TWI443857B - Solid state light emitting elements with photonic crystals - Google Patents

Description

Solid state light-emitting element with photonic crystal

The present invention relates to a solid-state light emitting device, and more particularly to a solid-state light emitting device having photonic crystals (PCs).

In the field of solid-state light-emitting elements, light-emitting diodes (LEDs) are gradually replacing the traditional incandescent lamps and fluorescent lamps because of their small size, light weight, and fast reaction speed. ) and other light sources are used as lighting equipment. At present, common applications include large outdoor display billboards, traffic indicator numbers, and LCD backlights.

In order to achieve higher brightness requirements such as automotive lights, projectors, etc., the common improvement methods can be seen by the technique of roughening the light surface, or by forming a decentralized Bragg mirror on the backlight surface. (distribution Bragg reflector; referred to as DBR) or one-dimensional photonic crystal and other technical means to increase the light extraction efficiency of the LED light-emitting surface and enhance its luminous brightness.

Referring to Figure 1, Aurelien David et al., in APPLIED PHYSICS LETTERS 88 , 133514 (2006), Photonic crystal laser lift-off GaN light-emitting diodes, reveals a two-dimensional photonic crystal (2DPCs). ) blue light emitting diode 1 . The manufacturing method of the light-emitting diode 1 is simply described below.

On a epitaxial film 11 formed of a GaN-based sapphire substrate (not shown) and having a positive-negative junction (p-n junction), a plurality of RuO ₂ /Ni/Ag are sequentially formed. a p-electrode 12 configured to be spaced apart from each other, an SiO ₂ layer 13 surrounding the p-electrodes 12, and a gold (Au) layer 14 formed on the SiO ₂ layer 13; subsequently, the gold layer 14 is transferred onto an AlN ceramic substrate 15 and the epitaxial film 11 is removed from the sapphire substrate (not shown) by a laser lift-off (LLO); further, reactive ion etching is utilized. A two-dimensional photonic crystal 16 is formed on the epitaxial film 11 by a reactive ionic etching (RIE). Finally, an n-electrode 17 is formed on the two-dimensional photonic crystal 16 to complete the light-emitting diode 1.

The two-dimensional photonic crystal 16 is a circular groove array arranged in a hexagonal shape, and the light-emitting diode 1 has an emission wavelength of about 430 nm. The two-dimensional photonic crystal 16 has a lattice constant (abbreviated as a) of 215 nm and a filling factor (f) of 0.38 (ie, the groove diameter is 81 nm; the adjacent groove pitch is 134 nm). ).

Although the light-emitting diode 1 can control the variation of the field type and the divergence angle by using the two-dimensional photonic crystal 16, the luminance of the output of the overall light-emitting diode can be improved. However, Aur The two-dimensional photonic crystal 16 disclosed by Lien David et al. can only control the field type and increase the optical output power, but cannot reduce the full width at half maximum of the spectral signal peak of the illuminating light source.

It can be seen from the above description that reducing the half-height value of the illuminating signal peak of the illuminating light source to enhance the illuminating brightness is a subject to be solved by the related fields of the solid-state illuminating element.

<Summary of the Invention>

The invention mainly selects one of a two-dimensional photonic crystal structure and a photonic quasi crystal (PQC) structure to be used together with a one-dimensional photonic crystal (1DPCs) to reduce spectral signals. The full width and width of the peak. The main reason is to use a one-dimensional photonic crystal having a wide angle, a narrow wavelength, and no absorption problem as a mirror, and a two-dimensional photonic crystal and a photonic crystal having a control field type. The assistance of one of them can effectively achieve the purpose of narrowing the half-height of the peak of the illuminating signal.

<Invention purpose>

Accordingly, it is an object of the present invention to provide a solid state light emitting device having a photonic crystal.

