TWI415789B - Method of forming self-assembled and uniform fullerene array on surface of substrate - Google Patents

Abstract

The present invention provides a method of forming a self-assembled fullerene array on the surface of a substrate, comprising the following steps: (1) providing a substrate; (2) pre-annealing the substrate at temperature range from 200 DEG C to 1200 DEG C in a vacuum system; and (3) providing powdered fullerene nanoparticles and depositing those powdered fullerene nanoparticles on the surface of the substrate by physical vapor deposition technology in the vacuum system, so as to form a self-assembled fullerene array on the surface of the substrate. The present invention also provides a fullerene embedded substrate prepared therefrom which has excellent field emission properties and can be used as a field emitter for any field emission displays. Finally, the present invention provides a fullerene embedded substrate prepared therefrom, which can be used to substitute for semiconductor carbides as optoelectronic devices and high-temperature, high-power, or high-frequency electric devices.

Description

Method for generating self-assembled and highly uniform carbon cluster molecular arrays on a substrate surface

The present invention relates to a method of producing a self-assembled and highly uniform array of carbon cluster molecules on the surface of a substrate. In particular, the present invention relates to novel methods of fabricating carbon cluster molecular array embedded substrates that can be used as field emitters, optoelectronic components, and high temperature, high power, high temperature or high frequency electronic components.

Prior to 1985, there were only two known knowledge of carbon, namely two-dimensional graphite and three-dimensional diamonds. Until Kroto and Smally et al. in a study on the physical properties of interstellar dust, using a powerful focused laser to generate a high temperature of 10,000 degrees Celsius on a graphite to vaporize it, in an attempt to obtain a linear molecule containing only carbon, to simulate A polymer of interstellar pure carbon molecules. The experimental results show that the yield of a new compound at room temperature is particularly high, the structure is quite stable, and the diameter is about 7.1. The dodecahedron; the twenty faces are hexagonal, the twelve faces are pentagons and are not connected to each other, conforming to the Isolated Pentagons Rule (IPR), and its sixty The vertices are each occupied by sixty carbon atoms. So in 1985, Kroto and Smally proposed the structure of a carbon hexapole, such as a football structure, by the concept of a dome designed by American architect Buck-minster Fuller. "Buckminster-fullerene", referred to as Buckyballs or carbon cluster molecules (Fullerenes; also known as fullerenes).

Thereafter, a carbon-like molecule similar to carbon sixty, such as carbon seventy or eighty-four carbon or a carbon cluster molecule composed of more carbon atoms, has been found successively in the shape of an ellipse or a long shape. The types of carbon clusters are as small as carbon 20, up to carbon nanotubes (CNT) or carbon 1,500. It has been found that the smallest and most structurally stable carbon cluster molecule is carbon thirty: consisting of six pentagons and five hexagons. One of the pentagons in the middle is surrounded by five hexagons, and the other five pentagons are connected to the hexagon, and the five pentagons on the periphery are not connected to each other. The pentagon rule. Carbon Thirty has ten unbonded covalent bonds located in five peripheral pentagons. As shown in Fig. 1, in the hexagonal form formed by adding a few carbon atoms to the unbonded covalent bond of carbon 30, a carbon tetrathroid which is slightly larger than carbon 30 can be formed, in the same manner. By increasing the number of hexagons on the unbonded covalent bond, larger carbon cluster molecules such as carbon fifty or even carbon nanotubes can be formed.

The carbon cluster molecule has the general formula Cn (n is an even number greater than 24). In general, n<40 is called a low carbon cluster molecule, n>40 is a high carbon cluster molecule, and n>400 is a giant carbon cluster molecule, such as a carbon nanotube. The structure of the carbon nanotubes is a tubular graphite and two hemispherical carbon cluster molecules as caps. In 1991, S. Ijinma of NEC Corporation of Japan accidentally discovered multiwall carbon nanotubes (MWCNTs) when studying carbon cluster molecules. Subsequently, single wall carbon nanotubes (SWCNTs) were discovered. Single-layer carbon nanotubes are known to have three structures: (1) an armchair (2) a zigzag; and (3) a helix. Depending on the width of the graphite layer and the direction of the crimp, the carbon nanotubes can exhibit different properties such as metals, semi-metals, and semiconductors.

