數的經散射輻射之強度。
在角解析光譜測定法中，在各種角度下同時照明基板上之週期性標記。使用藉由此標記所繞射之光以量測彼標記之特定特性。若標記之週期足夠大，則經繞射光將含有更高繞射級。然而，第一繞射級之一部分通常係與第零繞射級之一部分混合，如附圖5所示。繞射級之此重疊通常產生標記之特性之較不穩固的重建構。為了分離出不同繞射級，可使用環形照明，且此導致如圖6所示的經分離之第零級繞射圖案與第一級繞射圖案。然而，已發現，該環形照明之使用可導致經量測標記特性之誤差，因為環形照明在經繞射光中提供較少資訊。舉例而言，在環形照明中，在正入射角附近不存在亦含有對於量測標記特性有價值之資訊的光束。
需要提供一種照明一基板之方法，其中有可能分離第一繞射級與第零繞射級，而同時以所有可能入射角及方位角來照明該基板。根據本發明之一態樣，提供一種經組態以量測一基板之一屬性的檢驗裝置。該裝置包含：一照明系統，其經組態以提供一輻射光束；一輻射投影儀，其經組態以將該輻射投影至該基板上；一高數值孔徑透鏡；及一偵測器。該偵測器經組態以偵測自該基板之一表面所反射的該輻射光束，且分離地偵測一第零繞射級與一第一繞射級。藉由該輻射投影儀所投影之該輻射光束之一所得照明輪廓係使得該輻射光束之強度分布關於在一光瞳平面中且傳遞通過該輻射投影儀之光軸之一虛線不對稱。
現將參看隨附示意性圖式而僅藉由實例來描述本發明之實施例，在該等圖式中，對應參考符號指示對應部分。
圖1示意性地描繪微影裝置。裝置包含：
-　照明系統(照明器)IL，其經組態以調節輻射光束B(例如，UV輻射或DUV輻射)；
-　支撐結構(例如，光罩台)MT，其經建構以支撐圖案化器件(例如，光罩)MA，且連接至經組態以根據特定參數來準確地定位圖案化器件之第一定位器PM；
-　基板台(例如，晶圓台)WT，其經建構以固持基板(例如，塗布抗蝕劑之晶圓)W，且連接至經組態以根據特定參數來準確地定位基板之第二定位器PW；及
-　投影系統(例如，折射投影透鏡系統)PL，其經組態以將藉由圖案化器件MA賦予至輻射光束B之圖案投影至基板W之目標部分C(例如，包含一或多個晶粒)上。
照明系統可包括用於引導、成形或控制輻射的各種類型之光學組件，諸如折射、反射、磁性、電磁、靜電或其他類型之光學組件，或其任何組合。
支撐結構支撐(亦即，承載)圖案化器件。支撐結構以取決於圖案化器件之定向、微影裝置之設計及其他條件(諸如圖案化器件是否被固持於真空環境中)的方式來固持圖案化器件。支撐結構可使用機械、真空、靜電或其他夾持技術來固持圖案化器件。支撐結構可為(例如)框架或台，其可根據需要而係固定或可移動的。支撐結構可確保圖案化器件(例如)相對於投影系統處於所要位置。可認為本文對術語「比例光罩」或「光罩」之任何使用均與更通用之術語「圖案化器件」同義。
本文所使用之術語「圖案化器件」應被廣泛地解釋為指代可用以在輻射光束之橫截面中向輻射光束賦予圖案以便在基板之目標部分中形成圖案的任何器件。應注意，例如，若被賦予至輻射光束之圖案包括相移特徵或所謂的輔助特徵，則圖案可能不會準確地對應於基板之目標部分中的所要圖案。通常，被賦予至輻射光束之圖案將對應於目標部分中所形成之器件(諸如積體電路)中的特定功能層。
圖案化器件可係透射或反射的。圖案化器件之實例包括光罩、可程式化鏡面陣列，及可程式化LCD面板。光罩在微影中係熟知的，且包括諸如二元、交變相移及衰減相移之光罩類型，以及各種混合光罩類型。可程式化鏡面陣列之一實例使用小鏡面之矩陣配置，該等小鏡面中之每一者可個別地傾斜，以便在不同方向上反射入射輻射光束。傾斜鏡面將圖案賦予於藉由鏡面矩陣所反射之輻射光束中。
