TWI320601B - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TWI320601B TWI320601B TW095137685A TW95137685A TWI320601B TW I320601 B TWI320601 B TW I320601B TW 095137685 A TW095137685 A TW 095137685A TW 95137685 A TW95137685 A TW 95137685A TW I320601 B TWI320601 B TW I320601B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006188339A JP5036234B2 (ja) | 2006-07-07 | 2006-07-07 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200805650A TW200805650A (en) | 2008-01-16 |
| TWI320601B true TWI320601B (en) | 2010-02-11 |
Family
ID=38508623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095137685A TWI320601B (en) | 2006-07-07 | 2006-10-13 | Semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US7745906B2 (zh) |
| JP (1) | JP5036234B2 (zh) |
| KR (1) | KR100816409B1 (zh) |
| CN (1) | CN100550417C (zh) |
| DE (1) | DE102006062077B4 (zh) |
| TW (1) | TWI320601B (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010192833A (ja) * | 2009-02-20 | 2010-09-02 | Panasonic Corp | 半導体装置 |
| JP2011049393A (ja) * | 2009-08-27 | 2011-03-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| CN102263127B (zh) * | 2010-05-29 | 2013-06-19 | 比亚迪股份有限公司 | 一种mos型功率器件及其制造方法 |
| CN102760759B (zh) * | 2011-04-29 | 2016-02-03 | 比亚迪股份有限公司 | 一种半导体功率器件 |
| EP2763178B1 (en) * | 2011-09-28 | 2021-03-24 | Denso Corporation | Igbt and manufacturing method therefor |
| JP2014212252A (ja) * | 2013-04-19 | 2014-11-13 | 株式会社東芝 | 半導体装置 |
| CN104934466B (zh) * | 2015-06-01 | 2017-12-05 | 南京邮电大学 | 一种阳极抬高的ligbt器件及制造方法 |
| CN107170816B (zh) * | 2017-05-11 | 2019-08-02 | 电子科技大学 | 一种横向绝缘栅双极型晶体管 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
| JPH0783112B2 (ja) * | 1985-01-17 | 1995-09-06 | 株式会社東芝 | 導電変調型ｍｏｓｆｅｔ |
| JP2788269B2 (ja) | 1988-02-08 | 1998-08-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
| JPH02312280A (ja) * | 1989-05-26 | 1990-12-27 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ |
| KR910007160B1 (ko) | 1989-07-12 | 1991-09-18 | 주식회사 선경인더스트리 | 방식제조성물 |
| JP2752184B2 (ja) * | 1989-09-11 | 1998-05-18 | 株式会社東芝 | 電力用半導体装置 |
| JP3085037B2 (ja) | 1993-08-18 | 2000-09-04 | 富士電機株式会社 | 絶縁ゲートバイポーラトランジスタ |
| WO1995024055A1 (de) | 1994-03-04 | 1995-09-08 | Siemens Aktiengesellschaft | Mis-struktur auf siliciumcarbid-basis mit hoher latch-up-festigkeit |
| JPH08227999A (ja) * | 1994-12-21 | 1996-09-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法 |
| US5751024A (en) * | 1995-03-14 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
| JP3444061B2 (ja) | 1995-11-24 | 2003-09-08 | 富士電機株式会社 | 高耐圧横型絶縁ゲートバイポーラトランジスタ |
| JP3209091B2 (ja) * | 1996-05-30 | 2001-09-17 | 富士電機株式会社 | 絶縁ゲートバイポーラトランジスタを備えた半導体装置 |
| KR100198995B1 (ko) | 1996-05-30 | 1999-07-01 | 김충환 | 전력 스위칭 소자 |
| US6008518A (en) | 1996-09-06 | 1999-12-28 | Mitsubishi Denki Kabushiki Kaisha | Transistor and method of manufacturing the same |
| JPH10150193A (ja) * | 1996-09-17 | 1998-06-02 | Toshiba Corp | 高耐圧半導体装置 |
| US5869850A (en) * | 1996-12-13 | 1999-02-09 | Kabushiki Kaishia Toshiba | Lateral insulated gate bipolar transistor |
| KR100248503B1 (ko) | 1997-08-06 | 2000-03-15 | 김덕중 | 래치 업을 방지하는 반도체 전력소자 |
| KR100275756B1 (ko) * | 1998-08-27 | 2000-12-15 | 김덕중 | 트렌치 절연 게이트 바이폴라 트랜지스터 |
| JP2000286416A (ja) * | 1999-03-30 | 2000-10-13 | Mitsubishi Electric Corp | マルチチャネル絶縁ゲート型バイポーラトランジスタ |
| TW434900B (en) | 1999-08-24 | 2001-05-16 | Anpec Electronics Corp | Insulated gate bipolar transistor with controllable latch |
| US6191453B1 (en) * | 1999-12-13 | 2001-02-20 | Philips Electronics North America Corporation | Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology |
| JP2002270844A (ja) | 2001-03-07 | 2002-09-20 | Toshiba Corp | 半導体装置及びその製造方法 |
| TWI256724B (en) | 2003-08-06 | 2006-06-11 | Sanyo Electric Co | Semiconductor device |
| KR100533687B1 (ko) | 2004-02-23 | 2005-12-05 | 재단법인서울대학교산학협력재단 | 이중 게이트 트랜지스터 |
-
2006
- 2006-07-07 JP JP2006188339A patent/JP5036234B2/ja active Active
- 2006-10-13 TW TW095137685A patent/TWI320601B/zh active
- 2006-10-17 US US11/550,189 patent/US7745906B2/en active Active
- 2006-12-29 DE DE102006062077A patent/DE102006062077B4/de active Active
-
2007
- 2007-01-29 KR KR1020070008725A patent/KR100816409B1/ko active Active
- 2007-01-30 CN CNB2007100063424A patent/CN100550417C/zh active Active
-
2010
- 2010-05-12 US US12/778,611 patent/US7902634B2/en active Active
-
2011
- 2011-01-28 US US13/016,164 patent/US8008746B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8008746B2 (en) | 2011-08-30 |
| US20110127575A1 (en) | 2011-06-02 |
| KR100816409B1 (ko) | 2008-03-25 |
| US7902634B2 (en) | 2011-03-08 |
| DE102006062077B4 (de) | 2013-11-28 |
| CN101101923A (zh) | 2008-01-09 |
| US20080006906A1 (en) | 2008-01-10 |
| TW200805650A (en) | 2008-01-16 |
| US7745906B2 (en) | 2010-06-29 |
| US20100219447A1 (en) | 2010-09-02 |
| JP5036234B2 (ja) | 2012-09-26 |
| KR20070074504A (ko) | 2007-07-12 |
| DE102006062077A1 (de) | 2008-01-17 |
| JP2008016731A (ja) | 2008-01-24 |
| CN100550417C (zh) | 2009-10-14 |
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