TWI487811B - Etching solution capable of effectively reducing galvanic effect - Google Patents
Etching solution capable of effectively reducing galvanic effect Download PDFInfo
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- TWI487811B TWI487811B TW102143242A TW102143242A TWI487811B TW I487811 B TWI487811 B TW I487811B TW 102143242 A TW102143242 A TW 102143242A TW 102143242 A TW102143242 A TW 102143242A TW I487811 B TWI487811 B TW I487811B
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- chemical formula
- nitrogen
- heterocyclic compound
- membered heterocyclic
- hydrogen
- Prior art date
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- 238000005530 etching Methods 0.000 title claims description 38
- 230000000694 effects Effects 0.000 title claims description 29
- 239000000126 substance Substances 0.000 claims description 112
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 74
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 65
- 125000000962 organic group Chemical group 0.000 claims description 62
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 58
- 239000010949 copper Substances 0.000 claims description 55
- 229910052802 copper Inorganic materials 0.000 claims description 51
- 239000001257 hydrogen Substances 0.000 claims description 47
- 229910052739 hydrogen Inorganic materials 0.000 claims description 47
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 42
- 150000002500 ions Chemical class 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 32
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 32
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 26
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 239000010931 gold Substances 0.000 claims description 23
- 150000001336 alkenes Chemical class 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 21
- 239000002904 solvent Substances 0.000 claims description 19
- 239000002253 acid Substances 0.000 claims description 18
- 150000001345 alkine derivatives Chemical class 0.000 claims description 18
- 235000010233 benzoic acid Nutrition 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 239000005711 Benzoic acid Substances 0.000 claims description 16
- 238000001039 wet etching Methods 0.000 claims description 16
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 15
- 150000002431 hydrogen Chemical class 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 9
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- -1 bromine Ions Chemical class 0.000 claims description 9
- QAOWNCQODCNURD-UHFFFAOYSA-M hydrogensulfate Chemical compound OS([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-M 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 150000007513 acids Chemical class 0.000 claims description 8
- 150000001298 alcohols Chemical class 0.000 claims description 8
- 150000002170 ethers Chemical class 0.000 claims description 8
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 7
- 229940006460 bromide ion Drugs 0.000 claims description 7
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229940006461 iodide ion Drugs 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims description 3
- GJCXHYNLSNVSQZ-UHFFFAOYSA-L [Cu](Cl)Cl.Cl Chemical compound [Cu](Cl)Cl.Cl GJCXHYNLSNVSQZ-UHFFFAOYSA-L 0.000 claims description 3
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- JLLMDXDAVKMMEG-UHFFFAOYSA-N hydrogen peroxide phosphoric acid Chemical compound OO.OP(O)(O)=O JLLMDXDAVKMMEG-UHFFFAOYSA-N 0.000 claims description 3
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 3
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 2
- 229910052794 bromium Inorganic materials 0.000 claims 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 238000005502 peroxidation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 claims 1
- 238000002474 experimental method Methods 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 150000001555 benzenes Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- FCERNNLMTCOKHX-UHFFFAOYSA-N 1,5-diphenyltetrazole Chemical compound C1=CC=CC=C1C1=NN=NN1C1=CC=CC=C1 FCERNNLMTCOKHX-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 150000001559 benzoic acids Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- PWMWNFMRSKOCEY-UHFFFAOYSA-N 1-Phenyl-1,2-ethanediol Chemical compound OCC(O)C1=CC=CC=C1 PWMWNFMRSKOCEY-UHFFFAOYSA-N 0.000 description 1
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N hydrochloric acid Substances Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Description
本發明係關於一種蝕刻液,尤指含有含氮五元雜環化合物之一種可有效減緩賈凡尼效應之蝕刻液。The present invention relates to an etching solution, and more particularly to an etching solution containing a nitrogen-containing five-membered heterocyclic compound which can effectively alleviate the Giovanni effect.
於印刷電路板或者積體電路的後段製程中,為了於印刷電路板或者矽晶圓上製作出具有特定圖案(pattern)的金屬層(即,導線或焊接墊),通常係透過微影蝕刻技術配合特定的蝕刻液予以完成,例如:氯化鐵系蝕刻液、氯化銅系蝕刻液、鹼性蝕刻液等。但是,在這些蝕刻液中,存在被稱為底切(undercut)之的問題。In the back-end process of a printed circuit board or an integrated circuit, in order to produce a metal layer (ie, a wire or a solder pad) having a specific pattern on a printed circuit board or a germanium wafer, it is usually transmitted through a lithography technique. This is done in combination with a specific etching solution, such as a ferric chloride-based etching solution, a copper chloride-based etching solution, an alkaline etching solution, or the like. However, among these etching liquids, there is a problem called undercut.
