TWI415694B - Substrate processing device and processing method thereof - Google Patents

Abstract

Provided is a processing apparatus for processing a substrate by using a processing solution. The substrate processing apparatus is provided with a nano bubble generating means, which generates nano bubbles and mixes the nano bubbles in the processing solution; a processing solution supplying means for supplying the processing solution including the nano bubbles generated by the nano bubble generating means onto the board surface of the substrate; a pressurizing means which pressurizes the nano bubbles included in the processing solution supplied onto the board surface of the substrate by the processing solution supplying means and crushesthem with pressure with the board surface of the substrate.

Description

Substrate processing device and processing method Field of invention

The present invention relates to a processing apparatus and a processing method for processing a substrate such as a glass substrate for a semiconductor wafer or a liquid crystal display device by a processing liquid.

Background of the invention

When manufacturing a semiconductor device, a liquid crystal display device, or the like, there is a lithography process for forming a circuit pattern on a substrate such as a semiconductor wafer or a glass substrate. The lithography process is well known in which a resist is applied to the substrate, and light is irradiated onto the resist via a photomask formed with a circuit pattern.

Next, a series of steps of etching the portion where the resist is not irradiated to the light or irradiating the light, and repeatedly removing the removed portions are performed, thereby forming a circuit pattern on the substrate.

In the above-described series of steps, if the substrate is contaminated, the circuit pattern cannot be formed precisely, which may cause a defective product. Therefore, when the circuit pattern is formed on the substrate, the organic substance or the resist remaining on the substrate is removed, and the substrate is treated with the treatment liquid for the purpose of the treatment. Pure water, an etching liquid, a peeling liquid, a developing liquid, and the like are known as a treatment liquid for treating a substrate.

Recently, not only the pressurized gas is used to pressurize the treatment liquid, but also the gas is made into fine bubbles and mixed in the treatment liquid, thereby improving the treatment efficiency of the treatment liquid. Patent Document 1 discloses a processing apparatus which enhances processing efficiency by mixing microbubbles in a treatment liquid.

That is, the processing apparatus shown in Patent Document 1 has a mixing pump that introduces pure water and nitrogen. Pure water and nitrogen are mixed in a gas-liquid mixing pump and sent to a cyclotron. The cyclotron accelerates the swirling of pure water and nitrogen to form a gas-liquid two-layer flow, which is then sent to the disperser. The disperser shears the gas-liquid two-layer flow that is sent in a hydrodynamic manner to form a micro-bubble of nitrogen. Then, pure water containing microbubbles is sent to the treatment tank to treat the substrate.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-179765

In general, the microbubbles disclosed in Patent Document 1 have a diameter of 10 to 100 μm. Since the microbubbles have a large diameter, they are buoyant and rise in the liquid, and then they are cleaved and disappeared at the liquid surface.

On the other hand, since the internal pressure of the nanobubble having a diameter of, for example, 1 μm or less is low, it is hardly affected by buoyancy in water. Therefore, it will float in the liquid and gradually shrink by external pressure. When the nanobubbles are shrunk, the surface charge is concentrated as the surface area is reduced, so that an extremely strong electric field is formed.

Since the strong electric field of the nanobubbles activates the nanobubbles, it has a strong influence on the liquid in which the nanobubbles are present. Therefore, if the processing liquid of the processing substrate contains nanobubbles, the treatment effect of the processing liquid on the substrate can be greatly improved.

The processing apparatus shown in Patent Document 1 is a method in which a gas-liquid mixing pump is used to mix nitrogen gas with pure water, and then accelerated by a cyclotron to be swirled to form a gas-liquid two-layer flow, and a hydrodynamic method using a disperser. To cut off the gas-liquid two-layer flow, and form micro-bubbles of nitrogen.

That is, in the processing apparatus disclosed in Patent Document 1, even if a gas-liquid mixing pump, a cyclotron, and a disperser can be used, a diameter of 10 to 100 can be formed. The microbubbles of about μm are also preliminarily mixed with nitrogen and pure water using a cyclotron to form a gas-liquid two-layer fluid, and then sheared by a disperser in a hydrodynamic manner.

Therefore, since nitrogen gas is dissolved in pure water in the cyclotron, even if the gas-liquid two-layer fluid formed in the cyclotron is sheared by a disperser and hydrodynamically, not only the microbubbles cannot be efficiently produced, but also the patent In Document 1, there is also no disclosure of nanobubbles or the like which are advantageous for substrate processing than microbubbles.

