TWI469466B - Power converter with short circuit protection - Google Patents

Description

Power converter with short circuit protection

The invention relates to a power converter, in particular to a power converter with short circuit protection.

With advances in semiconductor technology, many power converter chips can also be used in applications with higher operating voltages. In some power converter chips, the operating voltages of the various circuit blocks are different. Therefore, it is possible to determine whether to adopt high-voltage-resistant components according to the operating voltage of each circuit block, thereby achieving energy saving, cost reduction, and environmental protection. Consideration.

In some power converters with higher operating voltages, N-type MOS transistors are used as high-side transistors and low-end transistors for the power stage. Low side) transistor. Although a power-grade N-type metal-oxide-semiconductor transistor requires a high-voltage-resistant component, the control circuit of the N-type metal-oxide-semiconductor transistor generally only needs to operate in a voltage range of several volts, without requiring high-voltage resistance. Components to save energy and hardware costs.

However, when these power converters are packaged on a circuit board, mounted on a circuit board, or coupled to other circuit components, if these high-voltage circuit blocks are inadvertently short-circuited to other package pins or operated at high voltage Circuit blocks, when these high-voltage-resistant circuit blocks are coupled to higher voltages, will not only cause damage to these circuit blocks, but may even cause damage to other circuit components.

In view of this, how to reduce or eliminate the damage caused by the circuit block that is not resistant to high voltage in the above related field due to inadvertent coupling to a high voltage is a problem to be solved in the industry.

The present specification provides an embodiment of a power converter for being disposed in a chip package. The chip package includes a first package pin coupled to a first potential for coupling to a second potential. a second package pin, a third package pin and a fourth package pin for coupling to a load; the power converter comprises: a first N-type transistor, comprising a drain coupling Connected to the first package pin and a source coupled to the fourth package pin; a second N-type transistor including a drain coupled to the fourth package pin and a source coupled In the second package pin, a first driving circuit includes an output end coupled to a control end of the first N-type transistor to set a conductive state of the first N-type transistor; The driving circuit includes an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor; a switch coupled to the third package pin and the a first driving circuit; and a short circuit protection circuit coupled to the switch and the third package And the fourth package pin; wherein the voltage source circuit charges a capacitor coupled between the third package pin and the fourth package pin; and when the third package pin and the first When a voltage difference between the four package pins is greater than a first predetermined value, the short circuit protection circuit sets the switch to be non-conductive.

The present specification further provides an embodiment of a power converter for being disposed in a chip package. The chip package includes a first package pin for coupling to a first potential for coupling to a second a second package pin of the potential, a third package pin and a fourth package pin for coupling to a load; the power converter comprises: a first N-type transistor comprising a drain The second package is coupled to the first package pin and the source is coupled to the fourth package pin; a second N-type transistor includes a drain coupled to the fourth package pin and a source coupling Connected to the second package pin; a first driving circuit includes an output end coupled to a control end of the first N-type transistor to set a conductive state of the first N-type transistor; a driving circuit, comprising: an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor; and a short circuit protection circuit coupled to the switch, the a third package pin and the fourth package pin; wherein a voltage source circuit is coupled to the And charging a capacitor between the third package pin and the fourth package pin; and when a voltage difference between the third package pin and the fourth package pin is greater than a first preset value, The short circuit protection circuit sets the second N-type transistor to be non-conductive.

The present specification further provides an embodiment of a power converter for being disposed in a chip package. The chip package includes a first package pin for coupling to a first potential for coupling to a second a second package pin of the potential, a third package pin and a fourth package pin for coupling to a load; the power converter comprises: a first N-type transistor comprising a drain The second package is coupled to the first package pin and the source is coupled to the fourth package pin; a second N-type transistor includes a drain coupled to the fourth package pin and a source coupling Connected to the second package pin; a first driving circuit includes an output end coupled to a control end of the first N-type transistor to set a conductive state of the first N-type transistor; The second driving circuit includes an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor; a switch coupled to the third package pin and Between the first driving circuit and a short circuit protection circuit coupled to the switch, the first package And a third package pin; wherein a voltage source circuit charges a capacitor coupled between the third package pin and the fourth package pin; and when the first package pin and the When a voltage difference between the third package pins is less than a second predetermined value, the short circuit protection circuit sets the switch to be non-conductive.

