TWI404450B - Method of implanting nano carbon tube - Google Patents
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- TWI404450B TWI404450B TW95149741A TW95149741A TWI404450B TW I404450 B TWI404450 B TW I404450B TW 95149741 A TW95149741 A TW 95149741A TW 95149741 A TW95149741 A TW 95149741A TW I404450 B TWI404450 B TW I404450B
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- 238000000034 method Methods 0.000 title claims abstract description 116
- 229910021392 nanocarbon Inorganic materials 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 128
- 238000002513 implantation Methods 0.000 claims abstract description 45
- 230000008569 process Effects 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 274
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 273
- 239000002041 carbon nanotube Substances 0.000 claims description 273
- 239000003989 dielectric material Substances 0.000 claims description 52
- 239000002861 polymer material Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000008439 repair process Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
Description
本發明係有關於一種奈米碳管植入方法,更詳而言之,係有關於一種應用於至少由陰極板(Cathode Plate)及陽極板(Anode Plate)所組成之奈米碳管發光裝置之製程中之奈米碳管植入方法。The present invention relates to a carbon nanotube implantation method, and more particularly to a carbon nanotube light-emitting device composed of at least a cathode plate and an anode plate. The method of implanting carbon nanotubes in the process.
按,奈米碳管場發射顯示器(Carbon Nanotube Field Emission Display;CNT-FED)不僅保留了陰極射線管(Cathode Ray Tube;CRT)的影像品質,並具有省電及體積薄小的好處;利用奈米碳管的低導通電場、高發射電流密度以及高穩定特性,所生產之大尺寸、低成本的全新之平面顯示器相較於液晶顯示器與電漿顯示器等技術,更具有低驅動電壓、反應時間迅速、工作溫度範圍大、高發光效率、無視角問題及省電的優點。According to the Carbon Nanotube Field Emission Display (CNT-FED), not only the image quality of the cathode ray tube (CRT) is preserved, but also the advantages of power saving and thin volume are utilized; The low-conduction electric field, high emission current density and high stability characteristics of the carbon nanotubes produce a large-scale, low-cost new flat-panel display with lower driving voltage and reaction time than technologies such as liquid crystal displays and plasma displays. Fast, wide operating temperature range, high luminous efficiency, no viewing angle problems and power saving advantages.
而在國內外業界主要的奈米碳管塗佈技術主要可以分為:網印法(Screen printing)、電泳法(electrophoretic deposition)(如中華民國公告號第00468041號之專利案)與化學氣相沉積法(如中華民國公開號第200535274號及公告號第00464896號之專利案)等三種製程技術,然而前述之三種製法各有其缺點,例如,網印法製成後之奈米碳管材料均勻性差、電泳法製成後之奈米碳管材料黏附性差且量產困難度高,化學氣相沉積法則具有玻璃基板無法承受高溫之缺點,而為解決上述之缺失,遂有另一種奈米碳管塗佈技術產生,其係以雷射光局部植入奈米碳管材料,不僅可在常溫下進行製程,更可令製成後之奈米碳管材料之均勻性較佳。The main carbon nanotube coating technologies in the industry at home and abroad can be mainly divided into: screen printing, electrophoretic deposition (such as the Patent of China Republic of China No. 00468041) and chemical vapor phase. Three process technologies, such as the deposition method (such as the Republic of China Publication No. 200535274 and the publication No. 00464896), however, the three methods described above each have their own shortcomings, for example, the carbon nanotube material after the screen printing process. The uniformity is poor, the carbon nanotube material prepared by electrophoresis has poor adhesion and high mass production difficulty, and the chemical vapor deposition method has the disadvantage that the glass substrate cannot withstand high temperature, and in order to solve the above deficiency, there is another kind of nanometer. The carbon tube coating technology is produced by partially implanting the carbon nanotube material with laser light, which can not only process at normal temperature, but also make the uniformity of the finished carbon nanotube material better.
惟,上述以雷射光局部植入奈米碳管材料之奈米碳管塗佈技術,若適用於大面積奈米碳管材料之植入製程,則具生產效率低之問題,此外,其在製成後之奈米碳管材料黏附性亦不佳。However, the above-mentioned nano carbon tube coating technology in which a localized carbon nanotube material is implanted by laser light, if applied to an implantation process of a large-area carbon nanotube material, has a problem of low production efficiency, and further, The adhesion of the finished carbon nanotube material is also poor.
職是,如何提供一種可大面積地植入奈米碳管材料以相應提昇生產效率,並可於植入奈米碳管材料後令該奈米碳管材料具有較佳黏附性之奈米碳管植入方法,實為此產業中亟待解決之問題。The job is to provide a nano-carbon that can be implanted in a large area to increase the production efficiency and to make the carbon nanotube material have better adhesion after implanting the carbon nanotube material. The method of tube implantation is an urgent problem to be solved in this industry.
鑒於上述習知技術之缺失,本發明之主要目的在於提供一種可大面積地植入奈米碳管材料於陰極板上之奈米碳管植入方法。In view of the above-mentioned shortcomings of the prior art, the main object of the present invention is to provide a method for implanting a carbon nanotube which can implant a carbon nanotube material on a cathode plate over a large area.