Summary of invention

The present invention provides a processing apparatus and a processing method for a substrate which can efficiently produce nanobubbles having a smaller diameter than microbubbles and which can improve the processing efficiency of the substrate.

In order to solve the above problems, the present invention provides a processing apparatus for a substrate, which comprises: a nano bubble generating mechanism for generating a nanobubble generating means by mixing a nanobubble to the processing liquid; The processing liquid supply means supplies the processing liquid containing the nanobubbles generated by the nano bubble generating means to the substrate surface; and the pressurizing means supplies the processing liquid supply means to the substrate The nanobubbles contained in the treatment liquid on the surface of the sheet are pressurized, and the bubbles are crushed on the surface of the substrate.

Moreover, the present invention provides a method for processing a substrate, which comprises: a mixing step of generating a nanobubble to mix the nanobubbles with the treatment liquid; and a supply step of containing the naphthalene Rice gas The processing liquid supplied to the substrate is supplied to the substrate surface; and the crushing step pressurizes the nano-bubble contained in the processing liquid supplied to the surface of the substrate to cause the air bubbles to be crushed on the surface of the substrate.

Simple illustration

Fig. 1 is a schematic block diagram showing a processing apparatus according to a first embodiment of the present invention.

Figure 2 is a cross-sectional view along the axial direction of the gas shear.

Figure 3 is a side view of the gas cutter viewed from the rear end.

Fig. 4 is a schematic block diagram showing a spiral processing apparatus according to a second embodiment of the present invention.

Fig. 5 is a schematic block diagram showing a spiral processing apparatus according to a third embodiment of the present invention.

Fig. 6 is a schematic block diagram showing a horizontal conveyance processing apparatus according to a fourth embodiment of the present invention.

Fig. 7 is a schematic block diagram showing a horizontal conveyance processing device according to a fifth embodiment of the present invention.

Fig. 9 is a view showing a schematic configuration of a horizontal transport processing device according to a sixth embodiment of the present invention.

Fig. 9 is a schematic block diagram showing a horizontal conveyance processing apparatus according to a seventh embodiment of the present invention.

Fig. 10 is a schematic block diagram showing a horizontal conveyance processing apparatus according to an eighth embodiment of the present invention.

Detailed description of the preferred embodiment

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 to 3 show a first embodiment of the present invention, and Fig. 1 is a schematic configuration diagram showing a processing apparatus having a processing tank 1. A gas cutter 2 constituting a nano bubble generating mechanism is disposed in the processing tank 1. As shown in Fig. 2, the gas cutter 2 has a hollow body 4 in which a shear chamber 3 is formed inside.

One end of the shearing chamber 3 communicates with the injection port 5 formed in the axial end surface of the main body 4, and the other end communicates with the gas supply port 6 formed at the rear end surface of the main body 4. The shearing chamber 3 is formed by a rear space portion 3a and a front space portion 3b, and the rear space portion 3a is formed by a truncated cone that is connected to the gas supply port 6 and has a diameter extending toward the center of the rear end portion. The front space portion 3b is formed in a truncated cone shape in which the rear space portion 3a is gradually reduced in diameter toward the front end, and is formed in the boundary portion between the rear space portion 3a and the front space portion 3b in the shear chamber 3 A liquid supply port 7 having a peripheral surface open outside the body 4.

The gas supply port 6 is provided with a metal cover 11 for gas swirling. The gas swirling metal cover 11 is connected to the other end of the gas supply pipe 13 whose one end is connected to the gas supply pump 12. The first switching valve 14 is provided in the middle of the gas supply pipe 13. The suction side of the gas supply pump 12 is connected to a gas supply source such as a high pressure pump (not shown). The gas supply is used to supply oxygen.

Although the metal cover 11 for gas swirling is not shown in detail, the metal cover 11 for gas swirl has a spiral groove formed therein. When the first on-off valve 14 is opened, the oxygen supplied from the gas supply pump 12 is swirled through the gas supply pipe 13, and then the space portion 3a is turned forward by the shear chamber 3 The space portion 3b is ejected, and the gas chamber portion 15 for oxygen gas is formed as indicated by a broken line in Fig. 2 in the shear chamber 3. In this embodiment, the spiral groove of the metal cover 11 for gas swirling is configured such that the gas swirls in the counterclockwise direction as viewed from the rear end side of the main body 4. The swirling direction of the gas is as indicated by the arrow a in Fig. 2.

The liquid supply metal cover 16 is inclined at an angle of θ1 toward the clock direction with respect to the circumferential direction of the main body 4 as shown in Fig. 3, and is connected to the liquid at an angle of θ2 toward the rear end side with respect to the axial direction as shown in Fig. 2 . Supply port 7.

