TWI464826B - Processing device (a) - Google Patents
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- TWI464826B TWI464826B TW098125195A TW98125195A TWI464826B TW I464826 B TWI464826 B TW I464826B TW 098125195 A TW098125195 A TW 098125195A TW 98125195 A TW98125195 A TW 98125195A TW I464826 B TWI464826 B TW I464826B
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- holding table
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- photographing
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- 238000012545 processing Methods 0.000 title claims description 65
- 230000007246 mechanism Effects 0.000 claims description 82
- 238000005520 cutting process Methods 0.000 claims description 25
- 238000003384 imaging method Methods 0.000 claims description 21
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000007723 transport mechanism Effects 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005388 borosilicate glass Substances 0.000 claims description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 31
- 230000005540 biological transmission Effects 0.000 description 13
- 238000012546 transfer Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Machine Tool Sensing Apparatuses (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本發明係有關於一種對半導體晶圓進行加工之加工裝置,特別是有關於一種加工裝置之調準拍攝部的機構。The present invention relates to a processing apparatus for processing a semiconductor wafer, and more particularly to a mechanism for aligning a processing unit of a processing apparatus.
半導體元件製程中,係在為大略圓盤狀之半導體晶圓的表面上,藉由排列成格子狀之溝道(切斷預定線)而分隔出複數領域,且沿著溝道切斷在分隔出之各領域中形成有IC、LSI等元件之半導體晶圓,藉此分割成每一元件,製造出各個半導體晶片。In the semiconductor device process, a plurality of fields are separated by a channel (a predetermined line to be cut) arranged in a lattice shape on the surface of a substantially disk-shaped semiconductor wafer, and are separated along the channel. A semiconductor wafer in which an element such as an IC or an LSI is formed in each field is divided into each element to manufacture each semiconductor wafer.
半導體晶圓沿著溝道的切斷係藉由一般稱為切割器的切削裝置進行。除了藉由切削裝置進行切割之方法外,也開發有使用對半導體晶圓具有透過性之波長之脈衝雷射的雷射切割法。The cutting of the semiconductor wafer along the channel is performed by a cutting device generally referred to as a cutter. In addition to the method of cutting by a cutting device, a laser cutting method using a pulsed laser having a wavelength that is transparent to a semiconductor wafer has been developed.
該雷射切割方法中,係使對半導體晶圓等之被加工物(工作件)具有透過性之波長的脈衝雷射的聚光點對焦於被加工物的內部,沿著溝道照射,藉此在被加工物內部形成變質層,並沿著因為形成變質層而強度降低之溝道施加外力,以分割成各個晶片(參照如日本專利公報專利第3408805號、日本專利公開公報特開平第10-305420號)。In the laser cutting method, a focused spot of a pulsed laser having a wavelength of transparency of a workpiece (workpiece) such as a semiconductor wafer is focused on the inside of the workpiece, and is irradiated along the channel. In this case, an altered layer is formed in the inside of the workpiece, and an external force is applied to the channel which is reduced in strength due to the formation of the altered layer, so as to be divided into individual wafers (refer to Japanese Patent Laid-Open No. 3408805, Japanese Patent Laid-Open No. Hei. -305420).
使用該等加工裝置對被加工物進行加工時,令被加工物的表面(形成有電路圖案之面)朝上,將被加工物載置於夾頭台上,並且使用具有設置於夾頭台上方之可見光相機等的拍攝機構之調準機構,檢測出溝道且實施調準,並且藉令切削刀片或雷射照射頭定位於溝道,實施加工。When the workpiece is processed by using the processing device, the surface of the workpiece (the surface on which the circuit pattern is formed) faces upward, the workpiece is placed on the chuck table, and the workpiece is placed on the chuck table. The alignment mechanism of the photographing mechanism such as the visible light camera above detects the channel and performs alignment, and the cutting blade or the laser irradiation head is positioned in the channel to perform processing.
然而,也有令被加工物的表面朝下、裏面朝上,將被加工物載置於夾頭台上進行加工的情況。例如,在使用雷射對在藍寶石基板上形成發光元件之LED晶片等進行加工時,有使發光元件層的特性劣化之虞,因此宜由未形成有元件之裏面側使雷射光束射入。However, there is a case where the surface of the workpiece is faced downward and the inside faces upward, and the workpiece is placed on the chuck table for processing. For example, when processing an LED chip or the like which forms a light-emitting element on a sapphire substrate by using a laser, the characteristics of the light-emitting element layer are deteriorated. Therefore, it is preferable that the laser beam is incident from the back side where the element is not formed.
又,在表面形成有微細構造物之部份的MEMS(微機電系統:microelectro mechanical systems)中,恐有使用刀片切割進行之加工中的切削水使表面構造物破損之虞,因此也有將構造物側貼附於保持膠帶而由裏面側進行加工的情況。Further, in a MEMS (microelectro mechanical system) in which a fine structure is formed on the surface, there is a fear that the surface water is damaged by the cutting water in the processing by the blade cutting, and therefore the structure is also damaged. The side is attached to the holding tape and processed from the inside side.
進而,因切削屑附著於如CCD或CMOS等的拍攝元件等元件上而變成元件不良之被加工物在進行刀片切割時,也同樣將表面貼附於保持膠帶,由裏面側進行加工。Further, when the cutting debris adheres to an element such as an image pickup device such as a CCD or a CMOS, and the workpiece is defective in the blade cutting, the surface is attached to the holding tape in the same manner, and the workpiece is processed from the back side.
因此,如此將電路圖案或溝道的形成面保持向下且由裏面側加工之情況,也提出使用IR相機之方法作為可實施調準之方法(日本專利公開公報特開平第6-232255號及日本專利公開公報特開平第10-312979號)。Therefore, in the case where the formation surface of the circuit pattern or the channel is kept downward and processed from the back side, a method using an IR camera is also proposed as a method for performing alignment (Japanese Patent Laid-Open No. Hei 6-232255 and Japanese Patent Laid-Open Publication No. Hei 10-312979).