Therefore, the solid-state light-emitting element with a photonic crystal of the present invention comprises: a substrate, an optoelectronic semiconductor epitaxial film formed on the substrate and generating a predetermined wavelength band, an electrode unit coupled to the epitaxial film of the optoelectronic semiconductor, and a supply The composite mirror in which the electrode unit is electrically conductive. The optoelectronic semiconductor epitaxial film has a light emitting surface, a backlight surface opposite to the light emitting surface and connected to the substrate, and a positive and negative junction formed between the light emitting surface and the backlight surface. The optoelectronic semiconductor epitaxial film forms a photonic crystal on the light exiting surface. The photonic crystal is one of a two-dimensional photonic crystal and a type of photonic crystal. The electrode unit is configured to combine electrons and holes of the epitaxial film of the optoelectronic semiconductor to form an electron hole pair on the positive and negative junctions. The composite mirror has a one-dimensional photonic crystal sandwiched between the epitaxial film of the optoelectronic semiconductor and the substrate.

The effect of the present invention is to appropriately reduce the luminescence spectrum by integrating one-dimensional photonic crystal with one of two-dimensional photonic crystals and photonic crystals. The half-height value of the signal peak and the brightness of the solid-state light-emitting element.

The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments.

Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals.

<First Preferred Embodiment>

Referring to FIG. 2, a first preferred embodiment of a solid-state light-emitting device with a photonic crystal of the present invention comprises: a substrate 2, an optoelectronic semiconductor epitaxial film 3 formed on the substrate 2 and generating a predetermined wavelength band, and a The electrode unit 5 of the optoelectronic semiconductor epitaxial film 3 and a composite reflector 6 for electrically conducting the electrode unit 5.

In the solid-state light-emitting element with a photonic crystal of the present invention, the first preferred embodiment is a vertical feedthrough formed by a wafer-based lift-off technique and wafer bonding. The light emitting diode; therefore, the substrate 2 is a doped germanium (Si) substrate. The technology related to the substrate separation technology and the wafer bonding technology are not the technical features of the present invention, and will not be further described herein.

The optoelectronic semiconductor epitaxial film 3 has a light emitting surface 31, a backlight surface 32 opposite to the light emitting surface 31 and connected to the substrate 2, and a positive and negative junction 33 formed between the light emitting surface 31 and the backlight surface 32. .

The photo-semiconductor epitaxial film 3 is formed on the light-emitting surface 31 with a photonic crystal 4, which is a two-dimensional photonic crystal (2D PCs) and a photon. One of the crystals (PQC); in the first preferred embodiment of the invention, the photonic crystal 4 is a two-dimensional photonic crystal. The two-dimensional photonic crystal is an array of circular grooves 41 in a hexagonal arrangement or a square arrangement (as shown in Annex 1), or a circular groove array arranged in a honeycomb shape. (As shown in Annex 2); In the first preferred embodiment of the invention, the two-dimensional photonic crystal is an array of circular grooves 41 arranged in a regular hexagon. It is worth mentioning here that when the filling rate is too large, although the field shape of the illuminating source is narrowed, the electrical characteristic effect is poor; conversely, when the filling rate is too small, not only the field type of the illuminating source is widened, And the light characteristics are also poor. Therefore, preferably, the filling rate of the two-dimensional photonic crystal is between 0.10 and 0.90; more preferably, the two-dimensional photonic crystal is an array of circular grooves 41 arranged in a regular hexagon, the two-dimensional The filling rate of the photonic crystal is between 0.40 and 0.70; more preferably, the filling rate of the two-dimensional photonic crystal is between 0.50 and 0.60; the predetermined wavelength band generated by the epitaxial film 3 of the optoelectronic semiconductor is Between 630 nm and 700 nm.