The liquid supply metal cover 16 is connected to the other end of the liquid supply pipe 18, and one end of the liquid supply pipe 18 is connected to the liquid supply pump 17. A second on-off valve 19 is provided in the middle of the liquid supply pipe 18. The suction side of the liquid supply pump 17 is connected to the bottom of the processing tank 1. The treatment tank 1 contains pure water L as a treatment liquid.

When the second switching valve 19 is opened, the pure water L supplied from the liquid supply pump 17 to the gas shearing device 2 passes through the liquid supply pipe 18 and the inclination angle θ1 of the metal supply cover 16 is supplied by the liquid. In the same manner as the oxygen gas, it is swirled in the counterclockwise direction, and is supplied to the direction in which the front space portion 3b side travels by the inclination angle θ2 of the liquid supply metal cover 16.

By the gas supply pump 12, the supply pressure of oxygen is set to P1, and the supply pressure of the pure water L is set to P2 by the liquid supply pump 17, and P1 < P2 is set. Thereby, the relationship between the swirling speed V1 of the oxygen supplied to the shearing chamber 3 of the main body 4 and the swirling speed V2 of the pure water L is V1 < V2.

In this embodiment, the supply pressure of the oxygen supply pressure P1 and the pure water L The P2 system is set such that the oxygen swirling speed V1 is 400 rotations per second, and the pure water L has a swirling speed V2 of 600 rotations per second.

The oxygen supplied from the rear end of the shear chamber 3 in the axial direction is a swirling gas cavity portion 15 as indicated by an arrow a, and travels toward the injection port 5. The outer peripheral surface of the gas cavity portion 15 in which the pure water L supplied from the outer peripheral surface of the shearing chamber 3 is swirled is swirled, and travels toward the injection port 5. The direction of swirling of pure water is as indicated by arrow b in Fig. 2.

The oxygen swirling speed V1 is set to be slower than the swirling speed V2 of the pure water L. Therefore, by the difference in the speed of the swirl between the oxygen and the pure water L, the oxygen is sheared by the pure water L in a hydrodynamic manner, and the nano-bubble of oxygen is generated by the shearing action. Further, pure water L containing oxygen-containing nanobubbles is ejected from the ejection opening 5 at the front end of the above-described shearing chamber 3. Further, even if the swirling speed V1 of oxygen is set to be faster than the swirling speed V2 of the pure water L, oxygen nanobubbles can be generated by the shearing action of hydrodynamics.

The pure water L supplied to the above-described shearing chamber 3 is swirled around the gas cavity portion 15 of the oxygen in the shearing chamber 3, and the oxygen gas is sheared hydrodynamically. That is, since oxygen is sheared in the shearing chamber 3 to generate nanobubbles before the oxygen is dissolved in the pure water L after the oxygen is mixed with the pure water L, the generation efficiency of the nanobubbles can be improved.

The front space portion 3b of the shearing chamber 3 is formed in a conical shape that is reduced in diameter toward the ejection port 5. Therefore, the oxygen supplied to the cutter 3 and the pure water L are reduced in volume as the front space portion 3b travels, so the pressure reduction is limited.

Therefore, the hydrodynamic shearing action of pure water L shearing oxygen maintains a substantially uniform state in the axial direction of the shear chamber 3. That is, As the oxygen and the pure water L travel in the shearing chamber 3, the generation efficiency of the nanobubbles can be prevented from being lowered.

As shown in Fig. 1, the substrate W to be cleaned is supplied to the position opposed to the ejection port 5 in a state of being immersed in the pure water L filled in the processing tank 1, and is held up substantially vertically. State. Thereby, the pure water L containing the nanobubbles sprayed by the ejection openings 5 is ejected toward the surface of the substrate W.

Further, the interval between the substrate W and the ejection port 5 is set such that the pure water L ejected from the ejection port 5 acts on the plate surface of the substrate W with a predetermined pressure. Further, since the pure water L injected from the ejection opening 5 acts on the entire substrate W, the gas shearer 2 is along the vertical direction and the amplitude direction of the plate surface of the substrate W by a driving mechanism (not shown). drive.

Since the inner cell has a low internal pressure as described above, it floats in the liquid and shrinks due to the external pressure, and is activated by the surface electric charge to form an extremely strong electric field. Thereby, when the pure water L containing the nanobubbles is sprayed toward the substrate W, the substrate W can be efficiently and surely washed. In particular, when the treatment liquid is pure water L and the gas is oxygen, the pure water L containing the oxygen-containing nanobubbles can be efficiently washed to remove the organic matter adhering to the substrate W.