【專利文獻1】日本專利公報專利第3408805號[Patent Document 1] Japanese Patent Gazette Patent No. 3408805
【專利文獻2】日本專利公開公報特開平第10-305420號[Patent Document 2] Japanese Patent Laid-Open Publication No. 10-305420
【專利文獻3】日本專利公開公報特開平第6-232255號[Patent Document 3] Japanese Patent Laid-Open Publication No. Hei 6-232255
【專利文獻4】日本專利公開公報特開平第10-312979號[Patent Document 4] Japanese Patent Laid-Open Publication No. 10-312979
然而,對於在有調準圖案之層上具有如金屬層之不透光層的被加工物進行加工時、或者是由裏面對裏面具有金屬層之被加工物進行加工時,即使係使用IR相機由金屬層拍攝,也無法檢測出調準圖案或溝道,無法實施調準。However, when the workpiece having the opaque layer such as the metal layer on the layer having the alignment pattern is processed, or when the workpiece having the metal layer inside is processed from the inside, even if IR is used The camera is photographed by a metal layer, and the alignment pattern or channel cannot be detected, and alignment cannot be performed.
本發明係有鑒於此觀點而作成者,其目的在於提供一種加工裝置,該加工裝置係即使令在加工機構與拍攝對象物之間存在有不透光層之被加工物的表面朝下載置於夾頭台上,而由裏面側加工時,也不受被加工物的構造或材質所影響,可實施調準者。The present invention has been made in view of the above circumstances, and an object thereof is to provide a processing apparatus that places a surface of a workpiece having an opaque layer between a processing mechanism and an object to be downloaded. On the chuck table, when it is machined from the inside side, it is not affected by the structure or material of the workpiece, and the alignment can be implemented.
本發明可提供一種加工裝置,係具有基座者,其特徵在於包含有:保持台,係具有由用以保持被加工物之透明體所形成之保持墊者;加工機構,係用以加工保持於該保持台之被加工物者;加工傳送機構,係在與該保持台之表面平行之X軸方向及與該X軸方向垂直之Y軸方向上相對地傳送前述保持台與前述加工機構者;及拍攝機構,係安裝於前述基座並透過前述透明保持墊拍攝保持於前述保持台之被加工物,而較該保持墊位於下方;在拍攝被加工物時,前述保持台藉由前述加工傳送機構而在該拍攝機構上移動。The present invention can provide a processing apparatus having a susceptor, comprising: a holding table having a holding pad formed by a transparent body for holding a workpiece; and a processing mechanism for processing and holding The processing conveyance mechanism transmits the holding table and the processing mechanism in a direction opposite to an X-axis direction parallel to a surface of the holding table and a Y-axis direction perpendicular to the X-axis direction. And a photographing mechanism mounted on the pedestal and photographing the workpiece held by the holding table through the transparent holding mat, and being located below the holding mat; and when the workpiece is photographed, the holding table is processed by the foregoing The transport mechanism moves on the photographing mechanism.
較佳的是,加工裝置更具有支持保持台使之可旋轉且裝載於加工傳送機構上之支持匣。保持台包含有保持墊、及用以支持該保持墊之環狀支持構件。Preferably, the processing apparatus further has a support port that supports the holding table to be rotatable and loaded on the processing conveyor. The holding table includes a retaining pad and an annular support member for supporting the retaining pad.
支持匣包含有:具有可供保持台之環狀支持構件旋轉地嵌合之開口的上板;載置於加工傳送機構上之下板;及用以連結上板與下板,而在支持匣外周之至少一部份分隔成拍攝機構進入開口部的連結板,在拍攝被加工物時,保持台藉由加工傳送機構移動,藉此拍攝機構通過拍攝機構進入開口部而進入到支持匣中,並定位於保持台之正下方。The support 匣 includes: an upper plate having an opening for rotatably fitting the annular support member of the holding table; a lower plate placed on the processing transfer mechanism; and a connection for the upper plate and the lower plate, and supporting the 匣At least a part of the outer circumference is divided into a connecting plate that enters the opening of the imaging mechanism, and when the workpiece is photographed, the holding stage is moved by the processing transport mechanism, whereby the photographing mechanism enters the opening through the photographing mechanism and enters the supporting jaw. And positioned directly below the holding table.
較佳的是,保持墊係由選自於由石英玻璃、硼矽酸玻璃、藍寶石、氟化鈣、氟化鋰、及氟化鎂所構成之群的物質所構成。較佳的是,保持墊具有:具複數吸引路之形成吸引路領域、及未形成有吸引路之未形成吸引路領域,且拍攝機構進行被加工物的拍攝係透過該非形成吸引路領域來進行。Preferably, the holding mat is composed of a material selected from the group consisting of quartz glass, borosilicate glass, sapphire, calcium fluoride, lithium fluoride, and magnesium fluoride. Preferably, the holding mat has a field of forming a suction path with a plurality of suction paths, and a field of not forming a suction path in which a suction path is not formed, and the imaging means performs an image capturing of the workpiece through the non-forming suction path field. .
根據本發明,可提供一種不受被加工物的構造或材質所影響,而可就全部的被加工物實施調準之加工裝置。拍攝機構安裝於基座上,並且僅在檢測分割預定線時,保持台被加工傳送機構定位於拍攝機構上,因此不需要繁雜的構造,可達到裝置之簡約化。According to the present invention, it is possible to provide a processing apparatus which can perform alignment on all workpieces without being affected by the structure or material of the workpiece. The photographing mechanism is mounted on the susceptor, and the holding stage is positioned on the photographing mechanism by the processing conveyance mechanism only when detecting the division planned line, so that a complicated structure is not required, and the apparatus can be simplified.
