TWI480405B - Physical vapor deposition device - Google Patents

Description

Physical vapor deposition device

The present invention relates to the field of semiconductor manufacturing technology, and more particularly to a physical vapor deposition apparatus.

In a physical vapor deposition (PVD) sputtering process, a negative bias is usually applied to a sputtering target to excite a working gas (eg, argon (Ar), etc.) in the reaction chamber to Plasma is applied to the ions in the plasma to bombard the sputtering target, thereby causing the target material to be sputtered and deposited on the wafer or substrate. Different application fields (such as semiconductors, solar energy, light emitting diodes, etc.) generally require different process parameters such as sputtering voltage and sputtering rate. Especially for conductive films such as indium tin oxide (ITO) and aluminum zinc oxide (AZO) used in solar energy, LED and other fields, it is required to use a lower sputtering voltage to ensure Sputter deposited films have better process performance.

As described above, in a conventional physical vapor deposition apparatus, a direct current power source applies a direct current power to a sputtering target to excite a gas into a plasma and generate a negative bias on the sputtering target to attract The ions in the plasma bombard the sputter target, thereby depositing the sputtered target material onto the substrate carried by the susceptor. However, traditional physical vapor deposition equipment will bring a large number of special applications (for example, ITO sputtering in the LED field). problem. First, DC sputtering produces a large voltage (e.g., on the order of hundreds of volts) on the sputter target and produces a large DC bias (e.g., on the order of tens of volts) on the surface of the substrate. For ITO sputtering in the LED field, high target voltage or large DC bias can cause damage to the substrate or wafer. In addition, at a certain direct current (DC) power, a lower deposition rate due to lower plasma density due to DC sputtering.

In order to solve the problem of excessive sputtering DC bias, it is currently in the art to start sputtering by simultaneously loading RF and DC on a sputtering target. For example, in Chinese Patent Application No. 200980143935.2, radio frequency power is fed through a cylindrical electrode onto a sputtering target. However, due to the large coupling capacitance of the cylindrical electrode and the outer wall of the enclosure, part of the radio frequency power is lost due to the coupling capacitance, which makes it difficult for the plasma to form a glow discharge and causes waste of radio frequency power.

It is an object of the present invention to provide a physical vapor deposition apparatus which can perform uniform sputtering of a sputtering target without changing the configuration of the magnetron driving member by changing the electrode structure. Shooting, thereby overcoming one of the technical problems existing in the prior art.

To achieve the foregoing objective, the present invention provides a physical vapor deposition apparatus comprising: a reaction chamber including a top wall, a sputtering target, and a substrate supporting member, the sputtering target being adjacent to the top wall, The substrate supporting member is disposed in the reaction chamber and opposite to the sputtering target; a DC power source is coupled to the sputtering target; an RF power source, the output end of the RF power source is coupled to the RF matcher Connected to the RF target member in sequence, the RF feed member includes a distribution ring and a plurality of distribution strips spaced apart along the circumferential direction of the distribution ring, the distribution ring being coupled to the sputtering target via the distribution strip, And the RF feed component is coupled to the RF power source via the distribution ring.

The physical vapor deposition apparatus provided by the embodiment of the invention minimizes the influence on the magnetron driving component without changing the arrangement of the magnetron driving components by changing the feeding electrode structure. In addition, uniform sputtering of the sputter target is maximized by employing a radio frequency feedthrough that distributes the ring.

Further, the physical vapor deposition apparatus according to the present invention has the following additional technical features:

According to one embodiment of the invention, the distribution ring is a plurality of, the distribution rings are parallel to each other and spaced along the axial direction of the distribution rings, and the adjacent two distribution rings are connected via the distribution bar.

According to an embodiment of the invention, the projection ring has a circular shape in its radial section.

According to an embodiment of the invention, the distribution strips are evenly distributed along the circumferential direction of the distribution ring.

According to one embodiment of the invention, the width of the cross-section of the distribution strips is greater than or equal to 5 millimeters (mm) and the thickness is greater than or equal to 0.1 mm.

According to one embodiment of the invention, the RF feedthrough component is made of copper, silver or gold.