本文所使用之術語「投影系統」應被廣泛地解釋為涵蓋任何類型之投影系統，包括折射、反射、反射折射、磁性、電磁及靜電光學系統或其任何組合，其適合於所使用之曝光輻射，或適合於諸如浸沒液體之使用或真空之使用的其他因素。可認為本文對術語「投影透鏡」之任何使用均與更通用之術語「投影系統」同義。
如此處所描繪，裝置為透射類型(例如，使用透射光罩)。或者，裝置可為反射類型(例如，使用如以上所提及之類型的可程式化鏡面陣列，或使用反射光罩)。
微影裝置可為具有兩個(雙平台)或兩個以上基板台(及/或兩個或兩個以上光罩台)的類型。在該等「多平台」機器中，可並行地使用額外台，或可在一或多個台上進行預備步驟，同時將一或多個其他台用於曝光。
微影裝置亦可為如下類型：其中基板之至少一部分可藉由具有相對較高折射率之液體(例如，水)覆蓋，以便填充投影系統與基板之間的空間。亦可將浸沒液體施加至微影裝置中之其他空間，例如，光罩與投影系統之間。浸沒技術在此項技術中被熟知用於增加投影系統之數值孔徑。如本文所使用之術語「浸沒」不意謂諸如基板之結構必須浸漬於液體中，而是僅意謂液體在曝光期間位於投影系統與基板之間。
參看圖1，照明器IL自輻射源SO接收輻射光束。舉例而言，當輻射源為準分子雷射時，輻射源與微影裝置可為分離實體。在該等情況下，不認為輻射源形成微影裝置之一部分，且輻射光束係藉助於包含(例如)適當引導鏡面及/或光束擴展器之光束傳送系統BD而自輻射源SO傳遞至照明器IL。在其他情況下，例如，當輻射源為汞燈時，輻射源可為微影裝置之整體部分。輻射源SO及照明器IL連同光束傳送系統BD(在需要時)可被稱作輻射系統。
照明器IL可包含用於調整輻射光束之角強度分布的調整器AD。通常，可調整照明器之光瞳平面中之強度分布的至少外部徑向範圍及/或內部徑向範圍(通常分別被稱作σ外部及σ內部)。此外，照明器IL可包含各種其他組件，諸如積光器IN及聚光器CO。照明器可用以調節輻射光束，以在其橫截面中具有所要均一性及強度分布。
輻射光束B入射於被固持於支撐結構(例如，光罩台MT)上之圖案化器件(例如，光罩MA)上，且係藉由圖案化器件而圖案化。在橫穿光罩MA後，輻射光束B傳遞通過投影系統PL，投影系統PL將光束聚焦至基板W之目標部分C上。藉助於第二定位器PW及位置感測器IF(例如，干涉量測器件、線性編碼器、2-D編碼器或電容性感測器)，基板台WT可準確地移動，例如，以便在輻射光束B之路徑中定位不同目標部分C。類似地，第一定位器PM及另一位置感測器(其未在圖1中被明確地描繪)可用以相對於輻射光束B之路徑來準確地定位光罩MA(例如，在自光罩庫之機械擷取之後或在掃描期間)。一般而言，可藉助於形成第一定位器PM之一部分的長衝程模組(粗略定位)及短衝程模組(精細定位)來實現光罩台MT之移動。類似地，可使用形成第二定位器PW之一部分的長衝程模組及短衝程模組來實現基板台WT之移動。在步進器(與掃描器相反)之情況下，光罩台MT可僅連接至短衝程致動器，或可係固定的。可使用光罩對準標記M1、M2及基板對準標記P1、P2來對準光罩MA與基板W。儘管如所說明之基板對準標記佔用專用目標部分，但其可位於目標部分之間的空間中(此等被稱為切割道對準標記)。類似地，在一個以上晶粒提供於光罩MA上之情形中，光罩對準標記可位於該等晶粒之間。
所描繪裝置可用於以下模式中之至少一者中：
