TWI327235B - Lcd panel and array substrate and the method for forming the array substrate - Google Patents

Description

1327235 • IX. Description of the Invention: 1. Field of the Invention The present invention relates to an array substrate, and more particularly to a structure of an array substrate having a color resistance and applied to a display panel. - [Prior Art] - With the advancement of display technology, thin film transistor liquid crystal display (TFT-LCD) has light, thin, low radiation and volume compared with conventional CRT displays. The advantage of being small and not occupying space has become the main product of the display market. In response to the rapid development of liquid crystal display products, the industry competition of LCD panel manufacturers is increasing. A color filter (CF) is one of the most important components in a liquid crystal display. The main function is to enable a liquid crystal display to produce a colored surface. Referring to Figure 1A, there is shown a top view Φ of color filter i, the main components of which include a black matrix 11 and a plurality of color resists 14 in the compartment defined by black matrix 11. Please refer to Figure 1B. Figure 1B is a cross-sectional view of Figure A. The basic structure of the color filter 1 is shown in the figure. The color filter 丨 includes a substrate 10, a black matrix 12, a plurality of color resists 14, and a conductive layer 16. The black matrix 12 is formed on the substrate 1 and is composed of a plurality of blocks. The color resist 14 is also formed on the substrate 10. It is located between two adjacent blocks and has three color resists 14 of red (R), green (G) and blue (B). Among them, the color display of the liquid crystal display is because the white light of the backlight passes through the color resistance 14 on the color filter 5 1327235 1 'will generate three colors of red, green and blue respectively, and through the combination of the three colors, Various colors. The function of the black matrix 12 is to separate the red, green and blue color resistors 14 and cover part of the light of the three colors to prevent the light leakage from affecting the chromaticity, thereby improving the contrast.

Second, due to the different requirements of image chromaticity, manufacturers must adjust the chromaticity of the three colors. In general, when the color resistance of the color filter 1 in the color filter 1 is different, the chromaticity exhibited will be different, and the higher the film thickness, the higher the color resistance 14' high. Therefore, the waste chambers have different color thicknesses 14 of different colors depending on the requirements. For example, in order to make the display surface bluish, in the color resist produced by the color filter, the film thickness of the blue color resist 14 is higher than the red color resist 14 and the green color resist 14, so that the color resists 14 have The film thickness is broken. The difference in film thickness between the color resists of the color filter 1 described above can meet the requirements of image chromaticity, but it may cause the following problems.

After the color resist process, the film surface of the color resist often has the formation of horns (five) lakes, resulting in uneven film surface. Therefore, after the color resist is formed, a flattening step is performed to polish the film surface of the color resist to remove the horn and flatten the surface of the color resist film. However, due to the film thickness difference between the color resists, when the polishing (P-) is performed, only the horn of the color resistance with a high film thickness can be removed, and the thickness of the film is removed by the method. . Therefore, the difference in film thickness between the color resists of each color will cause the color (4) to be completely flattened. 6 1327235 Conductive #ατωH ί (9) will form a layer of conductive layer (10)). In this way, when the color filter is paired with the thin substrate, the power supply function is obtained. (5) Array However, due to the difference in film thickness between the color resists, the conductive layer is not continuously tested. For example, in the w-β lion, since the film thickness of the blue color resist 14 is high, the conductive layer 16 cannot be plated on one side during the plating of the conductive layer 16. negative