High carbon cluster molecules or giant carbon cluster molecules have very special properties, such as low density, high strength, high toughness, flexibility, high surface area, large surface curvature, high thermal conductivity, conductivity specificity, etc., so attract many Researchers focus on developing possible applications, such as composites, microelectronics, flat panel displays, wireless communications, fuel cells, and lithium-ion batteries. Taking a carbon nanotube as an example, the carbon nanotube system is known because it has excellent electrical conductivity and has a tip surface area close to the theoretical limit (the smaller the radius of curvature of the tip is, the more concentrated the local electric field is). A good field emission material, which has a very low field emission voltage, can transmit a large current density, and is extremely stable in current, and is very suitable as an electron field emitter for a field emission display.

Carbon Nanotube Field Emission Display (CNT-FED) not only retains the image quality of traditional cathode ray tube displays, but also has the advantages of power saving and small size, combined with low carbon nanotubes. The characteristics of conduction electric field, high emission current density, high stability, etc., become a new flat panel display that combines the advantages of low driving voltage, high luminous efficiency, no viewing angle, large power saving, low cost, and the like.

At present, the carbon nanotube field emitters are mainly produced in the following two ways in the industry: First, a conductive paste or an organic binder containing a carbon nanotube is printed on a substrate into a pattern by a coating method, and is subsequently processed. The carbon nanotubes are allowed to emerge from the burial of the slurry to become an emitter; and secondly, the carbon nanotube pattern is grown directly on the substrate in a catalytic growth mode.

The first method has a low process cost and is easy to size, but it is difficult to control the direction of each carbon tube in the carbon nanotube array. The catalytic growth method generally uses a chemical vapor deposition (CVD) method to grow a carbon nanotube array as an emitter on a semiconductor substrate. The method comprises first etching a cathode plate into a pit having a fixed pore size, and filling a fine metal particle (generally metal iron, cobalt, nickel) into a fine hole by a CVD method, and cleaving the C ₂ H ₂ at a high temperature, so that A well-organized carbon nanotubes are grown along the holes, and a high-quality carbon nanotube emitter is produced in conjunction with a single mask and self-alignment technology developed by Prof. Milne et al. The drawback is that the process cost is high, and the ends of the carbon nanotubes are usually bent and interwoven. In order to form a good performance emitter tip, the carbon nanotube array is subjected to subsequent treatment to remove the rough surface of the carbon nanotube array to form a neat vertical emission tip, and the chemical vapor deposition method is used to make the large There are still some difficulties in terms of a highly uniform cathode emitter.

Therefore, the development of a carbon cluster molecular emitter process suitable for large-sized panels, neatly arranged and low in cost is still the direction of continuous efforts of the industry.

It is an object of the present invention to provide a method of generating a self-assembled and highly uniform array of carbon cluster molecules on a substrate surface comprising the steps of:

(1) providing a substrate;

(2) heating the substrate to a temperature of about 200 ° C to about 1200 ° C in a vacuum environment;

(3) providing a carbon cluster molecular nanopowder, and depositing the carbon cluster molecular nanopowder on the surface of the substrate by physical vapor deposition in the vacuum environment, thereby forming self-assembly on the surface of the substrate A highly uniform array of carbon cluster molecules.

It is still another object of the present invention to provide a carbon cluster molecular array embedded substrate thus produced which has excellent field emission properties and can be used as a field emitter in any field emission display.

It is still another object of the present invention to provide a carbon cluster molecular array embedded substrate thus produced which can be used as a photovoltaic element and a high temperature, high power, high temperature resistant or high frequency electronic component instead of a conventional carbonized semiconductor material.

The step (1) of the method of the present invention consists in providing a substrate on which carbon cluster molecules can be self-assembled. The substrate suitable for use in the present invention is not particularly limited, and includes, but not limited to, ruthenium, osmium, arsenic, aluminum, boron, tantalum nitride, zinc oxide, gallium nitride, boron nitride, gallium phosphide, gallium arsenide. Indium arsenide, indium phosphide, sapphire, zinc sulfide and cadmium sulfide. Preferably, a ruthenium (100) substrate or a ruthenium (111) substrate is used. More preferably, an n-type or p-type germanium (111) substrate is used.

Step (2) of the process of the present invention consists in heating the substrate to a temperature of from about 200 ° C to about 1200 ° C, preferably from about 400 ° C to about 1000 ° C, more preferably from about 700 ° C to about 900 ° C, under vacuum. The term "vacuum environment" is not specifically defined herein, and means that the degree of vacuum is about 1 atmosphere or less, preferably 1 × 10 ^-5 Pa or less, more preferably 1 × 10 ^-7 Pa or less. It is well known to those of ordinary knowledge.

The step (3) of the method of the present invention comprises depositing carbon cluster molecular nanopowder on the surface of the substrate by physical vapor deposition in the vacuum environment. Without wishing to be bound by theory, it is believed that since the substrate is preheated in a vacuum environment, the carbon cluster molecular nanopowder can self-assemble into a highly uniform array of carbon cluster molecules on the surface of the substrate. The "highly uniform carbon cluster molecular array" herein means that the carbon cluster molecular system is highly uniformly distributed on the substrate and most of them are closely arranged perpendicular to the surface of the substrate, and further, the formed carbon cluster molecular array has substantially the same Vertical height.

Physical vapor deposition methods suitable for use in the present invention include, but are not limited to, evaporation, molecular beam epitaxy, and sputtering. According to an embodiment of the present invention, the carbon cluster molecular nanopowder is deposited on the surface of the substrate by evaporation by evaporation in a vacuum atmosphere to a gas. The evaporation operation temperature is between about 200 ° C and about 1200 ° C, which is related to the type of carbon cluster molecules. In principle, the higher the number of carbon atoms, the higher the vapor deposition operating temperature. Taking carbon eighty-four as an example, the evaporation operation temperature is between about 550 ° C and about 750 ° C. If carbon 120 is used as the carbon cluster molecular source, the evaporation operation temperature is between about 600 ° C and about 900 ° C. If carbon three is used as the carbon cluster molecular source, the evaporation operation temperature is between about 700 ° C and about 1100 ° C. According to another embodiment of the present invention, the carbon cluster molecular nanopowder powder can also be deposited on the surface of the substrate in a vacuum environment by molecular beam epitaxy. In addition, the carbon cluster molecular nano powder can also be compressed into a target, and the carbon cluster molecules are deposited on the surface of the substrate in a vacuum environment by sputtering.

According to an embodiment of the invention, the step of pre-cleaning the substrate may optionally be included between step (1) and step (2). The pre-cleaning step includes washing the surface of the substrate with a solvent, and then heating the substrate in a vacuum environment to remove oxide layers and impurities on the surface of the substrate. The types of solvents suitable for use in the pre-cleaning step are well known to those of ordinary skill in the art, including, but not limited to, deionized water, ketones, alcohols, acids, bases, and combinations thereof.

The carbon cluster molecular nanopowder used in the present invention is commercially available. A variety of carbon cluster molecules well known to those of ordinary skill in the art can be used in the method of the present invention to form a self-assembled and highly uniform array on a substrate. Suitable carbon cluster molecules include, but are not limited to, carbon twenty, carbon twenty four, carbon thirty six, carbon forty, carbon forty two, carbon forty eight, carbon fifty, carbon fifty five, carbon sixty, Carbon sixty two, carbon sixty four, carbon sixty eight, carbon seventy, carbon seventy two, carbon seventy six, carbon seventy eight, carbon eighty, carbon eighty two, carbon eighty four, carbon nine X. Carbon 94, carbon 96, carbon 100, carbon 102, carbon 120, carbon 140, carbon 300, single-walled carbon nanotubes, double-walled nanocarbon Tube and multi-walled carbon nanotubes.

The method of the invention not only has simple process and low cost, but also has a high uniform distribution of carbon cluster molecular arrays, thereby obtaining a structure with high emission efficiency and small starting voltage, which is very suitable for use as a field emitter in a field emission display. Furthermore, since the carbon cluster molecules are closely arranged on the substrate, the formed structure is also less susceptible to attack by hydrogen, oxygen, and nitrogen (including atomic, ionic, or molecular states of their elements and their compounds).

On the other hand, when a semiconductor material is used as the substrate, the carbon cluster molecular array embedded substrate formed by the method of the present invention is also very suitable as a substitute for the conventional carbonized semiconductor material.

Carbonized semiconductor materials are one of the most important semiconductor materials in the new generation. They have many excellent physical and chemical properties, such as wide band, high power, high temperature resistance and high frequency. Taking strontium carbide as an example, it has excellent applications in various fields due to its many excellent physical and chemical properties. In terms of mechanical properties, due to its extremely high hardness (Mohs hardness 9.0), second only to diamond (10.0), much larger than 矽 (7.0) and gallium arsenide (~5.0-5.5), it can be applied to the reinforcement of composite materials. Materials, abrasive materials, cutting tools, pump linings and fiber reinforcement materials. In terms of thermal properties, tantalum carbide has a high thermal conductivity (3~5W/cm.K) at room temperature, higher than 矽(1.5W/cm.K) and gallium arsenide (0.5W/cm.K). ), and its high melting point (2830 ° C) characteristics, much higher than 矽 (1420 ° C) and gallium arsenide (1240 ° C), can withstand higher operating temperatures, thermal shock resistance, high temperature oxidation, Therefore, it can be applied to aircraft and automobile engine sensors, injection engine ignition devices, and turbine engine blades.

In terms of electrical properties, niobium carbide has a wide band (1.8-3.0 eV), greater than 矽 (1.12 eV) and gallium arsenide (1.42 eV), and can be impedance electron penetration, suitable as a photoexcited diode ( Light Emitting Diode, LED) luminescent material [3]. In addition, its high saturation drift velocity characteristics also promote the excitation of short-wavelength light by barium carbide, which is suitable for use as a blue light-emitting diode (blue LED) and a near-sun blind ultraviolet light detector ( Nearly solar blind UV photodetectors), high frequency power supplies and phased array radar systems. Tantalum carbide has a high collapse electric field (2.2~4 x 10 ⁶ V/cm), much higher than 矽 (2.5 x 10 ⁵ V/cm) and gallium arsenide (3x 10 ⁵ V/cm), which can be applied at high packing density. (high device packing density) on the integrated circuit. In addition, tantalum carbide has high power, high dielectric constant and other characteristics, which can improve conversion power and reduce energy consumption. It can be applied to Schottky diodes and metal oxide half field effect transistors (Metal-Oxide- Semiconductor Field-Effect Transistor (MOSFET), high-frequency MESFET components, Junction Field Effect Transistor (JFET), Bipolar Junction Transistor (BJT), PiN diodes, IGBT Insulated Gate Bipolar Transistors (IGBTs), high-power and high-voltage rectifiers and solar cell films have great potential for the application of optoelectronic components and high-temperature electronic components.

However, conventional carbonized semiconductor materials are not only complicated in the preparation process, but also have too many defects on the surface of the substrate to cause excessive resistance and poor thermal conductivity, so that the manufactured device is not effective.

The carbon cluster molecular array embedded substrate formed by the method of the present invention not only has the advantages of conventional carbonized semiconductor materials (for example, high energy bandgap and high breakdown voltage), but also avoids conventional carbonized semiconductors. The hole effect of the product is very suitable as a substitute for the conventional carbonized semiconductor material, and is used as a photovoltaic element and high temperature, high power, high temperature resistant or high frequency electronic components.

The following examples are intended to illustrate the invention and are not intended to limit the scope of the invention. Modifications and variations that may be readily made by those skilled in the art are within the scope of the disclosure of the present disclosure and the scope of the appended claims.

Example

(1) An n-type germanium (111) substrate is provided.

(2) The ruthenium substrate was sequentially placed in deionized water, acetone, and methanol solution to be ultrasonically washed.

(3) Slowly heat the crucible substrate to about 600 ° C in an ultra-high vacuum chamber (~1x10 ^-8 Pa) and stay at this temperature for 6 to 12 hours. The crucible substrate is then slowly heated to about 1250 ° C, left for 10 seconds to 5 minutes, and then cooled to room temperature to remove the oxide layer on the surface and the dirty material. The entire process is carried out in an ultra-high vacuum chamber.

(4) The crucible substrate is slowly heated to about 700 ° C to about 900 ° C in an ultra-high vacuum chamber, and the substrate is maintained at this temperature.

(5) A commercially available carbon eighty-nano-nano powder (Aldrich Chem. Co.) having a purity of 98% was heated in an ultra-high vacuum chamber to a temperature of about 550 ° C by a vapor deposition gun (Vacweld Miniature K-Cell). 750 ° C. Subsequently, the carbon eighty-nano-nano powder is vertically vapor-deposited on the surface of the crucible substrate in a range of 4 to 10 cm from the crucible substrate within 1 to 40 minutes, so that carbon 84 is self-deposited on the surface of the crucible substrate. Assembled to form a highly uniform array, as shown in Figure 2.

Test methods and results

(1) Distribution uniformity assessment

Three-dimensional analysis of the eighty-four carbon arrays prepared in the above examples was carried out using a scanning tunneling microscope (STM), and the results are shown in Figs. The STM photo shows that the carbon eighty-four series is highly evenly distributed on the ruthenium substrate. Furthermore, the profile analysis also shows that most of the carbon eighty-four series are closely aligned perpendicular to the surface of the tantalum substrate, and that the formed array of carbon eighty-four has a substantially uniform vertical height.

