TWI446139B - Circuits and methods to reduce or eliminate signal-dependent modulation of a reference bias - Google Patents
Circuits and methods to reduce or eliminate signal-dependent modulation of a reference bias Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other DC sources, e.g. providing buffering
- H02J7/345—Parallel operation in networks using both storage and other DC sources, e.g. providing buffering using capacitors as storage or buffering devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
- H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M1/08—Continuously compensating for, or preventing, undesired influence of physical parameters of noise
- H03M1/0863—Continuously compensating for, or preventing, undesired influence of physical parameters of noise of switching transients, e.g. glitches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/34—Analogue value compared with reference values
- H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
- H03M1/46—Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
- H03M1/74—Simultaneous conversion
- H03M1/80—Simultaneous conversion using weighted impedances
- H03M1/802—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices
- H03M1/804—Simultaneous conversion using weighted impedances using capacitors, e.g. neuron-mos transistors, charge coupled devices with charge redistribution
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Description
本發明係關於電子參考電路。特別是,本發明係關於電壓參考驅動器,當其定期耦接至一反應型負載時,仍可提供一大致固定輸出電壓。The present invention is directed to an electronic reference circuit. In particular, the present invention relates to a voltage reference driver that provides a substantially fixed output voltage when periodically coupled to a reactive load.
參考電壓已被廣泛使用於電子應用領域多年。參考電壓之目的係為了提供一穩定電壓,此穩定電壓基本上不會受到諸如溫度變化、能源供應電壓及負載條件之類的外部剌激的影響。此類參考在各種常用電路中為一重要部分,常用電路諸如在類比至數位(ADC)及數位至類比(DAC)轉換器、相位鎖定迴路、電壓調整器、比較電路等電路中。The reference voltage has been widely used in electronic applications for many years. The purpose of the reference voltage is to provide a regulated voltage that is substantially unaffected by external stimuli such as temperature variations, energy supply voltages, and load conditions. Such references are an important part of a variety of commonly used circuits such as analog to digital (ADC) and digital to analog (DAC) converters, phase locked loops, voltage regulators, comparator circuits, and the like.
在類比至數位轉換器中,電壓參考電路係用來提供一電壓,藉由與此電壓進行比較,可將一經取樣的類比訊號進行量化成數位域。例如,一經取樣的類比輸入訊號可逐次與多個電壓位準進行比較,該等電壓位準係部分基於參考電壓。這些比較結果係用來建立數位字,其代表該取樣的類比訊號之數位值。此類轉換器即為本領域為人熟知的逐次逼近暫存器(Successive Approximation Register,SARs)轉換器。In an analog to digital converter, a voltage reference circuit is used to provide a voltage by which a sampled analog signal can be quantized into a digital domain by comparison with this voltage. For example, a sampled analog input signal can be sequentially compared to a plurality of voltage levels that are based in part on a reference voltage. These comparisons are used to create a digital word that represents the digital value of the analog signal of the sample. Such converters are well known in the art as Successive Approximation Registers (SARs) converters.
一特定類型的SAR轉換器為電荷重新分配SAR轉換器,其使用電荷調整DAC以藉由電壓分割的方式來提供參考電壓的選定分數(fraction)。這一般係實現為複數個獨立轉換式電容之陣列,該等電容結合以產生參考電壓之二元加權分數(binary-weighted fraction)之總合。將輸入訊號之總合及參考電壓之選定分數,相繼與目前位準(例如,接地位準)進行比較,以產生複數比較位元,結合該等比較位元以產生一數位字,其代表所取樣的類比輸入訊號。A particular type of SAR converter is a charge redistribution SAR converter that uses a charge adjustment DAC to provide a selected fraction of the reference voltage by voltage division. This is typically implemented as an array of a plurality of independent switched capacitors that combine to produce a sum of binary-weighted fractions of the reference voltage. The sum of the input signals and the selected fraction of the reference voltage are successively compared with the current level (for example, the ground level) to generate a plurality of comparison bits, which are combined with the comparison bits to generate a digital word, which represents The analog input of the sampled input signal.
為了讓前述電荷調整DAC能操作在所要的精確度,重要的是,用來合成DAC輸出(其係針對所取樣的類比輸入訊號來加權)的參考電壓保持大致固定。參考電壓之變異可導致比較誤差,造成產生不精確或不正確的數位字,而因此限制了特定轉換器結構可達到的解析度。In order for the aforementioned charge adjustment DAC to operate at the desired accuracy, it is important that the reference voltage used to synthesize the DAC output (which is weighted for the sampled analog input signal) remains substantially fixed. Variations in the reference voltage can result in comparison errors, resulting in inaccurate or incorrect digits, thus limiting the resolution that can be achieved with a particular converter structure.
因此,已提出了多種可維持DAC及ADC電路之參考電壓大致固定的方法。由於逐次逼近ADC中之電荷調整DAC回應所取樣的類比訊號值,而將一些或所有其電容切換至參考電壓,因此可能有不能乎視的電流自電壓參考電路流入。此流入的電流會使參考電路的輸出電壓產生瞬時尖峰訊號。當該參考電壓之選定分數正與所取樣的類比訊號值作比較時,若該參考電壓係大致在其額定值上,則該尖峰訊號本身並不會影響ADC整體運作及準確度。然而,若流入的電流及瞬時尖峰皆受到所取樣的輸入訊號的影響(通常確實會受到影響),則參考電壓可由所取樣的輸入訊號進行調變,而可能導致相應的數位值失真。Therefore, various methods have been proposed to maintain the reference voltage of the DAC and ADC circuits substantially fixed. Since the charge-adjusting DAC in the successive approximation ADC responds to the sampled analog signal value and switches some or all of its capacitance to the reference voltage, there may be an unacceptable current flowing from the voltage reference circuit. This inrush current causes an instantaneous spike in the output voltage of the reference circuit. When the selected fraction of the reference voltage is being compared with the sampled analog signal value, if the reference voltage is substantially at its rated value, the spike signal itself does not affect the overall operation and accuracy of the ADC. However, if the incoming current and the instantaneous spike are affected by the sampled input signal (which is usually affected), the reference voltage can be modulated by the sampled input signal, which may cause the corresponding digital value to be distorted.
在該電路之實體實現上,轉換中之輸入訊號、流入的電流、瞬時尖峰訊號及流入的電流所導致的失真,四者之間可能存在複雜的關係。流入的電流所導致的失真可能可能對類比至數位轉換造成不利的影響,而因此希望能設計一種參考電壓電路,使得參考電壓大致上不會受到流入的電流的影響。In the physical implementation of the circuit, the distortion caused by the input signal, the incoming current, the instantaneous spike signal and the incoming current in the conversion may have a complicated relationship between the four. The distortion caused by the incoming current may have an adverse effect on the analog to digital conversion, and it is therefore desirable to design a reference voltage circuit such that the reference voltage is substantially unaffected by the incoming current.
因此,鑑於前述,希望能提供一種電路及方法,當此類電路定期與反應型負載耦接時而產生瞬時尖峰(其可能受到輸入訊號的影響),但此電路仍能維持大致固定的輸出電壓。Therefore, in view of the foregoing, it is desirable to provide a circuit and method that can generate a transient spike (which may be affected by an input signal) when it is periodically coupled to a reactive load, but the circuit can still maintain a substantially fixed output voltage. .
亦希望提供一種電路及方法,以提供大致固定的輸出電壓,用以驅動切換式電容DAC。It is also desirable to provide a circuit and method for providing a substantially fixed output voltage for driving a switched capacitor DAC.
本發明提供一種用以改善電壓參考電路之效能的電路及方法。當電壓參考驅動器電路與切換式反應型負載耦接時,其可維持大致固定的輸出電壓位準。當每一次參考驅動器電路之輸出發生電壓尖峰或脈衝時(或發生之前),電壓參考驅動器電路會將電壓調整迴路解耦該負載。此同步的解耦基本上可避免該調整電路被負載所引起的瞬時變化所干擾,因而可維持大致固定的輸出電壓,其基本上係與輸入訊號無關。The present invention provides a circuit and method for improving the performance of a voltage reference circuit. When the voltage reference driver circuit is coupled to the switched reactive load, it maintains a substantially fixed output voltage level. When a voltage spike or pulse occurs at the output of each reference driver circuit (or before it occurs), the voltage reference driver circuit decouples the voltage regulation loop from the load. This synchronous decoupling substantially prevents the adjustment circuit from being disturbed by transient changes caused by the load, thereby maintaining a substantially fixed output voltage that is substantially independent of the input signal.
在本發明之一具體實施例中,提供一電壓參考驅動器電路,其提供大致固定的輸出電壓給負載,且其包括一電壓調整電路,以產生一大致固定的電壓;一緩衝電路,其耦接至該電壓調整電路,且其依據由該電壓調整電路所產生的大致固定的電壓,來提供大致固定的輸出電壓給負載;及一隔離電路,其耦接至該電壓調整電路及該緩衝電路,用以當該負載所導致的調變脈衝發生時或發生前,可選擇性地斷接該緩衝電路與該電壓調整電路。在本發明之另一具體實施例中,提供一具改良的類比至數位轉換電路,其當取樣輸入訊號並將其由類比域轉換至數位域時具有改善的準確性。此電路包括一數位至類比轉換器電路,其具有複數個切換式電容,例如(不限於此)逼近電容;一電壓參考驅動器電路,其耦接該數位至類比轉換器電路,且其係經組態以提供一大致固定輸出電壓給該等複數個切換式電容。該電壓參考驅動器電路包括一電壓調整電路,其產生一大致固定電壓;一緩衝電路,其耦接該電壓調整電路,且基於由該電壓調整電路所產生的該大致固定電壓,來提供大致固定輸出電壓給該等複數個切換式電容;一隔離電路,其耦接該電壓調整電路及該緩衝電路,用以當切換該等複數個切換電容所導致的脈衝發生時或發生前,可選擇性地斷接該緩衝電路與該電壓調整電路,且其中選擇性地斷接該緩衝電路可大大減低或消除該脈衝,以避免其擴及到該電壓調整電路,如此可降低大致固定輸出電壓的偏移並可改善類比至數位轉換器之準確性。In one embodiment of the invention, a voltage reference driver circuit is provided that provides a substantially fixed output voltage to a load and that includes a voltage regulation circuit to generate a substantially fixed voltage; a buffer circuit coupled thereto To the voltage adjustment circuit, which provides a substantially fixed output voltage to the load according to a substantially fixed voltage generated by the voltage adjustment circuit; and an isolation circuit coupled to the voltage adjustment circuit and the buffer circuit, The buffer circuit and the voltage adjusting circuit are selectively disconnected when the modulation pulse caused by the load occurs or before the occurrence of the modulation pulse. In another embodiment of the present invention, an improved analog to digital conversion circuit is provided that has improved accuracy when sampling an input signal and converting it from an analog domain to a digital domain. The circuit includes a digital to analog converter circuit having a plurality of switched capacitors, such as, but not limited to, approximating capacitance; a voltage reference driver circuit coupled to the digital to analog converter circuit and State to provide a substantially fixed output voltage to the plurality of switched capacitors. The voltage reference driver circuit includes a voltage adjustment circuit that generates a substantially fixed voltage, a buffer circuit coupled to the voltage adjustment circuit, and providing a substantially fixed output based on the substantially fixed voltage generated by the voltage adjustment circuit The voltage is applied to the plurality of switching capacitors; an isolation circuit coupled to the voltage adjustment circuit and the buffer circuit for selectively switching when the pulses caused by the plurality of switching capacitors are generated or before being generated Disconnecting the buffer circuit from the voltage adjustment circuit, and selectively disconnecting the buffer circuit, wherein the pulse can be greatly reduced or eliminated to avoid spreading to the voltage adjustment circuit, thereby reducing the offset of the substantially fixed output voltage And can improve the accuracy of the analog to digital converter.