The gas and the treatment liquid supplied to the gas cutter 2 include pure water and ozone, etching liquid and oxygen or air, etching liquid, nitrogen or carbon dioxide, stripping liquid and oxygen, stripping liquid and carbon dioxide, stripping liquid and nitrogen gas, and development. The liquid is combined with oxygen, a developing solution and nitrogen.

By combining pure water and ozone, not only the substrate W can be washed with pure water, but also the substrate W can be forced by the ozone bubble of ozone. The role of the oxide film and the effect of improving the wettability of the substrate.

According to the combination of the etching solution and oxygen or air, not only the etching action by the etching liquid, but also the oxygen bubbles of oxygen or air, the cationic substances generated by the etching action caused by the etching liquid are generated by the surface of the nanobubbles. The negative ions are sorbed, and the anionic substance is prevented from reattaching to the substrate W due to repulsion.

Further, since the nanobubbles have the property of absorbing metal ions or the like, the metal ions can be removed in the same manner. Further, the reactivity of the etching liquid to the substrate W, that is, the etching action, can be enhanced by the nanobubbles of the activated oxygen.

According to the combination of the etching solution and nitrogen or carbon dioxide, the cationic substance generated by the etching acts on the nanobubbles due to the negative ions generated on the surface of the nanobubble, and the anionic substance is prevented from repelling and adheres to the substrate W.

The uniformity of the etching treatment can be improved by using an etching solution containing a nanobubble, regardless of the kind of the gas, and by the Brownian motion of the nanobubbles to generate fluidity in the etching liquid.

According to the combination of the stripping liquid and the oxygen, not only the stripping liquid removes the resist, but also has a re-adhesion preventing effect, and the resist which is peeled off from the substrate W is negatively charged by the action of the oxygen bubble of oxygen. Further, adhering to the substrate W can also enhance the reactivity of the peeling liquid to the substrate W, that is, the peeling action, by the nanobubbles of the activated oxygen.

According to the combination of the stripping solution and the carbon dioxide, not only the stripping liquid removes the resist removal effect, but also prevents the strong alkalization by the second oxidation. The carbon nano-bubble prevents the strong alkali solution generated by the reaction of the stripping liquid and water from damaging the wiring pattern such as aluminum.

According to the combination of the stripping liquid and the nitrogen gas, not only the stripping liquid removing resist is removed, but also the oxygen bubbles become difficult to enter the stripping liquid by the nanobubbles of nitrogen gas, so that the stripping liquid is prevented from deteriorating early.

According to the combination of the developing solution and the oxygen, not only the imaging effect of the developing liquid but also the reactivity of the developing liquid, that is, the imaging effect on the substrate W, can be enhanced by the nanobubbles of oxygen.

The combination of the developing solution and the nitrogen gas not only has the developing effect of the developing liquid, but also makes it difficult for the oxygen to enter the developing liquid by the nanobubbles of nitrogen gas, thereby preventing the early deterioration of the developing liquid. effect.

By using a liquid containing nano bubbles regardless of the type of gas, the negative ions generated on the surface of the nanobubbles, the cationic material that has been imaged will absorb the nanobubbles, prevent anionic substances, and prevent reattachment to the substrate. W.

By using an alkali-based lotion containing ammonia, ozone or hydrogen gas, ammonia water or calcium hydroxide water, the negative ions on the surface of the nanobubble, the cationic substances peeled off from the substrate W will absorb the nanobubbles, The anionic substance is repelled to prevent reattachment to the substrate W.

When the fine pattern of 90 nm or less is washed by pure water or isopropyl alcohol (IPA), insufficient washing or pattern collapse occurs, but if it is washed with pure water containing nitrogen or carbon dioxide, it is pure. The surface tension of water is lowered to improve the effect of interfacial activity, so that insufficient washing or pattern collapse can be prevented.

Further, when the substrate W is processed by the combination of the respective gases and the respective treatment liquids, the treatment liquid used in the combination is accommodated in the treatment tank 1.

In the above-described embodiment, the gas supplied to the shear chamber of the gas shearer and the pressure of the treatment liquid are set by the gas supply pump and the liquid supply pump, respectively, but the pressure adjustment valve may be provided in the gas supply pipe and the liquid supply pipe. And adjusting the supply pressure of the gas and the treatment liquid by the pressure regulating valves.

