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TWI320606B - A method for making a light emitting diode by electroless plating - Google Patents

A method for making a light emitting diode by electroless plating

Info

Publication number
TWI320606B
TWI320606B TW095128980A TW95128980A TWI320606B TW I320606 B TWI320606 B TW I320606B TW 095128980 A TW095128980 A TW 095128980A TW 95128980 A TW95128980 A TW 95128980A TW I320606 B TWI320606 B TW I320606B
Authority
TW
Taiwan
Prior art keywords
making
light emitting
emitting diode
electroless plating
electroless
Prior art date
Application number
TW095128980A
Other languages
English (en)
Other versions
TW200810146A (en
Inventor
Chia Ming Chuang
Yu Heng Shao
Liang Sheng Chi
Yu Chieh Huang
Tai Chan Huo
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW095128980A priority Critical patent/TWI320606B/zh
Priority to US11/890,493 priority patent/US8039279B2/en
Publication of TW200810146A publication Critical patent/TW200810146A/zh
Application granted granted Critical
Publication of TWI320606B publication Critical patent/TWI320606B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
TW095128980A 2006-08-07 2006-08-07 A method for making a light emitting diode by electroless plating TWI320606B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW095128980A TWI320606B (en) 2006-08-07 2006-08-07 A method for making a light emitting diode by electroless plating
US11/890,493 US8039279B2 (en) 2006-08-07 2007-08-07 Method for making a light emitting diode by electroless plating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095128980A TWI320606B (en) 2006-08-07 2006-08-07 A method for making a light emitting diode by electroless plating

Publications (2)

Publication Number Publication Date
TW200810146A TW200810146A (en) 2008-02-16
TWI320606B true TWI320606B (en) 2010-02-11

Family

ID=39029688

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095128980A TWI320606B (en) 2006-08-07 2006-08-07 A method for making a light emitting diode by electroless plating

Country Status (2)

Country Link
US (1) US8039279B2 (zh)
TW (1) TWI320606B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100903103B1 (ko) * 2007-12-05 2009-06-16 우리엘에스티 주식회사 화합물 반도체를 이용한 발광소자
DE102008035254A1 (de) * 2008-07-29 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Bauteil
CN102376863A (zh) * 2010-08-06 2012-03-14 晶元光电股份有限公司 发光元件的制造方法
CN104718604B (zh) * 2012-10-23 2017-06-30 富士电机株式会社 半导体装置的制造方法
DE102012111245A1 (de) * 2012-11-21 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Anschlussbereichs eines optoelektronischen Halbleiterchips

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1231300B1 (en) 1999-07-26 2007-02-07 Tokyo Electron Limited Plating method and device, and plating system
US7010854B2 (en) * 2002-04-10 2006-03-14 Formfactor, Inc. Re-assembly process for MEMS structures
US20040096592A1 (en) * 2002-11-19 2004-05-20 Chebiam Ramanan V. Electroless cobalt plating solution and plating techniques
US7291513B2 (en) * 2003-12-15 2007-11-06 Dalsa Semiconductor Inc. Hermetic wafer-level packaging for MEMS devices with low-temperature metallurgy
US7209290B2 (en) * 2004-05-25 2007-04-24 Samsung Electro-Mechanics Co., Ltd. Diffractive thin-film piezoelectric micromirror and method of producing the same
TWM277111U (en) 2004-06-18 2005-10-01 Super Nova Optoelectronics Cor Vertical electrode structure for white-light LED
JP2006253298A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体発光素子及び半導体発光装置
US20070108459A1 (en) * 2005-04-15 2007-05-17 Enfocus Engineering Corp Methods of Manufacturing Light Emitting Devices
US20060278979A1 (en) * 2005-06-09 2006-12-14 Intel Corporation Die stacking recessed pad wafer design
TWI270222B (en) * 2005-10-07 2007-01-01 Formosa Epitaxy Inc Light emitting diode chip
TWI279934B (en) 2005-11-22 2007-04-21 Yaki Ind Co Ltd Method for fabricating metal layer of diode with electroless plating
TW200801232A (en) 2006-06-23 2008-01-01 Yaki Ind Co Ltd Method for manufacturing diodes metallic film
US20080001537A1 (en) * 2006-06-28 2008-01-03 Tpo Displays Corp. System for displaying images

Also Published As

Publication number Publication date
US8039279B2 (en) 2011-10-18
US20080032434A1 (en) 2008-02-07
TW200810146A (en) 2008-02-16

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