依據本發明之原則所建立之電壓參考驅動器電路200之一具體實施例之簡圖顯示於第2圖。如圖所示,參考驅動器電路200一般包括一放大器電路202、NMOS電晶體204及208、一切換開關206(例如一PMOS電晶體)、選擇性電晶體207、電容210及212、電晶體214、216、218、220及負載電路240。負載電路240為一般性切換式電容負載的一簡化表示,且其包括電容242及切換開關244。負載電路240並非參考驅動器電路200之一部分,且其係顯示來說明電路200可驅動某些類型切換式電容負載,此負載可使瞬時變化發生於輸出端236。A simplified diagram of one embodiment of a voltage reference driver circuit 200 constructed in accordance with the principles of the present invention is shown in FIG. As shown, the reference driver circuit 200 generally includes an amplifier circuit 202, NMOS transistors 204 and 208, a switch 206 (eg, a PMOS transistor), a selective transistor 207, capacitors 210 and 212, and a transistor 214. 216, 218, 220 and load circuit 240. Load circuit 240 is a simplified representation of a general switched capacitive load and includes capacitor 242 and switch 244. Load circuit 240 is not part of reference driver circuit 200 and is shown to illustrate that circuit 200 can drive certain types of switched capacitive loads that can cause transient changes to occur at output 236.
當電容被定期地切換與負載240之連接(稱為「切換期間」),負載電路240可自驅動器電路之輸出終端236吸引一或多電荷脈衝。在一切換期間完成後,進行一「調整期間」,其中電路200可被偏壓,以準備於一接續的切換期間提供希望的電壓位準。在某些具體實施例中,電路200可於此等調整期間維持負載240上之電壓大致固定。將瞭解到,參考驅動器電路200可用來驅動不同類型的負載,且在任一應用中可驅動一個以上的負載電路。When the capacitor is periodically switched to the load 240 (referred to as the "switching period"), the load circuit 240 can draw one or more charge pulses from the output terminal 236 of the driver circuit. After completion of a switching period, an "adjustment period" is performed in which circuit 200 can be biased to provide a desired voltage level during a subsequent switching. In some embodiments, circuit 200 can maintain the voltage on load 240 substantially constant during such adjustments. It will be appreciated that the reference driver circuit 200 can be used to drive different types of loads and can drive more than one load circuit in either application.
在操作上,參考驅動器電路200可在節點236提供大致固定的輸出電壓VREF (有時稱為VOUT )給切換式電容負載240。當一或多電容式負載於切換期間耦接至節點306時,他們將充電至一大致固定電壓。在某些具體實施例中,這種情形包括負載電路240為一逐次逼近或一管線式ADC中所用的電荷調整DAC之情形。因本發明而獲益的特定類型的DAC或ADC電路拓撲,包括(但不限於此)快閃DAC及ADC、多步驟(餘值產生)ADC(其包括管線式ADC)、Δ-ΣDAC及ADC、SAR ADC、子系統(sub-ranging)ADC、折疊ADC結構、乘法DAC(MDAC)等。In operation, reference driver circuit 200 can provide a substantially fixed output voltage V REF (sometimes referred to as V OUT ) to node 236 to switched capacitive load 240. When one or more capacitive loads are coupled to node 306 during switching, they will be charged to a substantially fixed voltage. In some embodiments, this situation includes the case where load circuit 240 is a successive approximation or a charge adjustment DAC used in a pipelined ADC. Specific types of DAC or ADC circuit topologies that benefit from the present invention, including but not limited to flash DACs and ADCs, multi-step (residual generation) ADCs (which include pipelined ADCs), delta-sigma DACs, and ADCs , SAR ADC, sub-ranging ADC, folded ADC structure, multiplying DAC (MDAC), etc.
在逐次逼近ADC及許多其它離散時間系統中,在某些特定離散時間點的參考電壓之值足以影響整個系統之效能。因此,如本說明書所用的該詞「參考電壓」,是指由參考電壓電路在某些特定離散時間點所提供的電壓,此電壓係與本發明進一步之優點及效能目標有關,然而本發明並非需涉及所有時間點或任何隨機時間點。In successive approximation ADCs and many other discrete time systems, the value of the reference voltage at certain discrete points in time is sufficient to affect the performance of the overall system. Accordingly, the term "reference voltage" as used in this specification refers to the voltage provided by the reference voltage circuit at certain discrete points in time, which voltage is related to further advantages and performance objectives of the present invention, however, the present invention is not All time points or any random time points need to be involved.
一開始,提供參考輸入電壓VIN 給放大器202之非反相端234。此電壓可用於建立由驅動器電路200於節點236處提供的電壓位準。例如,終端234之輸入可來自一帶隙參考電壓或其它已知的固定電壓源(未示出)。由於驅動器電路200不會自終端234吸引顯著的電荷脈衝,因此其簡化與負載電路240之連結。放大器202之輸出電壓係被由NMOS電晶體204及電阻214、216及218形成的一回授電路所控制。可包括電容210,用以補償負回授迴路之頻率響應,例如藉此確保穩定性。可選擇放大器202具有高增益,且可選擇NMOS電晶體204及208具有一預先決定之比例及類似的操作環境,以促進精準的電壓調整。Initially, a reference input voltage V IN is provided to the non-inverting terminal 234 of the amplifier 202. This voltage can be used to establish the voltage level provided by driver circuit 200 at node 236. For example, the input to terminal 234 can be from a bandgap reference voltage or other known fixed voltage source (not shown). Since the driver circuit 200 does not attract significant charge pulses from the terminal 234, it simplifies the connection to the load circuit 240. The output voltage of amplifier 202 is controlled by a feedback circuit formed by NMOS transistor 204 and resistors 214, 216 and 218. A capacitor 210 can be included to compensate for the frequency response of the negative feedback loop, for example to ensure stability. The selectable amplifier 202 has a high gain and the selectable NMOS transistors 204 and 208 have a predetermined ratio and similar operating environment to facilitate accurate voltage regulation.
如第2圖所示,放大器202之輸出係進一步經由一作為切換開關用之PMOS電晶體206,而耦接至NMOS電晶體208之間極。在調整期間,當PMOS切換開關206導通時,電容212被充電至放大器202提供之電壓。電晶體208及電阻220形成一緩衝電路,以提供輸出訊號VREF 給輸出節點236。在某些具體實施例中,可選擇緩衝電路來提供一所需的適當低輸出阻抗,以維持輸出電壓大致固定,並以高切換頻率驅動電容負載240。此外,電容212可耦接至NMOS電晶體208之閘極,以於切換期間維持一偏壓訊號(下文中將詳細說明之)。As shown in FIG. 2, the output of the amplifier 202 is further coupled to the pole between the NMOS transistors 208 via a PMOS transistor 206 as a switching switch. During the adjustment, when the PMOS switch 206 is turned on, the capacitor 212 is charged to the voltage provided by the amplifier 202. The transistor 208 and the resistor 220 form a buffer circuit to provide an output signal V REF to the output node 236. In some embodiments, a snubber circuit can be selected to provide a desired low output impedance to maintain the output voltage substantially fixed and to drive the capacitive load 240 at a high switching frequency. In addition, the capacitor 212 can be coupled to the gate of the NMOS transistor 208 to maintain a bias signal during the switching (described in detail below).
在輸出節點236係連接至切換式電容負載電路之情況下(諸如與某些類比至數位轉換器相關的負載電路),當一或多電容於切換期間耦接至輸出節點236時,電壓尖峰可能發生(概略顯示於第3圖)。這些電壓尖峰可包括與充電這些電容相關的電壓峰值。此種電壓尖峰可能透過NMOS電晶體208之閘極傳播而回頭影響由放大器202、電容210、NMOS電晶體204及電阻214、216及218形成的電壓調整迴路。Where output node 236 is connected to a switched capacitive load circuit (such as a load circuit associated with some analog to digital converters), when one or more capacitors are coupled to output node 236 during switching, voltage spikes may Occurs (summary shown in Figure 3). These voltage spikes can include voltage peaks associated with charging these capacitors. Such a voltage spike may propagate through the gate of the NMOS transistor 208 to affect the voltage regulation loop formed by the amplifier 202, the capacitor 210, the NMOS transistor 204, and the resistors 214, 216, and 218.
此種傳播的電壓尖峰可干擾電壓調整迴路,且使節點236上的輸出電壓VREF 產生不希望的偏移。在某些應用中,例如SAR ADC,電壓尖峰可能與提供至ADC之一類比訊號有關,及VREF 潛在的偏移可能造成失真且影響SAR ADC之效能與準確性。Such propagated voltage spikes can interfere with the voltage regulation loop and cause an undesirable offset in the output voltage V REF at node 236. In some applications, such as SAR ADCs, voltage spikes may be related to the analog signal provided to the ADC, and the potential offset of V REF may cause distortion and affect the performance and accuracy of the SAR ADC.
在某些具體實施例中,當電壓尖峰係由一偏壓訊號以相當低頻率調變時,可特別表現出此現象。例如,第1圖顯示一類比至數位轉換器之積分非線性(INL)量測結果,其係使用一習知直方圖方法對一低頻正弦函數測試訊號所得到的結果。之所以會產生可見的INL誤差,其部分是因與ADC接合的習知技術之參考電壓驅動器電路,其所提供的參考電壓會產生訊號相依之偏移的緣故。In some embodiments, this phenomenon is particularly manifested when the voltage spike is modulated by a bias signal at a relatively low frequency. For example, Figure 1 shows the results of an integral nonlinearity (INL) measurement of a analog-to-digital converter using a conventional histogram method to test the signal for a low frequency sinusoidal function. The visible INL error is due in part to the reference voltage driver circuit of the prior art coupled to the ADC, which provides a reference voltage that produces a signal dependent shift.
一種修正(或避免)此問題之方法,係在電壓尖峰發生前,解耦或斷接造成電壓尖峰之電路與控制迴路。此可避免由電壓尖峰所造成的干擾,傳播回到控制迴路而影響到電壓調整。可藉由控制PMOS切換開關206,當電壓尖峰可能發生在輸出節點236時,控制其為不導通(關閉,OFF)來達成此目的。One way to correct (or avoid) this problem is to decouple or disconnect the circuit and control loop that cause the voltage spike before the voltage spike occurs. This avoids interference caused by voltage spikes that propagate back to the control loop and affect voltage regulation. This can be achieved by controlling the PMOS switch 206 to control the non-conducting (off, OFF) when a voltage spike may occur at the output node 236.
