TW201006004A - A photonic crystal equipped solid state light-emitting component - Google Patents

Abstract

This invention is a photonic crystal equipped solid state light-emitting component. It comprises a baseboard, a opto-semiconductor epitaxial film formed on the baseboard for generating a pre-determined spectrum, an electrode unit that connects to the opto-semiconductor epitaxial film, a compound type reflective lens of a univariate photonic crystal that is positioned in between the opto-semiconductor epitaxial film and the baseboard mainly for the electrode unit to make electrical contact. The opto-semiconductor epitaxial film has a light exiting face and a back light face that opposites to the light existing face and is connected to the baseboard; and a positive/negative interface that forms in between the light exiting face and the back light face. The opto-semiconductor epitaxial film has a photonic crystal formed at the light exiting face. The photonic crystal is either a two-dimensional photonic crystal or a kind of photonic crystal. The electrode unit provides the electrons and electric holes of the opto-semiconductor epitaxial film to combine with the electrons and electric holes generated by the positive/negative interface.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a solid state light emitting device, and more particularly to a solid state light emitting device having a photonic crystal (PCs). [Prior Art] In the field of solid-state light-emitting devices, 'light-emitting diodes (LEDs) have gradually replaced the traditional incandescents and fires because of their small size, light weight, and fast response speed. A light source such as a fluorescent lamp is used as a lighting device. At present, common applications include large outdoor display billboards, traffic indicator numbers, and LCD backlights. In order to achieve higher brightness requirements such as automotive lights, projectors, etc., the common improvement methods can be seen by the technique of roughening the light surface, or by forming a decentralized Bragg mirror on the backlight surface. (distribution Bragg reflector; referred to as DBR) or one-dimensional photonic crystal and other technical means to increase the light extraction efficiency of the LED light-emitting surface and enhance its luminous brightness. Referring to Figure 1, Aur0lien David et al., Photonic crystal laser lift-off GaN light-emitting diodes in APPLIED PHYSICS LETTERS 88, 133514 (2006), reveals a two-dimensional photonic crystal (2DPCs). ) blue light emitting diode 1 . The manufacturing method of the light-emitting diode 1 is simply described below. On a sapphire substrate (not shown) on 201006004

On the arsenic medium of GaN-based and having positive and negative junctions (p_n juncti〇n), a plurality of p_electrodes 12 composed of Ru〇2/Ni/Ag and arranged at intervals are formed in sequence, and one surrounds the same a SiO 2 layer 13 of the p-electrode 12, and a gold (Au) layer 14 formed on the SiO 2 layer 13; subsequently, the gold layer 14 is transferred onto the -ain ceramic substrate 15 and subjected to laser lift-off (laser Hft) 〇ff, abbreviated as 〇 〇), the epitaxial film 11 is removed from the sapphire substrate (not shown); further, reactive ion etching (RIE) is applied to the remote crystal film 11 Forming a two-dimensional photonic crystal 16 thereon; finally, forming an n-electrode 17 on the two-dimensional photonic crystal 16 to complete the light-emitting diode 1q. The two-dimensional photonic crystal 16 is a circular concave arranged in a hexagonal shape. The array of grooves, and the light-emitting diode 1 has an emission wavelength of about 430 nm. The lattice constant of the two-dimensional photonic crystal 16 (iattice c〇nstant, referred to as 215, the filling rate (New 丨 ton & (^ 〇 1 *, 〇 〇 is 0_38 (ie, the groove diameter is 8111111; phase The adjacent groove pitch is 134 nm. Although the light-emitting diode 1 can control the variation of the field type and the divergence angle by using the two-dimensional photonic crystal 16, the luminance of the output of the overall light-emitting diode can be improved. However, Aui^ The two-dimensional photonic crystal 16 disclosed by Lien David et al. can only control the field type and increase the optical output power, but cannot reduce the full width at half maximum of the spectral signal peak of the illuminating light source. According to the above description, the illuminating signal peak of the illuminating light source is reduced. The invention relates to a subject of a solid-state light-emitting device, which is a subject of breakthrough in the field of solid-state light-emitting devices. [Summary of the Invention] The present invention mainly selects a two-dimensional photonic crystal structure and a photonic crystal (photonic quasi) Crystal; abbreviated as PQC) structure, one of which comes with - 维ne_dimensional photonic crystal (referred to as lDPCs)

