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TWI412115B - Electrostatic Discharge Protection Module for Integrated Circuit - Google Patents

Electrostatic Discharge Protection Module for Integrated Circuit Download PDF

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Publication number
TWI412115B
TWI412115B TW99107760A TW99107760A TWI412115B TW I412115 B TWI412115 B TW I412115B TW 99107760 A TW99107760 A TW 99107760A TW 99107760 A TW99107760 A TW 99107760A TW I412115 B TWI412115 B TW I412115B
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register
output
integrated circuit
target
electrostatic discharge
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TW99107760A
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Chinese (zh)
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TW201133766A (en
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Liang Jung Chen
Chia Cheng Wu
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Ili Technology Corp
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Abstract

Disclosed is an electrostatic discharge protection module for an integrated circuit, which is suitable for electrically connecting with an objective register having an input end and an output end in an integrated circuit. The module comprises: a shadow register including an input end and an output end where the input end electrically connects with the input end of the objective register; and a computing unit which electrically connects with the output ends of the objective register and the shadow register to receive their output values and calculate the output values to obtain an output result. The output result is then treated as the output value of the objective register.

Description

積體電路之靜電放電防護模組Electrostatic discharge protection module of integrated circuit

本發明是有關於一種靜電放電防護模組,特別是指一種應用於一積體電路中之靜電放電防護模組。The invention relates to an electrostatic discharge protection module, in particular to an electrostatic discharge protection module applied to an integrated circuit.

一般而言,靜電放電(Electrostatic Discharge,ESD)效應是造成大多數的電子元件或電子系統受到過度電性應力(Electrical Overstress,EOS)破壞的主要因素。這種破壞會導致半導體元件以及電腦系統等,形成一種永久性或非永久性(暫時性)的功能毀壞,因而影響積體電路(Integrated Circuits,ICs)的電路功能,而使得電子產品工作不正常。In general, the Electrostatic Discharge (ESD) effect is the main cause of most electronic components or electronic systems being damaged by Electrical Overstress (EOS). Such damage can lead to permanent or non-permanent (temporary) function destruction of semiconductor components and computer systems, thus affecting the circuit functions of integrated circuits (ICs), and making electronic products work abnormally. .

由於一電子系統進行靜電放電防護測試的時候,晶片內部的數位暫存器所存的資料非常容易被改寫,進而造成該電子系統產生錯誤的動作。而且,由於可攜式電子裝置日趨重要且成本也越來越低,使得晶片面積越做越小,進而造成晶片內部的電源線/地線寬度以及穩壓電容越來越小。所以當該電子系統在做靜電放電防護測試的時候,晶片內部的電源線以及地線造成電壓反轉,使得晶片內部的數位暫存器所存的資料容易遺失且錯誤,進而使得晶片進入休眠、關機狀態。When an electronic system performs an ESD protection test, the data stored in the digital register inside the chip is easily rewritten, causing the electronic system to malfunction. Moreover, as portable electronic devices become more and more important and the cost is also lower, the wafer area is made smaller and smaller, and the power line/ground line width and the voltage stabilizing capacitance inside the wafer are becoming smaller and smaller. Therefore, when the electronic system is performing the electrostatic discharge protection test, the power supply line and the ground line inside the chip cause a voltage reversal, so that the data stored in the digital register inside the chip is easily lost and wrong, thereby causing the wafer to go into sleep and shut down. status.

本領域之人士皆能了解當一積體電路在做靜電放電防護測試時,大多要經過系統放電模式(System ESD)、人體放電模式(Human-Body Model,HBM)、機器放電模式(Machine Model,MM)、元件充電模式(Charged-Device Model,CDM)、電場感應模式(Field-Induced Model,FIM)等不同模式的測試過程,而上述測試過程通常需要歷經數以千次、甚至數以萬次的測試過程,所以對於一積體電路而言,其靜電放電防護測試的成本是相當高的。Those skilled in the art can understand that when an integrated circuit is subjected to the electrostatic discharge protection test, most of them must pass the system discharge mode (System ESD), the human body discharge mode (HBM), and the machine discharge mode (Machine Model, MM), Charged-Device Model (CDM), Field-Induced Model (FIM), etc., and the above test process usually takes thousands, or even tens of thousands of times. The test process, so for an integrated circuit, the cost of its ESD protection test is quite high.