Further, although the gas cutter is disposed in the treatment tank to process the substrate, the gas shear may be attached to the swing arm provided above the rotary table of the spiral processing device that rotates the substrate and processes the substrate. . Further, after the substrate is rotated and the swing arm is rotated, the gas shearer is moved outward from the center portion in the radial direction of the substrate, and the treatment liquid containing the nanobubbles is sprayed toward the substrate surface. Process the substrate.

Fig. 4 is a view showing a second embodiment of the present invention. In this embodiment, the substrate W composed of a rectangular glass substrate used in a liquid crystal display device is held by the turntable 22 of the spiral processing device 21. The turntable 22 is housed in the cup 23 and is driven to rotate by the motor 25 via the spindle 24.

The rotary table 22 has four support arms 26 (only two are shown), and a support pin 27 for supporting the lower surface of the corner portion of the substrate W is provided at the front end of each support arm 26, and is engaged with One of the side faces of the corner portion is a pair of engaging pins 28 (only one is shown).

The ultrasonic nozzle body 31 is provided above the substrate W held by the turntable 22. The ultrasonic nozzle body 31 is supplied with a treatment liquid containing nano bubbles generated by the gas cutter 2 as the nano bubble generating mechanism shown in the first embodiment. The ultrasonic nozzle body 31 is internally provided with a vibration (not shown) The plate, and the vibrating plate imparts ultrasonic vibration to the processing liquid supplied to the inside.

The ultrasonic nozzle 31 is attached to the front end of the swing arm 32, and the swing arm is vertically driven to be driven in the horizontal direction above the substrate W held by the turntable 22. Thereby, the processing liquid sprayed by the ultrasonic nozzle body 31 can be uniformly supplied to the entire plate surface of the substrate W.

According to the spiral processing apparatus 21 configured as described above, the treatment liquid containing the nanobubbles is supplied to the substrate W through the ultrasonic nozzle body 31. Therefore, when the processing liquid is supplied from the ultrasonic nozzle body 31 to the substrate W, the nanobubbles contained in the processing liquid are crushed on the surface of the substrate W due to the ultrasonic vibration.

When the nanobubble is crushed, it will cause cavitation due to its crushing, and it will induce a wave due to its cavitation. Thereby, the handling action depending on the kind of the treatment liquid used for the substrate W can be greatly promoted.

Fig. 5 is a view showing a third embodiment of the invention. This embodiment is a modification of the second embodiment. The treatment liquid containing the nanobubbles generated by the gas cutter 2 is supplied to the treatment liquid supply nozzle 35. The processing liquid supply nozzle 35 is disposed to supply the processing liquid to the plate surface of the substrate W held by the turntable 22 toward the rotation center.

On the other hand, the liquid system supplied from the ultrasonic nozzle body 31 of the swing arm 32 is supplied with pure water. The pure water supplied to the ultrasonic nozzle body 31 is supplied to the plate surface of the substrate W by ultrasonic vibration.

According to this configuration, the treatment liquid containing the nanobubbles supplied to the surface of the substrate W by the treatment liquid supply nozzle 35 is subjected to the ultrasonic vibration imparted by the pure water sprayed from the ultrasonic nozzle body 31.

Thereby, the nanobubbles contained in the treatment liquid are supplied to the substrate W in the treatment liquid. After being crushed by the ultrasonic vibration of the pure water, it will cause cavitation due to its crushing, and induce the rushing wave due to its cavitation. Thereby, the handling action in accordance with the type of the treatment liquid applied to the substrate W is greatly promoted.

Fig. 6 is a fourth embodiment of the present invention. In this embodiment, the substrate W is horizontally transported and processed by the horizontal transport processing device 36 instead of the spiral processing device 21. The horizontal conveyance processing device 36 has a plurality of conveyance rollers 37 horizontally arranged at predetermined intervals to convey the substrate W in the direction of the arrow.

On the upper surface of the substrate W to be transported, an elongated ultrasonic nozzle body 31A as an ultrasonic vibration imparting mechanism is disposed in a width direction orthogonal to the transport direction of the substrate W. The ultrasonic nozzle body 31A supplies a treatment liquid containing nano bubbles generated by the gas cutter 2.

In this way, since the treatment liquid containing the nanobubbles to which the ultrasonic vibration is applied can be supplied to the upper surface of the substrate W that is horizontally conveyed across the entire length in the width direction, the nanobubbles in the treatment liquid supplied to the upper surface of the substrate W are provided. When the substrate W is crushed, it will cause cavitation due to its crushing, and the chopping wave is induced by its cavitation. Thereby, the substrate W can be greatly promoted and treated in accordance with the type of the treatment liquid.

