1333401 九、發明說明： 【發明所屬之技術領域】 本發明係關於在感光性玻璃基板上形成多個一樣且 微直徑之貫穿孔的感光性玻璃基板之貫穿孔形成方法 【先前技術】 作為形成雙面佈線基板之貫穿孔的方法，例如分別 有在專利文獻1中之使用鑽床施行機械式切削的方法 專利文獻2中之使用雷射光施行熔融揮發的方法，以 專利文獻3與專利文獻4中之以微影步驟為主體的方 其中，專利文獻3所揭示的方法係使用玻璃作為雙面 基板的基體材料，且貫穿孔之形成係在該玻璃基板上 光阻劑，並利用使用光罩的一次曝光法，形成由所需 穿孔排列圖案所構成的光阻圖案之後，再利用濕式蝕 形成貫穿孔的方法。 另一方面，專利文獻4所揭示之方法雖在使用光罩 一次曝光、及利用濕式蝕刻形成貫穿孔之方面與專利 3所揭示之方法相同，但是，就雙面佈線基板的基體— 為感光性玻璃、及未使用光阻之方面，係不同於專利 3所揭示之方法。該等貫穿孔形成方法中，以微影步ί 主體的貫穿孔形成方法係一次進行，可同時形成數千 萬個貫穿孔，在此方面可謂量產性優越。 此外，在將感光性玻璃使用作為雙面佈線基板的基 料之情況，因為並不需要使用光阻，就此點而言亦可 優勢。 312ΧΡ/發明說明書(補件)/94-01/93129975 細 〇 揭不 ，在 及在 法。 佈線 塗佈 之貫 刻法 施行 文獻 才料 文獻 聚為 至數 體材 謂具 5 1333401 專利文獻1 :日本專利特開平1 0 - 3 3 5 8 3 7號公報 專利文獻2 :日本專利第2 8 7 9 7 2 3號公報 專利文獻3 :日本專利特開平6 - 2 7 5 9 5 4號公報 專利文獻4 :日本專利特開2 Ο (Π - 4 4 6 3 9號公報 【發明内容】 (發明所欲解決之問題） 在將感光性玻璃使用作為雙面佈線基板之基體材料的 情況，如上所述，雖利用使用光罩的微影步驟為主之方法， 可一次同時形成多個貫穿孔，但是，在佈線基板高密度化 之方面而言，具有如下所說明的問題。以下，採用圖2與 圖3，說明在感光性玻璃基板上形成貫穿孔的習知方法之 概要。 圖2所示係習知感光性玻璃基板之貫穿孔形成方法中， 貫穿孔形成步驟之流程圖及各步驟之狀態的示意側剖面 圖，圊3所示係貫穿孔之部分放大概要側剖面圖。圖中， 元件符號1 0 0係形成基板狀的感光性玻璃，1 0 1 a係潛像， 1 0 1係貫穿孔，1 0 2係光罩，1 0 2 a係光罩之遮光膜，1 0 3 係經準直之紫外光。另外，遮光膜1 0 2 a係作為對應於所需 之貫穿孔的形狀與其排列的圖案，形成於光罩102上。 首先，如圊2(a)所示，將光罩配置於感光性玻璃100 上，並照射經準直的紫外光1 0 3。藉由此紫外光之照射， 在感光性玻璃基板1 0 0内使曝光結晶化部形成為潛像 101a。潛像101a的圖案係如圖2(a)所示，對應於光罩遮 光膜102a圖案的負型圖案。對已形成潛像101a的感光性 6 312XP/發明說明書(補件)/94-01 /93129975 1333401 玻璃基板1 0 0施行加熱熱處理之後，再對已形成潛像 域利用氟化氫系溶液施行蝕刻去除，獲得圖2 ( b )所示 需之貫穿孔圖案。 但是，所獲得之貫穿孔的截面形狀形成如圖3之示 所示的鼓型形狀，中央部的貫穿孔徑最小，表背面的 孔徑最大。例如，在感光性玻璃基板1 0 0之厚度為0 . 的情況，且基板中央部的貫穿孔徑為6 0 // m之情況， 性玻璃基板1 0 0之表背面的貫穿孔徑成為1 2 0 ~ 1 5 0 // 穿孔的截面形狀之所以如此形成鼓型形狀的理由，如 述。 一般而言，蝕刻係從基板表面開始進行。又，未形 像之部分的蝕刻速度係小於已形成潛像區域的速度， 並非完全為零，仍會被蝕刻液所侵蝕。未形成潛像之 的蝕刻速度係潛像形成部的約1 / 5 0左右。由此現象， 像形成區域的蝕刻之進行，感光性玻璃之表面的平面 亦一起進行，結果便如圖3所示，貫穿孔形狀形成鼓 狀。但是，雙面佈線基板的佈線密度並非由中央部的 孔徑所決定，而是由露出於基板表背面的貫穿孔徑所 定。所以，此狀況對以感光性玻璃基板作為基體材料 面佈線基板之高密度化，將形成頗大的阻礙。本發明 上述背景的基礎下而完成的，其目的在於提供可在感 玻璃基板上形成多個一樣且細微直徑之貫穿孔的感光 璃基板之貫穿孔形成方法。 (解決問題之手段） 312ΧΡ/發明說明書(補件)/94-01 /93129975 的區 的所 意圖 貫穿 8 5mm 感光 η。貫 下所 成潛 但是 部分 隨潛 触刻 型形 貫穿 決 的雙 乃在 光性 性玻 7 1333401 作為用以解決上述課題之手段，第1手段的感光性玻璃 基板之貫穿孔形成方法，係在形成連通感光性玻璃基板表 背面之貫穿孔的感光性玻璃基板之貫穿孔形成方法中，其 特徵為包含有： 在上述感光性玻璃基板形成貫穿孔的部分，藉由照射光 而形成潛像的潛像形成步驟； 藉由對上述潛像形成步驟中已形成潛像的部分施行熱 處理，使之結晶化的結晶化步驟； 將在上述結晶化步驟中結晶化的部分蝕刻去除而形成 貫穿孔的蝕刻步驟；以及 具有將在上述蝕刻步驟中已形成貫穿孔的感光性玻璃 基板之表背面的至少一面上至少已形成貫穿孔的區域，朝 厚度方向去除既定量，以使上述貫穿孔孔徑之長度方向的 均勻性在容許範圍内的去除加工處理之孔徑均勻化步驟。 第2手段係在第1手段的感光性玻璃基板之貫穿孔形成 方法中，上述孔徑均勻化步驟的去除加工處理係使用機械 研削法或物理式蝕刻法、或合併使用該等方法者。 第3手段係在第1或第2手段的感光性玻璃基板之貫穿 孔形成方法中，上述孔徑均勻化步驟係包含有：在上述去 除加工處理前在由上述蝕刻步驟所形成的貫穿孔中，填充 有機物及/或金屬的步驟，或者使有機物及/或金屬附著於 貫穿孔側壁部的步驟。 第4手段係在第3手段的感光性玻璃基板之貫穿孔形成 方法中，在上述孔徑均勻化步驟中，在施行上述去除加工 8 312XP/發明說明書(補件)/94-01 /93129975 1333401 處理後，將上述貫穿孔中所填充的有機物及/或金屬 '或者 附著於上述貫穿孔側壁部的有機物及/或金屬予以去除。 (發明效果） 簡要而言，上述手段係著眼於感光性玻璃之表背面附近 的孔徑雖變大，但是孔在厚度方向之内部區域呈現相對一 致的孔徑的事實，遂以是否能僅利用孔徑一樣之部分的思 想為基礎。為實現此想法，將形成貫穿孔之前的感光性玻 璃基板厚度設定為厚於所需値的厚度，在形成貫穿孔之 後，利用機械研削法等施行薄壁化，形成所需之基板厚度， 結果便形成具有一樣孔徑的貫穿孔。依此，可利用以微影 步驟為主體的方法，在感光性玻璃基板上一次地同時形成 多個具有一樣且細微孔徑的貫穿孔，進而可達雙面佈線基 板的高密度化。 【實施方式】 圖1所示係用以說明本發明之感光性玻璃基板之貫穿孔 形成方法的步驟流程圖、及各步驟的感光性玻璃基板之概 略側剖面圖，圖1 ( a )所示係曝光步驟的示意圖，圖1 ( b ) 所示係蝕刻後的貫穿孔形狀圖，圖1 ( c )所示係從基板之表 背面起深入一定量深度處而將基板去除的去除加工後之該 形狀圖。以下，參照圖1，針對本發明實施形態的感光性 玻璃之貫穿孔形成方法進行說明。圖1中，元件符號1係 基板狀之感光性玻璃，2係潛像，3係光罩，3a係光罩的 遮光膜圖案，4係紫外光，5係貫穿扎，AA’與BB’線係感 光性玻璃基板的移除線。以下，針對圖1所示貫穿孔形成 9 312XP/發明說明書(補件)/94-0丨/93129975 1333401 步驟進行説明。 此貫穿孔形成步驟係包含有：藉由對感光性玻璃基板形 成貫穿孔的部分照射光而形成潛像的潛像形成步驟；對以 潛像形成步驟形成潛像的部分施行熱處理，藉以使之結晶 化的結晶化步驟；將以結晶化步驟而結晶化的部分蝕刻去 除而形成貫穿孔的蝕刻步驟；以及將以蝕刻步驟形成有貫 穿孔的感光性玻璃基板之表背面之至少一面上至少已形成 貫穿孔的區域，朝厚度方向去除既定量，藉以使上述貫穿 孔孔徑之長度方向之均勻性在容許範圍内的具有去除加工 處理之孔徑均勻化步驟。以下，具體說明各步驟的處理。 (潛像形成步驟） <曝光> 如圖1(a)所示，在基板狀之感光性玻璃1之表面配置光 罩3，選擇性地僅對感光性玻璃1上的貫穿孔5形成部分 照射紫外線，形成潛像2。在此所使用的感光性玻璃1之 材料只要含有感光性成分，且顯示感光性者的話便可，並 無特別限制。此感光性成分最好含有Au、Ag、Cu2〇或Ce〇2 中至少1種，尤以含有該等中之2種以上為佳。 在本發明中，玻璃基板例如使用以重量％計，以Si〇2 : 55~85%、 Al2〇3 : 2-20%、LizO : 5-15%、Si〇2 + Al2〇3 + Li2〇> 85%為基本成分， 並以 Au : 0· 00卜 0· 05%、Ag : 0. 00 卜0. 5%、Cu2〇 : 0.00卜1% 為感光 性金屬成分，更以含有Ce〇2: 0.001〜0.2%作為光增感劑的感 光性玻璃特佳。 再者，在貫穿孔形成用的曝光中所使用之光罩，僅要在 10 312XP/發明說明書(補件)/94-01/93129975 1333401 形成貫穿孔的位置具有開口部，並密接於感光性玻璃1， 且能對感光性玻璃1選擇性施行曝光者的話便可，並無特 別限制。此種光罩可使用例如在透明薄板玻璃上形成有由 如鉻膜等實質上不使紫外線等曝光光通過之膜所構成的遮 光膜圖案3 a的光罩3 (參照圖1 )。另外，亦可不使用光罩， 應用聚光光束用的曝光方式。不論採取任何曝光方法的情 況，若可在選擇性照射紫外線的部分形成潛像2的話便可。 (結晶化步驟） <加熱熱處理> 其次，對已形成潛像2的感光性玻璃1施行熱處理。此 熱處理最好在所使用之玻璃的轉移點與降伏點間之溫度下 實施。在未滿轉移點的溫度下，無法獲得充分的熱處理效 果，另一方面，在超過降伏點的溫度下，將發生收縮，而 有降低尺寸精度之虞。熱處理時間最好設定為3 0分〜5小 時左右。 (蝕刻步驟） <蝕刻> 接著，將依此經熱處理過的感光性玻璃1浸潰於稀釋氫 氟酸中，將已形成潛像2的部分钱刻。藉由此触刻，如圖 1(b)所示，僅選擇性地從感光性玻璃1上將貫穿孔形成部 溶解去除，形成貫穿孔5。如上述，貫穿孔5的形狀將形 成鼓狀形狀。 (孔徑均勻化步驟） <去除加工> 11 312XP/發明說明書(補件)/94-01/93129975 1333401 本步驟中，將基板表背面起至圖1(b)所示AA’與 為止的部分（以下稱「移除」）予以去除。去除的方 用如機械性研削方法或離子研磨、反應性電漿蝕刻 蝕刻法，且亦可合併使用該等方法。又，在利用機 削法進行去除的情況，亦可合併使用研磨，此情況 得任意的表面粗糙度。此情況，研削研磨粒可使用 石、氧化鋁、碳化矽等所構成的研磨粒，又，研磨 使用如：氧化碎、膠體狀氧化碎、氧化鈽、氧化欽 鐵、鑽石等。不論採取任何方法，摘取均以貫穿孔 同性或均勻性成為所需容許範圍的數值之方式適當 另外，經蝕刻步驟之後，亦可對貫穿孔5使用金 機物進行填充，然後再施行去除加工。此方法對貫 細微，且利用機械性研削法施行去除加工時特別有 即，研削加工時，研磨粒進入貫穿孔内，而有無法 工後的清洗步驟（未圖示）去除該研磨粒的情況。此 貫穿孔徑的縮小而更趨嚴重。在去除加工之前，藉 將貫穿孔5填充入金屬或有機物等而阻塞，可防止 進入貫穿孔内。 在利用金屬材料填充貫穿孔的情況，在去除加工 使用適當的蝕刻液予以去除，或者亦可使用作為將 上所形成之佈線圖案（未圖示）予以導電耦接用之貫 導體。金屬材料可使用例如銅，此情況，藉由無電 電解電鍍、或合併使用該等的電鍍方法，便可填充賓 再者，於利用有機物填充貫穿孔的情況，在去除 312XP/發明說明書(補件)/94-01/93129975 BB，線 法可使 等乾式 械性研 ，可獲 如由鑽 粒亦可 、氧化 徑之相 決定。 屬或有 穿扎徑 效。亦 利用加 狀況隨 由預先 研磨粒 後，可 表背面 穿孔内 解、或 穿孔。 加工 12 1333401 後，必需去除該有機物。有機物只要為溶解於適當溶劑中 者的話便可，並無特別限制，可使用例如石蠟、微晶蠟等 蠟類，或為了賦予該等黏著性，可使用添加有如松香、聚 萜烯系樹脂、碳氫脂肪族系等石油樹脂等者。 另外，即便未將貫穿孔5利用填充物完全阻塞，在貫穿 礼5之側壁部，利用可在後續的清洗步驟等之中去除的金 屬、或有機物覆蓋的方法亦有效。此情況，進入貫穿孔5 内的研磨粒，在後續的清洗步驟等之中，於去除金屬或有 機物時，將同時從貫穿孔5中排放出。 以下，使用實施例更詳盡地說明本發明。 [實施例1 ] 本實施例中，感光性基板係使用具有下述組成的感光性 玻璃（商品名：Η Ο Y A股份有限公司製P E G 3 )。1. Technical Field of the Invention The present invention relates to a method for forming a through-hole of a photosensitive glass substrate in which a plurality of through-holes of the same diameter and micro-diameter are formed on a photosensitive glass substrate. [Prior Art] For example, in the method of performing mechanical cutting using a drill press, a method of performing melt evaporation using laser light is disclosed in Patent Document 1 and Patent Document 3, respectively. In the method of the lithography step, the method disclosed in Patent Document 3 uses glass as a base material of the double-sided substrate, and the formation of the through-holes is based on the photoresist on the glass substrate, and the use of the reticle is used once. The exposure method is a method of forming a through-hole by wet etching after forming a photoresist pattern composed of a desired pattern of perforations. On the other hand, the method disclosed in Patent Document 4 is the same as the method disclosed in Patent 3 in that a single exposure using a photomask and a through hole are formed by wet etching, but the substrate of the double-sided wiring substrate is photosensitive. The glass and the unused photoresist are different from the method disclosed in Patent 3. In the through hole forming method, the through hole forming method of the lithography step is performed once, and tens of thousands of through holes can be formed at the same time, and mass production is superior in this respect. Further, in the case where the photosensitive glass is used as a base material of the double-sided wiring substrate, since it is not necessary to use a photoresist, it is also advantageous in this point. 312ΧΡ/Inventive Manual (Repair)/94-01/93129975 Detailed 揭 , , 在 在 在 在 在 。 。 。 。 。 。 。 。 In the case of the wiring coating method, the document is published in the literature. The document is distributed to the number of the body material. 5 1333401 Patent Document 1: Japanese Patent Laid-Open Patent Publication No. Hei 10 - 3 3 5 8 3 7 Patent Document 2: Japanese Patent No. 2 8 Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. 6 - 2 7 5 9 5 4 Patent Document 4: Japanese Patent Laid-Open No. 2 (Ο - 4 4 6 3 9 [Invention] Problem to be Solved by the Invention When the photosensitive glass is used as a base material of a double-sided wiring board, as described above, a plurality of through holes can be simultaneously formed at one time by using a lithography step using a photomask. However, in order to increase the density of the wiring board, there is a problem as described below. Hereinafter, an outline of a conventional method of forming a through hole in a photosensitive glass substrate will be described with reference to FIGS. 2 and 3. In the method of forming a through hole for a photosensitive glass substrate, a schematic cross-sectional view showing a state of a through hole forming step and a state of each step, and a partial enlarged cross-sectional side view showing a through hole. , component symbol 1 0 0 is a substrate-shaped photosensitive glass, a 10 1 a-based latent image, a 1 0 1-type through-hole, a 1 0 2-type photomask, a 10 2 a-based mask, and a 10 3 system. In addition, the light-shielding film 1 0 2 a is formed on the reticle 102 as a pattern corresponding to the shape of the desired through-hole, and is first formed as shown in 圊2(a). On the photosensitive glass 100, the collimated ultraviolet light 1 0 3 is irradiated, and the exposure crystallized portion is formed into the latent image 101a in the photosensitive glass substrate 100 by the irradiation of the ultraviolet light. The latent image 101a The pattern is as shown in Fig. 2(a), corresponding to the negative pattern of the pattern of the mask light-shielding film 102a. The photosensitive 6 312XP/invention specification (supplement)/94-01 /93129975 1333401 for the latent image 101a has been formed. After the glass substrate 1000 is subjected to heat treatment, etching is performed on the formed latent image region by using a hydrogen fluoride-based solution to obtain a through-hole pattern as shown in FIG. 