現階段一積體電路在設計階段時,其積體電路設計者(IC designer)往往在該積體電路的輸入輸出端採用具有靜電放電防護功能之標準輸入/輸出墊片(Standard I/O Pads)來作為每一輸出端及輸入端所對應的輸入/輸出墊片,例如:一台積電0.25μm 製程的標準輸入/輸出墊片型號TPZ873GEZ、或一台積電0.18μm 製程的標準輸入/輸出墊片型號TPZ973G等。At the present stage, when an integrated circuit is in the design stage, its IC designer often uses standard I/O pads with electrostatic discharge protection at the input and output of the integrated circuit (Standard I/O Pads). ) as an input terminal and an output terminal of each corresponding input / output pad, for example: a standard input TSMC manufacturing process 0.25μ m / output pad type TPZ873GEZ, or a standard input TSMC process 0.18μ m / output pads Film type TPZ973G and so on.

然而,當一積體電路進行靜電放電防護測試時會發生相當多的問題,例如:數位暫存器被改寫。一旦在靜電放電防護測試過程中發生問題時,積體電路設計者勢必得重新更改輸入/輸出墊片的規格以使該積體電路得以通過靜電放電防護測試流程。由於更改輸入/輸出墊片只能改變積體電路與外界的介面以通過靜電放電防護測試流程,但卻仍就無法有效防護積體電路內部的數位暫存器,甚至積體電路設計者有可能要面臨更改積體電路內部的整體架構以改善其靜電防護能力,此舉一來無疑將大幅增加積體電路的設計成本,二來也會同時增加靜電放電防護測試的成本,因此,如何找出一可快速且有效通過靜電放電防護測試流程的設計方法及對應的電路設計,是相當值得探討的議題之一。However, when an integrated circuit is subjected to an electrostatic discharge protection test, considerable problems occur, for example, the digital register is rewritten. Once a problem occurs during the ESD protection test, the integrated circuit designer must change the specifications of the input/output pad to allow the integrated circuit to pass the ESD protection test procedure. Since changing the input/output pad can only change the integrated circuit and the external interface to pass the ESD protection test flow, it still cannot effectively protect the digital register inside the integrated circuit, and even the integrated circuit designer may Faced with changing the overall architecture inside the integrated circuit to improve its electrostatic protection capability, this will undoubtedly increase the design cost of the integrated circuit, and at the same time increase the cost of the ESD protection test. Therefore, how to find out A design method and corresponding circuit design that can quickly and effectively pass the electrostatic discharge protection test flow is one of the topics worthy of discussion.

因此,本發明之目的,即在提供一種積體電路之靜電放電防護模組,適用於與一積體電路中一具有一輸入端及一輸出端之目標暫存器電連接,其包含:一影子暫存器,具有一輸入端與一輸出端,且其輸入端與該目標暫存器之輸入端電連接;及一運算單元,與該目標暫存器及該影子暫存器之輸出端電連接並接收該等輸出值,且將該等輸出值進行運算以得到一輸出結果,並將該輸出結果作為該目標暫存器的輸出值。Therefore, the object of the present invention is to provide an integrated circuit of an electrostatic discharge protection module, which is suitable for electrically connecting to a target register having an input end and an output end in an integrated circuit, comprising: The shadow register has an input end and an output end, and an input end thereof is electrically connected to an input end of the target register; and an operation unit, and the output end of the target register and the shadow register The output values are electrically connected and received, and the output values are operated to obtain an output result, and the output result is used as an output value of the target register.

