TWI440225B - Method for manufacturing light emitting diode - Google Patents

Description

Method for manufacturing light emitting diode

The present invention relates to a method of fabricating a semiconductor, and more particularly to a method of fabricating a light emitting diode.

Light-emitting diodes have been used in more and more occasions due to their high luminous efficiency, low energy consumption, and no pollution. They have a tendency to replace traditional light sources.

The light-emitting diode generally includes a susceptor, two electrodes coupled to the pedestal, a luminescent wafer fixed in the reflective cup of the pedestal and connected to the two electrodes, and an encapsulant that encapsulates the wafer. The pedestal and reflector cup of the light-emitting diode are usually integrally formed on the electrode by insert molding. In this method, the electrode is first placed in the mold, the electrode is closely attached to the mold, and the cavity for forming the pedestal and the reflective cup is reserved, and then the fluid material is injected into the cavity, and the liquid material is coated after being solidified. The electrode is housed to form a pedestal with an electrode embedded therein and a reflective cup integrally connected to the susceptor for subsequent processing.

However, when the contact between the mold and the electrode is not tight, a gap is left between the two. Therefore, the injected fluid material easily penetrates through the slit and extends to the surface of the electrode. The fluid material is solidified to form a burr structure connected to the reflective cup, which affects the process yield of the light-emitting diode.

In view of the above, it is necessary to provide a manufacturing method for improving the yield of the light-emitting diode.

A method of fabricating a light emitting diode, comprising the steps of: providing a pin structure comprising an isolated plate-shaped first electrode and a second electrode, the pin structure having a top surface and opposite to the top surface a first mold, the first mold abuts the top surface of the lead structure, and together with the top surface of the lead structure, encloses a first cavity; and injects the first material into the first cavity Forming a barrier layer that is annular and spans over the first electrode and the second electrode; providing a second mold that together with the bottom surface of the lead structure encloses a substrate cavity The second mold, the top surface of the lead structure and the outer surface of the barrier layer adjacent to the top surface of the lead structure together define an annular second cavity; and the second material is injected into the substrate cavity and the second cavity to form a base And a reflective cup; removing the mold; etching the barrier layer to expose a portion of the upper surface of the pin structure covered by the barrier layer; disposing a light-emitting element on the pin structure and electrically connecting to the first electrode and a second electrode; and forming a light-emitting element Loaded layer.

In the above method for manufacturing a light-emitting diode, a barrier layer is formed on the lead structure before injection molding to form the reflective cup and the pedestal, and the barrier layer covers a part of the surface of the lead structure, so that the mold is removed from the mold cavity. The part is in close contact with the pin structure to prevent the injected fluid material from penetrating into the gap and covering the surface of the lead structure to form a burr. In addition, the barrier layer is different from the material of the reflective cup, so that when the barrier layer is removed after the injection molding is completed, an etching solution that does not react with the reflective cup may be used to etch the barrier layer, and the barrier layer may be removed to form a smooth and burr-free layer. The reflective cup can also avoid the etching solution of the etching liquid to affect the optical effect of the light-emitting diode, and can effectively improve the yield of the product in the packaging process.

The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings.

The invention will be further described in detail below with reference to the accompanying drawings.

The manufacturing method of the light-emitting diode 100 of the present invention mainly includes the following steps.

The first step: as shown in FIG. 1 , a lead structure 10 is provided, which includes a first electrode 11 and a second electrode 12 , and the first electrode 11 and the second electrode 12 are spaced apart from each other and have a rectangular flat shape. The lead structure 10 is made of a material having high conductivity such as metal or ITO (Indium Tin Oxide).

Second step: As shown in FIG. 2, a mold 20 is provided for covering a portion of the lead structure 10. The mold 20 includes a top mold 22. The top mold 22 is used to abut the upper surface of the lead structure 10. The top mold 22 includes a first module 221 and a second module 223 adjacent to the first module 221.

The first module 221 includes a top end 2211 and a bottom end 2212 extending from a middle portion of the top end 2211 to the lead structure 10. The first module 221 has a "T" shape, that is, the width of the top end 2211 is greater than the width of the bottom end 2212. The bottom end 2212 of the first module 221 covers both ends of the first electrode 11 and the second electrode 12 adjacent to each other. A runner 224 is disposed on the top end 2211.

The second module 223 is disposed outside the first module 221 and is attached to the outer side of the top end 2211. The height of the second module 223 is the same as the height of the first module 221, and the bottom surface of the top end 2211 of the first module 221 and the side surface of the bottom end 2212 are co-circulated with the second module 223 to form a mutual symmetry. An annular first cavity 225 is located above the first cavity 225 and communicates with the first cavity 225.

The third step: as shown in FIG. 3, the resin material is injected into the first cavity 225 formed by the mold 20 along the runner 224 to form a barrier layer 30. The barrier layer 30 is annular and is located at the pin. The surface of the structure 10.

Fourth Step: As shown in FIGS. 4 to 5, some of the elements of the mold 20 are replaced to form a second cavity 228. Specifically, the mold 20 includes a bottom mold 21 for abutting against a lower surface of the lead structure 10 to carry the lead structure 10. The bottom mold 21 includes a recess 211, and the recess 211 forms a substrate cavity 212 with the lower surface of the lead structure 10. The second module 223 is removed, and a third module 226 is disposed on the outer surface of the first module 221, and the peripheral dimension of the third module 226 is along the top end 2211 of the first module 221. The size of the bottom end 2212 is gradually reduced. Further, a fourth module 227 is added, and the fourth module 227 is cylindrical and located at the periphery of the third module 226. The third module 226 is spaced apart from the third module 226 and cooperates with each other to form a second cavity 228. The reflector cup 40 is formed by injection molding.

The fifth step: as shown in FIG. 6 , a fluid plastic material is injected into the second cavity 228 and the substrate cavity 212 , and the fluid plastic material fills the cavity of the second cavity 228 and the substrate cavity 212 . The solidification becomes solid to form the reflecting cup 40 and the susceptor 50, respectively. The reflective cup 40 includes an upper surface 41 and a lower surface 42, and the width of the upper surface 41 is smaller than the width of the lower surface 42. The surface of the reflective cup 40 is formed with a high reflectivity material, and the material of the reflective cup 40 is The material of the barrier layer 30 is different. Since the barrier layer 30 covers the upper surface of the first electrode 11 and the second electrode 12 in advance, when there is a gap between the first electrode 11, the second electrode 12 and the fourth module 227, the fluid plastic material is not A portion of the surface of the first electrode 11 and the second electrode 12 that has been covered by the barrier layer 30 is covered by a gap between the mold 20 and the lead structure 10. The pedestal 50 is located below the lead structure 10, and the reflective cup 40 is formed in the second cavity 228.

Sixth Step: As shown in FIGS. 7 to 8, the mold 20 is removed. The pedestal 50 fills the substrate cavity 212, the top surface of the middle portion is flush with the upper surface of the lead structure 10, and the edge of the lower surface 42 of the reflective cup 40 abuts the barrier layer 30.

Seventh step: As shown in FIG. 9, the barrier layer 30 is removed by etching, washing, or the like, and the surfaces of the first electrode 11 and the second electrode 12 on the side close to each other are exposed. Due to the covering action of the barrier layer 30, the fluid plastic material does not spread to the surfaces of the first electrode 11 and the second electrode 12 on the side close to each other, so the first electrode 11 and the first layer after the barrier layer 30 are removed The surface of the two electrodes 12 is smooth and free of burrs, and since the barrier layer 30 and the reflective cup 40 are of two different materials, the structure of the reflective cup 40 is not damaged during etching. The reflector cup 40 and the lead structure 10 are surrounded by a recess 43 .

Eighth Step: As shown in FIG. 10, a light-emitting element 60 is disposed on a surface of the first electrode 11 on the side close to the second electrode 12. The light emitting element 60 is received in the recess 43. The light-emitting element 60 is electrically connected to the first electrode 11 and electrically connected to the second electrode 12 by a wire 61, that is, two electrodes of the light-emitting element 60 and the first electrode 11 and the second electrode 12, respectively. Form an electrical connection. In the embodiment, the light-emitting element 60 is a light-emitting diode die. In this step, other methods may be employed, such as fixing the light-emitting element 60 in a flip-chip form on the lead structure, and by using the conductive solid glue and the first electrode 11, the second The electrodes 12 form an electrical connection.

Ninth Step: As shown in FIG. 11, an encapsulation layer 70 is formed on the light-emitting element 60. The encapsulation layer 70 is filled in the recess 43 and is flush with the upper surface 41 of the reflector cup 40. The encapsulation layer 70 may be a transparent colloid doped with a phosphor 71, which may be a garnet-based phosphor, a citrate-based phosphor, a protonate-based phosphor, a sulfide-based phosphor, or a thio One or more of a gallate-based phosphor, an oxynitride-based phosphor, and a nitride-based phosphor.

In the manufacturing method of the above-mentioned light emitting diode 100, a barrier layer 30 is formed on the lead structure 10 before the injection molding of the reflective cup 40 and the susceptor 50, and the barrier layer 30 covers a part of the surface of the lead structure 10, so that The portion of the mold 20 other than the cavity is in close contact with the lead structure 10 to prevent the injected fluid material from penetrating into the gap to cover the surface of the lead structure 10 to form a burr. In addition, the barrier layer 30 is different from the material of the reflective cup 40, so that when the barrier layer 30 is removed after the injection molding is completed, the barrier layer 30 may be etched by using an etching solution that does not react with the reflective cup 40, and the barrier layer 30 may be removed. In order to form the smooth and burr-free reflective cup 40, it is also possible to prevent the etching liquid from etching the reflective cup 40 structure and affecting the optical effect of the light-emitting diode 100, thereby effectively improving the yield of the product during the packaging process.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100. . . Light-emitting diode

10. . . Pin structure

11. . . First electrode

12. . . Second electrode

20. . . Mold

twenty one. . . Counter

twenty two. . . Top die

211. . . Groove

212. . . Substrate cavity

221. . . First module

223. . . Second module

2211. . . top

2212. . . Bottom end

224. . . Sprue

225. . . First cavity

30. . . Barrier layer

226. . . Third module

227. . . Fourth module

228. . . Second cavity

40. . . Reflective cup

50. . . Pedestal

41. . . Upper surface

42. . . lower surface

43. . . Depression

60. . . Light-emitting element

61. . . wire

70. . . Encapsulation layer

71. . . Phosphor

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the first step of a method for producing a light-emitting diode of the present invention.

2 is a schematic view showing the second step of the method for producing the light-emitting diode of the present invention.

3 is a schematic view showing the third step of the method for producing the light-emitting diode of the present invention.

4-5 are schematic views showing the fourth step of the method for producing the light-emitting diode of the present invention.

Fig. 6 is a view showing the fifth step of the method for producing the light-emitting diode of the present invention.

Fig. 7 is a view showing the sixth step of the method for producing the light-emitting diode of the present invention.

Figure 8 is a plan view of the light-emitting diode semi-finished product produced by the sixth step shown in Figure 7.

Fig. 9 is a view showing the seventh step of the method for producing a light-emitting diode of the present invention.

Fig. 10 is a view showing the eighth step of the method for producing a light-emitting diode of the present invention.

Figure 11 is a schematic view showing the ninth step of the method for producing a light-emitting diode of the present invention.

100. . . Light-emitting diode

11. . . First electrode

12. . . Second electrode

40. . . Reflective cup

50. . . Pedestal

60. . . Light-emitting element

70. . . Encapsulation layer

71. . . Phosphor

Claims (10)

A method of manufacturing a light emitting diode, comprising the steps of:
Providing a pin structure comprising an isolated plate-shaped first electrode and a second electrode, the pin structure having a top surface and a bottom surface opposite to the top surface;
Providing a first mold, the first mold abuts the top surface of the lead structure, and together with the top surface of the lead structure, a first cavity;
Injecting a first material into the first cavity to form a barrier layer, the barrier layer being annular and spanning on the first electrode and the second electrode;
Providing a second mold, the second mold and the bottom surface of the lead structure together define a substrate cavity, and the second mold, the top surface of the lead structure and the barrier layer are adjacent to the outer surface of the top surface of the lead structure Forming a ring-shaped second cavity;
Injecting a second material into the substrate cavity and the second cavity to form a pedestal and a reflective cup;
Removing the mold;
Etching removing the barrier layer to expose a portion of the upper surface of the pin structure covered by the barrier layer;
A light emitting element is disposed on the lead structure and electrically connected to the first electrode and the second electrode; and an encapsulation layer is formed on the light emitting element. The method of manufacturing a light-emitting diode according to claim 1, wherein the mold comprises a bottom mold, the bottom mold includes a groove, and the groove abuts the lower surface of the lead structure to The substrate cavity is formed. The method of manufacturing the light-emitting diode according to the first aspect of the invention, wherein the mold comprises a top mold, the top mold comprising a first mold member, and a second mold member located outside the first mold member The first module, the second module, and the upper surface of the lead structure collectively surround the first cavity. The method for manufacturing a light-emitting diode according to claim 3, wherein the first module is T-shaped, and the first module comprises a top end and a middle portion extending from the middle portion of the top end toward the pin structure. The bottom end has a width greater than a width of the bottom end, and a bottom end of the first module covers both ends of the first electrode and the second electrode adjacent to each other. The method for manufacturing a light-emitting diode according to claim 4, wherein the second module is attached to an outer side surface of the top end of the first module, and has a height equal to a height of the first module. . The manufacturing method of the light-emitting diode according to the third aspect of the invention, wherein the top mold further comprises a third module and a fourth module, wherein the third module and the fourth module replace the second module And the third module and the fourth module cooperate with an upper surface of the pin structure not covered by the barrier layer to form a second cavity. The method of manufacturing the light-emitting diode according to the sixth aspect of the invention, wherein the third module surrounds the top end of the first module and the barrier layer and is attached to the top end of the first module and the barrier layer, the fourth The module is annularly disposed at a periphery of the third module and spaced apart from the third module. The method for manufacturing a light-emitting diode according to claim 1, wherein the reflective cup is formed on the second cavity, the reflective cup includes an upper surface and a lower surface, and the lower surface of the reflective cup is attached. The upper surface of the lead structure not covered by the barrier layer, and the width of the upper surface of the reflective cup is smaller than the width of the lower surface of the reflective cup. The method of manufacturing a light-emitting diode according to the eighth aspect of the invention, wherein the barrier layer is formed in the first cavity, and an end point of a lower surface of the reflector cup adjacent to each other abuts the barrier layer. The method for manufacturing a light-emitting diode according to the eighth aspect of the invention, wherein, before electrically connecting the plurality of light-emitting diodes, forming electricity in a trench between the plurality of light-emitting diodes Insulation.