JP2010024108A - Dielectric porcelain composition and electronic component produced using it - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric porcelain composition capable of being fired at a low temperature, and an electronic component produced using it. <P>SOLUTION: The dielectric porcelain composition contains 100 mass parts of a (BaNdSm)TiO<SB>3</SB>-based porcelain composition as a main component, and against which 7-17 mass parts of Bi<SB>2</SB>O<SB>3</SB>, 1-5 mass parts of SiO<SB>2</SB>, 1-5 mass parts of ZnO, 0.5-3.5 mass parts of MgO, 0.5-3.0 mass parts of B<SB>2</SB>O<SB>3</SB>, 0.2-1.0 mass parts of Li<SB>2</SB>O and 0.2-1.5 mass parts of CuO are contained. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a dielectric ceramic composition that can be fired at a low temperature and an electronic component manufactured using the dielectric ceramic composition.

  With the recent trend of high-frequency devices such as mobile phones to be downsized, highly functional, and low-priced, parts used in high-frequency devices are also required to be downsized, highly functional, and low-priced. In particular, the dielectric ceramic composition used as a material for these parts has a large relative dielectric constant (K value) of the fired body, a small dielectric loss (tan δ), and a small temperature dependence of capacitance. Is required.

In order to meet this requirement, a (BaNdSm) TiO ₃ -based porcelain composition is used as a main component, while Bi ₂ O ₃ , SiO ₂ , ZnO, B ₂ O ₃ , and optionally MgO and Li ₂ O are contained. A ceramic composition has been proposed (see, for example, Patent Document 1).

  By the way, in general, a dielectric ceramic composition is fired at a high temperature of 1000 ° C. or higher. However, in order to reduce the price of parts using the dielectric ceramic composition, the dielectric ceramic composition is fired at a low temperature. It is important that it is possible. This is because if it can be fired at a low temperature, an expensive high-temperature firing furnace is unnecessary, and in the firing, less electrical energy is required and the burden on the environment can be reduced. In particular, when the dielectric ceramic composition is used for a multilayer ceramic capacitor, it is possible to use inexpensive Ag alone or an Ag alloy instead of expensive noble metals such as Pd, Pt, Au, etc. that have been conventionally used as internal electrodes. It can be expected to make a significant contribution to price reduction. In other words, if the firing temperature can be lowered to, for example, 800 ° C. or lower, the firing temperature becomes 150 ° C. or more lower than the melting point of Ag 962 ° C., so avoid problems such as melting and evaporation of Ag in high-temperature firing. Can do it. Further, at such a low temperature, simultaneous firing with an external electrode becomes easy, and its usefulness is extremely high.

However, the dielectric ceramic composition described in Patent Document 1 is difficult to sinter at a low temperature of 800 ° C. or less, and there is room for improvement with respect to the firing temperature.
JP 2007-55828 A

  An object of the present invention is to provide a dielectric ceramic composition that can be fired at a low temperature and has electrical characteristics suitable for use in a high frequency region, and is produced using such a dielectric ceramic composition. Is to provide an electronic component. In this specification, low temperature baking means baking at a temperature of 800 ° C. or lower.

As a result of diligent investigation, the present inventor has a (BaNdSm) TiO ₃ -based porcelain composition as a main component, and Bi ₂ O ₃ , SiO, ZnO, MgO, B ₂ O ₃ , Li ₂ O, as additive components, The inventors have found that the above problems can be solved by using a dielectric magnetic composition containing CuO in a specific amount, and have completed the present invention.

The present invention is mainly composed of 100 parts by weight of (BaNdSm) TiO ₃ ceramic composition, and 7 to 17 parts by weight of Bi ₂ O ₃ , 1 to 5 parts by weight of SiO _2, 1 to 5 parts by weight of ZnO, Contains 0.5 to 3.5 parts by weight of MgO, 0.5 to 3.0 parts by weight of B ₂ O ₃ , 0.2 to 1.0 parts by weight of Li ₂ O, and 0.2 to 1.5 parts by weight of CuO The present invention relates to a dielectric ceramic composition. The present invention also relates to the above dielectric ceramic composition for low-temperature firing.

  Furthermore, this invention relates to the electronic component produced using said dielectric material ceramic composition. The present invention also provides a multilayer ceramic capacitor having a dielectric layer and an internal electrode layer, wherein the dielectric layer is composed of a fired body of the dielectric ceramic composition, and the internal electrode layer is composed of Ag or an Ag alloy. The present invention relates to a multilayer ceramic capacitor.

ADVANTAGE OF THE INVENTION According to this invention, the dielectric ceramic composition which can be baked at low temperature which has an electrical characteristic suitable for use in a high frequency area | region is provided, and the electron produced using such a dielectric ceramic composition Parts are provided. More specifically, since the dielectric ceramic composition of the present invention can be sintered at a low temperature of 800 ° C. or lower, it can greatly contribute to the cost reduction of electronic parts. In addition, according to the dielectric ceramic composition of the present invention, the K value is 60 or more, the tan δ is 10 × 10 ⁻⁴ or less, and the capacitance at + 25 ° C. even by low-temperature firing at 800 ° C. or less. As a reference, a coefficient of temperature change rate (TC) of capacitance in a temperature range of +25 to + 125 ° C. is within ± 30 ppm / ° C., and a fired body having electrical characteristics suitable for use in a high frequency region is obtained. can get.

  Note that the temperature dependence of the capacitance is generally based on the C0G characteristics by the Electronic Industries Association (EIA). The C0G characteristic is a temperature characteristic in which the TC of the capacitance is flat within ± 30 ppm / ° C. in a wide temperature range of −55 ° C. to + 125 ° C. with reference to the capacitance at + 25 ° C., −55 ° C. to + 25 ° C. is loosely standardized, and what actually becomes a problem is the TC of the electrostatic capacity from + 25 ° C. to + 125 ° C. Therefore, in this specification, TC of capacitance from + 25 ° C. to + 125 ° C. is considered.

The dielectric ceramic composition of the present invention comprises a (BaNdSm) TiO ₃ ceramic composition as a main component, and Bi ₂ O ₃ , SiO ₂ , ZnO, MgO, B ₂ O ₃ , Li ₂ O, CuO as additive components. Containing. Bi ₂ O ₃ , SiO ₂ , and ZnO are components that greatly contribute to the improvement of electrical characteristics, and MgO, B ₂ O ₃ , Li ₂ O, and CuO are components that greatly contribute to the decrease in firing temperature. is there. The dielectric ceramic composition of the present invention may contain Al, Ca, Fe, Sn, etc. as unavoidable impurities.

In the present invention, the (BaNdSm) TiO ₃ -based porcelain composition as the main component is not particularly limited. For example, these raw materials are mixed using BaCO ₃ , TiO ₂ , Nd ₂ O ₃ , and Sm ₂ O ₃ as starting materials. Then, it can be obtained by calcination. However, the starting materials are not limited to those described above, and metal salts such as hydroxides, carbonates, and nitrates that generate oxides by firing can be used. Note that the BaO, usually stable BaCO ₃ is used as a starting material, by calcination, BaO rest of BaCO ₃ and (CO _2), is released as carbon dioxide.

A preferred (BaNdSm) TiO ₃ -based porcelain composition is 18-22 mol% BaCO ₃ , 9-13 mol% Nd ₂ O ₃ , 2-6 mol% Sm ₂ O ₃ , 63-67 mol% TiO ₂ (however, The total of mol% of each component is 100 mol%), these are wet-mixed and dried, then the mixed powder is calcined at around 1170 ° C., and the obtained calcined body is wet-pulverized And dried.

In the present invention, Bi ₂ O ₃ , SiO ₂ , ZnO, MgO, B ₂ O ₃ , Li ₂ O, and CuO as additive components are contained in 100 parts by mass of the main component (BaNdSm) TiO ₃ -based ceramic composition. in _contrast, Bi ₂ O 3 _7~17 parts by, _SiO 2 1 to 5 parts by weight, ZnO 1 to 5 parts by weight, MgO 0.5 to 3.5 parts by _weight, B ₂ O 3 _0.5~3.0 parts by _weight, and Li 2 O 0.2 to 1.0 parts by weight and CuO 0.2 to 1.5 parts by weight. By setting such an amount, the dielectric ceramic composition of the present invention has a K value of 60 or more, tan δ 10 × 10 ⁻⁴ or less, and a capacitance at + 25 ° C. even when subjected to low temperature firing of 800 ° C. or less. As a result, a fired body having a TC within a temperature range of +25 to + 125 ° C. within ± 30 ppm / ° C. can be obtained.

Furthermore, 10 to 17 parts by mass of Bi ₂ O ₃ , _{2 to} 4 parts by mass of SiO ₂ , _{2 to} 4 parts by mass of ZnO, and 1 to 2 parts of MgO 1 to 100 parts by mass of the main component (BaNdSm) TiO ₃ -based ceramic composition. 3 parts by mass, 1 to 2.5 parts by mass of B ₂ O ₃ , 0.4 to 0.8 parts by mass of Li ₂ O, and 0.4 to 1.2 parts by mass of CuO are preferable.

  Next, an electronic component manufactured using the dielectric ceramic composition of the present invention will be described taking a single plate type and a multilayer ceramic capacitor as examples.

First, a main component (BaNdSm) TiO ₃ -based porcelain composition and additive components Bi ₂ O ₃ , SiO ₂ , ZnO, MgO, B ₂ O ₃ , Li ₂ O, and CuO as starting materials, After firing, the mixture is weighed so as to be within the range of the present invention, and wet mixing is performed for a certain time using a grinding medium such as zirconia beads using ethanol or toluene as a medium. At this time, a dispersant can be appropriately used. A ceramic slip is prepared by mixing a binder resin such as polyvinyl butyral (PVB) and a plasticizer such as benzylbutyl phthalate (BBP) with the mixture thus obtained. From this ceramic slip, a sheet is produced by a doctor blade method. In addition, starting materials such as Bi ₂ O ₃ , SiO ₂ , ZnO, MgO, B ₂ O ₃ , Li ₂ O, and CuO are metal salts such as hydroxides, carbonates, and nitrates that generate oxides by firing. It may be used.

  Next, in the case of a single plate capacitor, the obtained sheets are stacked so as to have a desired thickness, and are punched by applying pressure with a mold to obtain a disk-shaped sample. The obtained sample is fired in the air at a predetermined temperature. An Ag paste is printed on both sides of the fired body and baked to form electrodes, thereby producing a single plate type ceramic capacitor. Here, the firing in the atmosphere can be performed at a low temperature of 800 ° C. or less, and examples include a temperature of 750 to 800 ° C. The firing time can be set as appropriate, and can be, for example, 1 to 5 hours. As the Ag paste, it is possible to use an Ag or Ag alloy powder and a glass frit dispersed in a binder resin and a solvent. Cellulose resins such as ethyl cellulose and acrylic resins such as methyl methacrylate can be used as the binder resin, and examples of the solvent include ethyl carbitol, butyl carbitol, terpineol, dihydroterpineol, ethyl cellosolve, butyl cellosolve, petroleum System solvents and mixtures thereof can be used. Additives such as a dispersant can be appropriately added to the Ag paste.

  In the case of a multilayer ceramic capacitor, the internal electrode paste is printed on the sheet obtained as described above. Next, a desired number of sheets are laminated so that the rows from which the internal electrode paste layers are drawn are alternated to obtain a laminate. The obtained laminate is pressed and cut to form a laminate block, which is baked in the air at a predetermined temperature. An external electrode paste is applied to both sides of the lead electrode of the fired body and baked to form an external electrode electrically connected to the internal electrode to obtain a multilayer ceramic capacitor. Here, the firing in the atmosphere can be performed at a low temperature of 800 ° C. or less, and examples include a temperature of 750 to 800 ° C. The firing time can be set as appropriate, and can be, for example, 1 to 5 hours.

  In the above method for producing a multilayer ceramic capacitor, the internal electrode layer and the dielectric layer of the multilayer ceramic capacitor are obtained by simultaneous firing. By using the dielectric ceramic composition of the present invention, simultaneous firing can be performed at a low temperature of 800 ° C. or lower, so that the problem of melting and evaporation of Ag occurs even when the conductive component of the internal electrode paste is Ag or an Ag alloy. Thus, a multilayer ceramic capacitor including a dielectric layer made of a fired body of the dielectric ceramic composition of the present invention and an internal electrode layer made of Ag or an Ag alloy can be obtained. The Ag alloy is not particularly limited as long as it is used in this field. As the internal electrode paste, an Ag or Ag alloy powder dispersed in a binder resin and a solvent can be used. Cellulose resins such as ethyl cellulose and acrylic resins such as methyl methacrylate can be used as the binder resin, and examples of the solvent include ethyl carbitol, butyl carbitol, terpineol, dihydroterpineol, ethyl cellosolve, butyl cellosolve, petroleum System solvents and mixtures thereof can be used. Additives such as a dispersant can be appropriately added to the internal electrode paste.

  In addition, it is convenient to apply an external electrode conductive paste for forming external electrodes and then perform simultaneous firing at a low temperature of 800 ° C. or lower to form internal electrode layers, dielectric layers, and external electrodes. . As the external electrode paste, an Ag or Ag alloy powder and glass frit dispersed in a binder resin and a solvent can be used. Cellulose resins such as ethyl cellulose and acrylic resins such as methyl methacrylate can be used as the binder resin, and examples of the solvent include ethyl carbitol, butyl carbitol, terpineol, dihydroterpineol, ethyl cellosolve, butyl cellosolve, petroleum System solvents and mixtures thereof can be used. Additives such as a dispersant can be appropriately added to the external electrode paste.

  The dielectric ceramic composition of the present invention is not limited to the material of the multilayer ceramic capacitor, but is also useful as a material for various electronic components such as various dielectric resonators used in the high frequency region and dielectric materials for temperature compensation. It is.

  In the following, the present invention will be described in more detail by way of examples. However, this invention is not restrict | limited at all by these Examples.

Example 1 Single Plate Ceramic Capacitor A (BaNdSm) TiO ₃ -based ceramic composition as a main component was prepared as follows. BaCO ₃ , TiO ₂ , Nd ₂ O ₃ , and Sm ₂ O ₃ as starting materials were weighed so as to be 20 mol% BaCO ₃ , 11 mol% Nd ₂ O ₃ , 4 mol% Sm ₂ O ₃ , and 65 mol% TiO ₂ . . These were wet-mixed for 3 hours using water as a medium and zirconia beads as a grinding medium, and then dried. The obtained dried body was calcined at 1170 ° C. for 2 hours, and again wet-mixed for 3 hours using water as a medium and zirconia beads as a grinding medium, and then dried to be the main component (BaNdSm) A TiO ₃ -based porcelain composition was obtained.

The obtained main component (BaNdSm) TiO ₃ -based porcelain composition and Bi ₂ O ₃ , SiO ₂ , ZnO, MgO, B ₂ O ₃ , Li ₂ O and CuO which are starting materials of additive components Weighing so that the composition after firing becomes the target composition shown in Table 1, using a mixture of ethanol and toluene in a mass ratio of 50:50 as a medium, and using zirconia beads as a grinding medium, wet for 16 hours A ceramic slurry was obtained by mixing.

  To the obtained ceramic slurry, 10% by mass of polyvinyl butyral (PVB) resin as a binder resin and 3% by mass of benzylbutyl phthalate (BBP) as a plasticizer were added, and further mixed for 16 hours to obtain a ceramic slip.

  The obtained ceramic slip was formed into a sheet by a doctor blade method, and the medium was volatilized to obtain a ceramic sheet having a thickness of about 40 μm.

25 sheets of the obtained ceramic sheets were stacked and punched and molded at a pressure of 3000 kg / cm ² using a mold of 16.5 mmφ to obtain a disk-shaped sample having a thickness of 1 mm.

  The disk-like sample thus obtained was fired in the air for 2 hours while changing the temperature. The temperature shown in Table 1 is the temperature at which the water absorption rate of the obtained fired body was less than 0.01%. The water absorption is the weight (A) measured by wiping the surface after the fired body is put in water and vacuum degassed to absorb water, and the weight (B) of the dried product at 150 ° C. for 1 hour. Was measured and calculated as ((A)-(B)) / (B) × 100%. In the following, “sintering” means that the water absorption of the obtained fired body is less than 0.01%.

Ag paste was prepared by kneading Ag powder, terpineol, butyl carbitol and butyl carbitol acetate as media, 6% by mass of ethylcellulose and 6% by mass of glass frit with respect to Ag powder. An Ag paste was applied to both sides of a fired body obtained by firing in the air for 2 hours at the temperature shown in Table 1, and baked at 650 ° C. to form an electrode, thereby obtaining a single plate ceramic capacitor. With respect to the obtained single plate type ceramic capacitor, the K value and tan δ were measured using an LCR meter under measurement conditions of 1 kHz and 1 Vrms (effective voltage). In addition, the temperature coefficient TC of the capacitance was calculated from the difference in capacitance at 125 ° C. with reference to the capacitance at + 25 ° C. The target value is 60 or more for K value, 10 × 10 ⁻⁴ or less for tan δ, and within ± 30 ppm / ° C. for TC.

  Table 1 shows the characteristics of the single-plate capacitor obtained as described above, and the x marks indicate comparative examples outside the scope of the present invention.

  Sample Nos. 1 to 6 are obtained by changing the amount of CuO. Sample No. 1 to which no CuO was added was not sintered at a low temperature of 800 ° C. or lower. Sample No. 6 with an addition amount of 2 parts by mass could lower the firing temperature, but dielectric dispersion occurred, and TC and tan δ did not reach the target values. On the other hand, Sample Nos. 2 to 5 having a CuO amount of 0.2 to 1.5 parts by mass were sinterable at 800 ° C. or lower, and all of the K value, TC, and tan δ were good.

Sample Nos. 7 to 13 are obtained by changing the amount of Li ₂ O. Sample No. 7 to which no Li ₂ O was added and Sample No. 8 having an addition amount of 0.1 part by mass were not sintered at a low temperature of 800 ° C. or lower. Moreover, in No. 14 with an addition amount of 1.2 parts by mass, none of the K value, TC, and tan δ reached the target value. On the other hand, Sample Nos. 9 to 13 having an amount of Li ₂ O of 0.2 to 1.0 part by mass could be sintered at 800 ° C. or lower, and all of K value, TC, and tan δ were good.

Sample Nos. 15 to 21 are obtained by changing the amount of B ₂ O ₃ . Sample No. 15 to which B ₂ O _{3 was} not added was not sintered at a low temperature of 800 ° C. or lower. In addition, Sample No. 21, whose added amount was 3.5 parts by mass, was not sintered at a low temperature of 800 ° C. or lower, and none of the K value, TC, and tan δ reached the target value. On the other hand, Sample Nos. 16 to 20 having an amount of B ₂ O ₃ of 0.5 to 3 parts by mass were sinterable at 800 ° C. or lower, and all of the K value, TC, and tan δ were good.

  Sample Nos. 32 to 28 are obtained by changing the amount of MgO. Sample No. 22 to which no MgO was added was not sintered at a low temperature of 800 ° C. or lower. Further, Sample No. 28 having an addition amount of 4 parts by mass was not sintered at a low temperature of 800 ° C. or lower, and tan δ did not reach the target value. On the other hand, Sample Nos. 23 to 27 having an MgO amount of 0.5 to 3.5 parts by mass were capable of being sintered at 800 ° C. or lower, and all of the K value, TC, and tan δ were good.

  Sample Nos. 29 to 33 are obtained by changing the amount of ZnO. Sample No. 29 to which ZnO was not added was not sintered at a low temperature of 800 ° C. or lower. Further, Sample No. 33 having an addition amount of 6 parts by mass also did not sinter at a low temperature of 800 ° C. or lower, and the K value and tan δ did not reach the target values. On the other hand, Sample Nos. 30 to 32 having an addition amount of 1.0 to 5.0 parts by mass were sinterable at 800 ° C. or lower, and all of the K value, TC, and tan δ were good.

Sample Nos. 34 to 38 are obtained by changing the amount of SiO ₂ . Sample No. 34 to which no SiO _{2 was} added was not sintered at a low temperature of 800 ° C. or lower. In addition, Sample No. 38 with an addition amount of 6 parts by mass could lower the firing temperature, but the K value and tan δ did not reach the target values. On the other hand, Sample Nos. 35 to 37 having an addition amount of 1.0 to 5.0 parts by mass were sinterable at 800 ° C. or lower, and all of K value, TC and tan δ were good.

Sample Nos. 39 to 44 are obtained by changing the amount of Bi ₂ O ₃ . Sample No. 39 having an addition amount of 5 parts by mass was not sintered at a low temperature of 800 ° C. or lower. In addition, Sample No. 44 having an addition amount of 19 parts by mass could lower the firing temperature, but tan δ did not reach the target value. On the other hand, Samples No. 40 to No. 43 having an addition amount of 7.0 to 17.0 parts by mass were sinterable at 800 ° C. or lower, and all of the K value, TC, and tan δ were good.

  Sample No. 45 corresponds to Document No. 3 in the example of Patent Document 1: Japanese Patent Application Laid-Open No. 2007-55828, and Samples Nos. 46 to 47 have the ratio of each additive component as it is. Thus, the total of the additive components was increased to 20 parts by mass and 23 parts by mass. Nos. 45 to 47 were sintered at 930 ° C., 890 ° C., and 860 ° C., respectively, and all did not far reach low-temperature firing at 800 ° C. or less. Sample No. 48 corresponds to Document No. 24 in the Examples of Patent Document 1: Japanese Patent Application Laid-Open No. 2007-55828, and Sample Nos. 49 to 50 have the ratio of each additive component as it is. Thus, the total of the additive components was increased to 20 parts by mass and 23 parts by mass. Nos. 48 to 50 were sintered at 930 ° C., 900 ° C., and 870 ° C., respectively, and all did not far reach low-temperature firing at 800 ° C. or less.

According to the above, it is possible to sinter at a low temperature of 800 ° C. or less by containing the additive components Bi ₂ O ₃ , SiO ₂ , ZnO, MgO, B ₂ O ₃ , Li ₂ O and CuO in specific amounts. It can be seen that the K value, TC, and tan δ meet the target values, resulting in excellent electrical characteristics. In particular, for MgO, B ₂ O ₃ , Li ₂ O and CuO, from the comparison of sample Nos. 22 and 23, sample Nos. 15 and 16, sample Nos. 7 and 8 and 9, sample Nos. 1 and 2 Depending on the presence or absence of addition, the influence on the firing temperature is large, and these can be said to be components that greatly contribute to the reduction of the firing temperature. On the other hand, for Bi ₂ O ₃ , SiO ₂ and ZnO, there is a contribution to the improvement in electrical characteristics rather than the comparison with Sample Nos. 39 and 40, Sample Nos. 34 and 35, and Sample Nos. 29 and 30. It can be said that it is a big ingredient.

Example 2: Multilayer ceramic capacitor (1)
A ceramic sheet having a thickness of 11 μm was obtained in the same manner as in Example 1 with the composition of Sample No. 4 in Table 1. Ag powder for internal electrodes was prepared by kneading 6% by mass of ethyl cellulose with Ag powder, terpineol and petroleum solvent as a medium, and Ag powder. An internal electrode Ag paste was printed on the ceramic sheet to form an internal electrode. Eighty ceramic sheets on which internal electrodes were formed were laminated so that the rows from which the internal electrode paste layers were drawn were alternated to obtain a laminate. The obtained laminate was pressed and cut to produce a laminate block.

  Next, the laminated block was fired at 770 ° C. for 2 hours in the air. Ag powder for external electrodes was prepared by kneading Ag powder, terpineol, butyl carbitol and butyl carbitol acetate as media, and 6% by mass of ethyl cellulose and 6% by mass of glass frit with respect to Ag powder. The ceramic paste after firing is coated with an external electrode Ag paste and baked in the atmosphere at 650 ° C. to form an external electrode electrically connected to the internal electrode. Got.

  The outer dimensions of the obtained multilayer ceramic capacitor were 2.0 mm in length, 1.2 mm in width, and 1.2 mm in thickness. The thickness of each dielectric ceramic layer interposed between the internal electrodes was 8 μm, and the total number of effective dielectric ceramic layers was 80 layers.

The electrical characteristics of the obtained multilayer ceramic capacitor were measured in the same manner as in Example 1. As a result, the capacitance was 10,000 pF, tan δ was 2 × 10 ⁻⁴ , and the capacitance at + 25 ° C. was +25. A good TC of -20 ppm / ° C. was obtained at a capacitance of -20 ° C. to + 125 ° C.

Example 3: Ceramic capacitor (2)
The external electrode paste is applied to the lead electrode side of the laminated block before firing in Example 2, and the dielectric layer, the internal electrode layer, and the external electrode layer are simultaneously formed by firing at 770 ° C. for 2 hours in the air. A multilayer ceramic capacitor was obtained by firing.

  The outer dimensions of the obtained multilayer ceramic capacitor were 2.0 mm in length, 1.2 mm in width, and 1.2 mm in thickness. The thickness of each dielectric ceramic layer interposed between the internal electrodes was 8 μm, and the total number of effective dielectric ceramic layers was 80 layers.

The electrical characteristics of the obtained multilayer ceramic capacitor were measured in the same manner as in Example 1. As a result, the capacitance was 10,000 pF, tan δ was 2 × 10 ⁻⁴ , and the capacitance at + 25 ° C. was +25. A good TC of -20 ppm / ° C. was obtained at a capacitance of -20 ° C. to + 125 ° C.

  The dielectric ceramic composition of the present invention can be used as various dielectric resonators used in the high frequency region, dielectric materials for temperature compensation, and multilayer ceramic capacitors.

Claims (5)

(BaNdSm) TiO ₃ -based porcelain composition 100 parts by mass, Bi ₂ O ₃ 7 to 17 parts by mass, SiO ₂ 1 to 5 parts by mass, ZnO 1 to 5 parts by mass, MgO 0.5 Dielectric containing ~ 3.5 parts by mass, B ₂ O ₃ 0.5-3.0 parts by mass, Li ₂ O 0.2-1.0 parts by mass and CuO 0.2-1.5 parts by mass Porcelain composition.   The dielectric ceramic composition according to claim 1, which is for low-temperature firing.   The electronic component produced using the dielectric ceramic composition of Claim 1 or 2.   A multilayer ceramic capacitor comprising a dielectric layer and an internal electrode layer, wherein the dielectric layer is composed of a fired body of the dielectric ceramic composition according to claim 1 or 2, and the internal electrode layer is composed of Ag or an Ag alloy. Multilayer ceramic capacitor.   The multilayer ceramic capacitor according to claim 4, wherein the multilayer ceramic capacitor includes an external electrode layer connected to the internal electrode layer, wherein the dielectric layer, the internal electrode layer, and the external electrode layer are formed by simultaneous firing.