In addition, since the carbon eighty-four is closely arranged on the substrate, the formed tantalum carbide substrate is also less susceptible to attack by hydrogen, oxygen and nitrogen (including atomic states, ionic states or molecular states of the elements and their compounds).

(2) Evaluation of emission characteristics

Starting voltage

The I-V curve was measured for the carbon eighty-four array prepared in the above example using STM, and the results are shown in Fig. 6. The curves shown in the figure are for the measurement of the white X point. As can be seen from Fig. 6, the starting voltage is only about 1.36V.

Field emission efficiency

According to the field emission quantum theory, it is known that in the absence of an applied electric field, the electrons in the conductor must have sufficient energy to have the opportunity to cross the potential barrier to the vacuum side of the other end, but the spatial extent extended by this energy barrier When it is very narrow, if a tiny electric field is added to change the shape of the energy barrier, it can drive some electrons to cross the energy barrier and appear at the other end of the energy barrier. Since the strength of the electric field directly affects the current of the field emission, when the operating voltage of the component is increased, the electric field is increased. At this time, the potential energy barrier required for the electron is reduced, so the current obtained is increased, but this does not match. Low pressure operation desired by the industry. Therefore, if an object can be made to have a tip shape, a higher electric field at the tip end can obtain a lower starting electric field (Eon) and a higher starting current density (Jon). According to Fowler-Nordheim theory, the electric field and current density are plotted as ln(J/E2) versus 1/E (that is, FN plot). If the field emission current is in a straight line relationship, this can be used as a field emission electron. Based on the calculation of the Field Enhancement Factor (beta), the field emission efficiency is known.

From the characteristics of the current density versus electric field and the F-N characteristic of the field emission, the eighty-four arrays of carbon produced in the embodiment of the present invention have relatively excellent field emission efficiency.

(3) Band gap assessment

The measured current and voltage characteristic map is converted into the dI/dV characteristic diagram shown in Fig. 13, and the energy band gap can be measured to be about 3.09 eV. It can be seen that the eighty-four carbon arrays produced by the embodiments of the present invention do have quite excellent broad band gap characteristics.

(4) Crash electric field assessment

The field emission under vacuum converts the measured current and voltage characteristic map into the FN characteristic diagram shown in Fig. 8, and the collapse electric field can be measured to be about 4.1 x ^{10 6} V/cm. From this, it is understood that the eighty-four carbon arrays produced by the embodiments of the present invention do have quite excellent high breakdown electric field characteristics.

The method of the invention not only has simple process and low cost, but also proves through experimental data that the prepared carbon cluster molecular array has a highly uniform distribution, good emission characteristics, small initial voltage, high bandgap, and collapse. The high breakdown voltage and the hole effect of the carbonized semiconductor product are very suitable for use as a field emitter in field emission displays or as a substitute for conventional carbonized semiconductor materials. It is believed that the method of the present invention is capable of significant improvements and breakthroughs in the field of application of field emission displays and carbonized semiconductor materials.

While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

Figure 1 is a schematic diagram of the molecular growth of carbon clusters.

2 and 3 are photographs (40x40 nm ² ) and cross-sectional analysis views of a scanning tunneling microscope (STM) of an eighty-four array of carbon obtained in an embodiment of the present invention.

4 is a STM photograph (20× ²⁰ nm ² ) of a carbon eighty-four array prepared according to an embodiment of the present invention and a cross-sectional analysis diagram thereof.

5 is a STM photograph (12.5×12.5 nm ² ) of a carbon eight-four array prepared according to an embodiment of the present invention and a cross-sectional analysis diagram thereof.

Fig. 6 is a graph showing the current versus voltage obtained by measuring the carbon eighty-four arrays obtained in the examples of the present invention by STM under vacuum.

Figure 7 is a graph showing the current density versus electric field of field emission of an eighty-four array of carbons prepared by an embodiment of the present invention under vacuum using STM. The starting current density and the starting electric field were 100 A/cm ² and 1422 V/μm, respectively.

Figure 8 is a graph showing the FN characteristics of the field emission of the eighty-fourth carbon array obtained by the embodiment of the present invention under vacuum, with a field enhancement factor β of about 51.9 and a collapse electric field of about 4.1 x ^{10 6} V/cm.

