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TWI444614B - Micro X-ray measuring device - Google Patents

Micro X-ray measuring device Download PDF

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TWI444614B
TWI444614B TW100100931A TW100100931A TWI444614B TW I444614 B TWI444614 B TW I444614B TW 100100931 A TW100100931 A TW 100100931A TW 100100931 A TW100100931 A TW 100100931A TW I444614 B TWI444614 B TW I444614B
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measurement
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TW201142275A (en
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Asao Nakano
Katsuhiko Inaba
Masahiro Nonoguchi
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Rigaku C0Rporation
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/083Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • G21K5/02Irradiation devices having no beam-forming means
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/07Investigating materials by wave or particle radiation secondary emission
    • G01N2223/076X-ray fluorescence

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Description

微小部X線計測裝置Micro-section X-ray measuring device

本發明係關於由根據光學顯微鏡的座標計測來決定位置,即使搭載著試樣而基板(基材)所包含的元素與試樣所含的元素為相同,也可以進行安定的微小部分的計測之微小部X線計測裝置。According to the present invention, the position is determined by the coordinate measurement by the optical microscope, and even if the element contained in the substrate (substrate) is the same as the element contained in the sample, the measurement of the minute portion can be performed. Micro-section X-ray measuring device.

關於大塊試樣的微小部分或被搭載於各種基板的微小試樣的測定方法,例如已有顯微紅外線分光法、顯微拉曼分光法、電子束激發螢光X線分析法等種種方法被開發出來。其中,以紅外線分光法與拉曼分光法,特別適用於有機材料的計測。此外,電子束分析法一般應用於無機材料或金屬的計測,特別是藉由在真空中之計測,即使鋁(Al)這種輕元素也可以計測,所以被廣泛使用。然而,在電子束分析法,有必要將試樣插入真空中,所以不容易提高計測的處理能力,同時特別是要適用於大型的試樣或者大型基板上的試樣之計測是很困難的。Various methods such as microscopic infrared spectroscopy, micro-Raman spectroscopy, and electron beam-excited fluorescent X-ray analysis are used for measuring a small portion of a large sample or a small sample mounted on various substrates. Was developed. Among them, infrared spectroscopy and Raman spectroscopy are particularly suitable for the measurement of organic materials. Further, the electron beam analysis method is generally applied to the measurement of inorganic materials or metals, and in particular, it can be widely used even if it is measured in a vacuum, even if a light element such as aluminum (Al) can be measured. However, in the electron beam analysis method, it is necessary to insert the sample into a vacuum, so that it is not easy to improve the processing capability of the measurement, and it is particularly difficult to measure the sample on a large sample or a large substrate.

對此,從前例如以下的專利文獻1也記載著,為了半導體製造步驟之成膜控制,開發出以微小部的計測為目的之企圖達成高感度/高計測處理速度之X線計測裝置。在此專利文獻1的裝置,為了在高精度下控制膜厚,在進行計測的一點(微小部)之計測時間需要5秒~20秒程度,必須要花比較長的時間。另一方面,如以下之專利文獻2、專利文獻3或專利文獻4所知的,已開發出併用光學計測與X線計測的裝置,但在重視根據光學顯微鏡的計測的裝置,於X線計測部分不使用光學元件,不考慮螢光X線的發生效率或是來自基板的背景雜訊,所以特別是對微小金屬之計測能力,只有微克到毫克程度而已,毫微克(nanogram)程度的微小量之金屬計測是不可能的。In the past, for example, Patent Document 1 below discloses that an X-ray measuring device that attempts to achieve high sensitivity/high measurement processing speed for the purpose of measurement of a minute portion has been developed for the film formation control of the semiconductor manufacturing step. In the apparatus of Patent Document 1, in order to control the film thickness with high precision, it takes about 5 seconds to 20 seconds to measure the point (micro portion) of the measurement, and it takes a relatively long time. On the other hand, as disclosed in the following Patent Document 2, Patent Document 3, or Patent Document 4, an apparatus for measuring optical measurement and X-ray measurement has been developed, but an apparatus for measuring by an optical microscope is emphasized, and X-ray measurement is performed. Some do not use optical components, regardless of the efficiency of the fluorescent X-rays or the background noise from the substrate, so especially for the measurement of tiny metals, only micrograms to milligrams, a small amount of nanograms Metal measurement is impossible.

[先前技術文獻][Previous Technical Literature]

[專利文獻][Patent Literature]

[專利文獻1]日本專利特開2006-153767號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-153767

[專利文獻2]國際公開公報WO2009/093341號小冊[Patent Document 2] International Publication WO2009/093341

[專利文獻3]日本專利特開2009-198485號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2009-198485

[專利文獻4]日本專利特開2009-258114號公報[Patent Document 4] Japanese Patent Laid-Open Publication No. 2009-258114

然而,大型的試樣,或者被搭載於大型基板的試樣的螢光X線計測,有必要在大氣中進行,然而這樣的場合,會有X線在大氣中衰減的問題。However, a large sample or a fluorescent X-ray measurement of a sample mounted on a large substrate needs to be performed in the atmosphere. However, in such a case, there is a problem that the X-ray is attenuated in the atmosphere.

此外,為了進行微小部分的X線測定,必須要將X線光束聚焦於微小的剖面積之X線光學元件,同時必須要有光學顯微鏡,進而,對此,還必須要針對包含螢光X線計測用的X線檢測器的配置去下工夫。In addition, in order to perform the X-ray measurement of a small portion, it is necessary to focus the X-ray beam on the X-ray optical element of a small cross-sectional area, and it is necessary to have an optical microscope, and further, it must be directed to the inclusion of the fluorescent X-ray. The configuration of the X-ray detector for measurement is taken down.

為此,在本發明,係有鑑於前述先前技術之問題點而達成之發明,其目的在於提供即使被搭載著試樣的基板(基材)所包含的元素,與該試樣所含的元素為相同,也可以進行安定的微小部分的成分計測之微小部X線計測裝置。Therefore, the present invention has been made in view of the problems of the prior art described above, and an object thereof is to provide an element contained in a substrate (substrate) on which a sample is mounted, and an element contained in the sample. In the same manner, it is also possible to perform a minute-part X-ray measuring device for measuring the composition of a small portion of stability.

本發明,如前所述,係有鑑於對大型的試樣,或者被搭載於大型的基板(基材)的試樣的螢光X線計測,有在大氣中進行的必要而達成的發明,特別是藉由以下所述之根據發明人的知識與見解而達成者。亦即,在大氣中進行螢光X線計測的場合,例如由輕元素之鋁(Al)所放出的螢光X線(特性X線能量為1.5keV),於大氣中每前進1mm就會衰減約20%。另一方面,由鐵(Fe)或銅(Cu)等過渡金屬元素所放出的螢光X線(特性X線能量分別為6.8keV、8.0keV),在大氣中前進數個mm程度的距離也幾乎不會衰減。亦即,如果把由試樣到檢測器的檢測元件為止的距離(螢光X線在大氣中的路徑(光徑))儘可能地縮短,例如設定為5mm以下的話,可以使1.5keV程度的螢光X線在大氣中的透過率達到30%程度,藉此,可以檢測出比鋁(Al)原子序更大的元素的螢光X線。In the present invention, as described above, in view of the measurement of a large sample or a fluorescent X-ray of a sample mounted on a large substrate (substrate), it is necessary to carry out the reaction in the atmosphere. In particular, it is achieved by the knowledge and insights of the inventors described below. In other words, in the case of performing fluorescent X-ray measurement in the atmosphere, for example, a fluorescent X-ray (characteristic X-ray energy of 1.5 keV) emitted from aluminum (Al) of a light element is attenuated every 1 mm in the atmosphere. About 20%. On the other hand, the fluorescent X-rays emitted from transition metal elements such as iron (Fe) or copper (Cu) (characteristic X-ray energies are 6.8 keV and 8.0 keV, respectively), and the distance in the atmosphere is several mm. Almost no attenuation. In other words, if the distance from the sample to the detecting element of the detector (the path (light path) of the fluorescent X-ray in the atmosphere) is shortened as much as possible, for example, if it is set to 5 mm or less, the degree of 1.5 keV can be made. The transmittance of the fluorescent X-ray in the atmosphere is as high as 30%, whereby the fluorescent X-ray of an element larger than the atomic order of aluminum (Al) can be detected.

為此,在本發明,根據前述之發明人的知識見解,為了達成前述目的,首先提供微小部X線計測裝置,其係具備:X線發生裝置、使由該X線發生裝置放出的X線在測定試樣上聚焦照射於50μm直徑以下的剖面積之X線光學元件、檢測由前述測定試樣所放出的螢光X線之X線檢測器、可攝影X線照射位置的光學影像的光學顯微鏡,以及可以使前述試樣二次元地掃描、定位,且以於高度方向上可以使空氣路徑成為5mm以下的方式調整其位置的試樣相對移動機構;可藉由根據前述光學顯微鏡之影像辨識機能,而進行前述試樣的特定位置之螢光X線計測,而且也可以計測來自被置於基材上的測定試樣的螢光X線的微小部X線計測裝置;使藉由前述X線光學元件聚焦照射於50μm直徑以下的剖面積之X線照射位置與前述X線檢測器之間的螢光X線的光徑,為抑制該螢光X線的衰減之構造,同時,進而具備備有即使被置於前述基材上的前述測定試樣包含與該基材相同的金屬元素,也可以判定出前述測定試樣含有該相同的金屬元素的資料處理機能之資料處理部。Therefore, according to the knowledge of the inventors mentioned above, in order to achieve the above object, first, a micro X-ray measuring device including an X-ray generating device and an X-ray emitted from the X-ray generating device is provided. An X-ray optical element that is focused on a cross-sectional area having a diameter of 50 μm or less on a measurement sample, an X-ray detector that detects a fluorescent X-ray emitted from the measurement sample, and an optical image of an optical image at a position where the X-ray irradiation is possible a microscope, and a sample relative movement mechanism capable of scanning and positioning the sample in a secondary direction and adjusting the position of the air path in a height direction of 5 mm or less; by image recognition according to the optical microscope described above Functionally, the X-ray measurement of the specific position of the sample is performed, and the X-ray measuring device of the fluorescent X-ray from the measurement sample placed on the substrate can be measured; The line optical element focuses on the optical path of the fluorescent X-ray between the X-ray irradiation position of the cross-sectional area of 50 μm or less and the X-ray detector, and is a structure for suppressing the attenuation of the X-ray of the fluorescent light. Further, in addition to the fact that the measurement sample placed on the substrate includes the same metal element as the substrate, it can be determined that the measurement sample contains the data processing function of the same metal element. unit.

此外,在本發明,於前述記載之微小部X線計測裝置,最好是使被聚焦照射於前述50μm直徑以下的剖面積之X線照射位置與前述X線檢測器之間的螢光X線的光徑成為真空,或者是使被聚焦照射於前述50μm直徑以下的剖面積之X線照射位置與前述X線檢測器之間的螢光X線的光徑,藉由氦氣(He)來置換。或者是,於前述X線發生裝置發生X線的金屬,最好是原子序24之鉻(Cr)、原子序42之鉬(Mo)至原子序47之銀(Ag)、或者原子序74之鎢(W)至原子序79之金(Au)為止之各元素的單體或者包含複數元素之合金或者層積膜,將前述X線光學元件的內部空間予以真空排氣或氦氣(He)置換為較佳。Further, in the present invention, it is preferable that the micro-part X-ray measuring device described above is a fluorescent X-ray between the X-ray irradiation position of the cross-sectional area that is focused and irradiated to the diameter of 50 μm or less and the X-ray detector. The optical path is a vacuum or an optical path of a fluorescent X-ray between the X-ray irradiation position of the cross-sectional area that is focused and irradiated to the 50 μm diameter or less and the X-ray detector, by helium (He). Replacement. Alternatively, the X-ray metal in the X-ray generating device is preferably chromium (Cr) of atomic order 24, molybdenum (Mo) of atomic order 42 to silver (Ag) of atomic order 47, or atomic order 74 a monomer of each element up to the gold (Au) of atomic order 79 or an alloy or a laminated film containing a plurality of elements, vacuum evacuating or helium (He) of the internal space of the aforementioned X-ray optical element Replacement is preferred.

此外,在本發明,於前述記載之微小部X線計測裝置,最好是藉由具有1個或複數個X線光子的能量辨別機能的半導體X線檢測元件來構成前述X線檢測器,進而,前述光學顯微鏡,最好是於該光學顯微鏡之中心軸,具備可插入前述X線檢測元件的孔,而且使該光學顯微鏡之光軸與照射X線束的中心軸為同軸。而且,最好是於前述光學顯微鏡使用卡塞格倫(Cassegrain)型之反射光學顯微鏡,於對向於前述試樣的副鏡面背面之照射X線光束與前述光學顯微鏡的光軸的同軸中心軸的周圍,具備單數或複數之X線檢測元件,進而,最好是具備抑制由前述試樣所發散/放出的螢光X線的發散角的手段。Further, in the above-described micro-part X-ray measuring apparatus, it is preferable that the X-ray detector is configured by a semiconductor X-ray detecting element having an energy discrimination function of one or a plurality of X-ray photons, and further Preferably, the optical microscope has a hole into which the X-ray detecting element can be inserted, and the optical axis of the optical microscope is coaxial with a central axis of the X-ray beam. Further, it is preferable that a reflection optical microscope of a Cassegrain type is used in the optical microscope to align the X-ray beam of the sub-mirror surface of the sample with the coaxial central axis of the optical axis of the optical microscope. The periphery is provided with a singular or plural X-ray detecting element, and further preferably, means for suppressing the divergence angle of the fluorescent X-rays emitted/released by the sample.

根據前述之本發明,可提供可以辨識大型試樣或者被搭載於大型基板的試樣的顯微鏡影像而螢光X線計測特定微小部分的元素,同時即使被搭載著試樣的基板(基材)所包含的元素,與該試樣所含的元素為相同,也可以進行安定的微小部分的成分計測之微小部X線計測裝置,於實用上發揮優異的效果。According to the present invention, it is possible to provide a microscope image in which a large sample or a sample mounted on a large substrate can be recognized, and an element of a specific minute portion is measured by a fluorescent X-ray, and a substrate (substrate) on which a sample is mounted is provided. The element included in the sample is the same as the element contained in the sample, and the micro-section X-ray measuring device capable of measuring the component of the stable minute portion exhibits an excellent effect in practical use.

以下,參照附圖詳細說明本發明之實施型態。Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[實施例1][Example 1]

圖1係顯示本發明之實施例1的X線計測裝置的全體構成之立體圖。於此處未圖示的筐體的內部,搭載著X線發生裝置1、X線檢測器3、以及光學顯微鏡4。於使在X線發生裝置1發生的X線聚焦於微小面積之用的X線光學元件2,使用聚合毛細管(Polycapillary)型之元件,而且將該聚合毛細管型之X線光學元件2直接安裝於X線發生裝置1。藉此,在X線發生裝置1發生的X線,藉由前述聚合毛細管型之X線光學元件2的作用,例如,被聚焦至50μm以下的微小剖面積,接著照射於被載置在試樣相對移動機構(移動台)6上的試樣5。又,對於前述X線發生裝置1及根據聚合毛細管型之X線光學元件2的X線的照射位置之前述試樣5的位置控制,係藉由試樣移動控制部61來進行的。Fig. 1 is a perspective view showing the overall configuration of an X-ray measuring device according to a first embodiment of the present invention. The X-ray generator 1, the X-ray detector 3, and the optical microscope 4 are mounted inside a casing (not shown). The X-ray optical element 2 for focusing the X-ray generated by the X-ray generator 1 on a small area is a polycapillary type element, and the X-ray optical element 2 of the polymerization capillary type is directly mounted on the X-ray optical element 2 X-ray generating device 1. In this way, the X-ray generated by the X-ray generator 1 is focused on a small cross-sectional area of 50 μm or less by the action of the polymeric capillary X-ray optical element 2, and then irradiated onto the sample. Relative to the sample 5 on the moving mechanism (mobile station) 6. Further, the position control of the sample 5 of the X-ray generator 1 and the X-ray irradiation position of the X-ray optical element 2 of the polymerization capillary type is performed by the sample movement control unit 61.