例如‧在操作上,PMOS電晶體206之閘極可耦接至一控制訊號,此控制訊號係由一時脈電路或計時電路提供,其亦可控制切換式電容負載240之切換,使得二者大致同步運作(未示出)。因此,就在負載240進行切換之前(切換動作可能造成輸出236之電壓尖峰),PMOS電晶體206被關閉,以隔絕控制迴路與緩衝電路(如由提供互導之NMOS電晶體208及電阻220所形成之緩衝電路),藉此避免任何接踵而來的尖峰及其影響相當程度地傳送至控制迴路。在某些具體實施例中,可加入某些額外的傳播延遲電路至控制訊號,以確保適當的切換時間(未示出)。當PMOS切換電晶體206關閉時,電容212維持NMOS電晶體208之閘極端之電荷係隔絕,且確保輸出節點236在每一尖峰後仍設置在所要的電壓。在NMOS208與參考驅動器電路200之其它部分斷接的期間(即,PMOS切換開關206關閉時),此期間於此處係指一切換期間。For example, in operation, the gate of the PMOS transistor 206 can be coupled to a control signal, and the control signal is provided by a clock circuit or a timing circuit, which can also control the switching of the switched capacitive load 240 so that the two are substantially Synchronous operation (not shown). Thus, just prior to switching of load 240 (the switching action may cause a voltage spike in output 236), PMOS transistor 206 is turned off to isolate the control loop from the snubber circuit (eg, by NMOS transistor 208 and resistor 220 providing mutual conductance) The snubber circuit is formed), thereby avoiding any incoming spikes and their effects being transferred to the control loop to a considerable extent. In some embodiments, some additional propagation delay circuitry can be added to the control signal to ensure proper switching time (not shown). When the PMOS switching transistor 206 is turned off, the capacitor 212 maintains the charge isolation of the gate terminal of the NMOS transistor 208 and ensures that the output node 236 is still at the desired voltage after each spike. During the period when the NMOS 208 is disconnected from the other portions of the reference driver circuit 200 (i.e., when the PMOS switch 206 is turned off), this period is referred to herein as a switching period.
在某些具體實施例中,選擇性電阻207可提供作為額外保護,以減低任何可能發生在切換期間之前及(或)之後瞬間之尖峰(例如,由於不可預測負載條件或不完整設置)。選擇性電阻207亦可用來降低由於放大器202、NMOS204、電阻214、216、218及(或)外部提供之電壓VIN 所造成的VREF 雜訊成分。若需要,可將選擇性電阻207分成二部分,此二部分可被配置於PMOS切換開關206之任一端或兩端(未示出)。此外,在某些具體實施例中,NMOS208及NMOS電晶體204之汲極端可耦接至不同(或獨立)電壓源VDD ,以進一步解耦電壓控制迴路與緩衝電路(未示出)。In some embodiments, the selective resistance 207 can be provided as an additional protection to reduce any spikes that may occur before and/or after the switching period (eg, due to unpredictable load conditions or incomplete settings). Selective resistor 207 can also be used to reduce the V REF noise component due to amplifier 202, NMOS 204, resistors 214, 216, 218 and/or externally supplied voltage V IN . If desired, the selective resistor 207 can be split into two sections that can be placed at either or both ends of the PMOS switch 206 (not shown). Moreover, in some embodiments, the NMOS terminal of NMOS 208 and NMOS transistor 204 can be coupled to a different (or independent) voltage source V DD to further decouple the voltage control loop from the snubber circuit (not shown).
當所有預期的尖峰已充分消弱時(例如,基於參考電路所要的準確度),PMOS切換開關206再由控制訊號來開啟,且緩衝電路重新連接至控制迴路。此時,電容212上之橫誇電壓將與其斷接前之電壓大致相同(其實際上不會經由NMOS電晶體208之閘極損失電荷),而因此控制迴路將僅會受到將電容212與放大器202之輸出重新連接之最小干擾。因此,控制迴路將大致不受到由負載電路及(或)由於操作PMOS切換開關206所導致的尖峰的影響,而能達到良好的電壓調整效果。When all of the expected spikes have sufficiently weakened (eg, based on the desired accuracy of the reference circuit), the PMOS switch 206 is again turned on by the control signal and the snubber circuit is reconnected to the control loop. At this time, the voltage on the capacitor 212 will be substantially the same as the voltage before the disconnection (which does not actually lose the charge via the gate of the NMOS transistor 208), and thus the control loop will only be subjected to the capacitor 212 and the amplifier. The minimum interference of the output of 202 is reconnected. Therefore, the control loop will be substantially unaffected by the load circuit and/or the peak caused by operating the PMOS switch 206, and a good voltage adjustment effect can be achieved.
因此,當電路200係配置於類比至數位轉換器時,基本上可避免因類比輸入訊號(習知領域用於調變參考電壓VREF )所引起的失真影響。Therefore, when the circuit 200 is configured in an analog to digital converter, the influence of distortion caused by the analog input signal (used in the prior art for modulating the reference voltage V REF ) can be substantially avoided.
第4圖係一圖,例示說明藉由使用第2圖之電路而收到有益效果。特別是,第4圖顯示藉由使用前述第1圖之方法及系統(除了第2圖之參考驅動器電路200係用於介接ADC,以取代用來取得第1圖所示結果之習知驅動器電路)所取得的INL結果。Fig. 4 is a diagram illustrating the advantageous effects obtained by using the circuit of Fig. 2. In particular, FIG. 4 shows a conventional method by using the method and system of FIG. 1 above (in addition to the reference driver circuit 200 of FIG. 2 for interfacing the ADC, in place of the conventional driver for obtaining the result shown in FIG. Circuit) The resulting INL result.
電路200之可能的操作模式,係例示說明於第5圖之時序圖500中。圖500例示說明驅動器電路200係耦接至一切換式電容負載240,因而造成輸出節點236大致週期地於時間t3 、t6 、t9 、t12 等處發生瞬時電壓尖峰的情形。如圖所示,虛線502代表當負載240未切換且PMOS切換開關206持繼開啟(ON)時,在輸出節點236上會觀察到的額定輸出電壓。線504代表當負或240正進行切換時,在輸出節點236上可能觀察到的連續電壓訊號。輸出電壓於每一尖峰後,基本上會設置在其額定值,且因此其用於離散時間應用(例如SAR ADC)時係大致固定,因為離散時間應用僅在預定的離散時間點(例如,t1 、t4 、t7 、t10 ……)上評估此訊號。Possible modes of operation of circuit 200 are illustrated in timing diagram 500 of FIG. Diagram 500 illustrates system described driver circuit 200 is coupled to a switched capacitor load 240, thereby causing the output node 236 is substantially at the time period t 3, t 6, t 9 , the case of transient voltage spikes t 12, etc. occur. As shown, dashed line 502 represents the nominal output voltage that would be observed at output node 236 when load 240 was not switched and PMOS switch 206 was turned "ON". Line 504 represents a continuous voltage signal that may be observed at output node 236 when negative or 240 is being switched. The output voltage is essentially set at its nominal value after each spike, and is therefore generally fixed for discrete time applications (eg, SAR ADCs) because discrete time applications are only at predetermined discrete time points (eg, This signal is evaluated on t 1 , t 4 , t 7 , t 10 .........).
如圖所示,線506係代表PMOS切換開關206之邏輯狀態。在t1 至t2 、t4 至t5 、t7 至t8 等期間,切換開關係開啟,而t2 至t4 、t5 至t7 、t8 至t10 等期間,其係關閉。應瞭解到,PMOS切換開關206可藉由提供一低(low)訊號至其閘極端來開啟,類似地,其可藉由提供一高(high)訊號至其閘極端來關閉。As shown, line 506 represents the logic state of PMOS switch 206. During t 1 to t 2 , t 4 to t 5 , t 7 to t 8 , etc., the switching-on relationship is turned on, and during t 2 to t 4 , t 5 to t 7 , t 8 to t 10 , etc., the system is turned off. . It will be appreciated that the PMOS switch 206 can be turned on by providing a low signal to its gate terminal, similarly, it can be turned off by providing a high signal to its gate terminal.
因此,PMOS切換開關206可於切換期間輸出節點236發生瞬時尖峰時關閉,因此可避免所發生的尖峰干擾電壓調整迴路。PMOS切換開關206可在VREF 大致到達其額定值時開啟,因此可保證電容212將被充電至適當電壓(由電壓調整迴路提供),而基本上不會干擾該電壓調整迴路。Therefore, the PMOS switch 206 can be turned off when the output node 236 is transiently peaked during switching, so that the occurrence of a spike interference voltage adjustment loop can be avoided. The PMOS switch 206 can be turned on when V REF substantially reaches its nominal value, thus ensuring that the capacitor 212 will be charged to the appropriate voltage (provided by the voltage regulation loop) without substantially interfering with the voltage regulation loop.
在本發明某些具體實施例中,PMOS切換開關206可在切換期間保持關閉,而於切換期間輸出節點236可能發生多個瞬時電壓尖峰。第5圖顯示一特定示範例,其中每一切換期間僅發生一次瞬時變化,且此例中之運作基本上具週期性。應瞭解到,參考驅動器電路200亦可有效應用於電壓尖峰基本上不具週期性且負載電路240於一切換期間可執行多次切換操作的情況。In some embodiments of the invention, PMOS switch 206 may remain off during switching, while output node 236 may experience multiple transient voltage spikes during switching. Figure 5 shows a particular example in which only one transient change occurs during each switching, and the operation in this example is substantially periodic. It will be appreciated that the reference driver circuit 200 can also be effectively applied to situations where the voltage spikes are substantially non-periodic and the load circuit 240 can perform multiple switching operations during a switch.
本發明之某些具體實施例可包括偵測電路,如頻率偵測或尖峰預測電路,以決定何時有利於操作PMOS切換開關206。某些具體實施例可包括一電路,用以實現一適性演算法以控制時間源。Certain embodiments of the present invention may include detection circuitry, such as frequency detection or spike prediction circuitry, to determine when it is advantageous to operate the PMOS switch 206. Some embodiments may include a circuit to implement a fitness algorithm to control the time source.
本發明之其它具體實施例中,PMOS切換開關206可操作在一預定型態,不論負載電路240是否可或將導致一大的電壓尖峰於輸出節點236上。In other embodiments of the invention, PMOS switch 206 can operate in a predetermined configuration regardless of whether load circuit 240 can or will cause a large voltage spike on output node 236.
此外,在某些特定簡化電路中,PMOS電晶體206及電容212可移除,其造成電路組態基本上直接連接於放大器202與NMOS電晶體208之間(未示出)。在此種電路實現中,切換期間之電壓尖峰可透過NMOS電晶體208、204及回授電阻214、216而傳播至放大器202之反相端。然而此尖峰之大小比發生在輸出節點236之尖峰還小。於放大器202之反相端上之電壓尖峰之大小,可藉由增加電容210之值或藉由降低放大器202之輸出阻抗來減低。在某些具體實施例中,放大器202可為一二級放大器,且頻率補償電容210可併入此二級放大器中。Moreover, in some particular simplified circuits, PMOS transistor 206 and capacitor 212 are removable, which causes the circuit configuration to be substantially directly coupled between amplifier 202 and NMOS transistor 208 (not shown). In such a circuit implementation, voltage spikes during switching can propagate through NMOS transistors 208, 204 and feedback resistors 214, 216 to the inverting terminal of amplifier 202. However, the magnitude of this spike is smaller than the peak occurring at output node 236. The magnitude of the voltage spike at the inverting terminal of amplifier 202 can be reduced by increasing the value of capacitor 210 or by reducing the output impedance of amplifier 202. In some embodiments, amplifier 202 can be a two-stage amplifier and frequency compensation capacitor 210 can be incorporated into the secondary amplifier.
此外,上述之簡化具體實施例可修改成包括選擇性電阻207於放大器202之輸出及NMOS208之閘極之間。電容212亦可提供於此實施例中。在此具體實施例中,在VIN 至VREF 之低通轉換函數中引入一額外極點,其可幫助減低任何在VREF 所觀察到的雜訊。Moreover, the above-described simplified embodiment can be modified to include a selective resistor 207 between the output of amplifier 202 and the gate of NMOS 208. Capacitor 212 can also be provided in this embodiment. In this embodiment, an extra pole is introduced in the low pass transfer function of V IN to V REF , which can help reduce any noise observed at V REF .
由前述說明將認知到,上述原理可併入各種其它電路組態,以進一步取得此處所述之好處。例如,參考電路200之功能性可併入至或延伸成其它拓撲(topology),包括(但不限於此)差動參考電路或具有多個接地方案之電路、具有多輸出之參考電路、低電壓應用、具有限餘隙(headroom)之應用、具改良式功率供應斥拒比(rejection ratio)之應用、具修改之電壓控制迴路驅動器等。It will be appreciated from the foregoing description that the above principles can be incorporated into various other circuit configurations to further achieve the benefits described herein. For example, the functionality of reference circuit 200 can be incorporated into or extended to other topologies including, but not limited to, differential reference circuits or circuits having multiple grounding schemes, reference circuits with multiple outputs, low voltage Applications, applications with headroom, applications with improved power supply rejection ratio, modified voltage control loop drivers, etc.
第6圖顯示此拓撲之一範例,多接地拓撲。如圖所示,驅動器電路600與驅動器電路200在多方面相類似,二者所包括之組件及功能性方塊,一般具有類似編號以代表類似功能性及大致對應關係。例如,參考驅動器電路600一般包括一放大器電路602、NMOS電晶體604及608、切換元件606、選擇性電阻607、電容610及612、及電阻618及620(對應第2圖之放大器電路202、NMOS電晶體204及208、切換元件206、選擇性電阻207、電容210及212、及電阻218及220)。Figure 6 shows an example of this topology, a multi-ground topology. As shown, the driver circuit 600 is similar in many respects to the driver circuit 200, and the components and functional blocks included therein generally have similar numbers to represent similar functionality and general correspondence. For example, the reference driver circuit 600 generally includes an amplifier circuit 602, NMOS transistors 604 and 608, a switching element 606, a selective resistor 607, capacitors 610 and 612, and resistors 618 and 620 (corresponding to the amplifier circuit 202 and NMOS of FIG. 2). The transistors 204 and 208, the switching element 206, the selective resistor 207, the capacitors 210 and 212, and the resistors 218 and 220).
此外,類似第2圖,第6圖中所示之電路包括一通用切換式電容負載電路640,其包括電容642及切換開關644及646,這些不為參考驅動器電路600之一部分。驅動器電路600額外地包括切換開關630及632,及連接至一導電接地網路內三個不同點之連結。接地網路中不可避免且有限的寄生阻阬,一般係以電阻615、616及617代表。接地網路中三個相異點可於一中央位置互相電性短路,該位置可稱作「聯合接地(star-ground)」連結。此接地方案常用來避免具雜訊、高頻或值大之訊號與其它較敏感電路及訊號共享一共用的相互連結式接地網路,而避免因此一連結而影響該電路及訊號(即,避免因接地引發的由其它電路流進的回流電流的相關干擾,使區域接地網路中干擾電壓下降)。Moreover, similar to the second diagram, the circuit shown in FIG. 6 includes a universal switched capacitive load circuit 640 that includes a capacitor 642 and switchers 644, and 646 that are not part of the reference driver circuit 600. The driver circuit 600 additionally includes toggle switches 630 and 632 and connections to three different points within a conductive grounded network. The inevitable and limited parasitic resistance in grounded networks is generally represented by resistors 615, 616 and 617. The three distinct points in the grounding network can be electrically shorted to each other at a central location, which can be referred to as a "star-ground" link. This grounding scheme is often used to avoid interconnecting grounded networks with noise, high frequency or large value signals shared with other sensitive circuits and signals, and to avoid affecting the circuit and signals due to a connection (ie, avoiding The interference caused by the return current flowing from other circuits due to grounding causes the interference voltage in the regional grounding network to drop).
在操作上,參考驅動器電路600功能基本上類似前述之參考驅動器電路200,但更包括可同步切換接地網路中多個點間之電容612之底板之功能。In operation, the reference driver circuit 600 functions substantially similar to the aforementioned reference driver circuit 200, but further includes the function of simultaneously switching the bottom plate of the capacitor 612 between the plurality of points in the ground network.
例如,參考輸入電壓VIN 之係提供至放大器602之非反相端,其建立驅動器電路600提供之電壓位準。如前述之說明,此可利用一帶隙參考電壓或其它已知固定電壓源(未示出)來達成。可實現此固定電壓源,其中使其區域接地網路617係基本上與其它接地網路615及616分開(除了該共用的「聯合接地」連結)。電壓調整電路(放大器602、NMOS604、電容610及電阻618)提供一電位,其追蹤提供至放大器602之非反相輸入端的電位,然其二者基本上皆不受到接地網路615中存在的電壓降及瞬時變化之影響。For example, the reference input voltage V IN is provided to the non-inverting terminal of amplifier 602, which establishes the voltage level provided by driver circuit 600. As explained above, this can be accomplished using a bandgap reference voltage or other known fixed voltage source (not shown). This fixed voltage source can be implemented with its regional ground network 617 substantially separated from the other ground networks 615 and 616 (except for the shared "combined ground" connection). The voltage regulation circuit (amplifier 602, NMOS 604, capacitor 610, and resistor 618) provides a potential that tracks the potential provided to the non-inverting input of amplifier 602, which are substantially unaffected by the voltage present in grounded network 615. The impact of falling and transient changes.
如第6圖所示,放大器602之輸出係進一步透過切換開關606及選擇性電阻607,耦接至NMOS電晶體608之閘極。在調整期間,電容612之頂板充電至放大器602提供之電位。同時,電路612之底板透過切換開關630連接至接地網路617,接地網路617對提供輸入電壓VIN 之固定電壓源而言係屬區域性。當切換開關630關閉時,切換開關632打開,反之亦然。因此,在一調整期間,電容612充電至適當電壓差動,其基本上不受到接地網路615(對緩衝電路而言屬區域性)中可能存在的任何瞬時變化及靜態電壓降的影響。緩衝電路包括電晶體608及電阻620。As shown in FIG. 6, the output of the amplifier 602 is further coupled to the gate of the NMOS transistor 608 through the switch 606 and the selective resistor 607. During the adjustment, the top plate of capacitor 612 is charged to the potential provided by amplifier 602. At the same time, the bottom plate of circuit 612 is coupled to ground network 617 via switch 630, which is regional to a fixed voltage source that provides input voltage V IN . When the changeover switch 630 is turned off, the changeover switch 632 is turned on, and vice versa. Thus, during an adjustment, capacitor 612 is charged to an appropriate voltage differential that is substantially unaffected by any transient variations and static voltage drops that may be present in grounded network 615 (regional to the buffer circuit). The buffer circuit includes a transistor 608 and a resistor 620.
在一切換期間,切換開關606打開,斷接電壓調整電路與電容612及輸出。同樣的,在一切換期間,當切換開關630打開且切換開關632關閉時,電容612之底板係連接至接地網路615之一節點,其係鄰近切換式電容負載電路640之一連接端且與此連接端具有大致相同電位。緩衝電路將藉此提供一參考電壓橫跨於切換式電容負載電路640之連接端,此參考電壓基本上不受到接地網路615、616及617中之干擾電壓降及瞬時變化之影響。During a switch, the switch 606 is opened to disconnect the voltage adjustment circuit from the capacitor 612 and the output. Similarly, during a switch, when the switch 630 is open and the switch 632 is closed, the bottom plate of the capacitor 612 is connected to one of the grounding networks 615, which is adjacent to one of the switched capacitive load circuits 640 and This connection has approximately the same potential. The snubber circuit will thereby provide a reference voltage across the connection of the switched capacitive load circuit 640 which is substantially unaffected by the interference voltage drop and transient variations in the ground networks 615, 616 and 617.
此外,在切換期間,相當大的電流脈衝可流過NMOS608及流進接地回送路徑615。此電流脈衝可引發接地路徑615中之大瞬時變化。然而,如前述之說明,此瞬時變化將不會對橫跨負載電路640之參考電壓造成太大影響。此外,由於這些電流脈衝不流進接地網路617及616(對固定電壓源及電壓調整電路而言屬區域性),因此基本上將不會妨礙或干擾到這些電路的操作。In addition, during switching, a relatively large current pulse can flow through NMOS 608 and into ground return path 615. This current pulse can cause large transient changes in the ground path 615. However, as explained above, this transient change will not have a significant impact on the reference voltage across load circuit 640. Moreover, since these current pulses do not flow into ground networks 617 and 616 (regional for fixed voltage sources and voltage regulation circuits), they will not substantially interfere with or interfere with the operation of these circuits.
例如,在操作上,切換開關606、630及632可耦接至一控制訊號(未示出),此訊號亦控制負載電路640之切換,使得該等開關及電路可同步運作。切換開關632之打開及關閉操作與切換開關606及630相反。在某些具體實施例中,於切換開關606、630及632執行每一次切換操作時,負載電路640之切換開關可歷經一或多次切換操作,如此於每一切換期間當切換開關606及630打開而切換開關632關閉時,可能會造成數次瞬時變化發生。For example, in operation, the switches 606, 630, and 632 can be coupled to a control signal (not shown) that also controls the switching of the load circuit 640 so that the switches and circuits can operate synchronously. The opening and closing operations of the changeover switch 632 are opposite to the changeover switches 606 and 630. In some embodiments, the switch of the load circuit 640 may undergo one or more switching operations when the switching switches 606, 630, and 632 perform each switching operation, such that the switches 606 and 630 are switched during each switching. When turned on and the switch 632 is turned off, several transient changes may occur.
因此,第6圖之電路描述一拓撲,其可選擇性耦接各種可得接地點間之某些電路特定部分,以將敏感的類比控制迴路與耦接至切換式電容負載之輸出電性分開,以大大消減接地干擾或將其減至最低,進而避免影響該類比控制迴路。此外,電路600之緩衝部分係選擇性地於切換期間參考與負載電路640基本上相同的接地點,以大大消除另一接地干擾之影響,藉此改善提供至負載電路640之電壓調整。Thus, the circuit of Figure 6 depicts a topology that selectively couples certain circuit specific portions between various available ground points to separate the sensitive analog control loop from the output coupled to the switched capacitive load. To greatly reduce or minimize grounding interference, thereby avoiding affecting the analog control loop. Moreover, the buffer portion of circuit 600 selectively references substantially the same ground point as load circuit 640 during switching to substantially eliminate the effects of another ground disturbance, thereby improving the voltage regulation provided to load circuit 640.
另一依據本發明之一態樣建構之驅動器電路範例,為一雙輸出組態,顯示於第7A圖中。如圖所示,參考驅動器電路700係經組態設定成提供一參考電壓至二切換式電容負載(負載740及750)。此組態允許參考驅動器電路700可提供一大致固定電壓至二(或更多)負載,且減少一負載(例如,740)進行切換時對提供至其它負載(例如,750)之電壓所造成的潛在干擾。Another example of a driver circuit constructed in accordance with one aspect of the present invention is a dual output configuration, shown in Figure 7A. As shown, the reference driver circuit 700 is configured to provide a reference voltage to two switched capacitive loads (loads 740 and 750). This configuration allows the reference driver circuit 700 to provide a substantially fixed voltage to two (or more) loads and to reduce the voltage supplied to other loads (eg, 750) when a load (eg, 740) is switched. Potential interference.
此種組態之一優點為,單一參考電路能夠驅動個別負載,每一負載具有不同的負載特性及不同的電性功能,且二負載間無直接連結及大電性依賴。One of the advantages of this configuration is that a single reference circuit can drive individual loads, each load has different load characteristics and different electrical functions, and there is no direct connection and large electrical dependency between the two loads.
