TWI325627B - - Google Patents

Description

IX. Description of the Invention: [Technical Field] The present invention relates to the manufacture of semiconductor skirts and is related to the ancient mother and s Φ k , which can be well utilized for the thin semiconductor r of the octa-Beton electrode. „ 制造 卞 卞 。 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 And the ancient, #+ office, aspects, miniaturization, high density and speeding have become a demand. Based on the so-called three-dimensional wafers, we can see small and dense semiconductors. It has been developed; and the 6-Hai 3-People's Day film series is a combination of a plurality of semiconductor sundial and other hip-day films. The method of overlapping a plurality of wafers is disclosed. In the aspect of the invention, for example, there is a patent document for the manufacturing process of the prior art semiconductor device. Fig. 7 (4) to (1) are sectional views of the prior art semiconductor device. ^ First 'on the surface of the substrate 5G The side forms the circuit component portion 5丨, The structure is as shown in Fig. 2. Then, a photoresist is applied on the surface side of the substrate 50 to form a photoresist layer; by patterning the layer A, a mask layer 52 having an opening portion 52a is formed. By using the mask layer 52, the circuit element portion 51 and the substrate 5 composed of the stone mu are formed by reactive ion etching (yRIE) or the like to form a non-through hole 53 which is less than 基板μηι from the surface of the substrate. The structure shown in Fig. 7(b) is obtained. Then, the inner wall surface of the non-through hole 53 is formed, and the edge film 54' is obtained as shown in Fig. 7(c). Then, it is formed on the insulating film. The seed layer 55 of the cathode of the electrolysis clock is used as a cathode, and the inside of the non-through hole 53 is filled with I08745.doc 1325627 metal 56 to obtain a structure as shown in Fig. 7(d). The excess metal other than the non-beton hole 53 is removed by chemical mechanical polishing (CMP) to obtain a structure as shown in Fig. 7(e). Next, 'on the side of the circuit element portion 51 of the substrate 50, the double-sided tape is interposed. After the adhesive layer 57 is formed, the support body 58 is bonded together, and the back surface of the substrate 50 is ground to fill In the non-through hole 5653 of the metal substrate is exposed on the back surface side, is obtained as shown in FIG 7 (f) of the structure shown in FIG. Next, the back surface of the substrate into 5〇

仃 Selective etching to obtain a structure as shown in Fig. 7(g). Next, a structure shown in Fig. 7(h) is obtained by stacking an insulating film 59' of SiN, Si〇2 or the like on the back surface of the substrate 50 by a chemical vapor phase "L product method (CVD). #着, The insulating film 59 is removed by the cMp method, and the metal 56 of the through electrode is exposed to obtain a structure as shown in Fig. 10. Next, the support substrate 58 and the adhesive layer 57 are removed, and as shown in Fig. 7(j), According to the above-mentioned steps, a semiconductor device having a through electrode can be manufactured. Patent Document 1: Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei. After the through hole is filled with metal by electrolytic plating, the Si substrate is thinned, so that the metal path is made of the back side of the substrate, and the through electrode is formed in this way; however, ... In the case of the method, S fills the metal in the non-through-penetration, and the plating solution is difficult to supply to the bottom of the non-through hole, and is affected by the hydrogen generated by the electrolytic plating, metal, 4 ^ ^ ^ hole. In order to achieve complete filling, it is necessary to adopt the plating method that adds the complexity of the soil, and the difficulty of plating. This will also make the plating time longer. As a result, the processing cost will increase by 108,745.doc 1325627 This is a problem. The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device, and (4) a method of reliably filling a conductor to form a through electrode by a simple method. The method of manufacturing a semiconductor device according to the present invention is characterized in that, in a state in which the first support is mounted on the surface side of the substrate, the base is made thinner from the back side, and the first support is provided. The second support having the opening is attached to the back surface side of the substrate, and the through hole of the second support opening is formed in the substrate before or after the second support is installed. An insulating film is formed in the inside of the through-hole, and a conductor is filled in the through-hole of the substrate. (Effect of the Invention) In the present invention, since the substrate is thinned while the substrate is supported by the first support, it can be prevented. In the present invention, in the state in which the substrate is supported by the second support having the opening, the base is connected to the opening. The through-hole is filled with the conductor: Therefore, the electro-recording liquid is smoothly moved in the through-hole by the filling of the electrolytic ore method, and the filling of the through-hole is facilitated, and it is easy to remove the electrolytic plating. [Embodiment] The method of manufacturing a semiconductor device according to the present invention is characterized in that the substrate is thinned from the back side thereof while the first support is mounted on the surface side of the substrate. A support is detached from the substrate, and a second support having an opening portion of I08745.doc 1325627 is mounted on the back side of the substrate, and the substrate is formed to be connected to the opening of the second support before or after the second support is mounted. The through hole forms an insulating film inside the through hole, and the inside of the through hole of the substrate is filled with a conductor. The invention can be practiced in various forms as shown below. 1. The first embodiment