It is worth mentioning that the lattice constant (a) value to be considered when designing a two-dimensional photonic crystal is mainly based on the predetermined wavelength band of the light source; that is, the a value of the two-dimensional photonic crystal must be smaller than λ ₀ /n, and the value of a is the same magnitude as λ ₀ /n, λ ₀ is the predetermined wavelength band, and n is the refractive index of the material of the photonic crystal itself. Therefore, preferably, the lattice constant of the two-dimensional photonic crystal of the first preferred embodiment of the present invention is between 50 nm and 900 nm. In the first preferred embodiment of the present invention, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is 650 nm; the a value of the two-dimensional photonic crystal is 200.0 nm and the filling ratio is 0.52; that is, each circle The diameter of the shaped groove 41 is 104.0 nm, and the spacing between each two adjacent circular grooves 41 is 96.0 nm.

The electrode unit 5 is configured to recombine the electrons and holes of the optoelectronic semiconductor epitaxial film 3 on the positive and negative junctions 33, and has a first electrode 51 formed on the light exit surface 31 and formed. a second electrode 52 on a lower surface of one of the substrates 2.

The composite mirror 6 has a one-dimensional photonic crystal 62 interposed between the optoelectronic semiconductor epitaxial film 3 and the substrate 2, and is sandwiched between the optoelectronic semiconductor epitaxial film 3 and the one-dimensional photonic crystal 62. a current spreading layer 61, a wafer bonding layer 63 interposed between the one-dimensional photonic crystal 62 and the substrate 2, and a plurality of spaced-apart photonic crystals 62 disposed therebetween and interposed therebetween A conductive pillar 64 is interposed between the layer 61 and the wafer bonding layer 63. In the first preferred embodiment of the present invention, the one-dimensional photonic crystal 62 is composed of 14 pairs of TiO ₂ /SiO ₂ dielectric layer pairs, and the thicknesses of TiO ₂ and SiO ₂ are respectively 87 nm and 105 nm. The composite mirror 6 of the present invention mainly uses the current spreading layer 61, the conductive pillars 64 and the one-dimensional photonic crystal 62 to simultaneously provide a vertical injection of current and a reflection of the light source.

<Second preferred embodiment>

Referring to FIG. 2, a second preferred embodiment of the solid state light emitting device with photonic crystal of the present invention is substantially the same as the first preferred embodiment, except that the detail condition of the one-dimensional photonic crystal 62 is And the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is between 480 nm and 550 nm. In the second preferred embodiment of the present invention, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is 530 nm, and the thicknesses of the TiO ₂ and SiO ₂ of the one-dimensional photonic crystal 62 are 67.95 nm and 83.05 nm, respectively. .

<Third preferred embodiment>

Referring to FIG. 2, a third preferred embodiment of the solid state light emitting device with photonic crystal of the present invention is substantially the same as the first preferred embodiment, except that the detail condition of the one-dimensional photonic crystal 62 is a predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3, and a lattice constant of the two-dimensional photonic crystal.

Preferably, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is between 420 nm and 480 nm; and the lattice constant of the two-dimensional photonic crystal is between 50 nm and 900 nm.

In the third preferred embodiment of the present invention, the film structure of the optoelectronic semiconductor epitaxial film 3 is n-GaN/(InGaN/GaN)/p-GaN, wherein n-GaN, InGaN, GaN, and p- The thickness of GaN is 230 nm, 3 nm, 7 nm, and 230 nm, respectively, and the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is 433 nm; the lattice constant of the two-dimensional photonic crystal is 209.1 nm; The electrode 51 is Ti/Al/Ni/Au, the second electrode 52 is Ti/Pt/Au; the current spreading layer 61 is indium tin oxide (ITO) having a thickness of 300 nm; the TiO _{2 of} the one-dimensional photonic crystal 62 is The refractive indices of SiO ₂ at 430 nm are 2.52 and 1.48, respectively, and the thicknesses of TiO ₂ and SiO ₂ are 58.96 nm and 75.04 nm, respectively. The one-dimensional photonic crystal 62 forms a whole in the band of 417 nm to 450 nm. A light source gap is formed by reflecting the light source generated by the third preferred embodiment back to the light exit surface 31; the wafer bonding layer 63 is Au/Ti; each conductive pillar 64 is a diameter of 50 Cr/Au of μm and height of 7 μm.

Referring to Figure 3, the scanning electron microscope of the third preferred embodiment of the present invention The mirror (SEM) image shows that the lattice constant of the two-dimensional photonic crystal is 209.1 nm.

<Fourth preferred embodiment>

Referring to FIG. 2, a fourth preferred embodiment of the solid state light emitting device with photonic crystal of the present invention is substantially the same as the first preferred embodiment, except that the detail condition of the one-dimensional photonic crystal 62 is a predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3, and a range of application of the two-dimensional photonic crystal.

Preferably, the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film 3 of the fourth preferred embodiment of the present invention is between 380 nm and 420 nm; the lattice constant of the two-dimensional photonic crystal is between 50 nm. Between ~900 nm. In the fourth preferred embodiment of the present invention, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is 400 nm, and the thickness of the TiO ₂ and SiO ₂ of the one-dimensional photonic crystal 62 is 46.20 nm and 63.80 nm, respectively. .

The detailed conditions of the photonic crystals (2DPCs) 4 and the one-dimensional photonic crystals (1DPCs) 62 of the first to fourth preferred embodiments of the present invention are simply summarized in the following Table 1.

<Fifth Preferred Embodiment>

Referring to Figures 4 and 5, a fifth preferred embodiment of the solid state light-emitting device of the present invention having a photonic crystal is substantially identical to the second preferred embodiment. The difference is that the photonic crystal 4 is a type of photonic crystal (PQC). The photonic crystal is an array of regular quadrangular grooves 42 which are staggered in a regular quadrilateral and a regular triangular shape, arranged in a pinwheel arrangement (as shown in Annex 3) or in a fibonacci arrangement (as shown in Annex 4); In the fifth preferred embodiment of the present invention, the photonic crystal is an array of regular quadrangular grooves 42 which are staggered in a regular quadrilateral and a regular triangular shape. Preferably, the filling rate of the photonic crystal is between 0.10 and 0.90; the lattice constant of the photonic crystal is between 300 nm and 800 nm.

The array of regular quadrilateral grooves 42 has a plurality of array elements 420; and each of the array cells 420 adjacent to each other is a common three regular quadrangular groove 42 (as shown in FIG. 5). Each array unit 420 has a first array group 421 and a second array group 422 (shown in FIG. 4). Each of the first array groups 421 is formed by six arrays of grooves arranged in a regular triangular shape to form a groove array group arranged in a regular hexagon (FIG. 4 is a square-shaped groove 42 not shown). Each of the second array groups 422 is composed of six arrays of grooves arranged in a regular quadrilateral arrangement and six arrays of grooves arranged in a regular triangular shape (FIG. 4 shows a regular quadrilateral groove 42 not shown). The second array set 422 of each array unit 420 is around its first array set 421.

More preferably, the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film 3 is between 480 nm and 550 nm; the filling rate of the photonic crystal is between 0.40 and 0.70; and more preferably, the class The filling rate of photonic crystals is between Between 0.60 and 0.70. In the fifth preferred embodiment of the present invention, the lattice constant of the photonic crystal, the width of the regular quadrangular groove 42 and the pitch and filling ratio of the regular quadrilateral groove 42 are 350 nm, 220 nm, 130 nm and 0.63, respectively.

<Sixth preferred embodiment>

Referring again to FIG. 5, a sixth preferred embodiment of the solid state light emitting device of the present photonic crystal is substantially identical to the fifth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrilateral groove 42, the pitch and filling ratio of the regular quadrilateral groove 42 are 450 nm, 280 nm, 170 nm and 0.62, respectively.

<Seventh preferred embodiment>

Referring again to Figure 5, a seventh preferred embodiment of a solid state light emitting device having a photonic crystal of the present invention is substantially identical to the fifth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrilateral groove 42, the pitch and filling ratio of the regular quadrilateral groove 42 are 550 nm, 330 nm, 220 nm and 0.60, respectively.

