TWI400521B - Repair structrue and active device array substrate - Google Patents

Description

Repair structure and active device array substrate

The present invention relates to a repair structure, and more particularly to a repair structure capable of achieving a good repair effect, and an active device array substrate having the repair structure.

In the process of manufacturing an active device array substrate of a liquid crystal display, some defects are inevitably generated. If these active active device array substrates are directly discarded, the manufacturing cost is greatly increased. In general, these defects can be detected by an array test and repaired by repair techniques such as laser welding or laser cutting.

Fig. 1A is a schematic view showing the repair structure of the Republic of China Patent Publication No. 583767. Referring to FIG. 1A, in the repair structure 100, the data line 110 corresponds to a plurality of branching branch lines 110a, 110b corresponding to the area above the scan line 120. When a short circuit occurs between the scanning wiring and the signal wiring, it can be repaired by cutting off part of the branch wiring. When a short circuit occurs between the scanning line 120 and the data line 110, it can be repaired by cutting off part of the branch wiring 110b. However, the above manner cannot repair the situation in which the scan line 120 is broken.

Figure 1B is a schematic view of the repair structure of the Republic of China Patent Publication No. I282625. Referring to FIG. 1B, the repair structure 150 includes conductive patterns 151, 152 and transparent electrodes 153, wherein the conductive patterns 151, 152 are connected to the line segments 140A, 140B, respectively. As shown in FIG. 1B, when a short circuit occurs between the scan lines (consisting of the line segments 140A, 140B, and 140C) and the data line 130, the connection of the line segment 140C to the line segments 140A, 140B can be cut and the laser welded In a manner, the transparent electrode 153 is electrically connected to the conductive patterns 151, 152 at the connection points 154, 155, that is, the line segments 140A and 140B are electrically connected by the transparent electrode 153, and the short-circuited line segment 140C is avoided. However, the above repair method has the following problems: First, if the data line is broken at the interlaced position, it cannot be repaired. Next, the material of the transparent electrode 153 is indium tin oxide, and its resistivity is high. Therefore, when the signal passes through the transparent electrode 153, signal distortion occurs. Further, since the transparent electrode 153 has a low hardness and a small thickness, it is less able to withstand the irradiation of the laser light, and the repairing effect is poor.

In view of this, the present invention provides a repair structure that can effectively repair electrical failures of scan lines and data lines at staggered positions.

The present invention also provides an active device array substrate having the above-mentioned repair structure, which can improve the fabrication yield of the active device array substrate.

Based on the above, the present invention provides a repair structure for repairing electrical failures on a scan line or a data line, wherein the scan lines and the data lines are staggered with each other and electrically insulated from each other, and the repair structure surrounds the intersection of the scan lines and the data lines. . The repairing structure includes: a first repairing line and a second repairing line. The first repair line is perpendicular to the scan line, and the first repair line and the scan line are the same film layer. The second repairing line is perpendicular to the data line, and the second repairing line and the data line are the same film layer. When the electrical failure point on the data line is repaired, the first repairing line and the scanning line are electrically insulated from each other, and the first repairing line and the data line are jumpered to form a first conductive path. When the electrical failure point on the scan line is repaired, the second repair line and the data line are electrically insulated from each other, and the second repair line is jumpered to the scan line to form a second conductive path.

The invention further provides an active device array substrate, comprising: a scan line, a data line, a repair structure and an active component. The scan lines and the data lines are staggered with each other and electrically insulated from each other. The repair structure is used to repair electrical failures on the scan lines or data lines, and the repair structure surrounds the intersection of the scan lines and the data lines. The repairing structure includes: a first repairing line and a second repairing line. The first repair line is perpendicular to the scan line, and the first repair line and the scan line are the same film layer. The second repairing line is perpendicular to the data line, and the second repairing line and the data line are the same film layer. When the electrical failure point on the data line is repaired, the first repairing line and the scanning line are electrically insulated from each other, and the first repairing line and the data line are jumpered to form a first conductive path. When the electrical failure point on the scan line is repaired, the second repair line and the data line are electrically insulated from each other, and the second repair line is jumpered to the scan line to form a second conductive path. The active component is electrically connected to the corresponding scan line and data line.

