JP2010090445A - Sputtering system and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputtering system where the increase in the temperature of an anode is suppressed and the suppression of particles is possible in a film deposition stage. <P>SOLUTION: The sputtering system 10 at least includes: a vacuum tank 1; a target 2 arranged at the inside of the vacuum tank; a first power source 11 applying negative voltage to a target; a substrate stand 3 arranged so as to face the target within the vacuum tank; an anode 4 arranged so as to surround a space S located between the target and the substrate stand within the vacuum; and a second power source 12 applying positive potential to the anode. The anode forms a divided structure composed of: a first electrode 5 located in the vicinity of the target side; a second electrode 6 located in the vicinity of the substrate stand side; and a third electrode 7 located between the first electrode and the second electrode. Then, the second power source is composed so as to control the positive potential to be applied to the anode. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a kind of thin film forming apparatus, a sputtering apparatus, and a film forming method using the sputtering apparatus. Specifically, when a thin film is formed using a sputtering apparatus, it is deposited on an exposed surface in a vacuum chamber. The present invention relates to a technique for suppressing generation of particles caused by peeling or cracking of a thin film.

  Sputtering apparatuses are actively used in various industrial fields as apparatuses for forming a thin film on the surface of an object. In particular, in the manufacture of various electronic devices such as LSIs, sputtering apparatuses are frequently used to create various conductive films and insulating films.

In a sputtering apparatus, an earth shield and a deposition preventing plate are usually used as an anode with respect to a target sputtering cathode. The configuration is shown in FIG. FIG. 7 is a schematic diagram showing an example of the configuration of a conventional sputtering apparatus and showing the main part thereof.
The sputtering apparatus 50 has a vacuum chamber 51, and a target 52 is disposed at an upper position in the internal space of the vacuum chamber 51. Further, in the internal space of the vacuum chamber 51, a substrate stand 53 is attached at a lower position (for example, in a state insulated from the wall surface of the vacuum chamber 51). An electrode having a suction function (not shown) is disposed inside the substrate base 53, the inside of the vacuum chamber 51 is evacuated, the substrate 58 is placed on the substrate base 53, and a voltage is applied to the suction electrode. 58 is electrostatically attracted to the surface of the substrate base 53.

A sputtering power supply 61 is connected to the target 52, and the vacuum chamber 51 is connected to the ground potential. The inside of the vacuum chamber 51 is evacuated, and the substrate 58 is electrostatically adsorbed on the substrate table 53. Then, a sputtering gas (for example, mixed gas (argon gas + nitrogen gas)) is introduced into the vacuum chamber 51, and the sputtering power supply 61 And a negative voltage is applied to the target to generate plasma near the surface of the target 52. When ionized Ar ⁺ ions generated in the plasma are incident on the target 52, the material constituting the target 52 jumps out as sputtering particles from the surface of the target 52.

  In this sputtering apparatus 50, an earth shield 55 is installed so as to surround the periphery of the target 52, and a lower shield 56, on the substrate stage 53 side, so as to surround a space located between the target 52 and the substrate stage 53, An upper shield 57 is disposed on the target 52 side. The earth shield 55, the lower shield 56, and the upper shield 57 constitute an anode, and are all placed at a ground potential that is the same potential as the vacuum chamber 51.

On the other hand, high frequency power is applied to the substrate stand 53 by a bias power source 59, and the substrate 58 is placed at a negative potential by self-bias. Accordingly, electrons in the plasma are attracted to the anode, and sputtered particles having a positive charge jumping out of the target 52 are attracted to the substrate 58. Therefore, the sputtered particles fly in the space s inside the earth shield 55, the lower shield 56, and the upper shield 57 constituting the anode, reach the surface of the substrate 58, and a thin film is formed on the surface of the substrate 58.
Then, after a thin film having a predetermined thickness is formed on the surface of the substrate 58, the substrate 58 is cooled, and then the processed substrate 58 is taken out of the vacuum chamber 51, and the unprocessed substrate 58 is placed in the vacuum chamber 51. By carrying in, the thin film forming operation can be repeated.

  In such a conventional sputtering apparatus 50, it is inevitable that sputtered particles emitted from the target 52 are deposited not only on the surface of the substrate 58 but also on the exposed surface in the vacuum chamber 51 during film formation. When the thin film deposits on the exposed surface overlap, so-called particles such as peeling or cracking of the thin film are generated due to internal stress or self-weight. The peeled thin film floats in the vacuum chamber 51 as fine particles having a certain size. When the fine particles adhere to the substrate 58, there may be a case where a shape defect or a structural defect such as a minute protrusion is formed on the thin film to be produced.