此外,本發明之另一目的,即在提供一種積體電路之靜電放電防護模組,適用於與一積體電路中一具有一輸入端及一輸出端之目標暫存器電連接,其包含:多數個影子暫存器,分別具有一輸入端與一輸出端,且該等影子暫存器之輸入端分別與該目標暫存器之輸入端電連接;及一運算單元,與該等影子暫存器之輸出端電連接並接收該等輸出值,且將該等輸出值進行運算以得到一輸出結果,並將該輸出結果作為該目標暫存器的輸出值。In addition, another object of the present invention is to provide an electrostatic discharge protection module with an integrated circuit, which is suitable for electrically connecting to a target register having an input end and an output end in an integrated circuit, which includes Each of the shadow registers has an input end and an output end, and the input ends of the shadow registers are respectively electrically connected to the input end of the target register; and an operation unit, and the shadows The output of the register is electrically connected and receives the output values, and the output values are operated to obtain an output result, and the output result is used as an output value of the target register.

有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之二個較佳實施例的詳細說明中,將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention.

在本發明被詳細描述之前,要注意的是,在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals.

第一較佳實施例First preferred embodiment

參閱圖1,本發明之第一較佳實施例,適用於與一積體電路中9一具有一輸入端及一輸出端之目標暫存器91電連接,其包含:一具有一輸入端與一輸出端之影子暫存器(Shadow register) 11及一個運算單元12。其中,該目標暫存器91用以儲存一具有一序列資料之目標訊號,該影子暫存器11之輸入端與該目標暫存器91之輸入端電連接,用以同時接收並儲存該目標訊號之資料,此外,該影子暫存器11之輸出端與該目標暫存器91之輸出端皆電連接於該運算單元12,並將所儲存該目標訊號之資料輸出至該運算單元12中。Referring to FIG. 1, a first preferred embodiment of the present invention is adapted to be electrically connected to a target register 91 having an input end and an output end in an integrated circuit, comprising: an input having an input end; An output shadow register 11 and an arithmetic unit 12. The target register 91 is configured to store a target signal having a sequence of data, and the input end of the shadow register 11 is electrically connected to the input end of the target register 91 for simultaneously receiving and storing the target. In addition, the output of the shadow register 11 and the output end of the target register 91 are electrically connected to the operation unit 12, and the data of the target signal is output to the operation unit 12. .

依據該目標訊號之特性可以區分為二:According to the characteristics of the target signal, it can be divided into two:

一、該目標訊號為一正緣觸發(Positive edge trigger)訊號,也就是說,當該目標訊號之資料為1時,代表該目標訊號被致能(Enable),而該目標訊號之資料為0時,代表該目標訊號被去能(Disable),舉例來說,參閱圖2,當該目標訊號為一重置訊號時(Reset signal),該目標暫存器91即為一重置暫存器(Reset register),當該重置訊號之資料為1時,該積體電路9將切換至一重置模式(Reset mode),直到該重置訊號之資料變為0時,該積體電路9才切換為一正常模式(Normal mode);及1. The target signal is a positive edge trigger signal, that is, when the data of the target signal is 1, the target signal is enabled, and the target signal is 0. When the target signal is disabled, for example, referring to FIG. 2, when the target signal is a reset signal, the target register 91 is a reset register. (Reset register), when the data of the reset signal is 1, the integrated circuit 9 will switch to a reset mode until the data of the reset signal becomes 0, the integrated circuit 9 Switch to a normal mode (Normal mode); and

二、該目標訊號為一負緣觸發(Negative edge trigger)訊號,也就是說,當該目標訊號之資料為0時,代表該目標訊號被致能,而該目標訊號之資料為1時,代表該目標訊號被去能,舉例來說,參閱圖3,當該目標訊號為一重置訊號時,該目標暫存器91即為一重置暫存器,當該重置訊號之資料為0時,該積體電路9將切換至一重置模式,直到該重置訊號之資料變為1時,該積體電路9才切換為一正常模式。2. The target signal is a negative edge trigger signal. That is, when the data of the target signal is 0, the target signal is enabled, and when the target signal is 1, the representative signal The target signal is disabled. For example, referring to FIG. 3, when the target signal is a reset signal, the target register 91 is a reset register, and when the reset signal is 0. At this time, the integrated circuit 9 will switch to a reset mode until the data of the reset signal becomes 1, the integrated circuit 9 switches to a normal mode.