本發明之另一目的在於提供一種可提昇生產效率之奈米碳管植入方法。Another object of the present invention is to provide a method for implanting a carbon nanotube that can improve production efficiency.
本發明之又一目的在於提供一種於植入奈米碳管材料於陰極板上後,令該奈米碳管材料具有較佳黏附性之奈米碳管植入方法。Another object of the present invention is to provide a method for implanting a carbon nanotube having a better adhesion to a carbon nanotube material after implanting a carbon nanotube material on a cathode plate.
為達上述所有目的,本發明之應用於至少由陰極板(Cathode Plate)及陽極板(Anode Plate)所組成之奈米碳管發光裝置之製程中之奈米碳管植入方法係包括以下步驟:塗佈一奈米碳管材料於一承載板表面;以及提供一電磁波光源,並透過一光路系統使該電磁波光源轉換為一圖案化電磁波光束,且以該承載板表面之奈米碳管材料對應該陰極板的方式,藉由該圖案化電磁波光束推動該承載板表面之奈米碳管材料,俾令該奈米碳管材料附著於該陰極板表面。For all of the above purposes, the method for implanting a carbon nanotube in the process of a carbon nanotube light-emitting device composed of at least a cathode plate and an anode plate comprises the following steps. : coating a carbon nanotube material on a surface of a carrier plate; and providing an electromagnetic wave source, and converting the electromagnetic wave source into a patterned electromagnetic wave beam through an optical path system, and using the carbon nanotube material on the surface of the carrier plate In response to the cathode plate, the carbon nanotube material on the surface of the carrier plate is pushed by the patterned electromagnetic wave beam to adhere the carbon nanotube material to the surface of the cathode plate.
為達上述所有目的,本發明之應用於至少由陰極板(Cathode Plate)及陽極板(Anode Plate)所組成之奈米碳管發光裝置之製程中之奈米碳管植入方法係包括以下步驟:塗佈一介質材料於一承載板表面;提供一電磁波光源,並透過一光路系統使該電磁波光源轉換為一圖案化電磁波光束,且以該承載板表面之介質材料對應該陰極板的方式,藉由該圖案化電磁波光束推動該承載板表面之介質材料,俾形成一介質層於該陰極板表面;塗佈一奈米碳管材料於該承載板表面;以及提供該電磁波光源,並透過該光路系統使該電磁波光源轉換為圖案化電磁波光束,且以該承載板表面之奈米碳管材料對應該介質層的方式,藉由該圖案化電磁波光束推動該承載板表面之奈米碳管材料,俾令該奈米碳管材料附著於該介質層上。For all of the above purposes, the method for implanting a carbon nanotube in the process of a carbon nanotube light-emitting device composed of at least a cathode plate and an anode plate comprises the following steps. Coating a dielectric material on a surface of a carrier plate; providing an electromagnetic wave source, and converting the electromagnetic wave source into a patterned electromagnetic wave beam through an optical path system, and the dielectric material on the surface of the carrier plate corresponds to the cathode plate, Passing the patterned electromagnetic wave beam to push the dielectric material on the surface of the carrier plate, forming a dielectric layer on the surface of the cathode plate; coating a carbon nanotube material on the surface of the carrier plate; and providing the electromagnetic wave source and transmitting the same The optical path system converts the electromagnetic wave source into a patterned electromagnetic wave beam, and the carbon nanotube material of the surface of the carrier plate is pushed by the patterned electromagnetic wave beam in a manner that the carbon nanotube material on the surface of the carrier plate corresponds to the dielectric layer The carbon nanotube material is attached to the dielectric layer.
為達上述所有目的,本發明之應用於至少由陰極板(Cathode Plate)及陽極板(Anode Plate)所組成之奈米碳管發光裝置之製程中之奈米碳管植入方法係包括以下步驟:均勻混合一介質材料及一奈米碳管材料,並據以塗佈於一承載板表面;以及提供一電磁波光源,並透過一光路系統使該電磁波光源轉換為圖案化電磁波光束,且以該承載板表面之介質材料及奈米碳管材料之混合者對應該陰極板的方式,藉由該圖案化電磁波光束推動該承載板表面之介質材料及奈米碳管材料之混合者,俾令該介質材料及奈米碳管材料之混合者附著於該陰極板表面。For all of the above purposes, the method for implanting a carbon nanotube in the process of a carbon nanotube light-emitting device composed of at least a cathode plate and an anode plate comprises the following steps. : uniformly mixing a dielectric material and a carbon nanotube material, and coating the surface of a carrier plate; and providing an electromagnetic wave source, and converting the electromagnetic wave source into a patterned electromagnetic wave beam through an optical path system, and a mixture of the dielectric material on the surface of the carrier plate and the carbon nanotube material corresponding to the cathode plate, wherein the patterned electromagnetic wave beam pushes the mixture of the dielectric material and the carbon nanotube material on the surface of the carrier plate, A mixture of the dielectric material and the carbon nanotube material is attached to the surface of the cathode plate.