以下參照圖式詳細說明本發明之實施型態。第1圖係顯示由夾頭台(保持台)之下方拍攝晶圓之本發明之具有拍攝機構(第1拍攝機構)之雷射加工裝置之概略構成圖。Embodiments of the present invention will be described in detail below with reference to the drawings. Fig. 1 is a schematic block diagram showing a laser processing apparatus having a photographing mechanism (first photographing means) of the present invention in which a wafer is photographed under a chuck table (holding stage).
雷射加工裝置2包含裝載於靜止基台4且可在X軸方向上移動之第1滑動塊6。第1滑動塊6藉由滾珠螺絲8及脈衝馬達10所構成之X軸傳送機構12,沿著一對導軌14在X軸方向上移動。The laser processing apparatus 2 includes a first slider 6 that is mounted on the stationary base 4 and movable in the X-axis direction. The first slider 6 is moved in the X-axis direction along the pair of guide rails 14 by the X-axis transmission mechanism 12 including the ball screw 8 and the pulse motor 10.
第1滑動塊6裝載有可朝Y軸方向移動之支持匣16。支持匣16藉由滾珠螺絲18及脈衝雷射20所構成之Y軸傳送機構(變位傳送機構)22,沿著一對導軌24在Y軸方向上移動。The first slider 6 is loaded with a support weir 16 that is movable in the Y-axis direction. The support cymbal 16 is moved in the Y-axis direction along the pair of guide rails 24 by a Y-axis transfer mechanism (displacement transfer mechanism) 22 composed of a ball screw 18 and a pulsed laser 20.
支持匣16上裝載有可旋轉之夾頭台28。第2圖清楚顯示出,支持匣16係形成大略U形,且包含有:上板16a;裝載於導軌24上之下板16b;及連結上板16a與下板16b之連結板16c。上板16a形成有可供夾頭台28之後述之嵌合突部旋轉地安裝之圓形開口17。The support cymbal 16 is loaded with a rotatable chuck base 28. Fig. 2 clearly shows that the support cymbal 16 is formed in a substantially U shape and includes: an upper plate 16a; a lower plate 16b mounted on the guide rail 24; and a coupling plate 16c connecting the upper plate 16a and the lower plate 16b. The upper plate 16a is formed with a circular opening 17 to which the fitting projections to be described later of the chuck table 28 are rotatably attached.
夾頭台28具有:環狀支持構件62、及保持墊74。環狀支持構件62具有:嵌合凸部64、比嵌合凸部64大徑之帶捲繞部66、及與嵌合凸部64之徑大略相同之環狀收納部68。The chuck table 28 has an annular support member 62 and a holding pad 74. The annular support member 62 has a fitting convex portion 64, a tape winding portion 66 having a larger diameter than the fitting convex portion 64, and an annular receiving portion 68 which is substantially the same as the diameter of the fitting convex portion 64.
環狀收納部68具有與保持墊74之外形大略相同之內徑68a(參考第4圖),且於環狀收容部68之內側底部形成有可支持保持墊74之環狀支持部70。The annular housing portion 68 has an inner diameter 68a (refer to FIG. 4) that is substantially the same as the outer shape of the holding pad 74, and an annular support portion 70 that supports the holding pad 74 is formed at the inner bottom portion of the annular housing portion 68.
保持墊74由石英玻璃、硼矽酸玻璃、藍寶石、氟化鈣、氟化鋰、氟化鎂等透明物質所形成,且具有在朝表面(保持面74a)開口之多數細孔76。The holding pad 74 is formed of a transparent material such as quartz glass, borosilicate glass, sapphire, calcium fluoride, lithium fluoride, or magnesium fluoride, and has a plurality of fine pores 76 that open toward the surface (holding surface 74a).
參照第4圖可知,各細孔76連通於吸引溝78,且環狀支持構件62之環狀支持部70形成有與保持墊74之吸引溝78連通之連通路72。連通路72連接於真空吸引源80。Referring to Fig. 4, each of the fine holes 76 communicates with the suction groove 78, and the annular support portion 70 of the annular support member 62 is formed with a communication passage 72 that communicates with the suction groove 78 of the holding mat 74. The communication path 72 is connected to the vacuum suction source 80.
將保持墊74裝載於環狀支持構件62之環狀支持部70上,並且將環狀支持構件62之嵌合凸部64嵌合於支持匣16之圓形開口17中時,如第3圖所示,成為夾頭台28可旋轉地裝載於支持匣16之狀態。The holding pad 74 is mounted on the annular support portion 70 of the annular support member 62, and when the fitting convex portion 64 of the annular support member 62 is fitted into the circular opening 17 of the support weir 16, as shown in FIG. As shown, the chuck table 28 is rotatably mounted on the support weir 16.
支持匣16之連結板16c安裝有馬達26,並且傳送帶30捲繞於連結於馬達26之輸出軸之皮帶27與環狀支持構件62之帶捲繞部66。當驅動馬達26時,夾頭台28透過帶30而旋轉。The motor 26 is attached to the web 16c supporting the crucible 16, and the belt 30 is wound around a belt winding portion 66 that is coupled to the belt 27 of the output shaft of the motor 26 and the annular support member 62. When the motor 26 is driven, the chuck table 28 is rotated through the belt 30.
馬達26係由例如脈衝馬達所構成,在進行調準時,當馬達26以預定脈衝驅動時,夾頭台28會旋轉預定量(θ旋轉),可進行第6圖所示之晶圓1之分割預定線(溝道)3之調準。The motor 26 is constituted by, for example, a pulse motor. When the motor 26 is driven by a predetermined pulse, the chuck table 28 is rotated by a predetermined amount (θ rotation), and the wafer 1 can be divided as shown in FIG. The alignment of the predetermined line (channel) 3 is made.