The present specification further provides an embodiment of a power converter for being disposed in a chip package. The chip package includes a first package pin for coupling to a first potential for coupling to a second a second package pin of the potential, a third package pin and a fourth package pin for coupling to a load; the power converter comprises: a first N-type transistor comprising a drain The second package is coupled to the first package pin and the source is coupled to the fourth package pin; a second N-type transistor includes a drain coupled to the fourth package pin and a source coupling Connected to the second package pin; a first driving circuit includes an output end coupled to a control end of the first N-type transistor to set a conductive state of the first N-type transistor; a driving circuit, comprising: an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor; and a short circuit protection circuit coupled to the switch, the a first package pin and the third package pin; wherein a voltage source circuit is coupled to the And charging a capacitor between the third package pin and the fourth package pin; and when a voltage difference between the first package pin and the third package pin is less than a second preset value, The short circuit protection circuit sets the second N-type transistor to be non-conductive.

The present specification further provides an embodiment of a power converter for being disposed in a chip package. The chip package includes a first package pin for coupling to a first potential for coupling to a second a second package pin of the potential, a third package pin and a fourth package pin for coupling to a load; the power converter comprises: a first N-type transistor comprising a drain The second package is coupled to the first package pin and the source is coupled to the fourth package pin; a second N-type transistor includes a drain coupled to the fourth package pin and a source coupling Connected to the second package pin; a first driving circuit includes an output end coupled to a control end of the first N-type transistor to set a conductive state of the first N-type transistor; The second driving circuit includes an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor; a switch coupled to the third package pin and Between the first driving circuits; and a short circuit protection circuit coupled to the second N-type transistor a control terminal and the source; wherein a voltage source circuit charges a capacitor coupled between the third package pin and the fourth package pin; and when the second N-type transistor is controlled When a voltage difference between the terminal and the source is greater than a third predetermined value, the short circuit protection circuit sets the switch to be non-conductive.

One of the advantages of the above embodiment is that when a circuit block that is not resistant to high voltage in the power converter is inadvertently coupled to a high voltage, it is possible to protect these circuit blocks that are not resistant to high voltage and avoid damage of the components. Another advantage of the above embodiment is that it not only saves energy and hardware costs, but also balances the safety of the power converter. Other advantages of the invention will be explained in more detail by the following description and drawings.

Embodiments of the present invention will be described below in conjunction with the associated drawings. In the drawings, the same reference numerals are used to refer to the same or similar elements or process steps.

1 is a simplified functional block diagram of a power converter 100 in accordance with an embodiment of the present invention. The power converter 100 includes a first N-type transistor 110, a second N-type transistor 120, a first driving circuit 130, a second driving circuit 140, a switch 150, a voltage source circuit 160, and a short-circuit protection circuit 170.

In this embodiment, the power converter 100 is implemented by means of an integrated circuit package. The integrated circuit package of the power converter 100 includes a first package pin PVDD, a second package pin PGND, and a third. The package pin PBST and the fourth package pin POUT. In addition, the capacitor 190 is coupled between the package pins PVDD and PBST, and the power converter 100 supplies power to the load 199 through the package pin POUT.

For the sake of brevity, the components and connections in Figure 1 have been simplified or omitted. For example, in some applications, components such as inductors and capacitors disposed between power converter 100 and load 199 are not shown in FIG. 1, and other circuit blocks or package pins of power converter 100 are shown. It is also not shown in Figure 1 for ease of explanation.

The power converter 100 is coupled to the first potential through the package pin PVDD and to the second potential through the package pin PGND. For example, in one embodiment, the power converter 100 can be coupled to the ground potential through the package pin PGND, and the potential coupled through the package pin PVDD is 24 volts with respect to the potential of the ground terminal.

The transistors 110 and 120 are power stages of the power converter, the drain of the transistor 110 is coupled to the package pin PVDD, and the source of the transistor 110 is coupled to the drain of the transistor 120 and the package. The pin of the transistor 120 is coupled to the package pin PGND.