為達上述所有目的,本發明之應用於至少由陰極板(Cathode Plate)及陽極板(Anode Plate)所組成之奈米碳管發光裝置之製程中之奈米碳管植入方法係包括以下步驟:塗佈一奈米碳管材料於一承載板表面;塗佈一介質材料於該奈米碳管材料上;以及提供一電磁波光源,並透過一光路系統使該電磁波光源轉換為圖案化電磁波光束,且以該承載板表面之奈米碳管材料及該奈米碳管材料上之介質材料對應該陰極板的方式,藉由該圖案化電磁波光束推動該承載板表面之奈米碳管材料及該奈米碳管材料上之介質材料,俾形成一介質層於該陰極板表面,同時該介質層上係附著有該奈米碳管材料。For all of the above purposes, the method for implanting a carbon nanotube in the process of a carbon nanotube light-emitting device composed of at least a cathode plate and an anode plate comprises the following steps. Coating a carbon nanotube material on a surface of a carrier plate; coating a dielectric material on the carbon nanotube material; and providing an electromagnetic wave source and converting the electromagnetic wave source into a patterned electromagnetic wave beam through an optical path system And the carbon nanotube material on the surface of the carrier plate is driven by the patterned electromagnetic wave beam by using the carbon nanotube material on the surface of the carrier plate and the dielectric material on the carbon nanotube material corresponding to the cathode plate. The dielectric material on the carbon nanotube material forms a dielectric layer on the surface of the cathode plate, and the carbon nanotube material is attached to the dielectric layer.
相較於習知技術,本發明之奈米碳管植入方法主要係透過該光路系統轉換所得之圖案化電磁波光束,可大面積地植入奈米碳管材料於該陰極板上,相應地,則可提昇生產效率,俾達上揭之主要及另一目的,此外,透過上揭之介質材料更可於植入奈米碳管材料於陰極板上後,提高該奈米碳管材料之黏附性,俾達上揭之又一目的。Compared with the prior art, the carbon nanotube implantation method of the present invention mainly converts the patterned electromagnetic wave beam obtained by the optical path system, and can implant the carbon nanotube material on the cathode plate over a large area, correspondingly , which can improve the production efficiency, and the main purpose and the other purpose of the invention. In addition, the dielectric material can be improved by implanting the carbon nanotube material on the cathode plate. Adhesiveness, another purpose of the company.
以下係藉由特定的具體實例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點與功效。本發明亦可藉由其他不同的具體實例加以施行或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明之精神下進行各種修飾與變更。The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate other advantages and functions of the present invention from the disclosure herein. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes may be made without departing from the spirit and scope of the invention.
請參閱第1A至1C圖,其係為本發明奈米碳管植入方法之第一實施例之操作流程示意圖。該奈米碳管植入方法係應用於奈米碳管發光裝置,如奈米碳管場發射背光板(CNT-BLU)或奈米碳管顯示器之製程中,其中,該奈米碳管發光裝置至少由陰極板(Cathode Plate)10及陽極板(Anode Plate)所組成。於本實施例中,該奈米碳管場發射背光板係可應用於各種平面顯示器(FPD)中,如液晶顯示器(Liquid Crystal Display;LCD)中之背光模組,但並非以此為限。Please refer to FIGS. 1A to 1C , which are schematic diagrams showing the operation of the first embodiment of the carbon nanotube implantation method of the present invention. The carbon nanotube implantation method is applied to a carbon nanotube light-emitting device, such as a carbon nanotube field emission backlight (CNT-BLU) or a carbon nanotube display, wherein the carbon nanotube emits light. The apparatus is composed of at least a cathode plate 10 and an anode plate. In this embodiment, the carbon nanotube field emission backlight panel can be applied to various flat panel displays (FPDs), such as a backlight module in a liquid crystal display (LCD), but is not limited thereto.
如第1A圖所示,該奈米碳管植入方法係先塗佈一奈米碳管材料20於一承載板21表面。接著如第1B圖所示,先提供一電磁波光源22,並透過一光路系統23使該電磁波光源22轉換為一圖案化電磁波光束24,且以該承載板21表面之奈米碳管材料20對應該陰極板10的方式,藉由該圖案化電磁波光束24推動該承載板21表面之奈米碳管材料20,最後如第1C圖所示,俾令該奈米碳管材料20附著於該陰極板10表面。As shown in FIG. 1A, the carbon nanotube implantation method first coats a carbon nanotube material 20 on the surface of a carrier plate 21. Next, as shown in FIG. 1B, an electromagnetic wave source 22 is first provided, and the electromagnetic wave source 22 is converted into a patterned electromagnetic wave beam 24 through an optical path system 23, and 20 pairs of carbon nanotube materials on the surface of the carrier plate 21 are provided. In the manner of the cathode plate 10, the carbon nanotube material 20 on the surface of the carrier 21 is pushed by the patterned electromagnetic wave beam 24, and finally, as shown in FIG. 1C, the carbon nanotube material 20 is attached to the cathode. The surface of the board 10.
