1327329 (1) 玖、發明說明 【發明所屬之技術領域】1327329 (1) Description of the invention [Technical field to which the invention pertains]
本發明係有關等價直列電阻（ESR )低，漏電（LC 値）之初期不良率低，特性良好之晶片狀固體電解電容 器。 【先前技術】 向來晶片狀固體電解電容器，已知其構造之斜視圖係 如圖3所示，由閥作用金屬或導電性之氧化物所成之燒結 物之表面，依序形成電介體氧化皮膜層，半導體層及導電 體層之1個固體電解電容器元件（2)之導電體層之一部 份與上述燒結物連接之陽極導線（4a)(陽極部），載置 於由各個外部端子之平板金屬製導線框（1)之一部份之 —對對向配置之先端部（la及lb)，各自以電氣 機械 連接後，僅導線框殘留之外部端子以外裝樹脂封口形成外 裝部（5)後，外裝部之導線框於指定部切斷後曲折加工 者。 —方面，對應近年之電子機械之高週波化，固體電解 電容器亦期望具良好的高週波性能。本發明者等，已於曰 本特開平5 -2 3 4 82 9號公報提案，具有陽極部，由閥作用 金屬所成之陽極基體之表面於其上順序層合按照電介體氧 化物皮膜，半導體層，導電層形成陰極部之複數固體電解 電容器之陰極部之一部份，與具有一對對向配置之先端部 之導線框之一方之先端部並列無間隙載置，又載置於陽極 -5- (2) (2)1327329 部他方之先端部各個以電氣機械連接後’上述導線框之 先端部殘留之一部份以樹脂封口’切斷樹脂封口部外指定 部之導線框加工曲折，顯示良好高週波性能値之晶片固體 電解電容器。 另一方面，晶片固體電解電容器係’與其他電子零件 同時於基板上組合後’搭載於電子機器使用複數年’於基 板上組合階段之晶片固體電解電容器之初期故障率期望儘 可能降低。 【發明內容】 〔發明之揭示〕 大量製作上述良好高週波性能之晶片狀固體電解電容 器時，基板之實施銲接時初期故障率（特別是LC値）出 現不良物。 本發明者等爲解決上述課題經專心硏究結果，使用相 對於晶片體積，除去陽極部之1個燒結物之體積比在特定 範圍之燒結物，製作晶片狀固體電解電容器時，硏究出可 製作初期故障率低，且 SNR小之晶片狀固體電解電容 器，完成本發明。 即，本發明係有關以下之晶片狀固體電解電容器及使 用該晶片狀固體電解電容器之電子機器。 1. 於由閥作用或導電性氧化物之燒結物所成之陽極 基體或由上述燒結物與金屬線之連接物所成之陽極基體一 端之陽極部以外之表面，將電介體氧化皮膜層，半導體層 -6- (3) (3)1327329 及導電層按照順序層合形成陰極部之固體電解電容器元 件’於一對對向配置之導線框之先端部，將複數個無間隙 水平並列’上述陽極部與陰極部，與導線接觸載置連接 後’導線部殘留之外牺部以樹脂封口所成之晶片狀固體電 解電容器，對該晶片體積與除去陽極部之1個燒結物之體 積比爲0.04〜0.110爲其特徵之晶片狀固體電解電容 器。 2 · 陽極部係由陽極基體之末端所成之上述I.記載晶 片狀固體電解電容器。 3 · 陽極部係與燒結物連接之金屬線所成之上述1記 載晶片狀固體電解電容器。 4· 金屬線係由鉅，鈮，鋁，鈦，以此等金屬爲主成 分之合金及此等金屬或上述合金之一部份，以氧化或氮化 所成者所選之上述3記載晶片狀固體電解電容器。 5 . 閥作用金屬或導電性氧化物爲鉬，鈮，鋁，鈦， 以此等金屬爲主成分之合金或氧化鈮，或上述閥作用金 屬’合金及導電性氧化物所選擇之2種以上之混合物之上 述1 sS載晶片狀固體電解電容器。 6. 上述閥作用金屬，合金及導電性氧化物爲此等之 一部份由碳化，磷化，硼化，氮化及硫化所選之至少1種 以上所處理之上述4記載晶片狀固體電解電容器= 7. 上述燒結物係，其表面以化學及/或電氣之蝕 刻所處理者。 8. 陽極基體之陽極部與除去陽極部之殘留部之界面 -7- (4) 1327329 部爲由絕緣性樹脂所絕緣之上述1記載晶片狀固體電解電 容器。 9. 上述電介體氧化皮膜層，其主成分係由Ta205， Al2〇3 ’ Zr2 03 ’及Nb205所選至少1種之上述1記載晶 片狀固體電解電容器。 10·半導體層係’至少1種由有機半導體層及無機半 導體層所選之上述1記載晶片狀固體電解電容器。 11·有機半導體層係，由苯并吡咯烷酮4量體與氯醌 所成有機半導體，四硫并四苯（tetrathiotetracene)爲主 成分之有機半導體，四氰醌二甲烷爲主成分之有機半導 體，·及至少1種由選自，於含下述一般式（1 )或（2 )The present invention relates to a wafer-like solid electrolytic capacitor having a low equivalent in-line resistance (ESR) and low initial leakage rate (LC 値) and good characteristics. [Prior Art] A wafer-like solid electrolytic capacitor is known. The oblique view of the structure is as shown in Fig. 3. The surface of the sintered body formed by the valve action metal or the conductive oxide sequentially forms dielectric oxidation. An anode lead wire (4a) (anode portion) of a portion of the conductor layer of the solid electrolytic capacitor element (2) of the film layer, the semiconductor layer and the conductor layer and the sintered body is placed on the flat plate of each external terminal A part of the metal lead frame (1) is electrically connected to the front end portions (la and lb) of the opposite direction, and only the external terminals remaining in the lead frame are sealed with a resin to form an exterior portion (5) After that, the lead frame of the exterior part is cut at the designated part and then bent. On the other hand, in response to the high frequency of electronic machinery in recent years, solid electrolytic capacitors are also expected to have good high-cycle performance. The inventors of the present invention have proposed an article of the present invention, which has an anode portion, and the surface of the anode substrate formed of the valve action metal is sequentially laminated thereon in accordance with the dielectric oxide film. a semiconductor layer, a portion of the cathode portion of the plurality of solid electrolytic capacitors forming the cathode portion of the conductive layer, and a front end portion of one of the lead frames having a pair of oppositely disposed leading ends arranged side by side without gaps and placed thereon Anode-5- (2) (2) 1327329 The first part of the other side is electrically connected, and the part of the front end of the lead frame is sealed with a resin seal to cut the wire frame of the specified part outside the resin sealing part. Zigzag, a wafer solid electrolytic capacitor that exhibits good high-frequency performance. On the other hand, the initial failure rate of the wafer solid electrolytic capacitor in which the wafer solid electrolytic capacitor is combined with other electronic components on the substrate and mounted on the electronic device for a plurality of years on the substrate is desirably reduced as much as possible. [Disclosure of the Invention] When a wafer-shaped solid electrolytic capacitor having a good high-period performance described above is produced in a large amount, an initial failure rate (especially LC 値) at the time of soldering of the substrate causes an objection. In order to solve the above problems, the inventors of the present invention have made a result of intensive investigation, and when a wafer-shaped solid electrolytic capacitor is produced by removing a