  However, in the sputtering apparatus 50 described above, when the sputtering power supply 61 is activated and a negative voltage is applied to the target 52 as indicated by an arrow in FIG. 8, the current flowing from the sputtering power supply 61 is applied to the anode in the immediate vicinity of the target 52. It almost flows through a certain earth shield 55. If it does so, the temperature rise will become intense by an electric current flowing, and it will become high temperature of 300 to 400 degreeC. Then, when the film formation is completed, the temperature of the earth shield 55 rapidly decreases.

  However, the earth shield 55 made of a metal such as stainless steel, Ti (titanium), or Al (aluminum) repeatedly expands and contracts due to a temperature increase or temperature decrease in the film formation process. Therefore, the thin film formed on the earth shield 55 is easy to peel off, and if it is a hard thin film (hard film), the thin film may be cracked. As a result, the conventional sputtering apparatus 50 has a problem that a large amount of particles are generated.

Also, as shown in FIG. 9, a sputtering apparatus configured to improve the step coverage of a thin film formed on the substrate surface by applying a positive voltage to the upper shield constituting the deposition preventing plate has also been proposed. . FIG. 9 is another schematic configuration example of a conventional sputtering apparatus, and is a schematic view showing the main part thereof.
This sputtering apparatus 70 is different from the above-described sputtering apparatus 50 in that an earth shield 55 and a lower shield 56 constituting an anode are placed at a ground potential which is the same potential as the vacuum chamber 51, and the upper shield 57 The configuration is the same except that a control power supply 62 for applying a positive voltage is connected (see, for example, Patent Document 1).

However, in the above-described sputtering apparatus 70, when a positive voltage is applied to the upper shield 57 by the control power supply 62, the current flowing from the sputtering power supply 61 almost flows to the upper shield 57 as indicated by an arrow in FIG. 10. It may end up. As a result, the temperature of the upper shield 57 increases rapidly due to the current flowing. Then, when the film formation is completed, the temperature of the upper shield 57 rapidly decreases. Therefore, the thin film formed on the upper shield 57 is easily peeled off due to a temperature rise or a temperature drop in the film forming process, and the thin film formed on the upper shield 57 is easily peeled off. Will do. As a result, the sputtering apparatus 70 also generates a large amount of particles.
As described above, in recent sputtering apparatuses for semiconductor production, control of particle generation is very important, but no effective means capable of suppressing particles has been proposed so far.
JP 2002-80962 A

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a sputtering apparatus capable of suppressing the temperature rise of the anode during the film forming process and suppressing the generation of particles.
Another object of the present invention is to provide a film forming method that suppresses the generation of particles due to the anode and can be mass-produced even if it is a hard thin film (hard film).

  A sputtering apparatus according to a first aspect of the present invention includes a vacuum chamber, a target disposed in the vacuum chamber, a first power source for applying a negative voltage to the target, and in the vacuum chamber facing the target. A substrate base disposed, an anode disposed in the vacuum chamber so as to surround a space located between the target and the substrate base, and a second power source for applying a positive potential to the anode. A sputtering apparatus comprising at least a first electrode located near the target side in the space, a second electrode located near the substrate stage side, and the first electrode; A divided structure comprising a third electrode positioned between the second electrode and the second electrode is formed, and the second power source is configured to control a positive potential applied to the anode. To.

  A sputtering apparatus according to claim 2 of the present invention is the sputtering apparatus according to claim 1, wherein the second power supply applies a positive potential to the third electrode constituting the anode. And

  A sputtering apparatus according to claim 3 of the present invention further comprises a third power source for applying a positive potential to the second electrode constituting the anode in the sputtering apparatus according to claim 1 or 2. It is characterized by that.

  According to a fourth aspect of the present invention, there is provided a film forming method comprising: a vacuum chamber; a target disposed in the vacuum chamber; a first power source that applies a negative voltage to the target; and the target in the vacuum chamber. A substrate table disposed oppositely, an anode disposed in the vacuum chamber so as to surround a space located between the target and the substrate table, and a second that applies a positive potential to the anode A power source, wherein the anode is a first electrode located near the target side in the space, a second electrode located near the substrate stage side, and the first electrode and the second electrode Forming a film using a sputtering apparatus that has a divided structure composed of a third electrode positioned between the electrode and the second power source so that a positive potential applied to the anode can be controlled. The way When the absolute value of the voltage applied to the target by the first power source is defined as V1, and the absolute value of the voltage applied to the anode from the second power source is defined as V2, V1 is A hard film is formed on the substrate placed on the substrate table under a setting condition greater than V2.