A method of manufacturing a semiconductor device according to a first embodiment of the present invention is characterized in that the first support is mounted on the surface of the substrate, the substrate is thinned from the back side, and the first support is unloaded from the substrate. Next, the second support having the opening is mounted on the back surface side of the substrate, a first insulating film is formed on the surface of the substrate, and a through hole connected to the opening of the second support is formed in the substrate, and a second hole is formed in the through hole of the substrate. The insulating film fills the inside of the through hole of the substrate with a conductor. It is also within the scope of the present invention to t3 in the step of the present embodiment 4, and it is not necessary to change the order of the embodiment in the order described, or the embodiment in which the plurality of steps are simultaneously performed. ^1. First - Support Installation Step One step is to mount the first support on the substrate surface side. The material, thickness and shape of the first branch are not particularly limited, but it is preferable to have a degree of rigidity in which the base plate can support the substrate on the substrate. First support ::: It is formed of various materials such as semiconductor (Shi Xi et al), resin, and glass. The shape of the second sun is not particularly limited, but in order to reliably support the substrate, the A plate #*, the substrate is of the same degree or larger than the substrate (area). It is made up of semiconductors such as Shishi substrate, and its thickness is ~700 I08745.doc

" 8 - 1325627 μτη degree is better. The mounting of a support to the substrate is performed by an adhesive layer or the like. The adhesive layer can be made of ultraviolet curing sputum, such as "agent, thermosetting adhesive, double-sided, ❹ electrostatic force, etc., mounted on the substrate of the first support of the substrate, and can be used in the opposing surface of the substrate. All of the contact layers may be provided, or may be provided by merely providing a contact layer in a portion (for example, near the center). As long as the substrate is supported by the second support, any other method may be used for mounting. Generally, before mounting the first support, the circuit component portion is first formed on the surface of the substrate. The circuit component portion is generally composed of a transistor, a library, a resistor, a capacitor, a sensing conductor, and a semiconductor component. The circuit element portion is formed by wiring or the like. The method of forming the circuit element portion is not particularly limited, and is formed by a general semiconductor process. θ 2 2. Substrate thinning step This step is to thin the substrate from the back side thereof. There is no special limitation on the method of thinning the substrate, and the second method is as follows: the following method is used: mechanical grinding plasma etching or gas etching, or even combining the above methods: more than one method. 'To make a thin semiconductor device, the shoulder of the substrate' is such that the thickness of the substrate is 30, μηι. Even if the thickness is thin, the substrate is subjected to the first support when it is thinned, so it is not easily broken. ^ 1-3 The first support removal step is as follows: = the first support is removed from the substrate. The unloading of the first support is performed after the substrate is thinned. Further, the first support is mounted on I08745.doc 5627: When the board is used, if the adhesive layer is used, then the layer will be layered in this step. 1-4. Second support mounting step This step is to mount the second support having the open σ portion on the back surface of the substrate. , the side of the opposite side of the surface of the support body. The second support body is preferably carried out after the first support is removed. Because the second support body is installed before the first support body is removed. When the second support is removed, the second support may fall off. However, if the second support: the adhesive used in the substrate, the double-sided tape is used, the first support is removed. The second support body can also be unloaded in the H holding body ^ ^ such as loading. ~ Servant one support Ann Ί second supports may also be used with the weed was first branch comp m branches of the support material and (iv) the shape of "in two: a first support member may be used with the same method, apparatus: on a substrate. However, the material of the second support, the outer door, ... are different. The second support system has an opening. The opening Μ can be formed by using a material as a mechanical method or the like. Cutting by the first son lithography and surname 】-5. First insulating film forming step A first insulating film is formed on the surface of the second electrode. The first insulating film can be composed of a material generally used in the yoke yoke and a square film or hydrogenation (tetra). This: Love: the absolute edge film Put ===:::Γ. Furthermore, the first-coating (four) material resin is formed by spin coating, or 108745.doc 1325627 is formed by electrodeposition of polytheneimide or the like by 电 it is formed by the step of forming the via hole in the substrate. J The first insulating film is formed on the surface of the substrate to prevent the substrate surface from being contaminated. # _ This wood first insulating film forming step can also be performed after the substrate through-hole forming step, in which case the second insulating film forming step can be simultaneously performed. In this 1-shape, an insulating film can be formed on both the surface of the substrate and the inside of the through-hole of the substrate in a step-by-step manner, so that the number of steps can be reduced. Further, if the IT shape without the first insulation % 无需 is required, this step may not be performed. 6. Substrate through hole forming step This step forms a through hole in which the substrate is connected to the opening of the second support. The size of the through hole of the substrate is not particularly limited, but is preferably smaller than the opening of the second support. In this case, the rabbit 7-speaker a' month is used to smoothly move the electro-recording liquid inside the through-hole in the electric conductor filling step. The shape of the cross section of the through hole (the surface parallel to the surface of the substrate) can be formed into a square, a rectangle or a circle. The through hole may be formed by forming a photoresist pattern on the surface side or the back side of the substrate (i.e., on the second support), and etching the substrate by using the photoresist pattern as an etch mask. Further, the through hole may be formed by using a second support having an opening as a mask to carry out the substrate (4). If the second support is used as a mask, it is not necessary to use a mask for forming a photoresist pattern; in addition, there is an advantage that it is not necessary to align the photoresist pattern with the opening of the second support. The formation of the substrate through-holes can be performed before or after the second support is mounted. If the substrate through-hole is formed before the second support is mounted, the second support of the substrate through-hole should be performed when the second support is mounted.