In an embodiment of the invention, the first conductive path is parallel to the data line and is located on the right side of the data line, and the second conductive path is parallel to the scan line and located on the lower side of the scan line.

In an embodiment of the invention, the first conductive path is parallel to the data line and is located on the right side of the data line, and the second conductive path is parallel to the scan line and is located above the scan line.

In an embodiment of the invention, the first conductive path is parallel to the data line and is located on the left side of the data line, and the second conductive path is parallel to the scan line and located on the lower side of the scan line.

In an embodiment of the invention, the first conductive path is parallel to the data line and is located on the left side of the data line, and the second conductive path is parallel to the scan line and is located above the scan line.

In an embodiment of the invention, the first conductive path further includes: two first conductive patterns extending from the data line. Moreover, the first conductive patterns are respectively disposed at both ends of the first repairing line, and are electrically connected to the first repairing line.

In an embodiment of the invention, the second conductive path further includes: two second conductive patterns extending from the scan line. Moreover, the second conductive patterns are respectively disposed at two ends of the second repairing line and electrically connected to the second repairing line.

In an embodiment of the invention, the repairing structure further includes: a third repairing line and a fourth repairing line. The third repair line is perpendicular to the scan line, and the third repair line and the scan line are the same film layer. The fourth repairing line is perpendicular to the data line, and the fourth repairing line and the data line are the same film layer. When the electrical failure of the data line is repaired, the third repairing line and the scanning line are electrically insulated from each other, and the third repairing line is connected to the data line by a layer jumper to form a third conductive path. When the electrical failure point on the scan line is repaired, the fourth repair line and the data line are electrically insulated from each other, and the fourth repair line is jumpered to the scan line to form a fourth conductive path.

In an embodiment of the invention, the third conductive path further includes: two third conductive patterns extending from the data line. Moreover, the third conductive patterns are respectively disposed at both ends of the third repairing line and electrically connected to the third repairing line.

In an embodiment of the invention, the fourth conductive path further includes: two fourth conductive patterns extending from the scan line. Moreover, the fourth conductive patterns are respectively disposed at both ends of the fourth repairing line, and are electrically connected to the fourth repairing line.

In the repairing structure of the present invention, at least one repairing line for repairing the data line is simultaneously formed in the same process of manufacturing the scanning line, and at least one repairing line for repairing the scanning line is additionally formed in the same process of making the data line. When the scan line and the data line are electrically failed at the intersection, the scan line and the data line are connected to the corresponding repair line by a layer jumper. The repair structure described above can repair the scan lines and the data lines, and can be effectively repaired even if the electrical failure is located at the interlaced position between the scan lines and the data lines. In addition, the corresponding repairing line is the same as the material of the scanning line and the data line, which is beneficial to the laser welding and can achieve a good repairing effect.

The above described features and advantages of the invention will be apparent from the following description.

In order to more clearly understand the technical content of the present invention, in the following embodiments, terms such as "up, down, left, and right" are used to describe the relative positions of the conductive paths on the substrate. However, the terms "upper, lower, left, right" and the like are not intended to limit the invention, and it is within the scope of the invention to make appropriate modifications made by those skilled in the art after understanding the spirit of the invention.

2 is a top plan view of an active device array substrate 200 in accordance with a preferred embodiment of the present invention. Referring to FIG. 2, the active device array substrate 200 includes a substrate 210, a plurality of scan lines 220, a plurality of data lines 230, a plurality of repair structures 240, and an active device TFT (such as a thin film transistor). The scan line 220, the data line 230, and the repair structure 240 are all disposed on the substrate 210. The scan lines 220 and the data lines 230 are staggered with each other and electrically insulated from each other. The active device TFT is electrically connected to the corresponding scan line 220 and the data line 230. The active device array substrate 200 may further include a pixel electrode PE that is controlled by the active device TFT and electrically connected to the corresponding scan line 220 and data line 230.

As shown in area A of FIG. 2, the repair structure 240 is used to repair electrical failures (such as shorts or broken lines) on the scan line 220 or the data line 230, and the repair structure 240 is interleaved around the scan line 220 and the data line 230. At the office. It should be noted that the repair structure 240 used in the active device array substrate 200 may include: a first repair line 241, a second repair line 242, a third repair line 243, a fourth repair line 244, and a first conductor pattern. 241a, 241b, second conductor patterns 242a, 242b, third conductor patterns 243a, 243b, and fourth conductor patterns 244a, 244b.