請參閱第一圖與第二圖,係於印刷電路板上製作具有特定圖案的銅層之製程示意圖。在一般的印刷電路板之銅導線製程中,如第一圖所示,係先於基板10’上的銅層11’之上形成具有特定圖案的阻蝕層(etch-resisting layer)12’;接著,再透過濕蝕刻的方式去除未被阻蝕層12’覆蓋的銅層11’;最後,於去除阻蝕層(etch-resisting layer)12’後,例如銅導線或者銅焊墊之具有特定圖案的銅層11’便形成於該基板10’之上。然而,隨著新世代的產品 對於印刷電路板導線之線寬之要求,如第二圖所示,在製作極細微的銅導線時,被阻蝕層12’覆蓋的銅層11’也開始產生側蝕(lateral etching)現象,而這種現象便稱之為底切(undercut)。Please refer to the first and second figures, which are schematic diagrams of the process of fabricating a copper layer with a specific pattern on a printed circuit board. In a general printed circuit board copper wire process, as shown in the first figure, an etch-resisting layer 12' having a specific pattern is formed on the copper layer 11' on the substrate 10'; Then, the copper layer 11' not covered by the resist layer 12' is removed by wet etching; finally, after removing the etch-resisting layer 12', for example, the copper wire or the copper pad has a specific A patterned copper layer 11' is formed over the substrate 10'. However, with the new generation of products For the requirement of the line width of the printed circuit board wires, as shown in the second figure, when the ultrafine copper wires are fabricated, the copper layer 11' covered by the resist layer 12' also begins to produce lateral etching. This phenomenon is called undercut.
此外,由於智慧型手機、平板電腦等消費型電子產品的高度普及,傳統使用銅導線作為訊號傳輸之印刷電路板已無法負荷該些消費型電子產品之高頻、高速應用;因此,銅/金混合印刷電路板遂被提出並加以應用於上述等消費型電子產品之中。請參閱第三圖,係銅/金混合印刷電路板的上視圖。如第三圖所示,基板10”製作有一銅導線11”與一金導線12”,其中,由於金導線12”的還原電位係低於銅導線11”,因此,當藉由濕蝕刻的方式於基板10”製作有銅導線11”與金導線12”之時,連接於金導線12”的銅導線11”便會產生過度蝕刻的現象產生。In addition, due to the high popularity of consumer electronic products such as smart phones and tablet PCs, traditional printed circuit boards using copper wires as signal transmissions have been unable to load the high-frequency, high-speed applications of these consumer electronic products; therefore, copper/gold Hybrid printed circuit boards have been proposed and applied to such consumer electronic products as described above. Please refer to the third figure for a top view of a copper/gold hybrid printed circuit board. As shown in the third figure, the substrate 10" is formed with a copper wire 11" and a gold wire 12", wherein the reduction potential of the gold wire 12" is lower than that of the copper wire 11", and thus, by wet etching When the copper wire 11" and the gold wire 12" are formed on the substrate 10", the copper wire 11" connected to the gold wire 12" is excessively etched.
因此,綜合上述對於習用的銅/金混合印刷電路板之銅導線過度蝕刻之解決方案的說明,可以得知目前所習用的解決方案係仍具有許多缺點與不足;有鑑於此,本案之發明人係極力加以研究發明,而終於研發完成本發明之一種可有效減緩賈凡尼效應之蝕刻液。Therefore, in combination with the above description of the solution for over-etching copper wires of conventional copper/gold hybrid printed circuit boards, it can be known that the solutions currently in use still have many shortcomings and deficiencies; in view of this, the inventor of the present invention The invention was vigorously studied, and finally an etchant which can effectively slow down the Giovanni effect of the present invention was developed.
本發明之主要目的,在於提供一種可有效減緩賈 凡尼效應之蝕刻液,其主要係藉由將特定比例的一蝕刻劑與一含氮五元雜環化合物溶於水而製成的蝕刻液;如此,當使用者應用此蝕刻液對包含至少一第一金屬(例如金)與至少一第二金屬(例如銅)之一基板進行濕式蝕刻時,該含氮五元雜環化合物會於具有較高還原電位之第一金屬(即,金)上形成一有機護膜,進而有效避免第二金屬因受到賈凡尼效應(galvanic effect)之影響而導致過度蝕刻的現象。The main purpose of the present invention is to provide an effective slowing down of Jia An etchant for a Fanny effect, which is mainly prepared by dissolving a specific ratio of an etchant and a nitrogen-containing five-membered heterocyclic compound in water; thus, when the user applies the etchant pair to at least When a first metal (such as gold) and a substrate of at least one second metal (such as copper) are wet etched, the nitrogen-containing five-membered heterocyclic compound will be in a first metal having a higher reduction potential (ie, gold) An organic protective film is formed thereon, thereby effectively preventing the second metal from being excessively etched due to the influence of the galvanic effect.