1.　在步進模式中，在將被賦予至輻射光束之整個圖案一次性投影至目標部分C上時，使光罩台MT及基板台WT保持基本上靜止(亦即，單次靜態曝光)。接著，使基板台WT在X及/或Y方向上移位，使得可曝光不同目標部分C。在步進模式中，曝光場之最大尺寸限制單次靜態曝光中所成像之目標部分C的尺寸。
2.　在掃描模式中，在將被賦予至輻射光束之圖案投影至目標部分C上時，同步地掃描光罩台MT與基板台WT(亦即，單次動態曝光)。可藉由投影系統PL之放大率(縮小率)及影像反轉特性來判定基板台WT相對於光罩台MT之速度及方向。在掃描模式中，曝光場之最大尺寸限制單次動態曝光中之目標部分的寬度(在非掃描方向上)，而掃描運動之長度判定目標部分之高度(在掃描方向上)。
3.　在另一模式中，在將被賦予至輻射光束之圖案投影至目標部分C上時，使光罩台MT保持基本上靜止，從而固持可程式化圖案化器件，且移動或掃描基板台WT。在此模式中，通常使用脈衝式輻射源，且在基板台WT之每一移動之後或在掃描期間的順次輻射脈衝之間根據需要而更新可程式化圖案化器件。此操作模式可易於應用於利用可程式化圖案化器件(諸如以上所提及之類型的可程式化鏡面陣列)之無光罩微影。
亦可使用對以上所描述之使用模式之組合及/或變化或完全不同的使用模式。
如圖2所示，微影裝置LA形成微影單元LC(有時亦被稱作微影單元或叢集)之一部分，其亦包括用以對基板執行曝光前程序及曝光後程序之裝置。通常，此等裝置包括用以沈積抗蝕劑層(例如，塗層)之旋塗器SC、用以顯影經曝光抗蝕劑之顯影器DE、冷卻板CH，及烘烤板BK。基板處置器或機器人RO自輸入/輸出口I/O1、I/O2拾取基板、在不同程序裝置之間移動基板，且接著將基板傳送至微影裝置之裝載盤LB。通常被集體地稱作塗布顯影系統(track)之此等器件係在塗布顯影系統控制單元TCU之控制下，塗布顯影系統控制單元TCU自身係藉由監督控制系統SCS控制，監督控制系統SCS亦經由微影控制單元LACU而控制微影裝置。因此，不同裝置可經操作以最大化產出率及製程效率。
為了使藉由微影裝置所曝光之基板被正確地且一致地曝光，需要檢驗經曝光基板以量測諸如後續層之間的迭對誤差、線厚度、臨界尺寸(CD)等等的屬性。若偵測到誤差，則可對後續基板之曝光進行調整(尤其係在檢驗可被足夠迅速且快速地進行以使得同一分批之其他基板仍待曝光的情況下)。又，已經曝光之基板可經剝離及重做-以改良良率-或經廢除-藉此避免對已知為有缺陷之基板執行曝光。在基板之僅一些目標部分為有缺陷之情況下，可僅對為良好之彼等目標部分執行另外曝光。
使用檢驗裝置以判定基板之屬性，且特別係判定不同基板或同一基板之不同層的屬性如何在層與層之間變化。檢驗裝置可經整合至微影裝置LA或微影單元LC中或可為獨立器件。為了實現最快量測，需要使檢驗裝置在曝光之後立即量測經曝光抗蝕劑層中之屬性。然而，抗蝕劑中之潛影具有極低對比度-在已曝光至輻射的抗蝕劑之部分與尚未曝光至輻射的抗蝕劑之部分之間僅存在極小的折射率差-且並非所有檢驗裝置均具有足夠敏感性來進行潛影之有用量測。因此，可在曝光後烘烤步驟(PEB)之後採取量測，曝光後烘烤步驟(PEB)通常為對經曝光基板所進行之第一步驟且其增加抗蝕劑之經曝光部分與未經曝光部分之間的對比度。在此階段，抗蝕劑中之影像可被稱作半潛伏的。亦有可能進行經顯影抗蝕劑影像之量測-此時，抗蝕劑之經曝光部分或未經曝光部分已被移除-或在諸如蝕刻之圖案轉印步驟之後進行經顯影抗蝕劑影像之量測。後者可能性限制重做有缺陷基板之可能性，但仍可提供有用資訊。