  The film forming method according to claim 5 of the present invention is the film forming method according to claim 4, wherein the V2 is + 2V to + 20V.

According to the sputtering apparatus of the present invention, the anode is located between the first electrode located near the target side, the second electrode located near the substrate stage, and the first electrode and the second electrode. A divided structure composed of a third electrode is formed, and a second power supply is provided so that a positive potential applied to the anode can be controlled. Therefore, the current flowing from the first power source can be distributed by the anode having the divided structure, and it is possible to suppress the temperature of only a specific portion from becoming higher than necessary.
Therefore, it is possible to provide a sputtering apparatus capable of suppressing the temperature rise of the anode during the film formation process and suppressing the generation of particles.

In the film forming method of the present invention, the absolute value of the voltage applied to the target from the first power source is defined as V1, and the absolute value of the voltage applied to the anode from the second power source is defined as V2. In addition, a hard film is formed on the substrate placed on the substrate table under a setting condition where V1 is larger than V2. Therefore, it is possible to continuously form a film for a long time without suppressing generation of particles and frequently providing an opportunity to clean the inside of the vacuum chamber.
Therefore, the film forming method according to the present invention suppresses the generation of particles due to the anode, and enables mass production even for a hard thin film (hard film).

Hereinafter, an embodiment of the present invention will be described.
FIG. 1 is a schematic view showing the structure of the first sputtering apparatus according to the present embodiment.
A sputtering apparatus 10 according to the present embodiment includes at least a vacuum chamber 1, a target 2, a substrate table 3, and an anode 4.

  The vacuum chamber 1 is an airtight vacuum vessel and is electrically connected to the ground potential. Here, being connected to the ground potential means a ground potential state or a grounded state. Although not shown, an exhaust port is formed in the bottom wall of the vacuum chamber 1, and a vacuum pump is connected to the exhaust port. The vacuum pump is activated and the inside of the vacuum chamber 1 is evacuated from the exhaust port.

The target 2 is formed of a thin film material to be formed on the surface of the substrate 8, and can be, for example, Ti (titanium) in the present embodiment. This target 2 is in the internal space of the vacuum chamber 1, is disposed at an upper position (inside the ceiling side), and is connected to a first power supply 11 provided outside the vacuum chamber 1.
The first power supply 11 is a so-called sputtering power supply, and applies a negative voltage to the target 2 during sputtering.

The substrate table 3 is in the internal space of the vacuum chamber 1 and is disposed at a lower position, for example, facing the target 2 while being electrically insulated from the wall surface of the vacuum chamber 1. That is, the surface of the substrate table 3 is exposed in the vacuum chamber 1 and is disposed so as to face the target 2 in parallel.
The substrate table 3 is provided outside the vacuum chamber 1 and is connected to a bias power source 9 so that high-frequency power is applied. Therefore, the substrate 8 is placed at a negative potential by self-bias.
In addition, an electrode having an adsorption function (not shown) is arranged inside the substrate table 3. When the substrate 8 is placed on the substrate table 3 and a voltage is applied to the adsorption electrode, the substrate 8 is placed on the surface of the substrate table 3. It is designed to be electrostatically attracted. In this case, a configuration in which a voltage for electrostatic adsorption is applied to the bias electrode 9 can be employed. Furthermore, a heater (not shown) is disposed inside the substrate table 3.

  The anode 4 is arranged so as to surround a space S located between the target 2 and the substrate table 3 in the internal space of the vacuum chamber 1. The anode 4 includes a first electrode 5 located near the target 2, a second electrode 6 located near the substrate stage 3, and a first electrode 5 located between the first electrode 5 and the second electrode 6. A divided structure composed of three electrodes 7 is formed. Here, the term “having a divided structure” means a so-called electrically floating state, and a state of being electrically separated from other electrodes.

  The anode 4 is connected to a second power source 12 provided outside the vacuum chamber 1. The second power source 12 is configured to apply a positive potential to the anode 4 during sputtering, and is configured to control the positive potential applied to the anode 4.

The first electrode 5 is a so-called earth shield installed so as to surround the periphery of the target 2, and the first electrode 5 is grounded.
The first electrode 5 serves to prevent parts other than the target 2 from being sputtered, and is provided to stably generate plasma by preventing discharge at the outer periphery of the target. When the first electrode 5 is provided around the target 2, a current flows from the target 2 to the first electrode 5 when plasma is generated by applying a negative voltage to the target 2 via the first power supply 11.

