TWI442589B - Semiconductor device and electronic apparatus - Google Patents
Semiconductor device and electronic apparatusInfo
- Publication number
- TWI442589B TWI442589B TW099142874A TW99142874A TWI442589B TW I442589 B TWI442589 B TW I442589B TW 099142874 A TW099142874 A TW 099142874A TW 99142874 A TW99142874 A TW 99142874A TW I442589 B TWI442589 B TW I442589B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- electronic apparatus
- electronic
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009298365A JP2011138950A (ja) | 2009-12-28 | 2009-12-28 | 半導体装置及び電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201133907A TW201133907A (en) | 2011-10-01 |
| TWI442589B true TWI442589B (en) | 2014-06-21 |
Family
ID=44174805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099142874A TWI442589B (en) | 2009-12-28 | 2010-12-08 | Semiconductor device and electronic apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8513586B2 (zh) |
| JP (1) | JP2011138950A (zh) |
| KR (1) | KR20110076770A (zh) |
| CN (1) | CN102110703B (zh) |
| TW (1) | TWI442589B (zh) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011138950A (ja) * | 2009-12-28 | 2011-07-14 | Sony Corp | 半導体装置及び電子機器 |
| JP2013093553A (ja) * | 2011-10-04 | 2013-05-16 | Canon Inc | 光電変換装置及びその製造方法、並びに光電変換システム |
| JP5456084B2 (ja) * | 2012-02-07 | 2014-03-26 | 株式会社東芝 | 固体撮像素子 |
| US8941203B2 (en) | 2012-03-01 | 2015-01-27 | Raytheon Company | Photodetector with surface plasmon resonance |
| US8957490B2 (en) * | 2013-06-28 | 2015-02-17 | Infineon Technologies Dresden Gmbh | Silicon light trap devices |
| JP6398214B2 (ja) * | 2014-02-17 | 2018-10-03 | 株式会社ニコン | ピンホール装置及び露光装置 |
| US10403662B2 (en) | 2015-02-26 | 2019-09-03 | Sony Semiconductor Solutions Corporation | Solid-state imaging element and electronic apparatus |
| US9404804B1 (en) * | 2015-04-02 | 2016-08-02 | Palo Alto Research Center Incorporated | Thermal sensor with infrared absorption membrane including metamaterial structure |
| WO2017132283A1 (en) * | 2016-01-25 | 2017-08-03 | The Regents Of The University Of California | Nano-scale pixelated filter-free color detector |
| CN108615736A (zh) * | 2016-12-11 | 2018-10-02 | 南京理工大学 | 制作在传感器表面的可提高光传感器灵敏度的结构 |
| JP7090620B2 (ja) * | 2017-08-09 | 2022-06-24 | 株式会社カネカ | 光電変換素子および光電変換装置 |
| CN109951661A (zh) * | 2019-04-23 | 2019-06-28 | Oppo广东移动通信有限公司 | 图像传感器及电子设备 |
| CN110049261B (zh) * | 2019-04-23 | 2022-04-12 | Oppo广东移动通信有限公司 | 一种像素结构、图像传感器及终端 |
| CN110087005B (zh) * | 2019-04-23 | 2021-07-09 | Oppo广东移动通信有限公司 | 一种彩色偏振式cis及图像处理方法、存储介质 |
| CN110324545B (zh) * | 2019-06-11 | 2022-01-28 | Oppo广东移动通信有限公司 | 一种像素结构、图像传感器及终端 |
| CN110166698A (zh) * | 2019-06-28 | 2019-08-23 | Oppo广东移动通信有限公司 | 对焦方法、互补金属氧化物图像传感器、终端及存储介质 |
| CN110620861B (zh) * | 2019-09-24 | 2021-10-15 | Oppo广东移动通信有限公司 | 图像传感器、相机模组和终端 |
| US11227960B2 (en) * | 2020-03-16 | 2022-01-18 | Globalfoundries U.S. Inc. | Multifunctional metamaterial-based optical device |
| US11355540B2 (en) * | 2020-04-15 | 2022-06-07 | Visera Technologies Company Limited | Optical device |
| TWI756764B (zh) * | 2020-07-31 | 2022-03-01 | 國立中興大學 | 光電流電極及光電免疫感測裝置 |
