TWI514463B - Method for manufacturing surface bump of electrostatic adsorption plate in dry etching equipment - Google Patents

Description

Method for manufacturing surface bump of electrostatic adsorption plate in 亁 etching equipment

The invention relates to a manufacturing technology of an electrostatic static chuck (ESC) of a tantalum etching apparatus, and particularly relates to a method for manufacturing a surface bump of an electrostatic adsorption board of a tantalum etching apparatus.

The ruthenium etching process is currently used in a considerable number of industrial fields, one of which is used in the manufacturing process of liquid crystal display devices. Please refer to FIG. 1, which shows a simplified configuration of a conventional etch apparatus. The erbium etching apparatus 10 includes an upper electrode 12, a lower electrode 14, a reaction chamber 16, a gas inlet 17, and an electrostatic adsorption plate 18, and the surface of the upper electrode 12 is covered with a uniform gas hole (not shown). In the ruthenium etching process, the reaction gas is first introduced from the gas inlet 17, and the reaction gas passes through the gas hole of the upper electrode 12, enters the reaction chamber 16 between the upper electrode 12 and the lower electrode 14, and passes through the upper electrode 12 A voltage difference (RF+) is applied to the lower electrode 14 to form an electric field therebetween, which in turn plasmas or ionizes the gas in the reaction chamber 16.

When performing the ruthenium etching process, the substrate 2 (such as a glass substrate) is placed on the electrostatic adsorption plate 18, and the surface of the glass substrate 2 is directly in contact with the gas ions in the reaction chamber 16, and the electrostatic adsorption plate 18 functions. The glass substrate 2 is adsorbed and fixed to prevent the glass substrate 2 from being unnecessarily moved during the process and affecting the alignment.

Please refer to FIG. 2, which shows the structure of the electrostatic adsorption plate 18 in FIG. schematic diagram. A slit or opening 22 of a specific pattern is formed on the electrostatic adsorption plate 18, for example, a gap arranged in a square shape as shown in Fig. 2. These gaps may also be referred to as helium holes, which are used as a passage for the helium gas to flow between the glass substrate 2 and the electrostatic adsorption plate 18, and the helium gas is used to transfer heat to the glass substrate 2 by heat convection. By controlling the temperature of the glass substrate 2, the etching rate of the glass substrate 2 is uniform.

Please refer to FIG. 3 and FIG. 4, FIG. 3 is an enlarged view showing an EL region of the electrostatic adsorption plate 18 in FIG. 2, and FIG. 4 is a cross-sectional view taken along line A-B in FIG. The surface of the electrostatic adsorption plate 18 has a plurality of spherical protrusions 33 which are uniformly dispersed throughout the surface of the electrostatic adsorption plate 18. The protrusions 33 function to provide a certain space between the glass substrate 2 and the electrostatic adsorption plate 18. It is used for heat convection circulation of helium.

In the prior art, the electrostatic adsorption plate 18 generally includes a metal conductive layer 181 (such as aluminum) and a dielectric layer 182 (such as a ceramic layer) having a high dielectric constant. When a direct current is applied to the metal conductive layer 181, A coulomb static charge is generated on the dielectric layer 182 to generate electrostatic attraction, and the glass substrate 2 can be adsorbed and fixed. In the existing specifications, the ceramic layer 182 has a thickness of about 1 mm and a minimum of 0.6 mm, and the surface protrusion 33 of the dielectric layer 182 has a width of about 0.6 to 1 mm, and the protrusion 33 has a height of about 0.5 to 0.1 mm.

The conventional electrostatic adsorption plate 18 is formed by forming a ceramic layer 181 having a high dielectric constant on the surface of the aluminum material 181 by means of ceramic fusion, and then forming a surface by masking the ceramic layer 181 with a mask by means of plasma fusion. Bump 33, this mask The pattern coincides with the distribution of the protrusions 33 on the surface of the ceramic layer 181. However, this method requires an additional custom mask, and the plasma melting machine is currently expensive, which not only increases the cost, but also complicates the process and lengthens the construction period. Another way is to mechanically grind the surface protrusion 33 directly on the surface of the ceramic layer 181, but it is not easy to process the protrusion on the surface of the ceramic layer 181. On the one hand, the hardness of the ceramic layer 181 is high, and On the one hand, the success rate is not high, so this method not only causes the construction period to become longer, but also the yield problem affects the output.