圖3描繪可用於本發明中之散射計SM1。散射計SM1包含將輻射投影至基板W上之寬頻帶(白光)輻射投影儀2。將經反射輻射傳遞至光譜計偵測器4，其偵測(例如，量測)鏡面經反射輻射之光譜10(作為波長之函數的強度)。自此資料，可藉由製程單元PU來重建構引起經偵測光譜之結構或輪廓，例如，藉由嚴密耦合波分析及非線性回歸，或藉由與如圖3之底部處所示之模擬光譜庫相比較。一般而言，為了重建構，已知通用形式之結構，且根據對製造該結構所採用之程序的認識來假定一些參數，從而僅留下該結構之少許參數以自散射量測資料加以判定。該散射計可經組態為正入射散射計或斜入射散射計。
圖4中展示可用於本發明之另一散射計SM2。在此器件中，藉由輻射源2所發射之輻射係使用透鏡系統12而聚焦通過干涉濾光器13及偏振器17、藉由部分反射表面16反射且經由顯微鏡接物鏡15而聚焦至基板W上，顯微鏡接物鏡15具有高數值孔徑(NA)，較佳地為至少0.9且更佳地為至少0.95。浸沒散射計可甚至具有數值孔徑超過1之透鏡。經反射輻射接著通過部分反射表面16而透射至偵測器18中，以便偵測散射光譜。偵測器可位於背部投影式光瞳平面11中，背部投影式光瞳平面11處於透鏡系統15之焦距。然而，光瞳平面可代替地藉由輔助光學儀器(未圖示)而再成像至偵測器上。光瞳平面為輻射之徑向位置界定入射角且角位界定輻射之方位角所處的平面。偵測器較佳地為二維偵測器，使得可量測基板目標30之二維角散射光譜。偵測器18可為(例如)CCD或CMOS感測器陣列，且可使用為(例如)每圖框40毫秒之積分時間。
舉例而言，通常使用參考光束以量測入射輻射之強度。為了進行此過程，當輻射光束入射於光束分裂器16上時，使輻射光束之一部分透射通過光束分裂器以作為朝向參考鏡面14之參考光束。接著將參考光束投影至同一偵測器18之不同部分上。
干涉濾光器13之集合可用以選擇在(比如)405奈米至790奈米或甚至更低(諸如200奈米至300奈米)之範圍內的所關注波長。干涉濾光器可係可調諧的，而非包含不同濾光器之集合。可使用光柵以代替干涉濾光器。
偵測器18可量測經散射光在單一波長(或窄波長範圍)下之強度、分離地量測在多個波長下之強度，或量測在一波長範圍內所積分之強度。此外，偵測器可分離地量測橫向磁偏振光及橫向電偏振光之強度，及/或橫向磁偏振光與橫向電偏振光之間的相位差。
使用寬頻帶光源(亦即，具有寬光頻率或波長範圍且因此具有寬顏色範圍之光源)係可能的，其給出大光展量(etendue)，從而允許多個波長之混合。寬頻帶中之複數個波長較佳地各自具有為δλ之頻寬及為至少2δλ(亦即，頻寬之兩倍)之間隔。若干輻射「源」可為已使用光纖束而加以分裂的延伸式輻射源之不同部分。以此方式，可在多個波長下並行地量測角度解析散射光譜。可量測3-D光譜(波長及兩個不同角度)，其與2-D光譜相比較含有更多資訊。此允許量測更多資訊，其增加度量衡程序穩固性。此在EP1,628,164A中得以更詳細地描述，EP1,628,164A係作為背景以引用之方式併入本文中。
基板W上之目標30可為光柵，其經印刷，使得在顯影之後，條狀物(bar)係由固體抗蝕劑線形成。或者，條狀物可經蝕刻至基板中。此圖案對微影投影裝置(特別係投影系統PL)中之色像差敏感，且照明對稱性及該等像差之存在將使其自身表現為經印刷光柵之變化。因此，使用經印刷光柵之散射量測資料來重建構光柵。根據對印刷步驟及/或其他散射量測程序之認識，可將光柵之參數(諸如線寬及形狀)輸入至藉由製程單元PU所執行之重建構程序。