請一同配合第2圖所示,於本實施例中,該陰極板10係由玻璃基板100、形成於該玻璃基板100上之陰極101及閘極102所組成,且於該奈米碳管植入方法執行完成後,該奈米碳管材料20係附著於該陰極101表面;由圖中可知,該電磁波光源22經該光路系統23轉換後所得之圖案化電磁波光束24係為配合該陰極板10之陰極101形狀而為線型電磁波光束(長條狀),但並非以此為限。In the present embodiment, the cathode plate 10 is composed of a glass substrate 100, a cathode 101 formed on the glass substrate 100, and a gate 102, and is implanted in the carbon nanotube. After the completion of the method, the carbon nanotube material 20 is attached to the surface of the cathode 101. As can be seen from the figure, the patterned electromagnetic wave beam 24 obtained by the electromagnetic wave source 22 is converted by the optical path system 23 to match the cathode plate. The cathode 101 of the shape of 10 is a linear electromagnetic wave beam (long strip shape), but is not limited thereto.
又如第3圖所示,若多次執行該奈米碳管植入方法後,則可將該奈米碳管場發射背光板上之陰極板10上之所有陰極101表面皆植入有該奈米碳管材料20,此外,該奈米碳管材料20中更包括有一與該奈米碳管材料20中之奈米碳管混合之高分子材料,其中,該高分子材料係具有流動性,以使該高分子材料上之每一個分子鍵上之分子會獨立吸附一根奈米碳管,再者,該電磁波光源22係為一全波段雷射或一紫外光波雷射(UV Light Laser)。需附加說明的是,該光路系統23亦可搭配如反射鏡或聚焦鏡等光學元件以調整該圖案化電磁波光束24之光傳導路逕至該承載板21,俾植入該奈米碳管材料20於該陰極板10表面。As shown in FIG. 3, after the carbon nanotube implantation method is performed a plurality of times, the surface of all the cathodes 101 on the cathode plate 10 of the carbon nanotube field emission backlight plate may be implanted. The carbon nanotube material 20, in addition, the carbon nanotube material 20 further includes a polymer material mixed with the carbon nanotubes in the carbon nanotube material 20, wherein the polymer material has fluidity So that the molecules on each molecular bond of the polymer material independently adsorb a carbon nanotube, and the electromagnetic wave source 22 is a full-band laser or an ultraviolet light laser (UV Light Laser) ). It should be noted that the optical path system 23 can also be combined with an optical component such as a mirror or a focusing mirror to adjust the optical conduction path of the patterned electromagnetic wave beam 24 to the carrier plate 21, and the carbon nanotube material 20 is implanted. On the surface of the cathode plate 10.
另請參閱第4及5圖,復可於藉由該圖案化電磁波光束24推動該承載板21表面之奈米碳管材料20時,依需求藉由遮罩之方式,如利用光罩25遮蔽部分該圖案化電磁波光束24,以使該光罩25未遮蔽之圖案化電磁波光束24可將部份該奈米碳管材料20植入於特定之區域(如陰極板10之陰極101表面),而此種配合該光罩25之奈米碳管植入方法係可應用於奈米碳管顯示器之修補及大面積雷射直接植入奈米碳管之製程中,當然,於實際實施時,該光罩25係可依需求調整其擺設位置,且亦可增加其實施數量並透過組合或疊加等方式產生所需的遮蔽效果,並非以圖中所示者為限。需予以說明的是,第4及5圖係以奈米碳管場發射顯示器(CNT-FED)為例,其中,第4圖係將該光罩25設置於承載板21上,第5圖係將該光罩25設置於垂直式三極結構(包括玻璃基板100、絕緣層103及閘極102)上方。Referring to FIGS. 4 and 5, when the carbon nanotube material 20 on the surface of the carrier 21 is pushed by the patterned electromagnetic wave beam 24, it can be shielded by a mask, such as by using a mask 25, as needed. Part of the patterned electromagnetic wave beam 24 such that the patterned electromagnetic wave beam 24 unmasked by the reticle 25 can partially implant the carbon nanotube material 20 in a specific region (such as the surface of the cathode 101 of the cathode plate 10). The method for implanting the carbon nanotubes with the mask 25 can be applied to the repair of the carbon nanotube display and the direct implantation of the large-area laser into the carbon nanotube process. Of course, in actual implementation, The reticle 25 can adjust its arranging position according to requirements, and can also increase the number of implementations thereof and generate the desired shielding effect by combining or superimposing, etc., not limited to those shown in the figure. It should be noted that the fourth and fifth figures are exemplified by a carbon nanotube field emission display (CNT-FED), wherein the fourth picture is that the photomask 25 is disposed on the carrier plate 21, and FIG. The photomask 25 is disposed above the vertical three-pole structure (including the glass substrate 100, the insulating layer 103, and the gate 102).
復請參閱第6A至6F圖,其係為本發明奈米碳管植入方法之第二實施例之操作流程示意圖。該奈米碳管植入方法係應用於奈米碳管發光裝置,如奈米碳管場發射背光板(CNT-BLU)或奈米碳管顯示器之製程中,其中,該奈米碳管發光裝置至少由陰極板(Cathode Plate)10及陽極板(Anode Plate)所組成。於本實施例中,該奈米碳管場發射背光板係可應用於各種平面顯示器(FPD)中,如液晶顯示器(Liquid Crystal Display;LCD)中之背光模組,但並非以此為限。Please refer to FIG. 6A to FIG. 6F, which are schematic diagrams showing the operation of the second embodiment of the carbon nanotube implantation method of the present invention. The carbon nanotube implantation method is applied to a carbon nanotube light-emitting device, such as a carbon nanotube field emission backlight (CNT-BLU) or a carbon nanotube display, wherein the carbon nanotube emits light. The apparatus is composed of at least a cathode plate 10 and an anode plate. In this embodiment, the carbon nanotube field emission backlight panel can be applied to various flat panel displays (FPDs), such as a backlight module in a liquid crystal display (LCD), but is not limited thereto.