Use together to reduce the full width at half maximum of the spectral signal peak. The main reason is to use a one-dimensional photonic crystal with a wide angle, a narrow wavelength and no absorption problem as a mirror, and a two-dimensional photonic crystal and photonic crystal with control field characteristics. The assistance of one of them can effectively achieve the purpose of narrowing the half-height of the peak of the illuminating signal. <Objectives> Accordingly, it is an object of the present invention to provide a solid state light-emitting element having a photonic crystal. Thus, the solid-state light-emitting element having a photonic crystal of the present invention comprises: a substrate, an optoelectronic semiconductor epitaxial layer formed on the substrate and generating a predetermined wavelength band, an electrode unit coupled to the epitaxial film of the optoelectronic semiconductor, and one for The composite mirror in which the electrode unit is electrically conductive. The optoelectronic semiconductor crystal film has a light emitting surface, a back surface opposite to the light emitting surface and connected to the substrate, and a positive and negative junction formed between the light emitting surface and the backlight surface. The photo-electric semiconductor crystal film is formed with a photonic crystal on the light-emitting surface. The photon body is one of a two-dimensional photonic crystal and a type of photonic crystal. The electrode and the electrons and holes of the electron-emitting semiconductor epitaxy are combined to form an electron hole pair on the positive and negative junctions. The composite mirror has a one-dimensional photonic crystal sandwiched between the epitaxial film of the optoelectronic semiconductor and the substrate. The effect of the invention is that, by integrating one-dimensional photonic crystal with one of two-dimensional photonic crystals and photonic crystals, the half-height value of the signal peak of the luminescence spectrum 201006004 is appropriately reduced, and the luminance of the solid-state illuminating element is improved. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. Before the present invention is described in detail, it is to be noted that in the following description, similar elements are denoted by the same reference numerals. <First Preferred Embodiment> Referring to Fig. 2, a first preferred embodiment of a solid-state light-emitting element having a photonic crystal of the present invention comprises: a substrate 2 formed on the substrate 2 and generating a pre-turn band The photo-electric semiconductor crystal film 3, an electrode unit 5 connected to the optoelectronic semiconductor crystal film 3, and a composite reflector 6 for electrically conducting the electrode unit 5. In the solid-state light-emitting element with photonic crystal of the present invention, the first preferred embodiment is a vertical feedthrough formed by a wafer-to-wafer technique and a wafer bonding technique (vertical feedthr). a light emitting diode; therefore, the substrate 2 is a doped germanium (Si) substrate. Regarding the substrate separation technique and the wafer bonding technique, it is not a technical feature of the present invention. The optoelectronic semiconductor epitaxial film 3 has a light emitting surface 31, a backlight surface 32 opposite to the light emitting surface 31 and connected to the substrate 2, and a positive and negative junction 33 formed between the light emitting surface 31 and the backlight surface 32. . The photo-semiconductor epitaxial film 3 is formed on the light-emitting surface 31 with a photonic crystal 4, which is one of a two-dimensional photonic crystal (2D pCs) and a photon of 201006004 (PQC); In the first preferred embodiment, the light 1 crystal 4 is a two-dimensional photonic crystal. The two-dimensional photonic crystal is a regular hexagonal arrangement or a regular square (an array of circular grooves 41 called a display arrangement (as shown by the attachment ι) can also be a circular concave arranged in a honeycomb shape. The groove array is as shown in the attachment 2; in the first preferred embodiment of the invention, the two-dimensional: sub-crystal is a circular groove Μp train arranged in a regular hexagon. Here, when the fill rate is too large, the field shape of the light source is narrower and narrower, but the electrical characteristics are less effective. Conversely, when the fill rate is too small, the field pattern of the light source will be widened. And the light characteristics are also poor. Therefore, preferably, the filling rate of the two-dimensional photonic crystal is between 0.10 and 0.90; more preferably, the one-dimensional photonic crystal of the stomach is a circular groove array arranged in a regular hexagon 歹J „海一维The filling rate of the photonic crystal is between 仂~〇7〇, and the filling rate of the one-dimensional photonic crystal is more than 〇%~〇6〇; the photoelectric