sintered body having a volume ratio of one sintered body of the anode portion to a specific range with respect to the wafer volume. The present invention has been completed by producing a wafer-like solid electrolytic capacitor having a low initial failure rate and a small SNR. That is, the present invention relates to the following wafer-like solid electrolytic capacitor and an electronic device using the same. 1. The dielectric oxide film layer is formed on the surface of the anode substrate formed by the action of the valve or the sintered material of the conductive oxide or the anode portion of the anode substrate formed by the connection of the sintered body and the metal wire. , the semiconductor layer -6-(3) (3) 1327329 and the conductive layer are sequentially laminated to form a solid electrolytic capacitor element of the cathode portion at a tip end portion of a pair of oppositely disposed lead frames, and a plurality of gap-free levels are juxtaposed ' The anode portion and the cathode portion are placed in contact with the lead wire, and the ratio of the volume of the wafer to the amount of the sintered body of the anode portion is reduced by the wafer-shaped solid electrolytic capacitor formed by resin sealing. It is a wafer-like solid electrolytic capacitor characterized by 0.04 to 0.110. 2) The anode portion is formed of the end of the anode base. The above I. describes a crystalline solid electrolytic capacitor. 3. The above-described one-wafer solid electrolytic capacitor in which the anode portion is connected to the sintered metal wire. 4) The metal wire is made of giant, bismuth, aluminum, titanium, an alloy containing such a metal as a main component, and a part of the metal or the above alloy, which is selected by oxidation or nitridation. Solid electrolytic capacitor. 5. The valve action metal or conductive oxide is molybdenum, niobium, aluminum, titanium, an alloy or a ruthenium oxide mainly composed of such a metal, or two or more selected from the valve action metal alloy and the conductive oxide. The above 1 sS wafer-mounted solid electrolytic capacitor of the mixture. 6. The above-mentioned valve-acting metal, alloy, and conductive oxide are processed by at least one of carbonization, phosphating, boriding, nitriding, and vulcanization. Capacitor = 7. The above sintered system, whose surface is treated by chemical and/or electrical etching. 8. Interface between the anode portion of the anode base and the remaining portion of the anode portion -7- (4) The portion 1327329 is the above-described wafer-shaped solid electrolytic capacitor in which the insulating material is insulated. 9. The above-mentioned dielectric oxide film layer having a main component of at least one selected from the group consisting of Ta205, Al2〇3'Zr2 03 ' and Nb205. 10. Semiconductor layer system At least one of the above described wafer-like solid electrolytic capacitors selected from the group consisting of an organic semiconductor layer and an inorganic semiconductor layer. 11. Organic semiconductor layer, an organic semiconductor composed of benzopyrrolidone 4 and chloranil, an organic semiconductor containing tetrathiotetracene as a main component, and an organic semiconductor containing tetracyanide dimethane as a main component. And at least one selected from the group consisting of the following general formula (1) or (2)
(在式（1)及（2)所示，R1〜R4爲氫原子，碳數 1〜6之烷基或碳數1〜6之烷氧基，此等可爲相同或相 異，X爲氧，碘或氮原子，R5僅X爲氮原子時而存在， 爲氫原子或碳數1〜6之烷基，R1與R2及R3與R4爲 相互結合爲環狀亦可。） 所示之重複單元高分子以滲雜劑滲雜之導電性高分子 爲主成分之有機半導體之上述10所記載之晶片狀固體電 解電容器= -8- (5) 1327329 12.含一般式（1)所示重複單元導電性高分子，含 下述一般式（3 )(In the formulas (1) and (2), R1 to R4 are a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or an alkoxy group having 1 to 6 carbon atoms, and these may be the same or different, and X is Oxygen, iodine or a nitrogen atom, and R5 is present only when X is a nitrogen atom, and is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and R1 and R2 and R3 and R4 may be bonded to each other in a ring shape. The wafer-shaped solid electrolytic capacitor described in the above 10, which is an organic semiconductor containing a conductive polymer having a dopant as a main component, is a -8-(5) 1327329 12. The general formula (1) is shown. Repeating unit conductive polymer, including the following general formula (3)
(式中所示’R6及R7各自爲獨立之氫原子。碳數1 〜6之宜鏈狀或分岐狀之飽和或不飽和烷基，或該院基相 互於任意位置結合，形成含2個氧之至少1個以上之5〜 7個環之飽和烴之環構造之取代基。.又，上述環狀構造之 飽和烴具有被取代亦可之乙烯撐結合者，含被取代亦可之 苯撐構造者。） 所示之作爲重複構造單元之導電性高分子之上述u 所記載之晶片狀固體電解電容器。 13_導電性高分子爲聚苯胺’聚環氧苯撐，聚苯撑硫 化物’聚噻吩’聚呋喃’聚噻咯，聚甲基噻咯，及此等之 取代衍生物所選之上述1 1所記載之晶片狀固體電解電容 器。 14. 導電性高分子爲，聚（3,4 -乙二氧撑唾吩）之上 述1 3所記載之晶片狀固體電解電容器。 15. 無機半導體至少爲1種選自二氧化鉬，二氧化 鎢’二氧化鉛’及二氧化錳之化合物之上述1 〇所記載之 -9- (6) (6)1327329 晶片狀固體電解電容器。 16. 半導體之導電度爲1〇_2〜l〇_3S/cm之上述10所 記載之晶片狀固體電解電容器。 17. —種使用上述1至16所記載之晶片狀固體電 解電容器之電子線路。 1 8 . —種使用上述1至16所記載之晶片狀固體電 解電容器之電子機器。 〔發明之實施型態〕 根據本發明晶片狀固體電解電谷窃1之型態之圖面說 明。 圖1爲本發明晶片狀固體電解電容器1例之斜視圖。 本例具有，於連接陽極部導線（4a)，由閥作用金屬或導 電性氧化物所成之陽極基體（4)表面以電介體氧化皮膜 層，於其上以半導體層’更於其上以導電性層之順序層合 所形成之陰極部（3)之3個晶片狀固體電解電容器元件 (2)之陰極部之一部份’於一對對向配置之導線框（1) 之另一方之先端部（1 a )無間隙並列載置’又’陽極部導 線（4a)載置於上述他方之先端部（lb)連接各個電氣 機械後，上述導線框（丨）殘留之外部端子部以樹脂封 口，於樹脂封口部外之指定部（圖上無顯示）切斷導線框 曲折加工之構造。 圖2爲本發明晶片狀固體電解電容器之他例之斜視 圖。本例具有，殘留固體電解電容器元件端部之陽極部 -10- (7) (7)1327329 (4)，由閥作用金屬或導電性氧化物所成之陽極基體表面 以電介體氧化皮膜層’半導體層’以導電性層之順序層合 之形成陰極部（3)之3個晶片狀固體電解電容器元件 (2 )之陰極部（3 ) ’於一對對向配置之導線框（！）之另 一方之先端部（la)無間隙並列載置，陽極部（4)載置 於上述他方之先端部（lb)連接各個電氣 機械後，上述 導線框（1 )殘留之外部端子部以樹脂封口，與圖1之例 同樣’於樹脂封口部外之指定部（圖上無顯示）切斷導線 框曲折加工之構造。 本發明所使用之閥作用金屬或導電性氧化物，可列舉 如’鉅，鈮，鋁，鈦，以此等閥作用金屬爲主成分（5 0 質量％以上）之合金或氧化鈮，或上述閥作用金屬，合金 及導電性氧化物所選2種以上之混合物。閥作用金屬，或 上述合金及導電性氧化物等之一部份，亦可進行由碳化， 磷化，硼化，氮化，硫化中所選至少1種處理再使用。 本發明使用之陽極基體爲，上述閥作用金屬或導電性 氧化形成粉末後，燒結之燒結物者，由選擇適宜之成形壓 力與燒結條件（溫度 時間）可變化燒結物之表面積。燒 結後爲更增加燒結物之表面積’燒結物表面亦可以化學及 /或電氣進行蝕刻處理^ 本發明，係以陽極基體（4 )之一部份作爲陽極部使 用。亦可如圖2所示，於陽極基體之末端設置腸極部，又 可如圖1所示，於陽極基體之一部份以金屬線連接作爲陽 極部=金屬線之連接，可於燒結物製作後進行，亦可於燒 -11 - (8) (8)1327329 結物製作前之成形時埋設金屬線的一部份後燒結取得連 接。金屬線之種類，可列舉如鉅，鈮，鋁，鈦，以此等金 屬爲主成分之合金及此等金屬或上述合金及此等金屬或上 述合金之一部份，以氧化或氮化所成者。 金屬線通常使用1mm以下之細線。作爲陽極部之部 份爲防止後述黏著半導體層電容器短路，陽極部與陽極基 體之殘留部之界面部以絕緣性樹脂黏著纒頭絕緣設計亦 可〇 於本發明，陽極部以外形成於陽極基體表面之電介體 化物氧化皮膜層（於陽極部之全部或一部份有該介電性物 氧化皮膜層亦可），可列舉如主成分係至少I種由Ta2〇5， Al2〇3，Zr203，及Nb205等之金屬氧化物所選之電介體 層。該電介體層，可由上述陽極基體於電解液中化成而 得。又如本發明申請人國際公開公報WOO0 / 75943號所 記載由金屬氧化物所選至少1種爲主成分之電介體層與以 磁質電容器所使用之電介體層混合之電介體亦可。 —方面，於本發明之電介體層上方所形成之半導體層 之代表例，係至少1種由有機半導體及無機半導體所選之 化合物。有機半導體之具體例可列舉如，有機半導體層係 由苯并吡咯烷酮4量體與氯醌所成有機半導體，四硫并四 苯（tetrathiotetracene)爲主成分之有機半導體，四氰醌 二甲烷爲主成分之有機半導體，及至少1種選自，於含下 述一般式（1 )或（2 ) (9) 1327329(wherein R6 and R7 are each independently a hydrogen atom; a saturated or unsaturated alkyl group having a carbon number of 1 to 6 or a branched or branched, or the same may be bonded to each other at any position to form 2 a substituent of a ring structure of at least one or more of 5 to 7 rings of saturated hydrocarbons of oxygen. Further, the saturated hydrocarbon of the above cyclic structure may have a substituted ethylene support, and may contain a substituted benzene. The supporter is a wafer-shaped solid electrolytic capacitor described in the above-mentioned u as a conductive polymer of a repeating structural unit. 13_ Conductive polymer is polyaniline 'polyphenylene oxide, polyphenylene sulfide 'polythiophene' polyfuran 'polythiol, polymethylthiol, and the substituted derivatives selected above 1 A wafer-shaped solid electrolytic capacitor described in 1. 14. The conductive polymer is a wafer-shaped solid electrolytic capacitor described in the above description of poly(3,4-ethylenedioxysaponin). 15. The inorganic semiconductor is at least one selected from the group consisting of molybdenum dioxide, tungsten dioxide 'lead dioxide' and manganese dioxide. The -9-(6) (6) 1327329 wafer-like solid electrolytic capacitor described in the above 1 〇 . 16. The wafer-shaped solid electrolytic capacitor described in the above 10, which has a conductivity of a semiconductor of 1 〇 2 to 1 〇 3 S/cm. 17. An electronic circuit using the wafer-shaped solid electrolytic capacitor described in the above 1 to 16. An electronic device using the wafer-shaped solid electrolytic capacitor described in the above 1 to 16. [Embodiment of the Invention] A description will be given of a pattern of a wafer-like solid electrolytic electric grid stealing 1 according to the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an example of a wafer-shaped solid electrolytic capacitor of the present invention. In this example, the anode substrate (4a) is connected to the surface of the anode substrate (4) made of a valve metal or a conductive oxide, and a dielectric oxide film layer is formed thereon, and the semiconductor layer is further mounted thereon. One of the cathode portions of the three wafer-shaped solid electrolytic capacitor elements (2) of the cathode portion (3) formed by laminating in the order of the conductive layer is disposed in a pair of oppositely disposed lead frames (1) The front end portion of one side (1 a ) is placed side by side with no gap, and the external terminal portion remaining in the lead frame (丨) is placed after the front end portion (lb) of the above-mentioned other side is connected to each electric machine. The structure in which the lead frame is meandered is cut by sealing with a resin at a designated portion (not shown) outside the resin sealing portion. Fig. 2 is a perspective view showing another example of a wafer-shaped solid electrolytic capacitor of the present invention. In this example, the anode portion of the residual solid electrolytic capacitor element is located at the end of the section -10 (7) (7) 1327329 (4), and the surface of the anode substrate formed by the valve action metal or the conductive oxide is a dielectric oxide film layer. The 'semiconductor layer' is laminated in the order