根據本發明，在角解析光譜測定法期間照明基板之輻射光束具有虛線。對於經照明的照明輪廓中之任何點(或區域)，在未經照明的虛線之相反側上存在對應點(或區域)。類似地，對於未經照明的照明輪廓中之任何點，在未經照明的虛線之相反側上存在對應點。進行此過程之最簡單方式係照明一半照明輪廓，如圖7a所示。待照明之標記之對稱線應匹配於且平行於照明輪廓之對稱平面。圖7b中展示所得光瞳平面。可看出，第一級繞射圖案被描繪於光瞳平面之一半中，且第零級繞射圖案被描繪於光瞳平面之另一半中。繞射圖案因此被分離，而無與環形照明輪廓之使用相關聯之缺點中之任一者。以此方式，使用來自第一級之額外資訊，而不移除第零繞射級中之資訊。可接著使用經分離地量測之第零繞射級與第一繞射級來重建構標記之特性，第零繞射級及第一繞射級係使用本發明之方法加以量測。
圖8中描繪本發明之另一實施例。在此實施例中，圖8a所示之照明輪廓被劃分成四個象限，其中第一象限及第三象限經照明，且第二象限及第四象限未經照明。較佳地，該等象限之尺寸相等。因此，在此實施例中存在兩個虛線。此類型之照明輪廓係結合經對準成平行於照明輪廓之虛線的具有至少兩個對稱度之標記加以使用。圖8b中展示所得光瞳平面。
儘管圖8a描繪四個象限中之兩者經照明的照明輪廓，但僅有必要照明該等象限中之一者，且圖9a中描繪該照明輪廓。圖9b中描繪所得光瞳平面。該照明輪廓在(例如)接觸孔徑陣列之照明中尤其有用。然而，照明第二象限會減少感測器不對稱性之影響。此外，其亦給出有助於改良經量測標記特性之再現性的更多經量測像片。
儘管已關於第零級繞射圖案及第一級繞射圖案而描述本發明，但相同原理可應用於第一級繞射圖案及第二級繞射圖案，以及第二級繞射圖案及第三級繞射圖案。照明輪廓可經配置成使得該等繞射圖案藉由(例如)使用僅特定象限經照明之照明輪廓而分離。
經量測之角度解析光譜含有均用於標記特性之重建構中的經分離之第零繞射級資訊與第一繞射級資訊。重建構方法可(例如)依賴於即時回歸方法、庫或此等兩者之混合。
儘管在本文中可特定地參考微影裝置在IC製造中之使用，但應理解，本文所描述之微影裝置可具有其他應用，諸如製造整合光學系統、用於磁疇記憶體之導引及偵測圖案、平板顯示器、液晶顯示器(LCD)、薄膜磁頭，等等。熟習此項技術者應瞭解，在該等替代應用之情境中，可認為本文對術語「晶圓」或「晶粒」之任何使用分別與更通用之術語「基板」或「目標部分」同義。可在曝光之前或之後在(例如)塗布顯影系統(通常將抗蝕劑層施加至基板且顯影經曝光抗蝕劑之工具)、度量衡工具及/或檢驗工具中處理本文所提及之基板。適用時，可將本文之揭示內容應用於該等及其他基板處理工具。另外，可將基板處理一次以上，(例如)以便形成多層IC，使得本文所使用之術語基板亦可指代已經含有多個經處理層之基板。
儘管以上可特定地參考在光學微影之情境中對本發明之實施例的使用，但應瞭解，本發明可用於其他應用(例如，壓印微影)中，且在情境允許時不限於光學微影。在壓印微影中，圖案化器件中之構形界定形成於基板上之圖案。可將圖案化器件之構形壓入被供應至基板之抗蝕劑層中，在基板上，抗蝕劑係藉由施加電磁輻射、熱、壓力或其組合而固化。在抗蝕劑固化之後，將圖案化器件移出抗蝕劑，從而在其中留下圖案。
本文所使用之術語「輻射」及「光束」涵蓋所有類型之電磁輻射，包括紫外線(UV)輻射(例如，具有為或為約365奈米、355奈米、248奈米、193奈米、157奈米或126奈米之波長)及極紫外線(EUV)輻射(例如，具有在為5奈米至20奈米之範圍內的波長)；以及粒子束(諸如離子束或電子束)。
術語「透鏡」在情境允許時可指代各種類型之光學組件中之任一者或其組合，包括折射、反射、磁性、電磁及靜電光學組件。