2(b). However, the cross-sectional shape of the obtained through-hole is formed. As shown in Fig. 3, the drum shape has the smallest penetration hole at the center and the largest diameter at the back of the watch. For example, when the thickness of the photosensitive glass substrate 100 is 0., and the through hole diameter at the center portion of the substrate is 60 // m, the through hole diameter of the front and back surfaces of the glass substrate 1000 becomes 1 2 0. ~ 1 5 0 // The reason why the cross-sectional shape of the perforation is such that the drum shape is formed as described above. Generally, the etching is performed from the surface of the substrate. Further, the etching speed of the portion of the unshaped image is smaller than that formed. The speed of the image area is not completely zero and will still be eroded by the etchant. The etching rate at which the latent image is not formed is about 1 / 50 of the latent image forming portion. As a result, the etching of the formation region proceeds, and the plane of the surface of the photosensitive glass is also performed together. As a result, as shown in Fig. 3, the through hole shape is formed into a drum shape. However, the wiring density of the double-sided wiring board is not determined by the aperture of the center portion, but by the through hole diameter exposed on the front and back surfaces of the substrate. Therefore, in this case, the density of the photosensitive wiring substrate as the base material wiring substrate is increased, which is a considerable hindrance. SUMMARY OF THE INVENTION The object of the present invention is to provide a method for forming a through-hole of a photosensitive glass substrate in which a plurality of through-holes having the same fine diameter are formed on a glass substrate. (Means for Solving the Problem) The area of the 312ΧΡ/invention specification (supplement)/94-01/93129975 is intended to run through 8 5mm η. The method of forming a through-hole of a photosensitive glass substrate according to the first means is a means for solving the above problems, and a method for forming a through-hole of a photosensitive glass substrate is disclosed in the photo-shield glass 7 1333401. In the method for forming a through-hole of a photosensitive glass substrate that is formed to penetrate the through-holes of the front and back surfaces of the photosensitive glass substrate, the method further comprises: forming a latent image by irradiating light to a portion where the through-hole is formed in the photosensitive glass substrate; a latent image forming step; a crystallization step of crystallization by heat-treating a portion where the latent image has been formed in the latent image forming step; and etching and removing the portion crystallized in the crystallization step to form a through hole And an etching step; and a region having at least one surface of the front and back surfaces of the photosensitive glass substrate on which the through holes are formed in the etching step, and removing a predetermined amount in the thickness direction so as to make the length of the through hole The uniformity of the direction is within the allowable range of the pore size homogenization step of the removal processing. In the second method, in the method of forming a through hole of a photosensitive glass substrate according to the first aspect, the removal processing of the aperture equalization step is performed by a mechanical grinding method or a physical etching method, or a combination of the methods. The third method is the method for forming a through hole of a photosensitive glass substrate according to the first or second aspect, wherein the hole uniformizing step includes: in the through hole formed by the etching step before the removing processing, a step of filling an organic substance and/or a metal, or a step of attaching an organic substance and/or a metal to a side wall portion of the through hole. The fourth means is a method for forming a through hole in a photosensitive glass substrate according to the third aspect, wherein in the hole uniformizing step, the removal processing is performed 8 312 XP / invention manual (supplement) / 94-01 /93129975 1333401 Thereafter, the organic substance and/or the metal filled in the through-hole or the organic substance and/or metal adhered to the side wall portion of the through-hole are removed. (Effect of the Invention) In summary, the above-mentioned means pays attention to the fact that the pore diameter in the vicinity of the front and back surfaces of the photosensitive glass becomes large, but the pores have a relatively uniform pore diameter in the inner region in the thickness