of the conductive layer to form the cathode portion (3) of the three wafer-shaped solid electrolytic capacitor elements (2) of the cathode portion (3) in a pair of oppositely disposed lead frames (!) The other end portion (la) of the other side is placed side by side without a gap, and the anode portion (4) is placed on the front end portion (lb) of the other side to connect the respective electrical machines, and the external terminal portion remaining in the lead frame (1) is made of resin. In the same manner as in the example of Fig. 1, the structure of the lead frame is bent and bent at a designated portion (not shown) outside the resin sealing portion. The valve action metal or the conductive oxide used in the present invention may, for example, be an alloy or cerium oxide having a valve-acting metal as a main component (50% by mass or more) such as 'gi, bismuth, aluminum, or titanium, or the like. The valve acts as a mixture of two or more kinds of metals, alloys and conductive oxides. The valve action metal, or a part of the above alloy and conductive oxide, may be subjected to at least one selected from the group consisting of carbonization, phosphating, boriding, nitriding, and vulcanization. The anode substrate used in the present invention is such that the valve-acting metal or the conductive oxidized powder forms a sintered body, and the surface area of the sintered body can be changed by selecting a suitable molding pressure and sintering conditions (temperature time). The surface area of the sintered body is increased after sintering. The surface of the sintered body may also be chemically and/or electrically etched. The present invention uses a portion of the anode substrate (4) as an anode portion. Alternatively, as shown in FIG. 2, an intestinal pole portion may be disposed at the end of the anode base body, or as shown in FIG. 1, a metal wire may be connected to one of the anode base portions as an anode portion=a metal wire connection, which may be used for the sintered body. After the production, it is also possible to bury the part of the metal wire during the molding before the -11 - (8) (8) 1327329 formation, and then obtain the connection by sintering. Examples of the metal wire include alloys such as giant, bismuth, aluminum, titanium, and the like, and such metals or alloys and a part of such metals or alloys, by oxidation or nitridation. Adult. Metal wires usually use thin wires of 1 mm or less. The portion of the anode portion is for preventing short-circuiting of the adhesive semiconductor layer capacitor described later, and the interface portion between the anode portion and the remaining portion of the anode substrate is insulated by an insulating resin-bonding head. The present invention may be formed on the surface of the anode substrate other than the anode portion. The dielectric oxide film layer (the dielectric oxide film layer may be present in all or a part of the anode portion), and examples thereof include at least one kind of main component system: Ta2〇5, Al2〇3, and Zr203. And a dielectric layer selected from metal oxides such as Nb205. The dielectric layer can be formed by forming the above anode substrate in an electrolytic solution. Further, as described in the applicant's International Publication No. WOOO/75943, a dielectric layer containing at least one main component selected from a metal oxide and a dielectric layer mixed with a dielectric layer used for a magnetic capacitor may be used. On the other hand, a representative example of the semiconductor layer formed over the dielectric layer of the present invention is at least one compound selected from an organic semiconductor and an inorganic semiconductor. Specific examples of the organic semiconductor include an organic semiconductor in which an organic semiconductor layer is formed from a benzopyrrolidone and an organic semiconductor, and tetrathiotetracene is a main component, and tetracyanide dimethane is mainly used. An organic semiconductor of the composition, and at least one selected from the group consisting of the following general formula (1) or (2) (9) 1327329
Χ· 在式Μ)及（2)所示，Ri~R4爲氫原子，碳數 1〜ό之烷基或碳數1〜6之烷氧基，此等可爲相同或相 異’X爲氧’碘或氮原子，R5僅X爲氮原子時而存在， 爲氫原子或碳數1〜6之烷基，R1與R2及R3與R4爲 相互結合爲環狀亦可。 更於本發明’含上述一般式（1).所示重複單元導電 性高分子，含下述一般式（3)Χ· As shown in the formulae Μ) and (2), Ri~R4 are a hydrogen atom, an alkyl group having 1 to 碳 of an alkyl group or an alkoxy group having 1 to 6 carbon atoms, and these may be the same or different 'X'. Oxygen iodine or a nitrogen atom may be present when R is only a nitrogen atom, and may be a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and R1 and R2 and R3 and R4 may be bonded to each other in a ring shape. Further, the present invention contains a repeating unit conductive polymer represented by the above general formula (1), and contains the following general formula (3).
式中所示，R6及R7各自爲獨立之氫原子。碳數1 〜6之宜鏈狀或分岐狀之飽和或不飽和院基，或該丨完基年目 互於任意位置結合，形成含2個氧之至少1個以上之5〜 7個環之飽和烴之環構造之取代基。又，上述環狀構造之 飽和烴具有被取代亦可之乙烯撐結合者，含被取代亦可之 苯撐構造者。 -13- (10) (10)1327329 含如此化學構造之導電性高分子，帶有電荷可用滲雜 劑滲雜，滲雜劑可使用公知滲雜劑無限制。 含式（1)至（3)所示之重複單元高分子，可列舉如 聚苯胺，聚環氧苯撐，聚苯撐硫化物，聚噻吩，聚呋喃， 聚噻咯，聚甲基噻咯，及此等之取代衍生物或共聚物。其 中，亦以聚噻咯，聚噻吩及此等之取代衍生物（例如聚 (3,4 -乙二氧撐噻吩等）爲理想。 無機半導體之具體例可列舉如至少1種選自二氧化 鉬，二氧化鎢，二氧化鉛，及二氧化錳之化合物。 上述有機化合物及無機化合物，使用之導電度爲1〇·2 〜10_3S/cm範圍者，製作之電容器SNR變小爲理想。 本發明係’於上述方法等所形成之半導體層上設置導 電體層。導電體層可由導電發料之固化，電鎪，金屬蒸 鍍’黏著耐熱性導電樹脂薄膜等形成。導電漿料，以銀漿 料’鋁漿料，碳漿料’鎳漿料等爲理想。此等可使用1種 或2種以上。使用2種以上時，混合使用亦可，或各別層 重疊亦可。適當使用導電漿料以後，放置於空氣中，或加 熱固化。電鍍可列舉如鍍鎳，鍍銅，鍍銀，鍍鋁等。又蒸 鏟金屬可列舉如鋁，鎳，銅，銀等。 具體的’例如’於形成半導體層之陽極基體上依序層 合碳漿料，銀漿料形成導電體層。 如此於陽極基體上層合至導電層形成陰極部製作固體 電解電容器元件。 本發明之晶片狀固體電解電容器，係準備複數個上述 -14- (11) 1327329 固體電解電容器元件，各個固體電解電容器元件之 之一部份，無間隙並列載置於另外準備的一對對向 導線框之一方之先端，更將陽極基體之陽極部載置 導線框之他方之先端部，例如，前者係以導電漿料 後者係點焊連接各個電氣 機械後，殘留上述導線 外端端子部份，以樹脂封口，於樹脂封口外之指定 斷導線框曲加工製作。具體的係如圖1所示，例如 晶片狀固體電解電容器元件，於一對對向配置之 (1 )之另一方之先端部（1 a )無間隙並列載置封 作〗個角型，通常爲直方體型狀晶片狀固體電解電 製作如此固體電解電容器時，收納切斷導線框處， 面及/或底面的一部份設置切割部，作爲區別陽 極，例如置上述切割部或樹脂封口時製作之晶片狀 解電器容易由模具脫離，上及/或下面切削爲斜 角度之細部加工亦可。 上述導線框，如上述切斷加工成爲最終晶片狀 解電容器之外部端子，形狀爲箔或爲平板狀，材質 鐵、鋁或以此等金屬爲主成分之合金。該導線框之 或全部亦可施以銲錫、錫，鈦等之電鍍。導線框與 間亦以鎳等作底鍍。導線框，以框之2邊相互保持 置’由於有間隙各固體電解電容元件之陽極部與陰 絕緣狀。 本發明晶片狀固體電解電容器，相對於電容器 體積，除去陽極部之1個燒結物的體積比爲 陰極部 配置之 於上述 固化， 框作爲 部，切 ，3個 導線框 口，製 容器。 於其側 極或陰 固體電 度造成 固體電 爲使用 一部份 電鍍之 間隙配 極部呈 之晶片 0.42 〜 -15- (12) (12)1327329 0.110，以 0.050 ~0·100 爲理想，更理想爲 0.070 〜0.092 時，ESR與LC値之初期不良率低，可製作良好之晶片狀 固體電解電器。上述體積比低於0.042時，LC値之初期 不良率大，上述體積比大於0.110時，ESR( 100 kHz) 不良。向來之固體電解電容器，依經驗封口內之電容器元 件變小時初期不良率有變小的傾向，本申請之固體電解電 容器元件以複數個並列無間隙載置之晶片狀固體電解電容 器則爲相反，此係可考慮爲，由於電容器元件封口之樹脂 所受的應力因元件之配置狀況而異。一方面，ESR爲陽極 基體之中心與導電體層之距離之函數，與封口內之電容器 元件之大小成比例。由此等事由，以調整電容器之大小作 爲上述體積比指標時，可得到良好上述兩特性之電容器。 本發明晶片狀固體電解電容器之封口所使用之樹脂之 種類，可採用環氧樹脂，酚樹脂，醇酸樹脂等公知晶片狀 固體樹脂封口用之樹脂。又，爲樹脂封口之製造機以使用 壓鑄爲佳。 本發明一般使用之尺寸，特別是長度，幅度及高度， 理想以 7.3 X 4.3 X 1.0 mm，7.3 X 4.3 x 1.8mm，7.3 x 4.3 χ 2.8 mm，7_3 χ 4·3 χ 3.8 mm，6.0 x 3.2 χ 1.0 rnm，6.0 x 3.2 x 1.8mm，6.0 x 3.2 x 2.8 mm，及 6.0 x 3.2 x 3.8 mm之晶片尺寸之電容器爲適用。 又’本發明之晶狀固體電容器，例如，理想爲可使用 於電壓安定化線路，或雜訊去除線路等高容量之電容器。 此等之線路，可利用於個人電腦，伺服器，照相機，電 -16 - (13) 1327329 視，DVD ’ AV機器’行動電話等各種數位機器，或 電源等之電子機器。以本發明製造之晶片狀固體電解 器’由於初不良率小，由使用此等，可得到初期不良 之電子線路及電子機器。 【實施方式】 以下以具體例更詳細說明本發明，本發明不限於 之例。 有關下述例製作晶片狀固體電解電容之銲錫實 件’採取設定高峯260 °C (於150 °C放置4秒其後 23 0 °C以上30秒）模式之反流爐，通過3次之條件。 實裝後之LC ’以4 V之3 0秒値。又各測定數，以n 點’ LC値爲0.1 V以下者爲合格。 實施例1〜3及比較例1〜2 使用CV(容量與化成電壓之積）5萬/g之鉅 如表1所示製作4·〇 X W X 1.8 mm之燒結物（有關鉅 與尺寸Wmm記載於表1)，燒結溫度1421，燒結 20分，燒結物密度6.4 g / cm3，Ta導線線0.24 mm 埋設與燒結物之4 mm尺寸之長方向平行之Ta導線 部份，突出之導線部爲陽極。）。成爲陽極之燒結物於 %磷酸水溶液中浸漬除去導線之一部份，陰極之τ a 極之間附加1 8 V ’於8 01：化成3小時，形成由T a2 〇 5 之電介體氧化皮膜層。除去此燒結物之導線，浸漬於 各種 電容 率低 以下 裝條 昇溫 測定 = 320 粉， 質量 時間 0 ， 之一 0.1 板電 所成 -17- 20% (14) (14)1327329 醋酸鉛水溶液與3 5%過硫酸銨水溶液1 : 1之混合液，於 4〇°C放置1小時後取出水洗乾燥，重複25次，於電介體 氧化皮膜層上形成由二氧化鉛與硫酸鉛之混合物（二氧化 鉛9 6% )所成之半導體層。更於半導體層上按照順序以碳 漿料與銀漿料層合形成陰極部製作固體電解電容器元件。 另外準備表面以鑛鍚ΙΟΟμιη厚度之銅合金導線框 (存在32個幅度3.4 mm之一對先端部部，載置陰極部 部之先端部圖1之段差部份爲0.9 mm，載置部之長度爲 4.3 mm。於兩先端部投影於同一平面時之間隙1mm。） 之一對先端部，將3個上述之固體電解電容器元件無間隙 並列連接（固體電解電容器元件之陰極側，即燒結物4.0 X W之面，載置於存在段差之先端部，固體電解電容器 元件之陽極側，載置於另一方之先端部，前者係以導電漿 料固化，後者係點焊連接各個電氣 機械。於1片導板框 之固體電解電容，係各一對先端部3個，全部合計連接 96個。）。其次，爲封閉導線框之兩先端之一部份與固體 電解電容器元件，以環氧樹脂壓鑄成形，製作7.3 X 4.3 X 2.8 mm尺寸之晶片固體電解電容器（由封閉後口之兩先 端部之封口端面各3.4 mm處切斷，去除殘留框之後，沿 著連接晶片狀固體電解電容器殘留於外側的先端部之外周 曲折加工，成爲外部端子。由1框製作3 2個晶片固體電 解容器。）。 實施例4~ 6及比較例3 : -18- (15) (15)1327329 實施例1燒結物之CV爲8萬/ g，尺寸爲4.0 x w χ 1.0 mm’燒結物以1340 °C燒結30分使燒結物密度爲5.6 g/ cm3 ’以聚噻咯爲半導體層（燒結物交互浸漬於5%嘆 咯醇溶液，與0 · 1 %蒽醌磺酸及硫酸銨之混合水溶液，於 4 0°C重複反應55次而形成），封口後之切斷位置爲2 9 mm以外’與實施例1同樣製作晶片固體電解電器。 實施例7〜9及比較例4 : 實施例1燒結物，尺寸爲4.0 X W X 2.5 mm，以聚乙 二氧撐噻吩爲半導體層（燒結物浸漬於乙二氧撐噻吩與惠 醌磺酸及硫酸銨之水溶液 <各微量溶解 >，電解聚合17〇小 時而形成）’導線框之段差爲1 . 3 m m，晶片形狀爲7.3 X 4·3 X 3.5 mm，封口後之切斷位置爲38 mm以外，與實施 例1同樣製作晶片固體電解電器。 以上製作之各晶片狀固體電解電容器之尺寸W，相對 於晶片體積除去陽極部之1個燒結物之體積比，容量，每 電容器內使用全燒結物質量之容量，ESR(丨00 kHz)，基 板貫裝後之LC良品率（0.1 CV以下爲合格）。此時之電 壓値爲4V)如表1所示。又’容量，ESR爲〇 = 320個 之平均値。 1327329 (16) 表1 W (mm) 體積比 容量 (μΡ) 容量/質量 (μΡ/g) ESR (m Ω ) 故障率 1 0.6 0.049 1 80 2 120 2 1 0/320 2 1 .0 0.082 290 2 100 16 0/3 20 3 1 .2 0.098 340 20 5 0 13 0/3 20 實 4 0.6 0.042 13 0 3 2 8 0 22 0/320 施 5 1.0 0.07 1 220 3 240 20 0/320 例 6 1.2 0.085 250 3 160 17 0/3 20 7 0.6 0.055 240 20 8 0 17 0/320 8 1.0 0.09 1 400 2080 13 0/320 9 1 . 2 0.109 470 2 040 12 0/3 20 比 1 0.5 0.04 1 15 0 2 13 0 26 3/3 20 較 2 1.4 0.114 400 2040 4 1 0/320 例 3 0.5 0.03 5 110 3 3 60 27 4/320 4 1 .3 0.118 500 2000 38 0/320 由比較實施例1〜3與比較例 1〜2，實施例4〜6與 比較例3，實施例7〜9與比較例4，相對於晶片體積除 去陽極部之1個燒結物之體積比，爲0.042〜0.110者， 體積比以外與約略同樣之電容器比較E S R良好，且可製 造故障率小之晶片狀固體電解電容器。 〔產業上之利用領域〕 -20 - (17) (17)1327329 本發明爲提供相對於晶片體積除去陽極部之I個燒結 物之體積比，爲0.042 ~ 0.1 1〇之晶片狀固體電解電容 器’依本發明，可得到E S R良好，且故障率小之晶片狀 固體電解電容器。 【圖式簡單說明】 圖1所示爲將3個具有陽極導線（陽極部）之晶片狀 固體電解電容器元件水平無間隙並列於導線框之先端部載 置狀態之本發明晶片狀固體電解電容器例之斜視圖。 圖2所示爲於燒結物本身具有陽極部晶片狀固體電解 電容器元件水平無間隙並列於導線框之先端部載置狀態之 本發明晶片狀固體電解電容器他例之斜視圖。 圖3所示爲於導線框之先端部載置狀態之向來晶片狀 固體電解電容器例之斜視圖。 【符號說明】 1 導線框 la 導線框先端部 1 b導線框先端部 2 固體電解電容器 3 陰極部 4 陽極基體 4 a陽極導線 5 外裝部 -21 -As shown in the formula, each of R6 and R7 is an independent hydrogen atom. a saturated or unsaturated yard base having a carbon number of 1 to 6 or a branched or branched, or a combination of at least one or more of the two bases containing at least one of two oxygens. Substituents for the ring structure of saturated hydrocarbons. Further, the saturated hydrocarbon of the above-mentioned cyclic structure may have a vinylene bond which may be substituted, and may contain a phenylene structure which may be substituted. -13- (10) (10) 1327329 A conductive polymer having such a chemical structure, which is doped with a chargeable dopant, and a known dopant can be used without any limitation. Examples of the repeating unit polymer represented by the formulae (1) to (3) include polyaniline, polyphenylene oxide, polyphenylene sulfide, polythiophene, polyfuran, polythiol, polymethylthiol. And such substituted derivatives or copolymers. Among them, polythiophenes, polythiophenes, and substituted derivatives thereof (for example, poly(3,4-ethylenedioxythiophene, etc.) are preferable. Specific examples of the inorganic semiconductor include, for example, at least one selected from the group consisting of A compound of molybdenum, tungsten dioxide, lead dioxide, and manganese dioxide. When the conductivity of the above organic compound and inorganic compound is in the range of 1 〇·2 to 10_3 S/cm, the SNR of the capacitor produced is preferably small. In the invention, a conductor layer is provided on the semiconductor layer formed by the above method, etc. The conductor layer can be formed by curing of an electrically conductive material, electric enamel, metal evaporation, a heat-resistant conductive resin film, etc. conductive paste, silver paste It is preferable to use one or two or more kinds of the aluminum paste, the carbon paste, and the like. When two or more types are used, they may be used in combination or may be overlapped with each other. After the material is placed, it is placed in the air or heat-cured. Electroplating can be exemplified by nickel plating, copper plating, silver plating, aluminum plating, etc. The metal of the steaming shovel can be exemplified by aluminum, nickel, copper, silver, etc. Specific 'for example' For forming a semiconductor layer The carbon paste is sequentially laminated on the electrode substrate, and the silver paste forms a conductor layer. The anode substrate is laminated to the conductive layer to form a cathode portion to form a solid electrolytic capacitor element. The wafer-shaped solid electrolytic capacitor of the present invention is prepared by a plurality of the above. -14- (11) 1327329 Solid electrolytic capacitor components, one part of each solid electrolytic capacitor component, placed side by side without gaps, placed at the tip of one of the pair of separately prepared wire guide frames, and the anode portion of the anode substrate The other end portion of the lead frame is placed, for example, the former is electrically conductive paste and the latter is spot-welded to each electrical machine, and the outer terminal portion of the wire is left to be sealed with a resin, and the specified wire frame is sealed outside the resin seal. Specifically, as shown in FIG. 1, for example, a wafer-like solid electrolytic capacitor element is placed in a pair of opposite ends (1) of the opposite pair (1) without gaps. An angular type, usually a rectangular solid wafer-shaped solid electrolytic electric device, which is formed by cutting a lead frame, a surface and/or a bottom surface. The cutting portion is provided as a separate anode. For example, the wafer-shaped electrolyte which is produced when the cutting portion or the resin is sealed is easily detached from the mold, and the upper and/or lower surface is cut into a thin portion. The cutting process is an external terminal of the final wafer-shaped de-capacitor, and the shape is a foil or a flat plate, and the material is iron, aluminum or an alloy mainly composed of such a metal. The lead frame may be solder or tin. Electroplating of titanium, etc. The lead frame and the space are also plated with nickel or the like. The lead frame is held by the two sides of the frame. The anode portion of the solid electrolytic capacitor element is insulated from the cathode due to the gap. In the electrolytic capacitor, the volume ratio of one sintered body in the anode portion is set to the above-described solidification in the cathode portion with respect to the volume of the capacitor, and the frame is cut as a portion, and three lead frame ports are formed. The solid electric power caused by the side pole or the negative solid state is a wafer 0.42 ～ -15- (12) (12) 1327329 0.110 using a part of the plating gap, which is ideal for 0.050 ~ 0·100. When the ratio is