Fig. 7 shows a fifth embodiment of the invention in which the substrate W is transported by the horizontal transport processing device 36 and processed. This embodiment is a modification of the fourth embodiment shown in Fig. 6, and pure water as a liquid to which ultrasonic vibration is imparted is supplied from the ultrasonic nozzle body 31A toward the surface of the substrate W.

The shower tube member 41 as the processing liquid supply nozzle is disposed on the upstream side in the transport direction of the substrate W in the width direction of the substrate W along the ultrasonic nozzle body 31A. The shower tube 41 supply contains a gas shear 2 The treatment liquid of the nano bubble is supplied to the upper surface of the substrate W.

According to this configuration, when the treatment liquid containing the nanobubbles is supplied to the surface of the substrate W by the shower tube member 41, the treatment liquid is subjected to the ultrasonic vibration imparted to the pure water supplied from the ultrasonic nozzle body 31A. And it was crushed.

When the nanobubble is crushed, it will cause cavitation due to its crushing, and it will induce the rushing wave due to its cavitation. Thereby, the processing action on the substrate W and depending on the kind of the treatment liquid can be greatly promoted.

Fig. 8 shows a sixth embodiment of the invention in which the substrate W is transported by the horizontal transport processing device 36 and processed. This embodiment is opposed to the upper surface of the substrate W horizontally conveyed by the transport roller 37, and a plurality of shower tubes 41 are disposed.

Each of the shower tubes 41 has a length that covers the width direction of the substrate W over the entire length, and is spaced apart from the transport direction of the substrate W by a predetermined interval. On the other hand, an ultrasonic nozzle body 31A is disposed on a portion facing the shower tube 41 below the substrate W, and the ultrasonic nozzle system applies ultrasonic vibration to the pure water as a liquid and ejects toward the lower surface of the substrate.

According to this configuration, the processing liquid is supplied onto the upper surface of the substrate W by the plurality of shower tubes 41, and the pure water imparted with the ultrasonic vibration is supplied to the lower surface by the ultrasonic nozzle body 31A. Thereby, the ultrasonic vibration imparted to the pure water supplied to the lower surface acts on the nanobubbles contained in the treatment liquid supplied onto the upper surface of the substrate W, so that the ultrasonic bubbles contained in the treatment liquid are crushed by the ultrasonic vibration. .

When the nanobubbles are crushed, cavitation is caused by the crushing, and the chopping waves are induced by the cavitation. In this way, the base can be greatly promoted. The sheet W is carried out and is treated in accordance with the type of the treatment liquid.

Further, since the treatment liquid containing the nanobubbles is supplied to the upper surface of the substrate W, and the pure water imparted with the ultrasonic vibration is supplied to the lower surface of the substrate W to crush the nanobubbles contained in the treatment liquid, the substrate is supplied to the substrate. The treatment liquid above W can be diluted by pure water to prevent the treatment liquid from lowering the treatment effect on the substrate W.

Fig. 9 shows a seventh embodiment of the present invention in which the substrate W is transported and processed by the horizontal transport processing device 36. In this embodiment, the treatment liquid containing the nanobubbles generated by the gas cutter 2 is pressurized to a high pressure of 0.7 MPa or more by the pressure pump 42 as a pressurizing means. Then, the treatment liquid pressurized to a high pressure is supplied to the high-pressure shower pipe member 43 which is disposed on the upper surface of the horizontally-transferred substrate W and serves as a supply mechanism.

The treatment liquid containing the nanobubbles is supplied to the upper surface of the substrate W by the high pressure shower tube 43 at a high pressure. Thereby, when the treatment liquid collides with the plate surface of the substrate W at a high pressure, that is, when the treatment liquid is supplied to the substrate, the nanobubbles contained in the treatment liquid are crushed due to the pressure thereof.

When the nanobubble is crushed, it will cause cavitation due to its crushing, and it will induce a wave due to its cavitation. Thereby, the processing action on the substrate W and depending on the kind of the treatment liquid can be greatly promoted.

In the seventh embodiment, the horizontal transfer processing device 36 is used to convey and process the substrate W horizontally. However, the substrate W may be rotated and processed.

Fig. 10 shows an eighth embodiment of the invention in which the substrate W is transported and processed by the horizontal transport processing device 36. This embodiment is shown in Fig. 9. In a modification of the seventh embodiment, the plurality of shower tubes 44 for supplying the treatment liquid containing the nanobubbles generated by the gas cutter 2 are arranged at predetermined intervals along the width direction of the substrate W along the conveyance direction of the substrate W. It is placed on the substrate W for measurement. Further, the shower tube member 44 may be one.