  The second electrode 6 is an adhesion-preventing plate (lower shield) installed so as to surround the substrate base 3, and is placed at a ground potential that is the same potential as the vacuum chamber 1 in the present embodiment.

  The third electrode 7 is an adhesion-preventing plate (upper shield) installed between the first electrode 5 and the second electrode 6 as described above. In the present embodiment, the third electrode 7 is outside the vacuum chamber 1. A positive potential is applied during sputtering.

Next, a process of forming a thin film on the surface of the substrate 8 using the sputtering apparatus 10 will be described.
First, the inside of the vacuum chamber 1 is evacuated, and after the inside reaches a predetermined pressure, the substrate 8 is carried into the vacuum chamber 1 and placed on the substrate table 3.
Next, when a voltage is applied to the attracting electrode disposed inside the substrate table 3, the substrate 8 is electrostatically attracted to the surface of the substrate table 3. At that time, the heater inside the substrate table 3 is energized to generate heat, and the substrate 8 is heated.

Then, when the substrate 8 is heated to a predetermined temperature, for example, a sputtering gas in which Ar (argon) gas and H ₂ (nitrogen) gas are mixed is introduced into the vacuum chamber 1, and the first power source 11 and the bias power source 9. , And a negative voltage is applied to the target 2 and a high-frequency power is applied to the substrate table 3. Thereby, plasma of sputtering gas is generated near the surface of the target 2 and the surface of the target 2 is sputtered.

When ionized Ar ⁺ ions generated in the plasma enter the target 2, the substance constituting the target 2 jumps out as sputtering particles from the surface of the target 2. Since the sputtered particles have a positive charge, the sputtered particles that have jumped out of the target 2 are attracted to the substrate 8 placed at a negative potential, and fly in the space S inside the anode 4 to generate a large amount of sputtered particles. Eight incident on the surface. Thereby, a thin film is formed on the surface of the substrate 8.

  In the present embodiment, the target 2 is made of, for example, Ti (titanium), and Ti particles jump out of the surface of the target 2 as sputtered particles. In the vicinity of the surface of the target 2, plasma of electrons and sputtered particles is present. It is formed. When the introduction of the sputtering gas is stopped in this state, the target 2 is sputtered by the sputtered particles in the plasma.

  That is, when the absolute value of the voltage applied to the target 2 by the first power source 11 is defined as V1, and the absolute value of the voltage applied to the anode 4 from the second power source 12 is defined as V2, V1 is A hard film such as a titanium nitride (TiN) film is formed on the substrate 8 placed on the substrate table 3 under a setting condition larger than V2.

  Moreover, when starting the sputtering, if the second power source 12 is activated and a positive voltage is applied to the third electrode 7 constituting the anode 4, the electrons in the plasma are not only the first electrode 5, It is also attracted to the third electrode 7.

As described above, in the present embodiment, since the third electrode 7 is in a floating structure and the second power supply 12 is connected, a positive voltage is applied to the third electrode 7 by the second power supply 12 and an appropriate potential is applied. Is applied, the current flowing out from the first power supply 11 is distributed to the first electrode 5 and the third electrode 7, and the first electrode 5 can be prevented from becoming unnecessarily high.
Therefore, by controlling the positive potential applied to the anode and controlling the current value of the anode to distribute the current value to each electrode, the temperature rise of each electrode can be minimized. Generation of particles on the surfaces of the electrode 5 and the third electrode 7 can be suppressed.

Then, after sputtering the target 2 in this way and forming a hard thin film (here, TiN thin film) having a predetermined thickness on the surface of the substrate 8, the first power source 11, the bias power source 9, and the second power source 12 are turned on. The sputtering is stopped, the energization to the heater inside the substrate table 3 is terminated, and the substrate 8 is cooled.
Thereafter, when the temperature of the substrate 8 is lowered to a predetermined temperature, the processed substrate 8 is carried out of the vacuum chamber 1, the untreated substrate 8 is carried in, and sputtering is performed by the same process as described above.