preferably from 0.070 to 0.092, the initial defect rate of ESR and LC値 is low, and a good wafer-like solid electrolytic appliance can be produced. When the volume ratio is less than 0.042, the initial defect rate of LC値 is large, and when the volume ratio is more than 0.110, ESR (100 kHz) is poor. In the conventional solid electrolytic capacitor, the defect rate tends to be small at the beginning of the capacitor element in the conventional sealing. The solid electrolytic capacitor element of the present application is reversed by a plurality of wafer-shaped solid electrolytic capacitors placed side by side without gaps. It is considered that the stress applied to the resin of the capacitor element sealing varies depending on the arrangement state of the components. In one aspect, the ESR is a function of the distance between the center of the anode substrate and the conductor layer, and is proportional to the size of the capacitor elements within the seal. For this reason, when the size of the capacitor is adjusted as the above-described volume ratio index, a capacitor having the above two characteristics can be obtained. The resin used for the sealing of the wafer-like solid electrolytic capacitor of the present invention may be a resin for sealing a known wafer-like solid resin such as an epoxy resin, a phenol resin or an alkyd resin. Further, it is preferable to use die casting for a machine for sealing a resin. The dimensions generally used in the present invention, particularly length, amplitude and height, are ideally 7.3 X 4.3 X 1.0 mm, 7.3 X 4.3 x 1.8 mm, 7.3 x 4.3 2.8 2.8 mm, 7_3 χ 4·3 χ 3.8 mm, 6.0 x 3.2 χ 1.0 rnm, 6.0 x 3.2 x 1.8mm, 6.0 x 3.2 x 2.8 mm, and 6.0 x 3.2 x 3.8 mm chip size capacitors are suitable. Further, the crystalline solid capacitor of the present invention is preferably a capacitor of a high capacity such as a voltage stabilization circuit or a noise removal circuit. These lines can be used in personal computers, servers, cameras, electronic devices such as digital computers such as DVDs, DVDs, and mobile phones. The wafer-like solid electrolytic device manufactured by the present invention has an initial failure rate and is used to obtain an electronic circuit and an electronic device which are initially defective. [Embodiment] Hereinafter, the present invention will be described in more detail by way of specific examples, but the invention is not limited thereto. For the following example, the actual soldering of the wafer-shaped solid electrolytic capacitor is adopted. The reflux furnace with a peak of 260 °C (4 seconds at 150 °C and then 30 °C for 30 seconds) is passed. . After installation, the LC' is 4 at 4 V for 3 seconds. In addition, the number of each measurement was qualified as n point 'LC値 of 0.1 V or less. Examples 1 to 3 and Comparative Examples 1 to 2 A sintered product of 4·〇XWX 1.8 mm was produced as shown in Table 1 using CV (product of capacity and formation voltage) of 50,000/g (related to the size and size Wmm) Table 1), sintering temperature 1421, sintering 20 minutes, sintered density 6.4 g / cm3, Ta wire 0.24 mm buried Ta wire portion parallel to the long direction of the 4 mm dimension of the sintered body, the protruding wire portion is the anode. ). The sinter which becomes the anode is immersed in a % phosphoric acid aqueous solution to remove a part of the wire, and a 1 8 V ' is added between the τ a poles of the cathode at 8 01: 3 hours to form a dielectric oxide film of T a 〇 5 Floor. Remove the wire of the sinter, immersed in various low-capacity ratios below the temperature rise measurement = 320 powder, mass time 0, one 0.1 board electricity into -17-20% (14) (14) 1327329 lead acetate aqueous solution and 3 5 a mixture of 1% ammonium persulfate aqueous solution, 1 hour, placed at 4 ° C for 1 hour, taken out and washed with water, repeated 25 times to form a mixture of lead dioxide and lead sulfate on the dielectric oxide film layer (2D Lead 9 6%) formed by the semiconductor layer. Further, a solid electrolytic capacitor element was produced by laminating a carbon paste and a silver paste in this order on the semiconductor layer to form a cathode portion. In addition, a copper alloy lead frame having a thickness of 钖ΙΟΟμιη is prepared (there are 32 amplitudes of 3.4 mm to the tip end portion, and the tip end portion of the cathode portion is placed at 0.9 mm, and the length of the mounting portion is 0.9 mm. It is 4.3 mm. The gap between the two leading ends projected on the same plane is 1 mm.) One of the pair of front end portions, three solid electrolytic capacitor elements are connected side by side without gaps (the cathode side of the solid electrolytic capacitor element, that is, the sintered body 4.0) The surface of the XW is placed at the tip end of the step, and the anode side of the solid