因此,為了達成本發明上述之目的,本案之發明人提出一種可有效減緩賈凡尼效應之蝕刻液,係應用於對至少包含一第一金屬與一第二金屬的一基板進行一濕式蝕刻製程,該蝕刻液係包括:一溶劑;一蝕刻劑,係溶於該溶劑之中,以形成一蝕刻液;以及一含氮五元雜環化合物,係溶於該蝕刻劑之中以作為該濕式蝕刻製程之中的一有機護膜,其中該蝕刻劑於該溶劑之中的含量係介於5g/L至250g/L之間,且該含氮五元雜環化合物於該溶劑之中的含量係介於0.01g/L至50g/L之間。Therefore, in order to achieve the above object of the present invention, the inventors of the present invention have proposed an etching solution capable of effectively alleviating the Giovanni effect, which is applied to wet etching a substrate including at least a first metal and a second metal. The etching solution includes: a solvent; an etchant dissolved in the solvent to form an etchant; and a nitrogen-containing five-membered heterocyclic compound dissolved in the etchant to serve as the etchant An organic film in the wet etching process, wherein the etchant is contained in the solvent in a range of from 5 g/L to 250 g/L, and the nitrogen-containing five-membered heterocyclic compound is in the solvent The content is between 0.01 g/L and 50 g/L.
於上述的蝕刻液中,該含氮五元雜環化合物可以是如下列化學式1或化學式2所示的化學結構,其中,R1為一第一基團,且該第一基團係選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、苯酸或氫。In the above etching solution, the nitrogen-containing five-membered heterocyclic compound may be a chemical structure as shown in the following Chemical Formula 1 or Chemical Formula 2, wherein R1 is a first group, and the first group is selected from Any of the following groups: ether, alcohol, acid, alkane, alkene, alkyne, benzene, phenol, benzoic acid or hydrogen.
並且,更可增加一個或者兩個第二有機基團或是氫至化學式2之中,使得該含氮五元雜環化合物成為正離子,並藉由令該含氮五元雜環化合物帶有至少一負離子,而使其化學式達到電荷平衡;其中,增加有一個第二有機基團或是氫的該含氮五元雜環化合物係如下列化學式3或者化學式4所表示;並且,增加有兩個第二有機基團或是氫的該含氮五元雜環化合物係如下列化學式5所表示:
其中,R2為該第二有機基團或是氫,且該第二有機基團係任意選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;且該負離子係選自 下列群組之中的任一者:氟離子(F- )、氯離子(Cl- )、溴離子(Br- )、碘離子(I- )、四氟化硼離子(BF4 - )、硫酸根離子(SO4 2- )、與硫酸氫根離子(HSO4 - )。Wherein R 2 is the second organic group or hydrogen, and the second organic group is optionally selected from any one of the group consisting of ethers, alcohols, acids, alkanes, alkenes, alkynes, benzene, Phenol, and benzoic acid; and the negative ion is selected from any one of the group consisting of fluoride ion (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ), Boron tetrafluoride ion (BF 4 - ), sulfate ion (SO 4 2- ), and hydrogen sulfate ion (HSO 4 - ).
此外,於該可有效減緩賈凡尼效應之蝕刻液之中,該含氮五元雜環化合物之化學結構係如下列化學式6或化學式7所示,其中,R1為一第一有機基團或是氫,且該第一有機基團係選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸。Further, in the etching liquid which can effectively alleviate the Giovanni effect, the chemical structure of the nitrogen-containing five-membered heterocyclic compound is as shown in the following Chemical Formula 6 or Chemical Formula 7, wherein R1 is a first organic group or Is hydrogen, and the first organic group is selected from any of the group consisting of ethers, alcohols, acids, alkanes, alkenes, alkynes, benzenes, phenols, and benzoic acids.
並且,更可增加一個或者兩個第二有機基團或是氫至化學式7之中,使得該含氮五元雜環化合物成為正離子,並藉由令該含氮五元雜環化合物帶有至少一負離子,而使其化學式達到電荷平衡;其中,增加有一個第二有機基團或是氫的該含氮五元雜環化合物係如下列化學式8或者化學式9所表示,並且,增加有兩個第二有機基團或是氫的該含氮五元雜環化合物係如下列化學式10所表示:[化學式8] [化學式9]
其中,R2為該第二有機基團或是氫,且該有機基團係任意選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;且該負離子係選自下列群組之中的任一者:氟離子(F- )、氯離子(Cl- )、溴離子(Br- )、碘離子(I- )、四氟化硼離子(BF4 - )、硫酸根離子(SO4 2- )、與硫酸氫根離子(HSO4 - )。Wherein R 2 is the second organic group or hydrogen, and the organic group is arbitrarily selected from any one of the group consisting of ethers, alcohols, acids, alkanes, alkenes, alkynes, benzenes, phenols, And benzoic acid; and the negative ion is selected from any one of the group consisting of fluoride ion (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ), tetrafluoro Boron ion (BF 4 - ), sulfate ion (SO 4 2- ), and hydrogen sulfate ion (HSO 4 - ).
再者,於該可有效減緩賈凡尼效應之蝕刻液之中,該含氮五元雜環化合物之化學結構係如下列化學式11所示,其中,R1為一第一有機基團或是氫,且該第一有機基團係選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;並且,化學式11所表示之該含氮五元雜環化合物為一個1,5-R1-四氮唑。Further, in the etching liquid capable of effectively alleviating the Giovanni effect, the chemical structure of the nitrogen-containing five-membered heterocyclic compound is as shown in the following Chemical Formula 11, wherein R1 is a first organic group or hydrogen And the first organic group is selected from any one of the group consisting of an ether, an alcohol, an acid, an alkane, an alkene, an alkyne, a benzene, a phenol, and a benzoic acid; and the chemical formula 11 The nitrogen-containing five-membered heterocyclic compound is a 1,5-R1-tetrazole.