In the process of “three”, in the process, a layer of alignment film (such as PI) is coated on the color film, and then the alignment operation is performed by means of nibbing, so that the liquid crystal is divided into a predetermined direction. Tilted. However, since the respective color colors have a difference in film thickness, the alignment on the alignment film layer is made discontinuous, and the liquid crystal cannot be tilted and rotated. In view of the above-mentioned deficiencies in the prior art, it is necessary to provide a practical and effective solution for the current technology. SUMMARY OF THE INVENTION The object of the present invention is to improve the unevenness of the film thickness between the color resists on the array substrate, and to fully flatten all the color resisting surfaces after the Bi (toe) process. Another object of the present invention is to improve the film thickness difference between the color resists on the array substrate so that the film thicknesses of the respective color resists are uniform in height to avoid the problem that the conductive layer is discontinuous. The other object of the present invention is to improve the film thickness difference between the respective color resists on the array substrate so that the problem of the misalignment of the respective layers of the film thickness is caused. Membrane; the purpose is to improve the film gap between the color resists on the array substrate, so that the color of the sensation_film thickness is high,

The weaving rate of the panel. ^aaiI7F The present invention provides an array substrate having a structure comprising a substrate: a black matrix and a plurality of color resists. The black matrix, formed on the substrate, is composed of a plurality of blocks, and the ends of the partial blocks have different thicknesses. A plurality of color resists are disposed on the substrate, and each color is formed between two adjacent blocks ‘and at least one end of the two-phase dragon block is divided. Wherein, both ends of each block are respectively covered by different color resists. The present invention provides a method of fabricating an array substrate, the steps of which are as follows: a substrate is provided. A black matrix is formed on the upper surface of the substrate, and the black matrix is composed of a plurality of blocks, wherein the ends of the partial blocks have different thicknesses. Forming a plurality of color resists on the substrate. 'Each color resist is formed between two adjacent blocks, and respectively covering at least one end of the two adjacent blocks, wherein each end of each block is respectively colored Coverage is blocked. The advantages and spirit of the present invention, as well as the more detailed embodiments, may be further understood by the following embodiments and the accompanying drawings. [Embodiment] Referring to Figures 2A to 2E, a schematic view of a method of manufacturing an array substrate of the present invention is shown. Referring to Figure 2A, a substrate 2 is first provided and a layer of material 22a is applied or deposited over the substrate 20. The material of the material layer 22a is selected from the group consisting of metal or metal compound such as Cr, CrO, Ni, resin, 1327235 dark organic material and Pigment, and the material layer 22a is used to cover different materials. Part of the light of the color, to avoid light leakage affecting the chromaticity, and thus to improve the contrast. In a preferred embodiment, the resin and the pigment are preferably black. Next, the material layer 22a is patterned to form a matrix on the substrate 2A. In this embodiment, the matrix is represented by a black matrix, which is a black moment.

The array is composed of a plurality of blocks, and the production process is shown in Figure 2B. Figure 2B

