TWI463529B - An amorphous carbon film forming method and a film forming apparatus, and a method of manufacturing the semiconductor device using the film forming method, and a computer readable memory medium - Google Patents

Description

Film forming method and film forming apparatus for amorphous carbon film, manufacturing method of semiconductor device using the film forming method, and computer readable memory medium

The present invention relates to a film forming method of an amorphous carbon film which can be preferably used as a mask when manufacturing a semiconductor device, and a method of manufacturing a semiconductor device using the same.

In the process of a semiconductor device, in order to form a circuit pattern, a photoresist using a photolithography technique to form a pattern is used as a mask to perform plasma etching. In the era when the CD is 45 nm, the ArF resist is used as a mask for the microfabrication, but there is a problem that the resistance to plasma is weak. As a technique for overcoming this problem, a method of using a mask (multilayer resist) in which an SiO ₂ film and a resist having plasma resistance are laminated under an ArF resist, that is, a so-called dry development method, is also employed.

Here, in the era of miniaturization after 45 nm, the film thickness of the ArF resist is as thin as 200 nm, which is the basis for dry development. If the film thickness of the SiO ₂ film thickness of this investigation can be used to resist the plasma etching, the film thickness and the film thickness of the SiO ₂ can be used to perform plasma etching of the lower layer resist, the limit film thickness of which is 300nm. The layer resist under this film thickness does not ensure sufficient plasma resistance to the film thickness of the film to be etched, and high-accuracy etching cannot be achieved. Therefore, in place of such a lower resist film, a film having higher etching resistance is required.

However, Japanese Laid-Open Patent Publication No. 2002-12972 discloses a technique in which a substitute for a SiO ₂ film used in a multilayer resist or as an antireflection layer is applied to a hydrocarbon gas and an inert gas. An amorphous carbon film deposited by CVD. Therefore, it is reviewed that such an amorphous carbon film is applied to the above applications.

In Japanese Laid-Open Patent Publication No. 2002-12972, the film formation temperature of the amorphous carbon film is described as 100 to 500 °C. However, when the amorphous carbon film formed at such a temperature is applied to the above use, it is found that the etching resistance is not sufficient. Then, according to the technique of Japanese Laid-Open Patent Publication No. 2002-12972, in order to obtain an amorphous carbon film having sufficient etching resistance for the above use, a high temperature of approximately 600 ° C is required. However, such a high temperature does not apply to a copper back wiring (Back End) process.

The present invention focuses on the above problems and is a researcher for effective solution. An object of the present invention is to provide a method for forming an amorphous carbon film which is high in plasma resistance and can be formed at a low temperature, and a method for producing a semiconductor device which is suitable for a film forming method of such an amorphous carbon film.

The present invention relates to a method for forming an amorphous carbon film, comprising: a process of disposing a substrate in a processing container; and a process of supplying a processing gas containing carbon and hydrogen and oxygen into the processing container; The process of heating the substrate in the processing container to decompose the processing gas and depositing an amorphous carbon film on the substrate.

According to the present invention, since oxygen is contained in addition to carbon and hydrogen Since the gas is processed, the reactivity at the time of film formation is high, and a strong carbon network can be formed even at a relatively low temperature, and an amorphous carbon film having high etching resistance can be formed. Further, the amorphous carbon film formed by this method is used as an etching mask to etch the etching target film, whereby a favorable etching shape having a high selectivity to the substrate can be obtained. In particular, in place of the underlying resist film in the prior multilayer resist, the amorphous carbon film formed by the method of the present invention can provide a better etching of the etching target film, thereby providing greater advantages in the manufacture of the semiconductor device. .

The number of atoms of carbon and oxygen in the treatment gas is preferably 3:1 to 5:1. Further, the number of atoms of carbon and hydrogen in the treatment gas is preferably 1:1 to 1:2 than carbon: hydrogen.

Further, the above-mentioned processing gas containing carbon, hydrogen and oxygen is preferably a mixed gas of a hydrocarbon gas and an oxygen-containing gas. At this time, for example, at least one of the above-described carbonized hydrogen systems C ₂ H ₂ , C ₄ H ₆ and C ₆ H ₆ is used.