The two support openings are connected to the substrate through holes. This step is to form a second, rim film inside the through hole of the substrate.

Two insulating film. The second intermediate is generally formed using materials and methods. The first insulating film is formed of the same or different materials, methods, and film thicknesses. 1-8. Conductor Filling Step φ This step forms a conductor inside the through hole of the substrate. The method of filling the inside of the substrate through-hole is not particularly limited, and may be carried out by a CM method, a sputtering method, or the like. However, the filling of the conductor is carried out as follows: • Good: a conductor seed layer is formed inside the through hole, and the conductor is filled with the conductor by electrolytic plating. In the present invention, the plating solution flows smoothly inside the through hole, and the filling of the through holes is facilitated, and hydrogen gas or the like generated during electrolytic plating is easily removed. In this case, the conductive system is preferably composed of copper or a copper-containing alloy. However, if the electroplating method can be used for filling, other metals can be used. Further, after the electric conductor is filled, the electric conductor (e.g., the electric conductor on the surface of the substrate) located outside the through hole is usually removed by a CMP method or the like. The conductor seed layer is preferably formed by a CVD method, a sputtering method, or the like, and has a thickness of a single atomic layer of ~200 ηιη. This is because, if it has such a thickness, it can fully function as a seed layer for electrolytic plating. Further, it is preferable that the conductor seed layer is formed in the through hole through the barrier layer. The barrier layer means a layer having a function of preventing diffusion of a conductor atom to a substrate or the like. By forming the barrier layer, it is possible to prevent the substrate or the like from being contaminated by the atoms of the conductor. iOS 745.doc J2 1325627 can be logged by CVD or ruthenium. The barrier layer is formed by a method such as TiN or TaN. 1-9. Second Support Removal Step The method of the present invention can be more and more advantageous, and the step of removing the second support from the substrate is as follows: In the case where a support is mounted on the substrate, the adhesive layer is also removed at this step. Further, if the von first support does not cause interference, it may not be removed.

2. Second Embodiment The second embodiment of the present invention is characterized in that the method of manufacturing the conductor device is characterized by having the following steps: & u Temple body on the substrate surface side, thinning the substrate from the back side, removing the first support from the substrate, and mounting the second support having the opening on the back side of the substrate, and the opening The portion is larger than the through hole formed in the substrate; the first insulating layer is formed on the surface of the substrate: a through hole is formed in the substrate to be connected to the opening of the second support, and a groove is formed on the back surface of the substrate A second insulating film is formed inside the through hole, and a conductor is filled in the trench and the through hole of the substrate. The description of the first embodiment is also applicable to the present embodiment as long as it does not violate its purpose. The present embodiment is different from the first embodiment in that the second support has a larger opening than the through hole formed in the substrate, and has a step of forming a groove on the back surface of the substrate. Although it is preferable that the groove on the back surface of the substrate is formed using a second support as a mask, a photoresist pattern may be formed on the back surface of the substrate, and the photoresist pattern may be formed as a mask. Further, a semiconductor manufacturing apparatus having a trench wiring and a through electrode can be manufactured by filling the inside of the trench formed in the substrate and the via hole with a dielectric of 108745.doc 13 1325627. 3. Third Embodiment A semiconductor device according to a third embodiment of the present invention is characterized in that a circuit element portion is formed on a surface of a substrate, and a through hole penetrating through the substrate and the circuit element portion is formed in the substrate and the circuit element portion of the through hole. An insulating film is formed on the surface of the side portion and the circuit element portion, and a conductor is filled in the through hole to have a conductor layer from the back surface of the substrate to the surface of the circuit element portion. The description of the above embodiment is also applicable to the present embodiment as long as it does not violate its purpose. The semiconductor device can be manufactured by using the above-described method of manufacturing a semiconductor device. Since the semiconductor device of the present invention has an insulating film on the surface of the substrate, the circuit element portion can be protected. The following 'specific examples are set forth for the present invention. First Embodiment Fig. 1 is a cross-sectional view showing a manufacturing step of a semiconductor device of a first embodiment. The following description will be made with reference to Fig. 1 for the present embodiment. h-Supporting body mounting step First, a circuit component portion n having a specific function is formed on the substrate 10. Then, the