支持匣16之上板16a形成有複數(本實施型態為4個)之框架支持台29,並以該等框架支持台29支持於後說明之環狀框架。The support 匣16 upper plate 16a is formed with a plurality of frame support tables 29 (four in the present embodiment), and these frame support tables 29 are supported by the annular frame described later.
再次參照第1圖,由X軸傳送機構12及Y軸傳送機構22構成加工傳送機構23。藉此,夾頭台28藉由加工傳送機構23可朝X軸方向及Y軸方向移動。Referring again to Fig. 1, the X-axis transfer mechanism 12 and the Y-axis transfer mechanism 22 constitute a process transfer mechanism 23. Thereby, the chuck table 28 can be moved in the X-axis direction and the Y-axis direction by the machining conveyance mechanism 23.
靜止基台4上豎立設置有柱體32,該柱體32安裝有收容了雷射光束發射機構34之殼體35。由雷射光束發射機構34所發射之雷射光束係藉由安裝於殼體35之前端之聚光器(雷射照射頭)36之對物鏡而聚光,然後照射在保持於夾頭台28之半導體晶圓等之被加工物(工作件)。A column 32 is erected on the stationary base 4, and the column 32 is mounted with a housing 35 that houses the laser beam emitting mechanism 34. The laser beam emitted by the laser beam emitting mechanism 34 is condensed by the objective lens mounted to the concentrator (laser head) 36 at the front end of the casing 35, and then irradiated on the chuck table 28 A workpiece (work piece) such as a semiconductor wafer.
殼體35之前端部配設有與聚光器36整齊排列於X軸方向且藉由雷射光束檢測出應雷射加工之加工領域之第2拍攝機構38。第2拍攝機構38除了藉由可視光進行拍攝之一般CCD等拍攝元件之外,還包含有將紅外線照射到工作件之紅外線照射機構;探測由紅外線照射機構所照射之紅外線之光學系統;及用以輸出對應於由該光學系統所探測到之紅外線之電信號之紅外線CCD等之拍攝構件所構成之紅外線拍攝機構,拍攝之影像則發送到控制器40。A second imaging mechanism 38 that is aligned with the concentrator 36 in the X-axis direction and detects a laser processing field by laser beam is disposed at the front end of the casing 35. The second imaging unit 38 includes, in addition to an imaging element such as a general CCD that is imaged by visible light, an infrared irradiation unit that irradiates infrared rays to the workpiece, and an optical system that detects infrared rays that are irradiated by the infrared irradiation unit; The captured image is transmitted to the controller 40 by an infrared imaging mechanism including an imaging member such as an infrared CCD that outputs an electrical signal of infrared rays detected by the optical system.
控制器40係由電腦所構成,且具有:藉由控制程式進行運算處理之中央處理裝置(CPU)42;用以儲存控制程式之唯讀記憶體(ROM)46、計算器48、輸入介面50、及輸出介面52。The controller 40 is composed of a computer and has a central processing unit (CPU) 42 for performing arithmetic processing by a control program, a read only memory (ROM) 46 for storing a control program, a calculator 48, and an input interface 50. And the output interface 52.
56係加工傳送量檢測機構,由沿著導軌14配設之線性刻度54、及配設於第2滑動塊16且未圖示之讀取頭所構成,且加工傳送量檢測機構60之檢測信號輸入至控制器40之輸入介面50。The 56-series processing conveyance amount detecting means is constituted by a linear scale 54 disposed along the guide rail 14 and a reading head (not shown) disposed in the second slider 16, and the detection signal of the processing conveyance amount detecting means 60 is processed. Input to input interface 50 of controller 40.
60係變位傳送量檢測機構,由沿著導軌24配設之線性刻度58;及配設於第2滑動塊16且未圖示之讀取頭所構成,且變位傳送量檢測機構60之檢測信號輸入至控制器40之輸入介面50。The 60-series displacement conveyance detecting means is constituted by a linear scale 58 disposed along the guide rail 24, and a reading head (not shown) disposed in the second slide block 16, and the displacement conveyance amount detecting mechanism 60 The detection signal is input to the input interface 50 of the controller 40.
第2拍攝機構38所拍攝之影像信號輸入至控制器40之輸入介面50。另一方面,由控制器50之輸出介面52將控制信號輸出至脈衝馬達10、脈衝馬達20、及雷射光束發射機構34等。The image signal captured by the second imaging unit 38 is input to the input interface 50 of the controller 40. On the other hand, the control signal is output from the output interface 52 of the controller 50 to the pulse motor 10, the pulse motor 20, the laser beam emitting mechanism 34, and the like.
雷射加工裝置2之基座4之預定處安裝有拍攝機構(第1拍攝機構)82,該拍攝機構係由透明保持墊74之下側拍攝保持於夾頭台28之半導體晶圓等的被加工物。At a predetermined position of the susceptor 4 of the laser processing apparatus 2, a photographing mechanism (first photographing means) 82 for photographing and holding a semiconductor wafer or the like held by the chuck table 28 from the lower side of the transparent holding pad 74 is attached. Processed material.
如第5圖所示,拍攝機構82包含具有低倍率相機86及高倍率相機88之相機單元84。相機單元84之側面安裝有使用相機單元84拍攝時照明拍攝處之2個照明裝置90、92。As shown in FIG. 5, the photographing mechanism 82 includes a camera unit 84 having a low magnification camera 86 and a high magnification camera 88. Mounted on the side of the camera unit 84 are two illumination devices 90, 92 that are illuminated at the time of shooting using the camera unit 84.