semi-conductive film 3 is produced. The predetermined band is between 63〇nm and 700nm. The value of 仵S, the lattice constant (4) value to be considered when designing a two-dimensional photonic crystal, is mainly based on the riding band of the light source; 'The a value of the two-dimensional photonic crystal must be less than /n, and the value of a is the same as the magnitude of the heart, which is the predetermined wavelength band, and η is the refractive index (ref_Ve index) of the material of the photonic crystal itself. Therefore, preferably, The lattice constant of the two-dimensional photonic crystal of the first preferred embodiment is between 5 G nm and _ nm. In the first preferred embodiment of the present invention, the photo-semiconductor crystal film 3 is produced. The predetermined wavelength band i 65〇nm; the 玨 value of the two-dimensional photonic crystal Zhao is 200.0 rnn and the filling rate is 〇·52; that is, 'each round The diameter of the groove 41 is 201006004 104.0 run, and the spacing between each two adjacent circular grooves 41 is 96 〇 nm. The electrode single 7L 5 is used for the electron and the hole of the optoelectronic semiconductor epitaxial film 3 in the positive and negative connection. The surface 33 is formed by electron-hole pair recombination, and has a first electrode 51 formed on the light-emitting surface 31 and a second electrode 52 formed on a lower surface of the substrate 2. The composite reflection The mirror 6 has a -dimensional photonic crystal 62 sandwiched between the epitaxial film 3 of the optoelectronic semiconductor and the substrate 2, sandwiched between the epitaxial film 3 of the optoelectronic semiconductor and the one-dimensional photonic crystal 62 a current spreading layer 61, a wafer bonding layer 63 φ ' lost between the one-dimensional photonic crystal 62 and the substrate 2, and a plurality of spaced-apart photonic crystals 62 are interposed therebetween and interposed therebetween. The conductive pillar 64 between the layer and the wafer bonding layer 63. In the first preferred embodiment of the invention, the one-dimensional photonic crystal 62 is a pair of Ti〇2/Si〇2 dielectric layers The thickness of (dlelectric layer ^b) and the addition of 2 and si〇2 are 87 nm#1G5 nm, respectively. The composite mirror 6 of the present invention is mainly The current distribution layer 61, the conductive pillars, and the one-dimensional photonic crystal 62 are used to simultaneously provide a current vertical injection (4)^ ίη_〇η)

And the role of light source reflection. G <Second Preferred Embodiment> Referring again to Figure 2, a second embodiment of the (four) light-emitting element of the present invention having a photonic crystal, the preferred embodiment is substantially the same as the first preferred embodiment, and the difference is The detailed condition of the one-dimensional photonic crystal 62 and the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 are between 48 〇 nm and 55 〇 nm. In the second preferred embodiment of the present invention, the predetermined wavelength band generated by the optoelectronic semiconductor crystal film 3 is 530 nm, and the thickness of the one-dimensional photonic crystal 丨〇 丨〇 2 10 201006004 and SiO 2 is 67.95 nm, respectively. With 83.05 nm. <Third Preferred Embodiment> Referring again to Fig. 2, a third preferred embodiment of the solid-state light-emitting element of the present invention having a photonic crystal is substantially the same as the first preferred embodiment, and the difference lies in The detail condition of the one-dimensional photonic crystal 62, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3, and the lattice constant of the two-dimensional photonic crystal. Preferably, the predetermined wavelength band produced by the optoelectronic semiconductor crystal film 3 is between 420 nm and 480 nm; the lattice constant of the two-dimensional photonic crystal is between 50 nm and 900 nm. In the third preferred embodiment of the present invention, the film structure of the optoelectronic semiconductor epitaxial film 3 is n-GaN/(InGaN/GaN)/p-GaN, wherein n-GaN, InGaN, GaN, and p- The thickness of GaN is 230 nm, 3 nm, 7 nm and 230 nm, respectively, and the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film 3 is 433 nm; the lattice constant of the two-dimensional photonic crystal is 209.1 nm; The electrode 51 is Ti/Al/Ni/Au, the second electrode 52 is Ti/Pt/Au; the current spreading layer 61 is indium tin oxide (ITO) having a thickness of 300 nm; and the TiO2 and SiO2 of the one-dimensional photonic crystal 62 The refractive indices at 430 nm are 2.52 and 1.48, respectively, and the thicknesses of TiO2 and SiO2 are 58.96 nm and 75.04 nm, respectively. The one-dimensional photonic crystal 62 forms an omnidirectional optical band gap in the band of 417 nm to 450 nm. The light source generated by the third preferred embodiment is reflected back to the light exit surface 31; the wafer bonding layer 63 is Au/Ti; each conductive pillar 64 is a diameter of 50 μm and the height is 7 μιη Cr/Au. Referring to FIG. 3, the scanning electron microscope 11 201006004 mirror (SEM) image of the third preferred embodiment of the present invention shows that the lattice constant of the two-dimensional photonic crystal is 209.1 nm ° and the fourth preferred embodiment. Referring again to FIG. 2, a fourth preferred embodiment of the solid state light-emitting element of the present invention having a photonic crystal is substantially the same as the first preferred embodiment, except that the one-dimensional photonic crystal 62 is The detailed condition, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3, and the applicable range of the two-dimensional photonic crystal. Preferably, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 of the fourth preferred embodiment of the present invention is between 380 nm and 420 nm; the lattice constant of the two-dimensional photonic crystal is between 50 Between nm and 900 nm. In the fourth preferred embodiment of the present invention, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is 400 nm, and the thickness of the TiO2 and SiO2 of the one-dimensional photonic crystal 62 is 46.20 nm and 63.80 nm, respectively. The detailed conditions of the photonic crystals (2DPCs) 4 and the one-dimensional photonic crystals (lDPCs) 62 of the first to fourth preferred embodiments of the present invention are simply summarized in the following table. 1. Example 1 2 3 4 predetermined band (nm) 650 530 433 400 lDPCs Ti02 Thickness (nm) 87 67.95 58.96 46.20 Si〇2 Thickness (nm) 105 83.05 75.04 63.80 Lattice constant (nm) 200 200 209.1 200 Groove diameter (nm) 104 104 109.6 104 2DPCs Concave Groove pitch (nm) 96 96 99.5 96 Filling rate 0.52 0.52 0.52 0.52 Groove depth (mn) 300 170 170 170 12 201006004 <Fifth preferred embodiment> Referring to Figures 4 and 5, the present invention has a photonic crystal One of the solid state light-emitting elements is the same as the fourth preferred embodiment. It is not: the photonic crystal 4 is a photonic crystal (PQC). The photon day a is a regular quadrilateral concave with a regular quadrilateral and a regular triangular arrangement, a pmwheel arrangement (as shown in Annex 3) or a sun flower (fib〇nacc〇 arrangement (as in Annex 4). An array of slots 42; in the fifth preferred embodiment of the present invention, the 'S-type photonic crystal is a regular quadrilateral groove 42p arranged in a regular quadrilateral and a regular triangular shape. Preferably, the photon is such a photon. The filling rate of the crystal is between 0.10 and 0.90; the lattice constant of the photonic crystal is between 300 nm and 800 nm. The array of regular quadrilateral grooves 42 has a plurality of array elements 42 〇; and each of the three The adjacent array elements 42A share a common square regular groove 42 (as shown in Fig. 5.) Each array unit 42 has a first array group 421 and a second array group 422 (as shown in Fig. 4). Each of the first array groups 421 is formed by six e-shaped arrays of grooves arranged in a regular triangle to form a groove array group arranged in a regular hexagon (FIG. 4 is a square-shaped groove 42 not shown). Each second array group 422 is formed by six spaced apart positive four sides The array of aligned grooves is formed with eight arrays of grooves arranged in a regular quadrilateral (Fig. 4 shows a regular quadrilateral groove 42.) The second array set 422 of each array unit 42 is surrounded by its first Array group 421. More preferably, the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is between 480 nm and 550 nm; the filling rate of the photonic crystal is between 〇40 and 0.70; More preferably, the filling rate of the photonic crystal is between 13 201006004 0.60 and 0.70. In the fifth preferred embodiment of the present invention, the lattice constant of the photonic crystal, the width of the regular quadrangular groove 42 , The pitch and filling ratio of the regular quadrangular groove 42 are 350 nm, 220 nm, 130 nm, and 0.63, respectively. <Sixth Preferred Embodiment> Referring again to Fig. 5, the sixth solid-state light-emitting element of the present photonic crystal is sixth. The preferred embodiment is substantially the same as the fifth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrangular groove 42, the pitch of the regular quadrilateral groove 42, and the filling rate are 450, respectively. Nm, 280 nm, 170 nm and 0·62 〇< seventh better EXAMPLES Referring again to Figure 5, a seventh preferred embodiment of a solid state light-emitting element having a photonic crystal of the present invention is substantially identical to the fifth preferred embodiment. The difference lies in the lattice of the photonic crystal. The constant, the width of the regular quadrangular groove 42 and the pitch and filling ratio of the regular quadrilateral groove 42 are 550 nm, 330 nm, 220 nm and 0·60 〇, respectively.

<Eighth Preferred Embodiment> Referring again to Fig. 5, an eighth preferred embodiment of the solid-state light-emitting element of the present invention having a photonic crystal is substantially the same as the fifth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrilateral groove 42, the pitch and filling ratio of the regular quadrilateral groove 42 are 750 nm, 450 nm, 300 nm and 0.60, respectively. The detailed conditions of the photonic crystal (PQC) 4 of the fifth to eighth preferred embodiments of the present invention are simply arranged in the following Table 2. Table 2. 14 201006004 Photonic crystals 567 晶 lattice constant (nm) 350 450 550 750 C3 slot width (nm) 220 280 330 450 Groove spacing (nm) 130 170 220 300 Filling rate 0.63 0.62 0.60 0.60 < Ninth preferred embodiment >

Referring again to Figure 5, a ninth preferred embodiment of a solid state light emitting device having a photonic crystal of the present invention is substantially identical to the fifth preferred embodiment. The difference is that the predetermined wavelength band generated by the optoelectronic semiconductor epitaxial film 3 is between 420 nm and 480 nm; the filling rate of the photonic crystal is between 0.40 and 0.70; more preferably, the The filling rate of a photonic crystal is between 0.50 and 0.60. In the ninth preferred embodiment of the present invention, the lattice constant of the photonic crystal, the width of the regular quadrilateral groove 42, the pitch and filling ratio of the regular quadrilateral groove 42 are 350 nm, 203 nm, 147 nm and 0_58, respectively. <Tenth Preferred Embodiment> Referring again to Fig. 5, a tenth preferred embodiment of the solid state light-emitting element of the present invention having a photonic crystal is substantially the same as the ninth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrilateral groove 42, the pitch and filling ratio of the regular quadrilateral groove 42 are 450 nm, 264 nm, 1 86 nm and 0.57 〇 < DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring again to Figure 5, an eleventh preferred embodiment of a solid state light emitting device having a photonic crystal of the present invention is substantially identical to the ninth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrilateral groove 42 is 15 201006004 degrees, the pitch and filling ratio of the regular quadrilateral groove 42 are 550 nm, 305 nm ' 245 nm and 0.55 〇 < tenth Second Preferred Embodiment> Referring again to Figure 5, a twelfth preferred embodiment of a solid state light emitting device having a photonic crystal of the present invention is substantially identical to the ninth preferred embodiment. The difference is that the lattice constant of the photonic crystal, the width of the regular quadrangular groove 42 , the pitch and filling ratio of the regular quadrilateral groove 42 are 750 nm, 424 nm, 326 nm and 0.57 °, respectively. The fine β-conditions of the photonic crystal (PQC) 4 of the second preferred embodiment are simply arranged in the following Table 3. Table 3 · Example photonic crystals Ninety-one eleven twelve lattice constants (nm) 350 450 550 750 Groove width (nm) 203 264 305 424 Groove pitch (nm) 147 186 245 326 Filling rate 0.58 0.57 0.55 0.57 <analysis data>

Referring to FIG. 6, according to the frequency-pair wave vector and the frequency-to-photon state density (DOS) analysis data of the third preferred embodiment of the present invention, the triangle shown in the left figure of FIG. 6 is The circular and square curves represent the three energy level modes of the right image of Figure 6, respectively. From the left diagram of Figure 6, we can see the three energy modes of the frequency between 0.523 a / λ ~ 0.445 a / λ (that is, the wavelength between 399.81 nm ~ 469.89 nm), in the corresponding After the right diagram of FIG. 6, the three energy modes have a sub-state density increase in the light 16 201006004 sub-state density between 0.49 a/λ and 0.47 a/λ (ie, in the 426.73 nm to 444.89 nm band); The two-dimensional photonic crystal 4 of the third preferred embodiment provides a photonic cavity for photons in the frequency band of 0.523 a/λ~0.445 a/λ, thus increasing its light out efficiency. Further, referring to the spectrogram of the third preferred embodiment of the present invention, the full width at half maximum of the spectral signal peak of the third preferred embodiment is only about 5 nm, and no luminescence with a two-dimensional photonic crystal is used. The half-turn width of the spectral signal of the diode (LED) is up to 30 nm. It is apparent that the third preferred embodiment of the present invention uses the one-dimensional photonic crystal 62 as a mirror with high reflectivity. The photonic crystal (ie, two-dimensional photonic crystal) 4 changes the behavior of light propagating within the semiconductor waveguide to form a light guide similar to the resonant cavity, which greatly reduces the half-width of the spectral signal peak. The solid-state light source provided by the invention has a purer spectral signal peak, and the brightness and yield can be greatly improved by using the fluorescent powder to encapsulate the contribution of the white light source. Referring to FIG. 8, the optical output power versus injection current (electroscope) graph of the third preferred embodiment of the present invention can be seen as compared with an LED that does not use a two-dimensional photon 曰曰 曰曰 '. The light output f rate of the third preferred embodiment is relatively increased by 10%. It is apparent that the third preferred embodiment of the present invention can simultaneously increase the overall light wheel output power. Therefore, the brightness of the white light source packaged by the solid-state light-emitting element of the present invention and used in combination with the f-powder is further improved. In summary, the solid-state light-emitting element with photonic crystal of the present invention uses a one-dimensional photonic crystal having a wide angle, a narrow wavelength, and no absorption problem as a mirror, and is equipped with a control field type. The feature of one of the photon B-body and the photonic crystal can effectively achieve the purpose of the present invention by achieving the half-height width of the narrowed luminescence signal peak and increasing the luminance of the solid-state light-emitting element. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are all It is still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front elevational view showing a blue light emitting diode having a two-dimensional photonic crystal disclosed by Aur01ien David et al.; FIG. 2 is a front elevational view showing solid state light emission of a photonic crystal of the present invention. A first preferred embodiment of the device; FIG. 3 is an SEM image showing a two-dimensional photonic crystal according to a third preferred embodiment of the present invention; and a circle 4 is a t-picture '(4) a type of photonic crystal of a preferred embodiment;

Circle 5疋 is not intended to illustrate the regular quadrilateral groove array of the photonic crystal of the fifth preferred embodiment of the present invention; 4 FIG. 6 is—frequency versus wave vector and frequency versus photon state density (D handsome: data graph' The energy level of the photon of the third preferred embodiment of the present invention, FIG. 7 is a spectrum diagram, the field shape of the spectrum; and FIG. 8 is the current current graph of the present invention. The third preferred embodiment of the present invention is illustrated. Optical output power pair injection 18 of the preferred embodiment of light 2 201006004 Annex 1: Two-dimensional photonic crystal of a circular groove array arranged in a regular quadrilateral. Annex 2: Two-dimensional photonic crystal of a circular groove array arranged in a honeycomb shape 〇 Attachment 3: Photonic crystals such as a regular quadrilateral groove array arranged in a string of gears. Annex 4: Photonic crystals such as a regular quadrilateral groove array arranged in a sun flower arrangement.