儘管以上已描述本發明之特定實施例，但應瞭解，可以與所描述之方式不同的其他方式來實踐本發明。舉例而言，本發明可採取如下形式：電腦程式，其含有描述如以上所揭示之方法之機器可讀指令的一或多個序列；或資料儲存媒體(例如，半導體記憶體、磁碟或光碟)，其具有儲存於其中之該電腦程式。
以上描述意欲係說明性而非限制性的。因此，對於熟習此項技術者將顯而易見，可在不脫離以下所闡明之申請專利範圍之範疇的情況下對如所描述之本發明進行修改。
2．．．寬頻帶(白光)輻射投影儀/輻射源
4．．．光譜計偵測器
10．．．光譜
11．．．背部投影式光瞳平面
12．．．透鏡系統
13．．．干涉濾光器
14．．．參考鏡面
15．．．顯微鏡接物鏡/透鏡系統
16．．．部分反射表面/光束分裂器
17．．．偏振器
18．．．偵測器
30．．．基板目標
AD．．．調整器
B．．．輻射光束
BD．．．光束傳送系統
BK．．．烘烤板
C．．．目標部分
CH．．．冷卻板
CO．．．聚光器
DE．．．顯影器
IF．．．位置感測器
IL．．．照明系統/照明器
IN．．．積光器
I/O1．．．輸入/輸出口
I/O2．．．輸入/輸出口
LA．．．微影裝置
LACU．．．微影控制單元
LB．．．裝載盤
LC．．．微影單元
M1．．．光罩對準標記
M2．．．光罩對準標記
MA．．．圖案化器件/光罩
MT．．．支撐結構/光罩台
P1．．．基板對準標記
P2．．．基板對準標記
PL．．．投影系統
PM．．．第一定位器
PU．．．製程單元
PW．．．第二定位器
RO．．．機器人
SC．．．旋塗器
SCS．．．監督控制系統
SM1．．．散射計
SM2．．．散射計
SO．．．輻射源
TCU．．．塗布顯影系統控制單元
W．．．基板
WT．．．基板台
圖1描繪微影裝置；
圖2描繪微影單元或叢集；
圖3描繪第一散射計；
圖4描繪第二散射計；
圖5描繪使用習知照明之光瞳平面；
圖6描繪使用角照明之光瞳平面；
圖7a描繪根據本發明之一實施例的照明輪廓；
圖7b描繪使用圖7a所描繪之照明輪廓的光瞳平面；
圖8a描繪根據本發明之另一實施例的照明輪廓；
圖8b描繪使用圖8a所描繪之照明輪廓的光瞳平面；
圖9a描繪替代照明輪廓；及
圖9b描繪使用圖9a所描繪之照明輪廓的光瞳平面。
(無元件符號說明)

Claims (27)

  1. 一種檢驗裝置，其經組態以量測一基板之一屬性，該裝置包含：一照明系統，其經組態以提供一輻射光束；一輻射投影儀，其經組態以將該輻射投影至該基板上；一數值孔徑透鏡；一具有一標記之基板，該標記具有一對稱線，該對稱線與該輻射投影儀所投影之輻射光束之一照明輪廓之一對稱平面平行且對齊；一偵測器，其經組態以偵測自該基板之一表面反射的該輻射光束，且分離地偵測第零繞射級與一更高繞射級，其中該照明輪廓係使得可使用該經分離地偵測之第零繞射級與該更高繞射級來重建構該標記之至少一特性。
  2. 如請求項1之檢驗裝置，其中該更高繞射級為第一繞射級。
  3. 如請求項1之檢驗裝置，其中該輻射光束之一強度分布係不對稱於在光瞳平面中且傳遞通過該輻射投影儀之光軸之一虛線。
  4. 如請求項1之檢驗裝置，其中該照明輪廓係使得：在該照明輪廓之至少一部分上方，經照明的在該虛線之一第一側上之部分具有未經照明的在該虛線之另一側上對稱地相反之對應部分，且未經照明的在該虛線之該第一側 上之該等部分之至少一部分具有經照明的在該虛線之該另一側上對稱地相反之對應部分。
  5. 如請求項1之檢驗裝置，其中該照明系統組態該輻射光束以具有輻射輪廓。