first support 18 is attached to the surface of the obtained substrate (the surface on which the circuit component portion is formed) by the adhesive layer i7a composed of an adhesive, and is obtained as shown in Fig. 1(a). structure. The first support body 18 is a ruthenium plate having a diameter of 8 吋 and a thickness of 300 700 μΓη (preferably 5 〇〇μιΏ), and has a substrate 10 of the same size as the substrate, and can be mounted by the following method. For example, if the adhesive of the polyimide resin is applied to the substrate 1 by the thickness of J0S745.doc • 14-1325627, the first support 丨8 is pressed against the substrate by the adhesive. In this state, 3 1 (TC, 30 ° heat treatment, the adhesive is hardened. Also - in the adhesive, UV curing adhesive can also be used, in this case, coated with a thickness of 100 ~ 200 μπι The substrate 1 is placed on the substrate, and the first support 18 is pressed against the substrate by the adhesive, and heated to 1 〇〇 to 15 〇 <> c, and UV irradiation is performed in this state to harden the adhesive. Alternatively, the adhesive may be replaced by a double-sided tape. 2. The substrate thinning step is followed by 'retracting the back side of the substrate 1' in a state where the first support 18 is mounted' to obtain a structure as shown in Fig. i(b). Here, the substrate is retracted by mechanical grinding, chemical grinding, plasma etching or In terms of processing conditions, for example, in the case of mechanical grinding, the rough grinding system uses a #300 to 200 degree vermiculite, and after grinding, the final modified grinding system uses #2〇〇〇 degree of meteorite. Grinding is carried out. The number of revolutions of the paper stone is set to 2000 to 3000 rpm/min. The thickness of the substrate 1 after retraction is preferably 30 to 1 pm. 3. First support removal step Next, The first support 18 on the surface of the circuit component portion u is removed. The removal of the support 18 is carried out by using a temperature of about 12 in a stripping solution of monoethanol and dimethylformamide. The substrate is immersed to remove the adhesive layer. 4. First support removal step Next, on the back side of the obtained substrate, an adhesive layer 17b composed of an adhesive is applied to have an opening 2〇a The second support body is 108745.doc 15 1325627 The diameter, thickness, material and mounting method of the second support body 20 are the same as those of the first support body 18. The second support body 2 has an opening portion 2〇&;; opening 2〇& diameter 10, μΓΠ The degree is larger than the beacon hole formed in the substrate 10 in the subsequent step. The appearance of the second support is 'having a plurality of openings as shown in Fig. 5(c). 5 · First insulating film forming step Next, a first insulating φ 'edge film 19' having a thickness of 1 〇〇 5 5 nm is formed on the surface side of the substrate ίο to obtain a structure as shown in the figure. The first insulating film is formed by a ruthenium oxide film or nitrided. The ruthenium film or the like is formed by, for example, a plasma CVD method. In the case of a ruthenium oxide film, it is formed under the following conditions: gas: TE〇s • _ call / 〇 2 65 〇 cc, pressure: 8.5 Torr, P〇wer: 8〇〇w, temperature: 50~100 °C. Further, the first insulating film 19 may be spin-coated at a speed of 1000 to 5000 rpm/min by a resin such as polyimide or epoxy resin to form a thickness of 100 to 5000 nm. Further, the first insulating film 19 may be a laminated insulating film which is formed by laminating a tantalum oxide film and a tantalum nitride film in accordance with this order. The thickness of the laminated insulating film is 100 to 5000 nm, and the film thickness of the nitrided film is 20 to 500 ηηι. In the present embodiment, the first insulating film 19 is formed on the surface side of the substrate 10. As in the prior art, in the case where the insulating film is formed on the back surface of the substrate, that is, the surface on which the substrate has been thinned (refer to Fig. 7 (h)), since the processed surface after thinning cannot be flat, the insulating film cannot be uniformly formed. However, as in the present embodiment, an insulating film is formed on the surface side of the substrate, and the insulating film is easily formed uniformly. Further, unlike the prior art, in the present embodiment, an insulating film is formed before the copper filling step. For this reason, it has the following advantages: Insulation 108745.doc 1325627 The film forming apparatus is free from contamination by steel and does not require specialization of the apparatus. 6. Substrate through hole forming step Next, a photoresist layer is formed on the first insulating film 19 on the surface side of the substrate 10 to form a photoresist layer; by patterning the layer, a mask having an opening portion is formed. The layer 12 and the opening (2) are formed on the substrate. Corresponding hole. Then, the first insulating film 19, the circuit element portion u, the substrate, and the adhesive layer 17b are sequentially formed by the method of "using the mask layer 12 by a reactive ion ray" or the like, and the through holes 13 are formed in the substrate 1G. , the structure shown in Figure 1 (d) is obtained. Since the through hole 13 is connected to the opening 20a of the second support 20 (for example, since the centers of the two are identical), the through hole 13 is not blocked by the support 2〇. In terms of the conditions of the RIE, for example, the case where the first insulating film 19 is a tantalum nitride film is a CF4/〇2 gas, and the tantalum of the substrate 10 is etched with an SF0/〇2 gas (gas: 