因此,根據上述兩種不同的訊號特性,該判斷模組12之設計方式如下所述:參閱圖4,當該目標訊號為一正緣觸發訊號,該判斷模組12可設計為一或閘(OR gate) 121或一輸出結果等同於一或運算的電路組。該或閘121接收該影子暫存器11及該目標暫存器91的輸出值並進行二者的或運算,如此一來,當該目標訊號被致能時,該目標暫存器91及其對應的影子暫存器11所接收並儲存的資料為1,此時,若是該影子暫存器11及該目標暫存器91其中一者因受到靜電放電效應干擾而改變其所儲存的資料為0時,藉由該或閘121執行或運算之後所輸出的結果仍然為1,且將該輸出結果做為該目標暫存器91的輸出值,因此,只要該目標暫存器91及該影子暫存器11沒有同時被靜電放電效應所影響,該目標暫存器91之輸出值仍為1,可使得該目標訊號仍可被致能而不會因為靜電放電效應干擾而被去能,所以可以降低靜電放電效應對於該目標訊號的影響。Therefore, according to the two different signal characteristics, the design of the determining module 12 is as follows: Referring to FIG. 4, when the target signal is a positive edge trigger signal, the determining module 12 can be designed as a gate ( OR gate) 121 or an output result is equivalent to a circuit group of one OR operations. The OR gate 121 receives the output values of the shadow register 11 and the target register 91 and performs an OR operation therebetween, so that when the target signal is enabled, the target register 91 and The data received and stored by the corresponding shadow register 11 is 1. At this time, if one of the shadow register 11 and the target register 91 is disturbed by the electrostatic discharge effect, the stored data is changed. 0, the result output after the OR operation of the OR gate 121 is still 1 and the output result is taken as the output value of the target register 91, so as long as the target register 91 and the shadow The register 11 is not affected by the electrostatic discharge effect at the same time, and the output value of the target register 91 is still 1, so that the target signal can still be enabled without being dissipated due to the electrostatic discharge effect, so The effect of the electrostatic discharge effect on the target signal can be reduced.

參閱圖5,當該目標訊號為一負緣觸發訊號,該判斷模組12可設計為一及閘(AND gate) 122或一輸出結果等同於一及運算的電路組。該及閘122接收該影子暫存器11及該目標暫存器91的輸出值並進行二者的及運算,如此一來,當該目標訊號被致能時,該目標暫存器91及其對應的影子暫存器11所接收並儲存的資料為0,此時,若是該影子暫存器11及該目標暫存器91其中一者因受到靜電放電效應干擾而改變其所儲存的資料為1時,藉由該及閘122執行及運算之後所輸出的結果仍然為0,且將該輸出結果做為該目標暫存器91的輸出值,因此,只要該目標暫存器91及該影子暫存器11沒有同時被靜電放電效應所影響,該目標暫存器91之輸出值仍為0,可使得該目標訊號仍可被致能而不會因為靜電放電效應干擾而被去能,所以可以降低靜電放電效應對於該目標訊號的影響。Referring to FIG. 5, when the target signal is a negative edge trigger signal, the determining module 12 can be designed as an AND gate 122 or a circuit group whose output is equivalent to an AND operation. The AND gate 122 receives the output values of the shadow register 11 and the target register 91 and performs the sum operation of the two, so that when the target signal is enabled, the target register 91 and The data received and stored by the corresponding shadow register 11 is 0. At this time, if one of the shadow register 11 and the target register 91 is affected by the electrostatic discharge effect, the stored data is changed. At 1 o'clock, the result outputted by the AND gate 122 is still 0, and the output result is used as the output value of the target register 91. Therefore, as long as the target register 91 and the shadow The register 11 is not affected by the electrostatic discharge effect at the same time, and the output value of the target register 91 is still 0, so that the target signal can still be enabled without being dissipated due to the electrostatic discharge effect, so The effect of the electrostatic discharge effect on the target signal can be reduced.