[化學式11]
並且,更可增加一個、兩個或三個第二有機基團或是氫至化學式11之中,使得該含氮五元雜環化合物成為正離子,並藉由令該含氮五元雜環化合物帶有至少一負離子,而使其化學式達到電荷平衡;其中,增加有一個有機基團或是氫的該含氮五元雜環化合物係如下列化學式12、化學式13或者化學式14所表示;並且,增加有兩個有機基團或是氫的該含氮五元雜環化合物係如下列化學式15、化學式16或者化學式17所表示;再者,增加有三個有機基團或是氫的該含氮五元雜環化合物係如下列化學式18所表示:
其中,R2為一第二有機基團或是氫,且該第二有機基團係選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;並且,該負離子基團係下列群組之中的任一者:氟離子(F- )、氯離子(Cl- )、溴離子(Br- )、碘離子(I- )、四氟化硼離子(BF4 - )、硫酸根離子(SO4 2- )、與硫酸氫根離子(HSO4 - )。Wherein R 2 is a second organic group or hydrogen, and the second organic group is selected from any one of the group consisting of ethers, alcohols, acids, alkanes, alkenes, alkynes, benzenes, phenols And benzoic acid; and the negative ion group is any one of the following groups: fluoride ion (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ), Boron tetrafluoride ion (BF 4 - ), sulfate ion (SO 4 2- ), and hydrogen sulfate ion (HSO 4 - ).
10‧‧‧基板10‧‧‧Substrate
11‧‧‧金層11‧‧‧ gold layer
12‧‧‧銅層12‧‧‧ copper layer
10’‧‧‧基板10'‧‧‧Substrate
11’‧‧‧銅層11’‧‧‧ copper layer
12’‧‧‧阻蝕層12'‧‧‧Corrosion layer
10”‧‧‧基板10"‧‧‧Substrate
11”‧‧‧銅導線11”‧‧‧ copper wire
12”‧‧‧金導線12"‧‧‧ Gold wire
第一圖與第二圖係於印刷電路板上製作具有特定圖案的銅層之製程示意圖;第三圖係銅/金混合印刷電路板的上視圖;第四圖係具有一銅層與一金層之一基板的上視圖; 第五圖係銅層的立體示意圖;第六圖係實驗一之銅層的顯微影像圖;以及第七圖係實驗二之銅層的顯微影像圖。The first and second figures are schematic diagrams of a process for fabricating a copper layer having a specific pattern on a printed circuit board; the third drawing is a top view of a copper/gold hybrid printed circuit board; and the fourth figure has a copper layer and a gold layer. Upper view of one of the layers of the substrate; The fifth figure is a three-dimensional diagram of the copper layer; the sixth picture is a microscopic image of the copper layer of the experiment one; and the seventh picture is a microscopic image of the copper layer of the experiment two.
為了能夠更清楚地描述本發明所提出之一種可有效減緩賈凡尼效應之蝕刻液,以下將配合圖式,詳盡說明本發明之較佳實施例。In order to more clearly describe an etching solution of the present invention which can effectively alleviate the Giovanni effect, a preferred embodiment of the present invention will be described in detail below with reference to the drawings.
本發明之可有效減緩賈凡尼效應之蝕刻液係應用於對包含至少一第一金屬與至少一第二金屬之一基板進行一濕式蝕刻製程;其中,由於第一金屬之還原電位(Reduction Potential)係大於該第二金屬之還原電位,因此,該第一金屬可以是金(Au)、鉑(Pt)、銀(Ag)、銅(Cu)、錫(Sn)、鎳(Ni)、與鋁(Al);而對應地,該第二金屬可以是鋁(Al)、鎳(Ni)、錫(Sn)、銅(Cu)、銀(Ag)、鉑(Pt)、鈦(Ti)、鐵(Fe)、鈷(Co)與鉻(Cr);至於基板則為常見的印刷電路板、矽晶圓、玻璃基板、砷化鎵與氧化鋁。The etchant system of the present invention effective for slowing down the Jaffany effect is applied to a wet etching process for a substrate comprising at least a first metal and at least a second metal; wherein, due to a reduction potential of the first metal (Reduction) The potential is greater than the reduction potential of the second metal. Therefore, the first metal may be gold (Au), platinum (Pt), silver (Ag), copper (Cu), tin (Sn), nickel (Ni), And aluminum (Al); and correspondingly, the second metal may be aluminum (Al), nickel (Ni), tin (Sn), copper (Cu), silver (Ag), platinum (Pt), titanium (Ti) Iron (Fe), cobalt (Co) and chromium (Cr); as for the substrate, it is a common printed circuit board, germanium wafer, glass substrate, gallium arsenide and aluminum oxide.