According to an embodiment of the invention, each distribution strip has at least two distribution sections and a connection between adjacent two distribution sections Connected.

According to an embodiment of the invention, the distribution sections extend in the axial direction of the distribution ring.

According to an embodiment of the invention, the distribution sections extend obliquely inwards or outwards with respect to the axial direction of the distribution ring.

According to an embodiment of the invention, the connecting section extends along a plane parallel to the distribution ring.

According to an embodiment of the invention, the connecting section extends obliquely upwards or downwards with respect to the plane in which the distribution ring lies.

According to one embodiment of the invention, the frequency of the RF power source is between 2 megahertz (MHz) and 27.12 MHz, more specifically 2 MHz, 13.56 MHz or 27.12 MHz.

According to an embodiment of the present invention, the physical vapor deposition apparatus further includes: a variable reactance component connected in series between the substrate supporting component and the ground for adjusting the DC of the substrate bias.

According to an embodiment of the invention, the variable reactance component is a variable capacitor, a variable inductor or a circuit composed of a variable capacitor and an inductor.

According to one embodiment of the invention, the sputtering target is a metal oxide target.

According to an embodiment of the invention, the metal oxide target is an indium tin oxide (ITO) target or an aluminum zinc oxide (AZO) target.

According to an embodiment of the present invention, the content of tin oxide in the indium tin oxide target is from 0.1% to 20%.

Additional aspects and advantages of the present invention will be described in the following description. Partially, it will be apparent from the following description or through the practice of the invention.

1‧‧‧reaction chamber

11‧‧‧Base

110‧‧‧ openings

12‧‧‧ side wall

141‧‧‧ Valve

142‧‧‧ gas source

144‧‧‧ catheter

190‧‧‧ Controller

2‧‧‧ Backplane

21‧‧‧Insulation parts

22‧‧‧ top wall

3‧‧‧Substrate support parts

4‧‧‧ mask

40‧‧‧ Shielding space

5‧‧‧Magnetron

61‧‧‧RF feed components

610‧‧‧Variable Capacitors

611‧‧‧ distribution ring

612‧‧‧ distribution strip

6121‧‧‧ allocation section

6122‧‧‧Connection section

62‧‧‧RF power supply

63‧‧‧RF matcher

71‧‧‧DC power supply

72‧‧‧RF filter

8‧‧‧Variable reactance components

91‧‧‧Electrode

92‧‧‧RF power supply

93‧‧‧matcher

100‧‧‧Physical vapor deposition apparatus

200‧‧‧Shot target

Y‧‧‧ axial

The above and/or additional aspects and advantages of the present invention will become more apparent and <RTIgt;

1 is a schematic view of a physical vapor deposition apparatus according to an embodiment of the present invention.

2 is a schematic view showing a first embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.

3 is a schematic view showing a second embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.

4 is a schematic view showing a third embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.

Figure 5 is a schematic view showing a fourth embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.

Figure 6 is a schematic view showing a fifth embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.

Figure 7 is a schematic view showing a sixth embodiment of an electrode in a physical vapor deposition apparatus according to an embodiment of the present invention.

FIG. 8 is a schematic diagram of a physical vapor deposition apparatus according to another embodiment of the present invention.

Figure 9 is a schematic illustration of a variable reactance component in the physical vapor deposition apparatus shown in Figure 8.

Embodiments for describing the present invention in detail will be described in the following figures The same or similar elements or elements having the same or similar functions are denoted by the same or similar symbols throughout the specification. In the following, the present invention will be further described with reference to the following drawings and examples, which are intended to be illustrative only and not to be construed as limiting the invention.

It should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "top", "bottom", "inside" and "outside" in this specification. The orientation or positional relationship shown in the drawings is merely for the convenience of describing the present invention and the description is simplified, and does not mean or imply that the device or component referred to must have a specific orientation or must be constructed and operated in a specific orientation, thus It is not to be understood as limiting the invention. In addition, the terms "first", "second" and the like are used for the purpose of description only, and are not to be understood as meaning or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" and "second" may include one or more features, either explicitly or implicitly.