<Second Embodiment>
Moreover, in this invention, as shown in FIG. 5, it can also be set as the sputtering device 20 of the structure which applies a positive electric potential separately with respect to a some anode.
FIG. 5 is a schematic view showing the structure of the second sputtering apparatus according to the present embodiment.
Hereinafter, a second embodiment of the present invention will be described. In the present embodiment, the description of the same components as those in the first embodiment is omitted, and is the same unless otherwise described.
As shown in FIG. 5, the sputtering apparatus 20 according to the present embodiment includes a vacuum chamber 1, a target 2, a substrate table 3, and an anode 4, and has a positive potential with respect to the second electrode 6. Is further provided with a third power source 13 for applying.

  That is, the anode 4 is positioned between the first electrode 5 located near the target 2, the second electrode 6 located near the substrate stage 3, and the first electrode 5 and the second electrode 6. The third electrode 7 is connected to a second power source 12 provided outside the vacuum chamber 1, and the second electrode 6 is connected to the vacuum chamber 1. Is connected to a third power source 13 provided outside the main body. The first electrode 5 is placed at the ground potential.

As described above, in the present embodiment, the third electrode 7 is in a floating structure and the second power source 12 is connected, and the second electrode 6 is also in a floating structure and connected to the third power source 13. Therefore, when a positive voltage is applied to the third electrode 7 by the second power source 12 and an appropriate potential is applied, and a positive voltage is applied to the second electrode 6 by the third power source 13 and an appropriate potential is applied, The current flowing out from the power source 11 is distributed to the first electrode 5, the second electrode 6, and the third electrode 7, and the first electrode 5 can be prevented from becoming unnecessarily high.
Therefore, by controlling the positive potential applied to the anode and controlling the current value of the anode to distribute the current value to each electrode, the temperature rise of each electrode can be minimized. Generation of particles on the surfaces of the electrode 5, the second electrode 6, and the third electrode 7 can be suppressed.

  Next, in order to confirm how much the generation of particles is suppressed by controlling the application of the positive potential to the anode of the second power source, the voltage value applied to the third electrode using the first sputtering device described above. And the amount of particles having a particle diameter of 0.2 μm or more and the number of processed (deposited) substrates when a hard film (= TiN film) of 30 nm was formed on the substrate were measured. At this time, the voltage of the second power source applied to the third electrode was set to 0V, 50V, and 10V as shown in Table 2. The number of deposition substrates and the amount of particles at this time are as shown in Table 1.

In addition, the film formation experiment at this time was performed under the following conditions for any voltage value.
The target is Ti, the applied power of the first power source is 18 kW, the applied power of the bias power source is 13.56 MHz, 750 W, the introduced gas is a mixed gas of 8 sccm of Ar (argon) gas and 40 sccm of N ₂ (nitrogen) gas, and the substrate temperature is 250 C.
The results are shown in FIG. FIG. 3 shows the relationship between the number of deposited substrates (also called “number of deposited substrates”) and the amount of particles by changing the voltage applied by the second power source [GND (0 V), 10 V, 50 V]. FIG.

As can be seen from Table 1 and FIG. 3, when the voltage value applied to the third electrode is 0, the current flowing from the first power source almost flows into the first electrode, so the temperature of the first electrode rises abnormally. As a result, the deposition film cracked, and when 75 films were formed, the amount of particles increased. This increase in the amount of particles is due to the fact that a large sputter current flows through the first electrode, causing the hard film (= TiN film) attached to the first electrode to crack due to temperature fluctuations of the first electrode and generate particles. It is.
In addition, when the voltage applied to the third electrode is + 50V, almost all of the current flowing from the first power source flows to the third electrode, so the temperature of the third electrode rises abnormally and the deposition film is cracked. Then, the amount of particles increased when 200 sheets were formed. This increase in the amount of particles is caused by the fact that a large sputter current flows through the third electrode, causing the hard film (= TiN film) attached to the third electrode to crack due to the temperature fluctuation of the third electrode and generate particles. It is.
However, when the voltage value applied to the third electrode is controlled to +10 V, the current flowing from the first power source is distributed and flows to the first electrode and the third electrode, so the temperature of the first electrode and the third electrode The rise was suppressed, and 400 films were formed, but the amount of particles was suppressed.

  Thus, by applying a positive potential to the third electrode and appropriately controlling the applied positive potential, the sputtering current flowing from the first power source to the anode is distributed to the first electrode and the third electrode. It can be seen that the generation of particles is suppressed without causing film cracking of the hard film (= TiN film) attached with small flow fluctuations of the electrodes.

In addition, in order to confirm how the current flowing from the first power source to the anode changed due to the application of a positive potential to the anode by the second power source, a positive voltage was applied to the third electrode by the second power source, as described above. The VI characteristics of the first power source and the second power source were measured using the first sputtering apparatus. At this time, the voltage of the second power source applied to the anode was set to each voltage value varied from 0 V to 100 V as shown in Table 1. The voltage value and current value of the first power source and the current value of the second power source at this time are as shown in Table 2.
The results are shown in FIG. FIG. 4 is a diagram illustrating VI characteristics of the voltage and current of the first power source and the current of the second power source by voltage control of the second power source.

  As can be seen from Table 2 and FIG. 4, when the voltage value of the second power source applied to the third electrode is 0 (that is, the ground potential), a current of 6.0 A flows through the third electrode. Therefore, 29.5 A of the difference from 35.5 A which is the current value of the first power source flows through the first electrode. On the other hand, when the voltage value applied to the third electrode is +10 V, a current of 23.5 A flows through the third electrode. Therefore, 12.4 A, which is the difference from 35.9 A, which is the current value of the first power source, flows through the first electrode. However, when the voltage value of the second power source applied to the third electrode is +30 V, a current of 37.6 A flows through the third electrode. Therefore, almost no current flows through the first electrode.

  Thus, by applying a positive potential to the third electrode and appropriately controlling the applied positive potential, the current flowing from the first power source to the anode can be distributed to the first electrode and the third electrode. I understand. Moreover, it can be seen that the voltage value of the second power source applied to the third electrode is preferably controlled to + 2V to + 20V.

  In this embodiment, the current flowing to the anode is distributed by the voltage control of the second power supply. However, the present invention is not limited to this, and the current flowing to the anode is distributed by the current control of the second power supply. It is good as a thing.

Schematic which shows the structure of the 1st sputtering device which concerns on this invention. Schematic which shows the flow of the electric current controlled by the 1st sputtering device of FIG. The figure which shows the relationship between the number of board | substrates, and the amount of particles. The figure which shows the relationship between the voltage of a 2nd power supply, the electric current and voltage of a 1st power supply, and the electric current of a 2nd power supply. Schematic which shows the structure of the 2nd sputtering device which concerns on this invention. Schematic which shows the flow of the electric current controlled by the 2nd sputtering device of FIG. It is the example of a structure of the conventional sputtering apparatus, and the schematic which shows the principal part. Schematic which shows the flow of the electric current by the sputtering device of FIG. Schematic which is the other structural example of the conventional sputtering apparatus, and shows the principal part. Schematic which shows the flow of the electric current by the sputtering device of FIG.

Explanation of symbols

  S space, 1 vacuum chamber, 2 target, 3 substrate stand, 4 anode, 5 first electrode (earth shield), 6 second electrode (lower shield), 7 third electrode (upper shield), 8 substrate, 9 bias power supply 10, 20 Sputtering device, 11 First power source, 12 Second power source, 13 Third power source.

Claims (5)

A vacuum chamber, a target disposed in the vacuum chamber, a first power source for applying a negative voltage to the target, a substrate table disposed in the vacuum chamber and facing the target, and in the vacuum chamber. A sputtering apparatus comprising at least an anode disposed so as to surround a space located between the target and the substrate stage, and a second power source that applies a positive potential to the anode,
The anode is a first electrode located in the vicinity of the target side in the space, a second electrode located in the vicinity of the substrate stage side, and a position between the first electrode and the second electrode. A divided structure consisting of a third electrode,
The sputtering apparatus, wherein the second power source is configured to control a positive potential applied to the anode.   The sputtering apparatus according to claim 1, wherein the second power source applies a positive potential to the third electrode constituting the anode.   The sputtering apparatus according to claim 1, further comprising a third power source that applies a positive potential to the second electrode constituting the anode. A vacuum chamber, a target disposed in the vacuum chamber, a first power source for applying a negative voltage to the target, a substrate table disposed in the vacuum chamber and facing the target, and in the vacuum chamber. And at least an anode disposed so as to surround a space located between the target and the substrate stage, and a second power source that applies a positive potential to the anode, A divided structure including a first electrode located near the target side, a second electrode located near the substrate stage side, and a third electrode located between the first electrode and the second electrode The second power source is a film forming method using a sputtering apparatus configured to control a positive potential applied to the anode,
When the absolute value of the voltage applied to the target by the first power source is defined as V1, and the absolute value of the voltage applied to the anode from the second power source is defined as V2, V1 is A film forming method, comprising: forming a hard film on a substrate placed on the substrate table under a setting condition greater than V2.   5. The film forming method according to claim 4, wherein the V2 is + 2V to + 20V.

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