As shown, a photoresist layer 62 is applied over the upper surface of the material layer 22a, and then the material layer 22a is subjected to a photolithographic etching process using a mask 64 to form a plurality of blocks 22. Wherein the reticle 64 is a halftone mask or a multi-tone mask. Since the above two types of reticle have light-transmitting regions of different light transmittances, the two ends of the slanted portion have different thicknesses. In a preferred embodiment, the reticle 64 has three light transmissive regions: a first light transmissive region (4), a second light transmissive region 64b, and a third light transmissive region 64c. The light transmittance is, from small to large, the first light-transmitting region 64a, the second light-transmitting region _, and the third light-transmitting region 64c. After the exposure and development, the first transmissive region 6 knows that the corresponding material layer is completely engraved, and the material layer corresponding to the second transparent region 64b is singularly engraved. The material corresponding to the third transparent region 64c Layer 22a is also partially or not etched, and if partially etched, it is less severe. U, this _22 has a _ shape and a species, as shown in Figure 2C. The two adjacent light-transmissive regions 64b of the second and second regions 64c have different thicknesses at both ends of the block 22, which are stepped. The d block 22 corresponding to the third through-hole 9 64c adjacent to the first light-transmitting region 64a is a rectangular-shaped block 22 of uniform thickness. Referring to FIG. 2D, after forming a black matrix, a plurality of color resistors 24 are formed on the substrate 20. The color resists 24 include red color resist (r) 24, green color resist (G) 24, and blue color resist (8) 24 colors. The resistance is sequentially formed on the substrate 2G. Each color resist 24 is formed between two adjacent blocks 22 and covers at least one end of the two adjacent blocks 22, wherein each end of each block 22 is covered by a different color resist 24. In the embodiment of the present invention, both ends of the adjacent block 22 covered by the same color resist 24 have equal thicknesses. As shown in Fig. 2D, the red color resist (R) 24, the green color resist (6) 24 and the adjacent blocks 22 covered by the blue color resist (8) 24 have equal thicknesses. It is worth noting that if the chromaticity is to be bluish, and the film thickness is high, the thickness of the adjacent block 4 covered by the blue color resist (8) 24 has a lower thickness. Therefore, the thickness of the three color resists 24 is not equal, and the blue color resist (8) 24 formed on the array substrate has a larger volume than the red color resist (R) 24 and the green color resist (g) 24, that is, the array substrate. The chromaticity that can be presented is bluish. Of course, the thickness of both ends of the phase block 22 covered by the specific color resist 24 can be adjusted according to other requirements such as redness or greenishness of the chromaticity, so as to maintain the equal film thickness of the three color resists 24. . In other words, according to the color requirement, the color resistance of different colors has different volumes. When all the color resists 24 _ thick height, the larger the volume of the 1327235 color resist 24, the lower end of the adjacent block 22 has a lower film thickness height β. Therefore, the present invention mainly utilizes a halftone mask ( A half-tone mask or a multi-tray mask produces a block 22 having a different film thickness, thereby controlling the film thickness of each color resist 24. Generally, in the embodiment of the present invention, the block 22 has a thickness of 1 to 1.5 μm. 5微米。 The red color resistance (R) 24, the green color resistance (G) 24 and the blue color resistance (B) 24 thickness is from 1 micron to 2. 5 microns. Continuing to refer to FIG. 2E, after forming a plurality of color resists 24 on the substrate 20, a conductive layer 26 is formed on the black matrix 22 and the color resist 24, wherein the conductive layer 26 is exemplified as an IT0 transparent conductive layer. Next, a layer-aligned film layer, such as a PI film layer, is applied to the conductive layer 26 in the cell process, and subsequent alignment and assembly procedures are performed. The array substrate of the present invention can be a color filter, which can be applied to the opposite substrate of the active device array substrate, and the color resistance is formed on the active device array (c〇l〇r filter on array, C0A) Two types of liquid crystal display panels. Referring to FIG. 3', FIG. 3 is a schematic diagram of a liquid crystal display panel formed on the opposite substrate of the active device array substrate. The liquid crystal display panel includes an active device array substrate, an array substrate, and a liquid crystal layer 38 disposed between the active device array substrate and the array substrate. The array substrate is disposed above the active device array substrate. The array substrate is constructed in the same manner as the foregoing structure, and includes a first substrate 2, a black matrix and a plurality of color resistors 24. The black matrix is formed on the first substrate 20, and the black matrix is composed of a plurality of 11 1327235' wherein the ends of the partial blocks 22 have different thicknesses. = a plurality of color resists 24, disposed on the first substrate 2Q, and each color resist - adjacent to the block 22, and difficult to cover the two $ two ends: wherein each block 22 is respectively Different colors: In addition, the array substrate further includes a first conductive layer 26 and an aligning film 曰 sequentially formed on the upper surface of the black matrix and the color resistor 24. ,