相機單元84係由支持板94所支持,且支持板94之基端部固定於Z軸移動塊98。柱體96豎立設置於雷射加工裝置2之基座4,藉由滾珠螺絲100及脈衝馬達102所構成之Z軸移動機構104,構成拍攝機構82之相機單元84可沿著一對導軌106而在Z軸方向(上下方向)上移動。The camera unit 84 is supported by the support plate 94, and the base end portion of the support plate 94 is fixed to the Z-axis moving block 98. The column body 96 is erected on the base 4 of the laser processing apparatus 2, and the camera unit 84 constituting the photographing mechanism 82 can be along the pair of guide rails 106 by the Z-axis moving mechanism 104 constituted by the ball screw 100 and the pulse motor 102. Move in the Z-axis direction (up and down direction).
參照第6圖,其係顯示雷射加工裝置2之加工對象之半導體晶圓1的表面側立體圖。晶圓1之表面1a在由形成格子狀之溝道(分割預定線)所分隔出之各領域形成有元件5。各元件5形成有在調準時為檢測對象之目標圖案7。Referring to Fig. 6, there is shown a front side perspective view of the semiconductor wafer 1 to be processed by the laser processing apparatus 2. The surface 1a of the wafer 1 is formed with elements 5 in various fields separated by a lattice-shaped channel (divided line). Each element 5 is formed with a target pattern 7 which is a detection target at the time of alignment.
第1圖所示之雷射加工裝置進行加工時,係令晶圓1之表面1a側朝下,貼附於切割膠帶(黏著膠帶)T,並且切割膠帶T之外周部係如第7圖所示般貼附於環狀框F。因此,令半導體晶圓1之裏面1b朝上,且在第7圖之狀態下裝載於夾頭台28上。When the laser processing apparatus shown in Fig. 1 is processed, the surface 1a of the wafer 1 is directed downward, and is attached to a dicing tape (adhesive tape) T, and the outer periphery of the dicing tape T is as shown in Fig. 7. Attached to the ring frame F as shown. Therefore, the inside 1b of the semiconductor wafer 1 is made upward, and is loaded on the chuck table 28 in the state of Fig. 7.
參照第8圖,其係顯示藉由分割膠帶T裝載於環狀框架F之其他種類之半導體晶圓1A之裏面側立體圖。半導體晶圓1A之裏面形成有金屬層9。因此,此種半導體晶圓1A之目標圖案7之拍攝係即使第2拍攝機構38含有IR相機也不可能的。Referring to Fig. 8, there is shown a rear side perspective view of another type of semiconductor wafer 1A mounted on the ring frame F by the dividing tape T. A metal layer 9 is formed inside the semiconductor wafer 1A. Therefore, the imaging of the target pattern 7 of the semiconductor wafer 1A is impossible even if the second imaging mechanism 38 includes an IR camera.
可是,由於第1拍攝機構82係配設於夾頭台28之較下側,且透過夾頭台28之透明保持墊74而拍攝半導體晶圓1A,因此即使是裏面具有金屬層9之半導體晶圓1A,亦可輕易拍攝目標圖案7。However, since the first imaging unit 82 is disposed on the lower side of the chuck table 28 and passes through the transparent holding pad 74 of the chuck table 28 to image the semiconductor wafer 1A, even the semiconductor crystal having the metal layer 9 therein is formed. With a circle of 1A, the target pattern 7 can also be easily photographed.
本發明之作為加工裝置之加工對象的被加工物(工作件)並不限定於如第6~8圖所示之半導體晶圓等者,可舉例如作為晶片安裝用之設置於晶圓裏面之DAF(die attach film)等之黏著構件,或者半導體製品之外殼、陶瓷、玻璃系或二氧化矽系之基板、各種電子零件、各種驅動裝置、進而要求微米級精確度之各種加工材料。The workpiece (workpiece) to be processed by the processing apparatus of the present invention is not limited to the semiconductor wafer shown in FIGS. 6 to 8, and may be, for example, mounted on the wafer for wafer mounting. Adhesive members such as DAF (die attach film), or semiconductor case, ceramic, glass or cerium oxide substrate, various electronic parts, various driving devices, and various processing materials requiring micron-level precision.
參照第9圖,其係顯示支持匣及夾頭台部分之部分截面側面圖。由於支持匣16係呈大略U形,因此在用以連結上板16a與下板16b之連結板16c之相反側分隔出拍攝機構進入開口部19。該圖中,概略地顯示加工傳送機構23。Referring to Fig. 9, a partial cross-sectional side view showing the support cymbal and the chuck stage portion is shown. Since the support cymbal 16 has a substantially U-shape, the imaging mechanism enters the opening 19 on the side opposite to the coupling plate 16c for connecting the upper plate 16a and the lower plate 16b. In the figure, the processing transport mechanism 23 is schematically shown.
第10圖係第9圖之A部分之放大部分截面圖,令半導體晶圓1之其表面1a為下側,貼附於切割膠帶T,並且環狀框架F載置於框架載置台29上。Fig. 10 is an enlarged partial cross-sectional view of a portion A of Fig. 9, in which the surface 1a of the semiconductor wafer 1 is on the lower side, attached to the dicing tape T, and the annular frame F is placed on the frame stage 29.
如上所述,夾頭台28之保持墊74係由玻璃等之透明物質形成,且具有複數吸引溝78。吸引溝78透過形成於環狀支持構件62之連通路72而連接於真空吸引源(參考第4圖)。As described above, the holding pad 74 of the chuck table 28 is formed of a transparent material such as glass and has a plurality of suction grooves 78. The suction groove 78 is connected to the vacuum suction source through the communication path 72 formed in the annular support member 62 (refer to FIG. 4).