It is an object of the present invention to provide a method for manufacturing a surface bump of an electrostatic adsorption plate of a tantalum etching apparatus, which can shorten the manufacturing period and reduce the cost.

In order to achieve the above object, the present invention provides a method for manufacturing a surface bump of an electrostatic adsorption plate of a ruthenium etching apparatus, the electrostatic adsorption plate comprising a metal conductive layer and a ceramic layer, and when a direct current is applied to the metal conductive layer, the ceramic A Coulomb static charge is accumulated on the layer, the manufacturing method comprising the steps of: manufacturing a plurality of spherical particles by using a dielectric material; providing the metal conductive layer, and performing ceramic fusion on the surface of the metal conductive layer to be in the metal conductive layer Forming the ceramic layer on the surface; grinding a plurality of cavities on the surface of the ceramic layer, the cavities being equal to the size of the spherical particles; and placing the spherical particles on the surface of the ceramic layer and fixing the holes .

In the present invention, a plurality of cavities are formed on the surface of the ceramic layer of the electrostatic adsorption plate, and then the spherical particles are adhered and fixed to the cavities on the surface of the ceramic layer to form surface bumps of the electrostatic adsorption plate. Made with a mating mask The surface of the electrostatic adsorption plate is convex, and the manufacturing method of the invention has the advantages of simple process, short construction period, and effective cost reduction. On the other hand, the surface convex manufacturing method of the electrostatic adsorption plate of the present invention can solve the problem that the product yield is not high due to the conventional direct mechanical grinding method.

The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.

The present invention relates to a method of fabricating surface bumps of an electrostatic chuck in a tantalum etching apparatus. The specific structure of the tantalum etching apparatus is well known and has been described above with reference to FIG. 1 and will not be described herein. The construction of the electrostatic adsorption plate is also existing, as shown in Figures 2 to 4. As mentioned above, the electrostatic adsorption plate usually comprises a metal conductive layer and a ceramic layer. When a direct current is applied to the metal conductive layer, a coulomb static charge is generated on the ceramic layer, thereby generating electrostatic attraction, so that the glass substrate can be adsorbed and fixed. . The invention focuses on the method of making bumps on the surface of the electrostatic adsorption plate, as described in detail below.

Briefly, in the present invention, a plurality of cavities are formed by mechanical processing on the surface of the ceramic layer of the electrostatic adsorption plate, and then the convex particles are adhered and fixed to the cavities on the surface of the ceramic layer, and the size of the convex particles is It is required to match the concave surface on the surface of the ceramic layer according to the predetermined specifications, so that the height of the protrusion formed on the surface of the ceramic layer is within a predetermined range after the completion of the fabrication, and the detailed fabrication process is as follows.

Referring to FIG. 5 and FIGS. 6A-6C, FIG. 5 is a flow chart showing a method of manufacturing the surface bump of the electrostatic adsorption plate in the ruthenium etching apparatus of the present invention, and FIGS. 6A to 6C are views showing the electrostatic adsorption plate of the present invention. Construction during surface bump fabrication schematic diagram.

In step S10, a plurality of spherical particles are first formed by using a dielectric material, and the spherical particles form bumps or protrusions on the surface of the electrostatic adsorption plate in a subsequent process, and the size and size of the spherical particles and the surface of the ceramic layer in the subsequent process The holes match.

In addition, these spherical particles have an appropriate hardness and can withstand the weight of the glass substrate without undergoing structural deformation. The spherical particles are made of a material having a high dielectric constant such as alumina, zirconia and yttria. It can also be the same ceramic ball as the ceramic layer of the electrostatic adsorption plate.

In terms of the production of spherical particles, these spherical particles may be formed by sintering, mechanical cutting, mold forming or grinding, or in combination of two or more of them to form spherical particles.

In step S20, as shown in Fig. 6A, a metal conductive layer 51 is provided, and ceramic fusion is performed on the surface of the metal conductive layer 51 to form a ceramic layer 52 on the surface of the metal conductive layer 51. The material of the metal conductive layer 51 may be aluminum or other metal material having good electrical conductivity. As described above, the electrostatic adsorption plate in the ruthenium etching apparatus has the metal conductive layer 51 and the ceramic layer 52, which is the basic structure of the electrostatic adsorption plate.

In step S30, a plurality of cavities 61 are honed on the surface of the ceramic layer 52, and these cavities 61 correspond to the size of the spherical particles. These cavities or depressions 61 are formed on the surface of the ceramic layer 52 as shown in Fig. 6A. The depth of the recesses 61 may be half the height of the aforementioned spherical particles, or other suitable depth values, avoiding the ball The shaped particles completely disappear into the cavity.

In the manufacture of the cavities 61 on the surface of the ceramic layer 52, these cavities 61 can be formed by drilling operations on the surface of the ceramic layer 52 by a machining process, and the arrangement of the positions of the cavities 61 is predetermined, for example, The cavities 61 are evenly distributed on the surface of the ceramic layer 52.

In step S40, the spherical particles are placed on the cavities 61 on the surface of the ceramic layer 52 and fixedly adhered to form bumps or projections on the surface of the ceramic layer 52.

In this step, the adhesive 62 is first filled in the cavity 61 on the surface of the ceramic layer 52 as shown in Fig. 6B. Since the development of automatic dispensing equipment is quite mature, this process can be accomplished by injecting the adhesive 62 at the recess 61 in the surface of the ceramic layer 52 using an automatic dispensing apparatus. In terms of material selection of the adhesive 62, the adhesive may be an epoxy resin adhesive or a ceramic adhesive.

Before the curing reaction of the adhesive 62, the spherical fine particles are uniformly dispersed to be filled into the above-mentioned cavity 61 filled with the adhesive 62, which is a structural member 63 as indicated in Fig. 6C.

Next, the aforementioned adhesive 62 is dried and solidified so that the spherical fine particles 63 are fixed to the concave holes 61 on the surface of the ceramic layer 52 as shown in Fig. 6C. The dry curing method adopted may be carried out by heating, ultraviolet curing or room temperature air drying curing according to the characteristics of the adhesive 62, or in combination with the above two or more methods to cure the adhesive 62.

The spherical particles 63 are solidified with the electrostatic adsorption plate after the adhesive 62 is cured. The surface of the porcelain layer 52 is bonded and fixed, that is, the surface 63 of the electrostatic adsorption plate is completed. However, after step S40, the quality of the protrusions 63 formed on the surface of the electrostatic adsorption plate can be further improved, for example, the spherical particles 63 fixed to the cavities 61 on the surface of the ceramic layer 52 are processed and ground to change the spherical particles. The shape of the top portion of 63 is reduced or its roughness; or the spherical particles 63 of the cavity 61 fixed to the surface of the ceramic layer 52 are sandblasted to reduce the roughness of the surface protrusions 63. On the other hand, it is also possible to first form the protrusions 63 having a height higher than the prescribed height, and then perform mechanical grinding and thinning, so that the height of the protrusions 63 formed meets the specifications.

In the present invention, a plurality of cavities are formed on the surface of the ceramic layer of the electrostatic adsorption plate, and then the spherical particles are adhered and fixed to the cavities on the surface of the ceramic layer to form surface bumps of the electrostatic adsorption plate. Compared with the surface protrusion of the electrostatic adsorption plate by the fusion of the mask, the manufacturing method of the invention has the advantages of simple process, short construction period and effective cost reduction. On the other hand, the surface convex manufacturing method of the electrostatic adsorption plate of the present invention can solve the problem that the product yield is not high due to the conventional direct mechanical grinding method.

In view of the above, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the invention, and the present invention may be made without departing from the spirit and scope of the invention. Various modifications and refinements are made, and the scope of the present invention is defined by the scope of the appended claims.

2‧‧‧Substrate

10‧‧‧亁 etching equipment

12‧‧‧Upper electrode

14‧‧‧ lower electrode

16‧‧‧Reaction chamber

17‧‧‧ gas inlet

18‧‧‧Electrostatic adsorption board

22‧‧‧ openings

33‧‧‧ bumps

51‧‧‧Metal conductive layer

52‧‧‧Ceramic layer

61‧‧‧Deep

62‧‧‧Adhesive

63‧‧‧Spherical particles

181‧‧‧Metal conductive layer

182‧‧‧Ceramic layer

S10~S40‧‧‧Steps

Figure 1 shows a simplified construction of a conventional etch apparatus.

Fig. 2 is a view showing the structure of the electrostatic adsorption plate in Fig. 1.

Fig. 3 is an enlarged view showing an EL area of the electrostatic adsorption plate in Fig. 1.

Figure 4 is a cross-sectional view along line A-B in Figure 3.

Fig. 5 is a flow chart showing a method of manufacturing the surface bump of the electrostatic adsorption plate in the tantalum etching apparatus of the present invention.

Fig. 6A is a view showing the formation of a plurality of cavities on the surface of the ceramic layer of the electrostatic adsorption plate in the present invention.

Fig. 6B is a view showing the pit filling adhesive on the surface of the ceramic layer in the present invention.

Fig. 6C is a view showing a pit in which spherical particles are filled in the surface of the ceramic layer in the present invention.

S10~S40‧‧‧Steps

Claims (9)

A method for manufacturing a surface bump of an electrostatic adsorption plate of a tantalum etching apparatus, the electrostatic adsorption plate comprising a metal conductive layer and a ceramic layer, wherein when a direct current is applied to the metal conductive layer, a coulomb static charge is accumulated on the ceramic layer, The manufacturing method comprises the steps of: manufacturing a plurality of spherical particles by using a dielectric material; providing the metal conductive layer, and performing ceramic melting on the surface of the metal conductive layer to form the ceramic layer on the surface of the metal conductive layer; The surface of the ceramic layer is ground with a plurality of cavities corresponding to the size of the spherical particles; and the spherical particles are placed on the surface of the ceramic layer and fixedly adhered. The surface bump manufacturing method of the electrostatic adsorption plate of the ruthenium etching apparatus according to the first aspect of the invention, wherein the material of the spherical fine particles is selected from the group consisting of alumina, zirconia and yttria. The surface bump manufacturing method of the electrostatic adsorption plate of the ruthenium etching apparatus according to claim 1, wherein the spherical fine particles are manufactured in a group selected from the group consisting of sintering, mechanical cutting, mold forming, and grinding. . The method of manufacturing a surface bump of an electrostatic adsorption plate of the ruthenium etching apparatus according to the first aspect of the invention, wherein the step of placing the spherical particles on a cavity on the surface of the ceramic layer and fixing the adhesion comprises: a recess on the surface of the ceramic layer is filled with a binder; The spherical particles are uniformly dispersed to fill the above-mentioned recess filled with the binder; and the binder is dried and solidified. A method of manufacturing a surface bump of an electrostatic adsorption plate of a ruthenium etching apparatus according to claim 4, wherein the adhesive is selected from the group consisting of an epoxy resin adhesive and a ceramic glue. The method for manufacturing a surface bump of an electrostatic adsorption plate according to the fourth aspect of the invention, wherein the step of filling the cavity on the surface of the ceramic layer comprises: using an automatic dispensing device; Adhesive perfusion is applied to the cavity on the surface of the ceramic layer. The surface bump manufacturing method of the electrostatic adsorption plate of the ruthenium etching apparatus according to the fourth aspect of the invention, wherein the drying and curing method adopted in the step of drying and curing the adhesive is selected from the group consisting of heating, ultraviolet curing, and chamber A group consisting of warm air drying methods. The method of manufacturing a surface bump of an electrostatic adsorption plate of a ruthenium etching apparatus according to the first aspect of the invention, wherein the step of placing the spherical particles on a cavity on the surface of the ceramic layer and fixing the adhesion further comprises : processing and grinding the spherical particles fixed in the cavity to change the shape of the top of the spherical particles. A method of manufacturing a surface bump of an electrostatic adsorption plate of a ruthenium etching apparatus according to claim 1, wherein the spherical particles are placed on the ceramic After the step of fixing the holes on the surface of the layer and fixing the adhesion, the method further comprises: sandblasting the spherical particles fixed in the cavity to reduce the roughness of the spherical particles.