The active device array substrate includes a first substrate 3Q, and an active column 32 disposed on the second substrate 3. A second conductive early alignment layer 37 is sequentially formed on the active tiller 32. The active device array 32 is exemplified by a thin film transistor array. a Referring to FIG. 4, FIG. 4 is a schematic diagram of a liquid crystal display panel formed by a color fiiter on array (10). The liquid crystal display panel is characterized in that an array of active elements is formed in the array substrate. Above the substrate, _g_ is located below the color resistance and the black matrix. m As shown in FIG. 4, the liquid crystal display panel includes an array substrate, a pair of substrates 50, and a liquid crystal layer 58. Opposite the array substrate, the liquid crystal layer 58 is disposed between the array substrate and the opposite substrate. The array substrate includes a first substrate 40, an active device array 48, a black matrix and a plurality of color resists 44. The array 48 is formed on the first substrate 40, and the active device array 48 is exemplified by a thin germanium transistor array. The black matrix is formed on the first substrate 40, and the black matrix is composed of a plurality of blocks, which make a partial block. 42 has different thicknesses at both ends, as shown in Fig. 4. A plurality of color resists 12 1327235 44 ' are disposed on the first substrate 4G and each color resist is formed between two adjacent blocks 42 The two adjacent blocks are respectively covered by one of the two adjacent blocks, wherein the two ends of each block 42 are respectively covered by different color resists 44. In addition, the array substrate further includes a -first conductive layer 46 connected to the active element 48, and a flat The L layer 49 is formed on the black matrix and the plurality of color resists 44, and a first alignment film layer 47 is formed on the flat layer 49. The opposite substrate 50 includes a second substrate 5 (n, and sequentially). a second conductive layer 5Q2 and a second alignment film layer 503 formed on the first substrate 501. In a preferred embodiment, the first substrate 2, 4 and the second substrate 30, 501 are described above. All of them are transparent insulating substrates. The first conductive layer %, the milk and the second conductive layers 36, 502 are all ITO transparent conductive layers. The first alignment film layers 27, 47 and the second alignment film layers 37, 503 are all pi film layers. In the above embodiment, a half-tone mask (___ mask) is used to form a stepped block 22 having different film thicknesses at both ends to control the film thickness of the color resist 24. However, other technical means may be used. A block 22 having different film thicknesses at both ends is formed. Referring to FIG. 5A, a halftone mask can be used (half_t〇ne mask) Or a multi-tone mask design such that one end of the partial block 22 has a bevel edge. Referring to Figure 5B, the process of forming a black matrix on the upper surface of the substrate 2 First, a material layer is first coated or deposited, and a first photomask etching process is performed to form a first sub-block 221 on the upper surface of the substrate 20. Then, a material layer is coated again, and A second sub-block 222 is formed on the surface of the first sub-block L by performing a micro 13 1327235 shadow etching process by a second mask. The size of the second sub-block 222 is smaller than the size of the first sub-block 221, so that the blocks with different film thicknesses at both ends are, that is, by the second time, the block 221 and the second block 222. Composition, in the preferred embodiment, the block 22 is also stepped. The block 22 having the equal thickness of the two ends can be selectively formed together with the first sub-soul 221 or the second sub-block 222 according to the light-transmitting area design of the two types of reticle. 5微米不。 The thickness of the first block 221 is 丨 micron to 3 microns. Referring to FIG. 5C, in another embodiment, the block 22 having different film thicknesses at both ends may include a third block in addition to the first block 221 and the second block. 223. Referring to FIG. 5β at the same time, after forming the second sub-block 222, the material layer is re-coated, and the lithography etching process is performed by the third photomask to form the third sub-block 223 in the first sub-region. The upper surface of block 221 . The size of the third sub-block 223 is smaller than the size of the first sub-block 221, so that the blocks with different film thicknesses at both ends are, that is, the first sub-block 221 and the second sub-block 222. The third block 223 is composed, and in the preferred implementation, the block 22 is also in the shape of a _. The two blocks of equal height and thickness (10) can be formed by the above-mentioned three kinds of fresh riding zones, selectively formed together with the first block 22, the second block 222 or the third block. The block 22 having different film thicknesses at both ends can be used to reduce the height of the color resist 24 of the film thickness 14 1327235, and can also be used to increase the height of the color resist 24 having a lower film thickness. Referring to FIG. 5D, in the embodiment, the film thicknesses of the original red color resist (R) 24 and the green color resist (G) 24 are higher than the blue color resistance (B) 24 (red color resistance (R) 24 Larger with the green color resistance (g) 24). Therefore, in order to make the film thickness of the blue color resist (B) 24 and the red color resist (magic 24 and green color resist (G) 24, the adjacent block 22 covered by the blue color resist (B) 24 is made. The two ends have a higher thickness to increase the film thickness of the blue color resist (B) 24. In this embodiment, the block 22 having different film thicknesses at both ends is a stepped block 22, which can be utilized. A halftone mask (half_t〇ne paste) is formed. Alternatively, the first sub-block 221 and the second sub-block 222 may be formed in sequence. The method for making the thickness of each color resist film uniform is not limited to In addition to the adjustment of the block with different thickness of the end film, an adjustment layer 29 may be used in combination, and the adjustment layer 29 is formed between the color resistance and the substrate, and can be used to increase the film thickness of the color resistance 24. Please refer to FIG. E to Fig. 5G, respectively, showing the positional pattern of the adjustment layer 29 in the array substrate. Referring to Fig. 5E, the adjustment layer 29 is formed between the color resistance 24 and the substrate 20 to be increased in film thickness, and is located at the phase The adjacent block is 22. As shown in the figure, the film thickness of the original blue color resistance (B) 24 is greater than the red color resistance (8) 24 and the green color resistance (G) 24 Thickness, but after adding the adjustment layer 4 under the red color resistance and the green color resistance (G) 24, all the color resistances can be equalized without affecting the original chromaticity. 15 Refer to Figure 5F to adjust the layer. 29 is formed between the color resist 24 and the substrate 20 whose film thickness is increased, and both ends of which are in contact with the adjacent block 22. As shown, the original blue color resist (8) 24 is thicker than the red color resist (R). ) 24 and green color resistance (G) 24 film thickness, but after the red color resistance (R) 24 -, '·' 色 color resistance (G) 24 added adjustment layer 29, can make all color resistance The height is equal and does not affect the original chromaticity. » The monthly reference, Figure 5G, the adjustment layer 29 is formed between the color resistance 24 and the substrate 20 where the film thickness needs to be increased, and the block 22 is at least partially covered. The layer 29 is adjusted, that is, the partial block 22 is located above the adjustment layer 29. As shown, the film thickness of the original blue color resist (8) 24 and the green color resist (6) 24 is greater than the film thickness of the red color resist (8) 24 * degree ' However, after the red color resist (8) and the adjacent layer 22 are added below the adjustment layer 29, all the color resists can be made equal. It does not affect the original chromaticity. It is worth noting that the material of the 'layer 29 may be indium tin oxide, indium zinc oxide, Ti 〇 2, GZO, ZaO or ZNO. In the two embodiments of Fig. 5e and Fig. 5f The order in which the adjustment layer 29 and the block 22 are formed is not limited; in the embodiment of FIG. 5F, since some of the blocks 22 are located above the adjustment layer 29, the adjustment layer 29 must be formed before proceeding. Forming the block & 曰. In summary, the technical means of the present invention can effectively adjust the film thickness of each color resist on the array substrate, thereby having the following advantages: : improving the problem of uneven height of each color on the array wire In order to make all the color resist film surfaces pass the grinding (p〇Hsh) program, it can be fully flattened. Second, improve the film thickness difference between the color resists on the array substrate, so that the film thickness of each color 丄 327235 is uniform, to avoid the problem of discontinuity of the conductive layer. Second, the film thickness difference between the color resists on the array substrate is improved, so that the film thicknesses of the respective color resists are consistently uniform to avoid the problem of discontinuous alignment of the alignment film layer. 14. Improving the film thickness difference between the color resists on the array substrate, so that the film thickness of each color resist is consistent, so as to improve the process yield of the liquid crystal display panel. The present invention has been described above by way of a preferred embodiment, and is not intended to limit the spirit of the invention and the inventive subject matter. For those skilled in the art, other components or means can be easily understood and utilized to produce the same effect. Modifications made within the spirit and scope of the invention are intended to be included within the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other advantages of the invention will be readily understood by the following detailed description in conjunction with the accompanying drawings in which: Figure 1A is a top view of a color filter; B is a cross-sectional view of a color filter; _FIG—A to FIG. 2E are schematic views showing a manufacturing method of the array substrate of the present invention; FIG. 2 is a first embodiment of the liquid crystal display panel of the present invention. The second embodiment of the liquid crystal display panel of the present invention is a system 17 1327235. FIG. 5A is a first variation of the array substrate of the present invention; FIG. 5B is a second variation of the array substrate of the present invention; The third variation of the array substrate of the present invention; FIG. 5D is a fourth variation of the array substrate of the present invention; FIG. 5E is a fifth variation of the array substrate of the present invention; FIG. A sixth variation; and FIG. 5G is a seventh variation of the array substrate of the present invention.