繼續地說明本發明之可有效減緩賈凡尼效應之蝕刻液,其主要係包括:一溶劑、一蝕刻劑以及一含氮五元雜環化合物;其中,該溶劑為水,且該蝕刻劑,係溶於該溶劑之中,以形成一蝕刻液。於本發明中,並不特別限制蝕刻劑之形式,因此該蝕刻劑可以是過氧化氫-硫酸 (H2 O2 -H2 SO4 )、過氧化氫-磷酸(H2 O2 -H3 PO4 )、氯化銅-鹽酸(CuCl2 -HCl)、氯化鐵-鹽酸(FeCl2 -HCl)、鹽酸-硝酸(HCl-HNO3 )、過硫酸鈉(Na2 S2 O8 )、或者過硫酸鹽複合物(如KHSO5 ˙KHSO4 ˙K2 SO4 )。Continuing to explain the etching solution of the present invention which can effectively alleviate the Giovanni effect, the method mainly comprises: a solvent, an etchant and a nitrogen-containing five-membered heterocyclic compound; wherein the solvent is water, and the etchant, It is dissolved in the solvent to form an etchant. In the present invention, the form of the etchant is not particularly limited, and thus the etchant may be hydrogen peroxide-sulfuric acid (H 2 O 2 -H 2 SO 4 ), hydrogen peroxide-phosphoric acid (H 2 O 2 -H 3 PO 4 ), copper chloride-hydrochloric acid (CuCl 2 -HCl), ferric chloride-hydrochloric acid (FeCl 2 -HCl), hydrochloric acid-nitric acid (HCl-HNO 3 ), sodium persulfate (Na 2 S 2 O 8 ), Or a persulfate complex (such as KHSO 5 ̇KHSO 4 ̇K 2 SO 4 ).
於本發明中,特別地,該含氮五元雜環化合物(nitrogen containing five-member heterocyclic compounds)係溶於該蝕刻劑之中以作為該濕式蝕刻製程之中的一金屬護膜(特別是作為具有較高還原電位之第一金屬之有機護膜);並且,就含量(濃度)上而言,前述蝕刻劑於溶劑(即,水)中的含量係介於5g/L至250g/L之間,而該含氮五元雜環化合物於該溶劑之中的含量則介於0.01g/L至50g/L之間。並且,必須強調的是,本發明之可有效減緩賈凡尼效應之蝕刻液中,其含氮五元雜環化合物可以是三氮五元雜環化合物(即,三唑化合物),且其基礎的化學結構係如下列化學式1或化學式2所示:
於化學式1與化學式2之中,R1為一第一有機基團或是氫,且該第一有機基團係選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸。 並且,化學式2所表示之該含氮五元雜環化合物為一個1,3,5-R1-1,2,4-三氮唑。In Chemical Formula 1 and Chemical Formula 2, R1 is a first organic group or hydrogen, and the first organic group is selected from any one of the group consisting of ethers, alcohols, acids, and alkane. Alkene, alkyne, benzene, phenol, and benzoic acid. Further, the nitrogen-containing five-membered heterocyclic compound represented by Chemical Formula 2 is a 1,3,5-R1-1,2,4-triazole.
於本發明之中,更可增加一個或者兩個第二有機基團或是氫至該1,3,5-R1-1,2,4-三氮唑之中,使得該含氮五元雜環化合物成為正離子,並藉由令該含氮五元雜環化合物帶有至少一負離子,而使其化學式達到電荷平衡;其中,增加有一個有機基團或是氫的該含氮五元雜環化合物係如下列化學式3或者化學式4所表示;並且,增加有兩個有機基團或是氫的該含氮五元雜環化合物係如下列化學式5所表示:
於上述化學式3至化學式5之中,R2為該第二有機基團或是氫,且該第二有機基團係任意選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;且該負離子係選自下列群組之中的任一者:氟離 子(F- )、氯離子(Cl- )、溴離子(Br- )、碘離子(I- )、四氟化硼離子(BF4 - )、硫酸根離子(SO4 2- )、與硫酸氫根離子(HSO4 - )。In the above Chemical Formula 3 to Chemical Formula 5, R 2 is the second organic group or hydrogen, and the second organic group is arbitrarily selected from any one of the following groups: ether, alcohol, acid, An alkane, an alkene, an alkyne, a benzene, a phenol, and a benzoic acid; and the negative ion is selected from any one of the group consisting of fluoride ion (F - ), chloride ion (Cl - ), and bromide ion (Br - ) Iodine ion (I - ), boron tetrafluoride ion (BF 4 - ), sulfate ion (SO 4 2- ), and hydrogen sulfate ion (HSO 4 - ).
另外,於本發明之可有效減緩賈凡尼效應之蝕刻液中,其三氮五元雜環化合物(即,三唑化合物)的化學結構也可以是如下列化學式6或化學式7所示:
於化學式6與化學式7之中,R1為一第一有機基團或是氫,且該第一有機基團係選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;並且,化學式7所表示之該含氮五元雜環化合物為一個1,4,5-R1-1,2,3-三氮唑。In Chemical Formula 6 and Chemical Formula 7, R1 is a first organic group or hydrogen, and the first organic group is selected from any one of the group consisting of ethers, alcohols, acids, and alkane. The alkene, alkyne, benzene, phenol, and benzoic acid; and the nitrogen-containing five-membered heterocyclic compound represented by Chemical Formula 7 is a 1,4,5-R1-1,2,3-triazole.
