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TWI319591B - Method to produce semiconductor components and thin-film semiconductor components - Google Patents

Method to produce semiconductor components and thin-film semiconductor components

Info

Publication number
TWI319591B
TWI319591B TW095128566A TW95128566A TWI319591B TW I319591 B TWI319591 B TW I319591B TW 095128566 A TW095128566 A TW 095128566A TW 95128566 A TW95128566 A TW 95128566A TW I319591 B TWI319591 B TW I319591B
Authority
TW
Taiwan
Prior art keywords
semiconductor components
layer
thin
produce
carrier layer
Prior art date
Application number
TW095128566A
Other languages
English (en)
Other versions
TW200746231A (en
Inventor
Siegfried Herrmann
Berthold Hahn
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200746231A publication Critical patent/TW200746231A/zh
Application granted granted Critical
Publication of TWI319591B publication Critical patent/TWI319591B/zh

Links

Classifications

    • H10P72/74—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10P72/7432—
    • H10W72/325—
    • H10W72/352—
    • H10W72/354—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/884—
    • H10W74/00—
    • H10W90/736—
    • H10W90/756—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

Landscapes

  • Led Device Packages (AREA)
  • Laminated Bodies (AREA)
  • Recrystallisation Techniques (AREA)
TW095128566A 2005-08-05 2006-08-04 Method to produce semiconductor components and thin-film semiconductor components TWI319591B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005037023 2005-08-05
DE102005055293A DE102005055293A1 (de) 2005-08-05 2005-11-21 Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip

Publications (2)

Publication Number Publication Date
TW200746231A TW200746231A (en) 2007-12-16
TWI319591B true TWI319591B (en) 2010-01-11

Family

ID=37135458

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095128566A TWI319591B (en) 2005-08-05 2006-08-04 Method to produce semiconductor components and thin-film semiconductor components

Country Status (8)

Country Link
US (1) US8058147B2 (zh)
EP (1) EP1911104B1 (zh)
JP (1) JP5361381B2 (zh)
KR (1) KR101330455B1 (zh)
CN (1) CN101238593B (zh)
DE (1) DE102005055293A1 (zh)
TW (1) TWI319591B (zh)
WO (1) WO2007016908A1 (zh)

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Publication number Priority date Publication date Assignee Title
DE102005055293A1 (de) 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
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DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
DE102007017113A1 (de) 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007010755A1 (de) 2007-03-06 2008-10-30 Osram Opto Semiconductors Gmbh Anordnung mit einem Halbleiterchip und einer Lichtleiterschicht
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
DE102007041896A1 (de) 2007-09-04 2009-03-05 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007053286B4 (de) 2007-09-20 2025-03-27 Osram Oled Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102007051168B4 (de) * 2007-09-26 2026-01-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines LED-Moduls und Modul
DE102007054800B4 (de) 2007-09-28 2024-12-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lumineszenzdiodenchip mit Lumineszenzkonversionsvorrichtung und Verfahren zum Herstellen von Lumineszenzdiodenchips mit Lumineszenzkonversionsvorrichtung
DE102008005935A1 (de) 2007-11-29 2009-06-04 Osram Opto Semiconductors Gmbh Halbleiteranordnung sowie Verfahren zur Herstellung einer Halbleiteranordnung
DE102008008599A1 (de) * 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Halbleiteranordnung, insbesondere Leuchtdiodenanordnung und Leuchtmittelanordnung
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Also Published As

Publication number Publication date
EP1911104A1 (de) 2008-04-16
DE102005055293A1 (de) 2007-02-15
JP2009503878A (ja) 2009-01-29
EP1911104B1 (de) 2019-05-15
CN101238593A (zh) 2008-08-06
TW200746231A (en) 2007-12-16
US8058147B2 (en) 2011-11-15
KR101330455B1 (ko) 2013-11-15
CN101238593B (zh) 2010-05-26
US20100133564A1 (en) 2010-06-03
WO2007016908A1 (de) 2007-02-15
KR20080035679A (ko) 2008-04-23
JP5361381B2 (ja) 2013-12-04

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