In more detail, the first repairing line 241 is perpendicular to the scanning line 220, and the first repairing line 241 and the scanning line 220 are the same film layer; the second repairing line 242 is perpendicular to the data line 230, and the second repairing line 242 and the data The line 230 is the same film layer; the third repair line 243 is perpendicular to the scan line 220, and the third repair line 243 and the scan line 220 are the same film layer; the fourth repair line 244 is perpendicular to the data line 230, and the fourth repair line 244 The data line 230 is the same film layer.

Furthermore, the two first conductive patterns 241a, 241b extend from the data line 230. The two first conductive patterns 241a, 241b are respectively disposed at two ends of the first repairing line 241 for electrical properties during repair. Connected to the first repairing line 241, in particular, the first conductive patterns 241a, 241b respectively overlap the two ends of the first repairing line 241; the two second conductive patterns 242a, 242b extend from the scanning line 220, the two The second conductive patterns 242a and 242b are respectively disposed at two ends of the second repairing line 242 for electrically connecting to the second repairing line 242 during the repairing. In particular, the second conductive patterns 242a and 242b are respectively repaired by the second repairing line. The two ends of the line 242 are overlapped; the two third conductive patterns 243a, 243b are extended from the data line 230, and the two third conductive patterns 243a, 243b are respectively disposed at the two ends of the third repairing line 243 for performing The repairing is electrically connected to the third repairing line 243. In particular, the third conductive patterns 243a, 243b overlap the two ends of the third repairing line 243, respectively; the two fourth conductive patterns 244a, 244b extend from the scanning line 220. The two fourth conductive patterns 244a, 244b are respectively The two ends of the fourth repairing line 244 are electrically connected to the fourth repairing line 244. In particular, the fourth conductive patterns 244a, 244b overlap the two ends of the fourth repairing line 244, respectively.

When the scan line 220 and the data line 230 exhibit electrical failure (for example, short circuit or broken line), the repair structure 240 can be repaired so that the signals of the scan line 220 and the data line 230 can be normally transmitted.

FIG. 3 is a top plan view of the repair structure of FIG. 2 after repairing. Referring to FIG. 3, when the scan line 220 and the data line 230 are electrically failed at the interlace 330, the interlace 330 (hereinafter referred to as the electrical failure 330) and the scan line 220 and the data line 230 are cut. The electrical failure 330 is electrically insulated from the scan line 220 and the data line 230, wherein the scan line 220 and the data line 230 can be cut by laser cutting. In other words, laser cutting can be performed at the cut locations 321-324 to electrically insulate the electrical failure 330 from the scan line 220 and the data line 230.

Next, laser cutting is performed at the cut portions 325 and 327 to electrically insulate the first repair line 241 and the third repair line 243 from the scan line 220. Laser cutting is performed at the cut locations 326 and 328 to electrically insulate the second repair line 242 and the fourth repair line 244 from the data line 230. At this time, the first repairing line 241, the second repairing line 242, the third repairing line 243, and the fourth repairing line 244 are independent lines, and are electrically insulated from the scanning line 220 and the data line 230.

In particular, the fusion splices 311 to 318 can be welded by means of laser welding, that is, after the welding is completed, the two ends of the first repairing wire 241 are respectively jumpered and connected to the first conductive patterns 241a and 241b; The two ends of the line 242 are respectively connected to the second conductive patterns 242a and 242b by hopping layers; the two ends of the third repair line 243 are respectively layered and connected to the third conductive patterns 243a and 243b; The layers connect the fourth conductive patterns 244a and 244b.

Referring to FIG. 3, in the data line 230, the first repairing line 241 and the first conductive patterns 241a and 241b constitute a first conductive path 341; the third repairing line 243 and the third conductive patterns 243a and 243b constitute a third conductive line. Path 343. Therefore, the signal on the data line 230 can be transmitted through the first conductive path 341 or the third conductive path 343 without being affected by the electrical failure 330.

In the scan line 220, the second repair line 242 and the second conductive patterns 242a and 242b constitute the second conductive path 342; the fourth repair line 244 and the fourth conductive patterns 244a and 244b constitute the fourth conductive path 344. Therefore, the signal on the scan line 220 can be transmitted through the second conductive path 342 or the fourth conductive path 344 without being affected by the electrical failure 330. In the above, after the repair by the repair structure 240, the signals of the scan line 220 and the data line 230 can still be transmitted normally.

Further, laser light may be irradiated from the front or back surface of the active device array substrate 200 to perform laser welding at the fusion splice points 311 to 318. Hereinafter, the welding point 313 will be described as an example, and the description of the other welding points 311, 312, and 314 to 318 will be omitted. 4A is a schematic cross-sectional view of the fusion splice point 313 of FIG. 3 taken along line A-A', wherein the laser light L is irradiated from the front surface of the active device array substrate 200. Referring to FIG. 4A, an insulating layer 410 is disposed between the second repairing line 242 and the second conductive pattern 242a. The laser light L may be irradiated from the front surface of the active device array substrate 200, that is, the second repairing line 242 is irradiated with the laser light L, and the portion of the second repairing line 242 is melted by the laser light L and the insulating layer 410 is perforated. H. The portion where the second repair line 242 is melted is welded to the second conductive pattern 242a through the through hole H. As a result, the second repair line 242 is recessed downward and electrically connected to the second conductive pattern 242a.

4B is a schematic cross-sectional view of the fusion splice point 313 of FIG. 3 taken along line A-A', wherein the laser light L is irradiated from the back surface of the active device array substrate 200. Referring to FIG. 4B, the second conductive pattern 242a may be irradiated with the laser light L, and the portion of the second conductive pattern 242a is melted by the laser light L and the insulating layer 410 is formed with the through hole H. The portion where the second conductive pattern 242a is melted is welded to the second repairing line 242 through the through hole H. As a result, the second conductive pattern 242a is recessed upward and electrically connected to the second repair line 242.

In particular, since the materials of the second conductive pattern 242a and the second repairing line 242 are both metal, when the laser is melted, the ability to withstand the laser light L is the same, and a good repairing effect can be achieved.

In addition, the repair structure 240 may include first to fourth conductive paths 341 344 344, that is, the repair structure 240 may respectively form two conductive paths corresponding to the scan line 220 and the data line 230 (four conductive paths in total). . However, due to cost or circuit design considerations, only one conductive path may be formed for each of the scan lines 220 and the data lines 230, and may also be repaired when an electrical failure occurs at the intersection of the scan lines 220 and the data lines 230. The embodiments of the four repair structures 500-800 will be further described below, and the first conductive path and the second conductive path will be described as an example. The same components are denoted by the same reference numerals, and the related contents are omitted.

FIG. 5 is a top plan view of another repair structure 500 in accordance with a preferred embodiment of the present invention. Referring to FIG. 5 , the repair structure 500 includes a first repair line 241 , a second repair line 242 , first conductive patterns 241 a and 241 b , and second conductive patterns 242 a and 242 b . For the configuration, refer to the related description of FIG. 3 .

When the scan line 220 and the data line 230 exhibit electrical failure at the staggered portion 330, laser cutting is performed on the cut portions 321 to 326, and the fusion splice points 311, 313, 314, and 316 are laser welded to form a first A conductive path 341 and a second conductive path 342. Thereby, the data line 230 can transmit signals through the first conductive path 341, and the scan line 220 can transmit signals through the second conductive path 342 while avoiding the electrical failure 330. In particular, the first conductive path 341 is parallel to the data line 230 and is located on the right side of the data line 230. The second conductive path 342 is parallel to the scan line 220 and is located on the lower side of the scan line 220.

As the positions of the first conductive path 341 and the second conductive path 342 are different, there are the following three cases. FIG. 6 is a top plan view of still another repair structure 600 in accordance with a preferred embodiment of the present invention. Referring to FIG. 6 , the repair structure 600 includes a first repair line 241 , a fourth repair line 244 , first conductive patterns 241 a and 241 b , and fourth conductive patterns 244 a and 244 b .

When the scan line 220 and the data line 230 exhibit electrical failure at the staggered portion 330, laser cutting is performed on the cut portions 321 to 325, 328, and the fusion splice points 311, 312, 314, and 317 are laser welded to form a laser line. The first conductive path 341 and the fourth conductive path 344. Thereby, the data line 230 can transmit signals through the first conductive path 341, and the scan line 220 can transmit signals through the fourth conductive path 344 while avoiding the electrical failure 330. In particular, in the embodiment of FIG. 6, the first conductive path 341 is parallel to the data line 230 and is located on the right side of the data line 230, and the fourth conductive path 344 (equivalent to the second conductive path 342) and the scan line. 220 is parallel and located on the upper side of the scanning line 220.

FIG. 7 is a top plan view of still another repair structure 700 in accordance with a preferred embodiment of the present invention. Referring to FIG. 7 , the repair structure 700 includes a second repair line 242 , a third repair line 243 , a second conductive pattern 242 a , 242 b , and a third conductive pattern 243 a , 243 b , which may be referred to the related description of FIG. 3 .

When the scan line 220 and the data line 230 exhibit electrical failure at the staggered portion 330, laser cutting is performed on the cut portions 321 to 324, 326, and 327, and the fusion splice points 313, 315, 316, and 318 are laser welded to This forms the second conductive path 342 and the third conductive path 343. Thereby, the data line 230 can transmit signals through the third conductive path 343, and the scan line 220 can transmit signals through the second conductive path 342 while avoiding the electrical failure 330. In particular, in the embodiment of FIG. 7, the third conductive path 343 (equivalent to the first conductive path 341) is parallel to the data line 230 and is located on the left side of the data line 230, and the second conductive path 342 and the scan line 220 is parallel and located on the lower side of the scanning line 220.

FIG. 8 is a top plan view of still another repair structure 800 in accordance with a preferred embodiment of the present invention. Referring to FIG. 8 , the repair structure 800 includes a third repair line 243 , a fourth repair line 244 , a third conductive pattern 243 a , 243 b , and a fourth conductive pattern 244 a , 244 b , which may be referred to the related description of FIG. 3 .

When the scan line 220 and the data line 230 are electrically failed at the staggered portion 330, the cut portions 321 - 324, 327, 328 are laser cut, and the fusion splice points 312, 315, 317, 318 are laser welded to This forms a third conductive path 343 and a fourth conductive path 344. Thereby, the data line 230 can transmit a signal through the third conductive path 343, and the scan line 220 can transmit a signal through the fourth conductive path 344 while avoiding the electrical failure 330. In particular, in the embodiment of FIG. 8, the third conductive path 343 (equivalent to the first conductive path 341) is parallel to the data line 230 and is located on the left side of the data line 230, and the fourth conductive path 344 (equivalent The second conductive path 342) is parallel to the scan line 220 and is located above the scan line 220.

FIG. 9 is a top plan view of the repair structure 700 of FIG. 7 with the active device TFT. That is to say, the repair structure of FIG. 7 is particularly suitable for the case where the active element TFT is also provided. Referring to FIG. 7 and FIG. 9 simultaneously, in general, the active device array substrate 200 is provided with an active device TFT. The active device TFT may be a thin film transistor. The gate G of the active device TFT is electrically connected to the scan line 220, the source S is electrically connected to the data line 230, and the drain D is electrically connected to the pixel electrode PE.

As can be seen from FIG. 9, when the repair structure 700 is employed, it is quite suitable to reposition the active device TFT. When the scan line 220 and the data line 230 exhibit electrical failure at the staggered portion 330, the repair of the electrical failure 330 can be performed through the repair structure 700 so that the signals of the scan line 220 and the data line 230 can be normally transmitted.

It should be noted that the above-mentioned repair structures 240, 500-800 are used to repair the electrical failure of the active device array substrate 200 in the staggered position of the scan line 220 and the data line 230 in the display area, but in practical use. The repair structures 240, 500-800 can also be used to repair the intersection of the lines of the active device array substrate 200 in the peripheral line region, so that the signals of the peripheral lines can be normally transmitted. In addition, the repair structures 240 and 500 to 800 described above are not limited to the repair use in the active device array substrate 200. The above-mentioned repair structures 240, 500-800 can be applied to the staggered positions on any kind of substrate to achieve a good repair effect.

