[go: up one dir, main page]

TWI456801B - Led package and method for manufacturing the same - Google Patents

Led package and method for manufacturing the same Download PDF

Info

Publication number
TWI456801B
TWI456801B TW100104728A TW100104728A TWI456801B TW I456801 B TWI456801 B TW I456801B TW 100104728 A TW100104728 A TW 100104728A TW 100104728 A TW100104728 A TW 100104728A TW I456801 B TWI456801 B TW I456801B
Authority
TW
Taiwan
Prior art keywords
substrate
emitting diode
hole
support plate
light
Prior art date
Application number
TW100104728A
Other languages
Chinese (zh)
Other versions
TW201234668A (en
Inventor
Pin Chuan Chen
Hsin Chiang Lin
Wen Liang Tseng
Original Assignee
Advanced Optoelectronic Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Optoelectronic Tech filed Critical Advanced Optoelectronic Tech
Priority to TW100104728A priority Critical patent/TWI456801B/en
Publication of TW201234668A publication Critical patent/TW201234668A/en
Application granted granted Critical
Publication of TWI456801B publication Critical patent/TWI456801B/en

Links

Landscapes

  • Led Device Packages (AREA)

Claims (8)

一種發光二極體封裝結構,包括基板、電極層、發光二極體晶片和封裝層,其改進在於,所述基板上形成貫穿基板上表面及下表面的通孔,所述發光二極體封裝結構還包括蓋設於通孔底端且貼設於基板下表面的支撐板,電極層包括傳導部、反射部及連接部,所述傳導部自基板上表面向外延伸至基板的下表面,所述反射部連接所述傳導部且延伸入通孔內,並覆蓋通孔的整個周緣表面及支撐板的整個上表面,所述連接部位於基板的上表面且與所述反射部之間形成一間隔,發光二極體晶片設置於通孔內並位於支撐板上的電極層的反射部上,發光二極體晶片通過金屬導線與所述電極層的傳導部及連接部分別電性連接,封裝層覆蓋所述發光二極體晶片和金屬導線。 A light emitting diode package structure comprising a substrate, an electrode layer, a light emitting diode chip and an encapsulation layer, wherein the substrate has a through hole formed through the upper surface and the lower surface of the substrate, and the LED package is provided The structure further includes a support plate that is disposed on the bottom end of the through hole and is attached to the lower surface of the substrate. The electrode layer includes a conductive portion, a reflective portion and a connecting portion, and the conductive portion extends outward from the upper surface of the substrate to the lower surface of the substrate. The reflecting portion is connected to the conductive portion and extends into the through hole, and covers the entire peripheral surface of the through hole and the entire upper surface of the support plate, and the connecting portion is located on the upper surface of the substrate and formed between the reflective portion a light-emitting diode chip is disposed in the through hole and located on the reflective portion of the electrode layer on the support plate, and the light-emitting diode chip is electrically connected to the conductive portion and the connecting portion of the electrode layer through the metal wire, respectively. An encapsulation layer covers the light emitting diode chip and the metal wire. 如申請專利範圍第1項所述的發光二極體封裝結構,其中:所述支撐板的材料為銅。 The light emitting diode package structure according to claim 1, wherein the material of the support plate is copper. 如申請專利範圍第1項所述的發光二極體封裝結構,其中:所述支撐板、發光二極體晶片及通孔的數量均為多個,所述支撐板分別正對通孔設置,每一支撐板與基板圍設形成收容發光二極體晶片在內的一收容室。 The light-emitting diode package structure of claim 1, wherein the number of the support plate, the light-emitting diode chip and the through hole are plural, and the support plates are respectively disposed opposite to the through hole. Each support plate and the substrate enclose a receiving chamber for receiving the LED chip. 如申請專利範圍第1項所述的發光二極體封裝結構,其中:所述通孔及發光二極體晶片的數量均為多個,所述支撐板貼設於基板的一側且覆蓋所述通孔的一端,所述支撐板與基板圍設形成分別收容發光二極體晶片在內的複數收容室。 The light emitting diode package structure of claim 1, wherein the number of the through holes and the light emitting diode chips are plural, and the support plate is attached to one side of the substrate and covers the same. One end of the through hole, the support plate and the substrate are surrounded by a plurality of storage chambers respectively accommodating the LED chip. 如申請專利範圍第1項所述的發光二極體封裝結構,其中:所述基板的厚度為60~300微米。 The light emitting diode package structure according to claim 1, wherein the substrate has a thickness of 60 to 300 μm. 如申請專利範圍第1項所述的發光二極體封裝結構,其中:所述支撐板的厚度為35~150微米。 The light emitting diode package structure according to claim 1, wherein the support plate has a thickness of 35 to 150 μm. 一種發光二極體封裝結構的製造方法,包括以下步驟:提供基板,所述基板具有一上表面以及與所述上表面相對的一下表面,並在所述基板上形成貫穿上下表面的通孔;提供支撐板,將支撐板設置於通孔的底端並與基板的下表面固定連接;在基板和支撐板的表面上形成電極層,所述電極層包括傳導部、反射部及連接部,所述傳導部自基板上表面向外延伸至基板的下表面,所述反射部連接所述傳導部且延伸入通孔內,並覆蓋通孔的整個周緣表面及支撐板的整個上表面,所述連接部位於基板的上表面且與所述反射部之間形成一間隔;將發光二極體晶片置於通孔內並貼設於所述通孔底端的支撐板上的電極層的反射部上,並通過金屬導線將發光二極體晶片與所述電極層的傳導部及連接部分別形成電性連接;形成一封裝層,覆蓋所述發光二極體晶片和金屬導線,得到發光二極體封裝結構。 A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a substrate having an upper surface and a lower surface opposite to the upper surface, and forming a through hole penetrating the upper and lower surfaces on the substrate; Providing a support plate, the support plate is disposed at a bottom end of the through hole and fixedly connected to the lower surface of the substrate; forming an electrode layer on the surface of the substrate and the support plate, the electrode layer including a conductive portion, a reflective portion, and a connecting portion The conductive portion extends outward from the upper surface of the substrate to a lower surface of the substrate, and the reflective portion connects the conductive portion and extends into the through hole and covers the entire peripheral surface of the through hole and the entire upper surface of the support plate. The connecting portion is located on the upper surface of the substrate and forms a space between the reflecting portion and the reflective portion; the light emitting diode wafer is placed in the through hole and attached to the reflecting portion of the electrode layer on the supporting plate at the bottom end of the through hole And electrically connecting the light-emitting diode wafer and the conductive portion and the connecting portion of the electrode layer through a metal wire; forming an encapsulation layer covering the light-emitting diode wafer and the metal guide A light emitting diode package structure. 如申請專利範圍第7項所述的發光二極體封裝結構,其中:所述支撐板、發光二極體晶片及通孔的數量均為多個,所述支撐板分別正對通孔設置,每一支撐板與基板圍設形成收容發光二極體晶片在內的一收容室。 The light-emitting diode package structure of claim 7, wherein the number of the support plate, the light-emitting diode chip, and the through hole are plural, and the support plates are respectively disposed opposite to the through hole. Each support plate and the substrate enclose a receiving chamber for receiving the LED chip.
TW100104728A 2011-02-14 2011-02-14 Led package and method for manufacturing the same TWI456801B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100104728A TWI456801B (en) 2011-02-14 2011-02-14 Led package and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100104728A TWI456801B (en) 2011-02-14 2011-02-14 Led package and method for manufacturing the same