<Eighth preferred embodiment>

Referring again to Figure 5, an eighth preferred embodiment of the solid state light emitting device of the present invention having a photonic crystal is substantially identical to the fifth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrangular groove 42, the pitch and filling ratio of the regular quadrilateral groove 42 are 750 nm, 450 nm, 300 nm and 0.60, respectively.

The detailed conditions of the photonic crystal (PQC) 4 of the fifth to eighth preferred embodiments of the present invention are simply summarized in the following Table 2.

Table 2.

<Ninth preferred embodiment>

Referring again to Figure 5, a ninth preferred embodiment of a solid state light emitting device having a photonic crystal of the present invention is substantially identical to the fifth preferred embodiment. The difference is that the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is between 420 nm and 480 nm; the filling rate of the photonic crystal is between 0.40 and 0.70; and more preferably, the The filling rate of photonic crystals is between 0.50 and 0.60.

In the ninth preferred embodiment of the present invention, the lattice constant of the photonic crystal, the width of the regular quadrangular groove 42 and the pitch and filling ratio of the regular quadrilateral groove 42 are 350 nm, 203 nm, 147 nm and 0.58, respectively.

<Ten preferred embodiment>

Referring again to Figure 5, a tenth preferred embodiment of a solid state light emitting device having a photonic crystal of the present invention is substantially identical to the ninth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrilateral groove 42, the pitch and filling ratio of the regular quadrilateral groove 42 are 450 nm, 264 nm, 186 nm and 0.57, respectively.

<Eleventh Preferred Embodiment>

Referring again to Figure 5, an eleventh preferred embodiment of the solid state light emitting device of the present invention having a photonic crystal is substantially identical to the ninth preferred embodiment. The difference is that the lattice constant of the photonic crystal and the regular quadrangular groove 42 are wide. The pitch and fill ratio of the square and regular quadrilateral grooves 42 are 550 nm, 305 nm, 245 nm, and 0.55, respectively.

<Twelfth preferred embodiment>

Referring again to Figure 5, a twelfth preferred embodiment of a solid state light emitting device having a photonic crystal of the present invention is substantially identical to the ninth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrilateral groove 42, the pitch and filling ratio of the regular quadrilateral groove 42 are 750 nm, 424 nm, 326 nm and 0.57, respectively.

The detailed conditions of the photonic crystal (PQC) 4 of the ninth to twelfth preferred embodiments of the present invention are simply summarized in the following Table 3.

<Analysis data> Referring to FIG. 6, according to the frequency-pair wave vector and the frequency-to-photon state density (DOS) analysis data of the third preferred embodiment of the present invention, the triangle shown in the left figure of FIG. 6 is The circular and square curves represent the three energy level modes of the right image of Figure 6, respectively. From the left diagram of Figure 6, we can see the three energy modes of the frequency between 0.523 a/λ~0.445 a/λ (that is, the wavelength is between 399.81 nm and 469.89 nm). After the right diagram of Figure 6, the three energy modes are in the range of light between 0.49 a / λ ~ 0.47 a / λ (ie, in the 426.73 nm ~ 444.89 nm band) The sub-state density is increased; therefore, the two-dimensional photonic crystal 4 of the third preferred embodiment provides a photonic cavity for the photon in the frequency band of 0.523 a/λ~0.445 a/λ, thereby increasing its light outgoing efficiency.

In addition, referring to FIG. 7, the spectrum of the third preferred embodiment of the present invention shows that the full width at half maximum of the spectral signal peak of the third preferred embodiment is only about 5 nm, and the illuminating without the two-dimensional photonic crystal is not used. The half-height of the spectral signal of the diode (LED) is as high as 30 nm. It is apparent that the third preferred embodiment of the present invention uses the one-dimensional photonic crystal 62 as a mirror with high reflectivity, and the photonic crystal is matched. (ie, two-dimensional photonic crystal) 4 changes the behavior of light propagating within the semiconductor waveguide, forming a light guide similar to the resonant cavity, greatly reducing the full width at half maximum of the spectral signal peak. The solid-state light source provided by the invention has a purer spectral signal peak, and the brightness and yield can be greatly improved by using the fluorescent powder to encapsulate the contribution of the white light source.