[Description of main component symbols] 1 : Color filter 11 : Black matrix 14 : Color resistance 20 : Substrate, first substrate 22 : Block 222 : Second block 24 : Color resist 27 : Alignment film layer, An alignment film layer 30: a second substrate 36: a second conductive layer 40: a first substrate 44: a color resist 47: a first alignment film layer 50: a counter substrate 502: a second alignment film layer

10: substrate 12: block 16: conductive layer 22a: material layer 221: first sub-block 223: third sub-block 26: conductive layer, first conductive layer 29: adjustment layer 32: active device array 37: Two alignment film layer 42 : block 46 : first conductive layer 49 : flat layer 501 : second conductive layer 58 : liquid crystal layer 18

Claims (1)

1327235 X. Patent application scope: 1. An array substrate comprising: a substrate; a matrix, on the substrate, the matrix is composed of a plurality of blocks and some of the blocks have different thicknesses at both ends thereof. a plurality of colors m, set on the base of the lining, the chicken: the color _ is formed between the adjacent blocks and respectively covers at least two of the adjacent blocks 2. The array substrate according to claim 1, wherein the array of the members is formed on the substrate. The invention further comprises an active element. The array substrate of claim 1, wherein the two adjacent ends of the block covered by the same color resist have equal thicknesses. 4. The array substrate of claim 1, wherein the portion of the array is stepped. 5. The array substrate of claim 1, wherein the portion of the block has a bevel edge. 5微米。 The thickness of the thickness of the layer is from 1 to 1. 5 microns. 7. The array substrate as described in claim 1 further comprising a conductive layer formed on the matrix and the color resists. 8. The array substrate of claim 7, further comprising an alignment film layer formed on the conductive layer. The array substrate of claim i, wherein the color resists comprise a red color resist, a green color resist, and a blue color resist. 5微米。 The thickness of the red color resist is from 1 to 2. 5 microns. 5微米。 The thickness of the array substrate is 1 to 2. 5 microns. 5微米。 The thickness of the blue color resist is from 1 to 2. 5 microns. 13. The array substrate of claim 1, further comprising an adjustment layer </ RTI> between the color resist and the substrate. The array substrate according to claim 13, wherein the material of the adjustment layer comprises indium tin oxide, antimony zinc oxide, Ti〇2, GZ〇, Za〇, ΖΝ〇 or a combination thereof. The array substrate of claim 13, wherein the matrix at least partially covers the adjustment layer. 16. The array substrate of claim 13, wherein the matrix is in contact with the adjustment layer. The array substrate of claim 13, wherein a portion of the matrix is located on the adjustment layer. 18. If you apply for a patent scope! The array substrate of the item, wherein each of the two ends of the block is covered by a different color resist. A liquid crystal display panel comprising: the array substrate according to any one of the items 18; the opposite substrate is disposed opposite to the array substrate; and a liquid crystal layer, wherein the substrate and the substrate are disposed between. 20. A method of fabricating an array substrate, comprising: providing a substrate; forming a matrix on an upper surface of the substrate, the matrix being composed of a plurality of blocks/in which at least a portion of the blocks have different ends a thickness; and forming a plurality of colors _ silk bottom, each of the color _, the shape of the two adjacent blocks between the blocks and respectively covering at least one end of the region. The method of fabricating an array substrate according to claim 2, further comprising forming an active device array 0 on the substrate. 22. The method of fabricating an array substrate according to claim 2, wherein the step of forming the matrix on the upper surface of the substrate comprises the steps of: coating a material layer on the substrate; coating one The photoresist layer is on the upper surface of the material layer; and the material layer is subjected to a lithography residual process using a photomask to form the blocks. The manufacturing method of the array substrate according to claim 22, wherein the reticle is a half-tone mask, so that some of the blocks have different ends. thickness. 24. The method of fabricating an array substrate according to claim 22, wherein the reticle is a multi-tone mask, so that the two ends of the block are different. thickness of. 25. The method of fabricating an array substrate according to claim 2, wherein the step of forming the matrix on the upper surface of the substrate comprises the steps of: forming a first sub-block on the upper surface of the substrate; And forming a second sub-block on the upper surface of the first sub-block, wherein the block is formed by the first sub-block and the second sub-block. 26. The method of fabricating an array substrate according to claim 25, wherein the first sub-block has a thickness of from 丨 to 13 μm. 27. The method of fabricating an array substrate according to claim 25, wherein the thickness of the block is from 1.1 to 0.5 μm. The method of manufacturing an array substrate according to claim 26, wherein the size of the second sub-block is smaller than the size of the first sub-block. 29. The method of fabricating an array substrate according to claim 25, wherein the step of forming the second sub-block further comprises forming a third time = on the surface of the first sub-block The block is composed of the first block, the second block and the third block. The method for manufacturing an array substrate according to claim 29, wherein the size of the third sub-block is smaller than the size of the first sub-block. 31. The method of fabricating an array substrate according to claim 19, wherein the material of the matrix is selected from the group consisting of Cr, CrO, Ni, dark organic materials, resins, and pigments. The method of fabricating an array substrate according to claim 20, wherein the step of forming a plurality of color resists on the substrate further comprises forming a conductive layer on the matrix and the color resists. 33. The method of fabricating an array substrate according to claim 32, wherein the step of forming the conductive layer further comprises forming an alignment film layer on the conductive layer. 34. A liquid crystal display panel, comprising: an array substrate comprising a first substrate; a matrix formed on the first substrate, the matrix being composed of a plurality of blocks, and a portion of the blocks having different ends a thickness; and a plurality of color resists disposed on the first substrate, and each of the color resists is formed between the two adjacent blocks, and respectively covering one of the two adjacent blocks, wherein each The active device array substrate is oppositely disposed on the array substrate and includes a second substrate; an active device array is disposed on the second substrate; and a The first conductive layer is formed on the active device array and a liquid crystal layer, and is filled between the active device array substrate and the array substrate. 35. The display panel according to claim 34, wherein the two adjacent ends of the block covered by the i color resist have the same 36, and the display panel described in claim 35, wherein the The different volumes 'for the color resists having the same film thickness, the larger the volume 23, the smaller the thickness of the two adjacent ends of the block covered by the color resist. 37. The display panel of claim 34, wherein the portion of the portion is stepped. 38. The display panel of claim 34, wherein the block of the portion has a bevel edge. The display panel of claim 34, wherein the thickness is from 1 micrometer to 1.5 micrometers. 40. The display panel of claim 34, wherein the bismuth material is selected from the group consisting of a dark organic material, a resin, and a raw material &amp; The display panel of claim 34, wherein the panel further comprises a --conducting layer, and the display panel is as described in claim 41, The board further includes an alignment film layer formed on the first conductive layer. twenty four