direction, and whether or not the pore diameter can be utilized only Part of the idea is based. In order to achieve this idea, the thickness of the photosensitive glass substrate before the formation of the through hole is set to be thicker than the thickness of the desired crucible, and after the through hole is formed, thinning is performed by a mechanical grinding method or the like to form a desired substrate thickness. A through hole having the same hole diameter is formed. According to this, a plurality of through holes having the same fine pore diameter can be simultaneously formed on the photosensitive glass substrate by the method mainly using the lithography step, and the density of the double-sided wiring substrate can be increased. [Embodiment] FIG. 1 is a flow chart showing the steps of a method for forming a through-hole of a photosensitive glass substrate of the present invention, and a schematic side cross-sectional view of a photosensitive glass substrate in each step, as shown in FIG. 1(a). The schematic diagram of the exposure step, FIG. 1 (b) shows the shape of the through hole after etching, and FIG. 1 (c) shows the removal of the substrate after the depth of the substrate is deepened from the front and back of the substrate. The shape map. Hereinafter, a method of forming a through hole of a photosensitive glass according to an embodiment of the present invention will be described with reference to Fig. 1 . In Fig. 1, the component symbol 1 is a substrate-shaped photosensitive glass, a 2-series latent image, a 3-series photomask, a 3a-type mask light-shielding film pattern, a 4-series ultraviolet light, a 5-series through-line, and an AA' and BB' line. It is a removal line of a photosensitive glass substrate. Hereinafter, the steps of forming the through hole 9 312XP/invention specification (supplement)/94-0丨/93129975 1333401 shown in Fig. 1 will be described. The through hole forming step includes a latent image forming step of forming a latent image by irradiating light to a portion where the photosensitive glass substrate forms a through hole, and heat treating a portion where the latent image is formed by the latent image forming step, thereby making it a crystallization step of crystallization; an etching step of forming a through hole by etching a portion etched by the crystallization step; and at least one side of the front and back surfaces of the photosensitive glass substrate having the through hole formed by the etching step A region in which the through hole is formed, and a predetermined amount is removed in the thickness direction, so that the uniformity of the longitudinal direction of the through hole diameter is within an allowable range, and the hole diameter equalizing step is performed. Hereinafter, the processing of each step will be specifically described. (Least Image Forming Step) <Exposure> As shown in Fig. 1(a), the photomask 3 is placed on the surface of the substrate-shaped photosensitive glass 1, and selectively formed only on the through holes 5 in the photosensitive glass 1. Part of the ultraviolet light is irradiated to form a latent image 2. The material of the photosensitive glass 1 used herein is not particularly limited as long as it contains a photosensitive component and exhibits photosensitivity. It is preferable that the photosensitive component contains at least one of Au, Ag, Cu2, or Ce〇2, and it is preferable to contain two or more of these. In the present invention, the glass substrate is used, for example, in terms of % by weight, Si〇2: 55-85%, Al2〇3: 2-20%, LizO: 5-15%, Si〇2 + Al2〇3 + Li2〇 > 85% is the basic component, and is Au: 0· 00 Bu 0. 05%, Ag: 0. 00 Bu 0. 5%, Cu2 〇: 0.00 Bu 1% is a photosensitive metal component, and further contains Ce〇 2: 0.001 to 0.2% of photosensitive glass as a photosensitizer is particularly preferable. In addition, the photomask used in the exposure for forming the through-holes has an opening only at the position where the through-hole is formed in 10 312 XP/invention specification (supplement)/94-01/93129975 1333401, and is in close contact with the photosensitive property. The glass 1 can be selectively exposed to the photosensitive glass 1, and is not particularly limited. In the reticle, for example, a mask 3 (see Fig. 1) in which a light-shielding film pattern 3a made of a film such as a chrome film that does not substantially pass ultraviolet light or the like is formed on the transparent thin plate glass. In addition, it is also possible to apply an exposure method for collecting light beams without using a photomask. Regardless of the exposure method, the latent image 2 can be formed in the portion where the ultraviolet ray is selectively irradiated. (Crysturing Step) <Heating Heat Treatment> Next, the photosensitive glass 1 on which the latent image 2 has been formed is subjected to heat treatment. This heat treatment is preferably carried out at a temperature between the transfer point and the drop point of the glass used. At a temperature less than the transfer point, sufficient heat treatment effect cannot be obtained, and on the other hand, at a temperature exceeding the drop point, shrinkage occurs, and there is a fear of lowering the dimensional accuracy. The heat treatment time is preferably set to about 30 minutes to about 5 hours. (Etching Step) <Etching> Next, the heat-treated photosensitive glass 1 is immersed in diluted hydrofluoric acid, and the portion in which the latent image 2 has been formed is burned. By this, as shown in Fig. 1(b), only the through hole forming portion is selectively removed and removed from the photosensitive glass 1, and the through hole 5 is formed. As described above, the shape of the through hole 5 will be formed into a drum shape. (Aperture uniformization step) <Removal processing> 11 312XP/Invention manual (supplement)/94-01/93129975 1333401 In this step, the back surface of the substrate is raised to the AA' shown in Fig. 1(b) Part (hereinafter referred to as "removal") is removed. The removal method may be, for example, a mechanical grinding method or an ion milling, a reactive plasma etching etching method, or may be used in combination. Further, in the case of removal by the machining method, polishing may be used in combination, and in this case, an arbitrary surface roughness is obtained. In this case, abrasive grains composed of stone, alumina, tantalum carbide, etc. may be used for grinding the abrasive grains, and grinding may be carried out using, for example, oxidized granules, colloidal oxidized granules, cerium oxide, oxidized chin, diamonds, and the like. Regardless of the method, the extraction is performed in such a manner that the through-hole homogeneity or uniformity becomes a numerical value of a desired tolerance range. After the etching step, the through-hole 5 may be filled with a gold object and then subjected to removal processing. . This method is particularly fine, and it is particularly useful when performing the removal process by the mechanical grinding method. When the grinding process is performed, the abrasive grains enter the through hole, and the cleaning step (not shown) can be removed to remove the abrasive particles. . This narrowing through the aperture is more serious. Before the removal processing, the through hole 5 is filled with a metal or an organic substance or the like to be blocked, and it is prevented from entering the through hole. When the through hole is filled with a metal material, it may be removed by a suitable etching solution during the removal process, or a conductive conductor for electrically coupling the wiring pattern (not shown) formed thereon may be used. For the metal material, for example, copper can be used. In this case, by electroless electrolytic plating, or by using the plating methods in combination, the guest can be filled, and the through hole can be filled with the organic substance, and the 312XP/invention specification (refill) is removed. ) /94-01/93129975 BB, the line method can be used for dry mechanical research, which can be determined by the diameter of the drill particles and the diameter of the oxidation. The genus may have a diarrhea effect. After the particles are pre-ground by the addition condition, the perforations in the back surface can be solved or perforated. After processing 12 1333401, it is necessary to remove the organic matter. The organic substance is not particularly limited as long as it is dissolved in a suitable solvent, and waxes such as paraffin wax or microcrystalline wax may be used, or in order to impart such adhesion, rosin or polydecene-based resin may be added. Petroleum resins such as hydrocarbon aliphatics. Further, even if the through hole 5 is not completely blocked by the filler, it is effective to cover the side wall portion of the pendulum 5 with a metal or organic material which can be removed in a subsequent washing step or the like. In this case, the abrasive grains entering the through hole 5 are simultaneously discharged from the through hole 5 in the subsequent cleaning step or the like when the metal or the organic substance is removed. Hereinafter, the present invention will be described in more detail by way of examples. [Example 1] In the present embodiment, a photosensitive glass (trade name: P E G 3 manufactured by Ο Ο Y A Co., Ltd.) having the following composition was used as the photosensitive substrate.
Si〇2: 78.0 重量 ％ L i 〇2 : 1 0 . 0 重量 ％Si〇2: 78.0 wt% L i 〇2 : 1 0 . 0 wt %
Al2〇3: 6.0 重量％ K2O3: 4.0 重量 ％Al2〇3: 6.0 wt% K2O3: 4.0 wt%
Na2〇 : 1 . 0 重量 ％Na2〇 : 1 . 0 wt %
ZnO : 1. 0 重量 ％ZnO : 1. 0 wt %
Au: 0.003 重量％Au: 0.003 wt%
Ag: 0.08 重量 ％Ag: 0.08 wt%
Ce〇2 : 0. 08 重量 ％ 所使用的感光性玻璃基板係5吋方形，板厚為0.65mm。 對該基板，藉由使光罩密接之所謂密接曝光方式，照射紫 13 312XP/發明說明書(補件)/94-01 /93129975 1333401 外線而形成潛像。所使用之光源係1 K W的X e - H g燈，利用 波長320nm之光所測定得曝光量為550mJ/cm2。又，光罩 係使用直徑2 0 // m之圓形圖案，依3 0 0仁m間距於縱橫方向 總計排列9 0 0 0 0個者。經曝光後，即形成潛像之後，便將 感光性玻璃基板在附有攪拌裝置的氣流式加熱爐内，於 5 9 0 °C下施行1小時的熱處理。然後，將由7 v ο 1 %氫氟酸水 溶液中添加有硫酸的混合酸（硫酸濃度：2 0 w t % )所構成之蝕 刻液，喷灑於熱處理後的感光性玻璃基板上，而形成貫穿 礼。 此時，蝕刻液之溫度並未特別的控制。將剛蝕刻完成的 感光性玻璃基板利用晶片切割機（東京精密製）裁斷，並觀 察貫穿孔形狀，結果其形狀為鼓狀，且貫穿孔徑一樣的區 域係基板中央部約〇 . 3 8 m m左右的區域，該區域的貫穿孔徑 為3 7 μ m。在貫穿孔形成之後，便施行感光性玻璃基板的 去除加工。首先，使用由#1000之Al2〇3所構成之研磨粒， 利用雙面平面研削盤，對感光性玻璃基板的表背面施行研 削，接著使用氧化鈽研磨粒，並使用雙面研磨機，施行精 修研磨。精修研磨後的感光性玻璃基板之板厚為〇.3mm， 且表背面總移除量為0. 35mm。 表1所示係剛蝕刻完成以及去除加工後的感光性玻璃基 板之厚度及貫穿孔徑。另外，表中雖記載基板表面與基板 背面，但是僅代表基板任意單面及相對之面。 如表1所示，藉由施行去除加工，基板表背面的貫穿孔 徑為37與39#m，幾乎與上述基板中央部孔徑一致，大幅 14 312XP/發明說明書(補件)/94-01/93129975 1333401 提昇孔徑的均勻性。 [表1 ] 感光性玻璃基板之厚度（mm) 貫穿孔徑（y m ) 基板表面 基板背面 剛蝕刻完成 0.63 83 92 去除加工後 0.31 37 39 [實施例2 ] 本實施例的貫穿孔形成條件與感光性玻璃基板之去除 加工條件，係如同實施例1中所記載的條件。在本實施例 中，係於蝕刻後的貫穿孔中填充高真空黏著劑電子蠟（宗電 子工業股份有限公司製）之後，再施行去除加工。去除加工 後，對感光性玻璃基板使用乙醇、二乙醚及環己烷以1 : 2 : 3 之比例混合之溶劑，施行超音波清洗，溶解去除電子蠟。 表2所示係剛蝕刻完成以及去除加工後的感光性玻璃基板 之厚度及貫穿孔徑。另外，表中的基板表面與基板背面係 與表1相同意義。 [表2 ] 感光性玻璃基板之厚度（mm) 貫穿孔4 呈（χζ m) 基板表面 基板背面 剛蝕刻完成 0. 65 83 92 去除加工後 0.30 37 38 如同實施例1的結果，藉由去除加工，可大幅提昇貫穿 孔徑的均勻性。 表3所示係針對依本實施例之方法所製成的1 0 0片具貫 穿孔基板，就研削或研磨粒殘留於貫穿孔内的貫穿孔數量 及出現頻率，相較於依實施例1方法（即未填充電子蠟便施 行去除加工）所製成之100片具貫穿孔基板的情況。另外， 研磨粒有無殘留係藉由使用穿透光的光學顯微鏡進行觀察 15 312XP/發明說明書(補件)/94-01/93129975 1333401 而判斷。又，每1片基板的貫穿孔數量係如上述的9 0 0 0 0 個。 [表3 ] 不良貫穿孔之數量 實施例2 比較例（實施例1 ) 0 93 2 1 ~ 50 7 29 51-100 0 34 1 0 卜 1 5 0 0 6 1 5 卜200 0 15 20 卜 250 0 1 251-300 0 4 301 〜350 0 2 35 卜 400 0 1 4 0 1以上 0 6 表3中，所謂「不良貫穿孔之數量」係指在所著眼的基 板中，研磨粒殘留於貫穿孔内的貫穿孔數量。例如，相當 於不良貫穿孔數量1 ~ 5 0個的基板片數，在本實施例的情況 中為7片，相對地，在比較例的情況則為29片。 如該表中所示，於本實施例的情況，不良貫穿孔（即研 磨粒殘留於貫穿孔内的貫穿孔）之數量銳減，可確認本發明 在減少不良貫穿孔方面具有明顯的效果。 [實施例3 ] 本實施例的貫穿孔形成條件與感光性玻璃基板之去除 加工條件，係與實施例1相同的條件。在本實施例中，於 蝕刻後的貫穿孔側壁與基板表背面上，利用無電解電鍍法 形成厚度2"m的銅膜。所使用之無電解電鍍的製程係（1) 前處理0(2)預浸潰θ(3)賦予觸媒0(4)觸媒激活0(5)無 電解電鍍。 (1 )前處理係用以將預備密接力強化層1 7形成之後的感 16 312XP/發明說明書(補件)/94-01/93129975 1333401 光性玻璃基板清洗，係使用市售清洗液的美爾得克斯 (Me ltex)公司製之美爾普雷特PC-3 21施行清洗。 (2 )預浸潰為了保護下一個製程的觸媒浴，係將具預備 密接力強化層1 7的感光性玻璃基板2浸潰於預浸液中，預 浸液係使用市售的美爾得克斯公司製之艾普雷特PC- 23 6。 (3 )賦予觸媒為了析出無電解銅鍍層，係使觸媒吸附於 具預備密接力強化層1 7的感光性玻璃基板2上，使用市售 的美爾得克斯公司製之艾普雷特激活劑4 4 4進行處理。 (4 )觸媒激活係使所吸附觸媒活性化，使用市售的美爾 得克斯公司製之艾普雷特PA-360進行處理。 (5)無電解電鍍係用以形成無電解鍍銅膜，鍍液係使用 市售的美爾得克斯公司製之美爾普雷特Cu- 3 9 0。 感光性玻璃基板經去除加工之後，使用由氣化鐵溶液所 構成的蝕刻液，去除貫穿孔側壁部上的銅膜。 依照與實施例2中所記載的相同方法，評估不良貫穿孔 之出現頻率，結果獲得大致與實施例2相同的結果。 以上，雖使用實施例詳盡說明本發明，惟本發明並不受 限於實施例中所記載的感光性玻璃去除條件 '填充物材料 及其填充、去除方法等。 (產業上之可利用性） 本發明係關於在感光性玻璃基板上形成多個一樣且細 微直徑之貫穿孔的感光性玻璃基板之貫穿孔形成方法，可 使用於如雙面佈線基板的製造等方面。 【圖式簡單說明】 17 312XP/發明說明書(補件)/94-01 /93129975 1333401 圖 1 為 用 以 說 明 本 發 明 之 感 光 性 玻 璃基板 之 貫 穿 方法 的 步 驟 流 程 圖 及 各 步 驟 的 感 光 性 玻璃基 板 之 概 面圖 ϊ 圖 1 ( a)為 曝 光 步 驟 示 意 圖 5 圖 1 (b)為 Ί虫 刻 後 礼形 狀 圖 j 圖 1 ( c )為 經 去 除 加 工 後 .之 該形狀 圖 0 圊 2 (a )、 .(b)為 習 知 之 感 光 性 玻 璃 基板之 貫 穿 孔 法之 説 明 圖 〇 圖 3 為 習 知 之 感 光 性 玻 璃 基 板 之 貫 穿孔形 成 方 法 圖。 【主 要 元 件 符 號 說 明 ] 1 感 光 性 玻 璃 2 潛 像 3 光 罩 3a 遮 光 膜 圖 案 4 紫 外 光 5 貫 穿 孔 17 預 備 密 接 力 強 化 層 10 0 感 光 性. 玻 璃 10 1 貫 穿 孔 10 1a 潛 像 1 02 光 罩 102a 遮 光 膜 1 03 紫 外 光 孔形成 略側剖 的貫穿 形成方 之説明 18 312XP/發明說明書(補件)/94-01 /93129975Ce〇2 : 0. 08% by weight The photosensitive glass substrate used was a 5 inch square shape and a plate thickness of 0.65 mm. The substrate is formed by a so-called close-contact exposure method in which the photomask is closely contacted, and a latent image is formed by irradiating the outer line of Violet 13 312XP/invention specification (supplement)/94-01/93129975 1333401. The light source used was a 1 K W X e - H g lamp, and the exposure amount measured by light having a wavelength of 320 nm was 550 mJ/cm 2 . Further, the reticle is a circular pattern having a diameter of 2 0 // m, and is arranged in a total of 9000 in the vertical and horizontal directions according to the spacing of 300 Å. After the exposure, the latent image was formed, and the photosensitive glass substrate was subjected to heat treatment at 590 ° C for 1 hour in a gas flow type heating furnace equipped with a stirring device. Then, an etching solution composed of a mixed acid of sulfuric acid (sulfuric acid concentration: 20% by weight) added to a 7 v ο 1 % hydrofluoric acid aqueous solution was sprayed onto the photosensitive glass substrate after heat treatment to form a pass-through ceremony. . At this time, the temperature of the etching liquid is not particularly controlled. The photosensitive glass substrate which has just been etched is cut by a wafer dicing machine (manufactured by Tokyo Seimi Co., Ltd.), and the shape of the through-hole is observed. The shape of the through-hole is a drum shape, and the area of the through-hole is the center of the substrate about 3 8 mm. The area of this area has a penetration diameter of 3 7 μm. After the through holes are formed, the removal process of the photosensitive glass substrate is performed. First, the surface of the photosensitive glass substrate is ground using a double-sided planar grinding disc using abrasive grains composed of #1000 Al2〇3, followed by using cerium oxide abrasive grains, and using a double-side grinding machine to perform fine polishing. Grinding. 5毫米。 The thickness of the surface of the photosensitive glass substrate is 〇. 3mm, and the total amount of surface and back removal is 0. 35mm. Table 1 shows the thickness and through-hole diameter of the photosensitive glass substrate immediately after etching and removal. Further, although the surface of the substrate and the back surface of the substrate are described in the table, only the single side and the opposite side of the substrate are represented. As shown in Table 1, by performing the removal process, the through-holes of the back surface of the substrate are 37 and 39 #m, which are almost the same as the central portion of the substrate, and are substantially 14 312XP/invention specification (supplement)/94-01/93129975 1333401 Improves the uniformity of the aperture. [Table 1] Thickness (mm) of photosensitive glass substrate Through-hole diameter (ym) Substrate surface substrate back surface just after etching 0.63 83 92 After removal processing 0.31 37 39 [Example 2] Through-hole forming conditions and photosensitivity of this example The conditions for removal of the glass substrate were as described in Example 1. In the present embodiment, the high-vacuum adhesive electronic wax (manufactured by Zon Electronics Co., Ltd.) is filled in the through-hole after the etching, and then the removal processing is performed. After the removal process, the photosensitive glass substrate was subjected to ultrasonic cleaning using a solvent in which ethanol, diethyl ether and cyclohexane were mixed at a ratio of 1:2:3 to dissolve and remove the electronic wax. Table 2 shows the thickness and penetration diameter of the photosensitive glass substrate immediately after etching and removal. Further, the surface of the substrate and the back surface of the substrate have the same meanings as in Table 1. [Table 2] The thickness of the photosensitive glass substrate (mm) The through hole 4 is (χζ m) The surface of the substrate surface is just etched back. 0. 65 83 92 After the removal processing 0.30 37 38 As with the result of Example 1, by removing the processing , can greatly improve the uniformity of the through hole. Table 3 shows the number and the frequency of occurrence of the through-holes in the through-holes of the 100-piece through-hole substrate made by the method according to the embodiment, compared with the embodiment 1. The method (that is, the case where 100 pieces of the through-hole substrate were produced by performing the removal process without filling the electronic wax). In addition, the presence or absence of the abrasive particles was judged by observing an optical microscope using a penetrating light 15 312 XP/invention specification (supplement)/94-01/93129975 1333401. Further, the number of through holes per one substrate is as described in the above-mentioned 9000. [Table 3] Number of defective through holes Example 2 Comparative Example (Example 1) 0 93 2 1 ~ 50 7 29 51-100 0 34 1 0 Bu 1 5 0 0 6 1 5 Bu 200 0 15 20 Bu 250 0 1 251-300 0 4 301 ~350 0 2 35 Bu 400 0 1 4 0 1 or more 0 6 In Table 3, the "number of defective through holes" means that the abrasive grains remain in the through holes in the substrate to be focused. The number of