如圖所示,電路700在許多方面類似電路200,二者所包括之組件及功能性方塊,一般具有類似編號以代表類似功能性及大致對應關係。例如,參考電路700一般包括一放大器電路702、NMOS電晶體704及708、切換元件706、選擇性電阻707、電容710及712、及電阻718及720(對應第2圖之放大器電路202、NMOS電晶體204及208、切換元件206、選擇性電阻207、電容210及212、及電阻218及220)。As shown, circuit 700 is similar in many respects to circuit 200, and the components and functional blocks included therein generally have similar numbers to represent similar functionality and general correspondence. For example, the reference circuit 700 generally includes an amplifier circuit 702, NMOS transistors 704 and 708, a switching element 706, a selective resistor 707, capacitors 710 and 712, and resistors 718 and 720 (corresponding to the amplifier circuit 202 and NMOS of FIG. 2). Crystals 204 and 208, switching element 206, selective resistor 207, capacitors 210 and 212, and resistors 218 and 220).
此外,類似第2圖,參考電路700包括一通用負載電路740,其包括(為例示說明)電容742及切換開關744及746,這些不為參考驅動器電路700之一部分。電路700額外地包括一第二通用負載電路750,其具有電容752及切換開關754及756,負載電路750透過由NMOS709及電阻721所構成的緩衝器而連接至參考電路700。負載電路750基本上不受到負載電路740之影響,且其亦非參考電路700之一部分。Moreover, like FIG. 2, reference circuit 700 includes a general purpose load circuit 740 that includes (for illustrative purposes) capacitor 742 and switch 744 and 746, which are not part of reference driver circuit 700. The circuit 700 additionally includes a second universal load circuit 750 having a capacitor 752 and switching switches 754 and 756. The load circuit 750 is coupled to the reference circuit 700 through a buffer formed by the NMOS 709 and the resistor 721. Load circuit 750 is substantially unaffected by load circuit 740 and is also not part of reference circuit 700.
將瞭解到,負載電路740及750亦可代表一單一組成負載電路之獨立部分。例如,負載電路740及750二者集合起來可成為嵌入於SAR ADC內之電荷調整DAC。在該組態下,負載電路740可為DAC之一部分,電路740轉換具有較高加權之數位字之位元,而負載電路750可為DAC之另一部分,其轉換具有較低加權之位元。It will be appreciated that load circuits 740 and 750 can also represent a separate component of a single component load circuit. For example, both load circuits 740 and 750 can be combined to form a charge-adjusting DAC embedded in a SAR ADC. In this configuration, load circuit 740 can be part of a DAC, circuit 740 converts bits with higher weighted digits, and load circuit 750 can be another portion of the DAC that converts bits with lower weights.
在操作上,參考驅動器電路700功能基本上類似前述之參考驅動器電路200,但更包括一額外參考電壓輸出至負載電路750。In operation, the reference driver circuit 700 functions substantially similar to the aforementioned reference driver circuit 200, but further includes an additional reference voltage output to the load circuit 750.
類似驅動器電路200及600之操作,放大器702之輸出係由一提供至放大器702之非反相端之參考輸入電壓VIN 所建立,其建立由參考驅動器700提供之電壓位準。如前文所提到,此可使用一帶隙參考電壓或其它已知固定電壓源來達成。放大器702之輸出電壓係由NMOS電晶體704及電阻718構成的回授網路所控制。Similar to the operation of driver circuits 200 and 600, the output of amplifier 702 is established by a reference input voltage V IN provided to the non-inverting terminal of amplifier 702, which establishes the voltage level provided by reference driver 700. As mentioned previously, this can be achieved using a bandgap reference voltage or other known fixed voltage source. The output voltage of amplifier 702 is controlled by a feedback network of NMOS transistor 704 and resistor 718.
如第7A圖所示,放大器702之輸出係進一步透過切換開關706及選擇性電阻707,耦接至NMOS電晶體708及709之閘極。在切換期間,當切換開關706關閉時,電容712維持NMOS電晶體708及709之閘極上之電荷,其決定提供至負載電路740及750之電壓。在調整期間,切換開關706關閉,將電容712充電至放大器702提供之電壓。更特定言之,放大器702之輸出係透過切換開關706而耦接至電晶體708之閘極,電晶體708與電阻702一起形成一緩衝電路,以提供經緩衝輸出參考電壓至負載電路740。As shown in FIG. 7A, the output of the amplifier 702 is further coupled to the gates of the NMOS transistors 708 and 709 through the switch 706 and the selective resistor 707. During switching, when switch 706 is turned off, capacitor 712 maintains the charge on the gates of NMOS transistors 708 and 709, which determines the voltage supplied to load circuits 740 and 750. During the adjustment, the diverter switch 706 is turned off, charging the capacitor 712 to the voltage provided by the amplifier 702. More specifically, the output of amplifier 702 is coupled to the gate of transistor 708 via switch 706, which together with resistor 702 forms a snubber circuit to provide a buffered output reference voltage to load circuit 740.
類似的,放大器702之輸出係透過切換開關706而耦接至電晶體709之閘極,電晶體709與電阻721一起形成一緩衝電路,以提供經緩衝輸出參考電壓至負載電路750。在調整期間,電容712充電至放大器702提供之電壓位準。Similarly, the output of amplifier 702 is coupled to the gate of transistor 709 via switch 706, which together with resistor 721 forms a snubber circuit to provide a buffered output reference voltage to load circuit 750. During the adjustment, capacitor 712 is charged to the voltage level provided by amplifier 702.
在切換期間,切換開關706打開而斷接放大器702與電晶體708及709之閘極,以避免電壓尖峰由切換式電容負載電路740或750回傳至控制迴路。當這種情況發生時,NMOS電晶體708及709之閘極上偏壓訊號,係由偏壓電容712上仍然大致固定的電壓所維持。此外,切換開關706之一控制節點(未示出)可耦接至一控制訊號,此訊號用以調節切換式電容負載740及750之切換,使得此三者可同步運作。During the switch, the switch 706 opens to disconnect the amplifier 702 from the gates of the transistors 708 and 709 to prevent voltage spikes from being transmitted back to the control loop by the switched capacitive load circuit 740 or 750. When this occurs, the bias voltage on the gates of NMOS transistors 708 and 709 is maintained by a substantially constant voltage across bias capacitor 712. In addition, a control node (not shown) of the switch 706 can be coupled to a control signal for adjusting the switching of the switched capacitive loads 740 and 750 so that the three can operate synchronously.
因此,正當要發生電壓尖峰前,切換開關706打開,隔離NMOS電晶體708及709與電路700之其它部分,且避免接著發生的電壓尖峰及其影響傳播至包含有放大器702之控制迴路,進而干擾該迴路。在某些具體實施例中,可加入額外的傳播延遲電路以確保正確的切換時間(未示出)。Therefore, just before the voltage spike occurs, the switch 706 is opened, the NMOS transistors 708 and 709 are isolated from the rest of the circuit 700, and the subsequent voltage spikes and their effects are prevented from propagating to the control loop containing the amplifier 702, thereby interfering with The loop. In some embodiments, an additional propagation delay circuit can be added to ensure proper switching time (not shown).
在某些具體實施例中,放大器702可設計成具有一低輸出阻抗(例如,二級放大器),且電容710可包含在放大器702中以控制迴路之穩定性。此外,可選擇性電阻707可提供作為一額外保護,以減低切換期間之前及(或)之後不久所發生的控制迴路之干擾(例如,由於不可預測的負載條件)。選擇性電阻707亦可用來減少由放大器702、NMOS704及VIN 所導致的雜訊成分。若需要,選擇性電阻707可一分為二,且提供至切換開關706之任一端或兩端(未示出)。此外,在某些特定實施例中,NMOS電晶體704、708及709之汲極可耦接至不同的(或獨立的)供應電壓源VDD ,以進一步解耦電壓控制迴路與緩衝電路(未示出)。In some embodiments, amplifier 702 can be designed to have a low output impedance (eg, a secondary amplifier), and capacitor 710 can be included in amplifier 702 to control the stability of the loop. In addition, the selectable resistor 707 can be provided as an additional protection to reduce interference from the control loop that occurs before and/or shortly after the switching period (eg, due to unpredictable load conditions). Selective resistor 707 can also be used to reduce the noise components caused by amplifier 702, NMOS 704, and V IN . If desired, the selective resistor 707 can be split into two and provided to either or both ends of the switch 706 (not shown). Moreover, in some particular embodiments, the drains of NMOS transistors 704, 708, and 709 can be coupled to different (or independent) supply voltage sources V DD to further decouple the voltage control loop from the buffer circuit (not show).
驅動器電路700之特定實施例,可依據某些特定應用或期望之效能目標以各種方式來進行組態設計。例如,在一特定具體實施例中,NMOS電晶體708與709及電阻720與721可製作具有相同或類似值。然而,NMOS電晶體708與709及電阻720與721無需相同,但可設計成具有大致相同的電流密度。在此具體實施例中,負載電路740及750可與切換開關706進行同步切換(雖然若需要亦可使用其它切換方案)。在某些具體實施例中,控制迴路之回授網路(NMOS704及電阻718)可為二緩衝電路(NMOS708及電阻720;NMOS709及電阻721)之比例調整版本,而該二緩衝電路本身亦可為另一之比例調整版本。The particular embodiment of driver circuit 700 can be configured in a variety of ways depending on certain particular applications or desired performance goals. For example, in a particular embodiment, NMOS transistors 708 and 709 and resistors 720 and 721 can be fabricated with the same or similar values. However, NMOS transistors 708 and 709 and resistors 720 and 721 need not be identical, but can be designed to have substantially the same current density. In this particular embodiment, load circuits 740 and 750 can be switched synchronously with switch 706 (although other switching schemes can be used if desired). In some embodiments, the feedback loop of the control loop (NMOS 704 and resistor 718) can be a scaled version of the second buffer circuit (NMOS 708 and resistor 720; NMOS 709 and resistor 721), and the second buffer circuit itself can also Adjust the version for another ratio.
此外,將瞭解到雖然驅動器電路700如圖所示僅提供二參考電壓輸出,但若需要,此電路可延伸加入額外的緩衝電路,以提供三或更多的參考電壓輸出。In addition, it will be appreciated that although the driver circuit 700 provides only two reference voltage outputs as shown, this circuit can be extended to add additional buffer circuits to provide three or more reference voltage outputs, if desired.
參考電路700之特定具體實施例可有利於驅動逐步逼近A/D轉換器(及類似電路)中之切換式電容DAC。例如,一DAC可實現成二(或更多)低解析切換式電容DAC之結合,該等電容如本領域所知相互間電容式耦接(未示出)。此一DAC之一例為一14位元DAC,其結合一8位元MDAC(用於轉換位元1至8)及一6位元LDAC(用於轉換位元9至14)。然而在此組態下,由於LDAC係電容耦接至MDAC,因此LDAC可能吸引比其加權因子所指示還更多的電流(例如,比較第7B圖中第3及4欄之位元9-14,其說明一真二值加權DAC(第3欄)所吸引的電荷與前述MDAC-LDAC結合所吸引之電荷(第4欄),二電荷之差)。由於切換負載電路所造成的電壓尖峰,一般會隨負載電路所吸引之電荷量增加而增加其大小。如第7B圖之第4欄所示,由於LDAC吸引相當大的電荷脈衝,可能需要由不同參考緩衝器來驅動數位至類比轉換器之MDAC及LDAC部分(即,解耦LDAC與MDAC,以避免由切換LDAC所引起的尖峰,透過驅動MDAC之參考電壓而耦接至DAC之類比輸出)。因此,在第7A圖之電路中,負載電路740可代表MDAC,而負載電路750可代表LDAC。這種安排可將驅動LDAC之緩衝器與驅動MDAC之緩衝器分隔開。因此,當LDAC進行切換時(位元9至14),將在其本身之參考緩衝器(NMOS709及電阻721)上產生尖峰,以及在驅動MDAC之緩衝器(NMOS708及電阻720)上產生相當小的尖峰。此二尖峰之相對大小受到多種因素影響,包括電容712之尺寸大小。電容愈大,則由一緩衝器至另一緩衝器之抑制度愈大,反之亦然。可藉由在NMOS電晶體708與709(與切換開關706同步運作)之閘極間配置一切換開關(未示出),來進一步改善抑制。在某些具體實施例中,進一步具有負載電路740及750所用之獨立接地回傳路徑(未示出)係有利的。Particular embodiments of reference circuit 700 may facilitate driving a step-by-step approach to a switched capacitor DAC in an A/D converter (and similar circuitry). For example, a DAC can be implemented as a combination of two (or more) low resolution switched capacitor DACs that are capacitively coupled to one another (not shown) as is known in the art. An example of such a DAC is a 14-bit DAC that combines an 8-bit MDAC (for converting bits 1 through 8) and a 6-bit LDAC (for converting bits 9 through 14). However, in this configuration, since the LDAC system capacitor is coupled to the MDAC, the LDAC may draw more current than indicated by its weighting factor (eg, compare bits 9 and 4 in columns 7 and 7 of Figure 7B). It describes the charge attracted by the charge of a true binary-weighted DAC (column 3) in combination with the aforementioned MDAC-LDAC (column 4), the difference between the two charges). Due to the voltage spike caused by switching the load circuit, the amount of charge attracted by the load circuit generally increases. As shown in column 4 of Figure 7B, since LDAC attracts a significant charge pulse, it may be necessary to drive the digital to analog converter's MDAC and LDAC sections with different reference buffers (ie, decouple LDAC and MDAC to avoid The spike caused by switching LDAC is coupled to the analog output of the DAC by driving the reference voltage of the MDAC. Thus, in the circuit of Figure 7A, load circuit 740 can represent MDAC and load circuit 750 can represent LDAC. This arrangement separates the buffer that drives the LDAC from the buffer that drives the MDAC. Therefore, when LDAC is switched (bits 9 through 14), spikes are generated on its own reference buffers (NMOS 709 and resistor 721) and relatively small on the buffers that drive MDAC (NMOS 708 and resistor 720). The spike. The relative size of the two spikes is affected by a number of factors, including the size of the capacitor 712. The larger the capacitance, the greater the suppression from one buffer to the other, and vice versa. The suppression can be further improved by arranging a switch (not shown) between the gates of the NMOS transistors 708 and 709 (which operate in synchronization with the switch 706). In some embodiments, it is advantageous to have separate ground return paths (not shown) for use with load circuits 740 and 750.
根據本發明之一態樣建構的另一驅動器電路實施例,為第8圖所示之「有限餘隙」拓撲。此具體實施例可有效用於所想要的輸出參考電壓僅稍微比提供至電路的供應電壓VDD 低一些的情況。此限制可能發生在需要操作在一低供應電壓之應用中。此外,在某些應用中,較需要使用一大參考電壓(例如,以達成所要的高訊雜比),其主要係被可用供應電壓VDD 所限制。供應電壓超過參考電壓之量,可稱為「餘隙(“headroom”)」。第8圖例示說明當餘隙為有限時,如何依據本發明之一態樣來實現驅動器電路800。Another embodiment of the driver circuit constructed in accordance with an aspect of the present invention is the "finite clearance" topology shown in FIG. This particular embodiment can be effectively used where the desired output reference voltage is only slightly lower than the supply voltage V DD provided to the circuit. This limitation can occur in applications that require operation at a low supply voltage. In addition, in some applications, it is more desirable to use a large reference voltage (eg, to achieve the desired high signal-to-noise ratio), which is primarily limited by the available supply voltage V DD . The supply voltage exceeds the reference voltage and can be called "headroom". Figure 8 illustrates how the driver circuit 800 can be implemented in accordance with one aspect of the present invention when the clearance is limited.
如圖所示,電路800與電路200在多方面相類似,二者所包括之組件及功能性方塊,一般具有類似編號以代表類似功能性及大致對應關係。例如,參考電路800一般包括一放大器電路802、NMOS電晶體804及808、切換元件806、選擇性電阻807、電容810及812、及電阻818及820(對應第2圖之放大器電路202、NMOS電晶體204及208、切換元件206、選擇性電阻207、電容210及212、及電阻218及220)。As shown, circuit 800 and circuit 200 are similar in many respects, and the components and functional blocks included therein generally have similar numbers to represent similar functionality and general correspondence. For example, the reference circuit 800 generally includes an amplifier circuit 802, NMOS transistors 804 and 808, a switching element 806, a selective resistor 807, capacitors 810 and 812, and resistors 818 and 820 (corresponding to the amplifier circuit 202 and NMOS of FIG. 2). Crystals 204 and 208, switching element 206, selective resistor 207, capacitors 210 and 212, and resistors 218 and 220).
此外,電路800包括電阻809、電容813及切換開關814及815,可用於(由放大器802)推動提供至電晶體808之閘極的偏壓。因此,在操作上,切換開關806、電容812-813及切換開關814-815構成一電壓推動器隔離電路,其提供一推動偏壓至電晶體808之閘極。此外,雖然圖中未示出,但與前述類似的切換式電容負載電路可耦接至VOUT 。In addition, circuit 800 includes a resistor 809, a capacitor 813, and switches 814 and 815 that can be used (by amplifier 802) to bias the bias provided to the gate of transistor 808. Thus, in operation, switch 806, capacitors 812-813, and switch 814-815 form a voltage pusher isolation circuit that provides a push bias to the gate of transistor 808. Further, although not shown in the drawings, a switched capacitive load circuit similar to the foregoing may be coupled to V OUT .
在操作上,放大器802之輸出係由一輸入電壓VIN 所建立,該輸入電壓係提供至放大器802之非反相端。如此可設定參考電路800之輸出端所產生的電壓。然而,在電路800中,輸入電壓可為切換期間之輸出端上所想要的參考電壓VOUT 的一預定比例部分。此預定比值為電路800之電壓增加「推動因子(boosting factor)」之倒數。Operationally, the output of amplifier 802 is established by an input voltage V IN that is provided to the non-inverting terminal of amplifier 802. The voltage generated at the output of the reference circuit 800 can thus be set. However, in circuit 800, the input voltage can be a predetermined proportion of the desired reference voltage VOUT at the output of the switching period. This predetermined ratio is the reciprocal of the "boosting factor" added to the voltage of circuit 800.
輸出電壓VOUT 基本上係與調整期間切換開關806關閉時所供應的輸入電壓VIN 相同。然而,在切換期間,當切換開關806打開時,輸出電壓VOUT 基本上將與輸入電壓VIN 乘上推動因子後所得之電壓值相同。在某些具體實施例中,於切換期間NMOS808之閘極上出現的電壓,可能超過供應電壓VDD 。The output voltage V OUT is substantially the same as the input voltage V IN supplied when the switch 806 is turned off during the adjustment. However, during the switching, when the switch 806 is turned on, the output voltage V OUT will be substantially the same as the voltage value obtained by multiplying the input voltage V IN by the push factor. In some embodiments, the voltage appearing on the gate of NMOS 808 during switching may exceed supply voltage V DD .
一種可達成此目的的方法,係藉由將耦接至NMOS804之電阻一分為二(818及809),且將耦接至NMOS808之電容一分為二(比較第2圖之電路200),並加入切換開關814及815。這些組件之總值可與組件210及212的相同或類似,但基於所想要的推動因子來分佈這些個別值。One method for achieving this is to divide the resistance coupled to the NMOS 804 into two (818 and 809) and divide the capacitance coupled to the NMOS 808 into two (compare the circuit 200 of FIG. 2). Switching switches 814 and 815 are added. The total value of these components may be the same or similar to components 210 and 212, but these individual values are distributed based on the desired push factor.
例如,電容812及813之總電容值相對於單一電容812之比值,可與推動因子相同。同樣的,電阻809及818之總電阻值相對於單一電阻818之比值,可與推動因子相同。此外,在某些具體實施例中,在連接至個別裝置來源端的獨立及個別P井區(P-well)中,實現NMOS804及808係有利的。For example, the ratio of the total capacitance of capacitors 812 and 813 to the single capacitor 812 can be the same as the boost factor. Similarly, the ratio of the total resistance of resistors 809 and 818 to a single resistor 818 can be the same as the boost factor. Moreover, in some embodiments, it is advantageous to implement NMOS 804 and 808 in separate and individual P-wells connected to the source end of the individual device.
因此,在一相位操作期間,例如一調整期間,切換開關806及814係關閉而切換開關815係打開。在此例中,放大器802之輸出電位係儲存在電容812及813中。接著,在切換期間或之前,切換開關806及814打開,而切換開關815關閉,使電路800之輸出電壓VOUT 基本上等同所供應的輸入電壓VIN 乘上預定的推動因子。Thus, during a phase operation, such as during an adjustment, switches 806 and 814 are closed and switch 815 is open. In this example, the output potential of amplifier 802 is stored in capacitors 812 and 813. Next, during or prior to switching, toggle switches 806 and 814 are open, and switch 815 is turned off, causing output voltage V OUT of circuit 800 to be substantially equal to the supplied input voltage V IN multiplied by a predetermined push factor.
然而,在某些具體實施例中,電路800如三階段系統來運作係有利的。在此一系統中,於一第一階段期間,切換開關806及814係關閉而切換開關815係打開。在此第一階段期間,輸出電壓VOUT 可能比切換期間(第三階段)提供的輸出電壓還低。在第二階段,切換開關806及814打開而切換開關815關閉。在此階段,負載電路不切換,且可斷接驅動器電路800。在此第二階段,輸出電壓VOUT 可設置成與輸入電壓VIN 乘上預定推動因子後相同的一電壓值。在第三階段,切換開關806及814打開而切換開關815也同樣打開。於此第三階段期間,負載電路可連接至VOUT 且進行切換一或多次(導致一或多瞬時變化發生於VOUT ),然後程序重覆由第一階段重新開始。However, in some embodiments, the operation of circuit 800 as a three-stage system is advantageous. In this system, during a first phase, toggle switches 806 and 814 are closed and switch 815 is open. During this first phase, the output voltage V OUT may be lower than the output voltage provided during the switching (third phase). In the second phase, the toggle switches 806 and 814 are open and the toggle switch 815 is closed. At this stage, the load circuit does not switch and the driver circuit 800 can be disconnected. In this second phase, the output voltage V OUT can be set to the same voltage value after the input voltage V IN is multiplied by a predetermined push factor. In the third phase, the toggle switches 806 and 814 are open and the toggle switch 815 is also turned on. During this third phase, the load circuit can be connected to V OUT and switched one or more times (resulting in one or more transient changes occurring at V OUT ), and then the program repeats restarting from the first phase.
此外,在本發明某些具體實施例中,若需要,可使用一充電幫浦電路(未示出),以產生超過VDD 之供應電壓用以供應放大器802,使得當餘隙小時,其可產生用以驅動NMOS808可能所需要的超過VDD 之輸出電壓。在此具體實施例中,電容813、切換開關815及814、及電阻809可移除(即,若需要可使用類似電路200之實施例)。Moreover, in some embodiments of the present invention, a charge pump circuit (not shown) may be used to generate a supply voltage exceeding V DD for supplying the amplifier 802, if necessary, such that when the clearance is small, An output voltage exceeding V DD that may be required to drive the NMOS 808 is generated. In this particular embodiment, capacitor 813, switchers 815 and 814, and resistor 809 can be removed (i.e., embodiments of similar circuit 200 can be used if desired).
依據本發明之一態樣建構的另一電路具體實施例,係第9圖所例示的有限餘隙拓撲。此具體實施例可有效改善第8圖之參考驅動器電路800之功率供應斥拒比。一般來說,這是由於對提供至第9圖所示之NMOS電晶體904及908之汲極之電壓進行調整之緣故。使用此組態設定,供應電壓VDD 之波動可能對供應至NMOS電晶體904及908之汲極之電壓造成相當小的變異或不會造成任何變異。如此可進一步限制或抑制任何電壓尖峰由輸出緩衝電路透過供應電壓極VDD 而耦接至電壓控制迴路。Another circuit embodiment constructed in accordance with an aspect of the present invention is the finite-gap topology illustrated in FIG. This embodiment can effectively improve the power supply rejection ratio of the reference driver circuit 800 of FIG. Generally, this is due to the adjustment of the voltage supplied to the drains of the NMOS transistors 904 and 908 shown in FIG. With this configuration setting, fluctuations in the supply voltage V DD may cause relatively small variations or no variations in the voltages supplied to the drains of the NMOS transistors 904 and 908. This can further limit or inhibit any voltage spikes from being coupled to the voltage control loop by the output buffer circuit through the supply voltage pole V DD .
如圖所示,驅動器電路900與電路800在多方面相類似,二者所包括之組件及功能性方塊,一般具有類似編號以代表類似功能性及大致對應關係。例如,參考電路900一般包括一放大器電路902、NMOS電晶體904及908、切換開關906、914及915、選擇性電阻907、電容912及913、及電阻918及920(對應第8圖之放大器電路802、NMOS電晶體804及808、切換開關806、814及815、選擇性電阻807、電容812及813、及電阻818及820)。放大器902之頻率補償(第8圖之電容810)未明確示於第9圖中。As shown, driver circuit 900 is similar in many respects to circuit 800, and the components and functional blocks included therein generally have similar numbers to represent similar functionality and general correspondence. For example, the reference circuit 900 generally includes an amplifier circuit 902, NMOS transistors 904 and 908, switch 906, 914 and 915, a selective resistor 907, capacitors 912 and 913, and resistors 918 and 920 (corresponding to the amplifier circuit of FIG. 8). 802, NMOS transistors 804 and 808, switchers 806, 814 and 815, selective resistor 807, capacitors 812 and 813, and resistors 818 and 820). The frequency compensation of amplifier 902 (capacitor 810 of Figure 8) is not explicitly shown in Figure 9.
此外,電路900包括放大器電路905、NMOS電晶體960、962及964、切換開關970、選擇性電阻977、電容972及974、及電阻909、919、980及982。此外,雖然圖中未示出,然而一類似前述之切換式電容負載電路可耦接至驅動器電路之輸出VOUT 。In addition, circuit 900 includes amplifier circuit 905, NMOS transistors 960, 962, and 964, switch 970, selective resistor 977, capacitors 972 and 974, and resistors 909, 919, 980, and 982. Moreover, although not shown in the drawings, a switched capacitive load circuit similar to that described above can be coupled to the output V OUT of the driver circuit.
在操作上,放大器電路905提供一電位,此電位保證橫跨NMOS電晶體904之汲極及源極端之電壓大致固定。NMOS電晶體960與962及電阻980與982可大致相同,或被調整成相互間具有預定之比例關係。類似的,電阻919及918亦可大致相同,或以相同之預定比例關係進行調整。In operation, amplifier circuit 905 provides a potential that ensures that the voltage across the drain and source terminals of NMOS transistor 904 is substantially constant. NMOS transistors 960 and 962 and resistors 980 and 982 may be substantially identical or adjusted to have a predetermined proportional relationship to each other. Similarly, resistors 919 and 918 can also be substantially identical or adjusted in the same predetermined proportional relationship.
電路900中實現一負回授迴路,以確保放大器902及905之反相輸入端之電位大致與固定輸入電壓VIN 相同。因此,橫跨電阻918及919之電壓將大致相同,而因此NMOS電晶體960及962將傳導大致相同之電流(或電流將以預定比例調整)。結果,電晶體960及962之源極之電位將大致相同。A negative feedback loop is implemented in circuit 900 to ensure that the potential of the inverting inputs of amplifiers 902 and 905 is substantially the same as the fixed input voltage V IN . Thus, the voltage across resistors 918 and 919 will be substantially the same, and thus NMOS transistors 960 and 962 will conduct substantially the same current (or the current will be adjusted at a predetermined ratio). As a result, the potentials of the sources of transistors 960 and 962 will be substantially the same.
此外,如前述之說明,放大器902及905之反相輸入端之電位將大致相同。結果,若電路900經適當調整,則橫跨電阻909之電壓將大致與橫跨NMOS電晶體904之汲極至源極電壓相同。因此,可藉由相對於電阻919來調整電阻909,來選擇橫跨NMOS電晶體904之電壓,且此電壓基本上不受到供應電壓VDD 的影響。Moreover, as explained above, the potentials of the inverting inputs of amplifiers 902 and 905 will be substantially the same. As a result, if circuit 900 is properly adjusted, the voltage across resistor 909 will be substantially the same as the drain-to-source voltage across NMOS transistor 904. Therefore, the voltage across the NMOS transistor 904 can be selected by adjusting the resistor 909 with respect to the resistor 919, and this voltage is substantially unaffected by the supply voltage V DD .
由於切換負載電路,而引發來自供應電壓極VDD 的電流脈衝,此電流脈衝可造成瞬時變化於供應電壓極VDD 上。VDD 上的瞬時變化可由放大器905抑制,因放大器905可改善電路的輸出電壓VOUT 之總電壓調整(比較其它單一放大器實施例)。Due to switching of the load circuit, a current pulse from the supply voltage pole V DD is induced, which can cause a transient change in the supply voltage pole V DD . The instantaneous change in V DD can be suppressed by amplifier 905 because amplifier 905 can improve the overall voltage regulation of the output voltage V OUT of the circuit (compare other single amplifier embodiments).
在操作上,切換開關970可與切換開關906同步運作。在調整期間,切換開關970、906及914可關閉,而切換開關915可打開。此時,儲存在與NMOS964之閘極相連接之電容972及974上之電位,大。致與放大器905提供之電位相同。同樣的,且類似前述驅動器電路800之運作,儲存在與NMOS908之閘極相連接之電容912及913上之電位,大致與放大器902提供之電位相同。因此,在調整期間,橫跨NMOS908之汲極至源極電壓可大致與橫跨NMOS904之汲極至源極電壓相同,且可部分藉由如前述調整電阻909來選擇電壓。In operation, the diverter switch 970 can operate in synchronization with the diverter switch 906. During the adjustment, the diverters 970, 906, and 914 can be turned off, and the diverter switch 915 can be turned on. At this time, the potential stored in the capacitors 972 and 974 connected to the gate of the NMOS 964 is large. The potential is the same as that provided by amplifier 905. Similarly, and similar to the operation of the driver circuit 800 described above, the potential stored on the capacitors 912 and 913 connected to the gate of the NMOS 908 is substantially the same as the potential provided by the amplifier 902. Thus, during regulation, the drain-to-source voltage across NMOS 908 can be substantially the same as the drain-to-source voltage across NMOS 904, and the voltage can be selected in part by adjusting resistor 909 as previously described.
此外,在切換期間,切換開關970、960及914可打開,而切換開關915可關閉。打開的切換開關906及970基本上隔離儲存在與NMOS904及908之閘極相連接之節點上之電荷。雙態切換開關914及915大致與打開的切換開關970及906同步(或於其之後立即動作),來推動NMOS電晶體908及970之閘極上電位。因此,與前述之驅動器電路800之運作類似,輸出電壓VOUT 可大致與輸入電壓VIN 乘上一預定推動因子後之值相同。如此處針對驅動器電路800之說明,可至少部分藉由選擇電容913及912之比值,來選擇推動因子。可選擇電容974及972其具有與電容913及912大致相同之比值。驅動器電路900及特別是電容912、913、972及974,可經調整使得在切換期間橫跨NMOS908之汲極至源極電壓係大致與NMOS904之汲極至源極電壓相同。Further, during the switching, the changeover switches 970, 960, and 914 can be turned on, and the changeover switch 915 can be turned off. The open switches 906 and 970 substantially isolate the charge stored at the nodes connected to the gates of NMOS 904 and 908. The toggle switches 914 and 915 are substantially synchronized (or immediately after) with the open switches 970 and 906 to push the potentials on the gates of the NMOS transistors 908 and 970. Thus, similar to the operation of the driver circuit 800 described above, the output voltage V OUT can be substantially the same as the input voltage V IN multiplied by a predetermined push factor. As described herein for driver circuit 800, the boost factor can be selected, at least in part, by selecting the ratio of capacitances 913 and 912. Capacitors 974 and 972 can be selected to have substantially the same ratio as capacitors 913 and 912. Driver circuit 900 and, in particular, capacitors 912, 913, 972, and 974, can be adjusted such that the drain-to-source voltage across NMOS 908 during switching is substantially the same as the drain-to-source voltage of NMOS 904.
在切換期間,NMOS電晶體964可確保NMOS之汲極電壓已減少與供應電壓極VDD 上正確電壓之依賴性,或確保與其大致無關。如此係有利的,因為其它電路(第9圖未示出)可能導致供應電壓極VDD 上發生尖峰,而干擾輸出參考電壓VOUT 。因此,第9圖所示之驅動器電路900,提供改良的功率供應斥拒比,且可針對預期功率供應極會發生尖峰之情況提供優良效能。During switching, the NMOS transistor 964 ensures that the NMOS drain voltage has decreased or is dependent on the correct voltage on the supply voltage pole V DD , or that it is substantially independent of it. This is advantageous because other circuits (not shown in Figure 9) may cause spikes on the supply voltage pole V DD and interfere with the output reference voltage V OUT . Thus, the driver circuit 900 shown in FIG. 9 provides an improved power supply rejection ratio and provides excellent performance for situations where peak power is expected to occur.
將瞭解到,驅動器電路900可運作成三階段系統,類似於前述之電路800。電阻907及977二者皆為可選擇的,且在某些具體實施例中,可包含這些電阻之一或二者。此外,在某些具體實施例中,當同時包含電阻907及977時,二電阻可經調整以使得電阻907基本上比電阻977還大。It will be appreciated that the driver circuit 900 can operate as a three-stage system, similar to the circuit 800 described above. Both resistors 907 and 977 are optional, and in some embodiments, one or both of these resistors may be included. Moreover, in some embodiments, when resistors 907 and 977 are included, the two resistors can be adjusted such that resistor 907 is substantially larger than resistor 977.
雖然本發明之較佳具體實施例已以各種電路(連接至其它電路)來揭露,然而本領域之習知技藝人士將認知到,在不悖離本發明之精神下,可不需要直接之連結且額外電路可連接於所示電路間。此外,雖然本發明係以類比至數位及數位至類比轉換器之架構來進行說明,將瞭解到其可應用至任何需要提供經調整電壓至負載卻會經歷偏壓調變之電路或應用中(例如,任何電抗性負載、電阻性負載等)。此外,雖然本發明例示於某些特定部分使用特定或通用切換開關,將瞭解到可使用任何合適的切換開關,包括(例不限於此)基於二極體、場效、閘隔離及任何類型之電晶體、半導體裝置或非半導體類型之切換開關。Although the preferred embodiment of the present invention has been disclosed in terms of various circuits (connected to other circuits), those skilled in the art will appreciate that no direct connection may be required without departing from the spirit of the invention. Additional circuitry can be connected between the circuits shown. Moreover, while the present invention has been described in terms of an analog to digital and digital to analog converter architecture, it will be appreciated that it can be applied to any circuit or application that requires a regulated voltage to the load but undergoes a bias modulation ( For example, any reactive load, resistive load, etc.). Moreover, although the invention exemplifies the use of specific or universal switching switches in certain specific portions, it will be appreciated that any suitable switching switch can be used, including, by way of example and not limitation, diode-based, field effect, gate isolation, and any type of A transistor, a semiconductor device or a non-semiconductor type of switch.