此外,於本發明之中,更可增加一個或者兩個第二有機基團或是氫至該1,4,5-R1-1,2,3-三氮唑之中,使得該含氮五元雜環化合物成為正離子,並藉由令該含氮五元雜環化合物帶有至少一負離子,而使其化學式達到電荷平衡;其中,增加有一個第二有機基團或是氫的該含氮五元雜環化合物係如下列化學式8或者化學式9所表示,並且,增加有兩個第二有機基團或是氫的該含氮五元雜環化合物係
如下列化學式10所表示:
於上述化學式8至化學式10之中,R2為一第二有機基團或是氫,且該第二有機基團係任意選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;且該負離子係選自下列群組之中的任一者:氟離子(F- )、氯離子(Cl- )、溴離子(Br- )、碘離子(I- )、四氟化硼離子(BF4 - )、硫酸根離子(SO4 2- )、與硫酸氫根離子(HSO4 - )。In the above Chemical Formula 8 to Chemical Formula 10, R 2 is a second organic group or hydrogen, and the second organic group is arbitrarily selected from any one of the following groups: ether, alcohol, acid, An alkane, an alkene, an alkyne, a benzene, a phenol, and a benzoic acid; and the negative ion is selected from any one of the group consisting of fluoride ion (F - ), chloride ion (Cl - ), and bromide ion (Br - ) Iodine ion (I - ), boron tetrafluoride ion (BF 4 - ), sulfate ion (SO 4 2- ), and hydrogen sulfate ion (HSO 4 - ).
另外,必須加以說明的是,雖然上述化學式1~化學式10所表示的化學結構機皆為三氮五元雜環化合物,但並非以此限制本發明之蝕刻液中的含氮五元雜環化合物的形式;於實際的應用中,該含氮五元雜環化合物也可以是四氮五元雜環化合物(即,四唑化合物),且其化學結構係由下列化學式11所表示;於化學式11中,R1為一 有機基團或是氫,且該有機基團係選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;並且,化學式11所表示之該含氮五元雜環化合物為一個1,5-R1-四氮唑。In addition, it is to be noted that although the chemical structural units represented by the above Chemical Formulas 1 to 10 are all a three-nitrogen five-membered heterocyclic compound, the nitrogen-containing five-membered heterocyclic compound in the etching solution of the present invention is not limited thereby. In a practical application, the nitrogen-containing five-membered heterocyclic compound may also be a tetra-nitrogen five-membered heterocyclic compound (ie, a tetrazole compound), and its chemical structure is represented by the following chemical formula 11; Medium, R1 is one The organic group is either hydrogen and the organic group is selected from any one of the group consisting of ethers, alcohols, acids, alkanes, alkenes, alkynes, benzenes, phenols, and benzoic acids; and, Formula 11 The nitrogen-containing five-membered heterocyclic compound represented is a 1,5-R1-tetrazole.
並且,更可增加一個、兩個或三個第二有機基團或是氫至該1,5-R1-四氮唑之中,使得該含氮五元雜環化合物成為正離子並帶有至少一負離子,使化學式達到電荷平衡;其中,增加有一個有機基團或是氫的該含氮五元雜環化合物係如下列化學式12、化學式13或者化學式14所表示;並且,增加有兩個有機基團的該含氮五元雜環化合物係如下列化學式15、化學式16或者化學式17所表示;再者,增加有三個有機基團或是氫的該含氮五元雜環化合物係如下列化學式18所表示:
於上述化學式12至化學式18之中,R2為一第二有機基團或是氫,且該有機基團係選自於下列群組之中的任一者:醚、醇、酸、烷、烯、炔、苯、苯酚、與苯酸;並且,該負離子基團係下列群組之中的任一者:氟離子(F- )、氯離子(Cl- )、溴離子(Br- )、碘離子(I- )、四氟化硼離子(BF4 - )、硫酸根離子(SO4 2- )、與硫酸氫根離子(HSO4 - )。In the above Chemical Formula 12 to Chemical Formula 18, R 2 is a second organic group or hydrogen, and the organic group is selected from any one of the following groups: an ether, an alcohol, an acid, an alkene, an alkene. , alkyne, benzene, phenol, and benzoic acid; and, the negative ion group is any one of the following groups: fluoride ion (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodine Ions (I - ), boron tetrafluoride ions (BF 4 - ), sulfate ions (SO 4 2- ), and hydrogen sulfate ions (HSO 4 - ).
如此,經由上述,本發明之可有效減緩賈凡尼效應之蝕刻液,其組成與化學結構皆已被清楚且完整地揭露;接下來,各種實驗數據將於下述之中呈現以證明本發 明之可有效減緩賈凡尼效應之蝕刻液的可實施性。請參閱第四圖,係具有一銅層與一金層之一基板的上視圖。如第四圖之圖(a)所示,其包含一實驗組與一對照組,且圖中的基板10具有彼此連接的金層11與銅層12,其中該金層11與銅層12的面積比為1000:1。並且,如第五圖所示之銅層的立體示意圖,基板10上的銅層12之直徑與高度分別為40μm與20μm。Thus, through the above, the etchant of the present invention which can effectively alleviate the Giovanni effect has its composition and chemical structure clearly and completely disclosed; next, various experimental data will be presented below to prove the hair. It can effectively reduce the applicability of the etchant solution of the Jaffany effect. Please refer to the fourth figure, which is a top view of a substrate having a copper layer and a gold layer. As shown in the figure (a) of the fourth figure, it comprises an experimental group and a control group, and the substrate 10 in the figure has a gold layer 11 and a copper layer 12 connected to each other, wherein the gold layer 11 and the copper layer 12 The area ratio is 1000:1. Moreover, as shown in the perspective view of the copper layer shown in FIG. 5, the diameter and height of the copper layer 12 on the substrate 10 are 40 μm and 20 μm, respectively.
承上述之說明,並且,如第四圖之圖(b)所示,其亦包含一實驗組與一對照組,且圖中的基板10具有彼此連接的金層11與銅層12,其中該金層11與銅層12的面積比為500:1;此外,如第四圖之圖(c)所示,其亦包含一實驗組與一對照組,且圖中的基板10具有彼此連接的金層11與銅層12,其中該金層11與銅層12的面積比為250:1;再者,如第四圖之圖(d)所示,其亦包含一實驗組與一對照組,且圖中的基板10具有彼此連接的金層11與銅層12,其中該金層11與銅層12的面積比為100:1。In the above description, and as shown in the figure (b) of the fourth figure, it also includes an experimental group and a control group, and the substrate 10 in the figure has a gold layer 11 and a copper layer 12 connected to each other, wherein The area ratio of the gold layer 11 to the copper layer 12 is 500:1; further, as shown in the figure (c) of the fourth figure, it also includes an experimental group and a control group, and the substrate 10 in the figure has a connection with each other. The gold layer 11 and the copper layer 12, wherein the area ratio of the gold layer 11 to the copper layer 12 is 250:1; further, as shown in the figure (d) of the fourth figure, it also includes an experimental group and a control group. The substrate 10 in the figure has a gold layer 11 and a copper layer 12 connected to each other, wherein the area ratio of the gold layer 11 to the copper layer 12 is 100:1.
[實驗一]於實驗一中,係將10%硫酸+3%雙氧水溶於水中以調製出一第一對照組蝕刻液;並且將10%硫酸+3%雙氧水與5g/L的1,5-二苯基四唑(即,四氮五元雜環化合物)溶於水中以調製出一第一實驗組蝕刻液,其中,該1,5-二苯基四唑的化學結構係由下列化學式19所表示;
請參閱第六圖,係實驗一之銅層的顯微影像圖,其中,第六圖之圖(a1)與圖(b1)所示為對照組與實驗組之銅層12其進行濕式蝕刻前的顯微影像。進一步地,係以上述所調配的第一對照組蝕刻液與第一實驗組蝕刻液分別對第四圖之圖(a)與所示之對照組與實驗組進行濕式蝕刻;如此,分別經濕式蝕刻30秒與60秒後,如第六圖之圖(a2)與圖(a3)所示,對照組的銅層12明顯地因為賈凡尼效應(galvanic effect)之影響而導致過度蝕刻的現象,甚至整個銅面都幾乎被蝕刻殆盡。反觀實驗組的銅層12,如第六圖之圖(b2)、圖(b3)與圖(b4)所示,其歷經30秒、90秒與150秒之後仍舊保持著完整的銅面,此結果顯示可有效抑制賈凡尼效應使實驗組的銅層12減緩過度蝕刻的現象。Please refer to the sixth figure, which is a microscopic image of the copper layer of Experiment 1. The figure (a1) and (b1) of the sixth figure show the wet etching of the copper layer 12 of the control group and the experimental group. Front microscopic image. Further, the first control etchant prepared in the above manner and the first experimental etchant are wet etched respectively on the fourth graph (a) and the control group and the experimental group as shown; After wet etching for 30 seconds and 60 seconds, as shown in the second figure (a2) and (a3), the copper layer 12 of the control group was significantly over-etched due to the influence of the galvanic effect. The phenomenon, even the entire copper surface is almost etched out. In contrast, the copper layer 12 of the experimental group, as shown in the sixth figure (b2), the figure (b3) and the figure (b4), still maintains a complete copper surface after 30 seconds, 90 seconds, and 150 seconds. The results show that the Giovanni effect can be effectively suppressed to slow the over-etching of the copper layer 12 of the experimental group.