當然,由於該靜電放電效應一般對於一積體電路都是局部性的影響,也就是說,一旦靜電放電效應產生時,並非全部積體電路內的所有暫存器都會受到影響,而是依照產生靜電放電的位置而有程度不一的影響,所以,在積體電路設計時,若是將該影子暫存器11及其對應的目標暫存器91之佈局(Layout)位置以相當程度的距離間隔開以進行佈局的話(例如:將影子暫存器11佈局於積體電路中的左上方,而該目標暫存器91佈局於該積體電路之右下方),則更可以有效降低靜電放電效應對於該目標暫存器所儲存之正緣觸發訊號的影響。Of course, since the electrostatic discharge effect is generally localized for an integrated circuit, that is, once the electrostatic discharge effect occurs, not all of the registers in the integrated circuit are affected, but are generated according to The position of the electrostatic discharge has a different degree of influence. Therefore, in the design of the integrated circuit, if the layout position of the shadow register 11 and its corresponding target register 91 is spaced by a considerable distance. If the layout is performed (for example, the shadow register 11 is disposed on the upper left side of the integrated circuit, and the target register 91 is disposed on the lower right side of the integrated circuit), the electrostatic discharge effect can be effectively reduced. The effect of the positive edge trigger signal stored by the target register.

第二較佳實施例Second preferred embodiment

參閱圖6,本發明之第二較佳實施例,適用於與一積體電路中9一具有一輸入端及一輸出端之目標暫存器91電連接,其包含:多數個具有一輸入端與一輸出端之影子暫存器(Shadow register) 11及一個運算單元12。Referring to FIG. 6, a second preferred embodiment of the present invention is adapted to be electrically connected to a target register 91 having an input end and an output end in an integrated circuit, which includes: a plurality of inputs having an input end And a shadow register 11 and an arithmetic unit 12 at the output end.

其中,該目標暫存器91用以儲存一具有一序列資料之目標訊號,該等影子暫存器11之輸入端與該目標暫存器91之輸入端電連接,用以同時接收並儲存該目標訊號之資料,而本實施例與該第一較佳實施例最大的不同點就在於該等影子暫存器11之輸出端電連接於該運算單元12,而該目標暫存器91之輸出端並未電連接於該運算單元12。The target register 91 is configured to store a target signal having a sequence of data, and the input end of the shadow register 11 is electrically connected to the input end of the target register 91 for receiving and storing the same at the same time. The information of the target signal, and the biggest difference between the embodiment and the first preferred embodiment is that the output of the shadow register 11 is electrically connected to the operation unit 12, and the output of the target register 91 is output. The terminal is not electrically connected to the arithmetic unit 12.

參閱圖7,當該目標訊號為一正緣觸發訊號,該判斷模組12可設計為一或閘(OR gate) 121或一輸出結果等同於一或運算的電路組。該或閘121接收該等影子暫存器11的輸出值並進行對應的或運算,如此一來,當該目標訊號被致能時,該目標暫存器91及其對應的該等影子暫存器11所接收並儲存的資料皆為1,此時,若靜電放電效應影響該等影子暫存器11時,只要其中一者並未受到靜電放電效應干擾的話,藉由該或閘121執行或運算之後所輸出的結果仍然為1,且將該輸出結果做為該目標暫存器91的輸出值,因此,無論該目標暫存器91是否被靜電放電效應所影響,只要有一影子暫存器11沒有被靜電放電效應所影響,該目標暫存器91之輸出值仍為1,可使得該目標訊號仍可被致能而不會因為靜電放電效應干擾而被去能,所以可以降低靜電放電效應對於該目標訊號的影響。Referring to FIG. 7, when the target signal is a positive edge trigger signal, the determining module 12 can be designed as an OR gate 121 or a circuit group whose output is equivalent to an OR operation. The OR gate 121 receives the output values of the shadow registers 11 and performs a corresponding OR operation. Thus, when the target signal is enabled, the target register 91 and its corresponding shadows are temporarily stored. The data received and stored by the device 11 is 1. In this case, if the electrostatic discharge effect affects the shadow registers 11, as long as one of them is not interfered by the electrostatic discharge effect, the gate 121 is executed or The result output after the operation is still 1 and the output result is taken as the output value of the target register 91. Therefore, regardless of whether the target register 91 is affected by the electrostatic discharge effect, only one shadow register is provided. 11 is not affected by the electrostatic discharge effect, the output value of the target register 91 is still 1, so that the target signal can still be enabled without being dissipated due to the electrostatic discharge effect, so the electrostatic discharge can be reduced. The effect of the effect on the target signal.

參閱圖8,當該目標訊號為一負緣觸發訊號,該判斷模組12可設計為一及閘(AND gate) 121或一輸出結果等同於一及運算的電路組。該及閘122接收該等影子暫存器11的輸出值並進行對應的及運算,如此一來,當該目標訊號被致能時,該目標暫存器91及其對應的該等影子暫存器11所接收並儲存的資料皆為0,此時,若靜電放電效應影響該等影子暫存器11時,只要其中一者並未受到靜電放電效應干擾的話,藉由該及閘122執行及運算之後所輸出的結果仍然為0,且將該輸出結果做為該目標暫存器91的輸出值,因此,無論該目標暫存器91是否被靜電放電效應所影響,只要有一影子暫存器11沒有被靜電放電效應所影響,該目標暫存器91之輸出值仍為0,可使得該目標訊號仍可被致能而不會因為靜電放電效應干擾而被去能,所以可以降低靜電放電效應對於該目標訊號的影響。Referring to FIG. 8, when the target signal is a negative edge trigger signal, the determining module 12 can be designed as an AND gate 121 or a circuit group whose output is equivalent to an AND operation. The AND gate 122 receives the output values of the shadow registers 11 and performs corresponding AND operations. Thus, when the target signal is enabled, the target register 91 and its corresponding shadows are temporarily stored. The data received and stored by the device 11 is 0. At this time, if the electrostatic discharge effect affects the shadow registers 11, as long as one of them is not interfered by the electrostatic discharge effect, the gate 122 is executed and The result output after the operation is still 0, and the output result is taken as the output value of the target register 91. Therefore, regardless of whether the target register 91 is affected by the electrostatic discharge effect, only one shadow register is provided. 11 is not affected by the electrostatic discharge effect, the output value of the target register 91 is still 0, so that the target signal can still be enabled without being dissipated due to the electrostatic discharge effect, so the electrostatic discharge can be reduced. The effect of the effect on the target signal.

此外,若該等影子暫存器11得以被平均佈局於整體積體電路中,只要該靜電放電效應不致影響整個積體電路時,將至少一影子暫存器11不被影響,藉由上述的設計,只要至少一影子暫存器11的資料不被改變時,無論其所對的目標訊號為正緣觸發訊號或是負緣觸發訊號,皆可藉由該運算單元12輸出正確的資料,所以可以大幅降低靜電放電效應對於一積體電路的影響程度。In addition, if the shadow registers 11 are evenly arranged in the whole volume circuit, as long as the electrostatic discharge effect does not affect the entire integrated circuit, at least one shadow register 11 is not affected, by the above The design, as long as at least one of the shadow register 11 data is not changed, regardless of whether the target signal is a positive edge trigger signal or a negative edge trigger signal, the arithmetic unit 12 can output the correct data, so The degree of influence of the electrostatic discharge effect on an integrated circuit can be greatly reduced.