Alternatively, the above-mentioned processing gas containing carbon and hydrogen and oxygen is preferably a gas having carbon and hydrogen and oxygen in the molecule. In this case, for example, the above gas having carbon and hydrogen and oxygen in the molecule is at least one of C ₄ H ₄ O and C ₄ H ₈ O.

Further, in the process of depositing an amorphous carbon film on a substrate, the substrate temperature is preferably 400 ° C or lower.

Further, in the process of depositing an amorphous carbon film on a substrate, it is preferred that the processing gas system be plasma-formed.

Moreover, the present invention provides a method of manufacturing a semiconductor device, comprising: a process of forming an etching target film on a substrate; and the etching pair a film-forming process for forming an amorphous carbon film according to any of the above features; and a process of forming an etching pattern on the amorphous carbon film; and etching the amorphous carbon film as an etching film The mask is used to etch the above-mentioned etching target film to form a specific structure.

Moreover, the present invention provides a method of manufacturing a semiconductor device, comprising: forming a film to be etched on a substrate; and forming a film on the film to be etched according to the method of any one of the above features. Engineering of a carbon film; and a process of forming a lanthanoid film on the amorphous carbon film; and a process of forming a photoresist film on the lanthanide film; and a process of patterning the photoresist film; and The photoresist film is used as an etching mask to etch the lanthanide film; and the lanthanum film is used as a mask to etch the amorphous carbon film, and the photoresist is transferred. The process of patterning the film; and the process of etching the film to be etched by using the amorphous carbon film as a mask.

Furthermore, the present invention is a computer readable memory medium that memorizes a software that executes a control program on a computer; and the feature is that the control program is executed in a manner that performs the method of any of the above features. To control the film forming device.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

Fig. 1 is a schematic cross-sectional view showing an example of a film forming apparatus which can be applied to a film forming method of an amorphous carbon film according to an embodiment of the present invention. Film formation The apparatus 100 has a processing chamber 1 having a substantially cylindrical shape.

A susceptor 2 for supporting the workpiece W, that is, the wafer W, is horizontally disposed inside the processing chamber 1. The susceptor 2 is supported by a cylindrical support member 3 provided below the central portion thereof. A guide ring 4 for guiding the wafer W is provided at the outer portion of the susceptor 2. Further, the heater 5 is embedded in the susceptor 2. The heater 5 heats the substrate to be processed, that is, the wafer W, to a specific temperature by supplying power from the heater power source 6. A thermocouple 7 is buried in the susceptor 2. The output of the heater 5 is controlled by the detection signal of the thermocouple 7. In the vicinity of the surface of the susceptor 2, an electrode 8 is buried, which is grounded. Further, in the susceptor 2, three wafer support pins (not shown) for supporting the wafer W to be lifted and lowered are provided so as to be protruded from the surface of the susceptor 2.

The shower head 10 is provided in the ceiling wall 1a of the processing chamber 1 via the insulating member 9. The shower head 10 has a cylindrical shape, and has a gas diffusion space 20 therein, a gas introduction port 11 for introducing a processing gas thereon, and a plurality of gas discharge ports 12 on the lower surface. The gas introduction port 11 of the shower head 10 is connected to a gas supply mechanism 14 that supplies a processing gas for forming an amorphous carbon film via a gas pipe 13.

The high frequency power source 16 is connected to the shower head 10 via the matching unit 15. Thereby, high frequency power is supplied from the high frequency power source 16 to the shower head 10. By supplying high-frequency power from the high-frequency power source 16, the processing gas supplied into the processing chamber 1 via the shower head 10 can be plasma-plasmaized.

An exhaust pipe 17 is connected to the bottom wall 1b of the processing chamber 1. The exhaust pipe 17 is connected to an exhaust device 18 including a vacuum pump. Then by venting By setting 18, the inside of the processing chamber 1 can be decompressed to a specific degree of vacuum. On the side wall of the processing chamber 1, a loading/unloading port 21 for loading and unloading the wafer W and a gate valve 22 for opening and closing the loading/unloading port 21 are provided.