此外,將瞭解到此處所述之各種實施例例示補充技術,且若需要可由電路設計者進行相互合併,以取得效益。例如,第6圖所示之電路可結合第7A及9圖等。同樣的,且僅作為另一實施例,針對電路900使用輔助性控制迴路來調整汲極電壓,此作法可結合其它所述實施例,且亦可有利地將其和許多其它實施例相結合,以併入本發明之其它態樣。本領域之習知技藝人士將瞭解到,所述具體實施例之許多變型及結合係包含於本發明範圍內,以取得此處所述及示範的各種利益。In addition, it will be appreciated that the various embodiments described herein exemplify complementary techniques and can be combined by circuit designers if desired to achieve benefits. For example, the circuit shown in Fig. 6 can be combined with the 7A and 9th drawings and the like. Similarly, and as just another embodiment, an auxiliary control loop is used for circuit 900 to adjust the drain voltage, which may be combined with other described embodiments, and may be advantageously combined with many other embodiments. In order to incorporate other aspects of the invention. It will be appreciated by those skilled in the art that many variations and combinations of the specific embodiments are included within the scope of the present invention.
此外將瞭解到,將NMOS204、604、704、804及904(分別出現在第2、6、7、8及9圖中)結合電阻218、618、718、818及918(分別出現在第2、6、7、8及9圖中)以及放大器202、602、702、802及902(分別出現在第2、6、7、8及9圖中),如此僅為一範例方法以實現一控制系統,其於調整期間提供一電壓用於偏壓輸出裝置208、608、708、808及908(分別出現在第2、6、7、8及9圖中)之閘極。本領域之習知技藝人士將瞭解到,電位複製(即,分別出現在第2、6、7、8及9圖中之NMOS204、604、704、804及904之源極之電位)不需要建立於該控級系統中。It will also be appreciated that the NMOSs 204, 604, 704, 804, and 904 (shown in Figures 2, 6, 7, 8 and 9, respectively) are combined with resistors 218, 618, 718, 818, and 918 (shown in the second, respectively. 6, 7, 8, and 9) and amplifiers 202, 602, 702, 802, and 902 (shown in Figures 2, 6, 7, 8, and 9, respectively), so that is only an example method to implement a control system It provides a voltage during the adjustment period for the gates of the bias output devices 208, 608, 708, 808, and 908 (shown in Figures 2, 6, 7, 8 and 9, respectively). Those skilled in the art will appreciate that potential reproduction (i.e., the potentials of the sources of NMOSs 204, 604, 704, 804, and 904, respectively appearing in Figures 2, 6, 7, 8 and 9) need not be established. In the control system.
在某些併入本發明精神之具體實施例中,例如,控制系統可併入一電路分支,其具有一序列切換開關連接至緩衝電路之輸出(即,連接至分別出現在第2、6、7、8及9圖中之NMOS208、608、708、808及908),其中於切換期間切換開關可打開,以避免或減少輸出端之電壓尖峰影響控制系統之程度。在本發明之這些實施例中,控制系統可併入經組態設定且操作(至少部分)成積分電路之電路系統。In certain embodiments incorporating the spirit of the present invention, for example, the control system can incorporate a circuit branch having a sequence of diverter switches coupled to the output of the buffer circuit (ie, connected to the second, sixth, respectively, NMOS 208, 608, 708, 808 and 908) in Figures 7, 8 and 9, wherein the switching switch can be turned on during switching to avoid or reduce the extent to which voltage spikes at the output affect the control system. In these embodiments of the invention, the control system can incorporate circuitry that is configured to configure and operate (at least in part) into an integrating circuit.
此外,雖然此處之實施例已在電壓訊號之架構下進行說明,然而將瞭解到在其它實施例中,這些電壓訊號可以電流訊號、電荷訊號或其它電性能源訊號(配合適當能源儲存裝置)來替代,而不致悖離本發明之精神及範圍。In addition, although the embodiments herein have been described in the context of a voltage signal, it will be appreciated that in other embodiments, these voltage signals can be current signals, charge signals, or other electrical energy signals (in conjunction with appropriate energy storage devices). Instead of departing from the spirit and scope of the invention.
本領域之習知技藝人士將認知到,本發明可由本說明書描述之特定實施例之外的其它實施例來實現。所描述之具體實施例僅係作為例示說明用,不應視為具有限制性,而本發明之權利範圍僅由以下之申請專利範圍限定。Those skilled in the art will recognize that the present invention can be implemented by other embodiments than the specific embodiments described herein. The specific embodiments described are intended to be illustrative only and are not to be considered as limiting.
200...電壓參考驅動器電路200. . . Voltage reference driver circuit
202...放大器電路202. . . Amplifier circuit
204、208...NMOS電晶體204, 208. . . NMOS transistor
206、244...切換開關206, 244. . . Toggle switch
207...電阻207. . . resistance
210、212、242...電容210, 212, 242. . . capacitance
22
14、216、218、220...電晶體14,216, 218, 220. . . Transistor
232...反相端232. . . Inverting end
234...非反相端234. . . Non-inverting end
236...輸出端236. . . Output
240...負載電路240. . . Load circuit
600...電壓參考驅動器電路600. . . Voltage reference driver circuit
602...放大器電路602. . . Amplifier circuit
604、608...NMOS電晶體604, 608. . . NMOS transistor
606、630、632、644、646...切換開關606, 630, 632, 644, 646. . . Toggle switch
607、615、616、617、618、620...電阻607, 615, 616, 617, 618, 620. . . resistance
610、612、642...電容610, 612, 642. . . capacitance
636...輸出端636. . . Output
640...負載電路640. . . Load circuit
700...電壓參考驅動器電路700. . . Voltage reference driver circuit
702...放大器電路702. . . Amplifier circuit
704、708、709...NMOS電晶體704, 708, 709. . . NMOS transistor
706、744、746、754、756...切換開關706, 744, 746, 754, 756. . . Toggle switch
707、718、720、721...電阻707, 718, 720, 721. . . resistance
710、712、742、752...電容710, 712, 742, 752. . . capacitance
740、750...負載電路740, 750. . . Load circuit
800...電壓參考驅動電路800. . . Voltage reference drive circuit
802...放大器電路802. . . Amplifier circuit
804、808...NMOS電晶體804, 808. . . NMOS transistor
806、814、815...切換開關806, 814, 815. . . Toggle switch
807、809、818、820...電阻807, 809, 818, 820. . . resistance
810、812、813...電容810, 812, 813. . . capacitance
900...電壓參考驅動電路900. . . Voltage reference drive circuit
902、905...放大器電路902, 905. . . Amplifier circuit
904、908、960、962、964...NMOS電晶體904, 908, 960, 962, 964. . . NMOS transistor
906、914、915、970...切換開關906, 914, 915, 970. . . Toggle switch
907、909、918、920、919、977、980、982...電阻907, 909, 918, 920, 919, 977, 980, 982. . . resistance
912、913、972、974...電容912, 913, 972, 974. . . capacitance
本發明之前述及其它目標與優點,配合所附圖式及以上的「實施方式」之說明係為顯而易見,於所有圖式中相同的元件符號係指相同的元件,且其中:The above and other objects and advantages of the present invention will be apparent from the description of the appended claims.
第1圖為一範例圖,其例示說明一習知電壓參考電路,此習知電路由於參考電壓偏移而對一ADC之輸出造成不利的影響:FIG. 1 is an exemplary diagram illustrating a conventional voltage reference circuit that adversely affects the output of an ADC due to a reference voltage offset:
第2圖為依據本發明原則所建立的一電壓參考驅動器電路之具體實施例簡圖;2 is a schematic diagram of a specific embodiment of a voltage reference driver circuit established in accordance with the principles of the present invention;
第3圖為一電壓尖峰例示說明圖,該尖峰係由一切換式電容負載於切換期間所引起,且發生於電壓參考驅動器電路之輸出;Figure 3 is a diagram illustrating an example of a voltage spike caused by a switched capacitive load during switching and occurring at the output of the voltage reference driver circuit;
第4圖係在與第1圖大致相同條件下,對第2圖之ADC之輸出的改良例示圖;Fig. 4 is a view showing an improved example of the output of the ADC of Fig. 2 under substantially the same conditions as those of Fig. 1;
第5圖為一時序圖,其例示說明第2圖之參考電路之一操作模式;Figure 5 is a timing diagram illustrating one mode of operation of the reference circuit of Figure 2;
第6圖為依據本發明原則所建立的一電壓參考驅動器電路之另一具體實施例簡圖;Figure 6 is a block diagram showing another embodiment of a voltage reference driver circuit constructed in accordance with the principles of the present invention;
第7A圖為依據本發明原則所建立的一電壓參考驅動器電路之另一具體實施例簡圖;Figure 7A is a block diagram showing another embodiment of a voltage reference driver circuit constructed in accordance with the principles of the present invention;
第7B圖為一表,其說明加權因子及由一真二元加權電荷調整DAC與經分割電荷調整DAC二者所吸引的電荷。Figure 7B is a table illustrating the weighting factors and the charge attracted by both a true binary weighted charge adjustment DAC and a split charge adjustment DAC.
第8圖為依據本發明原則所建立的一電壓參考驅動器電路之另一具體實施例簡圖;Figure 8 is a block diagram showing another embodiment of a voltage reference driver circuit constructed in accordance with the principles of the present invention;
第9圖為依據本發明原則所建立的一電壓參考驅動器電路之又另一具體實施例簡圖Figure 9 is a block diagram showing still another embodiment of a voltage reference driver circuit constructed in accordance with the principles of the present invention.
200...電壓參考驅動器電路200. . . Voltage reference driver circuit
202...放大器電路202. . . Amplifier circuit
204、208...NMOS電晶體204, 208. . . NMOS transistor
206、244...切換開關206, 244. . . Toggle switch
207...電阻207. . . resistance
210、212、242...電容210, 212, 242. . . capacitance
214、216、218、220...電晶體214, 216, 218, 220. . . Transistor
232...反相端232. . . Inverting end
234...非反相端234. . . Non-inverting end
236...輸出端236. . . Output
240...負載電路240. . . Load circuit
Claims (58)
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| JP5600881B2 (en) * | 2009-03-06 | 2014-10-08 | セイコーエプソン株式会社 | DC-DC converter circuit, electro-optical device, and electronic apparatus |
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-
2008
- 2008-10-09 US US12/287,623 patent/US7907074B2/en not_active Expired - Fee Related
- 2008-11-06 TW TW097142931A patent/TWI446139B/en not_active IP Right Cessation
- 2008-11-07 EP EP08168692.5A patent/EP2184858B8/en not_active Not-in-force
- 2008-11-07 EP EP13005146.9A patent/EP2713511B1/en not_active Not-in-force
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|---|---|
| TW200935205A (en) | 2009-08-16 |
| US7907074B2 (en) | 2011-03-15 |
| EP2184858A3 (en) | 2012-12-05 |
| EP2184858B1 (en) | 2017-04-05 |
| EP2713511A3 (en) | 2015-08-12 |
| EP2184858A2 (en) | 2010-05-12 |
| US20090121912A1 (en) | 2009-05-14 |
| EP2184858B8 (en) | 2017-07-05 |
| EP2184858A8 (en) | 2010-08-04 |
| EP2713511A2 (en) | 2014-04-02 |
| EP2713511B1 (en) | 2018-04-25 |
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