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TWI415979B - 製造半導體材料之單晶之方法 - Google Patents

製造半導體材料之單晶之方法 Download PDF

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TWI415979B
TWI415979B TW098127086A TW98127086A TWI415979B TW I415979 B TWI415979 B TW I415979B TW 098127086 A TW098127086 A TW 098127086A TW 98127086 A TW98127086 A TW 98127086A TW I415979 B TWI415979 B TW I415979B
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melt
interface
induction heating
heating coil
neck
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Ammon Wilfried Von
Ludwig Altmannshofer
Helge Riemann
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Siltronic Ag
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    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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Description

製造半導體材料之單晶之方法
本發明係關於一種製造半導體材料之單晶之方法，其中在一具有由該半導體材料所構成之排出管(run-off tube)的圓盤上熔化該半導體材料之顆粒；一由該等經熔化之顆粒所形成的熔體，係以一熔體頸(melt neck)和一熔體腰(melt waist)之形式自該排出管延伸至一相界面(phase boundary)；利用一具有開口之感應加熱線圈將熱量傳送至該熔體，該熔體頸係穿越過該開口；以及於該相界面處進行該熔體之結晶作用。
例如US 2003/145781 A描述了一種這樣的方法。該方法能夠利用顆粒作為原料來製造半導體材料的單晶。US 2003/145781 A的第4圖所示為一種適於實施該方法之裝置。在一圓盤上熔化顆粒，在圓盤的中心處具有一延伸至排出管的通道開口。一設置在圓盤上方之第一感應加熱線圈係用以熔化顆粒。經熔化之顆粒首先形成一薄膜，並在該方法隨後的過程中形成一熔體，其在一相界面處進行結晶作用，並因此使生長中之單晶的體積增加。結晶化之體積係藉由新熔化之顆粒的相應體積來補償。熔體係從排出管延伸至相界面，在相界面處生長單晶。熔體在排出管的區域內具有一熔體頸的形狀，該熔體頸穿過一第二感應加熱線圈的開口，並轉變為一位於生長中單晶上之較寬的熔體腰。藉助於第二感應加熱線圈將熱量傳送至熔體，以控制單晶的生長。
因為排出管係由半導體材料所構成，所以若能量輸入係相應地高，則可能導致其被第二感應加熱線圈熔化。另一方面，若由第二感應加熱線圈提供的能量不足以保持排出管區域內的熔體為液態，則排出管會向下生長。但是，排出管與熔體之間界面的位置必須無法在軸向上任意地長距離移動，即無法向上或向下長距離移動。若因為排出管被熔化而使界面向上移動得過遠，則會增加熔體頸的體積，並導致熔體接觸第二感應加熱線圈或者熔體頸變得過細而斷裂的危險。若因為排出管在該方向上生長而使界面向下移動得過遠，則會導致排出管凝結及熔體流停止的危險。因為這兩種情況會阻止單晶進一步生長，所以均不允許發生。
因此，本發明之目的係在於改變該方法，從而能夠更有效控制界面的軸向位置。
該目的係透過一種製造半導體材料之單晶之方法而實現的，包含：在一具有由該半導體材料所構成之排出管的圓盤上，藉由一第一感應加熱線圈熔化該半導體材料之顆粒；由該等經熔化之顆粒形成一熔體，其係以一熔體頸和一熔體腰之形式自該排出管延伸至一相界面；利用一具有開口之第二感應加熱線圈將熱量傳送至該熔體，該熔體頸係穿越過該開口；以及於該相界面處進行該熔體之結晶作用，該方法包含將一冷卻氣體傳送至該排出管及該熔體頸，以控制該排出管與該熔體頸間界面的軸向位置。
此外，該目的係透過一種製造半導體材料之單晶之裝置而實現的，其包含以下特徵：一用以接收該半導體材料之顆粒的圓盤，該圓盤係於其中心處具有一延伸至一排出管之開口；一用以熔化該圓盤上之顆粒的第一感應加熱線圈；一用以將能量傳送至一由該經熔化之顆粒所形成的熔體之第二感應加熱線圈，該第二感應加熱線圈於其中心處具有一熔體之通道開口；以及一用以將一氣體經控制地導入一由該熔體所形成之熔體頸與該排出管接觸之區域內的設備。
來自一漏斗14的顆粒13係於一可旋轉之圓盤9上熔化，在圓盤9的中心處具有一延伸至一排出管11的通道開口。一設置在圓盤9上方的第一感應加熱線圈係用以熔化顆粒13。第一感應加熱線圈較佳係經設計，使透過線圈電極(coil terminals)5所供應之射頻電流實質上流過一線圈架1和線段2。線段2在其下端透過一細棒3而彼此導電性連接。線圈架1具有沿徑向取向的導電縫隙，其迫使電流在曲向路徑上流經線圈架1。以此方式可確保圓盤9表面的全部區域皆被電磁場均勻地覆蓋。線圈架1在其外部區域內具有至少一個通道開口6，以將半導體材料的顆粒13傳送至旋轉中之圓盤9上。第一感應加熱線圈還進一步配備有一冷卻系統，包含一位於線圈架1中之冷卻通道7，冷卻劑(例如水)在其中流動。冷卻通道7持續到線段2接觸並透過管橋8而相互連接，以加強冷卻線段2。管橋8延伸到達線圈架1上側面之中心以及遠至線段2，並透過例如焊料焊接或直接焊接而連接於其上。管橋8係單重纏繞或多重纏繞，以使其具有足夠高的感應。射頻電流因此而實質上流經與線段2連接之棒3，而非流經管橋8。由於電流流動，在棒3區域內之線場強度特別高，且在製造單晶10過程中與棒3直接相對之熔體部分的感應加熱是特別有效的。熔體和棒3較佳係處於相同的電位，尤其較佳係處於相同的接地電位。
圓盤9係由與顆粒13相同之半導體材料所構成，並較佳係與例如DE 102 04 178 A1中所述之容器類似的方式予以體現，其內容係特別併於本文中以供參考。但亦可以一具有中心排出管之簡單平板予以體現。
在該方法中，顆粒13形成熔體，其可被劃分成一連續薄膜12、一熔體頸18和一熔體腰16。在相界面4處進行熔體之結晶作用，並因此而增加生長中單晶10之體積。結晶化之體積係藉由新熔化之顆粒的相應體積來補償。熔體頸18係從排出管11的下端延伸遠至熔體腰16，並穿過第二感應加熱線圈15之開口。比熔體頸18更寬之熔體腰16係位於生長中之單晶10上。藉助於第二感應加熱線圈15將熱量傳送至熔體，以控制單晶10的生長。一擋板19，其較佳係由快速冷卻(actively cooled)的金屬板所構成，係設置在感應加熱線圈之間，以使在電磁性上遮罩彼此。此外，檔板19可冷卻圓盤9的底部。
提供一種設備以實施本發明之方法，該設備能夠在排出管11與熔體頸18之間界面17的區域內，將冷卻氣體經控制地傳送至排出管11和熔體頸18。在所示之實施態樣中，該設備包含一噴嘴20，透過其將冷卻氣體(較佳為氬氣)從側向傳送至排出管11和熔體頸18。噴嘴20較佳係與第二感應加熱線圈15結合。然而，其亦可安置於檔板19之中或之上。該設備還進一步包含一用以光學檢測界面17之軸向位置的相機21以及一用以供應噴嘴20冷卻氣體之控制器22。相機21、噴嘴20和控制器22係經連結以形成一控制回路。利用相機21由排出管11與熔體之間亮度的明顯區別來確定界面17的軸向位置。控制器22，其較佳為一PID控制器(比例控制器、積分控制器和微分控制器之組合)係取決於所測定之界面17位置來控制通過噴嘴20的氣體體積流量。若界面17向上移動至高於所能容許之上邊界位置，則控制器22會增加體積流量，以使半導體材料因增強之冷卻作用而在排出管11的末端凝固，並使排出管11變長。此影響是界面17向下移動。若界面17向下移動至低於所能容許之下邊界位置，則控制器22會減少體積流量，以使因減弱之冷卻作用而使排出管11在其下端熔化。此影響是界面17向上移動。
從第二感應加熱線圈15中心處至上下邊界位置之距離較佳係不超過10毫米，尤其是不超過5毫米。因此控制界面17之軸向位置，以使界面17較佳係維持在軸向長度小於20毫米，尤其較佳係小於10毫米之區域內。
可以透過將第二感應加熱線圈15移至側面來協助該控制過程，從而相對於圓盤9和單晶10之旋轉軸而言，熔體頸18不再軸對稱地穿過第二感應加熱線圈15的開口。此措施在單晶10直徑變寬至一最終直徑的階段而言是特別有利的。第二感應加熱線圈15距離熔體越近，則總能量輸入越多，即供應至熔體頸18的總能量越多。當第二感應加熱線圈15接近熔體頸18時，可實現額外的能量輸入；雖然在感應加熱線圈側向移動時，其至熔體頸18一側的距離縮短，但是同時其至熔體頸18相對側的距離會增加。第二感應加熱線圈15從熔體頸18軸對稱地穿過線圈開口的位置往熔體頸18側向移動，此定性地具有與減少通過噴嘴20之冷卻氣體的體積流量相同之作用。
實施例
在根據第1圖之裝置中，可製造複數個直徑為70毫米、105毫米和150毫米之矽單晶，以證明本發明的實現。
1．．．線圈架
2．．．線段
3．．．棒
4．．．相界面
5．．．線圈電極
6．．．通道開口
7．．．冷卻通道
8．．．管橋
9．．．圓盤
10．．．單晶
11．．．排出管
12．．．連續薄膜
13．．．顆粒
14．．．漏斗
15．．．第二感應加熱線圈
16．．．熔體腰
17．．．界面
18．．．熔體頸
19．．．檔板
20．．．噴嘴
21．．．相機
22．．．控制器
第1圖所示為一種特別適合於實施該方法之裝置。
1．．．線圈架
2．．．線段
3．．．棒
4．．．相界面
5．．．線圈電極
6．．．通道開口
7．．．冷卻通道
8．．．管橋
9．．．圓盤
10．．．單晶
11．．．排出管
12．．．連續薄膜
13．．．顆粒
14．．．漏斗
15．．．第二感應加熱線圈
16．．．熔體腰
17．．．界面
18．．．熔體頸
19．．．檔板
20．．．噴嘴
21．．．相機
22．．．控制器

Claims (5)

  1. 一種製造半導體材料之單晶之方法，包含：在一具有由該半導體材料所構成之排出管(run-off tube)的圓盤上，藉由一第一感應加熱線圈熔化該半導體材料之顆粒；由該等經熔化之顆粒形成一熔體，其係以一熔體頸(melt neck)和一熔體腰(melt waist)之形式自該排出管延伸至一相界面(phase boundary)；利用一具有開口之第二感應加熱線圈將熱量傳送至該熔體，該熔體頸係穿越過該開口；以及於該相界面處進行該熔體之結晶作用，包含將一冷卻氣體傳送至該排出管及該熔體頸處，以控制該排出管與該熔體頸間之界面的軸向位置，從而在該界面向上移動至高於一上邊界位置時，增加該冷卻氣體之體積流量，使該界面向下移動，或在該界面向下移動至低於一下邊界位置時，減少該冷卻氣體之體積流量，使該界面向上移動。
  2. 如請求項1所述之方法，其中從第二感應加熱線圈中心處至該上邊界位置及該下邊界位置之距離係不超過10毫米。
  3. 如請求項1或2所述之方法，其中係透過使該第二感應加熱線圈朝向該熔體頸移動而軸向改變該界面之軸向位置。
  4. 一種製造半導體材料之單晶之裝置，包含：一用以接收該半導體材料之顆粒的圓盤，該圓盤係於其中心處具有一延伸至一排出管之開口；一用以熔化該圓盤上之顆粒的第一感應加熱線圈； 一用以將能量傳送至一由該經熔化之顆粒所形成的熔體之第二感應加熱線圈，該第二感應加熱線圈係於其中心處具有一熔體之通道開口；以及一用以將一氣體經控制地導入一位於該熔體之熔體頸與該排出管間之界面的區域內的設備，其係為了控制該界面之軸向位置，從而在該界面向上移動至高於一上邊界位置時，增加該冷卻氣體之體積流量，使該界面向下移動，或在該界面向下移動至低於一下邊界位置時，減少該冷卻氣體之體積流量，使該界面向上移動，其中該設備包含一相機、一控制器與一噴嘴。
  5. 如請求項4所述之裝置，其中一從第二感應加熱線圈中心處至該上邊界位置及該下邊界位置之距離係不超過10毫米。
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