[實驗二]進一步地,於實驗二中,係將10%硫酸+3%雙氧水溶於水中以調製出一第二對照組蝕刻液;並且將10%硫酸+3%雙氧水與7g/L的1-苯基-1,2,4-三氮唑(即,三氮五元雜環化合物)溶於水中以調製出一第二實驗組蝕刻液,其中,該1-苯基-1,2,4-三氮唑的化學結構係由下列化學式20所表示;
請參閱第七圖,係實驗二之銅層的顯微影像圖,其中,第七圖之圖(a1)與圖(b1)所示為對照組與實驗組之銅層12其進行濕式蝕刻前的顯微影像。進一步地,係以上述所調配的第二對照組蝕刻液與第二實驗組蝕刻液分別對第四圖之圖(a)與所示之對照組與實驗組進行濕式蝕刻;如此,分別經濕式蝕刻30秒與60秒後,如第七圖之圖(a2)與圖(a3)所示,對照組的銅層12明顯地因為賈凡尼效應(galvanic effect)之影響而導致過度蝕刻的現象,甚至整個銅面都幾乎被蝕刻殆盡。反觀實驗組的銅層12,如第七圖之圖(b2)、圖(b3)與圖(b4)所示,其歷經30秒、90秒與150秒之後仍舊保持著完整的銅面,此結果顯示可有效抑制賈凡尼效應使實驗組的銅層12減緩過度蝕刻的現象。Please refer to the seventh figure, which is a microscopic image of the copper layer of Experiment 2. The seventh layer (a1) and (b1) show the wet etching of the copper layer 12 of the control group and the experimental group. Front microscopic image. Further, the second control etchant prepared in the above manner and the second experimental etchant are wet etched respectively on the fourth graph (a) and the control group and the experimental group as shown; After wet etching for 30 seconds and 60 seconds, as shown in the seventh diagram (a2) and (a3), the copper layer 12 of the control group was significantly over-etched due to the influence of the galvanic effect. The phenomenon, even the entire copper surface is almost etched out. In contrast, the copper layer 12 of the experimental group, as shown in the seventh figure (b2), the figure (b3) and the figure (b4), still maintains a complete copper surface after 30 seconds, 90 seconds, and 150 seconds. The results show that the Giovanni effect can be effectively suppressed to slow the over-etching of the copper layer 12 of the experimental group.
如此,上述係已完整且清楚地說明本發明之可有效減緩賈凡尼效應之蝕刻液之組成與化學結構,並且亦透過實驗驗證了該蝕刻液之可行性與效能;經由上述,吾人可以得知本發明係具有下列之技術特徵與優點:Thus, the above system has completely and clearly illustrated the composition and chemical structure of the etching solution of the present invention which can effectively alleviate the Giovanni effect, and also verified the feasibility and effectiveness of the etching solution through experiments; The invention has the following technical features and advantages:
1.於本發明中,主要係依特定的比例將一蝕刻劑與一含氮五元雜環化合物溶於水中,以製成一蝕刻液;如此,當使用者應用此蝕刻液對包含至少一第一金屬(例如金)與至少一第二金屬(例如銅)之一基板進行濕式蝕刻時,該含氮五元雜環化合物會於具有較高還原電位之第一金屬(即,金)上形成一有機護膜,進而有效避免第二金屬因受到賈凡尼效應(galvanic effect)之影響而導致過度蝕刻的現象。1. In the present invention, an etchant and a nitrogen-containing five-membered heterocyclic compound are dissolved in water in a specific ratio to form an etchant; thus, when the user applies the etchant pair to at least one When the first metal (for example, gold) and the substrate of at least one second metal (for example, copper) are wet-etched, the nitrogen-containing five-membered heterocyclic compound will be in the first metal (ie, gold) having a higher reduction potential. An organic film is formed thereon, thereby effectively preventing the second metal from being over-etched due to the influence of the galvanic effect.
2.承上述第1點,此外,於本發明中,與該含氮五元雜環化合物一同混成蝕刻液的蝕刻劑,其種類與形式並沒有,可以是常用氯化銅,也可以是過氧化氫-硫酸、過氧化氫-磷酸、氯化銅-鹽酸、氯化鐵-鹽酸、鹽酸-硝酸、過硫酸鈉、或是過硫酸鹽複合物。因此,由於用以調配成本發明之蝕刻液的蝕刻劑可以是任何形式,這顯現了把本發明之蝕刻液具有相當廣泛的應用層面。2. In the above-mentioned first point, in addition, in the present invention, the etchant which is mixed with the nitrogen-containing five-membered heterocyclic compound to form an etching liquid is not used in the form and form, and may be copper chloride or may be used. Hydrogen peroxide - sulfuric acid, hydrogen peroxide - phosphoric acid, copper chloride - hydrochloric acid, ferric chloride - hydrochloric acid, hydrochloric acid - nitric acid, sodium persulfate, or persulfate complex. Therefore, since the etchant for dispensing the etching liquid of the invention can be in any form, it appears that the etching liquid of the present invention has a fairly wide application level.
必須加以強調的是,上述之詳細說明係針對本發明可行實施例之具體說明,惟該實施例並非用以限制本發明之專利範圍,凡未脫離本發明技藝精神所為之等效實施或變更,均應包含於本案之專利範圍中。It is to be understood that the foregoing detailed description of the embodiments of the present invention is not intended to Both should be included in the scope of the patent in this case.
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