如第6A圖所示,該奈米碳管植入方法係先塗佈一介質材料26於一承載板21表面。接著如第6B圖所示,先提供一電磁波光源22,並透過一光路系統23使該電磁波光源22轉換為一圖案化電磁波光束24,且以該承載板21表面之介質材料26對應該陰極板10的方式,藉由該圖案化電磁波光束24推動該承載板21表面之介質材料26,藉此如第6C圖所示,俾形成一介質層於該陰極板10表面,接續,如第6D圖所示,塗佈一奈米碳管材料20於該承載板21表面,最後,如第6E圖所示,再次提供該電磁波光源22,並透過該光路系統23使該電磁波光源22轉換為圖案化電磁波光束24,且以該承載板21表面之奈米碳管材料20對應該介質層的方式,藉由該圖案化電磁波光束24推動該承載板21表面之奈米碳管材料20,俾如第6F圖所示,令該奈米碳管材料20附著於該介質層上俾令該奈米碳管材料20附著於該陰極板10表面。As shown in FIG. 6A, the carbon nanotube implantation method first coats a dielectric material 26 on the surface of a carrier plate 21. Next, as shown in FIG. 6B, an electromagnetic wave source 22 is first provided, and the electromagnetic wave source 22 is converted into a patterned electromagnetic wave beam 24 through an optical path system 23, and the dielectric material 26 on the surface of the carrier plate 21 corresponds to the cathode plate. In a manner of 10, the patterned electromagnetic wave beam 24 pushes the dielectric material 26 on the surface of the carrier plate 21, whereby as shown in FIG. 6C, a dielectric layer is formed on the surface of the cathode plate 10, as shown in FIG. 6D. As shown, a carbon nanotube material 20 is coated on the surface of the carrier 21, and finally, as shown in FIG. 6E, the electromagnetic wave source 22 is again provided, and the electromagnetic wave source 22 is converted into a pattern by the optical path system 23. The electromagnetic wave beam 24, and the carbon nanotube material 20 on the surface of the carrier plate 21 corresponds to the dielectric layer, and the carbon nanotube material 20 on the surface of the carrier plate 21 is pushed by the patterned electromagnetic wave beam 24, for example, As shown in Fig. 6F, the carbon nanotube material 20 is attached to the dielectric layer to cause the carbon nanotube material 20 to adhere to the surface of the cathode plate 10.
於本實施例中,該陰極板10係由玻璃基板100、形成於該玻璃基板100上之陰極101及閘極102所組成,且於該奈米碳管植入方法執行完成後,該介質層係形成於該陰極101表面,此外,該介質材料26係為具有導電性及黏著性之材料,例如為導電銀膠材料等,而該電磁波光源22係為一全波段雷射或一紫外光波雷射(UV Light Laser),且該奈米碳管材料20中更包括有一與該奈米碳管材料20中之奈米碳管混合之高分子材料,其中,該高分子材料係具有流動性,以使該高分子材料上之每一個分子鍵上之分子會獨立吸附一根奈米碳管,再者,此第二實施例係如同第一實施例,亦可於藉由該圖案化電磁波光束24推動該承載板21表面之介質材料26及奈米碳管材料20時,依需求藉由光罩遮蔽部分該圖案化電磁波光束24,而此種配合光罩之奈米碳管植入方法係可應用於奈米碳管顯示器之修補及大面積雷射直接植入奈米碳管之製程中,當然,於實際實施時,該光罩係可依需求調整其擺設位置,且亦可增加其實施數量並透過組合或疊加等方式產生所需的遮蔽效果。In the embodiment, the cathode plate 10 is composed of a glass substrate 100, a cathode 101 formed on the glass substrate 100, and a gate 102. After the carbon nanotube implantation method is completed, the dielectric layer is completed. The dielectric material 26 is formed on the surface of the cathode 101. Further, the dielectric material 26 is made of a conductive and adhesive material, such as a conductive silver paste material, and the electromagnetic wave source 22 is a full-band laser or an ultraviolet light-ray. And a UV light laser, wherein the carbon nanotube material 20 further comprises a polymer material mixed with the carbon nanotubes in the carbon nanotube material 20, wherein the polymer material has fluidity. So that the molecules on each molecular bond on the polymer material independently adsorb a carbon nanotube. Further, the second embodiment is like the first embodiment, and the patterned electromagnetic wave beam can also be used. When the dielectric material 26 and the carbon nanotube material 20 on the surface of the carrier 21 are pushed, the patterned electromagnetic wave beam 24 is shielded by the reticle as needed, and the nano-carbon tube implantation method of the conjugate is used. Can be applied to the repair of carbon nanotube displays And the large-area laser is directly implanted into the process of the carbon nanotubes. Of course, in actual implementation, the reticle can adjust its position according to requirements, and can also increase the number of implementations and generate them by combination or superposition. The desired shading effect.