Fig. 9 is a graph showing the characteristics of current density versus electric field of field emission of an eighty-four array of carbons obtained by an atomic force microscope (AFM) measurement at an atmospheric pressure. The starting current density and the starting electric field were 0.01 A/cm ² and 8035 V/μm, respectively.

Figure 10 is a graph showing the F-N characteristics of the field emission of an eighty-four array of carbons obtained by an AFM measurement at an atmospheric pressure in an embodiment of the present invention. Its field enhancement factor β is about 4.4.

Figure 11 is a graph showing the measurement of the current density versus electric field of the field emission of the eighty-four array of carbons produced in the examples of the present invention under atmospheric pressure. The starting current density and the starting electric field were 1 μA/cm ² and 1.12 V/μm, respectively.

Figure 12 is a graph showing the FN characteristics of the field emission of the eighty-four array of carbon produced in the embodiment of the present invention under atmospheric pressure. Its field enhancement factor β is approximately 4.3x10 ³ .

Figure 13 is a graph showing the characteristics of dIdV obtained by measuring the carbon eighty-four arrays obtained in the examples of the present invention by STM under vacuum, and measuring the band gap of about 3.09 eV.

(no component symbol description)

Claims (19)

A method for generating a self-assembled, highly uniform carbon cluster molecular array on a substrate surface, comprising the steps of: (1) providing a substrate; (2) heating the substrate to a temperature of about 600 ° C to about 900 ° C in a vacuum environment; And (3) embedding carbon cluster molecular nanopowder in the surface of the substrate by physical vapor deposition in the vacuum environment to form a self-assembled and highly uniform array of carbon cluster molecules on the surface of the substrate. The method of claim 2, wherein in step (2) the substrate is heated to between about 700 ° C and about 900 ° C. The method of claim 1 or 2, wherein the substrate is selected from the group consisting of ruthenium, osmium, arsenic, aluminum, boron, tantalum nitride, zinc oxide, gallium nitride, boron nitride, gallium phosphide, gallium arsenide, arsenic A group of indium, indium phosphide, sapphire, zinc sulfide, and cadmium sulfide. The method of claim 3, wherein the substrate is a (100) substrate or a germanium (111) substrate. The method of claim 4, wherein the substrate is an n-type or p-type germanium (111) substrate. The method of claim 1 or 2, wherein the vacuum environment in the step (2) is an environment having a degree of vacuum of about 1 × 10 ^-5 Pa or less. The method of claim 1 or 2, wherein the physical vapor deposition method in the step (3) is an evaporation method, a molecular beam epitaxy method, and a sputtering method. The method of claim 7, wherein the physical vapor deposition method is an evaporation method. The method of claim 8, wherein the evaporation operation temperature is between about 200 ° C and about 1200 ° C. The method of claim 9, wherein the evaporation operation temperature is between about 550 ° C and about 750 ° C. The method of claim 9, wherein the evaporation operation temperature is between about 600 ° C and about 900 ° C. The method of claim 9, wherein the evaporation operation temperature is between about 700 ° C and about 1100 ° C. The method of claim 7, wherein the physical vapor deposition method is molecular beam epitaxy. The method of claim 7, wherein the physical vapor deposition method is a sputtering method. The method of claim 1 or 2, further comprising the step of pre-cleaning the substrate between the step (1) and the step (2), comprising: cleaning the surface of the substrate with a solvent, and then heating the substrate in a vacuum environment to remove the surface of the substrate Oxide layer and impurities. The method of claim 15, wherein the solvent is selected from the group consisting of deionized water, ketones, alcohols, acids, bases, and combinations thereof. The method of claim 1 or 2, wherein the carbon cluster molecule is selected from the group consisting of carbon twenty, carbon twenty four, carbon thirty six, carbon forty, carbon forty two, carbon forty eight, carbon fifty, carbon fifty 5. Carbon 60, carbon 62, carbon 64, carbon 68, carbon 70, carbon 72, carbon 76, carbon 78, carbon 80, carbon 82, carbon Eighty-four, carbon ninety, carbon ninety-four, carbon ninety-six, carbon one hundred, carbon one hundred two, carbon one hundred twenty, carbon one hundred and forty, carbon three hundred, single-walled carbon nanotube , double-walled carbon nanotubes and more A group of wall-nanocarbon tubes. A carbon cluster molecular embedded substrate produced by the method of any one of claims 1 to 17. A field emitter comprising a carbon cluster molecular array embedded substrate as claimed in claim 18.