In summary, the repair structure of the present invention and the active device array substrate having the repair structure have at least the following advantages:

The repair structure of the present invention is quite suitable for repairing electrical failures (open or short) of scan lines or data lines. In particular, when the scan line and the data line exhibit electrical failure at the intersection, the scan line and the data line and the corresponding repair line can be jumpered to achieve the technical effect of repair. In addition, the scan lines and the data lines may extend a plurality of conductive patterns to overlap the two ends of the corresponding repair lines. Since the conductive pattern and the repairing line are made of the same material (all metal) and have the same ability to withstand laser light, a good electrical connection effect can be achieved when laser welding is performed.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

110, 130, 230. . . Data line

110a, 110b. . . Branch wiring

120, 220. . . Scanning line

140A, 140B, 140C. . . Line segment

150, 240, 500 ~ 800. . . Repair structure

151, 152, 241a ~ 244b. . . Conductive pattern

153. . . Transparent electrode

154, 155. . . Junction

200. . . Active device array substrate

210. . . Substrate

241~244. . . Repair line

311~318. . . Fusion point

321 ~ 328. . . Cutting place

330. . . Electrical failure

341~344. . . Conductive path

410. . . Insulation

A. . . region

D. . . Bungee

G. . . Gate

H. . . perforation

L. . . laser

S. . . Source

PE. . . Pixel electrode

TFT. . . Active component

Fig. 1A is a schematic view showing the repair structure of the Republic of China Patent Publication No. 583767.

Figure 1B is a schematic view of the repair structure of the Republic of China Patent Publication No. I282625.

2 is a top plan view of an active device array substrate 200 in accordance with a preferred embodiment of the present invention.

FIG. 3 is a top plan view of the repair structure 240 of FIG. 2 after repairing.

4A is a schematic cross-sectional view of the fusion splice point 313 of FIG. 3 taken along line A-A', wherein the laser light L is irradiated from the front surface of the active device array substrate 200.

4B is a schematic cross-sectional view of the fusion splice point 313 of FIG. 3 taken along line A-A', wherein the laser light L is irradiated from the back surface of the active device array substrate 200.

FIG. 5 is a top plan view of another repair structure 500 in accordance with a preferred embodiment of the present invention.

FIG. 6 is a top plan view of still another repair structure 600 in accordance with a preferred embodiment of the present invention.

FIG. 7 is a top plan view of still another repair structure 700 in accordance with a preferred embodiment of the present invention.

FIG. 8 is a top plan view of still another repair structure 800 in accordance with a preferred embodiment of the present invention.

FIG. 9 is a top plan view of the repair structure 700 of FIG. 7 with the active device TFT.

220. . . Scanning line

230. . . Data line

240. . . Repair structure

241~244. . . Repair line

241a～244b. . . Conductive pattern

311~318. . . Fusion point

321 ~ 328. . . Cutting place

330. . . Electrical failure

341~344. . . Conductive path

Claims (16)