electrolytic capacitor element is placed on the other end of the other side. The former is cured by a conductive paste, and the latter is connected by spot welding to each electrical machine. The solid electrolytic capacitor of the guide frame is three pairs of the front end portions, and all of them are connected in total 96.). Next, a part of the two ends of the closed lead frame and the solid electrolytic capacitor element were die-casted with epoxy resin to produce a 7.3 X 4.3 X 2.8 mm wafer solid electrolytic capacitor (sealed by the two apex portions of the closed rear port) After the end faces were cut at 3.4 mm, the residual frame was removed, and then the outer end portions of the wafer-shaped solid electrolytic capacitors remaining on the outer side were bent and bent to form external terminals. 32 wafer solid electrolytic cells were fabricated from one frame. Examples 4 to 6 and Comparative Example 3: -18-(15) (15) 1327329 The sintered product of Example 1 had a CV of 80,000 / g, a size of 4.0 xw χ 1.0 mm', and the sintered body was sintered at 1340 ° C for 30 minutes. The density of the sintered material is 5.6 g/cm3' with polypyrrole as the semiconductor layer (sinter is immersed in 5% sulphuric acid solution, mixed with 0. 1% sulfonic acid and ammonium sulfate, at 40 ° C was repeated 55 times, and the cutting position after sealing was 2 9 mm. A wafer solid electrolytic apparatus was produced in the same manner as in Example 1. Examples 7 to 9 and Comparative Example 4: The sintered body of Example 1 has a size of 4.0 XWX 2.5 mm, and polyethylene oxythiophene is used as a semiconductor layer (sinter is impregnated with ethanedioxythiophene and oxime sulfonic acid and sulfuric acid). Ammonium aqueous solution <different amount of dissolution>, electrolytic polymerization was formed for 17 hours.) The lead frame has a step difference of 1.3 mm, the wafer shape is 7.3 X 4·3 X 3.5 mm, and the cut position after sealing is 38. A wafer solid electrolytic apparatus was produced in the same manner as in Example 1 except for mm. The size W of each of the wafer-shaped solid electrolytic capacitors produced above is the volume ratio of one sintered body of the anode portion to the volume of the wafer, and the capacity, the capacity of the total sintered mass per capacitor, ESR (丨00 kHz), substrate LC yield after completion (less than 0.1 CV). The voltage 値 at this time is 4V) as shown in Table 1. Also, capacity, ESR is 〇 = 320 average 値. 1327329 (16) Table 1 W (mm) Volumetric capacity (μΡ) Capacity/mass (μΡ/g) ESR (m Ω ) Failure rate 1 0.6 0.049 1 80 2 120 2 1 0/320 2 1 .0 0.082 290 2 100 16 0/3 20 3 1 .2 0.098 340 20 5 0 13 0/3 20 Real 4 0.6 0.042 13 0 3 2 8 0 22 0/320 Application 5 1.0 0.07 1 220 3 240 20 0/320 Example 6 1.2 0.085 250 3 160 17 0/3 20 7 0.6 0.055 240 20 8 0 17 0/320 8 1.0 0.09 1 400 2080 13 0/320 9 1 . 2 0.109 470 2 040 12 0/3 20 to 1 0.5 0.04 1 15 0 2 13 0 26 3/3 20 compared to 2 1.4 0.114 400 2040 4 1 0/320 Example 3 0.5 0.03 5 110 3 3 60 27 4/320 4 1 .3 0.118 500 2000 38 0/320 From Comparative Examples 1 to 3 Comparative Examples 1 to 2, Examples 4 to 6 and Comparative Example 3, and Examples 7 to 9 and Comparative Example 4, the volume ratio of one sintered body of the anode portion to the wafer volume was 0.042 to 0.110, and the volume ratio was Other than the approximately the same capacitor, the ESR is good, and a wafer-like solid electrolytic capacitor having a small failure rate can be manufactured. [Industrial use field] -20 - (17) (17) 1327329 The present invention provides a wafer-like solid electrolytic capacitor of 0.042 to 0.1 1 Å in a volume ratio of one sintered body which is removed from the anode portion with respect to the volume of the wafer. According to the present invention, a wafer-like solid electrolytic capacitor having a good ESR and a small failure rate can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing an example of a wafer-shaped solid electrolytic capacitor of the present invention in which three wafer-shaped solid electrolytic capacitor elements having an anode lead (anode portion) are horizontally placed without gaps and placed in a tip end portion of a lead frame. Oblique view. Fig. 2 is a perspective view showing a wafer-like solid electrolytic capacitor of the present invention in which the sintered body itself has an anode-side wafer-shaped solid electrolytic capacitor element horizontally and without gaps and placed at the tip end portion of the lead frame. Fig. 3 is a perspective view showing an example of a wafer-like solid electrolytic capacitor in a state in which the tip end portion of the lead frame is placed. [Description of symbols] 1 lead frame la lead frame tip end 1 b lead frame tip end 2 solid electrolytic capacitor 3 cathode part 4 anode base 4 a anode lead 5 exterior part -21 -