through holes. For example, the number of substrates corresponding to the number of defective through holes is 1 to 50, which is 7 in the case of the present embodiment, and 29 in the case of the comparative example. As shown in the table, in the case of the present embodiment, the number of defective through-holes (i.e., the through-holes in which the abrasive grains remained in the through-holes) was sharply reduced, and it was confirmed that the present invention has a remarkable effect in reducing the number of defective through-holes. [Example 3] The through hole forming conditions of the present Example and the removal processing conditions of the photosensitive glass substrate were the same as those in Example 1. In the present embodiment, a copper film having a thickness of 2 " m was formed by electroless plating on the side wall of the through-hole after etching and the front and back surfaces of the substrate. The electroless plating process used (1) pretreatment 0 (2) pre-impregnation θ (3) gives the catalyst 0 (4) catalyst activation 0 (5) electroless plating. (1) Pretreatment is used to clean the surface of the preliminary adhesion-strengthening layer 17 316XP/Invention Manual (Supplement)/94-01/93129975 1333401 Optical glass substrate, using the beauty of commercially available cleaning solution Merprette PC-3 21 manufactured by Meltex Corporation is cleaned. (2) Pre-impregnation In order to protect the catalyst bath of the next process, the photosensitive glass substrate 2 having the preliminary adhesion reinforcing layer 17 is immersed in the prepreg, and the prepreg is a commercially available mer. Apprex PC- 23 from Dexter. (3) In order to deposit an electroless copper plating layer, the catalyst is adsorbed on the photosensitive glass substrate 2 having the preliminary adhesion-strengthening layer 17 and a commercially available Mercury Co., Ltd. The special activator 4 4 4 is treated. (4) The catalyst activation system activates the adsorbed catalyst, and is treated with a commercially available Aprette PA-360 manufactured by Melex. (5) Electroless plating is used to form an electroless copper plating film, and the plating solution is a commercially available Merpruit Cu-390. After the photosensitive glass substrate is removed, an etching solution composed of a vaporized iron solution is used to remove the copper film on the side wall portion of the through hole. The frequency of occurrence of the defective through-holes was evaluated in the same manner as described in Example 2, and as a result, substantially the same results as in Example 2 were obtained. As described above, the present invention will be described in detail by way of examples, but the present invention is not limited to the photosensitive glass removal conditions described in the examples, the filler material, the filling and removal method, and the like. (Industrial Applicability) The present invention relates to a method for forming a through-hole of a photosensitive glass substrate in which a plurality of through-holes having the same fine diameter are formed on a photosensitive glass substrate, and can be used for, for example, manufacturing of a double-sided wiring substrate. aspect. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart for explaining a method of penetrating a photosensitive glass substrate of the present invention, and a photosensitive glass substrate for each step. Figure 1 (a) is a schematic diagram of the exposure step 5 Figure 1 (b) is the shape of the locust after the engraving. Figure 1 (c) is the shape after the removal of the processing. Figure 0 圊 2 (a) (b) is a description of a through hole method of a conventional photosensitive glass substrate. FIG. 3 is a view showing a method of forming a through hole of a conventional photosensitive glass substrate. [Main component symbol description] 1 Photosensitive glass 2 Latent image 3 Photomask 3a Light-shielding film pattern 4 Ultraviolet light 5 Through-hole 17 Pre-bonding force-strengthening layer 10 0 Photosensitive. Glass 10 1 Through-hole 10 1a Latent image 1 02 Photomask 102a Light-shielding film 101 The description of the through-forming side of the ultraviolet light hole forming a slight side section 18 312XP/Invention Manual (supplement)/94-01 /93129975