The first end of the driving circuit 130 is coupled to the voltage source circuit 160 and the package pin PBST through the switch 150. The second end of the driving circuit 130 is coupled to the source of the transistor 110 and the package pin POUT, and the driving circuit 130 The output end is coupled to the gate of the transistor 110 to control the conduction state of the transistor 110. For example, the drive circuit 130 includes a voltage buffer, and the transistor 110 can be driven in accordance with a pulse width modulation signal generated by the pulse width modulation signal generator.

The first end of the driving circuit 140 is coupled to the third potential Vd (for example, 5 volts with respect to the potential of the package pin PGND), and the second end of the driving circuit 140 is coupled to the package pin PGND, and is driven. The output of the circuit 140 is coupled to the gate of the transistor 120 to control the conduction state of the transistor 120.

In the embodiment of Figure 1, since transistors 110 and 120 will operate at a higher voltage state (e.g., 24 volts), transistors 110 and 120 need to employ components capable of withstanding higher voltages. The drive circuits 130 and 140 need only operate at a lower voltage (for example, 5 volts) to set the conduction states of the transistors 110 and 120 without using components that withstand higher voltages, thereby saving hardware area. And save energy.

The voltage source circuit 160 can charge and discharge the capacitor 190 through the package pin PBST, so that the voltage difference Vc across the capacitor 190 becomes a preset voltage value (for example, 5 volts). When the switch 150 is turned on, the driving circuit 130 can operate according to the voltage difference Vc across the capacitor 190 to control the conduction state of the transistor 110.

The short circuit protection circuit 170 is coupled between the package pins PBST and POUT. When the short circuit protection circuit 170 detects that the voltage difference between the package pins PBST and POUT is greater than the first preset value, it may represent between the package pins PBST. Inadvertently shorting to the package pin PVDD or other higher potential, the package pin PBST is coupled to an excessively high voltage. Therefore, the short circuit protection circuit 170 sets the switch 150 to be non-conductive, so that the drive circuit 130 is not damaged by being coupled to an excessive voltage. For example, the switch 150 can be implemented in the form of a transistor. In other embodiments, the switch 150 can also be implemented by using a high voltage resistant transistor or other high voltage resistant switching device to avoid damage when the switch 150 is coupled to an excessive voltage.

The short circuit protection circuit 170 may be implemented by a comparison circuit in the form of a voltage, a comparison circuit in the form of a current, and/or a current mirror circuit. When the voltage difference between the package pins PBST and POUT is greater than the first preset value, correspondingly A control signal is generated to set switch 150 to be non-conducting. For example, in one embodiment, the switch 150 is implemented by using a MOS transistor, and the short circuit protection circuit 170 is implemented by using a current mirror circuit. When the voltage difference between the package pins PBST and POUT is greater than a first preset value, The short circuit protection circuit 170 rapidly turns on the current to make the control terminal (the gate of the MOS transistor) of the switch 150 a low potential state, so that the switch 150 assumes a non-conducting state, and the driving circuit 130 can be protected from the coupling. Connected to excessive voltage and damaged.

In another embodiment, the short circuit protection circuit 170 can also be disposed between the package pins PVDD and PBST (not shown in FIG. 1). When the short circuit protection circuit 170 detects the package pins PVDD and PBST, When the voltage difference is less than the second preset value, it may represent a situation in which the package pin PVDD and the PBST may be inadvertently short-circuited, and the package pin PBST is coupled to an excessive voltage. Therefore, the short circuit protection circuit 170 sets the switch 150 to be non-conductive, so that the drive circuit 130 is not damaged by being coupled to an excessive voltage. In addition, the first preset value and the second preset value may be set to be the same or different depending on electrical characteristics of the respective circuit elements or other design considerations.

FIG. 2 is a simplified functional block diagram of a power converter 200 according to another embodiment of the present invention. Similar to the power converter 100, the power converter 200 includes a first N-type transistor 110, a second N-type transistor 120, a first driving circuit 130, a second driving circuit 140, a voltage source circuit 160, and a short-circuit protection circuit 170, The function, operation and variations of these components are described in the preceding paragraphs and therefore will not be described again. In addition, the power converter 200 further includes a high voltage resistant transistor 250, a first logic circuit 280 disposed between the driving circuit 130 and the transistor 110, and a second logic circuit disposed between the driving circuit 140 and the transistor 120. 281.

Logic circuits 280 and 281 may each comprise one or more circuit elements, for example, using a circuit architecture such as a transistor or an AND gate circuit. When the operation is normal (that is, the potential of the package pin PBST is within a preset voltage range), the logic circuit 280 is turned on to couple the driving circuit 130 to the gate of the transistor 110, and the logic circuit 281 is turned on. The driving circuit 140 is coupled to the gate of the electric transistor 120. Therefore, the transistors 110 and 120 can be rendered conductive or non-conducting depending on the settings of the driving circuits 130 and 140, respectively. When the package pin PBST is coupled to an abnormal potential (for example, the voltage difference between the package pins PBST and POUT is greater than the first preset value, or the voltage difference between the package pins PVDD and PBST is less than the second In the case of a preset value or the like, the short circuit protection circuit 170 may provide the logic circuit 280 and/or the logic circuit 281 to make the transistor 110 and/or the transistor 120 be in a non-conducting state, and the driving circuit 130 may not be subjected to the driving circuit 130. High voltage and damage.

For example, in an embodiment, the logic circuits 280 and 281 are respectively implemented by a gate circuit, and the logic circuit 280 outputs the output of the driving circuit 130 and the output of the short circuit protection circuit 170 to an AND operation. The gate of the crystal 110, and the logic circuit 281 outputs the output of the driving circuit 140 and the output of the short-circuit protection circuit 170 to the gate of the transistor 120. When operating normally, the voltage difference between the package pins PBST and POUT will be less than the first preset value (or when the voltage difference between the package pins PVDD and PBST is greater than the second preset value), short circuit protection The circuit 170 outputs a high-potential output signal to the logic circuits 280 and 281, respectively. The output signals of the driving circuits 130 and 140 and the high-potential signal are respectively used to set the conduction states of the transistors 110 and 120, respectively. . When the package pin PBST is coupled to an abnormal potential, the voltage difference between the package pins PBST and POUT is greater than the first preset value (or when the voltage difference between the package pins PVDD and PBST is less than the second In the case of a preset value or the like, the package pin PBST may be inadvertently coupled to the package pin PVDD or other higher potential, and the short circuit protection circuit 170 outputs a low potential output signal to the logic circuits 280 and 281, respectively. Regardless of the output signals of the driving circuits 130 and 140, the control terminals of the transistors 110 and 120 receive a low potential signal to exhibit a non-conduction state, so that the driving circuit 130 does not withstand excessive voltage and is damaged.

In addition, in the embodiment of FIG. 2, only one high voltage resistant transistor 250 is shown. In other embodiments, multiple high voltage resistant transistors may be used, or one or more high voltage resistant powers may be used. The crystal is implemented in a manner similar to other circuit components. Therefore, when the package pin PBST is inadvertently coupled to the package pin PVDD or other higher potential, the high voltage resistant transistor 250 can withstand a higher voltage without causing the drive circuit 130 to be damaged.

FIG. 3 is a simplified functional block diagram of a power converter 300 according to another embodiment of the present invention. Similar to the power converter 100, the power converter 300 includes a first N-type transistor 110, a second N-type transistor 120, a first driving circuit 130, a second driving circuit 140, a voltage source circuit 160, and a short-circuit protection circuit 170, The function, operation and variations of these components are described in the preceding paragraphs and therefore will not be described again.

In this embodiment, the short circuit protection circuit 170 is coupled to the gate and the source of the transistor 120 (for example, in the embodiment, the short circuit protection circuit 170 can also be coupled to the output of the driving circuit 140 and The transistor 120 is packaged with a pin PGND) and is used to set the conduction state of the switch 150. When the voltage difference between the gate and the source of the transistor 120 is greater than a third predetermined value, the representative transistor 120 is rendered conductive. If the package pin PBST is coupled to an abnormal voltage, the driver is driven. Circuit 130 can be damaged by being subjected to excessive voltage. Therefore, when the short circuit protection circuit 170 detects that the voltage difference between the gate and the source of the transistor 120 is greater than a third preset value, the short circuit protection circuit 170 sets the switch 150 to be in a non-conducting state, so that the driving circuit 130 Will not be damaged by excessive voltage. When the short circuit protection circuit 170 detects that the voltage difference between the gate and the source of the transistor 120 is less than the fourth predetermined value, the representative transistor 120 will exhibit a non-conduction state, and the driving circuit 130 will not Damaged by being subjected to excessive voltage. Therefore, the short circuit protection circuit 170 sets the switch 150 to be in an on state, so that the transistor 110 and the driving circuit 130 can operate normally. In addition, the third preset value and the fourth preset value may be set to be the same or different depending on the electrical characteristics of the transistor 120 or other circuit components.