又,本實施例之聚合毛細管型之X線光學元件2,係具有於X線發生裝置1把鉬(Mo)金屬作為X線靶材產生X線而把對能量17.5keV的X線聚焦至15μm之直徑,把對能量8.0keV的X線聚焦至25μm之直徑的作用。此外,於X線發生裝置1作為發生X線的金屬靶材,亦可把由原子序42之前述的鉬(Mo)至原子序47之銀(Ag)、或者,原子序74之鎢(W)至原子序79之金(Au)為止之各元素,作為單體,或複數之合金或者層積膜來使用。Further, the X-ray optical element 2 of the polymerized capillary type of the present embodiment has the X-ray generating device 1 which generates X-rays using molybdenum (Mo) metal as an X-ray target and focuses X-rays with an energy of 17.5 keV to 15 μm. The diameter of the X-ray of energy 8.0 keV is focused to a diameter of 25 μm. Further, in the X-ray generating device 1 as the metal target in which the X-ray is generated, the aforementioned molybdenum (Mo) of the atomic order 42 may be added to the silver (Ag) of the atomic order 47 or the tungsten of the atomic order 74 (W). Each element up to the gold (Au) of the atomic sequence 79 is used as a monomer or a complex alloy or a laminated film.

此外,前述X線發生裝置1的加速電壓/電流,進而X線快門等之控制,係以X線發生控制部11來進行。此外,藉由前述聚合毛細管(Polycapillary)型之X線光學元件2而聚焦的X線的照射位置的確認,係藉由光學顯微鏡4來進行。亦即,由顯微鏡光源43射出的光,通過前述光學顯微鏡4被照射於試樣5,接著由該試樣5反射/散射的光,於被安裝在上述光學顯微鏡4的CCD單元42上成像為試樣影像,因而作為電氣訊號往顯微鏡控制部41傳送。Further, the acceleration voltage/current of the X-ray generator 1 and the control of the X-ray shutter and the like are performed by the X-ray generation control unit 11. Further, the confirmation of the irradiation position of the X-ray focused by the above-described polycapillary type X-ray optical element 2 is performed by the optical microscope 4. That is, the light emitted from the microscope light source 43 is irradiated onto the sample 5 by the optical microscope 4, and then the light reflected/scattered by the sample 5 is imaged on the CCD unit 42 mounted on the optical microscope 4 as The sample image is transmitted to the microscope control unit 41 as an electrical signal.

接著,未圖示的筐體,藉由終究未被圖示的位置控制機構,自由地選擇在三次元座標(參照圖之X-Y-Z)上的位置而設定為計測位置。其中,X-Y係基板之試樣5上的二次元座標,Z為筐體的高度,這是藉由該基板與光學顯微鏡4的焦點位置來進行調整。Next, the casing (not shown) is set to the measurement position by freely selecting the position on the ternary coordinate (see X-Y-Z in the drawing) by a position control mechanism (not shown). Here, the quadratic coordinates on the sample 5 of the X-Y substrate, Z is the height of the casing, which is adjusted by the focus position of the substrate and the optical microscope 4.

接著,使用附屬之圖2,說明成為實施例1的X線計測裝置之更為詳細的構造。於試樣5,藉由前述X線發生裝置1及X線光學元件2,照射X線。此時,在X線發生裝置1發生的X線,如前所述,藉由通過X線光學元件2,而被聚焦於小的照射面積。又,此X線光學元件2的內部,被排氣為真空,或者藉由氦氣置換,藉此,成為防止通過其內部的X線衰減的構造。Next, a more detailed structure of the X-ray measuring apparatus of the first embodiment will be described using the attached FIG. In the sample 5, the X-rays were irradiated by the X-ray generator 1 and the X-ray optical element 2. At this time, the X-ray generated by the X-ray generating device 1 is focused on a small irradiation area by passing through the X-ray optical element 2 as described above. Further, the inside of the X-ray optical element 2 is evacuated or evacuated by helium gas, thereby preventing the X-rays passing through the inside from being attenuated.

另一方面,由被照射X線的試樣(基板)5上的微小部位51所放出的螢光X線32,由X線檢測器3所捕獲,藉由檢測器控制部31,被變換為X線光子數對螢光X線能量之柱狀圖而被送至資料處理裝置7。藉此,以光學顯微鏡4所捕捉到的試樣5,藉由根據試樣相對位置移動機構6之移動,而使在X線發生裝置1發生的X線移動至藉由X線光學元件2而被聚焦/照射的位置,使此時發生的螢光X線藉由X線檢測器3來捕獲,於資料處理裝置7,進行捕獲的螢光X線的光子能量分布(光譜)的解析,從而進行被照射X線的部位的元素分析。又,此時,如果使試樣的微小部位51起至X線檢測器3為止的距離成為在5mm以下,則即使由試樣的微小部位51發生而能量為1.0keV的特性X線,也可以抑制其在空氣中的衰減,而可以將此檢測出。On the other hand, the fluorescent X-rays 32 emitted from the minute portion 51 on the sample (substrate) 5 irradiated with the X-rays are captured by the X-ray detector 3, and are converted into the detector control unit 31. The X-ray photon number is sent to the data processing device 7 in a histogram of the fluorescent X-ray energy. Thereby, the X-ray generated by the X-ray generating device 1 is moved to the X-ray optical element 2 by the movement of the sample relative position moving mechanism 6 by the sample 5 captured by the optical microscope 4. The focused/illuminated position causes the fluorescent X-rays generated at this time to be captured by the X-ray detector 3, and the data processing device 7 analyzes the photon energy distribution (spectrum) of the captured fluorescent X-rays, thereby Elemental analysis of the portion where the X-ray is irradiated is performed. In addition, when the distance from the minute portion 51 of the sample to the X-ray detector 3 is 5 mm or less, the characteristic X-ray having an energy of 1.0 keV generated by the minute portion 51 of the sample can be used. This can be detected by suppressing its attenuation in the air.

特別是,在本實施例,作為X線發生裝置1的X線靶材,使用鉬(Mo)的場合,在施加電壓50kV,電流0.5mA的動作條件下,300Mcps之X線被照射於試樣5的微小部位51。此時,以原子序42的鉬(Mo)起至原子序47之銀(Ag)為止的金屬為X線靶材的話,於照射的X線之中,會混入Lα之特性X線。又,此Lα之特性X線,在MoLα,X線能量為2.29keV,在AgLα,X線能量為2.98keV,亦即,接近於鋁金屬(Al)的螢光X線激發能量之1.56keV附近,可以由鋁金屬(Al)以很高的效率放出AlKα之螢光X線。另一方面,MoKα及AgKα之特性X線,對過渡金屬之激發是有效的,與一般使用的金屬元素之Al同樣,對於Cr、Fe、Co、Ni、Cu等過渡金屬的微小部螢光X線分析是有效的,可以進行高感度的計測。In particular, in the present embodiment, when molybdenum (Mo) is used as the X-ray target of the X-ray generator 1, the X-ray of 300 Mcps is irradiated to the sample under an operating condition of a voltage of 50 kV and a current of 0.5 mA. The tiny part 51 of 5. At this time, when the metal from the molybdenum (Mo) of the atomic order 42 to the silver (Ag) of the atomic order 47 is an X-ray target, the characteristic X-ray of Lα is mixed into the X-rays to be irradiated. Further, the characteristic X line of Lα is 2.29 keV in MoLα, and the X-ray energy is 2.98 keV in AgLα, that is, near 1.56 keV of the fluorescent X-ray excitation energy of aluminum metal (Al). The fluorescent X-ray of AlKα can be released by aluminum metal (Al) with high efficiency. On the other hand, the characteristic X-rays of MoKα and AgKα are effective for the excitation of the transition metal, and similar to the Al of the metal element generally used, the minute portion of the transition metal of Cr, Fe, Co, Ni, Cu, etc. Line analysis is effective and can be used for high sensitivity measurements.

其次,於附圖3,顯示於本發明之X線計測裝置供進行X線計測之用的座標測定之流程。Next, Fig. 3 shows a flow of coordinate measurement for performing X-ray measurement in the X-ray measuring apparatus of the present invention.