A repairing structure for repairing an electrical failure of a scan line or a data line, the scan line and the data line are staggered with each other and electrically insulated from each other, and the repair structure is interleaved around the scan line and the data line The repairing structure includes: a first repairing line perpendicular to the scanning line, the first repairing line and the scanning line being the same film layer; and a second repairing line perpendicular to the data line, the second repairing The line and the data line are the same film layer; wherein, when the electrical failure point on the data line is repaired, the first repair line and the scan line are electrically insulated from each other, and the first repair line and the data are made The first conductive path further includes two first conductive patterns extending from the data line, and the first conductive patterns are respectively disposed on the first repairing line. Both ends are electrically connected to the first repairing line; when the electrical failure point on the scanning line is repaired, the second repairing line and the data line are electrically insulated from each other, and the second repairing line is The scan line is layered And forming a second conductive path, the second conductive path further includes two second conductive patterns extending from the scan line, the second conductive patterns are respectively disposed at two ends of the second repair line, and Electrically connected to the second repair line. The repairing structure of claim 1, wherein the first conductive path is parallel to the data line and is located on a right side of the data line, and the second conductive path is parallel to the scan line and located at the same Scan line Lower side. The repairing structure of claim 1, wherein the first conductive path is parallel to the data line and is located on a right side of the data line, and the second conductive path is parallel to the scan line and located at the same The upper side of the scan line. The repairing structure of claim 1, wherein the first conductive path is parallel to the data line and is located on a left side of the data line, and the second conductive path is parallel to the scan line and located at the same The lower side of the scan line. The repairing structure of claim 1, wherein the first conductive path is parallel to the data line and is located on a left side of the data line, and the second conductive path is parallel to the scan line and located at the same The upper side of the scan line. The repairing structure of claim 1, further comprising: a third repairing line perpendicular to the scanning line, the third repairing line and the scanning line being the same film layer; and a fourth repairing line, vertical In the data line, the fourth repairing line and the data line are the same film layer; wherein, when the electrical failure point on the data line is repaired, the third repairing line and the scanning line are electrically insulated from each other, and The third repairing line is connected to the data line to form a third conductive path; when the electrical failure point on the scan line is repaired, the fourth repairing line and the data line are electrically insulated from each other. And the fourth repairing line is connected to the scan line by a layer jumper to form a fourth conductive path. The repairing structure of claim 6, wherein the third conductive path further comprises: two third conductive patterns extending from the data line; the third conductive patterns are respectively disposed in the third Both ends of the wire are repaired and electrically connected to the third repairing wire. The repairing structure of claim 6, wherein the fourth conductive path further comprises: two fourth conductive patterns extending from the scan line; the fourth conductive patterns are respectively disposed at the fourth Both ends of the wire are repaired and electrically connected to the fourth repairing line. An active device array substrate includes: a scan line and a data line, the scan line and the data line are staggered and electrically insulated from each other; and a repair structure for repairing an electrical failure of the scan line or the data line Wherein the repair structure surrounds the intersection of the scan line and the data line, the repair structure includes: a first repair line perpendicular to the scan line, the first repair line and the scan line being the same film layer; a second repairing line perpendicular to the data line, the second repairing line and the data line being the same film layer; wherein, when repairing the electrical failure point on the data line, the first repairing line and the scanning are performed The wires are electrically insulated from each other, and the first repairing line is connected to the data line to form a first conductive path. The first conductive path further includes two first conductive patterns extending from the data line. The first conductive patterns are respectively disposed at two ends of the first repairing line and electrically connected to the first repairing line; when the electrical failure point on the scanning line is repaired, the second repairing line is made The second information line is electrically insulated from the data line, and the second repair line is connected to the scan line to form a second conductive path, and the second conductive path further includes two first lines extending from the scan line. a second conductive pattern respectively disposed at two ends of the second repairing line and electrically connected to the second repairing line; and an active component electrically connected to the corresponding scan line and the data line. The active device array substrate according to claim 9, wherein the first conductive path is parallel to the data line and is located on a right side of the data line, and the second conductive path is parallel to the scan line, and Located on the lower side of the scan line. The active device array substrate according to claim 9, wherein the first conductive path is parallel to the data line and is located on a right side of the data line, and the second conductive path is parallel to the scan line, and Located on the upper side of the scan line. The active device array substrate according to claim 9, wherein the first conductive path is parallel to the data line and is located on a left side of the data line, and the second conductive path is parallel to the scan line, and Located on the lower side of the scan line. The active device array substrate according to claim 9, wherein the first conductive path is parallel to the data line and is located in the capital On the left side of the feed line, the second conductive path is parallel to the scan line and is located above the scan line. The active device array substrate according to claim 9, wherein the repairing structure further comprises: a third repairing line perpendicular to the scanning line, wherein the third repairing line and the scanning line are the same film layer; a fourth repairing line, perpendicular to the data line, the fourth repairing line and the data line being the same film layer; wherein, when repairing the electrical failure point on the data line, the third repairing line and the scanning are performed The wires are electrically insulated from each other, and the third repairing line is connected to the data line to form a third conductive path; when the electrical failure point on the scan line is repaired, the fourth repairing line is The data lines are electrically insulated from each other, and the fourth repair line is jumpered to the scan line to form a fourth conductive path. The active device array substrate of claim 14, wherein the third conductive path further comprises: two third conductive patterns extending from the data line; the third conductive patterns are respectively disposed on the Both ends of the third repairing line are electrically connected to the third repairing line. The active device array substrate of claim 14, wherein the fourth conductive path further comprises: two fourth conductive patterns extending from the scan line; the fourth conductive patterns are respectively disposed on the Both ends of the fourth repairing line are electrically connected to the fourth repairing line.