又請參閱第7A至7C圖,其係為本發明奈米碳管植入方法之第三實施例之操作流程示意圖。該奈米碳管植入方法係應用於奈米碳管發光裝置,如奈米碳管場發射背光板(CNT-BLU)或奈米碳管顯示器之製程中,其中,該奈米碳管發光裝置至少由陰極板(Cathode Plate)10及陽極板(Anode Plate)所組成。於本實施例中,該奈米碳管場發射背光板係可應用於各種平面顯示器(FPD)中,如液晶顯示器(Liquid Crystal Display;LCD)中之背光模組,但並非以此為限。Please also refer to FIGS. 7A to 7C, which are schematic diagrams showing the operation of the third embodiment of the carbon nanotube implantation method of the present invention. The carbon nanotube implantation method is applied to a carbon nanotube light-emitting device, such as a carbon nanotube field emission backlight (CNT-BLU) or a carbon nanotube display, wherein the carbon nanotube emits light. The apparatus is composed of at least a cathode plate 10 and an anode plate. In this embodiment, the carbon nanotube field emission backlight panel can be applied to various flat panel displays (FPDs), such as a backlight module in a liquid crystal display (LCD), but is not limited thereto.
如第7A圖所示,該奈米碳管植入方法係先均勻混合一介質材料及一奈米碳管材料,並據以塗佈於一承載板21表面(介質材料及奈米碳管材料之混合者27)。接著如第7B圖所示,先提供一電磁波光源22,並透過一光路系統23使該電磁波光源22轉換為圖案化電磁波光束24,且以該承載板21表面之介質材料及奈米碳管材料之混合者27對應該陰極板10的方式,藉由該圖案化電磁波光束24推動該承載板21表面之介質材料及奈米碳管材料之混合者27,俾如第7C圖所示,令該介質材料及奈米碳管材料之混合者27附著於該陰極板10表面。As shown in FIG. 7A, the carbon nanotube implantation method first uniformly mixes a dielectric material and a carbon nanotube material, and is coated on the surface of a carrier plate 21 (dielectric material and carbon nanotube material). Mixer 27). Next, as shown in FIG. 7B, an electromagnetic wave source 22 is first provided, and the electromagnetic wave source 22 is converted into a patterned electromagnetic wave beam 24 through an optical path system 23, and the dielectric material and the carbon nanotube material on the surface of the carrier plate 21 are used. The mixer 27 corresponds to the cathode plate 10, and the patterned electromagnetic wave beam 24 pushes the mixture of the dielectric material and the carbon nanotube material on the surface of the carrier 21, as shown in FIG. 7C. A mixture of dielectric material and carbon nanotube material 27 is attached to the surface of the cathode plate 10.
於本實施例中,該陰極板10係至少由玻璃基板100及形成於該玻璃基板100上之陰極101所組成,且於該奈米碳管植入方法執行完成後,該介質材料及奈米碳管材料之混合者27係附著於該陰極101表面,此外,該介質材料係為具有導電性及黏著性之材料,例如為導電銀膠材料等,而該奈米碳管材料中更包括有一與該奈米碳管材料中之奈米碳管混合之高分子材料,其中,該高分子材料係具有流動性,以使該高分子材料上之每一個分子鍵上之分子會獨立吸附一根奈米碳管,且該電磁波光源22係為一全波段雷射或一紫外光波雷射(UV Light Laser),再者,此第三實施例係如同第一及二實施例,亦可於藉由該圖案化電磁波光束24推動該承載板21表面之介質材料及奈米碳管材料之混合者27時,依需求藉由光罩遮蔽部分該圖案化電磁波光束24,而此種配合光罩之奈米碳管植入方法係可應用於奈米碳管顯示器之修補及大面積雷射直接植入奈米碳管之製程中,當然,於實際實施時,該光罩係可依需求調整其擺設位置,且亦可增加其實施數量並透過組合或疊加等方式產生所需的遮蔽效果。In the embodiment, the cathode plate 10 is composed of at least a glass substrate 100 and a cathode 101 formed on the glass substrate 100, and after the carbon nanotube implantation method is completed, the dielectric material and the nanometer. A carbon nanotube material mixture 27 is attached to the surface of the cathode 101. Further, the dielectric material is a conductive and adhesive material, such as a conductive silver rubber material, and the carbon nanotube material further includes a carbon nanotube material. a polymer material mixed with a carbon nanotube in the carbon nanotube material, wherein the polymer material has fluidity such that molecules on each molecular bond on the polymer material independently adsorb one a carbon nanotube, and the electromagnetic wave source 22 is a full-band laser or a UV light laser. Furthermore, the third embodiment is similar to the first and second embodiments. When the patterned electromagnetic wave beam 24 pushes the dielectric material of the surface of the carrier plate 21 and the mixture of the carbon nanotube materials 27, the patterned electromagnetic wave beam 24 is shielded by the reticle as needed, and the conjugate mask is used. Nano carbon tube implantation method It can be applied to the repair of carbon nanotube display and the direct implantation of large-area laser into the process of carbon nanotubes. Of course, in actual implementation, the reticle can adjust its position according to requirements, and can also increase its Implement the quantity and create the desired shading effect by combining or superimposing.
再請參閱第8A至8D圖,其係為本發明奈米碳管植入方法之第四實施例之操作流程示意圖。該奈米碳管植入方法係應用於奈米碳管發光裝置,如奈米碳管場發射背光板(CNT-BLU)或奈米碳管顯示器之製程中,其中,該奈米碳管發光裝置至少由陰極板(Cathode Plate)10及陽極板(Anode Plate)所組成。於本實施例中,該奈米碳管場發射背光板係可應用於各種平面顯示器(FPD)中,如液晶顯示器(Liquid Crystal Display;LCD)中之背光模組,但並非以此為限。Referring again to FIGS. 8A to 8D, which are schematic diagrams showing the operation of the fourth embodiment of the carbon nanotube implantation method of the present invention. The carbon nanotube implantation method is applied to a carbon nanotube light-emitting device, such as a carbon nanotube field emission backlight (CNT-BLU) or a carbon nanotube display, wherein the carbon nanotube emits light. The apparatus is composed of at least a cathode plate 10 and an anode plate. In this embodiment, the carbon nanotube field emission backlight panel can be applied to various flat panel displays (FPDs), such as a backlight module in a liquid crystal display (LCD), but is not limited thereto.
如第8A圖所示,該奈米碳管植入方法係先塗佈一奈米碳管材料20於一承載板21表面。接著如第8B圖所示,塗佈一介質材料26於該奈米碳管材料20上,之後如第8C圖所示,先提供一電磁波光源22,並透過一光路系統23使該電磁波光源22轉換為圖案化電磁波光束24,且以該承載板21表面之奈米碳管材料20及該奈米碳管材料20上之介質材料26對應該陰極板10的方式,藉由該圖案化電磁波光束24推動該承載板21表面之奈米碳管材料20及該奈米碳管材料20上之介質材料26,俾如第8D圖所示,形成一介質層於該陰極板10表面,同時該介質層上係附著有該奈米碳管材料20。As shown in FIG. 8A, the carbon nanotube implantation method first coats a carbon nanotube material 20 on the surface of a carrier plate 21. Next, as shown in FIG. 8B, a dielectric material 26 is coated on the carbon nanotube material 20, and then, as shown in FIG. 8C, an electromagnetic wave source 22 is first provided, and the electromagnetic wave source 22 is transmitted through an optical path system 23. Converting into a patterned electromagnetic wave beam 24, and by patterning the electromagnetic wave beam with the carbon nanotube material 20 on the surface of the carrier plate 21 and the dielectric material 26 on the carbon nanotube material 20 corresponding to the cathode plate 10 24 pushing the carbon nanotube material 20 on the surface of the carrier plate 21 and the dielectric material 26 on the carbon nanotube material 20, as shown in FIG. 8D, forming a dielectric layer on the surface of the cathode plate 10 while the medium The carbon nanotube material 20 is attached to the layer.
於本實施例中,該陰極板10係至少由玻璃基板100及形成於該玻璃基板100上之陰極101所組成,且於該奈米碳管植入方法執行完成後,該介質層係形成於該陰極101表面,此外,該奈米碳管材料20中更包括有一與該奈米碳管材料20中之奈米碳管混合之高分子材料,其中,該高分子材料係具有流動性,以使該高分子材料上之每一個分子鍵上之分子會獨立吸附一根奈米碳管,而該介質材料26係為具有導電性及黏著性之材料,例如為導電銀膠材料等,且該電磁波光源22係為一全波段雷射或一紫外光波雷射(UV Light Laser),再者,此第四實施例係如同第一、二及三實施例,亦可於藉由該圖案化電磁波光束24推動該承載板21表面之奈米碳管材料20及該奈米碳管材料20上之介質材料26時,依需求藉由光罩遮蔽部分該圖案化電磁波光束24,而此種配合光罩之奈米碳管植入方法係可應用於奈米碳管顯示器之修補及大面積雷射直接植入奈米碳管之製程中,當然,於實際實施時,該光罩係可依需求調整其擺設位置,且亦可增加其實施數量並透過組合或疊加等方式產生所需的遮蔽效果。In this embodiment, the cathode plate 10 is composed of at least a glass substrate 100 and a cathode 101 formed on the glass substrate 100, and after the carbon nanotube implantation method is completed, the dielectric layer is formed on the cathode layer. The surface of the cathode 101 further includes a polymer material mixed with the carbon nanotubes in the carbon nanotube material 20, wherein the polymer material has fluidity to The molecules on each molecular bond of the polymer material independently adsorb a carbon nanotube, and the dielectric material 26 is a conductive and adhesive material, such as a conductive silver rubber material, and the like The electromagnetic wave source 22 is a full-band laser or a UV light laser. Furthermore, the fourth embodiment is like the first, second and third embodiments, and the patterned electromagnetic wave can also be used. When the light beam 24 pushes the carbon nanotube material 20 on the surface of the carrier plate 21 and the dielectric material 26 on the surface of the carbon nanotube material 20, the patterned electromagnetic wave beam 24 is shielded by the reticle as needed, and the light is matched. Covered carbon nanotube implant method It is used in the repair of carbon nanotube display and the direct implantation of large-area laser into the process of carbon nanotubes. Of course, in actual implementation, the reticle can adjust its position according to requirements, and can also increase its implementation. The quantity and the desired shading effect are produced by combining or superimposing.