The structure of the film forming apparatus 100, for example, the heater power source 6, the gas supply mechanism 14, the high-frequency power source 16, the exhaust device 18, and the like, is connected to the processing controller 30 including the CPU and its peripheral circuits. Then, the structural portion of the film forming apparatus 100 is controlled by the processing controller 30.

Further, the processing controller 30 is connected to a user interface 31 which is provided with a keyboard for managing the command input operation of the film forming apparatus 100 or the like, or a display for visually displaying the operation state of the film forming apparatus 100. And so on. Further, in the processing controller 30, a memory unit 32 is incorporated, which accommodates a control program for realizing various processes executed in the film forming apparatus 100 under the control of the process controller 30, or in order to cope with processing conditions. A program for executing processing of each of the structural sections of the film forming apparatus 100, that is, a recipe.

The manufacturing method may be stored in a hard disk or a semiconductor memory, or may be provided in a specific position of the memory unit 32 in a state of being housed in a removable memory medium such as a CDROM or a DVD. Further, the manufacturing method can be appropriately transmitted from another device via, for example, a dedicated line. Then, if necessary, the arbitrary method is called from the memory unit 32 by an instruction from the user interface 31, etc., and the processing controller 30 executes the desired processing in the film forming apparatus 100 under the control of the processing controller 30. deal with.

Next, an embodiment of a film forming method using an amorphous carbon film which is performed by the film forming apparatus 100 configured as described above will be described.

First, the wafer W is carried into the processing chamber 1 and placed on the susceptor 2. Then, for example, argon gas is supplied from the gas supply unit 14 through the gas pipe 13 and the shower head 10 to generate a gas as a plasma, and the inside of the processing chamber 1 is exhausted by the exhaust device 18 to maintain the inside of the processing chamber 1. In a specific decompression state. Further, the susceptor 2 is heated by the heater 5 to a specific temperature of 400 ° C or lower. Then, high-frequency power is applied from the high-frequency power source 16 to the shower head 10, whereby a high-frequency electric field is generated between the shower head 10 and the electrode 8, and the plasma gas is plasma-generated.

In this state, the gas supply means 14 introduces a processing gas containing carbon, hydrogen, and oxygen for forming an amorphous carbon film into the processing chamber 1 through the gas pipe 13 and the shower head 10.

Thereby, the processing gas is excited by the plasma formed in the processing chamber 1, and is heated and decomposed on the wafer W. Then, an amorphous carbon film having a solid network structure is deposited on the surface of the wafer W.

In the technique described in the above-mentioned patent document (JP-A-2002-12972), a processing gas for forming an amorphous carbon film is used as a hydrocarbon gas and an inert gas. However, according to the findings of the inventors, under such conditions, the network of carbon proceeds at a slower rate, and a low temperature of 400 ° C or less leaves a lot of structurally weaker portions, resulting in higher etching resistance. Low film. Here, if the film formation temperature is raised, a certain degree of structural strengthening can be achieved and the etching resistance can be improved, but it is difficult to apply it to the back end processing.

In contrast, in the present embodiment, in addition to carbon and hydrogen constituting the hydrocarbon gas, oxygen is introduced. The reactivity will be significantly improved, even at 400 ° C In the following low temperature, the film does not leave a weaker structure, and an amorphous carbon film having a strong carbon network can be obtained.

As a treatment gas containing carbon, hydrogen and oxygen, the number of atoms of carbon and oxygen in the treatment gas is preferably 3:1 to 5:1. If it is within this range, the reactivity can be desirably controlled to obtain a more desirable film.

Moreover, the number of atoms of carbon and hydrogen in the treatment gas is preferably 1:1 to 1:2 than carbon: hydrogen. A gas with less carbon than this does not exist as a practical compound. On the other hand, if hydrogen is more than this range, it is difficult to obtain a strong carbon network.