In the above embodiments, the circuit blocks of the power converters 100 and 200 may be integrated into a single die, or may be fabricated separately on different wafers and packaged in the same chip package. For example, in one embodiment, the driving circuits 130 and 140, the voltage source circuit 160, and the short circuit protection circuit 170 can be fabricated in a wafer, and the transistors 110 and 120 and the switch 150 and the like need to be fabricated using a high-voltage-resistant component. Another wafer is then packaged in the same wafer package. Alternatively, in another embodiment, components such as voltage source circuit 160 may also be fabricated on another wafer.

In the above embodiments, the logic circuits 280 and 281 may also be integrated in the driving circuits 130 and 140, respectively, and the short circuit protection circuit 170 may be provided with the integrated driving circuits 130 and 140 to normally drive the transistors 110 and 120, or set The integrated drive circuits 130 and 140 force the transistors 110 and/or 120 to assume a non-conducting state to prevent the drive circuit 130 from being damaged due to coupling to excessive voltages.

In the above-described embodiment, the power converter 200 includes logic circuits 280 and 281 and a high voltage resistant transistor 250 to prevent the drive circuit 130 from being damaged due to coupling to an excessive voltage. In another embodiment, the power converter 200 can omit the logic circuit 280 and the high voltage resistant transistor 250. When the voltage difference between the package pins PBST and POUT is greater than the first preset value (or when the voltage difference between the package pins PVDD and PBST is less than the second preset value), the short circuit protection circuit 170 sets the logic. Circuit 281 causes transistor 120 to assume a non-conducting state. When the transistor 120 is not turned on, it is possible to prevent the driving circuit 130 from being damaged due to coupling to an excessive voltage.

In another embodiment, the power converter 200 can also omit the logic circuit 280 and employ the logic circuit 281 and the high voltage resistant transistor 250 to prevent the drive circuit 130 from being damaged due to coupling to an excessive voltage.

In another embodiment, the power converter 200 can also omit the high voltage resistant transistor 250 and employ logic circuits 280 and 281 with the switch 150 to prevent the drive circuit 130 from being damaged due to coupling to excessive voltage.

In another embodiment, when the voltage difference between the package pins PVDD and PBST is less than the second preset value, the short circuit protection circuit 170 of the power converter 200 may also set the high voltage resistant transistor 250 to be in a non-conducting state. The logic circuits 280 and 281 are not provided.

In another embodiment of FIG. 3, when the short circuit protection circuit 170 detects that the voltage difference between the gate and the source of the transistor 120 is less than a fourth predetermined value, the short circuit protection circuit 170 may also pass a period of time. The switch 150 is turned on later to further prevent the driving circuit 130 from being coupled to an abnormal voltage.

In the above embodiment, when the circuit block that is not resistant to high voltage in the power converter is inadvertently coupled to the high voltage, the short circuit protection circuit can turn off the transistor coupled to the driving circuit by turning off the transistor of the power stage. However, it can be avoided that these high-voltage-resistant driving circuits are damaged by inadvertent coupling to excessive voltage.

The above embodiment not only saves energy and hardware costs consumed by the power converter, but also balances the safety of the power converter.

Certain terms are used throughout the description and claims to refer to particular elements. However, those of ordinary skill in the art should understand that the same elements may be referred to by different nouns. The specification and the scope of patent application do not use the difference in name as the way to distinguish the components, but the difference in function of the components as the basis for differentiation. The term "including" as used in the specification and the scope of the patent application is an open term and should be interpreted as "including but not limited to". In addition, "coupled" includes any direct and indirect means of attachment herein. Therefore, if the first element is described as being coupled to the second element, the first element can be directly connected to the second element by electrical connection or wireless transmission, optical transmission or the like, or by other elements or connections. The means is indirectly electrically or signally connected to the second component.

The description of "and/or" as used herein includes any combination of one or more of the listed items. In addition, the terms of any singular are intended to include the meaning of the plural, unless otherwise specified in the specification.

The above are only the preferred embodiments of the present invention, and all changes and modifications made to the claims of the present invention are intended to be within the scope of the present invention.

100, 200, 300. . . Power converter

110, 120. . . N type transistor

130, 140. . . Drive circuit

150. . . switch

160. . . Voltage source circuit

170. . . Short circuit protection circuit

190. . . capacitance

199. . . load

250. . . High voltage resistant crystal

280, 281. . . Logic circuit

PBST, PGND. . . Package pin

POUT, PVDD. . . Package pin

1 is a simplified functional block diagram of a power converter according to an embodiment of the present invention.

2 is a simplified functional block diagram of a power converter according to another embodiment of the present invention.

FIG. 3 is a simplified functional block diagram of a power converter according to another embodiment of the present invention.

100. . . Power converter

110, 120. . . N type transistor

130, 140. . . Drive circuit

150. . . switch

160. . . Voltage source circuit

170. . . Short circuit protection circuit

190. . . capacitance

199. . . load

PBST, PGND. . . Package pin

POUT, PVDD. . . Package pin

Claims (20)

A power converter is disposed in a chip package; the chip package includes a first package pin coupled to a first potential, and a second package coupled to a second potential a third package pin and a fourth package pin for coupling to a load; the power converter includes:
a first N-type transistor, wherein a drain is coupled to the first package pin and a source is coupled to the fourth package pin;
a second N-type transistor, wherein a drain is coupled to the fourth package pin and a source is coupled to the second package pin;
a first driving circuit, comprising an output end coupled to a control end of the first N-type transistor to set an on state of the first N-type transistor;
a second driving circuit includes an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor;
a switch coupled between the third package pin and the first driving circuit; and a short circuit protection circuit coupled to the switch, the third package pin and the fourth package pin;
One of the voltage source circuits charges a capacitor coupled between the third package pin and the fourth package pin; and when the third package pin and the fourth package pin are between When the voltage difference is greater than a first predetermined value, the short circuit protection circuit sets the switch to be non-conductive. The power converter of claim 1, wherein the short circuit protection circuit sets the second N-type transistor to be non-conductive when the voltage difference is greater than the first predetermined value. The power converter of claim 2, wherein the short circuit protection circuit sets the first N-type transistor to be non-conductive when the voltage difference is greater than the first predetermined value. The power converter of 2 or 3, wherein the voltage that the first driving circuit can withstand is less than the voltage that the first N-type transistor can withstand. A power converter of 2 or 3, wherein the voltage that the first driver circuit can withstand is less than the voltage that the switch can withstand. A power converter is disposed in a chip package; the chip package includes a first package pin coupled to a first potential, and a second package coupled to a second potential a third package pin and a fourth package pin for coupling to a load; the power converter includes:
a first N-type transistor, wherein a drain is coupled to the first package pin and a source is coupled to the fourth package pin;
a second N-type transistor, wherein a drain is coupled to the fourth package pin and a source is coupled to the second package pin;
a first driving circuit, comprising an output end coupled to a control end of the first N-type transistor to set an on state of the first N-type transistor;
a second driving circuit, comprising: an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor; and a short circuit protection circuit coupled to the switch The third package pin and the fourth package pin;
One of the voltage source circuits charges a capacitor coupled between the third package pin and the fourth package pin; and when the third package pin and the fourth package pin are between When the voltage difference is greater than a first predetermined value, the short circuit protection circuit sets the second N-type transistor to be non-conductive. The power converter of claim 6, wherein the short circuit protection circuit sets the first N-type transistor to be non-conductive when the voltage difference is greater than the first predetermined value. The power converter of claim 7, further comprising:
a first logic circuit coupled between the first driving circuit and the control end of the first N-type transistor;
When the voltage difference is greater than the first preset value, the short circuit protection circuit sets the first logic circuit to set the first N-type transistor to be non-conductive. 7 or 8 power converters, including:
a second logic circuit coupled between the second driving circuit and the control end of the second N-type transistor;
When the voltage difference is greater than the first preset value, the short circuit protection circuit sets the second logic circuit to set the second N-type transistor to be non-conductive. 7 or 8 power converters, including:
A transistor is coupled between the third package pin and the first driving circuit. The power converter of claim 10, wherein the short circuit protection circuit sets the transistor to be non-conductive when the voltage difference is greater than the first predetermined value. The power converter of claim 10, wherein the first drive circuit is capable of withstanding a voltage less than a voltage that the transistor can withstand. The power converter of 7 or 8, wherein the voltage that the first driving circuit can withstand is less than the voltage that the first N-type transistor can withstand. A power converter is disposed in a chip package; the chip package includes a first package pin coupled to a first potential, and a second package coupled to a second potential a third package pin and a fourth package pin for coupling to a load; the power converter includes:
a first N-type transistor, wherein a drain is coupled to the first package pin and a source is coupled to the fourth package pin;
a second N-type transistor, wherein a drain is coupled to the fourth package pin and a source is coupled to the second package pin;
a first driving circuit, comprising an output end coupled to a control end of the first N-type transistor to set an on state of the first N-type transistor;
a second driving circuit includes an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor;
a switch coupled between the third package pin and the first driving circuit; and a short circuit protection circuit coupled to the switch, the first package pin and the third package pin;
One of the voltage source circuits charges a capacitor coupled between the third package pin and the fourth package pin; and when the first package pin and the third package pin are between When the voltage difference is less than a second preset value, the short circuit protection circuit sets the switch to be non-conductive. A power converter is disposed in a chip package; the chip package includes a first package pin coupled to a first potential, and a second package coupled to a second potential a third package pin and a fourth package pin for coupling to a load; the power converter includes:
a first N-type transistor, wherein a drain is coupled to the first package pin and a source is coupled to the fourth package pin;
a second N-type transistor, wherein a drain is coupled to the fourth package pin and a source is coupled to the second package pin;
a first driving circuit, comprising an output end coupled to a control end of the first N-type transistor to set an on state of the first N-type transistor;
a second driving circuit, comprising: an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor; and a short circuit protection circuit coupled to the switch The first package pin and the third package pin;
One of the voltage source circuits charges a capacitor coupled between the third package pin and the fourth package pin; and when the first package pin and the third package pin are between When the voltage difference is less than a second preset value, the short circuit protection circuit sets the second N-type transistor to be non-conductive. A power converter is disposed in a chip package; the chip package includes a first package pin coupled to a first potential, and a second package coupled to a second potential a third package pin and a fourth package pin for coupling to a load; the power converter includes:
a first N-type transistor, wherein a drain is coupled to the first package pin and a source is coupled to the fourth package pin;
a second N-type transistor, wherein a drain is coupled to the fourth package pin and a source is coupled to the second package pin;
a first driving circuit, comprising an output end coupled to a control end of the first N-type transistor to set an on state of the first N-type transistor;
a second driving circuit includes an output end coupled to a control end of the second N-type transistor to set an on state of the second N-type transistor;
a switch coupled between the third package pin and the first driving circuit; and a short circuit protection circuit coupled to the control end of the second N-type transistor and the source;
One of the voltage source circuits charges a capacitor coupled between the third package pin and the fourth package pin; and between the control terminal and the source of the second N-type transistor The short circuit protection circuit sets the switch to be non-conductive when a voltage difference is greater than a third predetermined value. The power converter of claim 16, wherein the short circuit protection circuit sets the switch to be conductive when the voltage difference is less than a fourth predetermined value. The power converter of claim 17, wherein the third preset value is the same as the fourth preset value. The power converter of claim 16, 17, or 18, wherein the voltage that the first driver circuit can withstand is less than the voltage that the first N-type transistor can withstand. A power converter as claimed in claim 16, 17 or 18, wherein the voltage that the first drive circuit can withstand is less than the voltage that the switch can withstand.