150CC/O2 50). ~l〇〇CC, pressure: 1〇〇~3〇〇mT〇rr ' Rf p.: 100~500 wp circuit element part u 矽 oxide film and adhesion layer i7b is etched with CF4/〇2 gas The etching is performed at a temperature that does not cause the support 18 to be peeled off, that is, it is preferably treated with 〜1 (eight) c. In terms of the size of the through hole 13, the square-side, or the diameter of the circle, or the long side of the rectangle It is 500 μηη or less, or 100 μηι or less, preferably 5 〇μηι or less, or even 1 〇μιη. 7. Second insulating film forming step Next, after removing the mask layer 12, inside the through hole π (that is, the second insulating film 14 is formed on the side wall of the through hole.) The structure shown in Fig. 1 is obtained. For example, if one side of the through hole 13 is 10 μηι, the second insulating film 108745. The thickness of doc 17 1325627 14 is formed to the extent of 100 to 200 nm. The second insulating film 14 is formed by plasma CVD. The conditions are: temperature: 4 〇〇 it, gas: TE〇s 680 mg/02 650 cc, pressure: 8.5 T〇rr, p〇wer: 8〇〇w, deposition rate: 100~200 nm/min. The reason for the plasma CVD method is that even if the film thickness is thin, the coverage is large and the film quality is good. If one side of the through hole 13 is 1 μm, the second insulating film 14 is thick to the extent of 2 to 3 μm. When the size of the through hole 13 is large, the surface area is increased, so that the parasitic capacitance is also increased by φ. Therefore, the film thickness is increased to reduce the parasitic capacitance. Further, the second insulating film can also be used. Formed by: applying a voltage to the surface of the substrate by using a ruthenium substrate as an electrode in a 15 〇 之 之 之 醯 溶液 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( 析 析 析 析 析 析 析 析 析Electrodeposition is performed. 8. Copper filling step 8-1. Barrier layer and copper seed layer forming step Next, a barrier layer is formed on the surface of the substrate 10 and the inside of the through hole 13 from the surface side of the substrate ίο The copper seed layer 15 is obtained as shown in Fig. i(f). The barrier layer is composed of a TiN layer or the like, and the thickness is It is 5 to 15 〇 nm, but is preferably formed to be 1 〇 nm. The copper seed layer is thicker than the thickness of the monoatomic layer to 2 〇〇 nm, but preferably formed to be 1 〇〇 nm. It is formed by a CVD method or a flooding method, etc. If the cvd method is used, the layer is made to react with 贿((:2Η5)2)4 and bribe 3 or 仏, and grows at a temperature of 15 〇m. The copper seed layer 15 is formed by using Cu(hfac)(tmvs) as a raw material at a temperature of 15 °C. & 8-2. Copper plating step Next, using the copper seed layer 15, by electrolytic plating, fill the through hole Η 108745.doc -18· 1325627 = copper 16, as shown in Figure 1 (g) The structure. Since the second support 2 has an opening 2〇a in the portion of the through hole 13, the electric ore liquid flows smoothly through the through hole. Based on this, the air bubbles can be removed and caused by good efficiency: the diffusion of the seed should be inhibited, so that the generation of holes can be suppressed, and complete filling becomes possible; and the hydrogen bubbles are generated by electrical decomposition and adhered to The surface in the through hole 13 is the surface. For de-inflammation, in order to achieve complete filling and prevent jagged, it is preferable to plate copper to a thickness of 5 to i 到 on the surface of the substrate. Here, in the case of copper plating, t is performed by using CuS〇4·5H2〇 and H2S〇dC1• as an electro-recording liquid, and performing electrolytic electrowinning at a temperature of hunger. 8-3XMP Step Next, the copper 16 on the first insulating film 19 is removed by the CMP method, and only the copper 16 remains in the through hole 13, and a structure as shown in Fig. 1(h) is obtained. In the present embodiment, 'the copper 16 is formed on the first insulating film 19, and since the first insulating film 19 is generally flatter than the back surface of the substrate, the removal of the copper by the CMp method is easier. 9. Second support Body Removal Step Next, the second support 2 on the back surface of the semiconductor substrate 10 is removed to obtain a structure as shown in Fig. 1(i). The removal of the second support 2 is performed by: The substrate was immersed in a stripping solution of monoethanol and dimethylamine in a temperature of about 12 ° C to remove the adhesive layer 17b. By the above steps, a semiconductor device having a through electrode was fabricated. A cross-sectional view showing the manufacturing steps of the semiconductor device of the second embodiment. J08745.doc • 19· 丄 milk 627 Hereinafter, the present embodiment will be described with reference to Fig. 2. 1 · Supporting body mounting steps: first, the first and the first In the same manner as in the embodiment, the first support 18 is mounted on the surface side of the substrate ι to obtain a structure as shown in Fig. 2(a). 2. The substrate thinning step is followed by the same method as in the first embodiment. , 'Acquired' 2 (b) structure of the material. 4 3. First support removal step First, the first support is "detached from the substrate by the same method as the first embodiment. 4. The second support mounting step is followed by the first implementation In the same manner, the second support 21 is attached to the back side of the substrate 1. In the present embodiment, the through hole 13 is formed in the substrate in the subsequent step, and the first support 21 is regarded as Since the mask is used, it has the same opening 21a as the through hole 13 formed in the substrate 10. 5. First insulating film forming step Next, on the surface of the substrate 1 by the same method as the first embodiment The first insulating film 19 is formed on the side to obtain a structure as shown in FIG. 2(c). 6. The substrate through-hole forming step is followed by the first support 21 as a mask, by a reactive ion characterization method (RIE) or the like. The adhesive layer 17b, the substrate 1A, the circuit element portion, and the first insulating film 19 are sequentially etched, and a through hole 3 is formed in the substrate, and the structure shown in FIG. 2(d) is obtained. The conditions are the same as in the first embodiment, I08745.doc 1325627. Also, in this step, the second The holder 21 is also etched by the thickness of the substrate 1 (30 to 100 μm) + excessive etching amount to reduce the thickness, but if the thickness can be reduced in the subsequent step, this one The reduction does not pose a problem (if necessary, a support having a reduced thickness is considered) 7. The second insulating film forming step is then formed inside the through hole 3 by the same method as the first embodiment. The second insulating film 14 is obtained as shown in Fig. 2(e). 8. Copper filling step Next, a copper seed layer 15 is formed by a barrier layer in the same manner as in the first embodiment (Fig. 2(f)), copper 16 is filled in the through hole ^ by electrolytic plating (Fig. 2 (g)), and unnecessary copper is removed by CMP (Fig. 2 (h)). 9. First support But in the next step, the second support is removed by the same method as in the first embodiment, and the structure shown in FIG. 2(i) is obtained. In the manufacturing method of the semiconductor device of the present structure, the second The support body is a mask, and a through electrode pattern # can be formed on the substrate, thereby reducing the mask sheet and the photoresist Therefore, it is possible to achieve a shortened TAT (TurnAr〇undTime from order to delivery) and a reduction in cost. Third Embodiment FIG. 3 is a cross section of a semiconductor device and a manufacturing step of the third embodiment. FIG. 3 is a description of the present embodiment. The L first support mounting step firstly installs the first support on the surface 108745.doc 1325627 side of the substrate H) by the same method as the first embodiment. The body 18 is obtained as shown in Fig. 3 (a). The substrate thinning step is performed to perform thinning of the substrate 10 on the first support i 8 . Next, by the same method as in the first embodiment, the image is obtained as shown in Fig. 3. (b) The structure shown. 3. First Support Removal Step Next, the substrate is detached from the substrate by the same method as the first embodiment.

4. Second support mounting step Next, the second support 22 is attached to the back side of the substrate 1 by the same method as the first embodiment. In the present embodiment, in order to form the groove ^ in the substrate 1 in the subsequent step, the second support 22 is used as a mask so that it has the opening 22a of the same size as the groove n formed. 5. First insulating film forming step

Then, by the same method as in the first embodiment, the first insulating film 19 is formed on the surface side of the substrate 1 to obtain a structure as shown in Fig. 3(c). 6. Substrate through hole forming step Next, by forming a through hole 13 in the substrate 1 by the same method as in the first embodiment, a structure as shown in Fig. 3(d) is obtained. 7. Groove forming step Next, the second support 22 is used as a mask, and the substrate is etched from the back side to form a trench 23 on the back surface of the substrate, thereby obtaining a structure as shown in Fig. 3(e). Further, the trench may be formed by using a second support having a larger opening than the formed trench to form light on the surface of the substrate by light lithography. The resist pattern is formed by using the photoresist pattern as a mask to form a trench. 8. Second insulating film forming step Next, the second insulating film 14 is formed inside the trench 23 and the through hole 13 by the same method as in the first embodiment, and the structure shown in Fig. 9 is obtained. 9. Copper filling step Next, by the same method as the first embodiment, the barrier is formed,

The steel seed layer 15 (Fig. 3(g)) is filled with copper 16 (Fig. 3(h)) in the through (4) by electrolytic electrowinning, and the unnecessary copper is removed by the CMP method (Fig. 3(1)). The CMP on the back side is performed by applying a pressure (for example, 20 kPa or less) to the extent that the second support 22 is not peeled off. 1〇·First Support Removal Step The second support 22 can be simultaneously formed with a groove. Next, the structure shown in Fig. 3(j) is obtained by the same method as in the first embodiment. A method of manufacturing a semiconductor device according to the present invention is a wiring and a through electrode. Fourth Embodiment FIG. 4 is a cross-sectional view showing a manufacturing step of a semiconductor device of a fourth embodiment. Hereinafter, the present embodiment will be described with reference to FIG. 4. The present embodiment is similar to the first embodiment, but the following points are the same: the circuit component portion formed on the substrate 10 includes the wiring layer Ua, and the wiring = "a system and the portion where the through hole 13 is formed Adjacent settings. The wiring layer is electrically connected to various circuit elements in the circuit component portion 1A. The first support film forming step to the first insulating film forming step is first performed by the same method as the