而由於該等影子暫存器11的面積佔整體積體電路面積的比例相當小,因此幾乎不會影響積體電路的面積,自然也就幾乎不會增加積體電路的生產及設計成本。Since the ratio of the area of the shadow register 11 to the area of the whole volume circuit is relatively small, the area of the integrated circuit is hardly affected, and the production and design cost of the integrated circuit is hardly increased.

綜上所述,本發明可以確實降低靜電放電效應對於一積體電路的影響程度,因此目標暫存器的輸出值仍可維持正確,同時,也不需要改變積體電路之輸出/輸入墊片的規格,所以可以大幅降低積體電路的設計成本及靜電放電防護測試的成本,因此,故確實能達成本發明之目的。In summary, the present invention can surely reduce the degree of influence of the electrostatic discharge effect on an integrated circuit, so that the output value of the target register can still be maintained correctly, and at the same time, it is not necessary to change the output/input pad of the integrated circuit. Since the specification is such that the design cost of the integrated circuit and the cost of the electrostatic discharge protection test can be greatly reduced, the object of the present invention can be achieved.

惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

11...影子暫存器11. . . Shadow register

12...運算單元12. . . Arithmetic unit

121...或閘121. . . Gate

122...及閘122. . . Gate

圖1是本發明之第一較佳實施例之電路示意圖;1 is a circuit diagram of a first preferred embodiment of the present invention;

圖2是一正緣觸發訊號之時脈波型圖;2 is a clock waveform diagram of a positive edge trigger signal;

圖3是一負緣觸發訊號之時脈波型圖;3 is a clock waveform diagram of a negative edge trigger signal;

圖4是該第一較佳實施例之運算單元實施方式一;Figure 4 is a first embodiment of the arithmetic unit of the first preferred embodiment;

圖5是該第一較佳實施例之運算單元實施方式二;Figure 5 is a second embodiment of the arithmetic unit of the first preferred embodiment;

圖6是本發明之第二較佳實施例之電路示意圖;Figure 6 is a circuit diagram of a second preferred embodiment of the present invention;

圖7是該第二較佳實施例之運算單元實施方式一;及Figure 7 is a first embodiment of the arithmetic unit of the second preferred embodiment; and

圖8是該第二較佳實施例之運算單元實施方式二。FIG. 8 is a second embodiment of the arithmetic unit of the second preferred embodiment.

11...影子暫存器11. . . Shadow register

12...運算單元12. . . Arithmetic unit

9...積體電路9. . . Integrated circuit

91...目標暫存器91. . . Target register

Claims (8)

一種積體電路之靜電放電防護模組,適用於與一積體電路中一具有一輸入端及一輸出端之目標暫存器電連接,其包含:一影子暫存器,具有一輸入端與一輸出端,且其輸入端與該目標暫存器之輸入端電連接;及一運算單元,與該目標暫存器及該影子暫存器之輸出端電連接並接收該等輸出值,且將該等輸出值進行運算以得到一輸出結果,並將該輸出結果作為該目標暫存器的輸出值。An electrostatic discharge protection module for an integrated circuit is electrically connected to a target register having an input end and an output end in an integrated circuit, comprising: a shadow register having an input end and An output terminal, wherein the input end is electrically connected to the input end of the target register; and an operation unit electrically connected to the target register and the output end of the shadow register and receiving the output values, and The output values are operated to obtain an output result, and the output result is used as an output value of the target register. 根據申請專利範圍第1項所述之積體電路之靜電放電防護模組,其中,該影子暫存器的輸入端所接收的一目標訊號為一正緣觸發訊號,且該運算單元是一或閘並對該目標暫存器及該影子暫存器的輸出值進行或運算。According to the electrostatic discharge protection module of the integrated circuit of claim 1, wherein the target signal received by the input end of the shadow register is a positive edge trigger signal, and the operation unit is one or The gate performs an OR operation on the target register and the output value of the shadow register. 根據申請專利範圍第1項所述之積體電路之靜電放電防護模組,其中,該影子暫存器的輸入端所接收的一目標訊號為一負緣觸發訊號,且該運算單元是一及閘並對該目標暫存器及該影子暫存器的輸出值進行及運算。According to the electrostatic discharge protection module of the integrated circuit of claim 1, wherein the target signal received by the input end of the shadow register is a negative edge trigger signal, and the operation unit is The gate performs a sum operation on the output values of the target register and the shadow register. 根據申請專利範圍第1項所述之積體電路之靜電放電防護模組,其中,該影子暫存器以相對遠離該目標暫存器的方式佈局於該積體電路中。The electrostatic discharge protection module of the integrated circuit of claim 1, wherein the shadow register is disposed in the integrated circuit in a manner relatively away from the target register. 一種積體電路之靜電放電防護模組,適用於與一積體電路中一具有一輸入端及一輸出端之目標暫存器電連接,其包含:多數個影子暫存器,分別具有一輸入端與一輸出端,且該等影子暫存器之輸入端分別與該目標暫存器之輸入端電連接;及一運算單元,與該等影子暫存器之輸出端電連接並接收該等輸出值,且將該等輸出值進行運算以得到一輸出結果,並將該輸出結果作為該目標暫存器的輸出值。An electrostatic discharge protection module for an integrated circuit is adapted to be electrically connected to a target register having an input end and an output end in an integrated circuit, comprising: a plurality of shadow registers, each having an input And an output end, and the input ends of the shadow registers are respectively electrically connected to the input end of the target register; and an operation unit is electrically connected to the output ends of the shadow registers and receives the same The values are output, and the output values are operated to obtain an output result, and the output result is used as an output value of the target register. 根據申請專利範圍第5項所述之積體電路之靜電放電防護模組,其中,該等影子暫存器的輸入端所接收的一目標訊號為一正緣觸發訊號,且該運算單元是一或閘並對該目標暫存器及該影子暫存器的輸出值進行或運算。The electrostatic discharge protection module of the integrated circuit according to the fifth aspect of the invention, wherein the target signal received by the input end of the shadow register is a positive edge trigger signal, and the operation unit is a Or the gate and OR the output value of the target register and the shadow register. 根據申請專利範圍第5項所述之積體電路之靜電放電防護模組,其中,該影子暫存器的輸入端所接收的一目標訊號為一負緣觸發訊號,且該運算單元是一及閘並對該目標暫存器及該影子暫存器的輸出值進行及運算。According to the electrostatic discharge protection module of the integrated circuit of claim 5, the target signal received by the input end of the shadow register is a negative edge trigger signal, and the operation unit is The gate performs a sum operation on the output values of the target register and the shadow register. 根據申請專利範圍第5項所述之積體電路之靜電放電防護模組,其中,該等影子暫存器以相對平均佈局方式佈局於整個積體電路中。The electrostatic discharge protection module of the integrated circuit according to claim 5, wherein the shadow registers are arranged in the entire integrated circuit in a relatively even layout.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923160A (en) * 1997-04-19 1999-07-13 Lucent Technologies, Inc. Electrostatic discharge event locators
TW200850075A (en) * 2007-06-04 2008-12-16 Via Tech Inc Integrated circuit and electrostatic discharge protection circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923160A (en) * 1997-04-19 1999-07-13 Lucent Technologies, Inc. Electrostatic discharge event locators
TW200850075A (en) * 2007-06-04 2008-12-16 Via Tech Inc Integrated circuit and electrostatic discharge protection circuit

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