As the treatment gas containing carbon and hydrogen and oxygen, a mixed gas of a hydrocarbon gas and an oxygen-containing gas is typically exemplified. In this case, as the hydrocarbon gas, C ₃ H ₃ (acetylene), C ₄ H ₆ (butyne (including both 1-butyne and 2-butyne)), and C ₆ H ₆ (benzene) may be mentioned as appropriate. ), etc.; these may be used alone or in combination. Further, as the oxygen-containing gas, O ₂ gas can be suitably used. As other oxygen-containing gas, an ether compound such as CH ₃ -O-CH ₃ (dimethyl ether) can also be used.

As another example of the treatment gas containing carbon and hydrogen and oxygen, a gas having carbon and hydrogen and oxygen in the molecule can be mentioned. As such a gas, C ₄ H ₄ O (furan) or C ₄ H ₈ O (tetrahydrofuran) may be appropriately mentioned; these may be used singly or in combination.

As the processing gas, an inert gas such as argon may be contained in addition to a gas containing carbon and hydrogen and oxygen. When using a 300 mm wafer, the flow rate of argon gas is preferably about 20 to 100% for a gas containing carbon and hydrogen and oxygen. In addition, the flow rate of gas and inert gas containing carbon and hydrogen and oxygen, depending on the gas The type is different, but it is preferably about 250 to 350 mL/min (sccm). Further, the pressure in the treatment chamber at the time of film formation is preferably 6.65 Pa (50 mTorr) or less.

The wafer temperature (film formation temperature) at the time of film formation of the amorphous carbon film is preferably 400 ° C or less, and more preferably 100 to 300 ° C. The most ideal is about 200 ° C. As described above, if it is 400 ° C or less, it can be applied to the back end treatment of the copper-containing wiring. According to this embodiment, an amorphous carbon film having high etching resistance required for the lowermost layer of the multilayer resist can be obtained even at such a lower temperature.

The frequency and power of the high-frequency power applied to the shower head 10 may be appropriately set in accordance with the necessary reactivity. By applying the high-frequency electric power in this manner, a high-frequency electric field can be formed in the processing chamber 1, and the processing gas can be plasma-formed, whereby the amorphous carbon film under plasma CVD can be formed. Since the gas after the plasma formation is highly reactive, the film formation temperature can be further lowered. Further, the plasma source is not limited to such a capacitive coupling type under high-frequency power, and may be an inductively coupled plasma source, or a microwave may be introduced into the processing chamber 1 via a waveguide and an antenna to form a plasma. Also, plasma generation is not necessary. In the case where the reactivity is sufficient, film formation can also be performed by thermal CVD.

The amorphous carbon film formed as described above has a strong carbon network as described above, and has high etching resistance. Therefore, it is suitable as the lowermost layer of the multilayer resist. Further, since the amorphous carbon film formed as described above has a light absorption coefficient of about 0.1 to 1.0 at a wavelength of about 250 nm or less, it can also be suitably used as an antireflection film.

Next, a semiconductor package to which the amorphous carbon film produced above is applied will be described. The manufacturing method.

As shown in FIG. 2, on the semiconductor wafer (tantalum substrate) W, a tantalum carbide film 101, a tantalum carbon oxide film (Low-k film) 102, a tantalum carbide film 103, and a film are formed as an etching target film. A laminated film composed of the ceria film 104 and the tantalum nitride film 105 is formed thereon, and an amorphous carbon (α-C) film 106 is formed thereon by the above method. Then, a hafnium oxide film 107, a BARC (reflection preventing film) 108, and an ArF resist film 109 are sequentially formed thereon; and the ArF resist film 109 is further patterned by photolithography thereon. As described above, a multilayer etching mask is formed.

At this time, the thickness of the ArF resist film 109 is 200 nm or less, for example, 180 nm; the thickness of the BARC 108 is 30 to 100 nm, for example, 70 nm; the thickness of the ceria film 107 is 10 to 100 nm, for example, 50 nm; and the amorphous carbon film 106 The thickness is from 100 to 800 nm, for example 280 nm. Further, as the thickness of the etching target film, a tantalum carbide film 101: 30 nm, a carbonium oxide film (Low-k film) 102: 150 nm, a tantalum carbide film 103: 30 nm, a ceria film 104: 150 nm, Tantalum nitride film 105: 70 nm. Further, in place of the cerium oxide film 107, other lanthanoid films such as lanthanum oxyhydroxide, lanthanum hydride, lanthanum carbonitride or lanthanum hydride may also be used.

In this state, first, as shown in Fig. 3, the ArF resist film 109 is used as a mask, the BARC 108 and the ceria film 107 are plasma-etched, and the pattern of the ArF resist film 109 is transferred to the ceria. Film 107. At this time, since the ArF resist film 109 has low etching resistance, it disappears by etching and is etched to a part of the BARC 108.

Next, as shown in FIG. 4, the ruthenium dioxide film 107 is used as an etch mask. The amorphous carbon film 106 is etched using. Thereby, the pattern of the ArF resist film 109 is transferred to the amorphous carbon film 106. Here, the amorphous carbon film 106 formed by the above method has high etching resistance. Therefore, the amorphous carbon film 106 is etched with good shape, that is, the pattern of the ArF resist film 109 is correctly transferred to the amorphous carbon film 106.

Then, as shown in FIG. 5, the amorphous carbon film 106 is used as an etching mask, and the tantalum nitride film 105, the hafnium oxide film 104, the tantalum carbide film 103, and the tantalum carbonium oxide are sequentially etched by plasma etching. The film 102 and the tantalum carbide film 101. At this time, since the amorphous carbon film 106 formed by the above method has high etching resistance, the substrate to be etched, that is, the etching target film can be etched with a high selectivity. That is, the amorphous carbon film 106 is sufficiently left as an etching mask while the etching target film is being etched. Thereby, in the etching target film, a good etching shape without pattern distortion can be obtained.

At the point in time when the etching is finished, the cerium oxide film 107 has disappeared. Further, the residual amorphous carbon film 106 can be ashed by hydrogen/nitrogen and can be removed relatively easily.

Next, the physical properties and etching resistance of the amorphous carbon film formed by the method according to the present invention were evaluated.

Here, as a gas containing carbon and hydrogen and oxygen, a film was deposited on the wafer by plasma CVD using a C ₄ H ₄ O (furan) gas at a substrate temperature of 200 ° C. The electron diffraction image of the central portion of the obtained film is as shown in Fig. 6. In Fig. 6, no diffraction spot showing crystallinity was observed, so that the obtained film was confirmed to be amorphous carbon.

Next, the etching resistance of the amorphous carbon film thus obtained is compared with the etching resistance of the thermal oxide film (cerium oxide) and the etching resistance of the photoresist film for the g-line used as the lower resist. . The etching treatment uses a parallel plate type plasma etching apparatus, and as an etching gas, it is performed using C ₅ F ₈ gas, argon gas, or oxygen gas.

Results The etching rate of each film: ruthenium dioxide film: 336.9 nm/min

Photoresist film: 53.3nm/min

Amorphous carbon film: 46.4 nm/min. That is, the selection ratio of the photoresist film to the amorphous carbon film to the ceria film is 6.3 and 7.3, respectively. From the results, it was confirmed that the amorphous carbon film obtained by the method of the present invention is superior to the conventional photoresist film.

Further, the present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above embodiment, the processing gas used as the amorphous carbon film is a mixed gas of a hydrocarbon gas and an oxygen-containing gas, or a gas containing carbon and hydrogen and oxygen in the molecule; however, it is not limited thereto. . Further, in the above embodiment, the case where the amorphous carbon film formed according to the present invention is applied to the underlayer of the multilayer resist in the dry development technique has been described, but the invention is not limited thereto. The amorphous carbon film may be formed directly under the general photoresist film and used as an etching mask having a reflection preventing function. More amorphous carbon films can also be used in a variety of other applications.