Publications (2)

Publication Number Publication Date
TW201234668A TW201234668A (en) 2012-08-16
TWI456801B true TWI456801B (en) 2014-10-11

Family

ID=47070156

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100104728A TWI456801B (en) 2011-02-14 2011-02-14 Led package and method for manufacturing the same

Country Status (1)

Country Link
TW (1) TWI456801B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078556B (en) * 2013-03-28 2017-03-01 展晶科技(深圳)有限公司 The manufacture method of package structure for LED
TWI624082B (en) * 2016-09-09 2018-05-11 Zhang yu shun Light-emitting diode package device and packaging method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI241033B (en) * 2004-03-26 2005-10-01 Super Bright Optoelectronics I Packaging structure of light emitting diode and its packaging method
TWM341924U (en) * 2007-11-06 2008-10-01 yan-tang Qiu Semiconductor package structure
TW201025525A (en) * 2008-12-19 2010-07-01 Taiwan Electronic Packaging Co Ltd Chip module structure assembly

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI241033B (en) * 2004-03-26 2005-10-01 Super Bright Optoelectronics I Packaging structure of light emitting diode and its packaging method
TWM341924U (en) * 2007-11-06 2008-10-01 yan-tang Qiu Semiconductor package structure
TW201025525A (en) * 2008-12-19 2010-07-01 Taiwan Electronic Packaging Co Ltd Chip module structure assembly

Also Published As

Publication number Publication date
TW201234668A (en) 2012-08-16

Similar Documents

Publication Publication Date Title
TWI692122B (en) Light emitting diode packaging structure and manufacturing method thereof
CN102842667B (en) Light-emitting diode packaging structure and method for producing same
JP2009105376A5 (en)
JP2013536592A5 (en)
JP2011171739A5 (en)
JP2013046072A5 (en)
JP2012094842A5 (en)
JP2010171443A5 (en)
JP2008544540A5 (en)
JP2013225643A5 (en)
JP2013026625A5 (en)
JP2011009572A5 (en)
JP2009194322A5 (en)
JP2013069807A5 (en)
CN102903705B (en) Light emitting diode packaging structure and manufacturing method thereof
JP2011513946A5 (en)
TWI427837B (en) Light-emitting diode package structure and manufacturing method thereof
JP2007288050A5 (en)
JP2013055318A5 (en)
JP2013505561A5 (en)
TWI455363B (en) Light-emitting diode package structure and manufacturing method thereof
KR20130009188A (en) Substrate for light emitting device
US8841172B2 (en) Method for forming package substrate
JP2015510277A5 (en)
TWI456801B (en) Led package and method for manufacturing the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees