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TW200701428A - Semiconductor device manufacturing method and semiconductor device - Google Patents

Semiconductor device manufacturing method and semiconductor device

Info

Publication number
TW200701428A
TW200701428A TW095105417A TW95105417A TW200701428A TW 200701428 A TW200701428 A TW 200701428A TW 095105417 A TW095105417 A TW 095105417A TW 95105417 A TW95105417 A TW 95105417A TW 200701428 A TW200701428 A TW 200701428A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
substrate
supporting body
device manufacturing
penetrating hole
Prior art date
Application number
TW095105417A
Other languages
Chinese (zh)
Other versions
TWI325627B (en
Inventor
Hiroaki Nakashima
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200701428A publication Critical patent/TW200701428A/en
Application granted granted Critical
Publication of TWI325627B publication Critical patent/TWI325627B/zh

Links

Classifications

    • H10W20/023—
    • H10W20/0238—
    • H10W20/0249—
    • H10W20/0261—
    • H10W20/20—
    • H10W20/2125—
    • H10W90/00—
    • H10W72/221—
    • H10W90/297—
    • H10W90/722—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)

Abstract

A semiconductor device manufacturing method by which a penetrating electrode is formed by surely applying a conductor by a simple method. The semiconductor device manufacturing method is characterized in that the method is provided with a step wherein a substrate is thinned from its rear plane in a status where a first supporting body is attached on a substrate front plane, the first supporting body is removed from the substrate, a second supporting body having an opening section is mounted on the substrate rear plane, a penetrating hole connected to the opening section of the second supporting body is formed on the substrate prior to or after mounting of the second supporting body, an insulating film is formed in the penetrating hole section, and the penetrating hole of the substrate is filled with the conductor.
TW095105417A 2005-02-17 2006-02-17 Semiconductor device manufacturing method and semiconductor device TW200701428A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005040556A JP3880602B2 (en) 2005-02-17 2005-02-17 Semiconductor device manufacturing method, semiconductor device

Publications (2)

Publication Number Publication Date
TW200701428A true TW200701428A (en) 2007-01-01
TWI325627B TWI325627B (en) 2010-06-01

Family

ID=36916365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105417A TW200701428A (en) 2005-02-17 2006-02-17 Semiconductor device manufacturing method and semiconductor device

Country Status (4)

Country Link
JP (1) JP3880602B2 (en)
CN (1) CN101120438B (en)
TW (1) TW200701428A (en)
WO (1) WO2006087957A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423313B (en) * 2009-08-14 2014-01-11 台灣積體電路製造股份有限公司 Semiconductor device manufacturing method

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5478009B2 (en) 2007-11-09 2014-04-23 株式会社フジクラ Manufacturing method of semiconductor package
JP5138395B2 (en) 2008-01-22 2013-02-06 新光電気工業株式会社 Wiring board and manufacturing method thereof
JP5142862B2 (en) * 2008-07-10 2013-02-13 新光電気工業株式会社 Wiring board manufacturing method
US20110042803A1 (en) * 2009-08-24 2011-02-24 Chen-Fu Chu Method For Fabricating A Through Interconnect On A Semiconductor Substrate
KR101604607B1 (en) * 2009-10-26 2016-03-18 삼성전자주식회사 Semiconductor device and method of manufacturing the semiconductor device
CN102120561B (en) * 2010-01-08 2012-07-11 中芯国际集成电路制造(上海)有限公司 Method for forming wafer through hole
KR101185690B1 (en) 2011-08-02 2012-09-24 성균관대학교산학협력단 Method of processing a substrate
CN103258790A (en) * 2013-04-27 2013-08-21 江阴长电先进封装有限公司 Method for revealing inner metal of silicon through holes
JP5827277B2 (en) * 2013-08-02 2015-12-02 株式会社岡本工作機械製作所 Manufacturing method of semiconductor device
CN103441150B (en) * 2013-08-09 2016-03-02 如皋市晟太电子有限公司 A kind of applicable constant current tube simplifying encapsulation
JP6458429B2 (en) * 2014-09-30 2019-01-30 大日本印刷株式会社 Conductive material filled through electrode substrate and method for manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319821A (en) * 2003-04-17 2004-11-11 Sharp Corp Method for manufacturing semiconductor device
JP2004327910A (en) * 2003-04-28 2004-11-18 Sharp Corp Semiconductor device and method of manufacturing the same
JP2005026405A (en) * 2003-07-01 2005-01-27 Sharp Corp Through electrode structure and manufacturing method thereof, semiconductor chip and multichip semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI423313B (en) * 2009-08-14 2014-01-11 台灣積體電路製造股份有限公司 Semiconductor device manufacturing method
US8859424B2 (en) 2009-08-14 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer carrier and method of manufacturing
US9786540B2 (en) 2009-08-14 2017-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US10522382B2 (en) 2009-08-14 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
CN101120438A (en) 2008-02-06
TWI325627B (en) 2010-06-01
JP2006228947A (en) 2006-08-31
WO2006087957A1 (en) 2006-08-24
CN101120438B (en) 2010-05-26
JP3880602B2 (en) 2007-02-14

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