如第11圖所示,保持墊74具有:形成有細孔或吸引溝等複數吸引路之形成吸引路領域74a;未形成有吸引路之十字形的未形成吸引路領域74b、及未形成有吸引路之外周領域74c。第1拍攝機構82之目標圖案之拍攝宜通過未形成吸引路領域74b,以確切地捕捉到目標圖案。As shown in Fig. 11, the holding mat 74 has a suction path region 74a in which a plurality of suction paths such as pores or suction grooves are formed, a cross-shaped suction channel region 74b in which a suction path is not formed, and an unformed suction path region 74b. Attracting the road outside the field 74c. The photographing of the target pattern of the first photographing mechanism 82 is preferably performed by not forming the attracting path region 74b to accurately capture the target pattern.
參照第12圖,其顯示了其他實施型態之保持墊74A之縱截面圖。保持墊74A係由玻璃等之透明物質所形成,且具有複數之橫向吸引溝75以及與橫向吸引溝75垂直之複數縱向吸引溝77。79為連接於連通路72之吸引溝。Referring to Fig. 12, there is shown a longitudinal sectional view of a holding pad 74A of another embodiment. The holding pad 74A is formed of a transparent material such as glass, and has a plurality of lateral suction grooves 75 and a plurality of longitudinal suction grooves 77 perpendicular to the lateral suction grooves 75. 79 is a suction groove connected to the communication path 72.
以下,說明使用第1拍攝機構82之調準作業。如第9圖所示,於框架載置台29上載置環狀框架F,並使真空吸引源80作動,藉由夾頭台28之保持墊74而吸引保持半導體晶圓1。Hereinafter, the alignment operation using the first imaging mechanism 82 will be described. As shown in FIG. 9, the annular frame F is placed on the frame mounting table 29, and the vacuum suction source 80 is actuated, and the semiconductor wafer 1 is sucked and held by the holding mat 74 of the chuck table 28.
在該狀態下,驅動X軸傳送機構12及Y軸傳送機構22,且如第9圖所示,使第1拍攝機構82通過拍攝機構進入開口部19進入支持匣16內,並且使第1拍攝機構82定位於半導體晶圓1之正下方。In this state, the X-axis transmission mechanism 12 and the Y-axis transmission mechanism 22 are driven, and as shown in FIG. 9, the first imaging mechanism 82 is caused to enter the opening portion 19 through the imaging mechanism, and enters the support cymbal 16, and the first imaging is performed. The mechanism 82 is positioned directly below the semiconductor wafer 1.
第1拍攝機構82使用於用以檢測應切削加工之溝道之調準時之圖案比對的影像必須在切削加工前先取得。因此,當第1拍攝機構82定位於保持於夾頭台28之半導體晶圓1之正下方時,照明裝置90或92會亮燈,由下照明半導體晶圓1,並且使用低倍率相機86或高倍率相機88透過透明保持墊74來拍攝半導體晶圓1之表面,並使拍攝到之影像顯示於未圖示LCD等的顯示器。The image used by the first imaging mechanism 82 for detecting the alignment of the channel to be processed must be obtained before the cutting process. Therefore, when the first photographing mechanism 82 is positioned directly under the semiconductor wafer 1 held by the chuck table 28, the illumination device 90 or 92 lights up, the semiconductor wafer 1 is illuminated by the lower surface, and the low magnification camera 86 or The high-magnification camera 88 images the surface of the semiconductor wafer 1 through the transparent holding pad 74, and causes the captured image to be displayed on a display such as an LCD (not shown).
雷射加工裝置2之操作者藉由操作未圖示之操作面板,驅動X軸傳送機構12或Y軸傳送機構22,探索成為圖案比對之目標之目標圖案7。The operator of the laser processing apparatus 2 drives the X-axis transfer mechanism 12 or the Y-axis transfer mechanism 22 by operating an operation panel (not shown) to search for the target pattern 7 to be the target of the pattern alignment.
當操作者決定目標圖案7時,包含該目標圖案之影像記錄於設置在雷射加工裝置2之控制器40之RAM46。又,藉由座標值等求得該目標圖案7與溝道3之中心線的距離,並將該值也先記憶於RAM46。又,藉由座標值等求得相鄰之溝道與溝道之間的間隔(溝道間距),關於溝道間距之值亦先記憶於控制器40之RAM46。When the operator determines the target pattern 7, the image including the target pattern is recorded in the RAM 46 provided to the controller 40 of the laser processing apparatus 2. Further, the distance between the target pattern 7 and the center line of the channel 3 is obtained by the coordinate value or the like, and the value is also first stored in the RAM 46. Further, the interval between the adjacent channels and the channel (channel pitch) is obtained by the coordinate value or the like, and the value of the channel pitch is also first stored in the RAM 46 of the controller 40.
在沿著半導體晶圓1之溝道3切斷時,實施已記憶之目標圖案之影像與實際藉由第1拍攝機構82所拍攝而取得之影像的圖案比對。該圖案比對在朝X軸方向延伸之相同溝道3且互相間隔之A點與B點二點實施。When the channel 3 is cut along the semiconductor wafer 1, the image of the recorded target pattern is compared with the pattern of the image actually captured by the first imaging unit 82. This pattern is aligned at two points A and B which are spaced apart from each other in the X-axis direction and are spaced apart from each other.
當在A點之圖案比對結束時,使夾頭台28朝X軸方向移動,且進行A點與遠離X軸方向之B點的圖案比對。此時,並非是由A點一口氣移動到B點來進行圖案比對,而是在往B點移動之途中之複數處視需要實施圖案比對,然後驅動應修正Y軸方向之偏離之馬達26,使夾頭台28稍微旋轉而進行θ補正,最後實施在B點之圖案比對。When the pattern alignment at point A ends, the chuck table 28 is moved in the X-axis direction, and the pattern of the point A is shifted from the point B away from the X-axis direction. At this time, instead of moving the pattern from point A to point B for pattern comparison, the pattern comparison is performed at a plurality of points on the way to point B, and then the motor that should correct the deviation in the Y-axis direction is driven. 26, the chuck table 28 is slightly rotated to perform θ correction, and finally the pattern alignment at point B is performed.