| CN113270725B (zh) * | 2021-05-12 | 2023-05-23 | 中国人民解放军空军工程大学 | 基于人工表面等离激元的超宽带、大角度掠入射吸波体 |
| TW202326102A (zh) * | 2021-10-14 | 2023-07-01 | 大陸商廣州印芯半導體技術有限公司 | 生物分子影像感測器及其用於偵測生物分子的方法 |
| US20250022897A1 (en) * | 2021-12-08 | 2025-01-16 | Sony Semiconductor Solutions Corporation | Light detection device and optical filter |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5886374A (en) * | 1998-01-05 | 1999-03-23 | Motorola, Inc. | Optically sensitive device and method |
| US6864557B2 (en) * | 2001-06-18 | 2005-03-08 | Foveon, Inc. | Vertical color filter detector group and array |
| US7109517B2 (en) * | 2001-11-16 | 2006-09-19 | Zaidi Saleem H | Method of making an enhanced optical absorption and radiation tolerance in thin-film solar cells and photodetectors |
| AU2003269501A1 (en) * | 2002-10-11 | 2004-05-04 | Canon Kabushiki Kaisha | Sensor |
| EP1737047B1 (en) * | 2004-04-05 | 2011-02-23 | NEC Corporation | Photodiode and method for manufacturing same |
| US7592255B2 (en) * | 2004-12-22 | 2009-09-22 | Hewlett-Packard Development Company, L.P. | Fabricating arrays of metallic nanostructures |
| US7586167B2 (en) * | 2006-05-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Detecting plasmons using a metallurgical junction |
| EP2062091A1 (en) * | 2006-09-12 | 2009-05-27 | Eastman Kodak Company | Plasmonic elements |
| JP5273932B2 (ja) * | 2007-03-23 | 2013-08-28 | キヤノン株式会社 | 光検出素子及び光検出方法、撮像素子及び撮像方法 |
| JP5300344B2 (ja) * | 2007-07-06 | 2013-09-25 | キヤノン株式会社 | 光検出素子及び撮像素子、光検出方法及び撮像方法 |
| JP4621270B2 (ja) * | 2007-07-13 | 2011-01-26 | キヤノン株式会社 | 光学フィルタ |
| US20090040132A1 (en) * | 2007-07-24 | 2009-02-12 | Northeastern University | Anisotropic metal-dielectric metamaterials for broadband all-angle negative refraction and superlens imaging |
| KR101385250B1 (ko) | 2007-12-11 | 2014-04-16 | 삼성전자주식회사 | Cmos 이미지 센서 |
| EP2109147A1 (en) * | 2008-04-08 | 2009-10-14 | FOM Institute for Atomic and Molueculair Physics | Photovoltaic cell with surface plasmon resonance generating nano-structures |
| US8866000B2 (en) * | 2009-07-31 | 2014-10-21 | Corey A. Weiss | Ultra-efficient energy conversion device for converting light to electricity by rectifying surface plasmon polaritons |
| JP2011043681A (ja) * | 2009-08-21 | 2011-03-03 | Canon Inc | 光学素子、光検出素子、光変調素子、撮像素子及びカメラ |
| JP2011138950A (ja) * | 2009-12-28 | 2011-07-14 | Sony Corp | 半導体装置及び電子機器 |
-
2009
- 2009-12-28 JP JP2009298365A patent/JP2011138950A/ja active Pending
-
2010
- 2010-12-08 TW TW099142874A patent/TWI442589B/zh not_active IP Right Cessation
- 2010-12-14 US US12/967,815 patent/US8513586B2/en not_active Expired - Fee Related
- 2010-12-15 KR KR1020100127994A patent/KR20110076770A/ko not_active Withdrawn
- 2010-12-21 CN CN201010598252.0A patent/CN102110703B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102110703B (zh) | 2014-10-29 |
| KR20110076770A (ko) | 2011-07-06 |
| US8513586B2 (en) | 2013-08-20 |
| TW201133907A (en) | 2011-10-01 |
| JP2011138950A (ja) | 2011-07-14 |
| US20110155891A1 (en) | 2011-06-30 |
| CN102110703A (zh) | 2011-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |