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TWI311768B
TWI311768B TW92118619A TW92118619A TWI311768B TW I311768 B TWI311768 B TW I311768B TW 92118619 A TW92118619 A TW 92118619A TW 92118619 A TW92118619 A TW 92118619A TW I311768 B TWI311768 B TW I311768B
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composition
component
temperature
dielectric
ultra
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TW92118619A
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TW200502993A (en
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Chien Chi Lin
Chung Ya Tsao
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Prosperity Dielectrics Co Ltd
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Description

修正 ^11768 ^ '^ ---ΜΆ 9211861Q_年月 五、發明説明(1) 【發明所屬之技術領域】 本發明係一種超低溫燒成系介電瓷粉組成物,可供用 來製造溫度補償型的積層陶瓷電容器。本發明更適合供電 子工業協會(Eiectronic Industry Association,簡稱 t I. A.)所規定之溫度係數為NP〇規格所採用,亦即電容 器在-55t〜125。(:之間,其電容值的溫度係數(1/C) (△ 〔/△T)須在〇±30ppm/°C之範圍内。 【先前技術】 —一般陶瓷電容器依其瓷粉組成的介電常數高低可分成 三類:高介電常數型(Hi-Κ),中介電常數型(Mid_K )及W度補償型(TC)。高介電常數型其介電常數達4〇〇〇 〜1 5000 ’但其值隨溫度變化而變化很大。中介電常數型 =介電承數約1400〜3000,介電常數隨溫度的變化較小但 常是非線性。溫度補償型的介電常數約8〜丨〇 〇,介電常數 隨溫度的變化最小且常是線性的變化。 積層陶瓷電容器的内電極和陶瓷介電層須一起共燒, 因此常見商品化之積層陶瓷電容器之瓷粉組成依燒成溫度 可概分為高溫燒成系與低溫燒成系兩種,高溫燒成系之燒 成A度約在1 2 5 0 °C〜1 3 0 0 t:,因其燒成溫度較高,故其内 電極一般需採用熔點較高,且價格昂貴的鈀(pd )系貴金 屬°低溫燒成系由於燒成溫度在11 5 0 t以下,故其内電極 可採用價格便宜’銀含量較高之銀鈀合金金屬(Ag/pd ) 來降低成本而較經濟。 ~般溫度補償型電容器瓷粉組成的介電常數雖約在8 100 ^ ’但現行技術在製造1 〇〇pF以下的低電容值npo積MODIFICATION ^11768 ^ '^ ---ΜΆ 9211861Q_年月五, invention description (1) Technical Field of the Invention The present invention relates to a composition of ultra-low temperature firing dielectric ceramic powder, which can be used for manufacturing temperature compensation type. Multilayer ceramic capacitors. The invention is more suitable for use in the EiCtronic Industry Association (referred to as t I. A.), and the temperature coefficient is NP〇, that is, the capacitor is at -55t~125. (Between: the temperature coefficient of the capacitance value (1/C) (△ [/ △ T) shall be within the range of 〇 ± 30ppm / ° C. [Prior Art] - the general ceramic capacitor is based on the composition of its porcelain powder The electrical constants can be divided into three categories: high dielectric constant type (Hi-Κ), dielectric constant type (Mid_K) and W degree compensation type (TC). High dielectric constant type has a dielectric constant of 4 〇〇〇~ 1 5000 'but its value varies greatly with temperature. The dielectric constant type = dielectric capacity is about 1400~3000, and the dielectric constant changes little with temperature but is often nonlinear. The dielectric constant of temperature compensation type is about 8~丨〇〇, the change of dielectric constant with temperature is the smallest and often linear change. The internal electrode of the multilayer ceramic capacitor and the ceramic dielectric layer must be co-fired together, so the ceramic powder composition of the common commercial multilayer ceramic capacitor is The firing temperature can be divided into two types: high temperature firing system and low temperature firing system. The firing degree of high temperature firing system is about 1 250 ° C ~ 1 3 0 0 t: because of the firing temperature. High, so the internal electrode generally needs to use a high melting point, and expensive palladium (pd) noble metal ° low temperature firing Since the firing temperature is below 1 150 t, the internal electrode can be reduced in cost by using a cheap silver-palladium alloy metal (Ag/pd) with a high silver content. The dielectric constant is about 8 100 ^ ', but the current technology is manufacturing a low capacitance npo product below 1 〇〇pF.

1311768 ----------------年月日 修正____ 五、發明說明(2) 層陶究電容器時’若瓷粉的介電常數較高,因積層層數較 少’常因製程控制不易,陶瓷電容的電容值常偏離規格值 以致良率偏低;若選用介電常數較低的瓷粉,則因積層層 數較多’耗用銀把内電極較多,以致内電極材料成本提 高’因此現行製造10 OpF以下的積層陶瓷電容器常選用介 電常數為15〜45的瓷粉來製造,以求得最適經濟生產。 一般低溫燒成系介電瓷粉組成,通常是用高溫燒成的 主成份再添加各種燒結助劑(Sintering aid),諸如玻 璃(glass),玻璃、熔塊(frit)或助熔劑(fiux)等以 降低燒成溫度,一般此玻璃或玻璃熔塊皆含Pb或Cd或Bi等 低熔點成份。而Pb、Cd為對環境生態有害物質,因應環保 潮流,開發出不含Pb、Cd之介電瓷粉組成有其必要性。 【發明内容】 關於低溫燒成系溫度補償型陶瓷電容器組成物,美國 發明專利第4,506,026號所揭示一種由主成份^〇-(^〇-]^〇 2-Al2 03 -Si02-Nb2 05 和副成份Pb0-Bi2 03 -Cd0-Zn0-Si02-B2 03 玻 璃及第5, 599, 757號所揭示一種由主成份Ba0-Ti02-Zr02 -Si02 和副成份Pb0-Ti02-Zr02-Al2 03 -LiF-Si02-B2 03 玻璃所構 成的組成物’符合E. I · A的N P 0規格要求,但其燒成溫度都 須在11 0 0 °C以上且瓷粉組成都含Pb或Cd之對環境有害物 質。因此燒成溫度為l〇〇〇°C以下’及以BaO-Zn〇-Nb2〇5-Ti〇2 為主成份添加N t>2 〇5 - S i 〇2 - Μ η 0 - Ζ η 0 - Bz 〇3熔塊副成份之不含 Pb、Cd、Bi之積層陶瓷電容器瓷粉組成尚未出現。 本發明選用適當主成份系統’添加不含Pb、Cd之燒結1311768 ---------------- Year, month and day correction ____ V. Invention description (2) When the layer of ceramic capacitors is used, if the dielectric constant of porcelain powder is higher, due to the number of layers Less often because process control is not easy, the capacitance value of ceramic capacitor often deviates from the specification value, so that the yield is low; if the ceramic powder with lower dielectric constant is used, the number of layers is higher. There are many, so that the cost of the internal electrode material is increased. Therefore, the current production of multilayer ceramic capacitors of 10 OpF or less is usually made of porcelain powder having a dielectric constant of 15 to 45, in order to obtain optimum economical production. Generally, low-temperature firing is a composition of dielectric porcelain powder, usually with a main component fired at a high temperature and then added various sintering aids such as glass, glass, frit or flux. In order to lower the firing temperature, generally the glass or glass frit contains a low melting point component such as Pb or Cd or Bi. Pb and Cd are harmful substances to the environment and ecology. In response to the trend of environmental protection, it is necessary to develop a dielectric powder composition containing no Pb or Cd. SUMMARY OF THE INVENTION A composition of a low-temperature-fired temperature-compensated ceramic capacitor is disclosed in U.S. Patent No. 4,506,026, the disclosure of which is incorporated herein by reference. The composition Pb0-Bi2 03 -Cd0-Zn0-Si02-B2 03 glass and the main component Ba0-Ti02-Zr02-Si02 and the subcomponent Pb0-Ti02-Zr02-Al2 03 -LiF- disclosed in No. 5, 599, 757 The composition of the Si02-B2 03 glass meets the NP 0 specification of E. I · A, but the firing temperature must be above 110 ° C and the composition of the porcelain powder contains Pb or Cd which is harmful to the environment. Therefore, the firing temperature is below 10 °C and adding BaO-Zn〇-Nb2〇5-Ti〇2 as the main component to add N t>2 〇5 - S i 〇2 - Μ η 0 - Ζ The composition of the ceramic powder of the multilayer ceramic capacitor containing no Pb, Cd or Bi of the η 0 - Bz 〇3 frit component has not yet appeared. The invention selects the appropriate principal component system to add the sintering without Pb and Cd.

第6頁 1311768Page 6 1311768

案號 92118619 五、發明說明(3) 助劑將燒結溫度降低至1 〇〇〇 以下,而可適用較 7〇%Ag/3〇%Pd更價廉的9〇%Ag/10%Pd之内電極而降低成本來 製造更經濟的積層陶瓷電容器。 本發明之目的即在開發一種能在丨0〇〇它超低溫燒成之 積層陶瓷電容器組成,且不含鉛、鎘、鉍等成份,而苴電 氣特性之介電常數可達35〜45以上,q值為1〇〇〇以上/溫 度係數符合E. I.A.之ΝΡ0規格,即〇± 30ppm/t以内,適合 於供製造溫度補償型積層陶瓷電容器使用之介電瓷粉組 成。 為達上述之目的,本發明有關之超低溫燒成系積層陶 莞電谷器之介電瓷粉組成由1〇〇重量份之具有26.Case No. 92218619 V. Description of the invention (3) The auxiliary agent reduces the sintering temperature to less than 1 ,, and can be applied within 9〇% Ag/10% Pd which is cheaper than 7〇%Ag/3〇%Pd. Electrodes reduce costs to make more economical multilayer ceramic capacitors. The object of the present invention is to develop a laminated ceramic capacitor which can be fired at a low temperature in 丨0〇〇, and does not contain lead, cadmium, tellurium and the like, and the dielectric constant of the electrical property can reach 35 to 45 or more. The q value is more than 1〇〇〇/the temperature coefficient is in accordance with EIA's ΝΡ0 specification, ie 〇±30ppm/t, which is suitable for the dielectric porcelain powder used in the manufacture of temperature-compensated multilayer ceramic capacitors. For the purpose of the above, the composition of the dielectric porcelain powder of the ultra-low-temperature firing layered ceramic electric grid of the present invention is composed of 1 part by weight.

$33.0%,1.5%SZnO$12.0%,0.5%SNb205 $6.0%,54.0% STi〇2$65.0%組成之第一成份’與0.5〜16重量份由玻璃炫 塊(f r i t )所組成的第二成份加以配合組成,其中玻璃熔 塊(frit )之組成為〇 $Nb2 05 $10%,0% $Si02 $10%,0% S$33.0%, 1.5% SZnO$12.0%, 0.5% SNb205 $6.0%, 54.0% STi〇2$65.0% consisting of the first component 'combined with 0.5 to 16 parts by weight of the second component consisting of frit , wherein the composition of the glass frit is 〇$Nb2 05 $10%, 0% $Si02 $10%, 0% S

MnO $10%,30% SZnO $8 0%,2 0% SB2〇3 $6 0%。 依以上之組成範圍,係以Ba4Ti13〇3Q,BaTi4 09,Ba2Ti90 2〇等為主成份添加f r i t來共同作用降低燒結溫度至1 〇 〇 〇 °c 以下’並提高燒結體緻密性。控制不同的Ba4Tii3〇3Q,BaTi 4〇9 ’ Ba2Ti9 02Q的含量比例,可調整電容量溫度係數;添加 玻璃熔塊可提高燒結密度,提昇絕緣電阻。 為進一步揭示本案之技術内容,請參閱以下之實施 例: 【實施方式】MnO $10%, 30% SZnO $8 0%, 2 0% SB2〇3 $6 0%. According to the above composition range, adding fr i t as a main component of Ba4Ti13〇3Q, BaTi4 09, Ba2Ti90 2〇, etc. to jointly reduce the sintering temperature to below 1 〇 〇 〇 °c and improve the compactness of the sintered body. Control the content ratio of different Ba4Tii3〇3Q, BaTi 4〇9 ’ Ba2Ti9 02Q, and adjust the temperature coefficient of capacitance; adding glass frit can increase the sintering density and improve the insulation resistance. In order to further disclose the technical content of the present case, please refer to the following embodiments: [Embodiment]

第7頁 1311768 案號 92118619__年月日_修正_ 五、發明說明(4) 以B a C 03 (石炭酸銷)’ Ζ η 0 (氧化鋅),N b2 05 (五氧化 二銳),Ti〇2 (氧化鈦)為起始原料,依表(1)中所示之 組成比例秤重,於球磨中濕式混合1 6小時,倒出烘乾後於 窯爐中以1 0 5 0 °C以上高溫煆燒2小時,煆燒料再經粗碎細 磨至1.2/zm以下作為本發明中之第一成份。 第二成份之玻璃溶塊(frit)則以氧化鋅(ZnO)、 五氧化二鈮(Nb2 05 )、碳酸錳(MnC03 )、硼酸(Η3Β03 )、氧化矽(Si02 )為起始原料依〇% $Nb2 05 $ 10%,〇% δPage 7 1311768 Case No. 92181619__年月日日_Amendment_ V. Invention description (4) With B a C 03 (carbonic acid pin) ' Ζ η 0 (zinc oxide), N b2 05 (pentadium oxide), Ti 〇2 (titanium oxide) as the starting material, weighed according to the composition ratio shown in Table (1), wet mixed in ball mill for 16 hours, poured out and dried in the kiln at 1 0 50 ° After calcination for 2 hours at a high temperature of C, the crucible was finely ground to 1.2/zm or less as the first component of the present invention. The second component of the glass frit is based on zinc oxide (ZnO), antimony pentoxide (Nb2 05 ), manganese carbonate (MnC03 ), boric acid (Η3Β03), and cerium oxide (SiO 2 ). $Nb2 05 $ 10%, 〇% δ

Si02 $10% UMnO $10%,3 0% SZnO $8 0%,2 0% SB2〇3 $ 60%的總和1 00 %之配方組成,依比例秤量、混合、烘乾後 於8 0 0 °C煆燒4小時再經粗碎細磨至1. 5 // m以下。 再以表2之重量比例,秤量第一成份及第二成份之 frit於球磨中濕式混合16小時,烘乾後即得最終配方粉。 此配方粉中再添加入20%含有10%聚乙稀醇(polyvinyl alcohol ’即PVA )溶液,予以造粒後,以1. 5Ton/cm2的蜃 力來壓製成直徑l〇mm,厚〇. 5min之圓板形生胚片,於ι〇0〇 °C左右燒結2小時。燒結體兩面燒附電極後,依照下列的 測試條件來測定其電性及燒結密度:即頻率丨MHz,測試電 壓lVrms,測定電容值並計算介電常數e及量測D. F.值 (即,逸因素tan <5 );以直流電壓5 0 0V,充電1分鐘,溫 度25 C ’測定電阻值;以25 t的電容值為基準,測定_55 °C與1 2 5 °C時之電容溫度變化係數;測量燒結體重量及體 積來計算出燒結體密度,並由光學顯微鏡(〇M)來觀察其 顯微:結構’由這些資料來綜合研判組成是否合乎要求。 上·述的試料配方可再進一步製成積層陶瓷電容器,其Si02 $10% UMnO $10%, 3 0% SZnO $8 0%, 2 0% SB2〇3 $ 60% of the total composition of 100%, scaled, mixed, dried and simmered at 80 °C 5小时以下以下。 After 4 hours, finely ground to 1. 5 / m or less. Then, according to the weight ratio of Table 2, the frit of the first component and the second component were weighed and mixed in a ball mill for 16 hours, and the final formula powder was obtained after drying. The formula powder is further added with 20% of a solution containing 10% polyvinyl alcohol (PVA), and after granulation, it is pressed to a diameter of l〇mm, and a thickness of 1.5 mm/cm2. A round plate shaped green sheet of 5 min was sintered at about 10 °C for 2 hours. After the electrodes were sintered on both sides of the sintered body, the electrical properties and the sintered density were measured according to the following test conditions: frequency 丨 MHz, test voltage 1 Vrms, capacitance value measured, dielectric constant e and measured DF value (ie, escape factor) Tan <5 ); measuring the resistance value with a DC voltage of 500 V, charging for 1 minute, temperature 25 C '; measuring the temperature change of the capacitor at _55 °C and 1 2 5 °C with a capacitance value of 25 t Coefficient; the weight and volume of the sintered body were measured to calculate the density of the sintered body, and the microscopic structure of the structure was observed by an optical microscope (〇M): It is judged whether the composition is comprehensively judged by these materials. The sample formulation described above can be further fabricated into a multilayer ceramic capacitor,

第8頁Page 8

1311768 ^ __案號 92118619 五、發明說明(5) 方法如下:對配方粉1 00重量份,添加由聚甲基丙烯酸甲酉旨 10份,丁酮/乙醇溶劑30份,丁基苄基酞酸酯4份等成份所 組成之有機粘結劑’置於球磨機中均勻混合1 6小時,製成 洗注成开> 用瓷漿,再將此瓷漿放入塗佈機,使瓷漿均勻塗 佈於基板上,每次塗佈之介電層膜厚約2〇〜30"^,經8(rc 洪乾後’再印刷内電極材料成份為9〇%Ag/1〇%pd之内電極 層’如此重覆數次達到所需之厚度及層數後,再將此成形 體切割成2. . 〇wmm大小之生胚晶片,此生胚晶片先經低 於5 0 0 °C脫脂處理8〇小時後,於1〇〇〇燒結2小時,燒結後 的晶片大小約為l.6LX0.8wmm,再經外電極燒附後,依:下 f測試條巧:頻率1MHz,測試電壓丨^^,測定df值及電 容值並計算其介電常數e值;以直流電慶50V,充電1分鐘 Ϊ絕緣電阻值;以每秒1〇〇V之速率昇高直流電壓, 測疋。其破壞電壓;以25它之電容值為基準,測定_55。匸盥 1器2 5之溫度變化係數,來完整評估積層陶竟電^ 本實施例結果如表3所示。 格(即-ΙνΜ介。電常數冗〜45 ’電容溫度係、數符合NP0規 ta上)為" 0±3°卿),"值(即散逸因數 U 9f 1以下,絕緣電阻在1X1012 Ω以上,燒社密 標外,-餘二Γ I2人…等試料無法符合本發明之目 如;餘式枓均可符…,故以下就請求範圍之理由1311768 ^ __Case No. 92191619 V. Description of the invention (5) The method is as follows: 10 parts by weight of the formula powder, 10 parts of polymethyl methacrylate forging, 30 parts of methyl ethyl ketone / ethanol solvent, butyl benzyl hydrazine The organic binder consisting of 4 parts of the acid ester is uniformly mixed in a ball mill for 16 hours, and is made into a washing liquid. The porcelain pulp is placed in a coater to make the porcelain pulp. Evenly coated on the substrate, the thickness of the dielectric layer coated each time is about 2〇~30"^, after 8 (after rc is dried, the printed internal electrode material composition is 9〇%Ag/1〇%pd) After the internal electrode layer is repeated several times to the desired thickness and number of layers, the shaped body is cut into 2. 〇wmm size green embryo wafer, which is first degreased at less than 500 °C. After 8 hours of treatment, sintering at 1 2 for 2 hours, the size of the wafer after sintering is about 1.6LX0.8wmm, and after being baked by the external electrode, according to: f test strip: frequency 1MHz, test voltage丨^^, determine the df value and capacitance value and calculate the dielectric constant e value; to DC power 50V, charge 1 minute Ϊ insulation resistance value; at a rate of 1 〇〇V per second DC voltage, 疋 疋 其 其 其 其 其 其 其 其 其 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; 电容 25 25 25 25 Grid (ie - ΙνΜ介. Electrical constant redundancy ~ 45 'capacitance temperature system, number meets NP0 gauge ta) is " 0 ± 3 ° Qing), " value (ie dissipation factor U 9f 1 below, insulation resistance In the case of 1X1012 Ω or more, it is not possible to comply with the purpose of the present invention, and the sample can not meet the requirements of the present invention;

案號 92118619 ΛCase No. 92118619 Λ

1311768 五、發明說明(6) 由試料1所示,當frit = 〇重量份時,D.F值太言 岔度皆較目標值為低,由試料7所示,當fri t = 2〇 = f燒結 時’燒結密度較目標值為低,電容溫度係數偏離 $ h 而frit = l〜15重量份時’均可符合目標值,因此f广值, 添加量範圍為〇. 5% Sfrit蕊16. 〇%。 rit最適 試料8〜25主要係在調整第一成份之Ba〇,Nb 〇 , t率,以尋求最佳範圍’在此範圍中試^ i可2二 目橾之電氣特性,燒結密度,和顯微鏡結構。 』付合 由試料8〜15所示,當Ba〇 = 34.0重量份時或 量份溫度係較偏離目標或有D. F值太高^ Ba〇 2去=.〇重 或Τι〇2 = 65.5重量份時,電容溫度係數偏離目椤值,份 Β·26.8〜32.5重量份時,各項性質皆滿足目;,: 之最適範圍為26.0%$“〇$33.0%,以() ^^,故“〇 54.〇%^Ti〇2^65.0% 〇 叫之最適範圍為 由試料16〜21所示,當Zn0 = 〇重量份時,d f 數皆偏離目標值,當Zn〇 = 12. 6重量份時,、、w痒〆/皿度係 目‘值,當Ζη0=1. 9〜10. 5重量份時,各項性 值,故ZnO之最適範圍為1. 5% $Zn〇 $ 12 〇%。 4 ^ 由試料22~25所示,當Nb2〇5 = 0重量份心:溫度係數 離目標值’當N b2 05 = 6. 7重量份時,、、田*後虹ό 、 ^2 05 = 1.2及4.6重量份時,各項性質皆滿足目標值,故1311768 V. INSTRUCTIONS (6) As shown in sample 1, when frit = 〇 by weight, the DF value is too low to be lower than the target value, as shown by sample 7, when fri t = 2〇 = f is sintered When the sintering density is lower than the target value, the temperature coefficient of the capacitor deviates from $h and the frit = l~15 parts by weight, the target value can be met, so f is wide, and the amount of addition is 〇. 5% Sfrit core 16. 〇 %. Rit optimum sample 8~25 is mainly used to adjust the Ba〇, Nb 〇, t rate of the first component to seek the best range 'in this range, test ^ i can 2 2 橾 electrical properties, sintered density, and microscope structure. 』付付 is shown in samples 8 to 15, when Ba〇 = 34.0 parts by weight or the temperature of the parts is more deviated from the target or has a D. F value too high ^ Ba〇2 goes =. 〇 weight or Τι〇2 = 65.5 When the parts are parts by weight, the temperature coefficient of the capacitance deviates from the target value. When the weight is 26.8~32.5 parts by weight, the properties are all satisfactory; and: the optimum range is 26.0%$"〇$33.0%, to ()^^, “〇54.〇%^Ti〇2^65.0% The optimum range for squeaking is shown in samples 16 to 21. When Zn0 = 〇 by weight, the df number deviates from the target value, when Zn〇 = 12.6 weight 5% 〇 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 〇%. 4 ^ From sample 22~25, when Nb2〇5 = 0 parts by weight: temperature coefficient is lower than the target value' when N b2 05 = 6.7 parts by weight, , Tian * after rainbow trout, ^ 2 05 = 1.2 and 4.6 parts by weight, each property satisfies the target value, so

Nb2〇5 之最適範圍為〇. 5% $Nb2 05 S6. 〇%。 表(1 )試料1 3之第一成份配料比例The optimum range for Nb2〇5 is 〇. 5% $Nb2 05 S6. 〇%. Table (1) Proportion of the first ingredient of sample 1 3

1311768 案號92118619_年月日_ 五、發明說明(7) 願 重畺 重量份⑻ BaCO] 8.62kg BiO 26.8 NbA 0.5Skg NbA 2.3 ΖηΟ 2.00kg ZnO 8.0 TiO, 15.73kg TiO, 629 表(2 )實施例之成份表及測試特性結果 試料 砠成比 第二戎份 龟菊將牷 密JS mt 第一成份(100里里份) (里量份) 介龟常》 D.F 溫度係敏Wn/ t:) 絕餱龟阻 BiO ZnO TiOi 狱 ε % -55C 125Π Ω ^/cm' 1 28 ΰ 2.3 8.4 613 0% 24 1.48 22S 130 107 4.16 本 2 280 2.3 8.4 613 1% 41 0.05 28 >10^ 4.53 3 28 D 2.3 8.4 613 2% 42 0.05 20 25 >\οη 4.53 4 28D 2.3 8.4 613 6% 40 0.05 -] -4 >10^ 4.43 5 289 3.0 7.7 60.4 39 0.05 -23 -34 >10'^ 4.36 6 33D 2.0 9.0 560 15/* 37 0.04 -23 -29 >10η 4.29 7 293 4.6 3.8 623 20% 34 0.04 •73 •S3 >10^ 4.05 本 8 34 JO 1.9 10.1 54 D 6% 36 0.24 52 45 >10'^ 4.39 本 9 33 D 3.9 10.1 530 2% 40 0.07 48 43 >10^ 4.51 本 ·0 325 2.8 9.7 550 6% 38 0.08 26 28 >10^ 4.37 •1 2ZB 2.4 8.6 60.1 6% 38 0.05 25 28 >10。 4.42 :2 2^B 2.3 8.3 616 i〇y〇 38 0.05 -12 -20 >10^ 4.41 :3 26 S 2.3 8.0 629 6% 39 0.04 -13 -30 >10^ 4.4L :4 26 JO 1.9 6.6 655 10/〇 40 0.04 -ΊΒ 45 >10'' 4.40 本 :5 25.1 2.1 7.8 65D 2% 40 0.04 -41 •53 >1015 4.49 氺 it搮記表^在本發明範団之內 表(2 )實施例之成份表及測試特性結果(續)1311768 Case No. 92218619_年月日日_ V. Invention description (7) Heavy weight (8) BaCO] 8.62kg BiO 26.8 NbA 0.5Skg NbA 2.3 ΖηΟ 2.00kg ZnO 8.0 TiO, 15.73kg TiO, 629 Table (2) Implementation Example composition table and test characteristics results sample composition is the second 戎 龟 菊 J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J Absolute Turtle Resistance BiO ZnO TiOi Prison ε % -55C 125Π Ω ^/cm' 1 28 ΰ 2.3 8.4 613 0% 24 1.48 22S 130 107 4.16 This 2 280 2.3 8.4 613 1% 41 0.05 28 >10^ 4.53 3 28 D 2.3 8.4 613 2% 42 0.05 20 25 >\οη 4.53 4 28D 2.3 8.4 613 6% 40 0.05 -] -4 >10^ 4.43 5 289 3.0 7.7 60.4 39 0.05 -23 -34 >10'^ 4.36 6 33D 2.0 9.0 560 15/* 37 0.04 -23 -29 >10η 4.29 7 293 4.6 3.8 623 20% 34 0.04 •73 •S3 >10^ 4.05 Ben 8 34 JO 1.9 10.1 54 D 6% 36 0.24 52 45 >10'^ 4.39 Ben 9 33 D 3.9 10.1 530 2% 40 0.07 48 43 >10^ 4.51 Ben·0 325 2.8 9.7 550 6% 38 0.08 26 28 >10^ 4.37 •1 2ZB 2.4 8.6 60.1 6% 38 0.05 25 28 >104.42 : 2 2^B 2.3 8.3 616 i〇y〇38 0.05 -12 -20 >10^ 4.41 :3 26 S 2.3 8.0 629 6% 39 0.04 -13 -30 >10^ 4.4L :4 26 JO 1.9 6.6 655 10/〇40 0.04 -ΊΒ 45 >10'' 4.40 本:5 25.1 2.1 7.8 65D 2% 40 0.04 -41 •53 >1015 4.49 氺it搮表^ In the scope of the invention ( 2) Example of ingredient list and test characteristics (continued)

第11頁 1311768 案號 92118619 修正 五、發明說明(8) m 講t s二成份 嚇性 _ J*i± 第一碰⑽重謝和 〈重里_分〉 DF 溫度®敎丨ppm/ ΰ) 铕綠奄阻 WtJfa 密s 備註 b4〇 Kb-jOs ZnC ΤιΟί 敁 t % 55Ό ]25C Ω l/cm5 U 325 2.6 0 6SD 2 収 0.:6 41 5C &gt;]〇14 4.23 Π 313 l.S :.9 65D 10 A5 0.Q5 1C 7 &gt;]CT 4.36 IS 30.4 \:j 3.8 64.4 6 A2 0.Q5 3 2C &gt;]〇&quot; 4.41 19 28.7 3.0 6.1 622 10 A2 0.04 -19 8 &gt;]〇'' 4.43 20 273 2.3 10·! 598 6 AQ 0.04 ·% 3 &gt;]〇ls 4.51 2: 26.7 4.2 12 ή 10 舛 0.Q5 •Tj -6S &gt;】0丨4 4.41 22 2S.7 0 62.7 10 Α5 3.S3 \Γδ 65) &gt;]〇|!| 4.34 23 283 1.2 '5 63D 6 Α2 0.06 η 3 &gt;]〇15 4.47 24 25.4 4.6 4.2 619 2 40 0.Q5 1ί -7 &gt;]〇'* 4.47 2S 2^.7 6.^ 6.5 600 6 44 0.04 -75 -4: &gt;]沪 4.43 表(3 )試料3及試料13及試料18製成之積層陶瓷電容器電 氣特性Page 11 1311768 Case No. 92181619 Amendment 5, invention description (8) m ts two components scare _ J*i ± first touch (10) thank you and <heavy _ minute> DF temperature ® 敎丨 ppm / ΰ) 铕 green奄 resistance WtJfa 密 Remarks b4〇Kb-jOs ZnC ΤιΟί 敁t % 55Ό ]25C Ω l/cm5 U 325 2.6 0 6SD 2 Received 0.:6 41 5C &gt;]〇14 4.23 Π 313 lS :.9 65D 10 A5 0.Q5 1C 7 &gt;]CT 4.36 IS 30.4 \:j 3.8 64.4 6 A2 0.Q5 3 2C &gt;]〇&quot; 4.41 19 28.7 3.0 6.1 622 10 A2 0.04 -19 8 &gt;]〇'' 4.43 20 273 2.3 10·! 598 6 AQ 0.04 ·% 3 &gt;]〇ls 4.51 2: 26.7 4.2 12 ή 10 舛0.Q5 •Tj -6S &gt;]0丨4 4.41 22 2S.7 0 62.7 10 Α5 3 .S3 \Γδ 65) &gt;]〇|!| 4.34 23 283 1.2 '5 63D 6 Α2 0.06 η 3 &gt;]〇15 4.47 24 25.4 4.6 4.2 619 2 40 0.Q5 1ί -7 &gt;]〇'* 4.47 2S 2^.7 6.^ 6.5 600 6 44 0.04 -75 -4: &gt;] Shanghai 4.43 Table (3) Electrical properties of laminated ceramic capacitors made of sample 3 and sample 13 and sample 18

!ί難號 3 13 IS mmmm 90Ag/10Pd 90Ag/lQPd 90Ag/10Pd 燒結溫度 100CC lOOOt: lOOOt: 燠後膜原(_) 16 Ί2 16 平肉電容量 20ΡΓ 8pF lDpF D.F 0.03°/c 0.04°/c 0卿 銪緣驅 i.5x 10'Ώ 3x 10'^ 4x 10ΠΩ 溫度保毅(沈&gt; 7ρριη/ΐ^ -2Sppm/,C -12ρριη/ΐ]! 溫度㈣(12冗) -UppiVC -27ppm/'C 4ppm/r: 介甭舖 40 3S 3S 破壞莆壓 2450V 2740V 2120V 第12頁!ί难号 3 13 IS mmmm 90Ag/10Pd 90Ag/lQPd 90Ag/10Pd Sintering temperature 100CC lOOOT: lOOOT: 燠 after film (_) 16 Ί 2 16 flat meat capacity 20ΡΓ 8pF lDpF DF 0.03°/c 0.04°/c 0卿铕缘驱i.5x 10'Ώ 3x 10'^ 4x 10ΠΩ Temperature Baoyi (Sink &gt; 7ρριη/ΐ^ -2Sppm/, C -12ρριη/ΐ]! Temperature (4) (12 redundancy) -UppiVC -27ppm/ 'C 4ppm/r: 甭 甭 40 3S 3S 莆 莆 2450V 2740V 2120V第12页

第13頁Page 13

Claims (1)

1311768 十、申請專利範圍: . _: .... ( ι· 一種超低溫燒成系介電瓷粉組成物,其組成成份由ι00 熏量份如下所示之第一成份26.0% S BaOS 33.0%, 1.5% ^Zn〇^ 12.0% , 0.5%^Nb2O5^ 6.0% &gt; 54.0%^ Ti〇2 客 65.0%與 0.5〜16 重量份之由 〇% $ Nb2〇5 S 10%, 0〇/〇 $ Si〇2 $ ι〇〇/0,〇〇/〇 $ MnO S 10%,30% S ZnO S 80/g ’ 20%$Β2〇3$60%所組成的第二成份之玻璃熔塊 組合而成該介電瓷粉組成物。 2·如申請專利範圍第1項所述之超低溫燒成系介電瓷粉 組成物’其中該第一成份中之各組成成份係以BaC03 (碳S文鋇),ZnO(氧化鋅),Nb205 (五氧化二鈮), Tl〇2 (氧化鈦)為起始原料,於球磨中濕式混合丨6小 時,倒出烘乾後於窯爐中以1〇5〇t以上高溫煆燒2小 時,煆燒料再經粗碎細磨至12#m以下。 3‘如申請專利範圍第1項所述之超低溫燒成系介電竞粉 :成物其中5亥第一成份中之各組成成份依比例軒 匕δ t、乾後於8〇〇 c瑕燒4小時再經粗碎細磨至 1,5 // m以下。 種超低咖燒成系介n粉組成物製成之溫度補償型 積層陶莞電容器,該組成物是由刚重量份由26.0%s 11768 BaOS 33.0%,1.5% S ZnOS 12.0%,0.5% SNb205 S 6.0%,54.0%STiO2S65.0%組成之第一成份與0.5〜16 重量份由 0%SNb2O5S 10%,0%SSiO2S 10%,0%S lyinOS 10%,30%SZnO$80%,20%SB203S60%所組 成的第二成份之玻璃熔塊加以配合的組成物,再添加 有機粘結劑,於球磨機中均勻混合,製成澆注成形用 瓷皱,再使瓷漿均勻塗佈於基板上經烘乾後,再印刷 内電極材料,如此重覆數次達到積層陶瓷電容器所需 的陶瓷結構,經燒結而成的積層陶瓷電容器。 5. 如申請專利範圍第4項所述之超低溫燒成系介電瓷粉 組成物製成之溫度補償型積層陶瓷電容器,其中該有 機粘結劑由聚曱基丙烯酸曱酯,丁酮/乙醇溶劑,丁基 苄基酞酸酯等成份所組成。 6. 如申請專利範圍第4項所述之超低溫燒成系介電瓷粉 組成物製成之溫度補償型積層陶瓷電容器,其中該内 電極材料之成份為含90%Ag/10%Pd之内電極材料。1311768 X. Patent application scope: . _: .... ( ι· A composition of ultra-low temperature firing dielectric porcelain powder, whose composition consists of ι00 smoked as follows. The first component is 26.0% S BaOS 33.0% , 1.5% ^Zn〇^ 12.0% , 0.5%^Nb2O5^ 6.0% &gt; 54.0%^ Ti〇2 Guest 65.0% and 0.5~16 parts by weight $% $ Nb2〇5 S 10%, 0〇/〇 $ Si〇2 $ ι〇〇/0,〇〇/〇$ MnO S 10%, 30% S ZnO S 80/g ' 20%$Β2〇3$60% of the second component of the glass frit combination The composition of the dielectric porcelain powder is as follows: 2. The ultra-low temperature firing dielectric ceramic powder composition as described in claim 1 wherein each component of the first component is BaC03 (carbon S text) ), ZnO (zinc oxide), Nb205 (antimony pentoxide), Tl〇2 (titanium oxide) as the starting material, wet mixing in a ball mill for 6 hours, poured out and dried in a kiln at 1〇 5 〇t above the high temperature simmer for 2 hours, the simmered material is finely ground to 12#m or less. 3' The ultra-low temperature firing system described in the first paragraph of the patent application category is: 6 Each component of the first component of Hai The ratio of Xuanyuan δ t, dried after 8 〇〇c 瑕 burned for 4 hours and then finely ground to less than 1,5 // m. The temperature-compensated type of ultra-low calcined system Laminated ceramic capacitor, the composition is composed of 26.0% s 11768 BaOS 33.0%, 1.5% S ZnOS 12.0%, 0.5% SNb205 S 6.0%, 54.0% STiO2S65.0% first component and 0.5~ 16 parts by weight of a composition of 0% SNb2O5S 10%, 0% SSiO2S 10%, 0% S lyinOS 10%, 30% SZnO $80%, 20% SB203S 60% of the second component of the glass frit, and then The organic binder is added and uniformly mixed in a ball mill to prepare a ceramic wrinkle for casting molding, and then the porcelain slurry is uniformly coated on the substrate and dried, and then the internal electrode material is printed, so that the laminated ceramic capacitor is repeated several times. A ceramic-structured ceramic capacitor having a desired ceramic structure. 5. A temperature-compensated multilayer ceramic capacitor made of a low-temperature firing dielectric dielectric powder composition as described in claim 4, wherein the organic The binder consists of polydecyl methacrylate, butanone/ethanol solvent, butyl benzyl phthalate, etc. 6. A temperature-compensated multilayer ceramic capacitor made of the ultra-low temperature fired dielectric ceramic powder composition according to claim 4, wherein the internal electrode material has a composition of 90% Ag/10 Electrode material within %Pd.
TW092118619A 2003-07-07 2003-07-07 Ultra low firing ceramic dielectric for temperature compensating capacitors TW200502993A (en)

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