Further, the high-pressure shower pipe member 45 for supplying the pure water to the substrate W and serving as the liquid ejecting mechanism is disposed on the upper surface side of the substrate W along the width direction of the substrate W, and is located on the substrate W more than the above-described shower tube member 44. In the downstream side of the conveyance direction, the pure water is different from the treatment liquid containing the high pressure nanobubbles of 0.7 MPa or more by the pressurizing pump 42a as the supply pressurizing means.

According to this configuration, when the treatment liquid is supplied to the upper surface of the substrate W by the plurality of shower tubes 44, the nano-bubble contained in the treatment liquid is supplied to the pure water pressure on the substrate W by the high-pressure shower tube 45 at a high pressure. Further, the high-pressure shower pipe 45 is disposed on the downstream side of the shower tube 44 in the conveying direction of the substrate W.

When the nanobubble is crushed, it will cause cavitation due to its crushing, and it will induce a wave due to its cavitation. Thereby, it is possible to promote the treatment of the substrate W in response to the type of the treatment liquid.

In each of the embodiments shown in FIGS. 4 to 10, the combination of the treatment liquid and the gas for producing the nanobubbles may consider oxygen or ozone and pure water, nitrogen or carbon dioxide, and etching liquid, air or oxygen or ozone and stripping liquid. , nitrogen or carbon dioxide combined with stripping solution, and the like.

When the gas containing the nanobubble is oxygen or ozone, and the treatment liquid is pure water, the organic wave from the surface of the substrate W can be promoted by the cavitation wave of the cavitation action. Decomposition of matter or detachment of particles.

When the gas containing the nanobubbles is nitrogen gas or carbon dioxide, and the treatment liquid is an etching liquid, when the cavitation wave is induced by the cavitation caused by the collapse of the nanobubbles, the residue due to the etching can be removed by the blast wave. At the same time, the gas of the nanobubbles is dissolved in the treatment liquid, and has an effect of preventing oxidation of the surface of the substrate W by nitrogen or carbon dioxide.

When the gas containing the nanobubbles is air or oxygen or ozone, and the treatment liquid is a stripping solution, the cationic substance which is peeled off by the negative ions on the surface of the nanobubble absorbs the nanobubbles and repels the anionic substance to prevent reattachment. On the substrate W.

Further, since the nanobubbles have properties such as absorption of metal ions (aluminum, molybdenum, tungsten, or copper), metal ions can be simultaneously removed.

When the gas containing the nanobubbles is nitrogen gas or carbon gas, and the treatment liquid is a stripping liquid, the residue of the stripping liquid can be removed by the wave which is induced by the cavitation action caused by the collapse of the nanobubbles. Further, when the gas is carbon dioxide, the deterioration of the liquid can be prevented by crushing the nanobubbles. Further, when the peeling liquid on the surface of the substrate W is rinsed with pure water, the carbon dioxide contained in the peeling liquid can prevent the peeling liquid from reacting with the pure water to become strongly alkaline.

Industrial availability

According to the invention, the gas and the treatment liquid can be swirled and supplied to the shear chamber of the gas shearer, and the gas is mechanically cut by the difference in the speed of the swirl between the gas and the treatment liquid to produce a nanometer. bubble. Therefore, since the nanobubbles can be efficiently generated before the gas is dissolved in the treatment liquid, the substrate can be efficiently washed by the treatment liquid containing the nanobubbles.

1‧‧‧Processing room

3b‧‧‧Front Space Department

2‧‧‧ gas cutter

4‧‧‧Ontology

3‧‧‧cutting room

5‧‧‧jet

3a‧‧‧After the Ministry of Space

6‧‧‧ gas supply port

7‧‧‧Liquid supply port

11‧‧‧Metal cover for gas swirl

12‧‧‧ gas supply pump

13‧‧‧ gas supply pipe

14‧‧‧1st on-off valve

15‧‧‧Gas Cavity Department

16‧‧‧Liquid supply metal cover

17‧‧‧Liquid supply pump

18‧‧‧Liquid supply tube

19‧‧‧2nd on-off valve

21‧‧‧Spiral treatment device

22‧‧‧Rotating table

23‧‧‧ cup body

24‧‧‧ Spindle

25‧‧‧Motor

26‧‧‧Support arm

27‧‧‧Support pins

28‧‧‧ card sales

31,31A‧‧‧Supersonic nozzle body

32‧‧‧Shake arm

35‧‧‧Liquid supply nozzle

36‧‧‧Horizontal handling device

37‧‧‧Transport roller

41,43,44‧‧‧ Shower fittings

42,42a‧‧‧Pressure pump

45‧‧‧High pressure shower fittings

L‧‧‧ pure water

P1‧‧‧Oxygen supply pressure

P2‧‧‧ supply pressure of pure water

V1‧‧‧ Oxygen gyroscopic speed

V2‧‧‧ pure water swing speed

W‧‧‧Substrate

Fig. 1 is a schematic block diagram showing a processing apparatus according to a first embodiment of the present invention.

Figure 2 is a cross-sectional view along the axial direction of the gas shear.

Figure 3 is a side view of the gas cutter viewed from the rear end.

Fig. 4 is a schematic block diagram showing a spiral processing apparatus according to a second embodiment of the present invention.

Fig. 5 is a schematic block diagram showing a spiral processing apparatus according to a third embodiment of the present invention.

Fig. 6 is a schematic block diagram showing a horizontal conveyance processing apparatus according to a fourth embodiment of the present invention.

Fig. 7 is a schematic block diagram showing a horizontal conveyance processing device according to a fifth embodiment of the present invention.

Fig. 8 is a view showing a schematic configuration of a horizontal transport processing device according to a sixth embodiment of the present invention.

Fig. 9 is a schematic block diagram showing a horizontal conveyance processing apparatus according to a seventh embodiment of the present invention.

Fig. 10 is a schematic block diagram showing a horizontal conveyance processing apparatus according to an eighth embodiment of the present invention.

2‧‧‧ gas cutter

3‧‧‧cutting room

4‧‧‧Ontology

11‧‧‧Metal cover for gas swirl

13‧‧‧ gas supply pipe

16‧‧‧Liquid supply metal cover

18‧‧‧Liquid supply tube

36‧‧‧Horizontal handling device

37‧‧‧Transport roller

42‧‧‧Pressure pump

43‧‧‧ Shower fittings

Claims (7)

A substrate processing apparatus for processing a substrate by a processing liquid, comprising: a nano bubble generating mechanism for generating a nanobubble and mixing the nano bubble with the processing liquid; and the nano bubble generating mechanism The gas shearer is provided with a shear chamber formed therein; the gas supply unit is disposed at one end of the gas shearer in the axial direction, and supplies the gas swirl to the shear a liquid chamber, and a liquid supply portion disposed on an outer peripheral surface of one end of the gas shearer, and swirling the treatment liquid to the shear chamber, and by the difference in swirl speed with the gas In the above-described substrate, the processing device for the substrate further includes a processing liquid supply mechanism that supplies the processing liquid containing the nanobubbles generated by the nano bubble generating mechanism to the substrate surface. And a pressurizing mechanism for applying the nanobubbles contained in the treatment liquid supplied to the surface of the substrate by the processing liquid supply mechanism; Crushed by the pressure of its plate surface of. The processing device for a substrate according to the first aspect of the invention, wherein the pressurizing mechanism is a pressurizing pump that pressurizes a processing liquid supplied from the nano generating mechanism to the processing liquid supply mechanism, The nanobubbles contained in the treatment liquid are crushed. The processing device for a substrate according to claim 1, wherein the substrate is horizontally transported by a horizontal transfer mechanism, And the pressurizing mechanism is a pressurizing pump that pressurizes a liquid different from the processing liquid to a pressure that can crush the nanobubbles, and the liquid system pressurized by the pressurizing pump is sprayed by the liquid. The mechanism is supplied to the portion on the downstream side in the transport direction of the substrate from the portion of the substrate surface on which the processing liquid supply means supplies the processing liquid. A method for processing a substrate by treating a substrate with a treatment liquid, comprising: a mixing step of generating a nanobubble and mixing the nanobubble with the treatment liquid; and a supply step of containing a nanobubble The treatment liquid is supplied to the substrate plate surface; and the pressurizing step applies a pressure which can be crushed on the substrate surface of the nano-bubble contained in the treatment liquid supplied to the substrate surface. The method for processing a substrate according to claim 4, wherein when the processing liquid is supplied to the substrate, the nanobubbles contained in the treatment liquid are crushed. The method for processing a substrate according to claim 4, wherein after the treatment liquid is supplied to the substrate, the nanobubbles contained in the treatment liquid are crushed. A method of processing a substrate by treating a substrate with a processing liquid, and the processing method is to process the substrate by a processing device according to claim 1 of the patent application.