It should be noted that, unless otherwise specified and limited in the specification, the terms "installation", "connected", "connected" and the like should be understood broadly, for example, it may be a fixed connection or may be detachable. Connected, or integrally connected; may be mechanically connected or electrically connected; may be directly connected, may be indirectly connected through an intermediate medium, or may be internal communication between two components. For the person having ordinary skill in the art, the specific meaning of the above terms in the present invention can be understood in a specific case. In addition, in the present invention, the "on" or "below" of the second feature may include direct contact of the first and second features, and may include first and second, unless otherwise specifically defined and defined. Features are not in direct contact Instead, it is contacted by additional features between them.

The technical feature of the present invention is that, by changing the existing radio frequency access mode, that is, changing the feed electrode structure of the present invention (which will be described in detail below), it is realized without affecting the configuration of the magnetron driving components. The effects of magnetron drive components are minimized. In addition, uniform sputtering of the sputtering target is most effectively achieved by using a radio frequency feeding member that distributes the ring. The invention will now be described in detail.

Physical Vapor Deposition Device

The above technical features of the present invention are described in detail below with reference to the drawings. As shown in FIG. 1, a physical vapor deposition apparatus 100 for sputtering a sputtering target 200 and depositing the sputtered target material is performed according to an embodiment of the present invention. Wafer or substrate (not shown).

As shown in FIG. 1 , the physical vapor deposition apparatus 100 provided by the embodiment of the present invention may include a reaction chamber 1 , a back plate 2 , a substrate supporting member 3 , a shielding cover 4 , a magnetron 5 , and a magnetron 5 . The RF feed component 61 and a RF power source 62.

The top of the reaction chamber 1 is open and the bottom is formed with an opening 110, and the reaction chamber 1 is grounded.

The bottom surface of the backing plate 2 forms the top wall 22 of the reaction chamber 1. The sputtering target 200 is disposed on the top wall 22. In practical applications, the sputtering target 200 and the backing plate 2 can be fixed by welding. Connected, and both are conductive. The backing plate 2 is provided at the top of the reaction chamber 1 by an insulating member 21, and closes the top of the reaction chamber 1. The substrate supporting member 3 is for placing a substrate and extending into the reaction chamber 1 through the opening 110 to make the substrate (not Shown) is disposed opposite the sputtering target 200. Alternatively, the substrate supporting member 3 may be an electrostatic chuck.

Alternatively, as shown in FIG. 1, the reaction chamber 1 includes a base 11 and a side wall 12, wherein the opening 110 is formed on the base 11, and the base 11 is grounded. The side wall 12 is disposed on the base 11, and the reaction chamber 1 is defined by the base 11 and the side wall 12, wherein the insulating member 21 is disposed between the top of the side wall 12 and the backing plate 2 to allow the backing plate 2 and the reaction chamber 1 to be Electrical insulation further insulates the sputter target 200 attached to the backing plate 2 from the ground.

As shown in FIG. 1, the shielding cover 4 is made of a metal material and is disposed above the backing plate 2 for shielding electromagnetic waves, wherein the shielding cover 4 and the backing plate 2 define a shielding space 40.

The radio frequency feeding member 61 is disposed in the shielding cover 4 and connected to the shielding cover 4, and the lower end of the radio frequency feeding member 61 is connected to the edge of the backing plate 2.

The RF power source 62 is coupled to the RF feed component 61 via a RF matcher 63 to transmit RF power to the backplane 2, i.e., to feed RF power to the backplane 2 for coupling to the sputtering target 200. The RF matcher 63 can maximize the RF power to the RF feed component 61. The structure of the RF feedthrough 61 will be described in more detail below with reference to Figures 2 through 6.

As shown in FIG. 1, the magnetron 5 is disposed in the shielding space 40 and located at the top of the backboard 2. A gas source 142 supplies a working gas to the reaction chamber 1, for example, argon gas, one or more oxygen-containing gases or a nitrogen-containing gas, and the working gas can react with the sputter material, thereby forming a film layer on the substrate. The reacted working gas and reaction by-products are discharged from the reaction chamber 1 through a vacuum pump (not shown).