  6. 如請求項1之檢驗裝置，其中該照明輪廓具有垂直於該第一虛線之一第二虛線，且在該照明輪廓之至少一部分上方，經照明的在該第二虛線之一第一側上之部分具有未經照明的在該第二虛線之另一側上對稱地相反之對應部分，且未經照明的在該第二虛線之該第一側上之該等部分之至少一部分具有經照明的在該第二虛線之該另一側上對稱地相反之對應部分。
  7. 如請求項1之檢驗裝置，其中該照明輪廓具有四個相等象限，一個象限經照明且其他三個象限未經照明。
  8. 如請求項1之檢驗裝置，其中該照明輪廓具有四個相等象限，兩個非鄰近象限經照明且其他兩個非鄰近象限未經照明。
  9. 如請求項1之檢驗裝置，其中該基板上之該標記具有至少兩個對稱角度，其分別與該照明輪廓之虛線平行且對齊。
  10. 如請求項1之檢驗裝置，其中該照明系統經組態以阻隔對應於偵測到該等第一繞射級的該光瞳平面中之區域的該輻射之部分。
  11. 一種微影裝置，其包含：一照明光學系統，其經配置以照明一圖案； 一投影光學系統，其經配置以將該圖案之一影像投影至一基板上；及一種檢驗裝置，其經組態以量測一基板之一屬性，該裝置包含：一照明系統，其經組態以提供一輻射光束；一輻射投影儀，其經組態以將該輻射投影至該基板上；一數值孔徑透鏡；一具有一標記之基板，該標記具有一對稱線，該對稱線與該輻射投影儀所投影之輻射光束之一照明輪廓之一對稱平面平行且對齊；一偵測器，其經組態以偵測自該基板之一表面反射的該輻射光束，且分離地偵測第零繞射級與一更高繞射級，其中該照明輪廓係使得可使用該經分離地偵測之第零繞射級與該更高繞射級來重建構該標記之至少一特性。
  12. 一種微影單元，其包含：一塗布器(coater)，其經配置以使用一輻射敏感層來塗布基板；一微影裝置，其經配置以將影像曝光至藉由該塗布器所塗布之基板之該輻射敏感層上；一顯影器，其經配置以顯影藉由該微影裝置所曝光之影像；及 一種檢驗裝置，其經組態以量測一基板之一屬性，該裝置包含：一照明系統，其經組態以提供一輻射光束；一輻射投影儀，其經組態以將該輻射投影至該基板上；一數值孔徑透鏡；一具有一標記之基板，該標記具有一對稱線，該對稱線與該輻射投影儀所投影之輻射光束之一照明輪廓之一對稱平面平行且對齊；一偵測器，其經組態以偵測自該基板之一表面反射的該輻射光束，且分離地偵測第零繞射級與一更高繞射級，其中該照明輪廓係使得可使用該經分離地偵測之第零繞射級與該更高繞射級來重建構該標記之至少一特性。
  13. 一種量測一基板之一屬性之方法，該方法包含：將一輻射光束投影至該基板上之一目標上；調準該基板上之一標記之一對稱線使其與所投影之輻射光束之一照明輪廓之一對稱平面平行；偵測藉由該基板所反射之該輻射；及自該反射輻射判定該屬性，其中藉由一輻射投影儀所投影之該輻射光束之照明輪廓係使得該輻射光束之強度分布係不對稱於在一光瞳平面中且傳遞通過該輻射投影儀之光軸之一虛線。
  14. 一種檢驗裝置，其經組態以量測一基板之一屬性，該裝置包含：一照明系統，其經組態以提供一輻射光束；一輻射投影儀，其經組態以將該輻射光束投影至該基板上；一數值孔徑透鏡；一具有一標記之基板，該標記具有一對稱線，該對稱線與該輻射投影儀所投影之輻射光束之一照明輪廓之一對稱平面平行且對齊；及一偵測器，其經組態以偵測自該基板之一表面所反射的該輻射光束，且分離地偵測一第零繞射級與一第一繞射級；其中藉由該輻射投影儀所投影之該輻射光束之該照明輪廓係使得該輻射光束之一強度分布不對稱於在一光瞳平面中且傳遞通過該輻射投影儀之一光軸之一虛線。
  15. 如請求項14之檢驗裝置，其中該照明輪廓係使得：在該照明輪廓之至少一部分上方，經照明的在該虛線之一第一側上之部分具有未經照明的在該虛線之另一側上對稱地相反之對應部分，且未經照明的在該虛線之該第一側上之部分具有經照明的在該虛線之該另一側上對稱地相反之對應部分。
  16. 如請求項14之檢驗裝置，其中該照明系統組態該輻射光束以具有輻射輪廓。
  17. 如請求項14之檢驗裝置，其中該照明輪廓具有垂直於該 第一虛線之一第二虛線，且其中在該照明輪廓之至少一部分上方，經照明的在該第二虛線之一第一側上之部分具有未經照明的在該第二虛線之另一側上對稱地相反之對應部分，且未經照明的在該第二虛線之該第一側上之部分具有經照明的在該第二虛線之該另一側上對稱地相反之對應部分。
  18. 如請求項14之檢驗裝置，其中該照明輪廓具有四個象限，一個象限經照明且其他象限未經照明。
  19. 如請求項18之檢驗裝置，其中該四個象限之尺寸相等。
  20. 如請求項14之檢驗裝置，其中該照明輪廓具有四個象限，兩個非鄰近象限經照明且兩個其他非鄰近象限未經照明。
  21. 如請求項14之檢驗裝置，其中該四個象限之尺寸相等。
  22. 如請求項17之檢驗裝置，其中該基板上之該標記具有至少兩個對稱角度，其分別與該照明輪廓之虛線平行且對齊。
  23. 如請求項14之檢驗裝置，其中該照明系統經組態以阻隔對應於偵測到該等第一繞射級的該光瞳平面中之區域的該輻射之部分。
  24. 一種微影裝置，其包含：一照明光學系統，其經配置以照明一圖案；一投影光學系統，其經配置以將該圖案之一影像投影至一基板上；及一檢驗裝置，其包含： 一具有一標記之基板，該標記具有一對稱線，該對稱線與該輻射投影儀所投影之輻射光束之一照明輪廓之一對稱平面平行且對齊；及一偵測器，該偵測器經組態以偵測自該基板之一表面所反射的一輻射光束，且分離地偵測一第零繞射級與一第一繞射級，其中該經反射輻射光束之該照明輪廓係使得其一強度分布不對稱於在一光瞳平面中且傳遞通過該投影光學系統之一光軸之一虛線。
  25. 一種微影單元，其包含：一塗布器，其經配置以使用一輻射敏感層來塗布基板；一微影裝置，其經配置以將影像曝光至藉由該塗布器所塗布之基板之該輻射敏感層上；一顯影器，其經配置以顯影藉由該微影裝置所曝光之影像；及一檢驗裝置，其包含一具有一標記之基板，該標記具有一對稱線，該對稱線與該輻射投影儀所投影之輻射光束之一照明輪廓之一對稱平面平行且對齊；及一偵測器，該偵測器經組態以偵測自該基板之一表面所反射的一輻射光束，且分離地偵測一第零繞射級與一第一繞射級，其中該經反射輻射光束之該照明輪廓係使得其一 強度分布不對稱於在一光瞳平面中且傳遞通過投影光學系統之一光軸之一虛線。
  26. 一種量測一基板之一屬性之方法，該方法包含：使用一投影光學系統將一輻射光束自該目標投影至該基板上；調準該基板上之一標記之一對稱線使其與所投影之輻射光束之一照明輪廓之一對稱平面平行；偵測藉由該基板所反射之輻射且分離地偵測第零繞射級與一更高繞射級；及使用該經分離地偵測之第零繞射級與該更高繞射級來重建構該標記之至少一特性。
  27. 如請求項26之方法，其中該輻射光束之一強度分布係不對稱於在光瞳平面中且傳遞通過該投影光學系統之光軸之一虛線。
TW99102272A 2009-02-11 2010-01-27 檢驗裝置、微影裝置、微影製程單元及檢驗方法 TWI428705B (zh)

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