first embodiment, from the first support 108745.doc -23· 1325627 body mounting step to the first insulating film forming step. The structure shown as circle 4 (a). As described above, in the present embodiment, the circuit element portion includes the wiring layer 11a. 2. The substrate through hole forming step. Next, the photoresist is formed on the first insulating layer 19 on the surface side of the substrate 10. The resist layer is patterned by this layer to form a mask layer 12 having an opening portion na. In the present embodiment, as shown in Fig. 4 (b), the size of the opening portion 12a is made larger than that of the through hole 13 formed in the substrate 1A. Next, the first insulating film 9, the circuit element portion u, the substrate 1A, and the adhesive layer 17b are sequentially etched by the reactive layer etching (RIE) or the like by the mask layer 12, on the substrate 1 The through hole 13 is formed, and the structure (4) shown in FIG. 4(b) is obtained under the condition that the wiring layer lu serves as a stopper layer. Based on this, the size of the through hole 13 is determined in accordance with the arrangement of the wiring layer m; the size of the through hole 13 is smaller than the opening of the mask layer 12a. 3. Second insulating film forming step The second insulating film 14 is formed inside the through via by the same method as the first embodiment, and a structure as shown in Fig. 4(c) is obtained. 4. Copper Filling Step Next, by the same method as the first embodiment, a copper seed layer 15 is formed by interposing a barrier layer (Fig. 4 (4)), and copper (16) is filled in the through hole (4) by electrolytic plating ( Fig. 4(e)), the unnecessary copper is removed by the CMP method (Fig. 5. The second support removal step is followed by the same method as the first embodiment, the second support body 108745. Doc • 24 - 1325627 is removed to obtain the structure shown in Fig. 4(g). According to the present embodiment, the semiconductor device having the through electrode can be easily fabricated, and the through electrode is electrically connected to the wiring layer (The shape of the substrate used in the above embodiments and the substrate obtained in each of the above embodiments) FIG. 5 shows the element wafer (substrate formed with the through holes) and the second support 20, 2 Figure 5 (a) shows the component wafer 24; Figure 5 (b) shows the monolithically enlarged component wafer 24a of the component, which has a pattern of through holes ^. Figure 5 (4) shows the second support 2(), 21. Fig. 5(4) is an enlarged view of a portion 26 corresponding to the element wafer 24a, which has a pattern pair with the through hole In the case of the second support used in the first embodiment, the opening portion 27 (four) is a mask for forming a through hole in the substrate, so that the size is the same as that of the through hole 25. The size of the opening portion 27 of the second support of the embodiment is preferably larger than the number of the through holes 25. Further, the pattern of the opening portion 27 of the second support used in the first embodiment can also be used. As shown in Fig. 5 (4), the through hole 25 is a pattern similar to the opening portion 28 which is integrally covered. Further, the shape satisfies the following conditions: the first support does not hinder the electrolysis while maintaining the wafer supporting function. The pattern of the plating solution at the time of plating can be used as a pattern other than the pattern. (The stacked type device using the semiconductor device obtained in the above embodiment) Fig. 6 is a layered semiconductor device used in The semiconductor device having the Z-beat electrode obtained in Embodiments i to 4 is shown in Figure 6(b). The bottom surface (a) of the device is the 1-1 cross-sectional view in (b). The device is in the interposer 3 1 is equipped with 108745.doc • 25· 1325627. The semiconductor device 32 has The through electrode 32a and the trench wiring (width 1 〇 to 2 〇〇 μη) 321 obtained in the third embodiment; and the semiconductor device 33 having the through electrode obtained in the embodiment 丨, 2 or 4. . Four semiconductor devices 33 are stacked. The interposer 31 is provided with a bump ball (diameter 30 to 2 〇〇 μΓη) 35 on the back side, and has a through electrode (diameter 1 〇 to 100 μm) 3 1 a in the interposer. The through electrodes 32a and 33a of the semiconductor devices 32 and 33 are electrically connected to each other, and the trench wiring 32b, the interposer through electrode 31a, and the bump ball 35 are electrically connected to each other. Therefore, by forming the structure shown in Fig. 6, a laminated semiconductor device in which all of the semiconductor devices of the respective layers and the bump balls on the back surface of the interposer 31 are electrically connected can be obtained without using wiring leads or the like. BRIEF DESCRIPTION OF THE DRAWINGS Figures Ua) to (i) are cross-sectional views showing a manufacturing step of a semiconductor device according to a first embodiment of the present invention. 2(a) to (i) are cross-sectional views showing a manufacturing step of a semiconductor device according to a second embodiment of the present invention. Fig. 3 (a) to (j) are cross-sectional views showing a manufacturing step of a semiconductor device according to a third embodiment of the present invention. 4(a) to 4(g) are cross-sectional views showing a manufacturing step of a semiconductor device according to a fourth embodiment of the present invention. 5(a) to 5(e) are plan views showing the shapes of the element wafer and the second support of the embodiment of the present invention. Fig. 6 (a) and (b) show a layered semiconductor device using the semiconductor devices obtained in the first to fourth embodiments; (a) is a cross-sectional view, and (b) is a bottom view. 108745.doc • 26- 1325627