In operation, a working gas (for example, argon gas) is introduced into the reaction chamber 1 from the gas source 142, and the RF power source 62 applies RF power to the sputtering target 200 via the RF matching unit 63 and the RF feeding member 61. Above, the argon gas in the reaction chamber 1 is excited into a plasma, and a negative bias is generated on the sputtering target 200. The negative bias attracts argon ions to bombard the sputtering target 200, thereby sputtering the material of the sputtering target 200 and depositing it on the substrate or wafer on the substrate support member 3.

As shown in Figure 1, the reaction chamber 1 can be controlled by a controller 190, which is typically designed to control the reaction chamber 1, and typically includes a central processing unit (CPU) (not shown) ), memory (not shown), and support circuits (ie, I/O) (not shown). The CPU can be any type of computer processor used in an industrial environment for controlling various system functions, substrate movement, etc., as well as monitoring work (eg, substrate support component temperature, chamber process time, I/O signal, etc.). The memory is connected to the CPU, and the memory can be one or more memories that are easily available, such as random access memory (RAM), read only memory (ROM), A floppy disk, hard drive, or any other form of digital storage, local or remote storage. Software instructions and materials can be encoded and stored in memory for instructing the CPU to operate.

As shown in FIG. 1, the physical vapor deposition apparatus 100 further includes a DC power source (ie, a DC power source) 71 disposed near the shield 4 and connected to the backplane 2 via a DC connection bar (not shown). To apply DC power to the sputtering target 200. During the process, DC power and radio frequency (RF) are simultaneously transmitted through the DC power source 71 and the RF power source 62. Power is applied to the sputter target 200 to produce a higher density of plasma to significantly reduce the target voltage, thereby reducing damage to the substrate or wafer; and, in addition, high density plasma The high particle flux can significantly increase the deposition rate, which in turn increases process efficiency.

In addition, since the physical gas phase device 100 adopting such a dual-source structure (using both the DC power source 71 and the RF power source 62), the penetration of the material is enhanced, and it can be used not only for sputtering a conventional copper target but also for A sputtering target for forming an ITO or AZO thin film is sputtered, thereby expanding the range of application materials of the physical vapor phase device 100.

It should be noted that when the physical vapor deposition apparatus 100 of one embodiment of the present invention is used for sputtering an ITO target, the content of tin oxide in the sputtering target may be from 0.1% to 20%.

As shown in FIG. 1, the physical vapor deposition apparatus 100 further includes an RF filter 72 disposed between the DC power source 71 and the RF feed unit 61 for filtering the RF power. Herein, under the premise of ensuring normal DC power transmission, the RF power is filtered from the DC loop between the DC power source 71 and the RF feed component 61 to prevent the RF voltage from causing damage to the DC power source 71.

In the above embodiment, the frequency of the radio frequency power source 62 may be a high frequency such as 2 megahertz (MHz), 13.56 MHz or 27.12 MHz, and the radio frequency power may be less than 3000 watts (W).

Preferably, in one embodiment of the present invention, the DC bias of the substrate on the substrate supporting member 3 can be adjusted by adjusting the ratio of the RF power of the RF power source 62 and the DC power of the DC power source 71. . For example, the RF power of the RF power source 62 is 600 W, and the DC power source 71 The DC power is 100 W, at which time the bias voltage on the substrate is substantially zero, thereby avoiding damage to the substrate.

In an example of the present invention, the substrate supporting member 3 can be electrically suspended. In another example of the present invention, the substrate supporting member 3 may be grounded. In still another embodiment of the present invention, the physical vapor deposition apparatus 100 further includes an electrode 91 and a radio frequency power source 92. As shown in FIG. 1, the electrode 91 is connected to the substrate supporting member 3, and the RF power source 92 is matched. The device 93 is connected to the electrode 91 to transmit radio frequency power to the substrate supporting member 3, thereby generating a radio frequency bias.

Electrode Structure

The electrode structure of the above-described RF feeding member 61 will be described in detail below.

As described above, the RF power source 62 is coupled to the RF feed component 61 by the RF matcher 63 to transmit RF power to the edge of the backplane 2. In one aspect, the RF matcher 63 can maximize the RF power to the RF feed component 61; on the other hand, the RF matcher 63 can isolate other power sources (eg, DC power) that may be connected to the Sputter target 200. The RF matcher 63 itself and the RF power source 62 are damaged. Since it is located at the position of the central axis of the sputtering target 200, it is usually occupied by other components such as a magnetron driving member (not shown). Therefore, the RF power emitted by the RF power source 62 can only be input from the non-central axis position of the sputtering target 200, resulting in uneven RF feeding, thereby affecting the uniformity of plasma distribution ultimately generated in the reaction chamber 1. .

Therefore, the present invention adopts a feeding mode of the distribution ring 611, and the RF feeding through the distribution ring 611 is changed from point feeding to surface feeding, and further Achieve the goal of uniform RF feed.

In one embodiment of the present invention, as shown in FIGS. 2 to 7, the radio frequency feeding member 61 includes a distribution ring 611 and a plurality of distribution bars 612 spaced apart along the circumferential direction of the distribution ring 611. The distribution ring 611 is via a radio frequency. The matcher 63 is coupled to the RF power source 62, as shown in FIG. Each distribution ring 611 is coupled to the backing plate 2 via a distribution strip 612 for coupling to a sputtering target (not shown). As shown in FIG. 2, the projection shape of the distribution ring 611 in its radial cross section is formed into a circular shape for the purpose of uniformly distributing radio frequency power.

In order to produce a more uniform plasma in the reaction chamber 1, RF feed can be performed in a manner of a multilayer distribution ring 611. As shown in FIG. 3, the RF feedthrough 61 can include a plurality of distribution rings 611 (two layer distribution rings 611 are shown in FIG. 3). The distribution rings 611 are parallel to each other and are spaced apart along the axial direction Y of the distribution ring 611. The adjacent two distribution rings 611 are connected via a distribution bar 612, and the distribution ring 611 closest to the sputtering target 200 is It is connected to the backing plate 2 via the distribution bar 612 so as to be coupled to a sputtering target (not shown).

When RF power is fed in, the RF power is first input to the uppermost distribution ring 611, and then the RF power is sequentially fed from top to bottom via the distribution bar 612 to another distribution ring 611 located below the uppermost distribution ring 611. Therefore, the "bird's nest"-like RF feed-in structure of the present invention can distribute the RF power multiple times as compared with the conventional cylindrical feed structure, thereby making the RF feed more uniform. In addition, since the RF power is distributed multiple times through the "bird's nest" structure, the RF power distribution can be made more uniform, which is compared with the conventional transmission of RF power over a short distance. Compared with the standing wave effect caused by the high frequency component, the RF power can reach the sputtering target (not shown) even after reaching the backing plate 2, so as to ensure the uniformity of the sputtering target. Sputtering, whereby the standing wave effect can be avoided.

It should be noted that the electrode structure of the present invention does not affect the arrangement of the magnetron driving components as compared with the conventional structure in which the radio frequency power is applied through the structure of the conductive hollow cylinder at the center of the sputtering target. The effects of magnetron drive components are minimized. Furthermore, uniform sputtering of the sputtering target is achieved to the utmost without affecting the existing design.

In one example of the present invention, as shown in FIG. 3, the projection shape of the distribution ring 611 in its radial direction (direction perpendicular to the axial direction of the distribution ring) is formed into a rectangular shape. Of course, the present invention is not limited thereto, and in other examples of the present invention, the projection shape of the distribution ring 611 in its radial section may also be formed into a circular shape (as shown in FIG. 2), a ring shape or a number of sides more than three. Any shape such as a polygonal shape of the side may be employed as long as a circumferential ring structure capable of performing RF power distribution, and may of course be circular.

According to one embodiment of the invention, the number of distribution bars 612 between adjacent two distribution rings 611 and the number of distribution bars 612 between the distribution ring 611 closest to the sputtering target and the sputtering target 200 may be Different from each other. As shown in FIG. 3, the number of distribution bars 612 located between the uppermost distribution ring 611 and the lowermost distribution ring 611 is different from the number of distribution bars 612 located between the lowermost distribution ring 611 and the backing plate 2. It should be noted that the number of the distribution bars 612 is not particularly limited as long as the RF power can be evenly distributed.

Further, as shown in FIG. 3, the area surrounded by the plurality of distribution rings 611 may be in the vertical direction (ie, the axial direction of the distribution ring) and The sputtering target (not shown) is sequentially increased, that is, the area enclosed by the distribution ring 611 closer to the sputtering target is larger. Thereby, the distribution of the radio frequency power is sequentially made uniform in the direction perpendicular to the sputtering target. It should be noted that the term "vertical direction" herein refers to the direction in which the RF feeding member 61 is disposed on the backboard 2, as shown in FIG. 3, and the vertical direction is the axial direction Y of the distribution ring 611.

In some examples of the invention, each layer includes at least three distribution bars 612 that are evenly distributed in the circumferential direction. Alternatively, the distribution strip 612 is made of a metallic material such as copper. Of course, the distribution strip 612 can also be made of other metallic materials such as aluminum, silver, gold, stainless steel, alloys, and the like. More preferably, the width of the distribution strip 612 is greater than or equal to 5 mm and its thickness is greater than or equal to 0.1 mm.

The structure of the radio frequency body entrance member 61 will be further described below with reference to FIG. 4 shows the structure of the RF feed member 61 having a layer of distribution rings 611. In the example shown in FIG. 4, the projection shape of the distribution ring 611 in its radial section is formed into a rectangular shape, and the radio frequency feeding member 61 includes four strips uniformly distributed in the circumferential direction of the sputtering target (not shown). The distribution bar 612 has upper ends of the four distribution bars 612 connected to the rectangular distribution ring 611, and the lower ends of the four distribution bars 612 are evenly and spacedly connected to the edge of the back plate 2. Thereby, the radio frequency power is transmitted to the distribution ring 611 through the RF matching unit 63, and is uniformly delivered to the backing plate 2 through the four distribution bars 612, and then transferred to the sputtering target, thereby generating on the sputtering target. Negative bias.

An exemplary structure of the distribution bar 612 will be described below with reference to FIGS. 3 to 7. As shown in FIG. 4, each of the distribution strips 612 has two distribution sections 6121 and one connection section 6122, wherein the connection section 6122 Connected between two distribution sections 6121 and extending along a plane parallel to the distribution ring 611, and two ends of the connection section 6122 are respectively connected to one ends of the two distribution sections 6121; the other end of the distribution section 6121 near the distribution ring 611 Connected to the distribution ring 611; the other end of the distribution section 6121 near the sputtering target 200 is connected to the backing plate 2. Alternatively, the connecting portion 6122 can also extend obliquely upward or downward with respect to the plane of the distribution ring 611, that is, the extending direction of the connecting portion 6122 is at an acute angle to the plane of the distribution ring 611, as long as the two ends thereof can respectively be adjacent to each other. The two allocation segments 6121 can be connected.

According to an embodiment of the present invention, the plurality of distribution sections 6121 may extend parallel to each other in the axial direction of the distribution ring 611 (i.e., the vertical direction) and toward the sputtering target (not shown). Alternatively, as shown in FIGS. 5 and 6, the plurality of distribution sections 6121 may also extend obliquely outward or inward toward the direction of the sputtering target with respect to the axial direction of the distribution ring 611, that is, the extension of the distribution section 6121. The direction is an acute angle to the axial direction of the distribution ring 611.

According to an embodiment of the present invention, as shown in FIG. 7, each of the distribution strips 612 may also have three or more distribution sections 6121. In this case, the number of the connection sections 6122 is correspondingly multiple, and each connection section 6122 is The two ends are connected between the two adjacent distribution sections 6121 and extend along a plane parallel to the distribution ring 611. Alternatively, the connection section 6122 can also extend obliquely upward or downward with respect to the plane of the distribution ring 611; The other end of the distribution section 6121 near the distribution ring 611 is connected to the distribution ring 611; the other end of the distribution section 6121 closest to the backing plate 2 is connected to the sputtering target 200. Through the specific structure of the distribution bar 612 described above, the uniformity of the distribution of the radio frequency power can be further improved.