需附加說明的是,上揭之所有實施例中之塗佈程序係可透過旋轉塗佈等精密塗佈技術予以進行,但並非以此為限。It should be noted that the coating procedure in all of the above embodiments can be carried out by a precision coating technique such as spin coating, but is not limited thereto.
綜上所述,本發明之奈米碳管植入方法主要係透過該光路系統轉換所得之圖案化電磁波光束,可大面積地植入奈米碳管材料於該陰極板上,相應地,則可提昇生產效率,此外,透過上揭之具有導電性及黏著性之介質材料更可於植入奈米碳管材料於陰極板上後,提高該奈米碳管材料之黏附性,當然,本發明之奈米碳管植入方法亦可於常溫下操作且製成後之奈米碳管材料係具較佳之均勻性。In summary, the carbon nanotube implantation method of the present invention mainly converts the patterned electromagnetic wave beam obtained by the optical path system, and can implant the carbon nanotube material on the cathode plate over a large area, and correspondingly, It can improve the production efficiency. In addition, the conductive material with conductivity and adhesion can be used to improve the adhesion of the carbon nanotube material after implanting the carbon nanotube material on the cathode plate. The inventive carbon nanotube implantation method can also be operated at normal temperature and the finished carbon nanotube material has better uniformity.
上述實施例僅例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修飾與改變。因此,本發明之權利保護範圍,應如後述之申請專利範圍所列。The above-described embodiments are merely illustrative of the principles of the invention and its effects, and are not intended to limit the invention. Modifications and variations of the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.
10...陰極板10. . . Cathode plate
100...玻璃基板100. . . glass substrate
101...陰極101. . . cathode
102...閘極102. . . Gate
103...絕緣層103. . . Insulation
20...奈米碳管材料20. . . Nano carbon tube material
21...承載板twenty one. . . Carrier board
22...電磁波光源twenty two. . . Electromagnetic wave source
23...光路系統twenty three. . . Optical path system
24...圖案化電磁波光束twenty four. . . Patterned electromagnetic wave beam
25...光罩25. . . Mask
26...介質材料26. . . Dielectric material
27...介質材料及奈米碳管材料之混合者27. . . Mixture of dielectric materials and carbon nanotube materials
第1A至1C圖係為本發明奈米碳管植入方法之第一實施例之操作流程示意圖;第2圖係為第1C圖之俯視示意圖;第3圖係為本發明奈米碳管植入方法之第一實施例應用於奈米碳管場發射背光板且執行完成後之側視狀態示意圖;第4及5圖係為本發明奈米碳管植入方法之第一實施例配合遮罩加以實施之示意圖;第6A至6F圖係為本發明奈米碳管植入方法之第二實施例之操作流程示意圖;第7A至7C圖係為本發明奈米碳管植入方法之第三實施例之操作流程示意圖;以及第8A至8D圖係為本發明奈米碳管植入方法之第四實施例之操作流程示意圖。1A to 1C are schematic views showing the operation of the first embodiment of the carbon nanotube implantation method of the present invention; FIG. 2 is a schematic plan view of FIG. 1C; and FIG. 3 is a carbon nanotube implant of the present invention. The first embodiment of the method is applied to a carbon nanotube field emission backlight board and is a schematic view of a side view after completion of the process; and FIGS. 4 and 5 are the first embodiment of the carbon nanotube implantation method of the present invention. FIG. 6A to FIG. 6F are schematic diagrams showing the operation of the second embodiment of the carbon nanotube implantation method of the present invention; and FIGS. 7A to 7C are the first embodiment of the carbon nanotube implantation method of the present invention. FIG. 8A to FIG. 8D are schematic diagrams showing the operation flow of the fourth embodiment of the carbon nanotube implantation method of the present invention.
10...陰極板10. . . Cathode plate
100...玻璃基板100. . . glass substrate
101...陰極101. . . cathode
20...奈米碳管材料20. . . Nano carbon tube material
21...承載板twenty one. . . Carrier board
22...電磁波光源twenty two. . . Electromagnetic wave source
23...光路系統twenty three. . . Optical path system
24...圖案化電磁波光束twenty four. . . Patterned electromagnetic wave beam
Claims (42)
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US4970196A (en) * | 1987-01-15 | 1990-11-13 | The Johns Hopkins University | Method and apparatus for the thin film deposition of materials with a high power pulsed laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4970196A (en) * | 1987-01-15 | 1990-11-13 | The Johns Hopkins University | Method and apparatus for the thin film deposition of materials with a high power pulsed laser |
Non-Patent Citations (1)
| Title |
|---|
| Chang-Jianetal.,"Fabricationofcarbonnanotubefieldemissioncathodesinpatternsbyalasertransfermethod",Nanotechnologyv17,p1184~1187,2006/2/7 * |
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