Referring to FIG. 8, the optical output power versus injection current graph of the third preferred embodiment of the present invention shows that the third preferred embodiment of the present invention is compared with an LED that does not use a two-dimensional photonic crystal. For example, the optical output power is relatively increased by 10%. It is apparent that the third preferred embodiment of the present invention can simultaneously increase the overall optical output power. Therefore, the brightness of the white light source packaged by the solid-state light-emitting element of the present invention and used in combination with the phosphor powder is further improved.

In summary, the solid-state light-emitting element with photonic crystal of the present invention utilizes a one-dimensional photonic crystal having a wide angle, a narrow wavelength, and no absorption problem as a mirror, and is equipped with a control field type. Assisted by one of two-dimensional photonic crystals and photonic crystals, effectively It is the object of the present invention to achieve the half-height width of the narrowed luminescence signal peak and to increase the luminance of the solid-state light-emitting element.

The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

2‧‧‧Substrate

3‧‧‧Photoelectric semiconductor epitaxial film

31‧‧‧Glossy

32‧‧‧ Backlit surface

33‧‧‧ positive and negative junction

4‧‧‧Photonic crystal

41‧‧‧Circular groove

42‧‧‧French quadrilateral groove

420‧‧‧Array unit

421‧‧‧First array group

422‧‧‧Second array group

5‧‧‧Electrode unit

51‧‧‧First electrode

52‧‧‧second electrode

6‧‧‧Composite mirror

61‧‧‧current distribution layer

62‧‧‧One-dimensional photonic crystal

63‧‧‧ wafer bonding layer

64‧‧‧conductive column

Figure 1 is a front elevational view showing Aur A blue light emitting diode having a two-dimensional photonic crystal disclosed by Lien David et al.; FIG. 2 is a front elevational view showing a first preferred embodiment of a solid state light emitting device having a photonic crystal of the present invention; FIG. 3 is a SEM FIG. 4 is a schematic view showing a photonic crystal of a fifth preferred embodiment of the present invention; FIG. 5 is a schematic view showing the present invention; The positive quadrilateral groove array of the photonic crystal of the fifth preferred embodiment of the invention; FIG. 6 is a frequency versus wave vector and frequency versus photon state density (DOS) analysis data, illustrating the third preferred embodiment of the present invention. For example, the energy level mode of the photon; FIG. 7 is a spectrum diagram illustrating the field shape of the spectrum of the third preferred embodiment of the present invention; and FIG. 8 is a light output power pair of the third preferred embodiment of the present invention. Injection current graph.

Annex 1: Two-dimensional photonic crystals of a circular groove array arranged in a regular quadrilateral.

Annex 2: Two-dimensional photonic crystals in a circular groove array arranged in a honeycomb shape.

Attachment 3: Photonic crystals such as a regular quadrilateral groove array arranged in a string of gears.

Annex 4: Photonic crystals such as a regular quadrilateral groove array arranged in the arrangement of sunflowers.

2‧‧‧Substrate

3‧‧‧Photoelectric semiconductor epitaxial film

31‧‧‧Glossy

32‧‧‧ Backlit surface

33‧‧‧ positive and negative junction

4‧‧‧Photonic crystal

41‧‧‧Circular groove

42‧‧‧French quadrilateral groove

5‧‧‧Electrode unit

51‧‧‧First electrode

52‧‧‧second electrode

6‧‧‧Composite mirror

61‧‧‧current distribution layer

62‧‧‧One-dimensional photonic crystal

63‧‧‧ wafer bonding layer

64‧‧‧conductive column

Claims (11)