19 201006004 [Explanation of main component symbols] 2...... ...·Substrate 422...··Second array group 3... Photoelectric semiconductor solar film 5... •...electrode unit 31 •....——light-emitting surface 51 ····· - the first electrode 32 "... •...the backlight surface 52·..·...the second electrode 33·.···•...the positive and negative junction 6...•...the composite mirror 4...•...photonic crystal 61 ····....·current distribution layer 41 ·····.......circular groove 62·..·· -----dimensional photonic crystal 42... ----square groove 63"... •... wafer bonding layer 420... •...array unit 64••... •...conductive column 421... •...first array group 20

Claims (1)

201006004 X. Patent application scope: 1. A solid-state light-emitting element with a photonic crystal, comprising: a substrate; an optoelectronic semiconductor epitaxial film formed on the substrate and generating a predetermined wavelength band, having a light-emitting surface, opposite to the light-emitting surface a backlight surface connected to the substrate and a positive and negative junction formed between the light-emitting surface and the backlight surface. The photoelectric semiconductor epitaxial film forms a photonic crystal on the light-emitting surface, and the photonic crystal is a two-dimensional photon. a crystal and a type of photonic crystal, wherein the 'one electrode unit' is coupled to the optoelectronic semiconductor epitaxial film and the electrons and holes of the optoelectronic semiconductor epitaxial film are combined at the positive and negative junctions to form an electron hole pair; A composite mirror for electrically conducting the electrode unit has a one-dimensional photonic crystal sandwiched between the epitaxial film of the optoelectronic semiconductor and the substrate. ❹ 2. Solid-state luminescence with photonic crystals as described in the photon clause according to the scope of the patent application An array of grooves, between the two turns. The solid-state light-emitting element with a photonic crystal according to the above-mentioned patent application No. 21 201006004, wherein the predetermined wavelength band produced by the photoelectric semiconductor film is between 630 nm and 700 nm; the two-dimensional photonic crystal The lattice constant is between 50 nm and 900 nm. 5. The solid-state light-emitting element with a photonic crystal according to claim 3, wherein the predetermined wavelength band produced by the epitaxial film of the optoelectronic semiconductor is between 480 nm and HO nm; the two-dimensional photonic crystal The lattice constant is between 50 nm and 900 nm. 6. The solid-state light-emitting element with a photonic crystal according to claim 3, wherein the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film is between 420 nm and 480 nm; the two-dimensional photonic crystal The lattice constant is between 50 nm and 900 nm. The solid-state light-emitting element with a photonic crystal according to claim 3, wherein the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film is between 380 nm and 420 nm; the two-dimensional photonic crystal The lattice constant is between 50 nm and 900 nm. 8_ The solid-state light-emitting element having a photonic crystal according to the scope of claim 1 'where the photonic crystal is a type of photonic crystal, the photonic crystal The body is a regular quadrilateral groove array with a regular quadrilateral and a regular triangular staggered arrangement, a string gear arrangement or a sun flower arrangement; the filling rate of the photonic crystal is between 0.10 and 0.90; the lattice constant of the photonic crystal It is between 300 nm and 800 nm. 9. The solid-state light-emitting element with a photonic crystal according to claim 8, wherein the photonic crystallizer is an array of regular quadrangular grooves arranged in a regular quadrilateral and a regular triangular shape, the regular quadrilateral groove array With 22 201006004 having a plurality of array elements, each of the three adjacent array units is a common three-square quadrangular groove, and each array unit has a first array = and a second array group, each of the first array groups is Formed by six arrays of grooves arranged in a regular triangle to form a groove array group arranged in a regular hexagon shape, each second array group is composed of six groove arrays arranged in a regular quadrangle Six arrays of grooves arranged in a regular triangle shape, the second array group of each array unit being around its first array group. The solid-state light-emitting element with a photonic crystal according to claim 9, wherein the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film is between 480 nm and 550 nm; The fill rate is between 0.40 and 〇·7〇. The solid-state light-emitting element with a photonic crystal according to claim 9, wherein the predetermined wavelength band produced by the optoelectronic semiconductor epitaxial film is between 420 nm and 480 nm; filling of the photonic crystal The rate is between 0.40 and 0.70. The solid-state light-emitting element having a photonic crystal according to any one of claims 1 to 11, wherein the electrode unit has a first electrode formed on the light-emitting surface and one formed under the substrate The second electrode of the surface. The solid-state light-emitting element with a photonic crystal according to any one of the preceding claims, wherein the composite mirror has a sandwiched between the epitaxial film of the optoelectronic semiconductor and the one-dimensional photonic crystal. a current spreading layer, a wafer bonding layer sandwiched between the one-dimensional photonic crystal and the substrate, and a plurality of spaced-apart photonic crystals are interposed between the two-dimensional photonic crystal and sandwiched between the current and current layers A conductive pillar between the wafer bonding layers. twenty four