Further, in the above embodiment, the semiconductor wafer is exemplified as the substrate to be processed, but the invention is not limited thereto. It is also applicable to other substrates such as a glass substrate for a flat panel display (FPD) typified by a liquid crystal display device (LCD).

1‧‧‧Processing room

1a‧‧‧Ceiling wall

1b‧‧‧ bottom wall

2‧‧‧ susceptor

3‧‧‧Support members

4‧‧‧ Guide ring

5‧‧‧heater

6‧‧‧heater power supply

7‧‧‧ thermocouple

8‧‧‧Electrode

9‧‧‧Insulating components

10‧‧‧Drinking head

11‧‧‧ gas inlet

12‧‧‧ gas discharge

13‧‧‧ gas piping

14‧‧‧ gas supply mechanism

15‧‧‧matcher

16‧‧‧High frequency power supply

17‧‧‧Exhaust pipe

18‧‧‧Exhaust device

20‧‧‧ gas diffusion space

21‧‧‧ Move in and out

22‧‧‧ gate valve

30‧‧‧Processing controller

31‧‧‧User interface

32‧‧‧Memory Department

100‧‧‧ film forming device

101‧‧‧Carbide film

102‧‧‧Carbon oxide film (Low-k film)

103‧‧‧Carbide film

104‧‧‧2O2 film

105‧‧‧ nitride film

106‧‧‧Amorphous carbon (α-C) film

107‧‧‧2O2 film

108‧‧‧Anti-reflection film

109‧‧‧ArF resist film

W‧‧‧ wafer

[Fig. 1] is a schematic cross-sectional view showing an example of a film forming apparatus which can be applied to a film forming method of an amorphous carbon film according to an embodiment of the present invention.

[Fig. 2] Fig. 2 is a cross-sectional view showing a structure required for a semiconductor device for producing an amorphous carbon film obtained by a method for forming an amorphous carbon film according to an embodiment of the present invention.

[Fig. 3] is a cross-sectional view showing a state in which the patterned ArF resist is used as a mask in the structure of Fig. 2, and the SiO ₂ film underneath is etched.

[Fig. 4] is a cross-sectional view showing a state in which the patterned SiO ₂ film is used as a mask in the structure of Fig. 3, and the amorphous carbon film underneath is etched.

[Fig. 5] is a cross-sectional view showing a state in which the patterned amorphous carbon film is used as a mask in the structure of Fig. 4, and the etching target film of the substrate is etched.

[Fig. 6] A view showing an electron diffraction image of an amorphous carbon film obtained in Examples.

Claims (12)