當在A點及B點的圖案比對結束時,連結二個目標圖案7的直線變成與溝道3平行,並且使夾頭台28朝Y軸方向移動僅目標圖案7與溝道3之中心線的距離份,藉此進行預切削之溝道3與聚光器(雷射照射頭)36之對位,結束調準。When the pattern alignment at points A and B ends, the straight line connecting the two target patterns 7 becomes parallel to the channel 3, and the chuck table 28 is moved in the Y-axis direction only the center of the target pattern 7 and the channel 3. The distance of the line is divided by the pre-cutting of the channel 3 and the concentrator (laser irradiation head) 36 to complete the alignment.
使第1拍攝機構82進入支持匣16內時,為了防止第1拍攝機構82接觸到支持匣16之連結板16c,宜在連結板16c之內面貼附如東京感測器股份有限公司製造之膠帶開關。該膠帶開關係構成藉由導通檢測接觸之接觸防止機構。When the first imaging unit 82 is inserted into the support 匣16, in order to prevent the first imaging unit 82 from coming into contact with the connecting plate 16c of the support cymbal 16, it is preferable to attach a surface of the connecting plate 16c to the inner surface of the connecting plate 16c, for example, manufactured by Tokyo Sensor Co., Ltd. Tape switch. The tape opening relationship constitutes a contact preventing mechanism for detecting contact by conduction.
本發明之加工裝置並不限定於第1圖所示之雷射加工裝置2,本發明之第1拍攝機構82亦可適用於如第13圖所示之切削裝置(切割裝置)110。The processing apparatus of the present invention is not limited to the laser processing apparatus 2 shown in Fig. 1, and the first imaging unit 82 of the present invention can also be applied to the cutting apparatus (cutting apparatus) 110 as shown in Fig. 13.
垂直柱體112豎立設置於切削裝置110之基座4,切削單元(切削機構)114裝載於該垂直柱體112且可朝Z軸方向移動。即,切削單元114之殼體116藉由滾珠螺絲120及脈衝馬達112所構成之Z軸傳送機構124而沿著一對導軌126朝Z軸方向移動。The vertical cylinder 112 is erected on the base 4 of the cutting device 110, and the cutting unit (cutting mechanism) 114 is mounted on the vertical cylinder 112 and movable in the Z-axis direction. That is, the casing 116 of the cutting unit 114 moves in the Z-axis direction along the pair of guide rails 126 by the Z-axis transmission mechanism 124 constituted by the ball screw 120 and the pulse motor 112.
殼體116中收容有未圖示之旋轉軸及驅動旋轉軸旋轉之馬達,且於旋轉軸之前端安裝有可裝卸之切削刀片118。A housing (not shown) and a motor for rotating the rotary shaft are housed in the housing 116, and a detachable cutting insert 118 is attached to the front end of the rotary shaft.
本實施型態之其他構成與第1圖所示之雷射加工裝置2相同,因此省略其說明。The other configuration of this embodiment is the same as that of the laser processing apparatus 2 shown in Fig. 1, and therefore the description thereof will be omitted.
1...半導體晶圓1. . . Semiconductor wafer
1A...半導體晶圓1A. . . Semiconductor wafer
1a...表面1a. . . surface
1b...裏面1b. . . inside
2...雷射加工裝置2. . . Laser processing device
4...靜止基台4. . . Stationary abutment
5...元件5. . . element
6...第1滑動塊6. . . First sliding block
7...目標圖案7. . . Target pattern
8...滾珠螺絲8. . . Ball screw
10...脈衝馬達10. . . Pulse motor
12...X軸傳送機構12. . . X-axis transmission mechanism
14...Y軸傳送機構14. . . Y-axis transmission mechanism
16...支持匣16. . . Support 匣
16a...上板16a. . . On board
16b...下板16b. . . Lower plate
16c...連結板16c. . . Link board
17...圓形開口17. . . Round opening
18...滾珠螺絲18. . . Ball screw
19...拍攝機構進入開口部19. . . The shooting mechanism enters the opening
20...脈衝馬達20. . . Pulse motor
22...Y軸傳送機構twenty two. . . Y-axis transmission mechanism
23...加工傳送機構twenty three. . . Processing conveyor
24...導軌twenty four. . . guide
26...馬達26. . . motor
28...夾頭台28. . . Chuck table
29...框架支持台29. . . Frame support
30...帶30. . . band
32...柱體32. . . Cylinder
34...雷射光束發射機構34. . . Laser beam emitting mechanism
35...殼體35. . . case
36...聚光器36. . . Concentrator
38...第2拍攝機構38. . . Second shooting mechanism
40...控制器40. . . Controller
42...中央處理裝置42. . . Central processing unit
44...唯讀記憶體44. . . Read only memory
46...隨機存取記憶體46. . . Random access memory
48...計算器48. . . Calculator
50...輸入介面50. . . Input interface
52...輸出介面52. . . Output interface
54...線性刻度54. . . Linear scale
56...加工傳送量檢測機構56. . . Processing transfer amount detecting mechanism
58...線性刻度58. . . Linear scale
60...變位傳送量檢測機構60. . . Displacement transmission amount detecting mechanism
62...環狀支持構件62. . . Annular support member
64...嵌合凸部64. . . Fitting convex
66...捲繞部66. . . Winding section
68...環狀收容部68. . . Ring housing
68a...內徑68a. . . the inside diameter of
70...環狀支持部70. . . Ring support
72...連通路72. . . Connected road
74...保持墊74. . . Hold pad
74A...保持墊74A. . . Hold pad
74a...保持墊表面,形成吸引路領域74a. . . Keep the surface of the pad to form a field of attraction
74b...未形成吸引路領域74b. . . No attraction road
74c...外周領域74c. . . Peripheral field
75...橫向吸引溝75. . . Horizontal attraction ditch
76...細孔76. . . Fine hole
77...縱向吸引溝77. . . Longitudinal attraction
78...吸引孔78. . . Attraction hole
79...吸引溝79. . . Attracting ditch
80...真空吸引源80. . . Vacuum suction source
82...拍攝機構82. . . Shooting agency
84...相機單元84. . . Camera unit
86...低倍率相機86. . . Low magnification camera
88...高倍率相機88. . . High magnification camera
90,92...照明裝置90,92. . . Lighting device
94...支持板94. . . Support board
96...柱體96. . . Cylinder
98...Z軸移動塊98. . . Z-axis moving block
100...滾珠螺絲100. . . Ball screw
102...脈衝馬達102. . . Pulse motor
104...Z軸移動機構104. . . Z-axis moving mechanism
106...導軌106. . . guide
110...切削刀片110. . . Cutting insert
112...垂直柱體112. . . Vertical cylinder
114...切削單元(切削機構)114. . . Cutting unit (cutting mechanism)
116...殼體116. . . case
118...切削刀片118. . . Cutting insert
120...滾珠螺絲120. . . Ball screw
122...脈衝馬達122. . . Pulse motor
124...X軸傳送機構124. . . X-axis transmission mechanism
126...導軌126. . . guide
F...環狀框架F. . . Ring frame
T...切割膠帶T. . . Cutting tape
第1圖係本發明第1實施型態之雷射加工裝置之概略立體圖。Fig. 1 is a schematic perspective view of a laser processing apparatus according to a first embodiment of the present invention.
