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TWI479699B - Method for manufacturing led package - Google Patents

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TWI479699B
TWI479699B TW100114957A TW100114957A TWI479699B TW I479699 B TWI479699 B TW I479699B TW 100114957 A TW100114957 A TW 100114957A TW 100114957 A TW100114957 A TW 100114957A TW I479699 B TWI479699 B TW I479699B
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emitting diode
package
layer
electrode
substrate
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TW100114957A
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Chinese (zh)
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TW201244178A (en
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Shih Yuan Hsu
Hou Te Lin
Ming Ta Tsai
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Advanced Optoelectronic Tech
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Description

發光二極體封裝結構之製造方法 Method for manufacturing light emitting diode package structure

本發明涉及一種發光二極體封裝結構及其製造方法。 The invention relates to a light emitting diode package structure and a method of manufacturing the same.

先前之發光二極體封裝制程通常是將發光二極體晶片設置在基座上之後,利用注射等方式將液態封裝材料注入反射杯中,填充滿整個反射杯並覆蓋發光二極體晶片,接著加熱固化液態之封裝材料以形成封裝層。然而,由於反射杯空間過大,容易使填充於其內之封裝材料內之螢光粉使用過多,但反射杯內能被激發之螢光粉卻有限,從而會造成螢光粉浪費,導致成本提高,另外,過多之螢光粉還會遮蔽發光二極體晶片,導致發光效率低。 In the prior light-emitting diode packaging process, after the light-emitting diode chip is disposed on the pedestal, the liquid packaging material is injected into the reflective cup by injection or the like, filling the entire reflective cup and covering the light-emitting diode wafer, and then The liquid encapsulating material is cured by heating to form an encapsulation layer. However, since the reflective cup space is too large, it is easy to use too much fluorescent powder in the encapsulating material filled therein, but the fluorescent powder that can be excited in the reflective cup is limited, which causes waste of the fluorescent powder, resulting in an increase in cost. In addition, too much phosphor powder will block the LED chip, resulting in low luminous efficiency.

有鑒於此,有必要提供一種能節省螢光粉使用之發光二極體封裝結構及其製造方法。 In view of the above, it is necessary to provide a light emitting diode package structure and a method of manufacturing the same that can save the use of phosphor powder.

一種發光二極體封裝結構,其包括一封裝基座,所述封裝基座上形成一容置杯,該容置杯底部分別暴露有第一電極及第二電極。所述發光二極體封裝結構還包括一設置在容置杯中之封裝體模組以及填充在容置杯中並覆蓋該封裝體模組之透明封裝層。所述封裝體模組包括基板、設置在基板上之發光二極體晶片及包覆發光二極體晶片之螢光粉層。該基板具有第一導電層及第二導電層,該發光二極體晶片與第一導電層和第二導電層電性連接,所述第 一導電層和第二導電層分別與封裝基座上之第一電極及第二電極電性連接。 A light-emitting diode package structure includes a package base, and a receiving cup is formed on the package base, and the first electrode and the second electrode are respectively exposed on the bottom of the receiving cup. The LED package structure further includes a package module disposed in the receiving cup and a transparent encapsulation layer filled in the receiving cup and covering the package module. The package module includes a substrate, a light emitting diode chip disposed on the substrate, and a phosphor powder layer covering the light emitting diode chip. The substrate has a first conductive layer and a second conductive layer, and the light emitting diode chip is electrically connected to the first conductive layer and the second conductive layer, A conductive layer and a second conductive layer are electrically connected to the first electrode and the second electrode on the package base, respectively.

一種發光二極體封裝結構之製造方法,其包括以下幾個步驟:步驟1,提供一基板,該基板具有多個導電層;步驟2,將多個發光二極體晶片設置在基板上,該多個發光二極體晶片分別與基板上之多個導電層電性連接;步驟3,利用螢光粉層包覆多個發光二極體晶片;步驟4,切割基板,形成多個封裝體模組,每個封裝體模組包括一發光二極體晶片及與發光二極體晶片電性連接之兩個導電層;步驟5,提供一封裝基座,該封裝基座上形成一容置杯,該容置杯底部分別暴露有第一電極及第二電極,將切割後之封裝體模組設置在容置杯中,並且其兩個導電層分別與第一電極及第二電極電性連接;步驟6,在封裝基座之容置杯中填充透明封裝層,形成一發光二極體封裝結構。 A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a substrate having a plurality of conductive layers; and step 2, disposing a plurality of light emitting diode chips on the substrate, The plurality of light emitting diode chips are respectively electrically connected to the plurality of conductive layers on the substrate; in step 3, the plurality of light emitting diode chips are coated with the phosphor powder layer; and in step 4, the substrate is cut to form a plurality of package body molds. The package module includes a light-emitting diode chip and two conductive layers electrically connected to the light-emitting diode chip. In step 5, a package base is provided, and a receiving cup is formed on the package base. The bottom of the receiving cup is respectively exposed with a first electrode and a second electrode, and the packaged module is disposed in the receiving cup, and the two conductive layers are electrically connected to the first electrode and the second electrode, respectively. Step 6, filling the transparent encapsulation layer in the receiving cup of the package base to form a light emitting diode package structure.

上述之發光二極體封裝結構以及製造方法先獨立製造一封裝體模組,然後將具有有發光二極體晶片及螢光粉層之封裝體模組再設置在封裝基座之容置杯中,相對於傳統之在容置杯中設置發光二極體晶片後在整個容置杯中填滿螢光材料之封裝方法,能夠節省螢光粉使用。 In the above-mentioned LED package structure and manufacturing method, a package module is separately manufactured, and then a package module having a light-emitting diode chip and a phosphor layer is disposed in a receiving cup of the package base. Compared with the conventional packaging method in which the fluorescent material is filled in the accommodating cup after the illuminating diode is disposed in the accommodating cup, the use of the luminescent powder can be saved.

10、20‧‧‧發光二極體封裝結構 10, 20‧‧‧Lighting diode package structure

100‧‧‧封裝基座 100‧‧‧Package base

110‧‧‧頂面 110‧‧‧ top surface

120‧‧‧底面 120‧‧‧ bottom

130‧‧‧容置杯 130‧‧‧容杯

140‧‧‧第一電極 140‧‧‧First electrode

150‧‧‧第二電極 150‧‧‧second electrode

200、400‧‧‧封裝體模組 200, 400‧‧‧ package module

210、410‧‧‧基板 210, 410‧‧‧ substrate

211、412‧‧‧第一導電層 211, 412‧‧‧ first conductive layer

212、411‧‧‧絕緣層 212,411‧‧‧Insulation

213、413‧‧‧第二導電層 213, 413‧‧‧ second conductive layer

220‧‧‧發光二極體晶片 220‧‧‧Light Diode Wafer

230‧‧‧螢光粉層 230‧‧‧Fluorescent powder layer

300‧‧‧透明封裝層 300‧‧‧Transparent encapsulation layer

420‧‧‧金屬導線 420‧‧‧Metal wire

圖1為本發明第一實施方式中之發光二極體封裝結構示意圖。 FIG. 1 is a schematic diagram of a package structure of a light emitting diode according to a first embodiment of the present invention.

圖2為本發明第一實施方式中之發光二極體封裝結構之製造方法流程圖。 2 is a flow chart showing a method of manufacturing a light emitting diode package structure according to a first embodiment of the present invention.

圖3為本發明第二實施方式中之發光二極體封裝結構示意圖。 FIG. 3 is a schematic diagram of a package structure of a light emitting diode according to a second embodiment of the present invention.

圖4為本發明第二實施方式中之發光二極體封裝結構之製造方法流程圖。 4 is a flow chart showing a method of manufacturing a light emitting diode package structure according to a second embodiment of the present invention.

以下將結合附圖對本發明作進一步之詳細說明。 The invention will be further described in detail below with reference to the accompanying drawings.

實施方式一 Embodiment 1

請參閱圖1,本發明第一實施方式提供之一種發光二極體封裝結構10包括封裝基座100、設置在封裝基座100上之封裝體模組200以及包覆該封裝體模組200之透明封裝層300。 Referring to FIG. 1 , a light emitting diode package structure 10 according to a first embodiment of the present invention includes a package base 100 , a package module 200 disposed on the package base 100 , and a package module 200 . Transparent encapsulation layer 300.

所述封裝基座100包括頂面110以及底面120,從頂面110沿底面120方向開設形成一容置杯130。該容置杯130用於提供封裝體模組200及透明封裝層300之容置空間並設定發光二極體封裝結構10之光場,容置杯130之內表面為傾斜面,該傾斜面自頂面110向底面120方向延伸並沿徑向向內傾斜,使整個容置杯130上寬下窄,呈一漏斗狀。優選地,容置杯130之內表面還塗敷有反光材料。所述封裝基座100內還設置有相互間隔之第一電極140以及第二電極150,該第一電極140以及第二電極150之一端分別暴露在容置杯130之底部,用於與封裝體模組200連接,另一端分別延伸到封裝基座100兩側外,用於與外部電路連接。 The package base 100 includes a top surface 110 and a bottom surface 120. A receiving cup 130 is formed from the top surface 110 along the bottom surface 120. The accommodating cup 130 is configured to provide a accommodating space of the package module 200 and the transparent encapsulating layer 300 and set a light field of the illuminating diode package structure 10. The inner surface of the accommodating cup 130 is an inclined surface. The top surface 110 extends toward the bottom surface 120 and is inclined inward in the radial direction, so that the entire receiving cup 130 is wide and narrow, and has a funnel shape. Preferably, the inner surface of the receiving cup 130 is also coated with a reflective material. The package base 100 is further provided with a first electrode 140 and a second electrode 150 spaced apart from each other. One end of the first electrode 140 and the second electrode 150 are respectively exposed at the bottom of the receiving cup 130 for the package body. The modules 200 are connected, and the other ends extend to both sides of the package base 100 for connection with external circuits.

所述封裝體模組200包括基板210、設置在基板210上之發光二極體晶片220以及包覆該發光二極體晶片220之螢光粉層230。所述 基板210由第一導電層211、絕緣層212以及第二導電層213構成。該第一導電層211和第二導電層213從基板210之頂面延伸到基板210之底面。該絕緣層212連接第一導電層211和第二導電層213。在本實施方式中,絕緣層312可為高分子材料、陶瓷或塑膠材料構成,第一導電層211和第二導電層213為金屬材料製成。發光二極體晶片220覆晶設置在基板210上,與第一導電層211和第二導電層213電性連接。螢光粉層230覆蓋基板210之表面以及發光二極體晶片220,其厚度略微大於發光二極體晶片220之厚度。螢光粉層230是由參雜有螢光粉之封膠樹脂製成,該螢光粉可選自釔鋁石榴石、鋱釔鋁石榴石及矽酸鹽中之一種或幾種之組合。 The package module 200 includes a substrate 210, a light emitting diode chip 220 disposed on the substrate 210, and a phosphor layer 230 covering the LED chip 220. Said The substrate 210 is composed of a first conductive layer 211, an insulating layer 212, and a second conductive layer 213. The first conductive layer 211 and the second conductive layer 213 extend from a top surface of the substrate 210 to a bottom surface of the substrate 210. The insulating layer 212 connects the first conductive layer 211 and the second conductive layer 213. In the embodiment, the insulating layer 312 may be made of a polymer material, a ceramic material or a plastic material, and the first conductive layer 211 and the second conductive layer 213 are made of a metal material. The LED wafer 220 is flip-chip mounted on the substrate 210 and electrically connected to the first conductive layer 211 and the second conductive layer 213. The phosphor layer 230 covers the surface of the substrate 210 and the LED array 220, the thickness of which is slightly larger than the thickness of the LED wafer 220. The phosphor layer 230 is made of a sealant resin mixed with a phosphor powder, and the phosphor powder may be selected from one or a combination of yttrium aluminum garnet, yttrium aluminum garnet and silicate.

所述封裝體模組200設置在封裝基座100之容置杯130中,並且其上第一導電層211和第二導電層213利用焊接或者共晶方式分別與封裝基座100上之第一電極140以及第二電極150電性連接。當封裝體模組200設置在封裝基座100之容置杯130中時,由於封裝體模組200之尺寸相對容置杯130來說較小,所述螢光粉層230之側壁與容置杯130之內表面相隔開一定之距離,螢光粉層230只包覆在容置杯130之底部之發光二極體晶片220之附近區域。 The package module 200 is disposed in the receiving cup 130 of the package base 100, and the first conductive layer 211 and the second conductive layer 213 are respectively soldered or eutectic with the first on the package base 100. The electrode 140 and the second electrode 150 are electrically connected. When the package module 200 is disposed in the receiving cup 130 of the package base 100, since the size of the package module 200 is smaller than that of the receiving cup 130, the sidewall and the surface of the phosphor layer 230 are accommodated. The inner surface of the cup 130 is spaced apart by a certain distance, and the phosphor layer 230 is only coated in the vicinity of the light-emitting diode wafer 220 at the bottom of the receiving cup 130.

所述透明封裝層300為一封膠樹脂,其填充在封裝基座100之容置杯130中並包覆封裝體模組200,用於保護封裝體模組200免受灰塵、水氣等影響。 The transparent encapsulating layer 300 is a piece of adhesive resin filled in the receiving cup 130 of the package base 100 and covering the package module 200 for protecting the package module 200 from dust, moisture and the like. .

請參閱圖2,本發明第一實施方式提供之一種發光二極體封裝結構之製造方法,其包括以下幾個步驟: Referring to FIG. 2, a method for fabricating a light emitting diode package structure according to a first embodiment of the present invention includes the following steps:

步驟一,提供一基板210,該基板210具有多個導電層210a,該多個導電層210a之間藉由絕緣層210b連接,該多個導電層210a從基 板210之頂面延伸到基板210之底面。在本實施方式中,絕緣層210b可為高分子材料、陶瓷或塑膠材料構成,導電層210a由金屬材料製成。 In the first step, a substrate 210 is provided. The substrate 210 has a plurality of conductive layers 210a. The plurality of conductive layers 210a are connected by an insulating layer 210b. The plurality of conductive layers 210a are separated from the base. The top surface of the board 210 extends to the bottom surface of the substrate 210. In the present embodiment, the insulating layer 210b may be made of a polymer material, a ceramic or a plastic material, and the conductive layer 210a is made of a metal material.

步驟二,將多個發光二極體晶片220分別覆晶設置在基板210上,該多個發光二極體晶片220分別與基板210上之多個導電層210a電性連接。 In step 2, the plurality of LED chips 220 are respectively flip-chip mounted on the substrate 210. The plurality of LED chips 220 are electrically connected to the plurality of conductive layers 210a on the substrate 210.

步驟三,將一螢光粉層230覆蓋基板210整個表面以及多個發光二極體晶片220。螢光粉層230是由參雜有螢光粉之封膠樹脂製成,所述螢光粉可選自釔鋁石榴石、鋱釔鋁石榴石及矽酸鹽中之一種或幾種之組合。 In step three, a phosphor layer 230 covers the entire surface of the substrate 210 and the plurality of LED chips 220. The phosphor powder layer 230 is made of a sealant resin mixed with a phosphor powder, and the phosphor powder may be selected from one or a combination of yttrium aluminum garnet, yttrium aluminum garnet and bismuth citrate. .

步驟四,切割基板210,分別形成多個封裝體模組200,其中每個封裝體模組200包括一發光二極體晶片220、分別與該發光二極體晶片220電性連接之兩個導電層210a以及覆蓋發光二極體晶片220之螢光粉層230。 Step 4, cutting the substrate 210, and forming a plurality of package modules 200, wherein each of the package modules 200 includes a light-emitting diode chip 220, and two conductive wires respectively electrically connected to the light-emitting diode wafer 220. The layer 210a and the phosphor layer 230 covering the LED array 220.

步驟五,提供一封裝基座100,該封裝基座100上開設形成一容置杯130,封裝基座100內還設置有相互間隔之第一電極140以及第二電極150,該第一電極140以及第二電極150之一端分別暴露在容置杯130之底部,另一端分別延伸到封裝封裝基座100外,將切割後之封裝體模組200設置在容置杯130中,並且其兩個導電層210a利用焊接或者共晶方式分別與第一電極140以及第二電極150電性連接。容置杯130之內表面為傾斜面,該傾斜面自頂面向底面方向並沿徑向向內傾斜,使整個容置杯130上寬下窄,呈一漏斗狀。優選地,容置杯130之內表面還塗敷有反光材料。 In step 5, a package base 100 is provided. The package base 100 defines a receiving cup 130. The package base 100 is further provided with a first electrode 140 and a second electrode 150 spaced apart from each other. The first electrode 140 is disposed. And one end of the second electrode 150 is respectively exposed at the bottom of the accommodating cup 130, and the other end extends to the outside of the package package base 100, and the packaged package module 200 is disposed in the accommodating cup 130, and the two The conductive layer 210a is electrically connected to the first electrode 140 and the second electrode 150 by soldering or eutectic, respectively. The inner surface of the receiving cup 130 is an inclined surface which is inclined from the top surface toward the bottom surface and radially inward, so that the entire receiving cup 130 is wide and narrow, and has a funnel shape. Preferably, the inner surface of the receiving cup 130 is also coated with a reflective material.

步驟六,在封裝基座100之容置杯130中填充透明封裝層300,形成一發光二極體封裝結構10。 In step six, the transparent encapsulation layer 300 is filled in the receiving cup 130 of the package base 100 to form a light emitting diode package structure 10.

上述之發光二極體封裝結構10以及發光二極體封裝結構10之製造方法是先獨立製作封裝體模組200,將發光二極體晶片220以及螢光粉層230設置在基板210上,然後將載有發光二極體晶片220以及螢光粉層230之基板210再設置在封裝基座100之容置杯130中。當封裝體模組200設置在容置杯130中時,螢光粉層230只是包覆在容置杯130之底部之發光二極體晶片220之附近區域,其厚度略微大於發光二極體晶片220之厚度,因此,相對於傳統之在整個容置杯130中填滿螢光材料之封裝結構,能夠節省螢光粉使用。另外,藉由將多個發光二極體晶片220與一螢光粉層230結合後再分割成多個封裝體模組200之方式,避免了先前技術中需要分別在每個發光二極體封裝單獨注入螢光粉層,在制程方面更加簡化。 The manufacturing method of the LED package structure 10 and the LED package structure 10 is that the package module 200 is separately fabricated, and the LED chip 220 and the phosphor layer 230 are disposed on the substrate 210, and then The substrate 210 carrying the light-emitting diode wafer 220 and the phosphor layer 230 is further disposed in the receiving cup 130 of the package base 100. When the package module 200 is disposed in the accommodating cup 130, the phosphor layer 230 is only wrapped in the vicinity of the illuminating diode chip 220 at the bottom of the accommodating cup 130, and the thickness thereof is slightly larger than that of the illuminating diode chip. The thickness of 220, therefore, can save the use of phosphor powder compared to the conventional packaging structure in which the entire receiving cup 130 is filled with the fluorescent material. In addition, by combining the plurality of LED chips 220 with a phosphor layer 230 and then dividing into a plurality of package modules 200, the prior art needs to be separately packaged in each of the LED packages. Injecting the phosphor layer separately is more simplified in terms of process.

實施方式二 Embodiment 2

請參閱圖3,本發明第二實施方式提供之一種發光二極體封裝結構20與第一實施方式之發光二極體封裝結構10之區別在於:封裝體模組400之基板410包括一絕緣層411以及相互間隔形成在該絕緣層411上之第一導電層412和第二導電層413。發光二極體晶片220覆晶設置在基板410上,與第一導電層412和第二導電層413電性連接。螢光粉層230形成基板410之表面,包覆發光二極體晶片220,並且第一導電層412和第二導電層413分別從螢光粉層230之兩端露出。封裝體模組400之絕緣層411採用焊接或黏結等方式被固定在封裝基座100之容置杯130之底面,第一導電層412和第二 導電層413分別藉由金屬導線420與封裝基座100上之第一電極140以及第二電極150連接。 Referring to FIG. 3, a second embodiment of the present invention provides a light emitting diode package structure 20 that differs from the light emitting diode package structure 10 of the first embodiment in that the substrate 410 of the package module 400 includes an insulating layer. 411 and a first conductive layer 412 and a second conductive layer 413 formed on the insulating layer 411 at intervals. The LED wafer 220 is flip-chip mounted on the substrate 410 and electrically connected to the first conductive layer 412 and the second conductive layer 413. The phosphor layer 230 forms a surface of the substrate 410, covers the LED array 220, and the first conductive layer 412 and the second conductive layer 413 are exposed from both ends of the phosphor layer 230, respectively. The insulating layer 411 of the package module 400 is fixed on the bottom surface of the receiving cup 130 of the package base 100 by soldering or bonding, and the first conductive layer 412 and the second layer The conductive layer 413 is connected to the first electrode 140 and the second electrode 150 on the package base 100 by metal wires 420, respectively.

請參閱圖4,本發明第二實施方式提供之一種發光二極體封裝結構之製造方法,其包括以下幾個步驟: Referring to FIG. 4, a second embodiment of the present invention provides a method for manufacturing a light emitting diode package structure, which includes the following steps:

步驟一,提供一基板410,該基板410包括一絕緣層410a以及形成在該絕緣層410a上之多個相互間隔之導電層410b。 In step 1, a substrate 410 is provided. The substrate 410 includes an insulating layer 410a and a plurality of mutually spaced conductive layers 410b formed on the insulating layer 410a.

步驟二,將多個發光二極體晶片220分別覆晶設置在基板410上,該多個發光二極體晶片220分別與基板410上之多個導電層410a電性連接。 In the second step, the plurality of LED chips 220 are respectively flipped on the substrate 410. The plurality of LED chips 220 are electrically connected to the plurality of conductive layers 410a on the substrate 410.

步驟三,利用螢光粉層230覆蓋每個發光二極體晶片220,螢光粉層230之間相互間隔,使導電層410a之一端露出。螢光粉層230是由參雜有螢光粉之封膠樹脂製成,所述螢光粉可選自釔鋁石榴石、鋱釔鋁石榴石及矽酸鹽中之一種或幾種之組合。 In step three, each of the light-emitting diode chips 220 is covered by the phosphor powder layer 230, and the phosphor powder layers 230 are spaced apart from each other to expose one end of the conductive layer 410a. The phosphor powder layer 230 is made of a sealant resin mixed with a phosphor powder, and the phosphor powder may be selected from one or a combination of yttrium aluminum garnet, yttrium aluminum garnet and bismuth citrate. .

步驟四,切割基板410,形成多個封裝體模組400,每個封裝體模組400包括一發光二極體晶片220、與發光二極體晶片220電性連接之兩個導電層410b以及覆蓋發光二極體晶片220之螢光粉層230。 Step 4: cutting the substrate 410 to form a plurality of package modules 400. Each package module 400 includes a light emitting diode chip 220, two conductive layers 410b electrically connected to the LED substrate 220, and a cover. The phosphor layer 230 of the LED wafer 220.

步驟五,提供一封裝基座100,該封裝基座100上開設形成一容置杯130,封裝基座100內還設置有相互間隔之第一電極140以及第二電極150,該第一電極140以及第二電極150之一端分別暴露在容置杯130之底部,另一端分別延伸到封裝封裝基座100外,將切割後之封裝體模組400設置在容置杯130中,並且封裝體模組400之絕緣層410a採用焊接或黏結等方式被固定在容置杯130之底面 。容置杯130之內表面為傾斜面,該傾斜面自頂面向底面方向並沿徑向向內傾斜,使整個容置杯130上寬下窄,呈一漏斗狀。優選地,容置杯130之內表面還塗敷有反光材料。 In step 5, a package base 100 is provided. The package base 100 defines a receiving cup 130. The package base 100 is further provided with a first electrode 140 and a second electrode 150 spaced apart from each other. The first electrode 140 is disposed. And one end of the second electrode 150 is respectively exposed at the bottom of the accommodating cup 130, and the other end is respectively extended outside the package package base 100, and the packaged package module 400 is disposed in the accommodating cup 130, and the package body is molded. The insulating layer 410a of the group 400 is fixed on the bottom surface of the receiving cup 130 by welding or bonding. . The inner surface of the receiving cup 130 is an inclined surface which is inclined from the top surface toward the bottom surface and radially inward, so that the entire receiving cup 130 is wide and narrow, and has a funnel shape. Preferably, the inner surface of the receiving cup 130 is also coated with a reflective material.

步驟六,利用金屬導線420將兩個導電層410b分別與封裝基座100上之第一電極140以及第二電極150連接。 In step six, the two conductive layers 410b are respectively connected to the first electrode 140 and the second electrode 150 on the package base 100 by using the metal wires 420.

步驟七,在封裝基座100之容置杯130中填充透明封裝層300,形成一發光二極體封裝結構20。 Step 7: filling the transparent encapsulation layer 300 in the receiving cup 130 of the package base 100 to form a light emitting diode package structure 20.

相較於先前技術,本發明之發光二極體封裝結構以及製造方法先獨立製造一封裝體模組,然後將具有有發光二極體晶片及螢光粉層之封裝體模組再設置在封裝基座之容置杯中,相對於傳統之在容置杯中設置發光二極體晶片後在整個容置杯中填滿螢光材料之封裝方法,能夠節省螢光粉使用。 Compared with the prior art, the LED package structure and the manufacturing method of the present invention separately manufacture a package module, and then package the package module having the LED chip and the phosphor layer in the package. In the accommodating cup of the susceptor, compared with the conventional packaging method in which the luminescent cup is filled in the accommodating cup and the fluorescent material is filled in the accommodating cup, the use of the luminescent powder can be saved.

另外,本領域技術人員還可在本發明精神內做其他變化,當然,這些依據本發明精神所做之變化,都應包含在本發明所要求保護之範圍之內。 In addition, those skilled in the art can make other changes in the spirit of the present invention. Of course, the changes made in accordance with the spirit of the present invention should be included in the scope of the present invention.

10‧‧‧發光二極體封裝結構 10‧‧‧Light emitting diode package structure

100‧‧‧封裝基座 100‧‧‧Package base

110‧‧‧頂面 110‧‧‧ top surface

120‧‧‧底面 120‧‧‧ bottom

130‧‧‧容置杯 130‧‧‧容杯

140‧‧‧第一電極 140‧‧‧First electrode

150‧‧‧第二電極 150‧‧‧second electrode

200‧‧‧封裝體模組 200‧‧‧ package module

210‧‧‧基板 210‧‧‧Substrate

211‧‧‧第一導電層 211‧‧‧First conductive layer

212‧‧‧絕緣層 212‧‧‧Insulation

213‧‧‧第二導電層 213‧‧‧Second conductive layer

220‧‧‧發光二極體晶片 220‧‧‧Light Diode Wafer

230‧‧‧螢光粉層 230‧‧‧Fluorescent powder layer

300‧‧‧透明封裝層 300‧‧‧Transparent encapsulation layer

Claims (2)

一種發光二極體封裝結構之製造方法,其包括以下幾個步驟:步驟1,提供一基板,該基板具有絕緣層以及形成在絕緣層內且相互間隔的多個導電層,所述導電層僅一側表面外露在所述絕緣層的表面;步驟2,將多個發光二極體晶片設置在基板上,該多個發光二極體晶片分別與基板上之多個導電層電性連接;步驟3,利用螢光粉層包覆多個發光二極體晶片,部分所述導電層暴露在所述螢光粉層外;步驟4,切割基板,形成多個封裝體模組,每個封裝體模組包括一發光二極體晶片及與發光二極體晶片電性連接之兩個導電層;步驟5,提供一封裝基座,該封裝基座上形成一容置杯,該容置杯底部分別暴露有第一電極及第二電極,將切割後之封裝體模組設置在容置杯中,並且兩個導電層外露在螢光粉層外的部分分別與第一電極及第二電極電性連接;步驟6,在封裝基座之容置杯中填充透明封裝層,形成一發光二極體封裝結構。 A manufacturing method of a light emitting diode package structure, comprising the following steps: Step 1: providing a substrate having an insulating layer and a plurality of conductive layers formed in the insulating layer and spaced apart from each other, the conductive layer only a side surface is exposed on the surface of the insulating layer; in step 2, a plurality of light emitting diode wafers are disposed on the substrate, and the plurality of light emitting diode wafers are electrically connected to the plurality of conductive layers on the substrate respectively; 3. The plurality of light emitting diode chips are coated with the phosphor powder layer, and the conductive layer is exposed outside the phosphor powder layer; in step 4, the substrate is cut to form a plurality of package modules, each package body The module comprises a light-emitting diode chip and two conductive layers electrically connected to the light-emitting diode chip; in step 5, a package base is provided, and a receiving cup is formed on the package base, and the bottom of the receiving cup is formed The first electrode and the second electrode are respectively exposed, and the packaged module is disposed in the receiving cup, and the portions of the two conductive layers exposed outside the phosphor layer are electrically connected to the first electrode and the second electrode, respectively. Sexual connection; step 6, in the seal Receiving the base of the cup filled with a transparent encapsulation layer, forming a light-emitting diode package structure. 如申請專利範圍第1項所述之發光二極體封裝結構之製造方法,其中:切割後之封裝體模組之絕緣層採用焊接或黏結方式被固定在容置杯之底面,導電層藉由金屬導線與封裝基座上之第一電極及第二電極連接。 The method for manufacturing a light emitting diode package structure according to claim 1, wherein the insulating layer of the packaged module is fixed on the bottom surface of the receiving cup by soldering or bonding, and the conductive layer is used. The metal wire is connected to the first electrode and the second electrode on the package base.
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