In practical applications, each distribution bar 612 may not be performed. The continuous structure is segmented, and a plurality of distribution bars 612 extend parallel to each other in the direction of the sputtering target (not shown) along the axial direction of the distribution ring 611 from the distribution ring 611. However, it should be noted that each of the distribution bars 612 may also extend obliquely outward or inward from the direction of the distribution ring 611 toward the sputtering target relative to the axial direction of the distribution ring 611.

Variable Reactance Regulation

The variable reactance adjusting structure of the lower electrode of the physical vapor deposition apparatus 100 provided by the present invention will be described below with reference to FIG. In another embodiment of the present invention, the physical vapor deposition apparatus 100 further includes a variable reactance component 8, and as shown in FIG. 8, the variable reactance component 8 is connected in series between the substrate supporting member 3 and the ground. To adjust the DC bias of the substrate. Specifically, the variable reactance component 8 is a variable capacitor (as shown in FIG. 9a), a variable inductor (as shown in FIG. 9b), or a parallel circuit of a variable capacitor and an inductor (as shown in FIG. 9c). Here, since the substrate (not shown) on the substrate supporting member 3 is a part of the plasma load, the potential of the substrate on the radio frequency circuit can be adjusted by adding the variable reactance member 8 thereto, thereby adjusting The DC bias of the substrate. For example, when the variable reactance component 8 is a variable capacitor, a capacitance of about 300 picofarad (PF) may be employed, whereby the DC bias voltage on the substrate is zero.

It should be noted that in the physical vapor deposition apparatus 100, the grounding reactance of the control electrode can be used to adjust the bombardment on the surface of the substrate, thereby affecting the step coverage and the properties of the deposited film, such as grain size and film. Stress, crystal orientation, film density, roughness and film composition. Therefore, the variable reactance component 8 can be used to change the deposition rate, the etching rate, and the like. In another embodiment, the variable reactance component 8 can be deposited or etched, or prevented from sinking, by appropriately adjusting the ground reactance of the electrode/substrate. Accumulate or etch. The variable capacitor 610 is set to adjust the ground impedance, thus adjusting the interaction between the ions in the plasma and the substrate during processing.

"Process"

The process of the physical vapor deposition apparatus provided by the embodiment of the present invention will be described below with reference to FIG. 1 and FIG. 8 , wherein the RF power source 62 and the DC power source 71 collectively apply power to the sputtering target 200 as an example. Here, the combination of RF and DC power sources enables lower overall RF power to be used during processing compared to RF power only, which can help reduce plasma damage to the substrate. To increase process throughput. Of course, RF power can also be applied to the sputtering target 200 alone using only the RF power source 62.

In operation, the supply of working gas from the gas source 142 to the reaction chamber 1 is controlled by a valve 141, such as by supplying argon gas through conduit 144. At this time, the RF power source 62 applies RF power to the sputtering target 200 through the RF feeding component 61 to excite the argon gas in the reaction chamber 1 into a plasma; here, the DC power source 71 will DC Power is also transferred to the sputter target 200 through the RF feedthrough 61, thereby creating a negative bias on the sputter target 200. Since the radio frequency feeding member 61 of the present invention adopts a "bird's nest"-like radio frequency feeding structure, it can distribute the radio frequency power multiple times, which enables the radio frequency power and the direct current voltage to be uniformly applied to the sputtering target 200, This produces a higher density of plasma; in addition, since the sheath bias of the plasma is inversely proportional to its density, the negative bias generated on the sputter target 200 is significantly reduced, thereby reducing the substrate or crystal Damage caused by the circle, in addition, the high particle flux brought by the high-density plasma can significantly increase the deposition rate, thereby improving the process efficiency.

The negative bias voltage loaded on the sputtering target 200 can attract argon ions to bombard the sputtering target 200, sputter the material of the sputtering target 200, and deposit it on the substrate on the substrate supporting member 3, This completes the process.

At this time, the substrate supporting member is adjusted by adjusting the ratio of the RF power of the RF power source 62 to the DC power of the DC power source 71 (as shown in FIG. 1) or by the variable reactance member 8 (as shown in FIG. 8). 3 DC bias on the substrate.

Other configurations and operations of physical vapor deposition apparatus in accordance with embodiments of the present invention are known to those of ordinary skill in the art and will therefore not be described in detail.

In the present specification, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" means the combination of the embodiments Particular features, structures, materials or features described in the examples are included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.

While the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art The scope of the invention should be limited by the scope of the claims and the equivalents thereof.

1‧‧‧reaction chamber

11‧‧‧Base

110‧‧‧ openings

12‧‧‧ side wall

141‧‧‧ Valve

142‧‧‧ gas source

144‧‧‧ catheter

190‧‧‧ Controller

2‧‧‧ Backplane

21‧‧‧Insulation parts

22‧‧‧ top wall

3‧‧‧Substrate support parts

4‧‧‧ mask

40‧‧‧ Shielding space

5‧‧‧Magnetron

61‧‧‧RF feed components

62‧‧‧RF power supply

63‧‧‧RF matcher

71‧‧‧DC power supply

72‧‧‧RF filter

91‧‧‧Electrode

92‧‧‧RF power supply

93‧‧‧matcher

100‧‧‧Physical vapor deposition apparatus

200‧‧‧Shot target

Claims (16)

A physical vapor deposition apparatus comprising: a reaction chamber including a top wall, a sputtering target, and a substrate supporting member, the sputtering target being adjacent to the top wall, the substrate supporting member being disposed at The reaction chamber is opposite to the sputtering target; a DC power source is coupled to the sputtering target; and an RF power source, the output end of the RF power source is coupled to an RF matcher and an RF feed The input member is sequentially connected, and the RF feed member includes a distribution ring and a plurality of distribution strips spaced apart along the circumferential direction of the distribution ring, the distribution ring being coupled to the sputtering target via the distribution strips, the RF feed The input component is coupled to the RF power source via the distribution ring. The physical vapor deposition apparatus of claim 1, wherein the distribution ring is plural, the distribution rings are parallel to each other and disposed along an axial interval of the distribution rings, and the adjacent two distribution rings are connected thereto. The distribution bars are connected. The physical vapor deposition apparatus of claim 1, wherein the distribution ring has a circular shape in a radial cross section. The physical vapor deposition apparatus of claim 1, wherein the distribution strips have a cross section having a width greater than or equal to 5 mm and a thickness greater than or equal to 0.1 mm. The physical vapor deposition apparatus of claim 1, wherein the radio frequency feed component is made of copper, silver or gold. The physical vapor deposition apparatus according to any one of claims 1 to 5, wherein each of the distribution strips has at least two distribution sections, and a connection section is connected between the adjacent two distribution sections. The physical vapor deposition apparatus of claim 6, wherein the aliquot The mating section extends in the axial direction of the distribution ring. The physical vapor deposition apparatus of claim 6, wherein the distribution sections extend obliquely inward or outward relative to the axial direction of the distribution ring. The physical vapor deposition apparatus of claim 6, wherein the connecting section extends along a plane parallel to the distribution ring. The physical vapor deposition apparatus of claim 6, wherein the connecting section extends obliquely upward or downward with respect to a plane in which the distribution ring is located. The physical vapor deposition apparatus of claim 1, wherein the frequency of the radio frequency power source is between 2 megahertz (MHz) and 27.12 MHz. The physical vapor deposition apparatus of claim 1, wherein the physical vapor deposition apparatus comprises: a variable reactance component connected in series between the substrate supporting member and the ground. The physical vapor deposition apparatus of claim 13, wherein the variable reactance component is a variable capacitor, a variable inductor, or a circuit composed of a variable capacitor and an inductor. The physical vapor deposition apparatus of claim 1, wherein the sputtering target is a metal oxide target. The physical vapor deposition apparatus of claim 14, wherein the metal oxide target is an indium tin oxide target or an aluminum zinc target. The physical vapor deposition apparatus of claim 15, wherein the indium tin oxide target has a tin oxide content of 0.1% to 20%.