第2圖係支持匣及夾頭台部份之分解立體圖。Figure 2 is an exploded perspective view of the support and the chuck stage.
第3圖係裝載於支持匣上之夾頭台之立體圖。Figure 3 is a perspective view of a chuck table mounted on a support raft.
第4圖係夾頭台之分解立體圖。Figure 4 is an exploded perspective view of the chuck table.
第5圖係第1拍攝機構及其支持構造之立體圖。Fig. 5 is a perspective view of the first photographing mechanism and its supporting structure.
第6圖係半導體晶圓之表面側立體圖。Figure 6 is a perspective view of the surface side of the semiconductor wafer.
第7圖係透過切割膠帶而裝載於環狀框之半導體晶圓之裏面側立體圖。Fig. 7 is a perspective view showing the inside of a semiconductor wafer mounted on a ring frame by dicing tape.
第8圖係透過切割膠帶而裝載於環狀框且裏面具有金屬層之半導體晶圓之裏面側立體圖。Fig. 8 is a perspective view showing the inside of a semiconductor wafer having a metal layer mounted on a ring frame through a dicing tape.
第9圖係裝載於支持匣上之夾頭台之部分截面側面圖。Figure 9 is a partial cross-sectional side view of the chuck table loaded on the support raft.
第10圖係第9圖之A部分之部分截面放大圖。Fig. 10 is an enlarged cross-sectional view showing a portion of a portion A of Fig. 9.
第11圖係保持墊之平面圖。Figure 11 is a plan view of the retaining pad.
第12圖係保持墊之其他實施型態之縱截面圖。Figure 12 is a longitudinal cross-sectional view of another embodiment of the retaining pad.
第13圖係本發明第2實施型態之切削裝置之概略立體圖。Figure 13 is a schematic perspective view of a cutting device according to a second embodiment of the present invention.
2...雷射加工裝置2. . . Laser processing device
4...靜止基台4. . . Stationary abutment
6...第1滑動塊6. . . First sliding block
8...滾珠螺絲8. . . Ball screw
10...脈衝馬達10. . . Pulse motor
12...X軸傳送機構12. . . X-axis transmission mechanism
14...Y軸傳送機構14. . . Y-axis transmission mechanism
16...支持匣16. . . Support 匣
18...滾珠螺絲18. . . Ball screw
20...脈衝馬達20. . . Pulse motor
22...Y軸傳送機構twenty two. . . Y-axis transmission mechanism
23...加工傳送機構twenty three. . . Processing conveyor
24...導軌twenty four. . . guide
26...馬達26. . . motor
28...夾頭台28. . . Chuck table
30...帶30. . . band
32...柱體32. . . Cylinder
34...雷射光束發射機構34. . . Laser beam emitting mechanism
35...殼體35. . . case
36...聚光器36. . . Concentrator
38...第2拍攝機構38. . . Second shooting mechanism
40...控制器40. . . Controller
42...中央處理裝置42. . . Central processing unit
44...唯讀記憶體44. . . Read only memory
46...隨機存取記憶體46. . . Random access memory
48...計算機48. . . computer
50...輸入介面50. . . Input interface
52...輸出介面52. . . Output interface
54...線性刻度54. . . Linear scale
56...加工傳送量檢測機構56. . . Processing transfer amount detecting mechanism
58...線性刻度58. . . Linear scale
60...變位傳送量檢測機構60. . . Displacement transmission amount detecting mechanism
82...拍攝機構82. . . Shooting agency
Claims (6)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2008253220A JP5274966B2 (en) | 2008-09-30 | 2008-09-30 | Processing equipment |
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| TW201013828A TW201013828A (en) | 2010-04-01 |
| TWI464826B true TWI464826B (en) | 2014-12-11 |
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| TW098125195A TWI464826B (en) | 2008-09-30 | 2009-07-27 | Processing device (a) |
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| JP (1) | JP5274966B2 (en) |
| CN (1) | CN101714499B (en) |
| TW (1) | TWI464826B (en) |
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| JP5274966B2 (en) | 2013-08-28 |
| TW201013828A (en) | 2010-04-01 |
| CN101714499A (en) | 2010-05-26 |
| JP2010087141A (en) | 2010-04-15 |
| CN101714499B (en) | 2013-06-19 |
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