A solid-state light-emitting element having a photonic crystal, comprising: a substrate; an optoelectronic semiconductor epitaxial film formed on the substrate and generating a predetermined wavelength band, having a light-emitting surface, a backlight surface opposite to the light-emitting surface, and a formation a positive and negative junction between the light-emitting surface and the backlight surface, the photo-electric semiconductor epitaxial film forming a photonic crystal on the light-emitting surface, the photonic crystal being one of a two-dimensional photonic crystal and one type of photonic crystal; The electron semiconductor epitaxial film and the electrons and holes of the epitaxial film of the optoelectronic semiconductor are combined at the positive and negative junctions to form an electron hole pair, the electrode unit having a first electrode formed on the light emitting surface and one formed on a second electrode on a lower surface of the substrate; and a composite mirror for electrically conducting the electrode unit, having a one-dimensional photonic crystal sandwiched between the epitaxial film of the optoelectronic semiconductor and the substrate, and a sandwich a current spreading layer between the optoelectronic semiconductor epitaxial film and the one-dimensional photonic crystal, a wafer bonding layer sandwiched between the one-dimensional photonic crystal and the substrate, and a plurality of phases Spacer disposed on the one-dimensional photonic crystal and sandwiched between said conductive pillars current spreading layer and the wafer bonding layer. A solid-state light-emitting element having a photonic crystal according to claim 1, wherein the photonic crystal is a two-dimensional photonic crystal, and the two-dimensional photonic crystal is a circular groove arranged in a hexagonal arrangement or a quadrangular arrangement. Array; the filling rate of the two-dimensional photonic crystal is between 0.10 and 0.90. Solid state light emission with photonic crystal according to item 2 of the patent application scope The component, wherein the two-dimensional photonic crystal is a circular groove array arranged in a hexagonal shape, and the filling rate of the two-dimensional photonic crystal is between 0.40 and 0.70. The solid-state light-emitting element with a photonic crystal according to claim 3, wherein the predetermined wavelength band generated by the epitaxial film of the optoelectronic semiconductor is between 630 nm and 700 nm; the lattice constant of the two-dimensional photonic crystal is Between 50nm~900nm. A solid-state light-emitting element having a photonic crystal according to claim 3, wherein the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film is between 480 nm and 550 nm; and the lattice constant of the two-dimensional photonic crystal is Between 50nm~900nm. A solid-state light-emitting element having a photonic crystal according to claim 3, wherein the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film is between 420 nm and 480 nm; the lattice constant of the two-dimensional photonic crystal is Between 50nm~900nm. A solid-state light-emitting element having a photonic crystal according to claim 3, wherein the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film is between 380 nm and 420 nm; and the lattice constant of the two-dimensional photonic crystal is Between 50nm~900nm. A solid-state light-emitting element having a photonic crystal according to claim 1, wherein the photonic crystal is a type of photonic crystal, wherein the photonic crystal is a regular quadrangle and a regular triangular staggered arrangement, a string gear arrangement or a sun flower arrangement. An array of regular quadrilateral grooves; the filling rate of the photonic crystal is between 0.10 and 0.90; the lattice constant of the photonic crystal is Between 300nm~800nm. A solid-state light-emitting element having a photonic crystal according to claim 8, wherein the photonic crystal is a regular quadrangular groove array having a regular quadrangle and a regular triangular staggered array, the regular quadrangular groove array having a plurality of arrays The unit, each of the three adjacent array units is a common three-square quadrangular groove, and each array unit has a first array group and a second array group, and each of the first array groups is composed of six positive three sides. The array of groove arrays is formed to form a groove array group arranged in a regular hexagon shape, and each second array group is composed of six groove arrays arranged in a regular quadrangular arrangement and six regular triangles An array of aligned grooves is formed, the second array set of each array unit being around its first array set. The solid-state light-emitting element with a photonic crystal according to claim 9, wherein the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film is between 480 nm and 550 nm; the filling rate of the photonic crystal is between Between 0.40 and 0.70. The solid-state light-emitting element with a photonic crystal according to claim 9, wherein the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film is between 420 nm and 480 nm; the filling rate of the photonic crystal is between Between 0.40 and 0.70.