A method for forming an amorphous carbon film, comprising: a process of disposing a substrate in a processing container; and a process of supplying a processing gas containing carbon and hydrogen and oxygen to the processing container; and heating the above The process of processing the substrate in the container to decompose the processing gas to deposit an amorphous carbon film on the substrate, and the process of depositing the amorphous carbon film is to set the substrate temperature to 400 ° C or lower, and to process the processing container The internal pressure is set to 6.65 Pa or less, and the amorphous carbon film is deposited on the substrate by generating a plasma of the processing gas, and the amorphous carbon film has a wavelength of 250 nm or less and has 0.1 to 1.0. Light absorption coefficient. The method for forming an amorphous carbon film according to the first aspect of the invention, wherein the number of atoms of carbon and oxygen in the processing gas is from 3:1 to 5:1. The method for forming an amorphous carbon film according to the first aspect of the invention, wherein the ratio of the atomic ratio of carbon to hydrogen in the processing gas is 1:1 to 1:2. The method for forming an amorphous carbon film according to any one of claims 1 to 3, wherein the processing gas containing carbon, hydrogen, and oxygen includes a hydrocarbon gas and an oxygen-containing gas. a mixture of gases. The method for forming an amorphous carbon film according to the fourth aspect of the invention, wherein the carbonized hydrogen system has at least one of C ₂ H ₂ , C ₄ H ₆ and C ₆ H ₆ . The method for forming an amorphous carbon film according to any one of claims 1 to 3, wherein the processing gas containing carbon and hydrogen and oxygen is contained in the molecule and has carbon and Hydrogen and oxygen gases. The method for forming an amorphous carbon film according to claim 6, wherein the gas having carbon and hydrogen and oxygen in the molecule is at least one of C ₄ H ₄ O and C ₄ H ₈ O. . The film forming method of the amorphous carbon film according to the first aspect of the invention, wherein the film forming temperature is 100 to 300 ° C or lower. A method of manufacturing a semiconductor device, comprising: a process of forming an etching target film on a substrate; and a process of forming an amorphous carbon film on the etching target film; and forming an etching on the amorphous carbon film The patterning process and the etching of the etching target film by using the amorphous carbon film as an etching mask to form a specific structure, wherein the method of depositing the amorphous carbon film has a substrate disposed in the processing container And a process of supplying a processing gas containing carbon and hydrogen and oxygen to the processing container; and dissolving the processing gas by heating the substrate in the processing container to deposit an amorphous carbon film on the substrate In the above-described substrate, the substrate temperature is set to 400° C. or lower, and the pressure in the processing chamber is set to 6.65 Pa or less. The amorphous carbon film is deposited on the substrate by generating a plasma of the processing gas. Further, the amorphous carbon film has a light absorption coefficient of 0.1 to 1.0 at a wavelength of 250 nm or less. A method of manufacturing a semiconductor device, comprising: a process of forming an etching target film on a substrate; and a process of forming an amorphous carbon film on the etching target film; and forming the amorphous carbon film Engineering of a lanthanide film; and a process of forming a photoresist film on the lanthanide film; and a process of patterning the photoresist film; and etching the photoresist system by using the photoresist film as an etch mask Engineering of a film; and etching the amorphous carbon film as a mask to transfer the pattern of the photoresist film; and etching the amorphous carbon film as a mask In the above-described process of etching the target film, the above-described process of depositing an amorphous carbon film includes a process of disposing a substrate in a processing container, and a process of supplying a processing gas containing carbon and hydrogen and oxygen into the processing container; The substrate in the processing container is heated to decompose the processing gas, and an amorphous carbon film is deposited on the substrate. The substrate temperature is 400 ° C or lower, and the pressure in the processing container is set. It is set to 6.65Pa or less, by generating a plasma of the processing gas, the amorphous carbon film deposited on the substrate, and the amorphous carbon film based on a wavelength of 250nm or less, having Light absorption coefficient of 0.1~1.0. A computer-readable memory medium having a software for causing a computer to execute a control program, wherein the control program is configured to control a film forming apparatus by performing a film formation method of an amorphous carbon film. The method for forming an amorphous carbon film includes: a process of disposing a substrate in a processing container; and a process of supplying a processing gas containing carbon and hydrogen and oxygen into the processing container; and heating the inside of the processing container In the substrate, the process of depositing the amorphous carbon film on the substrate, and the process of depositing the amorphous carbon film, the substrate temperature is 400° C. or less, and the pressure in the processing container is set. When it is made 6.65 Pa or less, the amorphous carbon film having a light absorption coefficient of 0.1 to 1.0 is deposited on the substrate at a wavelength of 250 nm or less by generating a plasma of the processing gas. A film forming apparatus for an amorphous carbon film, comprising: a processing container loaded into a substrate; and a gas introduction portion that supplies a processing gas containing carbon and hydrogen and oxygen to the processing container; and heating the substrate And a plasma generating means for plasma-treating the processing gas; and an exhaust pipe for exhausting the inside of the processing container and connecting the exhaust device; And a control unit configured to: arrange a substrate in the processing container, and supply a processing gas containing carbon, hydrogen, and oxygen to the processing container by the gas introduction unit, and heat the substrate by the heating means; The substrate temperature is set to 400° C. or less, and the pressure in the processing chamber is set to 6.65 Pa or less, and the plasma of the processing gas is generated, and the substrate is deposited at a wavelength of 250 nm or less, and has a thickness of 0.1 to 1.0. The above amorphous carbon film having a light absorption coefficient.