7(a) to (1) are cross-sectional views of a manufacturing process of a semiconductor device of the prior art [description of main components]. 10 '50 semiconductor substrate 11, 51 circuit element portion 11a metal wiring layer 12, 52 photoresist 13, 53 through hole 14 second insulating film 15, 55 seed layer 16' 56 conductor 17a, 17b, 57 adhesive layer 18 first support 19 first insulating film 20' 21, 22 second support 20a, 21a, 22a second support Body opening portion 23 groove 24 element wafer 24a element wafer 25 element wafer through hole 26 portion 27' 28 corresponding to the element wafer on the support body. opening portion 54' of the second support body. Department 108745.doc ·27·

Claims (1)

1325^23⁄4 095105417 Patent Application Chinese Patent Application Range Replacement (January 99) < β X. Patent Application Range: 1. A method of manufacturing a semiconductor device, characterized in that it comprises the following steps: When the support is mounted on the surface side of the substrate, the substrate is thinned from the back side thereof, the first support is unloaded from the substrate, and the second support having the opening is mounted on the back side of the substrate. Before or after the second support is mounted, a through hole that is connected to the second support by σ op is formed on the substrate, an insulating film is formed inside the through hole, and a conductive body is filled in the through hole of the substrate. 2. A method of manufacturing a semiconductor device, comprising the steps of: mounting a first support on a surface side of a substrate, thinning the substrate from a back side thereof, and detaching the first support from the substrate; A second support having an opening is mounted on the back surface side of the substrate, a first insulating film is formed on the surface of the substrate, and a through hole connected to the opening of the second support is formed in the substrate, and a second hole is formed in the through hole of the substrate. The insulating film is filled with a conductor inside the through hole of the substrate. A method of manufacturing a semiconductor device, comprising the steps of: mounting a first support on a surface side of a substrate, thinning the substrate from a back side thereof, and removing the first support from the substrate, having an opening The second support is mounted on the back side of the substrate, and the opening is larger than the through hole formed in the substrate; a first insulating film is formed on the surface of the substrate, and the substrate is formed to be connected to the opening of the second support. The through hole 'forming a trench on the back surface of the substrate is opened in the trench and the through hole of the substrate> into a first insulating film 'filling the inside of the trench and the via hole of the substrate>> 108745-990125.doc 1325627 - A method of manufacturing a semiconductor device, comprising the steps of: mounting a first support on a surface side of a substrate, thinning the substrate from a back side thereof, and detaching the first support from the substrate a second support having an opening π is mounted on the back side of the substrate, and a through hole connected to the opening of the second support is formed on the substrate, and is formed on the surface of the substrate and the through hole. Border membranes in the interior of the through-hole filled with the conductive material of the substrate. The method of any one of claims 1 to 4, further comprising the step of: forming a circuit element portion on a surface side of the substrate before mounting the first support. 6. The method of any one of claims 1 to 4, wherein the first and second support systems comprise a stone stalker. The method of any one of claims 1 to 4, wherein the thinning of the substrate is performed by back grinding of the substrate. 8. The method of any of the preceding claims, wherein the thinning of the substrate is such that the thickness of the substrate is 30 to 1 〇〇 μηι. The method of claim 1, 2 or 4, wherein the through hole of the substrate is smaller than an opening of the second support. The method of any one of the items 1 to 4, wherein the through hole of the substrate is formed by forming a photoresist pattern on a surface side of the substrate, and the photoresist pattern is used as a mask The substrate is formed by etching. U. The method of claim 1, 2 or 4, wherein the through-hole of the substrate is formed by etching the substrate with the first support as a mask. 12. The method of claim 3, wherein the trench on the back side of the substrate is formed by etching the substrate with the first support as a mask. I08745-990125.doc -2- 1325627 t ~ · ' 13. 14. 15. 16. 17. The method of any one of claims 1 to 4 wherein the filling of the electrical conductor is carried out by: A conductor seed layer is formed inside the through hole. The layer is filled with the layer by an electrolytic clock method. The method of claim 13 wherein the conductive system is composed of copper or a copper-containing alloy. The method of claim 13 wherein the thickness of the seed layer of the conductor is a thickness of the monoatomic layer of ~200 nm. The method of claim 13, the layer, the layer of the crystal layer of the m book m conductor is blocked by a barrier layer Formed inside the through-hole. As in the method of claim 16, Ganshan "the barrier layer contains TiN or TaN. 108745-990125.doc