由圖可知,開始XRF(螢光X線)測定位置檢測時,首先把測定位置之編號(m)設定為m=0(步驟S31),接著,使其值m僅增加1(m=m+1)(步驟S32)。接著,進行座標移動直到測定位置之編號(m)的座標(例如,(mx,my))(步驟S33),接著進行Z位置的調整(步驟S34)。首先,進行光學測定(步驟S35),判定有無微粒子的存在(步驟S36)。其結果,在判定為有微粒子的存在的場合(圖之「Yes」),記錄其座標(步驟S37),其後,藉由前述之m之值,判定所有的測定是否結束(步驟S38)。另一方面,在判定沒有微粒子存在的場合(圖之「No」),立刻移至前述步驟S37。As can be seen from the figure, when the XRF (fluorescence X-ray) measurement position detection is started, the number (m) of the measurement position is first set to m = 0 (step S31), and then the value m is increased by only 1 (m = m + 1) (step S32). Next, the coordinate is moved until the coordinate of the number (m) of the position (for example, (mx, my)) is measured (step S33), and then the Z position is adjusted (step S34). First, optical measurement is performed (step S35), and it is determined whether or not there is the presence of fine particles (step S36). As a result, when it is determined that the presence of fine particles ("Yes" in the figure), the coordinates are recorded (step S37), and thereafter, it is determined whether or not all the measurements are completed by the value of m described above (step S38). On the other hand, when it is determined that no fine particles are present ("No" in the figure), the process proceeds immediately to the above-described step S37.

接著,前述步驟S37之判定結果,為測定尚未結束(圖之「No」)的場合,處理,會再度回到前述步驟S32,另一方面,在判定所有的測定都結束(圖之「Yes」)的場合,將微粒子存在的座標,配置於記錄的座標的前頭(步驟S39),進而作為M0=m+1(步驟S40),結束處理。Next, if the result of the determination in the above step S37 is that the measurement has not been completed ("No" in the figure), the process returns to the above-described step S32, and it is determined that all the measurements are completed ("Yes" in the figure). In the case of the coordinates, the coordinates of the microparticles are placed in front of the recorded coordinates (step S39), and further, M0 = m+1 (step S40), and the processing is terminated.

又,前述之流程,係顯示供決定進行螢光X線測定的位置的座標之用的,使用可見光來進行之一例。又,為了要決定座標,除了前述的可見光以外,例如也可以使用紅外線或紫外線的方式。又,以可見光決定X線計測座標之後可以立刻進行X線計測。Further, the above-described flow is for displaying a coordinate for determining the position at which the X-ray measurement is performed, and is performed using visible light. Further, in order to determine the coordinates, in addition to the visible light described above, for example, infrared rays or ultraviolet rays may be used. Further, X-ray measurement can be performed immediately after the X-ray measurement coordinates are determined by visible light.

進而,於附圖之圖4~圖6,顯示使用前述圖1及圖2所示的構成之X線計測裝置來測定的螢光X線的光子能量分布之一例。又,此測定例的場合,在X線發生裝置發生的X線的光子能量為5.4keV。Further, an example of the photon energy distribution of the fluorescent X-rays measured by the X-ray measuring device having the configuration shown in Figs. 1 and 2 is shown in Figs. 4 to 6 of the drawings. Moreover, in the case of this measurement example, the photon energy of the X-ray generated by the X-ray generator was 5.4 keV.

圖4係顯示試樣所含的元素的特性X線之能量,及藉由一定時間的測定而檢測出的光子之計測資料,藉由此圖4之資料,可以測定在計測區域所含的元素的種類與數量。接著,在本發明之計測裝置,特別試藉由把大氣中的X線路徑設定為5mm以下,可以抑制在大氣中的螢光X線的衰減,結果,如圖4所示,也可以檢測出鈉(Na)。又,鈣(Ca)或鋇(Ba)之螢光X線,在大氣中幾乎不會衰減,所以可在高感度下進行測定。Fig. 4 is a view showing the energy of the characteristic X-ray of the element contained in the sample, and the measurement data of the photon detected by the measurement for a certain period of time. From the data of Fig. 4, the element contained in the measurement area can be measured. The type and quantity. In the measurement device of the present invention, it is possible to suppress the attenuation of the fluorescent X-rays in the atmosphere by setting the X-ray path in the atmosphere to 5 mm or less. As a result, as shown in FIG. Sodium (Na). Further, since the fluorescent X-ray of calcium (Ca) or barium (Ba) hardly attenuates in the atmosphere, it can be measured under high sensitivity.

其次,使用圖5與圖6,說明於基板包含著與試樣微粒子相同的原子種的場合之檢測方法。Next, a detection method in the case where the substrate contains the same atomic species as the sample microparticles will be described with reference to FIGS. 5 and 6.

於大多數領域作為基板使用的材料,有玻璃。在相關的玻璃,作為一般使用的,有氧化鋁矽酸鹽,其組成為鹼金屬/鹼土類金屬,及氧化鋁/氧化矽之混合物。此處使用的玻璃基板之螢光X線光譜之例顯示於圖5。A material used as a substrate in most fields is glass. In the related glass, as a general use, there is an alumina silicate having a composition of an alkali metal/alkaline earth metal and a mixture of alumina/yttria. An example of the fluorescent X-ray spectrum of the glass substrate used herein is shown in FIG.

於此圖5所示之光譜,被測量到鋁(Al)、矽(Si)、磷(P)、少量的硫(S)、氯(Cl),進而還有大氣中的氬氣(Ar)。此外,由此測定結果,作為玻璃中所含有的元素,檢測出Al與Si。又,P、S、Cl係藉由玻璃表面的處理而附著之物所被測量到的。The spectrum shown in Figure 5 is measured for aluminum (Al), cerium (Si), phosphorus (P), a small amount of sulfur (S), chlorine (Cl), and further argon (Ar) in the atmosphere. . Further, from the measurement results, Al and Si were detected as elements contained in the glass. Further, P, S, and Cl were measured by adhering to the surface of the glass.

此處,在前述之玻璃基板的表面上分散Al金屬粉,藉由移動基板位置,而將該Al金屬粉導入前述X線照射區域內,使螢光X線以與前述相同的條件來測定,藉此所得到的結果顯示於圖6。Here, the Al metal powder is dispersed on the surface of the glass substrate, and the Al metal powder is introduced into the X-ray irradiation region by moving the substrate position, and the fluorescent X-ray is measured under the same conditions as described above. The results obtained thereby are shown in Fig. 6.

在此,取這些被測定的光譜之差的話,得到於附圖之圖7中標示著「差分光譜」之差分光譜。又,在此例,出現的峰,係由Al的微小金屬粉所造成的峰,亦即,可以檢測出微小異物。又,根據此方法,藉由本實施例之裝置測定的結果,可以檢測出1ng程度的Al微小金屬粉。Here, when the difference between the measured spectra is taken, a difference spectrum indicating "differential spectrum" is shown in FIG. 7 of the drawing. Further, in this case, the peak appearing is a peak caused by the fine metal powder of Al, that is, a minute foreign matter can be detected. Further, according to this method, the Al minute metal powder of about 1 ng can be detected by the measurement of the apparatus of the present embodiment.

此處,針對在本發明使用的微小金屬粉的檢測,說明其確定性(確實性)。X線的檢測,係藉由檢測器,藉由計測入射至該檢測器的X線的光子而進行的,其數目(N)的測量精度,作為計測統計誤差(1σ),係以N的平方根來表示。此外,在X線的計測,必然會觀測到由檢測器自身,或者是由電子電路所產生的背景雜訊。接著,來自微小異物的螢光X線的計測強度,係以包含金屬微粒子的計測值(N1),與不含該金屬微粒子的計測值(N0)之差(N1-N0)來表示,分別的計測值,包含√N1、√N0之計測統計誤差(1σ)。亦即,為了判斷來自微小金屬粒子的螢光X線強度係以nσ的水準來測定的,而使用以下之式(1)。Here, the certainty (confirmability) of the detection of the minute metal powder used in the present invention will be described. The detection of the X-ray is performed by measuring the photon of the X-ray incident on the detector by the detector, and the measurement accuracy of the number (N) is taken as the measurement statistical error (1σ), which is the square root of N. To represent. In addition, in the X-ray measurement, background noise generated by the detector itself or by the electronic circuit is inevitably observed. Next, the measurement intensity of the fluorescent X-rays from the minute foreign matter is represented by a difference (N1 - N0) between the measured value (N1) including the metal fine particles and the measured value (N0) not including the metal fine particles, respectively. The measured value includes the measured statistical error (1σ) of √N1 and √N0. That is, in order to judge that the intensity of the fluorescent X-rays from the fine metal particles is measured at the level of nσ, the following formula (1) is used.

n=(N1-N0)/(√N1+√N0)‧‧‧(1)n=(N1-N0)/(√N1+√N0)‧‧‧(1)

在n=1,常態分佈函數有68%的機率可以判定「有微小金屬異物」,其機率在n=2的場合成為95%,進而在n=3的場合成為99.7%。作為一例,在N1與N0分別為1000與900的場合,n=1.6,接著,N1與N0分別為500與400的場合,成為n=2.4,即使來自微小金屬粒子的計測強度(N1-N0)為相同,也因為後者的背景螢光X線雜訊強度很低,所以成為確實性很高的檢測。此外,計測強度(N1-N0)係來自微小金屬粒子的螢光X線強度,為大致比例於金屬粒子重量之值。At n=1, the normal distribution function has a probability of 68% to determine "the presence of minute metal foreign matter", and the probability is 95% in the case of n=2, and 99.7% in the case of n=3. As an example, when N1 and N0 are 1000 and 900, respectively, n=1.6, and when N1 and N0 are 500 and 400, respectively, n=2.4, even if the measurement intensity (N1-N0) from the minute metal particles is obtained. The same, and because the background fluorescence of the latter is very low, it becomes a highly reliable test. Further, the measured intensity (N1-N0) is the intensity of the fluorescent X-ray derived from the fine metal particles, and is a value roughly proportional to the weight of the metal particles.

此處,檢測出複數種過度金屬粒子的場合,藉由進行以下的處理,可謀求資料精度的提高。又,作為常用的過渡金屬元素,可以舉出原子序24之鉻(Cr)~原子序29之銅(Cu),但對於各元素被激發的2種螢光X線之中,被稱為Kβ之高能量側的X線,與原子序大1號之被稱為Kα的低能量側的光譜重疊。其模樣顯示於附圖8。亦即,被檢測出各元素的螢光X線的場合,因為Kα以外必定有Kβ存在,而在測量到的光譜資料上進行處理。同樣的,對於進而原子序更大的元素,則作為有複數之Lα與Lβ者來進行處理。藉此,可以謀求計測資料的精度提高。Here, when a plurality of types of excessive metal particles are detected, the following processing can be performed to improve the data accuracy. Further, examples of the commonly used transition metal element include chromium (Cr) to atomic order 29 (Cu) of atomic order 24, but among the two types of fluorescent X-rays excited by each element, it is called Kβ. The X-ray on the high energy side overlaps with the spectrum on the low energy side of the atomic order No. 1 called Kα. Its appearance is shown in Figure 8. That is, in the case where the fluorescent X-ray of each element is detected, Kβ is necessarily present in addition to Kα, and processing is performed on the measured spectral data. Similarly, for elements having a larger atomic order, they are treated as a complex number of Lα and Lβ. Thereby, the accuracy of the measurement data can be improved.

其次,說明使用複數點之資料,來抑制基板所含有的元素的影響之方法。此處使用的螢光X線檢測器,使用所謂的能量分散型(ED)檢測器,對於多通道分析器之光譜,係以數位的方式被蓄積於資料處理裝置7的記憶體。亦即,此處所述之演算,係以非常高的速度來執行的。Next, a method of suppressing the influence of the elements contained in the substrate using the data of the complex point will be described. The fluorescent X-ray detector used herein uses a so-called energy dispersive type (ED) detector, and the spectrum of the multichannel analyzer is digitally accumulated in the memory of the data processing device 7. That is, the calculations described here are performed at a very high speed.

於基板上有複數點之計測資料的場合,不一定對各測定點都進行沒有金屬微粒子之計測,可以推定來自基板的螢光X線光譜。基板的種類係屬已知。例如,在玻璃的場合,其組成為鹼金屬(Na、K等)、鹼土類金屬(Ca、Ba等)與鋁(Al)及矽(Si)與氧(O)。亦即,在進行微粒子的螢光X線測定時,微粒子不是這些元素而是過渡金屬(例如Cr、Fe、Co、Ni、Cu等)的場合,構成微粒子的元素以外,都可以判定是來自源於基板的元素的螢光X線。亦即,包含微粒子的測定之中,檢測出原本基板不含有的元素的場合,基板所包含的元素的螢光X線光譜,可以判斷是來自基板者。When there is a plurality of measurement data on the substrate, it is not always necessary to measure the metal microparticles for each measurement point, and the fluorescence X-ray spectrum from the substrate can be estimated. The type of substrate is known. For example, in the case of glass, the composition is an alkali metal (Na, K, etc.), an alkaline earth metal (Ca, Ba, etc.), and aluminum (Al), bismuth (Si), and oxygen (O). In other words, in the case of performing fluorescence X-ray measurement of fine particles, when the fine particles are not transitional metals (for example, Cr, Fe, Co, Ni, Cu, etc.), the elements constituting the fine particles can be judged to be from the source. Fluorescent X-rays of the elements of the substrate. In other words, in the measurement including the fine particles, when the element which is not contained in the original substrate is detected, the fluorescence X-ray spectrum of the element contained in the substrate can be judged to be from the substrate.

例如,複數之計測金屬微粒子與來自基板的元素為相同的場合,比較複數之光譜,例如比較對應於鋁(Al)的光譜的螢光X線強度,把最小的數值假定為源自基板的螢光X線強度,而藉由前述式(1)來計算n值。同樣地,最大的Al螢光X線的n值,在閾值nt(例如,nt=2.0)以上的場合,把最低的Al螢光X線強度當作為來自基板的螢光X線強度。結果,在所有的計測之n值都在閾值nt以下的場合,把金屬微粒子不存在的場所之螢光X線強度作為來自基板的螢光X線強度。如此進行,藉由求出來自基板的螢光X線強度,總是比較存在金屬微粒子(有)之點,與不存在(無)之點的計測的場合,可以高速地進行計測。又,此時之測定之一例,顯示於附圖9。For example, when the plurality of metal fine particles are the same as the elements from the substrate, the complex spectrum is compared, for example, the intensity of the fluorescent X-ray corresponding to the spectrum of aluminum (Al) is compared, and the smallest value is assumed to be the fluorescent material derived from the substrate. The X-ray intensity is calculated, and the value of n is calculated by the above formula (1). Similarly, when the n value of the largest Al fluorescent X-ray is equal to or greater than the threshold nt (for example, nt=2.0), the lowest Al-fluorescence X-ray intensity is taken as the fluorescence X-ray intensity from the substrate. As a result, when all of the measured n values are equal to or less than the threshold nt, the intensity of the fluorescent X-ray in the place where the metal fine particles do not exist is taken as the intensity of the fluorescent X-ray from the substrate. In this way, by determining the intensity of the fluorescent X-ray from the substrate, it is always possible to compare the point where the metal fine particles are present, and the measurement of the point where there is no (none), and the measurement can be performed at a high speed. Moreover, an example of the measurement at this time is shown in FIG.

如此圖9之流程所示,開始微小部XRF(螢光X線)計測時,首先,把測定位置的編號(m)設定為m=0(步驟S91),接著,使該值m僅增加1(m=m+1)(步驟S92)。其次,直到測定位置的編號(m)的座標(例如,(mx,my))為止進行座標移動(步驟S93),接著,進行Z位置的調整(步驟S94)。其後,進行XRF(螢光X線)計測(步驟S95),藉由其結果所得到的資料,找出m資料的最小值(步驟S96)。其後,使k=0、M1=m(步驟S97),其次,使k逐次增加1(k=k+1)(步驟S98),同時算出全測定n值(步驟S99),製作圖之左側所示之表。其後,確認所有的資料處理之結束(步驟S100、S101),其後,結束處理。As shown in the flow of FIG. 9 , when the micro-section XRF (fluorescence X-ray) measurement is started, first, the number (m) of the measurement position is set to m=0 (step S91), and then the value m is incremented by only one. (m=m+1) (step S92). Next, the coordinate movement is performed until the coordinate of the number (m) of the measurement position (for example, (mx, my)) (step S93), and then the Z position is adjusted (step S94). Thereafter, XRF (fluorescence X-ray) measurement is performed (step S95), and the minimum value of the m data is found by the data obtained as a result (step S96). Thereafter, k=0 and M1=m are made (step S97), and then k is sequentially incremented by 1 (k=k+1) (step S98), and the total measured n value is calculated (step S99), and the left side of the map is created. The table shown. Thereafter, it is confirmed that all the data processing is completed (steps S100 and S101), and thereafter, the processing is ended.

[實施例2][Embodiment 2]

於附圖之圖10~圖13,顯示本發明的實施例2之微小部X線計測裝置,此處,於以下,以與前述之實施例1的微小部X線計測裝置之差異點為主進行說明。亦即,在此實施例2之微小部X線計測裝置,與前述實施例1之微小部X線計測裝置不同,其係使光學顯微鏡的光軸,與被照射於試樣的X線的光學軸一致。根據採用相關的構成,可以使在前述之實施例1的個別的單元進行一體化。10 to 13 show a micro-part X-ray measuring device according to a second embodiment of the present invention. Here, the difference between the micro-X-ray measuring device of the first embodiment described above is mainly Be explained. That is, the micro X-ray measuring device of the second embodiment differs from the micro X-ray measuring device of the first embodiment in that the optical axis of the optical microscope and the X-ray of the sample are irradiated. The axes are consistent. According to the configuration, the individual units of the first embodiment described above can be integrated.

亦即,圖10係顯示成為實施例2的微小部X線計測裝置的正面圖,圖11為其側面圖。此外,圖12及圖13分別為顯示其內部構成之用的縱方向及橫方向之剖面圖。That is, Fig. 10 is a front view showing the micro-part X-ray measuring device of the second embodiment, and Fig. 11 is a side view thereof. 12 and 13 are cross-sectional views in the longitudinal direction and the lateral direction for showing the internal configuration thereof.

由這些圖亦可知,在實施例2之微小部X線計測裝置,作為光學顯微鏡使用卡塞格倫(Cassegrain)反射鏡。於此卡塞格倫(Cassegrain)型光學顯微鏡8的鏡筒44,被安裝著供觀察試樣或試樣基板的光學影像之用的CCD單元42、顯微鏡光源43,及X線發生裝置1。As can be seen from these figures, in the micro-section X-ray measuring apparatus of the second embodiment, a Cassegrain mirror is used as an optical microscope. The lens barrel 44 of the Cassegrain-type optical microscope 8 is attached with a CCD unit 42, an optical source 43, and an X-ray generator 1 for observing an optical image of a sample or a sample substrate.

在相關的構成之微小部X線計測裝置,以X線管13產生的X線,由X線焦點16放出,通過被設置於X線快門室15內部的X線快門14,接著,通過聚合毛細管X線光學元件21而照射於X線計測點24。此時,通過聚合毛細管X線光學元件21的X線,藉由光學元件的作用,聚焦於X線計測點24。此外,佔有X線所通過的路徑的大部分之X線快門室15、被設置於X線光學元件保持內筒22的內部的聚合毛細管X線光學元件21,及X線檢測器真空室35,係藉由從真空排氣管25排氣而被保持於真空。藉此,抑制空氣所造成的X線之吸收。In the micro-section measuring device of the related configuration, the X-ray generated by the X-ray tube 13 is discharged from the X-ray focal point 16 through the X-ray shutter 14 provided inside the X-ray shutter chamber 15, and then through the polymerization capillary. The X-ray optical element 21 is irradiated to the X-ray measurement point 24. At this time, by X-rays of the capillary X-ray optical element 21, the X-ray measurement point 24 is focused by the action of the optical element. Further, the X-ray shutter room 15 occupies most of the path through which the X-ray passes, the polymeric capillary X-ray optical element 21 provided inside the X-ray optical element holding inner tube 22, and the X-ray detector vacuum chamber 35, It is held in a vacuum by exhausting from the vacuum exhaust pipe 25. Thereby, the absorption of the X-ray caused by the air is suppressed.

在X線計測點產生的螢光X線,通過X線透過窗23,入射至被設置於X線檢測器真空室35的內部的X線檢測元件33,被變換為電氣訊號,透過圖12所未圖示的訊號線輸入至檢測器控制部31,接著,於資料處理裝置7獲得螢光X線光譜。The X-rays generated at the X-ray measurement points are incident on the X-ray detecting elements 33 provided inside the X-ray detector vacuum chamber 35 through the X-ray transmission window 23, and are converted into electric signals, which are transmitted through FIG. A signal line (not shown) is input to the detector control unit 31, and then a fluorescence X-ray spectrum is obtained in the data processing device 7.

另一方面,由顯微鏡光源43發出的可見光,藉由稜鏡45反射,同時藉由卡塞格倫(Cassegrain)型光學顯微鏡8,藉由被設置在副鏡保持桿83的卡塞格倫副鏡82及卡塞格倫主鏡81來反射聚焦,與X線同樣,被聚焦/照射於X線計測點24。計測點24的光學影像,通過卡塞格倫副鏡82、卡塞格倫主鏡81及稜鏡47,於CCD單元42上投射試樣影像。On the other hand, the visible light emitted by the microscope light source 43 is reflected by the crucible 45 while being passed by the Cassegrain type optical microscope 8, by the Cassegrain pair disposed on the sub mirror holding rod 83. The mirror 82 and the Cassegrain main mirror 81 reflect the focus, and are focused/illuminated to the X-ray measuring point 24 like the X-ray. The optical image of the measurement point 24 is projected onto the CCD unit 42 by the Cassegrain sub-mirror 82, the Cassegrain main mirror 81, and the crucible 47.

以下,參照圖13同時詳細說明X線檢測器真空室35的內部之X線檢測元件34之配置。Hereinafter, the arrangement of the X-ray detecting elements 34 inside the X-ray detector vacuum chamber 35 will be described in detail with reference to FIG.

於X線檢測器真空室35的中央部,被配置聚合毛細管X線光學元件21,於其周圍,被安裝著X線檢測元件34。在本實施例,顯示被安裝著4個X線檢測元件之例。此X線檢測元件之數目,係以預先設想的螢光X線強度來決定的,接著,使用鈹(Be,beryllium)箔之X線透過窗23與X線檢測器真空室35,例如係藉由熔接或黏接而密封,聚合毛細管X線光學元件21及X線檢測器真空室35被真空排氣,而保持於真空。藉此,抑制了由試樣所發生的螢光X線的路徑之中,在X線透過窗23與X線檢測元件34的部分之空氣所導致的X線的吸收。In the central portion of the X-ray detector vacuum chamber 35, a capillary X-ray optical element 21 is disposed, and an X-ray detecting element 34 is mounted around the capillary X-ray optical element 21. In the present embodiment, an example in which four X-ray detecting elements are mounted is shown. The number of the X-ray detecting elements is determined by the intensity of the fluorescent X-rays assumed in advance, and then the X-ray transmitting window 23 of the beryllium (Be, beryllium) foil and the X-ray detector vacuum chamber 35 are used, for example, Sealed by welding or bonding, the polymeric capillary X-ray optical element 21 and the X-ray detector vacuum chamber 35 are evacuated by vacuum and held in a vacuum. Thereby, the absorption of the X-rays by the air in the portion of the X-ray transmission window 23 and the X-ray detecting element 34 among the paths of the fluorescent X-rays generated by the sample is suppressed.

此外,於X線檢測器真空室35的外周部,設有可見光透過窗26,在構成通往供進行試樣影像的照明及觀察之用的成像光學系統的光徑之該實施例2,特徵為被照射X線之軸與觀察用顯微鏡的光軸一致這一點,據此,可在裝置製造時藉由調整而固定可見光焦點與X線焦點的位置,所以可以得到具有可提供容易安裝或調整的微小部X線計測裝置的優點。Further, in the outer peripheral portion of the X-ray detector vacuum chamber 35, a visible light transmission window 26 is provided, and the optical path of the imaging optical system for illumination and observation of the sample image is formed. Since the axis of the X-ray to be irradiated coincides with the optical axis of the observation microscope, the position of the visible light focus and the X-ray focus can be fixed by adjustment during the manufacture of the device, so that it can be easily provided or adjusted. The advantages of the tiny part X-ray measuring device.

[實施例3][Example 3]

於附圖之圖14,顯示本發明的實施例3之微小部X線計測裝置,此處,也於以下,以與前述之實施例2的微小部X線計測裝置之差異點為主來進行說明。亦即,在此圖14所示之微小部X線計測裝置,與前述實施例2之微小部X線計測裝置所採用的卡塞格倫型光學顯微鏡不同,藉由在折射透鏡的中央光軸部分開設孔,於該處安裝聚合毛細管X線光學元件21,而使試樣觀察用光學系統與試樣照射X線光學系統之軸成為一致。進而,藉由前述之構成,螢光X線的檢測,與前述實施例2不同,係作為另外的單元而被配置於物鏡48的周圍。亦即,在此實施例3,藉由在螢光X線檢測器36的螢光X線入射側,安裝聚合毛細管螢光X線光學元件37,而使入射至檢測器的X線的取入立體角增加,因而,實現可以進行高感度的計測的裝置。Fig. 14 shows a micro-part X-ray measuring device according to a third embodiment of the present invention. Here, the difference from the micro-part X-ray measuring device of the second embodiment described above is mainly performed. Description. That is, the micro-X-ray measuring device shown in FIG. 14 is different from the Cassegrain-type optical microscope used in the micro-X-ray measuring device of the second embodiment, by the central optical axis of the refractive lens. A hole is partially opened, and the polymeric capillary X-ray optical element 21 is mounted there, and the optical system for sample observation is aligned with the axis of the sample irradiated to the X-ray optical system. Further, according to the configuration described above, the detection of the fluorescent X-rays is different from the above-described second embodiment, and is disposed as a separate unit around the objective lens 48. That is, in the third embodiment, the X-rays incident on the detector are taken in by the polymerization capillary X-ray optical element 37 on the incident side of the X-ray detector of the fluorescent X-ray detector 36. The solid angle is increased, and thus, a device capable of performing high-sensitivity measurement is realized.

即使在本實施例,X線光學元件保持內筒22及螢光X線光學元件保持內筒38的內部,被真空排氣或被氦氣置換,藉此,防止通過被設置於這些的內部之聚合毛細管X線光學元件21及聚合毛細管螢光X線光學元件37內部的X線的衰減。Even in the present embodiment, the X-ray optical element holds the inner tube 22 and the fluorescent X-ray optical element in the inside of the inner tube 38, and is evacuated or replaced by helium gas, thereby preventing passage through the inside of these. The X-ray attenuation inside the polymeric capillary X-ray optical element 21 and the polymeric capillary fluorescent X-ray optical element 37.

1...X線發生裝置1. . . X-ray generating device

2...X線光學元件2. . . X-ray optics

3...X線檢測器3. . . X-ray detector

4...光學顯微鏡4. . . Optical microscope

5...試樣,試樣機板5. . . Sample, sample plate

6...試樣相對移動機構6. . . Specimen relative moving mechanism

7...資料處理裝置7. . . Data processing device

8...卡塞格倫(Cassegrain)型光學顯微鏡8. . . Cassegrain optical microscope

11...X線發生控制部11. . . X-ray generation control unit

12...X線管遮蔽物12. . . X-ray tube shelter

13...X線管13. . . X-ray tube

14...X線快門14. . . X-ray shutter

15...X線快門室15. . . X-ray shutter room

16...X線焦點16. . . X-ray focus

17...試樣照射X線17. . . Sample irradiation X-ray

21...聚合毛細管(Polycapillary)X線光學元件twenty one. . . Polycapillary X-ray optics

22...X線光學元件保持鏡筒twenty two. . . X-ray optical component holding lens barrel

23...X線透過窗twenty three. . . X-ray transmission window

31...檢測器控制部31. . . Detector control unit

32...螢光X線32. . . Fluorescent X-ray

34...X線檢測元件34. . . X-ray detecting element

35...X線檢測真空室35. . . X-ray detection vacuum chamber

36...螢光X線檢測器36. . . Fluorescent X-ray detector

37...聚合毛細管(Polycapillary)螢光X線光學元件37. . . Polycapillary fluorescent X-ray optics

38...螢光X線光學元件保持鏡筒38. . . Fluorescent X-ray optics keep the lens barrel

41...顯微鏡控制部41. . . Microscope control department

42...CCD單元42. . . CCD unit

43...顯微鏡光源43. . . Microscope light source

44...鏡筒44. . . Lens barrel

45...稜鏡45. . .稜鏡

48...物鏡48. . . Objective lens

51...試樣51. . . Sample

61...試樣移動控制部61. . . Sample movement control unit

81...卡塞格倫(Cassegrain)主鏡81. . . Cassegrain main mirror

82...卡塞格倫(Cassegrain)副鏡82. . . Cassegrain sub mirror

83...副鏡保持桿83. . . Secondary mirror retaining rod

圖1係顯示相關於本發明之實施例1的微小部X線計測裝置的概略構成之全體立體圖。Fig. 1 is a perspective view showing a schematic configuration of a micro-section X-ray measuring apparatus according to a first embodiment of the present invention.

圖2係說明前述實施例1之微小部X線計測裝置之來自試樣的螢光X線的計測之圖。Fig. 2 is a view for explaining measurement of fluorescent X-rays from a sample of the micro-part X-ray measuring device of the first embodiment.

圖3係於前述實施例1之微小部X線計測裝置,顯示決定進行螢光X線計測的試樣位置的座標之流程之圖。Fig. 3 is a view showing a flow of coordinates of a sample position for determining the X-ray measurement by the micro-section X-ray measuring device of the first embodiment.

圖4係於前述實施例1之微小部X線計測裝置,使用鉻(Cr)靶之X線產生裝置(X線管)來計測的玻璃基板上試樣之測定例(測定例1)之包含X線頻譜之圖。4 is a measurement example of the measurement example (measurement example 1) of the sample on the glass substrate measured by the X-ray generation device (X-ray tube) of the chromium (Cr) target, which is the micro-section X-ray measuring device of the first embodiment. A diagram of the X-ray spectrum.

圖5係於前述實施例1之微小部X線計測裝置,使用鉻(Cr)靶之X線產生裝置(X線管)來計測的玻璃基板上試樣之其他測定例(測定例3)之包含X線頻譜之圖。Fig. 5 is a view showing another measurement example (measure example 3) of the sample on the glass substrate measured by the X-ray generating device (X-ray tube) of the chromium (Cr) target using the micro-section X-ray measuring device of the first embodiment; Contains a map of the X-ray spectrum.

圖6係於前述實施例1之微小部X線計測裝置,使用鉻(Cr)靶之X線產生裝置(X線管)來計測之於表面存在鋁質微小金屬粉的玻璃基板上試樣之測定例(測定例3)之包含X線頻譜之圖。6 is a micro-section X-ray measuring apparatus according to the first embodiment, which measures a sample on a glass substrate having aluminum micro-metal powder on the surface thereof using an X-ray generating device (X-ray tube) of a chromium (Cr) target. The measurement example (measurement example 3) contains the X-ray spectrum.

圖7係於前述實施例1之微小部X線計測裝置,使用鉻(Cr)靶之X線產生裝置(X線管)來計測的前述測定例2與測定例3,以及顯示其差分的包含X線頻譜之圖。Fig. 7 is a view showing the measurement example 2 and the measurement example 3 measured by the X-ray generation device (X-ray tube) using a chromium (Cr) target, and the inclusion of the difference therebetween, in the micro-section X-ray measuring device according to the first embodiment. A diagram of the X-ray spectrum.

圖8係由原子序24之鉻(Cr)至原子序29之銅(Cu)為止的過渡金屬元素之Kα及Kβ頻譜之例之圖。Fig. 8 is a view showing an example of Kα and Kβ spectra of transition metal elements from chromium (Cr) of atomic order 24 to copper (Cu) of atomic order 29.

圖9係於前述實施例1之微小部X線計測裝置,顯示測定座標存在複數點的場合之微小部XRF(螢光X線)計測的流程之圖。Fig. 9 is a view showing a flow of micro-section XRF (fluorescence X-ray) measurement in the case where the measurement target has a plurality of points in the micro-section X-ray measuring device according to the first embodiment.

圖10係顯示成為本發明之實施例2的微小部X線計測裝置的正面圖。Fig. 10 is a front elevational view showing a micro-part X-ray measuring apparatus according to a second embodiment of the present invention.

圖11係顯示成為本發明之實施例2的微小部X線計測裝置的側面圖。Fig. 11 is a side view showing a micro-part X-ray measuring apparatus according to a second embodiment of the present invention.

圖12係說明前述實施例2之微小部X線計測裝置之X線及可見光光學系統的構成之縱方向剖面圖。Fig. 12 is a longitudinal cross-sectional view showing the configuration of an X-ray and a visible light optical system of the micro-part X-ray measuring device according to the second embodiment.

圖13係說明前述實施例2之微小部X線計測裝置之X線及可見光光學系統的構成之橫方向剖面圖。Fig. 13 is a transverse cross-sectional view showing the configuration of the X-ray and visible light optical system of the micro-part X-ray measuring device of the second embodiment.

圖14係顯示相關於本發明之實施例3的微小部X線計測裝置的內部構成之縱方向剖面圖。Fig. 14 is a longitudinal cross-sectional view showing the internal structure of a micro-section X-ray measuring apparatus according to a third embodiment of the present invention.

1...X線發生裝置1. . . X-ray generating device

2...X線光學元件2. . . X-ray optics

3...X線檢測器3. . . X-ray detector

4...光學顯微鏡4. . . Optical microscope

5...試樣,試樣機板5. . . Sample, sample plate

7...資料處理裝置7. . . Data processing device

17...試樣照射X線17. . . Sample irradiation X-ray

31...檢測器控制部31. . . Detector control unit

32...螢光X線32. . . Fluorescent X-ray

42...CCD單元42. . . CCD unit

43...顯微鏡光源43. . . Microscope light source

51...試樣51. . . Sample

Claims (3)

一種微小部X線計測裝置,係具備:X線發生裝置、使由該X線發生裝置所放出的X線在測定試樣上聚焦照射於50μm直徑以下的剖面積之X線光學元件、檢測出由前述測定試樣所放出的螢光X線之X線檢測器、可攝影X線照射位置的光學影像的光學顯微鏡、以及二次元地掃描前述測定試樣,可以定位,而且於高度方向上可以調整其位置的試樣相對移動機構;而且可以計測來自被置於基材上的測定試樣的螢光X線之微小部X線計測裝置;其特徵為:前述X線光學元件與前述X線檢測器藉由X線檢測器真空室保持於真空或氦氣(He)中,同時具備使前述氦氣或真空的X線透過之X線透過窗,且,使被聚焦照射於50μm直徑以下的剖面積的X線照射位置可以藉由根據前述光學顯微鏡之影像辨識機能而移動至特定位置,同時可把前述X線透過窗與前述X線的照射位置之間隔設定為5mm以下,進而,具備備有測定包含僅來自前述基材的計測統計誤差之測定資料,同時測定包含來自被置於前述基材上的前述測定試樣的計測統計誤差之測定資料,藉由取此雙方的測定資料的差分,即使被置於前述基材上的前述測定試樣包含與該基材相同的金屬元素,也可以判定出前述測定試樣含 有該相同的金屬元素的資料處理機能之資料處理部;前述X線檢測器以1個或複數個構成,該1個或複數個X線檢測器被收容於個別的真空室,藉由具有1個或複數個X線光子的能量辨別機能的半導體X線檢測元件而構成;前述光學顯微鏡,於該光學顯微鏡之中心軸,具備可插入前述X線光學元件的孔,而且使該光學顯微鏡之光軸與照射X線束的中心軸為同軸,於該光學顯微鏡的中心軸周邊具備前述X線檢測元件;於前述光學顯微鏡使用卡塞格倫(Cassegrain)型之反射光學顯微鏡,於對向於前述測定試樣的副鏡面背面上,具備單數或複數之X線檢測元件。 A micro-section X-ray measuring device includes: an X-ray generating device that detects an X-ray optical element that is focused on a measurement sample by a X-ray emitted by the X-ray generating device and has a cross-sectional area of 50 μm or less in diameter; The X-ray detector of the fluorescent X-ray emitted from the measurement sample, the optical microscope capable of capturing the optical image of the X-ray irradiation position, and the second measurement of the measurement sample can be positioned, and can be positioned in the height direction. a sample relative movement mechanism for adjusting the position thereof; and a micro X-ray measuring device for measuring a fluorescent X-ray from the measurement sample placed on the substrate; wherein the X-ray optical element and the X-ray are The detector is held in a vacuum or helium (He) by the X-ray detector vacuum chamber, and has an X-ray transmission window that transmits the X-ray of the helium or vacuum, and is focused and irradiated to a diameter of 50 μm or less. The X-ray irradiation position of the sectional area can be moved to a specific position by the image recognition function of the optical microscope, and the interval between the X-ray transmission window and the irradiation position of the X-ray can be set to 5 mm or less. Further, the measurement data including the measurement statistical error including only the substrate is measured, and the measurement data including the measurement statistical error from the measurement sample placed on the substrate is measured, and both of them are taken. The difference between the measurement data, even if the measurement sample placed on the substrate includes the same metal element as the substrate, it can be determined that the measurement sample contains a data processing unit having a data processing function of the same metal element; wherein the X-ray detector is composed of one or a plurality of X-ray detectors, and the one or more X-ray detectors are housed in individual vacuum chambers, and have 1 The semiconductor X-ray detecting element of the energy discrimination function of the plurality of X-ray photons; wherein the optical microscope has a hole into which the X-ray optical element can be inserted, and the light of the optical microscope The axis is coaxial with the central axis of the X-ray beam, and the X-ray detecting element is provided around the central axis of the optical microscope; and the Cassegrain-type reflection optical microscope is used in the optical microscope to measure the opposite direction. On the back side of the sub-mirror of the sample, there are singular or plural X-ray detecting elements. 如申請專利範圍第1項之微小部X線計測裝置,其中以具有X線光子之能量辨別機能的1個或複數個半導體X線檢測元件構成,與前述X線光學元件一起在真空排氣或氦氣(He)置換之相同真空室內具備X線檢測器,且由前述X線發生裝置往對向於被設置在前述X線光學元件之前的大氣中的測定試樣的前述真空室之面的全部或者一部分具備透過X線的X線窗。 The micro-section X-ray measuring device according to claim 1, wherein the X-ray optical element has one or a plurality of semiconductor X-ray detecting elements, and is vacuum-exhausted together with the X-ray optical element. An x-ray detector is provided in the same vacuum chamber in which helium (He) is replaced, and the X-ray generator is opposed to the surface of the vacuum chamber of the measurement sample placed in the atmosphere before the X-ray optical element. All or part of it has an X-ray window that passes through the X-ray. 如申請專利範圍第1或2項之微小部X線計測裝置,其中於前述X線發生裝置發生X線的金屬,為原子序24之鉻(Cr)、原子序42之鉬(Mo)至原子序47之銀(Ag)、或者原子序74之鎢(W)至原子序79之金(Au)為止之各元素的單體或者包含複數元素之合金或者層積 膜。 The micro-section X-ray measuring device according to claim 1 or 2, wherein the X-ray metal in the X-ray generating device is a chromium (Cr) of atomic order 24 and a molybdenum (Mo) atom of atomic order 42. Monomer of each element of silver (Ag) of order 47 or tungsten (W) of atomic order 74 to gold (Au) of atomic order 79 or alloy or layer containing plural elements membrane.
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