TWI311643B - Unevenness inspecting apparatus and unevenness inspecting method - Google Patents

Description

[Technical Field] The present invention relates to a technique for inspecting a film thickness unevenness (mura) of a film formed on a substrate. [Prior Art] When the film such as a glass substrate or a semiconductor substrate (for (4) cavity ^ "substrate") on the main surface of the display device is used, the film is irradiated with light from the light source and used. The interference from the reflected light of the film examined the film thickness unevenness. For example, Japanese Patent Laid-Open No. 194739=Report discloses a technique for obtaining an interference scene image in (4) by receiving light reflected from a substrate irradiated by a light source, and borrowing an interference image. By performing image processing to check the unevenness of the film thickness on the substrate, by selectively changing the wavelength of the light received by the image capturing portion, the thickness of the film on the substrate is uneven and the film thickness is uneven. The redundancy between the parts is adjusted to the desired size. Further, Japanese Patent No. 3335503 discloses a technique of irradiating light to one main surface side of a self-shielding film in a film thickness unevenness inspection of a light transmittance of a shading mask for a color picture tube. The tone data of the image taken from the other side of the main surface is measured by the median filter, and the smoothed data is obtained, and the standardized data is calculated by dividing the grayscale data by the smoothing resource= The display emphasizes the image of the film thickness unevenness mask to be detected', thereby achieving the simplification of the visual inspection and the improvement of the inspection accuracy. Therefore, the image of the film is obtained by the interference light 312XP/invention specification (supplement)/95-11/95127465 6 1311643 reflected by the film on the substrate of the party, and the film thickness is not detected based on the image. In the case where the intensity of the interference light changes with respect to the film thickness, the sensitivity as a ratio of the intensity variation of the interference light to the film thickness variation also varies depending on the film thickness. Therefore, the thickness of the film on the substrate or the degree of unevenness of the film thickness is affected by the change in sensitivity, and the film thickness unevenness may vary depending on the degree of lightness in the image, and the film may not be inspected with high precision. Uneven thickness. SUMMARY OF THE INVENTION The present invention is suitable for a film thickness unevenness inspection device for inspecting a film thickness unevenness of a film formed on a substrate, and an object thereof is to inspect a film thickness unevenness of a film formed on a substrate with high precision. The film thickness unevenness inspection apparatus according to the present invention includes: a holding portion that holds a light transmissive film substrate on a main surface; a light irradiation portion that irradiates light to the film at a specific incident angle; and a photographing portion that receives light from the light irradiation portion In the light, the interference light of the specific wavelength reflected by the film acquires the original image of the film; and the film thickness unevenness detecting portion changes the sensitivity depending on the film thickness, and the sensitivity is the interference light of a specific wavelength. The ratio of the change in intensity to the change in film thickness is detected as the film thickness unevenness of the original image or the amplitude of the specific spatial band in the image derived from the original image. According to the present invention, it is possible to accurately check the film thickness unevenness by correcting the influence of the sensitivity which varies depending on the film thickness. In a preferred embodiment of the present invention, the film thickness unevenness inspection device further includes a memory portion, and the sensitivity indicating the relationship between the sensitivity and the intensity of the interference light of the specific wavelength is memorable, and the film thickness unevenness detecting portion can be used by Correcting the change in sensitivity with reference to each pixel value and sensitivity information of the original image 312 χ ρ / invention manual (supplement) / 95-11/95127465 7 1311643 ^ Sound: uneven detection of film thickness can be easily corrected for sensitivity change In another preferred embodiment of the present invention, the photographing unit includes a plurality of photographing elements, and the detecting unit can also extract and correspond to each pixel of the original image or the original image. Correction of the influence of the individual sensitive sensitivity of the component, correcting the difference in the output characteristics of the photographic element. Whoever: In other preferred embodiments, the film thickness unevenness inspection device includes the 'It part' memory representation sensitivity and The sensitivity of the relationship between the film thickness and the thickness of the thickness detection unit refers to the thickness and sensitivity of the film on the main surface: the positive sensitivity of the side plate changes (four) ringing - both sides are checked. Better 疋, film thickness unevenness inspection 彳隹 I Jin 彳隹 film thickness measurement section further includes the thickness of the film on the main surface: two: in the form of the film thickness unevenness detection section includes: filter processing The shirt image is processed by a bandpass filter for a specific spatial frequency band; and ##. The original shadow sound after processing by the heartbeat processing unit... The correction of the influence is corrected by changing the contrast emphasis in the X strong fade get on. The present invention is also suitable for inspecting a method for inspecting uneven thickness on a substrate. — 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 [Embodiment] Fig. 1 is a diagram showing the (absolute) reflectance of ruthenium relative to the film thickness (Supplement) / 95-1] / 95127465 8 1311643, which is characterized by a specific photoresist film. (Hereinafter, the glass substrate (hereinafter referred to as "two-dimensional", "moon" brother, which is called "the light of one wavelength is irradiated to the film"), the film of "1" is the wavelength (correctly speaking, it is about half) The central value of the extreme chirp band) The reflectances of the incident light of 55G, 600, and 650 nm are respectively indicated by the lines given the symbols (1), 112, and 113 in Fig. 1. The virtual film on the substrate exists on the substrate. = Fig. 1 is to shoot the human light, the angle S is 60 degrees, the 臈 is folded to h 6 , and the refractive index of the chrome layer is set to (3. 77+4· 8i). Since the calculation technique of the reflectance is known, the description is omitted here. As shown in Fig. 1 and Fig. 7F, it can be seen that the reflectance of the wavelength-+ film is changed with respect to the film thickness, and the change of the reflectance Because the reflected light of the film on the substrate is actually the reflected light of the surface (upper surface) of the film incident on the substrate of the light and the film on the substrate The interference light of the reflected light on the lower surface (that is, the surface of the film and the substrate body). Here, the reflectance of the film on the substrate is the ratio of the intensity of the dry V light to the intensity of the incident light, from FIG. The vertical axis of the medium can be understood as the intensity of the incident light of the interference light for a certain intensity. Hereinafter, the reflectance is performed as the intensity of the interference light when the intensity of the incident light is ? (hereinafter referred to as "relative reflection intensity"). In this case, the relative reflection intensity h may be as shown in the formula (1), and the film thickness is set to d and a specific function is used. Here, as described above, the refractive index of the film on the substrate and the lower layer of the film The refractive index and the incident angle of light are fixed. R(d) (1) Fig. 2 is a graph showing the relative reflection intensity when the film thickness in Fig. 1 is only changed by 311XP/_S^(supplement)/95 -11/95127465 9 1311643 Variation diagram. In Figure 2, the ratio of the relative reflection intensity variation of the interference light to the variation of the film thickness of 1 mn is taken as the sensitivity and is shown on the vertical axis, and the wavelength is 55G, 6GG, 65G nm. The sensitivity of the interference light is represented by the line assigned to the symbols 121, 122, and 123 in Fig. 1, respectively. And Fig. 2, it can be seen that the sensitivity of the arbitrary-wavelength 'in the vicinity of the maximum value of the relative reflection intensity (or reflectance) and the minimum value becomes very small, because the film material obtains a sufficient S/N ratio (signal/miscellaneous) If the film thickness range below the sensitivity = characteristic value is defined as a dead band, there is a dead band with a wide film thickness near the maximum value of the relative reflection intensity, and the thickness range is narrow near the minimum value. In addition, the 'sensitivity' can be set to d as shown in equation (2), and the function f, R, function f, R is used to differentiate the function h in the formula (1) from the film thickness d. .

Sk = | f R(d) I (2) Here, focusing on one wavelength of 55 〇 nm, the relationship between sensitivity and relative reflection intensity will be described. The figure 3 is a diagram illustrating the sensitivity and the relative reflection intensity U. The left side of the upper layer in Fig. 3 indicates the change in sensitivity with respect to the film thickness. The right side of the upper layer indicates the change in sensitivity with respect to the relative reflection intensity, and the film thickness on the right side of the lower layer indicates the change in relative reflection intensity with respect to the film thickness. The two lines of the upper right symbol 13G in FIG. 3 correspond to the left side of each combination of two mountain shapes in the left side of the upper layer in FIG. 3 and the valley portion having a narrow width in the film thickness range. In the right mountain shape (the portion on the right side of the lower layer in Fig. 3 with an increase in film thickness, a portion where the relative reflection intensity decreases, and a portion where the relative reflection intensity increases), the two lines 13 〇 substantially overlap. Moreover, 312XP/invention specification (supplement)/9M 1/95127465 10 1311643 is compared with a plurality of combinations of two mountain shapes in the left side of the upper layer in FIG. 3, and then corresponds to the sensitivity and relative reflection of the left mountain shape respectively. There is almost no difference in the relationship between the intensity f-system and the sensitivity corresponding to the right mountain shape and the relative reflection intensity. Therefore, the relationship between the sensitivity and the relative reflection intensity can be said to be substantially constant depending on the film thickness, and the other wavelengths are also the same. In the meantime, even when compared between wavelengths different from each other, the relationship between sensitivity and relative reflection intensity is substantially the same. Therefore, for example, the upper line of the 2 layers of the right layer of Fig. 3, or the line indicating the average of the lines 13 (), etc., as shown in Fig. 4, indicate the sensitivity and relative reflection intensity in each wavelength. Relationship. In the relationship between the sensitivity and the relative reflection intensity, if the maximum value of the relative reflection intensity is Rkmax and the minimum value is Rkmin, the sensitivity sk when the relative reflection intensity is Rk can be expressed by the specific function fs as Equation (3).

Rk ~ Rkmin, Hereinafter, the film thickness unevenness inspection using the relationship between the above sensitivity and the relative reflection intensity will be described in detail. Fig. 5 is a view showing the configuration of a film thickness unevenness inspection device 1 according to a third embodiment of the present invention. The film thickness unevenness inspection device J is an apparatus for obtaining an image of the pattern forming resist film 92 formed on one of the main faces 91 in a glass substrate 9 for a display device such as a liquid crystal display device, and based on the image Check for uneven film thickness. The film 92 on the substrate 9 is formed by applying a photoresist on the upper surface 91 of the substrate 9. 312XP/Invention Manual (Supplement)/95-11/95127465 11 1311643 Here, the film texture of the film 92 on the substrate 9 is not easy to define, but for example, the vertical and the ^ depend on human vision and are i display devices. As for the assembled parts, the length of the film is approximately h, and the period of the film is from the thickness of several mm to several cm. The thickness of the film is equivalent to one week thickness unevenness, the amplitude range of the change; , the degree of uneven film thickness). In addition, the film is unevenly formed (also corresponds to the thickness variation of the film on the plate 9 corresponding to one display|set of the 'seven panel pattern'! 4 The area of the solid Hr plate does not include the equivalent antisense helper When the distance of the solid cycle is i 1 , the film thickness is uneven. Therefore, the substrate 9 is photographed! Second, the variation does not constitute the shadow of the photographic film 92 on the 攸 y - the amplitude of the spatial band (ie, the month) Qiu μ bb & ~ The special film is uneven in film thickness. As shown in Fig. 5, the film thickness unevenness inspection device has the main surface 91 of the film 92 (hereinafter, referred to as "on" 2, forming ρ, ., the upper surface 91") toward the upper side (the (+ Ζ) side in the figure) holds the substrate 9; the light illuminating portion 3, the light is incident at a specific incident angle to the substrate of the platform 2 The upper film 92; the light receiving unit 4 receives light reflected from the film 92 on the upper surface 91 of the substrate 9 by the light irradiation unit 3; the wavelength switching mechanism 5 is disposed between the substrate 9 and the light receiving unit 4 and switches The wavelength of the light received by the light sheet it 4; the moving mechanism 21, Y 』, 兀..., 耵 4 d, the text early 4 and the wavelength switching mechanism 5; the film thickness is uneven The measuring unit 7 detects the film thickness unevenness of the film 92 based on the intensity distribution of the light received by the light receiving unit 4 (corresponding to the distribution of the region of the upper surface 91). The memory portion 6 'memory film thickness unevenness detecting portion 7 detects the film The specific information used when the thickness is uneven; and the control unit 8 controls the composition of the surface. The surface of the platform 2 (+Z) side is preferably black light. The moving mechanism u 31ZXP / invention manual (repair mm丨Milk (2) secret 12 1311643 ^ into the bead screw (omitted _ with:: rotation, the platform 2 moves along the guide 212 in the substrate = two = Fig. 5 in the direction of the fork. The light illuminating portion 3 of the upper surface 91 of the 敎y includes: halogen Sound 抨 q . Light (that is, including visible:, as a light source 'and emits a white sin, ^1 light with wavelength light) columnar stone 6 ., the direction of movement of platform 2 is vertical in Figure 5 The y direction, and the cylindrical lens 33, the halogen lamp 31 is mounted in the stone direction. The light irradiation portion 3, 'Φ 〇1 M , the end of the (+ Y) side of the rod 32, and is incident from the halogen lamp 31 To the quartz 槔叨曰 picture animal / immediately, # φ , converted to linear light extending in the γ direction (also = a longer linear light in the direction of the Υ And from the quartz rod: the surface is emitted, and guided through the cylindrical lens 33 to the upper surface of the substrate 9 (4), the replacement rod 32 and the cylindrical lens 33-based optical system, which convert the light from the halogen lamp 31 into the movement with the platform 2 And the upper surface of the guide substrate 9 is in the form of a line, and the "middle" indicates the light path from the light-irradiating portion 3 to the substrate 9 with a single chain line (the light path from the substrate 9 to the light-receiving unit 4 is also the same). The portion of the light emitted from the portion 3 is partially reflected on the upper surface of the film 92 (10) side on the upper surface 91 of the substrate 9. The film 92 is light transmissive to the light from the light irradiation portion 3, and the light from the light irradiation portion 3 is not in the light. Light reflected from the upper surface of the film 92 passes through the film 92 and is reflected on the upper surface 91 of the substrate 9 (i.e., the lower surface of the film 92). In the film thickness unevenness inspection device, the interference light of the light reflected on the surface of the film 92 in the substrate g and the light reflected on the upper surface 91 of the substrate 9 is incident on the light receiving unit 4 via the wavelength switching mechanism 5. The wavelength switching mechanism 5 includes: a plurality of optical filters (for example, an interference filter having a half width of 312 ΧΡ / invention specification (supplement) / 95-11/95127465 13 1311643 nm) 5 selectively selectively transmitted through each other The light of the wavelength '·the circular plate filter turns 52 52 holds the plurality of optical filters 51 and the filter rotating motor 53 and is mounted in the filter turntable - for rotating the filter turntable 52. The filter disk 52 is disposed such that its normal direction is parallel to the optical path from the substrate 9 to the light receiving unit 4. Fig. 6 is a view of the wavelength switching mechanism 5 viewed from the side of the substrate 9 in a direction perpendicular to the filter turntable 52. As shown in Figure 6. In the filter turntable 52,

Six circular openings 521 are formed at equal intervals in the circumferential direction, and five kinds of optical filters 51 having different transmission wavelengths are mounted in the five openings 521. In the wavelength switching mechanism 5 shown in FIG. 5, the filter rotating motor 53 controlled by the control unit 8 rotates the filter dial 52, and selects either optical in the five optical filters 51 (see FIG. 6). The filter 51 (hereinafter, referred to as "other opticals; the filter 51 is distinguished from each other and referred to as "select optical filter, wave device = a") is disposed on the optical path from the substrate 9 to the light receiving unit 4. Thereby, among the reflected light from the substrate 9 (that is, the reflected light including the white light corresponding to the interference light of the five transmission wavelengths of the five optical filters 51), only the selective optical filter disposed on the optical path is provided. The interference light of the specific wavelength (=, referred to as "specific wavelength") corresponding to 51a is transmitted through the selection optical filter 51a and guided to the light receiving unit 4. Further, when the filter rotating motor 53 rotates the filter turntable 52, the selection optical filter 5A disposed on the optical path from the light-irradiating portion 3 to the light-receiving unit 4 among the plurality of optical filters 51 is switched to another optical The filter 51 is changed in wavelength (i.e., specific wavelength) of the interference light received by the light receiving unit 4. Thus, the wavelength switching mechanism 5 is changed to the plurality of optical filters 51 by switching between the plurality of optical filters, the filter 312XP, the invention specification (supplement)/95-11/95127465 14 1311643 51, and the optical filter 51a. A switching mechanism for a specific wavelength related to the inspection of the thickness difference by the switching between the wavelengths. The light receiving unit 4 includes a photographing unit 41 and a lens 42 which is disposed between the shadow unit 41 and the selection optical filter 51a of the wavelength switching mechanism 5 and guides the reflected light from the substrate 9 to the photographing unit 41. FIG. 7 is a view showing a light receiving surface of the photographing unit 41. As shown in FIG. 7, the imaging unit 41 is provided with a wired sensor 41A, and the line sensor 41 includes a plurality of imaging elements arranged in a line in the γ direction (for example, a CCD (Charge Coupled Device) )) 411. In the photographing unit 4i of Fig. 5, the interfering light of the specific wavelength of the selective optical chopper 51a is received by the photographing element 411 in the linear light reflected by the film on the substrate 9 by the irradiation of the light irradiation unit 3. Thereby, the intensity distribution of the interference light (that is, the distribution of the output values from the respective imaging elements 411 in the γ direction) can be obtained. Actually, the intensity distribution of the interference light is repeatedly obtained by moving the substrate 9 to the imaging unit 41 in the X direction, so that the two-dimensional image of the film 92 on the board ' can be obtained. 4: 7 includes the output accepting unit 71, and the multi-tone image thickness unevenness detecting unit 7 that outputs the film 92 on the substrate 9 from the photographing unit further includes a stitcher processing unit 72, and accepts the stitching processing unit 72. The image received by the unit 71 is subjected to the material control; the contrast enhancement unit 73 emphasizes the image contrast after the filtering; and the evaluation value calculation unit 74, /ψ72 processes the film for the root V to obtain the horse defect according to the contrast emphasis. Thick not 312XP / invention manual (supplement) / 95- (10) 5] 27 you μ 1311643 are specific evaluation values. 〃 and 2, the process of inspecting the film thickness unevenness by the film thickness unevenness inspection apparatus 1 is explained. FIG. β± _ The figure shows the film thickness unevenness inspection apparatus ί, and the film thickness unevenness on the substrate g is inspected. flow chart. When the thickness of the film 92 on the substrate 9 is uneven, the sensitivity information 61 used for the processing of the person is obtained in advance as a preparation for the film thickness.卩6 is prepared (step S10). The sensitivity information 61 indicates the relationship between the relative reflection intensity of the specific wavelength interference light and the sensitivity of the film thickness variation, and the interference with the specific wavelength and the relative reflection intensity of the light (see FIG. 4). As described in the third section, after determining the relationship between the film thickness and the relative reflection intensity and the relationship between the film thickness and the sensitivity, the sensitivity information is obtained based on the (4). As will be described later, 'because the specific wavelength can also be switched to select the optical filter - other than the transmission wavelength of m 51, it is necessary to have sensitivity information corresponding to the transmission wavelengths of the plurality of optical choppers 51 respectively. However, as described above, the relationship between the sensitivity and the relative reflection intensity of the interference light is substantially the same as that of all other wavelengths used by the film thickness unevenness inspection apparatus 1. Therefore, only one sensitivity information 6 is prepared here. As long as the film 92 on the substrate 9 is a light transmissive film, the sensitivity information 61 does not depend too much on the material of the film, but greatly depends on the incident angle of the incident film 92 from the light of the light irradiation unit 3. Actually, the process of the step-and-step process is performed when the film thickness unevenness inspection device i is assembled and is stored in the memory unit 6 as the device-specific information. When the film thickness unevenness inspection device i is normally used, the following is used. 312XP/Invention Manual (Replenishment)/95_11/% 127465 1311643 In the film thickness unevenness inspection device 1, after the substrate 9 is held on the stage 2 located at the inspection start position shown by the solid line in Fig. 5, the substrate 9 and the platform 2 starts moving in the (+X) direction (step S11). Next, the light-irradiating portion 3 is emitted and the upper surface 91 of the substrate 9 is incident at an angle of 6 。. The incident linear light is irradiated onto the linear irradiation region on the upper surface 91 (hereinafter referred to as "linear shame region") (step S12), and the linear irradiation region is moved relative to the substrate 9. The light from the light-irradiating portion 1 is reflected on the upper surface 91 of the substrate 9, and only the light of the specific wavelength (interference light) is taken out by the selective optical filter 51a of the transmission wavelength switching mechanism 5, and then guided to the imaging unit 41. In the photographing unit 41, the line sensor 410 receives the interference light of a specific wavelength, and acquires the intensity distribution of the interference light in the linear irradiation region of the substrate 9j (step 13). The photographic elements from the line sensor 410 are transferred to the film thickness unevenness detecting unit 7 and received by the output receiving unit 71. In the film thickness unevenness inspection apparatus 1, the control unit 8 repeatedly checks whether the substrate 9 and the stage 2 have moved to the inspection end position indicated by the two-point key line in FIG. 5 in the movement of the substrate 9 (step su When it is not moved to the inspection end position, the process returns to step S13, and the interference light of the specific wavelength is repeatedly obtained, and the (four) degree distribution of the specific wavelength light in the linear irradiation region is obtained. When the substrate 9 and the stage 2 are moved to the inspection end position (step S14), the movement of the substrate 9 and the stage 2 by the moving mechanism 21 is stopped, and the illumination of the light is also stopped (step S15). When the film thickness unevenness inspection device 2 moves in the "flat" direction, the operation of step S13 and the movement of the stage 2 are repeated, thereby obtaining the shadow of the film 92 in the entirety of the substrate 9 ^ ^^#^^ ^#(^)/95.1^95127465 \1 1311643 Image data (that is, photographing). The film 92 of the entire upper surface 91 of the right photographic substrate 9 (or during the operation) 'thickness unevenness detecting portion In the output receiving unit 71 of the seventh embodiment, the output of each of the imaging elements 411 of the line sensor 410 stored in the conversion sensor 410 is converted into a value of, for example, 8 bits (of course, 8 bits or more), and is pressed. In this way, the two-dimensional image for processing in the film thickness unevenness detecting unit 7 is generated (substantially the image obtained by the image capturing unit 41, and the image before the processing described below is performed, hereinafter referred to as " The original image is output to the filter processing unit 72. As described above, the reflectance of the film 92 is different when the preparation film q = degree is different, so the intensity of the reflected light by the line sensor, the fairy, and the article is also different. Therefore, when the film thickness of the film 92 is not uniform, it is preferable that the image output receiving portion 71t is also generated in the original image, and the maximum value of the relative reflection intensity used for the processing is obtained for each of the image forming elements 4u. And the minimum. The outer edge portion of the film 92 on the W substrate 9 is the thickness of the film 92. The thickness of the film 92 is reduced. The intensity of the portion at the time of photographing is taken as usual. The maximum intensity and minimum are the maximum and minimum values of the output of element 411. Therefore, the image of the photographic element 4U is "acquired by the pixel value = prime: image: r maximum and minimum values, and these i-parameter elements 41 « and only the relative reflection intensity of the shell corresponds to the The maximum and minimum values of n are taken. Furthermore, the maximum and minimum values of the respective photographic elements 411 depend on the relative reflection intensity at 312 ΧΡ / invention manual (supplement) / 95-11/95127465 18 1311643 Since the element 411 is disposed relative to the light-irradiating portion 3, it can be obtained in the same manner as the sensitivity information, and is acquired when the film thickness unevenness is detected. This value is stored in the memory unit 6 and used in the inspection. The processing unit 72 compresses the original image and generates an ith image: "If the pixel value of the pixel in which the original image t is located at the coordinates (χ, γ) is Fxy, the range of the original image, the pixel X, and the pixel is The unit f is generated in the first image, and the pixel value Axy of the pixel of interest is obtained according to the equation (4). A, #十"一iSa(y+W-1

Σ Σ fxA (4) X=sax Y=say = real (four)...3 is 4 (pixels), so the S/N ratio of the shirt image is increased to 4 times that of the original image by the operation of equation (4). When the original image is compressed, the low (four) wave image is imaged on the first image, and the second image is generated based on the first image. Decide the low-pass data processing: ;::= smooth each side of the green ...) the square of the pixel, 帛 2: two... the pixel value of the pixel of the (X, y) pixel is located in the third pixel of the coordinate pixel The pixel value '^ in the image is found. ‘, ,, (4)) and hunt by equation (5) and x+Sj y+sj

Lxy = Σ Σ Axy/(2si + l)2 X=X_Sj Y=y_sj 312XP/Invention Manual (supplement)/95-11/95127465 ...(5) 19 1311643 Image-based high-pass filter processing, According to the second image, the third image system removes the density variation of the low frequency which is the early influence of the contrast enhancement processing described below. Here, the second pixel * Hxy located at the coordinates (x, y) is obtained by the equation (6) using the pixel value L (see equation (5)) in the second shirt image of each pixel in the vicinity of the pixel of interest.

HYV = L

...(6) 瞀ί I!) Table: The following situation: As the high-pass filter processing, the second port of the operation uses the pixel-centered sides and the length (2s2 + anamorphic square window) As described above, the low-pass filter processing is performed on the first video of the original image of the IV image in the m processing unit 72, and the band-pass filter processing in the specific spatial frequency band is performed by the real-nine pass filter processing (step). S16) When the chopper processing unit 7 ? Φ # ϊ田# i processes the σ beam, the contrast enhancement process is performed by the contrast enhancement sub-image, thereby generating a strong image (the step is to emphasize the image) The pixel value Exy located in the coordinate (x, y) uses the following values and uses the equation (7) to find the pixel 仏 of the pixel, and the contrast coefficient (here, the correlation coefficient of the contrast width of the visualization object -I) rc ' By dividing the pixel value Α of the pixel of interest of the one-shirt image of the band-pass filter processing by 255 and normalizing = the value k is obtained by the round-out receiving unit 71 (or pre-memorized in the memory L and deriving the pixel of the pixel of interest) The maximum value of the relative radiation intensity of the value of the photographing piece 411 Rk The nux and the minimum value Rk are based on the sensitivity of the figure 3_ invention specification (supplement)/95-11/95127465 20 1311643 information 61 obtained by the function fs (refer to equation (3)), and the background value br Η, 1 +1 , (7) kmin

Cvv-R where ^"IcmaY -R- kmin in the present embodiment 'contrast coefficient r. It is 0.05 and the background value is 127. Further, since the third image is a compressed image, actually, the plurality of imaging elements ^1 correspond to the attention image, but when calculating by the equation (7), the maximum and minimum values of the relative reflection intensities of any of the imaging elements 411 are used. Furthermore, when the pixel value E is quantized, the value is smaller than 〇, and the pixel value l is 0'. The value of the value is greater than 255. The pixel value Exy is 255. In the equation (7), each of the third images derived from the original image The contrast factor η of the pixel is multiplied by the sensitivity derived from the pixel value Axy of the image corresponding to the image (the corresponding image of the image), thereby increasing the sensitivity of the original image for each image of the third image. The smaller the contrast is emphasized, the 7 'contrast emphasis section 73' is based on the sensitivity of the phase change = the contrast of each pixel of the image, and the sensitivity of the strong image in the strong image is dependent on Film thickness and change of shadow (fall: two shots, (7), the pixel value of each pixel of the third image ❹ and the corresponding maximum intensity of the corresponding reflection intensity of the corresponding photographic element # 411:: to correct 'may also Simultaneous correction of multiple photographic elements 4Π When the contrast enhancement processing is completed, the evaluation value calculation unit 31 (supplement)/95-1 〗 / 95127465 21 1311643 74 shown in FIG. 5 performs specific arithmetic processing on the emphasized image, regarding the film thickness. The uneven thickness of the entire film which is unevenly spread over the entire surface of the substrate 9 and the unevenness of the film thickness partially present on a part of the substrate 9 are uneven, and the unevenness of the linear film thickness is generated in the column or the line The film thickness unevenness of the stripe film thickness in the direction is quantified, the degree of film thickness unevenness (so-called film thickness unevenness intensity) is quantified, and 乍 is calculated to indicate the degree of film thickness unevenness derived from the @5 week scene. The evaluation value of the value of the (amplitude level) (step S18). The reflectance of the film 92 for light of a specific wavelength is as shown in Fig. 1, and the periodic variation of the thickness of the film is as described with reference to Fig. 1 and 2 shows that the sensitivity is extremely small near the maximum value of the reflectance and the minimum value. Therefore, the thickness of the film 92 is near the film thickness where the sensitivity is small (that is, when it is included in the dead band). The pixel value in the original image obtained is almost unchanged. The accuracy of the detection of the discreet (that is, the variation of the film thickness) is lowered. False = the thickness of the film 92 on the substrate 9 varies in the dead band, and the film thickness is not accurately detected based on the specific wavelength. It is very difficult. In the Lu 2 film thickness unevenness inspection device, as described above, an optical wave filter is used as the selection optical filter 51a, and the transmission wavelength of the selective optical filter Ha is made as the specific wavelength. In the steps nn to si8, 卯f (V step S1 9), the control unit 8 drives the filter=%-turn motor 53 of the wavelength switching mechanism 5 to rotate the filter disk 52, and arranges the other light wrapper 51 on The specific wavelength in the wavelength switching mechanism 5 is changed from the substrate g to the optical path of the light receiving unit 4 (step S2). By changing the characteristic wavelength, as shown in Fig. 2, the dead band of the film thickness also moves. Thereafter, the platform 2 is returned to the inspection start position by the moving mechanism 21, and the instruction manual (Supplement Secret (2) 1311643 is restarted and the platform 2 $ && / μ t 1 φ . is moved again (step S11). In the case where the film thickness unevenness inspection package receives the position from the beam position, the imaging unit 41 performs the film thickness unevenness detection 41 times, and the 9-reflected reflected light is different from the first movement. The light, and the two Geng people who are irradiated with the platform 2 obtain the anti-discovering X-knife from the linear irradiation area on the base 9 and send it to the film thickness unevenness detecting unit 7, and then the platform 2 stops moving (step S12~) S15). 1 and 'Bypassing the band-pass filter processing of the ςι 仃 疋 疋 疋 疋 变更 变更 变更73, the contrast is emphasized, and the evaluation value of the film thickness in the image is emphasized (step S18). When the processing of SU to S18 is completed at the specific wavelength after the change (the bolus " step S19)', the other light is different from the processing of the first and second times, and the other light is screamed as an umbrella. The wave filter 51 is disposed on the optical path from the substrate 9 to the second and changes the specific wavelength (step _, the processing of steps S11 to S18 is repeated. In the film thickness unevenness inspection device 1, the sleeve, the Thai f E "right 5 Each of the optical filters 51 has a transmission wavelength of 0 as a specific wavelength, and repeats the processing of steps S11 to S18 by an inverse step (step 9). Then, 5 originals obtained by using the five optical choppers 51 are selected. Two original images with a large deviation from the portion corresponding to the specific area of the film g 2 f ^ , s waist W on the substrate 9 (corresponding to the area in the display device) are used as contrast 2: ^The choice of the original image with higher contrast can also be entered into the 312XP/invention manual (supplement)/95-11/95127465 23 1311643 by other methods, and then the film thickness unevenness obtained for the 2 (four) images The larger value of the evaluation value is compared with the specific threshold value, and if the value is greater than the threshold value When the film 92 on the substrate 9 has a film thickness unevenness exceeding the allowable range (hereinafter referred to as "film thickness unevenness defect"), the film thickness unevenness defect is detected. If the value is less than the threshold value, the substrate 9 is used. If there is no film thickness unevenness (film thickness unevenness defect) exceeding the allowable range (the step is as follows), the thickness unevenness inspection device 1 is used to check the thickness unevenness inspection: : The other substrate (i.e., the substrate having the same thickness as the substrate 9) which is the same as the substrate 9 is continuously subjected to the detection of the film thickness unevenness η', and only two selected as the higher contrast ratio Each of the transmission wavelengths of the image-to-sense filter 51 is a specific wavelength ～S18 (the same as in the second embodiment described below). At 4 o'clock, the path of the substrate 9 in the X direction is straight. : The transmission wavelength of the light=the device 51 is a specific wavelength, and the evaluation value is obtained while acquiring the image (step S19); on the circuit of the substrate 9, the transmission wavelength is the same as the specific wavelength, ^]]~S19) . Then, the evaluation obtained in the two wavelengths (the step of detecting the unevenness of the film 4 compared with the threshold value is shown in Fig. 9 is the sensitivity and film thickness of the interference light at the wavelength corresponding to each optical chopper. The relationship between the sensitivity of the relationship and the film thickness of the relationship between the length and the length of the film: two most: two wave two tables selected according to specific criteria in each film thickness;; the selection criteria of solid 'long', for example, The possible range is not a dead band, and the inclination of the sensitivity of the 312XP/_ specification (supplement)/95-11/95127465 24 1311643 is opposite to each other, etc. As described above, the check bag is set to 1 and has The specific area of the film 92 in the original image = the standard deviation of the pixel value of the part t is 2, the wavelength is: the evaluation value of the film thickness unevenness of 2 / is judged whether there is any film thickness unevenness defect When the thickness of the film 92 of the substrate 9 is known in the case t, as shown in FIG. 9, it is preferable to select two wavelengths of the respective film thicknesses, and according to the two wavelengths of the film 92 and the ancient county, it is difficult to determine the two wavelengths. The above-described processing is performed only by using the same wavelength as a specific wavelength. The person's test image is performed with the above film. The case where the unevenness detecting unit 7 is the same is described. First, the film thickness of the M rows and M lines having the film extending on the substrate having the stripe film thickness unevenness is specified. In the average image, the brightness of the pixels belonging to the same column is the same as that of the substrate on the substrate which does not include the film thickness unevenness component and the noise component, and the solid film thickness (also referred to as the background film thickness) is set to β, the film thickness is uneven: the degree 5 is au', the wavelength of the film thickness unevenness is set to u, and the film thickness is not: the number of the first column to the μ column of the Ty image is set to "will The center line number of the film thickness unevenness image is yc, and the film containing the film thickness unevenness is obtained by the equation (8) using the function 5 of the equation (1) in the interference light of the wavelength of 65 〇 nm. The relative reflection intensity Gs of the thickness unevenness image. Actually, the film thickness unevenness image system only includes the film thickness unevenness of one cycle.

Gs=fR^B + ^(c〇s(^(y.(yc 2 (8) Then 'make each pixel of the film thickness unevenness image shown by the formula (8) plus the noise 312 edge/invention specification ( Supplement) /95-11/95127465 25 Ϊ311643 Use ns to set the standard deviation of the noise component size to n. Use 0.0~1.0 random number rnd to the wavelength of 65〇nm of equation (9), and then as me Then, prepare for the test image in the first step. ns V~^l°Se(l ~-nid} · sin(2x · md) '...(9) Thus, the test image is simplified to the background film thickness and film thickness. Both the heterogeneous and the heterogeneous gas have a plurality of test shadows combining various background film thicknesses and uneven thicknesses of the film thickness. Actually, the size of the test image is 12 〇〇χ 12 〇〇 pixels (8), and the film thickness is uneven λ A The "quasi-deviation ση of the size of the noise component in the equation (8) is 64. The amplitude of the noise component in the equation (9) is 1. 〇. ^ After the test image is converted into the original image of 8 bits, The formula (4) performs compression processing in units of a range of pixels X and pixels, thereby obtaining ι of 4. Then, using the equation (5) for the first image and performing low-pass filter processing to obtain the second image, the second image is obtained by 2 Image implementation using the height of (8) The filter process is performed to obtain the b-th image, and 'the emphasized image is obtained by using the contrast enhancement 2 of the equation (7) for the third image. Further, in the equation (7), the maximum value and the minimum value Rkmin of the relative reflection intensity are used for arbitrary photography. In the element 411, the comparison yield r is 〇.〇5. , and here, as shown in the equation (1 〇), respectively, for each column in each emphasized image, the difference between the pixel value and the background value b is obtained. The absolute value of the average of the plurality of pixels belonging to the column is divided by the value of the background value b, and the maximum value is used as the relative detection intensity m. The relative detection intensity m is calculated as _L. The evaluation value of the unevenness. Here, the f-value b is the same as the formula (7), (2), 312XP/invention specification (supplement)/95-11/95127465 26 1311643 hei and wid are m/4 wid b xy max- ( l,hei) = Σ|ε b.Wld -(10) The above treatment changes the film thickness unevenness depth to 2, 5, and 100 nm' for each financial uneven depth, and the material is divided (4). The test images are subjected to the above-mentioned imaginary, and the relative detection strengths are obtained for the same place. Fig. 10 #, which is obtained from the multiple (four) material image The relative image of the background film thickness change. In addition, the figure is again! In the comparative example, the upper two and two strong = show as a strong comparison with the figure k, 5 weeks of processing, in the formula (7) When the f-machine setting is set to ! (that is, the contrast detection intensity obtained by the contrast emphasis is changed with respect to the background film thickness: in addition to the 'visual view' and the figure U (and, in the following figure (2), The relative detection intensity of the above value is shown as 1. Scene: Week: When the degree is fixed, as shown in Fig. 11, the relative detection intensity of the film thickness unevenness such as the back mId / nm depth = 0.2', even if the background film thickness is deleted (10), the depth is 5Qnm (four) (four) the intensity test is the following. This is because the thickness of the film is changed. In this case, it is difficult to obtain the film thickness with high precision. "This relative" corresponds to the change in sensitivity when the contrast is emphasized. The thickness of the film thickness is less than 5 mm. The thickness of the film is not uniform, and the relative detection intensity is substantially flat (almost fixed) with respect to the change in film thickness. 'The thickness unevenness is checked in the case i, because the five wavelengths of the above-mentioned 312XP/invention specification are utilized. (supplement) /95 11/95ΐ27465 η 1311643 Interfering light', so by selecting the "upper", the best wavelength of the interference light, and the original image Contrast emphasis =: change processing, as shown in Fig. 2, the thickness of each film is not uniform; medium: The detection intensity is flattened with respect to the change in thickness. In Fig. 12, the film thickness of day 2 is not In the mean depth, the relative detection intensity is approximately fixed and the detection intensity is approximately proportional to the depth of the film thickness unevenness. · 20 and 50 nm = two: the maximum value of the relative detection intensity in the uneven depth is the minimum value and the relative detection The variation width of the intensity becomes smaller. Also, 100 nm ^ film = uniformity 'Most of the thickness of the film is relatively high, so it can be detected that the film thickness is uneven. The relative thickness of each film thickness in 10 to 12 is detected in the background film thickness change. The ratio (hereinafter, referred to as "the ratio of the measurement range") of λ 旦 旦 ^ 于 于 于 于 于 于 于 于 h h h h λ λ λ λ λ λ λ λ λ λ λ λ λ λ λ λ λ i, the average of the relative detection intensities in the above-mentioned background film thickness ^ 2 thickness unevenness depth, and the intensity is within a fine range. Further, as described above, the graph u is obtained in a single: indicating the relative detection intensity of the correction without the influence of the sensitivity change; FIG. 1G is obtained in the single-wavelength, and the influence of the change in the sensitivity of the table is corrected. (4) Relative detection intensity; S 12 is the phase-measured intensity in the image obtained by correcting the influence of sensitivity change from the wavelength selected from the multiple wavelengths and the film thickness, in Table 1 ' The item name indicating the ratio of the stable detection range in the graph u is expressed as "the case where the correction is not performed", and the item name indicating the ratio of the stable detection range in Fig. 10 is expressed as "the correction 312XP/invention specification ( The patch) /95-11/95127465 28 1311643 will not show the stable detection range in Figure 12, "she, e, et al." This dry item name list is "the case of wavelength selection and correction". Closing table 1 is not corrected - the case of wavelength correction and correction in the case of correction gjl · uneven depth [η 79 ----- | | fu ° 00 4 8 8 9 5 as shown in Table 1 'Ling Knock = two rings' relative detection intensity is large unevenness - the film thickness range is greatly reduced by J (that is, the ratio of the stable detection range is increased). Further, it can be seen that the ratio of the plurality of wavelengths corresponding to the film thickness selection (four) stable detection range is about 9%, and high-precision film thickness unevenness can be detected in a wider film circumference. Product Description: In the film thickness unevenness inspection device 1, by referring to the pixel values of each pixel of the sensitive and the Bayer 61 and the original image, the sensitivity of the original image in the H#41 is changed depending on the film thickness. ^; The amplitude range of a specific spatial frequency band in the image derived from the film image can be used to check the substrate 9 on the surface of the substrate 9 to be uneven. Further, it can be realized, and the first detection unit 7 derives the image from the original image. 3 images of each image of the singular disk 2 should be = shadow 彳 411 corresponding (four) sensitivity change ^ school 2 can also simultaneously correct the output characteristics of multiple photographic elements 411 and can also be used in the film thickness unevenness inspection device In 1 , only 2, 3 or 4 312XP/__ book (supplement) / 95-11/95127465 29 1311643 optical filters 51 are used, and in steps S19 and S2 of Fig. 8, the specific wavelengths are different from each other. Switching between 2, 3 or 4 wavelengths, and repeating steps S11 to S18 (the same applies to the second embodiment described below). In the thickness unevenness inspection apparatus 1, the film thickness unevenness inspection process is performed at a higher speed than the above-described process example, and the above-described process example repeats the movement of the 5-man substrate 9 in the X direction by using five optical filters 51, thereby The film thickness unevenness is inspected with high precision in a wide range of thicknesses. Fig. 13 is a view showing the structure of the thickness unevenness inspection device 1a of the second embodiment. For example, a white interference type film thickness measuring unit is added to the film thickness unevenness inspection device 1 of Fig. 5. The film thickness measuring unit 11 can be moved to the main surface of the substrate 9 by the measuring unit moving mechanism 12 by γ. The other structure is the same as that of the film thickness unevenness inspection device 1 of Fig. 5, and therefore the same reference numerals are given. Fig. 14 is a view showing a process flow for inspecting the film thickness unevenness of the crucible 92 on the substrate 9 by the film thickness unevenness inspection device 1a. A part of the figure is shown in the process between step S10 and step S11 in Fig. 8. When the film thickness unevenness inspection device 1a checks the film thickness unevenness of the film 92 on the substrate 9, it is prepared as a preparation. Sensitivity information and film thickness sensitivity information 61a and remember The memory unit 6 (Fig. 8: Step S1). Here, in the present embodiment, the sensitivity information 61a indicates the sensitivity and film of the interference light of the transmission wavelength in each of the plurality of optical choppers 51 as shown in Fig. 2 . In the case of a thick relationship, FIG. 2 shows the relationship between the sensitivity of only three kinds of transmission wavelengths and the film thickness, and then controls the moving mechanism 21 and the measuring unit moving mechanism 12, and the measurement positions of the thickness measuring unit 11 are made uniform. The specific position 312XP of the film 92 on the substrate 9/invention specification (supplement)/95-11/95127465 3〇1311643 is taken, and the film 92 at the position is measured on the substrate 92 in the film 92. ). Actually, the film 92 in the upper film 92 is substantially the same as the thickness of the film 92 at 25 o'clock. (The position of the film 92 is obtained by 予 位置 予 予 。 。 。 。 。 。 。 。 。 。 。 。 半 半 半 半 半 半 半21 platform 2 returns to the inspection start position, and two = movement (Fig. 8: step su). The film thickness unevenness inspection device h is in the middle of the movement. The movement of the movement is synchronized by: = and repeatedly obtaining the line from the substrate 9. The intensity of the illuminating area;; = is the cloth, when the platform 2 moves (steps S1 to S15). At the beam position, the platform 2 is compressed in the film thickness unevenness detecting portion 7 and then compressed as the original image. The first image of the original image is processed by the waver to obtain the band pass ratio enhancement processing of the first frequency band, and is generated; step: S16) 'after' is performed on the utilized film thickness measuring unit ii =, : image (step S17). At this time, the thickness of the corresponding surface sensitive sensitivity μ (four) 92 is derived from the distribution of the thickness of the film 92 of the image of the image of the object ♦, and the spirit obtained by referring to the sensitivity of the reference == Change η (saki: use; and note 2, ^^ evaluation value (step thickness unevenness in the emphasis on the image to the right of the film Uneven inspection, twisting, and each of the (10) material slits (10) (the process of repeating steps S11 to S18 for the special wavelength: 5 originals:: medium f uses 5 optical filters 51 The two original images with higher contrast are selected from the section, and the larger the value of the film thickness unevenness obtained by the two original images, the larger value 3 coffee _ manual _) / 95 11 / 9512 · 31 1311643 compared with the specific threshold value. Then, when the value is cut to the limit value, the membrane defect 2 on the 9 has a membrane soil unevenness exceeding the allowable range; when the value is below the threshold value, λ _, & The thickness of the film is measured. The film on the plate of the Dingmu Lane is removed, and the film thickness is uneven in the allowable range of the kg (step (4) heart; the inspection of the film thickness unevenness by the unevenness inspection device la, ^ Figure 9 'When the pre-mosquito is preferably selected at two wavelengths of each film thickness', the thickness of the film 92 obtained may be specifically referred to as ^ wavelength, and only the wavelengths are (4) fixed wave (four) lines = As described above, the film thickness unevenness inspection device of Fig. 13 is _: strict: the thickness and sensitivity information 6 is easily corrected to obtain the sensitivity of the original image of the shadow The effect of the film thickness change is detected, and the film of the specific spatial frequency band in the image derived from the image is detected. The film thickness unevenness on the substrate 9 can be inspected with high precision. In the film thickness unevenness inspection device 1a, the element 411 is prepared to indicate the relationship between the sensitivity and the film thickness, and in the film thickness unevenness detecting portion 7, the image is derived from the original image. For each pixel, the effect of the change in the degree of change of the y y y y y y 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The form can have various deformations. In the first and second embodiments, the intensity of the interference light is generalized: strong: the intensity of the interference light when the intensity of the incident light is 1, that is, the intensity of the incident light is described, but the specific wavelength is Relative reflection intensity and 312XP / invention manual (supplement) / 95 · 11 / 95 ΐ 27465 ^ 1311643 degrees: solution a 4 'the intensity of the 歩 light is essentially the same meaning', so the intensity of the interference light of the wavelength of the sensitive I Temple can be changed Ratio of film thickness variation L:::: The relationship between the sensitivity of the first embodiment and the intensity of the interference light of the temple wavelength. Root = Xin 41 original image of each pixel 'value (or, according to the thickness of the corresponding position of the film 92) with reference to the sensitivity of the second to remove the corresponding sensitivity 'and multiply the coefficient corresponding to the sensitivity: the prime value 'obtained to make the sensitivity Images with reduced effects of change can also be used. At 2 o'clock, each pixel of the original image is subjected to correction corresponding to the corresponding imaging element 411;:: solid: the influence of the sensitivity change. Then, by only taking the image with the pass, the detection result indicating the degree of the amplitude of the specific spatial frequency band is output. At this time, the film thickness unevenness detection is performed independently, and the surface dryness %:: contrast enhancement processing and image density of the specific spatial frequency band amplitude in the original image are used to detect film thickness unevenness. As described above, when the sensitivity is affected by the change in the film thickness, and the degree of the amplitude of the specific spatial frequency band in the original image or the original image is detected as the film thickness unevenness, the film is stretched out, for example. Various treatments are performed in the % film thickness unevenness detecting portion, and the inspection result of the film unevenness may be the image of the evaluation value table (4). j <

In the first embodiment, the sensitivity 61 and the sensitivity of the relative reflection intensity are not necessarily calculated. For example, a substrate having various film thicknesses is prepared, and the relative reflection strong family and the film thickness are obtained by actual measurement. 'The relationship between sensitivity and relative reflection intensity can also be derived. T 312XP/Invention Manual (Supplement)/95-11/95127465 1311643 Further, a function similar to the relationship between the sensitivity and the relative reflection intensity shown in Fig. 4 can be obtained. Obtained as sensitivity information, based on this function, sensitivity is used to correct the effects of changes in the original image. At this time, the influence of the sensitivity depending on the change in film thickness can also be corrected to some extent. In the above-described i-th and second embodiments, the degree of contrast enhancement in the contrast enhancement unit 73 is changed, and the image of the original image guide ii obtained by the imaging unit 41 is highly sensitive. Correction of the influence of the effect, but as described above, when the correction of the influence of the sensitivity change is performed as an independent process from the contrast enhancement processing, the above-mentioned Japanese Patent No. 33355() No. 3 may be partially used as the emphasis processing of the image contrast. The method. In the method, the smoothed image is obtained by using a median filter to obtain a smoothed image, and the material value of each pixel of the original image is divided by the image value of the image and the corresponding pixel of the image of the dry-sliding image. The value emphasizes the uneven thickness of the film to be detected. In the film thickness unevenness inspection device, the optical filter (1) is switched by the wavelength (4) mechanism 5 on the substrate 9 side of the light receiving unit 4 so that the specific wavelength is switched between a plurality of wavelengths different from each other, for example, in the light irradiation portion 3. A plurality of light sources that emit light of a single wavelength different from each other are provided, and a light source that is activated by switching control of the control unit 8 (that is, the control unit 8 is used as a switching mechanism) can be used as a The specific wavelength of the wavelength of the interference light received by the imaging unit 41 is switched between a plurality of wavelengths different from each other. The injection portion t' can be provided in place of the quartz rod 32. The plurality of optical fibers are arranged in a straight line, and the optical fiber array from the nucleus lamp 31 is replaced by linear light through the optical fiber array. In addition, instead of the tooth lamp 31 and the quartz rod 32, the row 312XP/__ book (supplement)/95-11/95127465 34 1311643 $ is a linear plurality of light-emitting diodes as a light source for emitting linear light. Further, in the photographing unit 41, when it is necessary to shorten the photographing time of the substrate 9, etc., a two-dimensional CCD sensor may be provided instead of the line sensor 410. The holding portion of the holding substrate 9 may hold the substrate 9 by holding the outer edge portion of the substrate 9, for example, in addition to the lower surface of the substrate 9 and supporting the substrate 2 of the substrate 9. The film thickness unevenness inspection apparatus according to the above embodiment can also be used for detecting the thickness of the insulating film or the conductive film formed on the substrate 9 other than the photoresist film. Further, the film thickness unevenness inspection device can also be used for inspection of film thickness unevenness of a film formed on another substrate such as a semiconductor substrate. The invention has been described above in detail, but the description is by way of example and not limitation. Therefore, various modifications or forms are possible without departing from the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a change in reflectance of a film with respect to a film thickness. Fig. 2 is a graph showing the change in sensitivity with respect to film thickness. Figure 3 is a graph for explaining the relationship between sensitivity and relative reflection intensity. Figure 4 is a graph showing the relationship between sensitivity and relative reflection intensity. Fig. 5 is a view showing the configuration of a film thickness unevenness inspection device according to the first embodiment. Fig. 6 is a view showing a wavelength switching mechanism. Fig. 7 is a view showing a light receiving surface of a photographing unit. Fig. 8 is a view showing a process flow for inspecting the film thickness unevenness of the film on the substrate, 3J1/95127465 35 1311643. Fig. 9 is a view showing the relationship between the sensitivity of the interference light of a plurality of wavelengths and the film thickness. Fig. 10 is a graph showing changes in relative detection intensity with respect to background film thickness. Fig. 11 is a graph showing changes in relative detection intensity with respect to background film thickness. Fig. 12 is a graph showing changes in relative detection intensity with respect to background film thickness. Fig. 13 is a view showing the configuration of a film thickness unevenness inspection device according to a second embodiment.

Fig. 14 is a view showing a part of a processing flow for inspecting the film thickness unevenness of the film on the substrate. [Description of main component symbols] 1. la film thickness unevenness inspection device 2 platform 3 light irradiation unit 4 light receiving unit 5 wavelength switching mechanism 6 memory portion 7 film thickness unevenness detecting portion 8 control portion 9 substrate 11 film thickness measuring portion 312XP/ Disclosure of Invention (Supplement)/95-11/95127465 36 1311643 12 Measuring section moving mechanism 21 Moving mechanism 31 Halogen lamp 32 Cylindrical quartz rod 33 Cylindrical lens 41 Photo section 42 Lens 51 Optical filter 51a Selection optical filter 52 Disc Filter wheel 53 Filter rotation motor 61 ' 61a Sensitivity information 71 Output reception unit 72 Filter processing unit 73 Contrast enhancement unit 74 Evaluation value calculation unit 91 Main surface 92 Membrane 111, 112, 113, m, 122, 123, 130 Line 211 Rotary motor 212 Guide 410 Line sensor 411 Photographic element 521 Opening 312XP / Invention specification (supplement) / 95-11/95127465 37

Claims (1)

The holding portion 'holds the substrate on which the light-transmitting film is formed on the main surface; and the light-emitting portion emits light to the 臈 at a specific incident angle; the shadow portion receives the light from the light-irradiating portion The interference light of the characteristic wavelength of the film is reflected and the original image of the film is obtained; 1311643 X. Patent application scope · The film thickness unevenness (mura) inspection device is a film thickness unevenness inspection device for inspecting the film thickness unevenness of a film formed on a substrate, and is characterized in that it includes: film thickness The unevenness detecting unit changes the sensitivity depending on the thickness of the film, and the influence of the sensitivity is the ratio of the intensity of the interference light of the above-mentioned wavelength to the ratio of the variation of the film t, and the original image or the original image is not Both: Check: 0 "the degree of the amplitude of the specific spatial frequency band in the image as the film thickness 2#. The film thickness unevenness inspection device of the first item of the application (4) range, and the memory part, the genus-L^ τ ^^^ ^ Λ indicates the sensitivity information of the relationship between the sensitivity and the intensity of the interference of the specific wavelength described above, and the film thickness unevenness detecting unit refers to the sensitivity information - the pixel value of the side image and the film thickness are not The above-mentioned effects of the change in the sensitivity of the above-mentioned thinness are examined, and the relationship 3, such as the scope of the patent application, includes the memory section, the sensitivity information of the constant meter, and the film thickness unevenness inspection device. The film thickness is small, and the film thickness unevenness detection degree and the sensitivity information are one or two, "the thickness of the film on the main surface, and the influence of the above sensitivity change" - 312 ΧΡ / invention manual (supplement) / 95_11 / 95127465 曰38 1311643 Edge detection uneven thickness. 4. If the scope of application for patents is 3 W ^ , the inspection equipment of the members is not uniform, and the film thickness measurement unit is further included, and the thickness of the above film on the main surface is taken from the heart. 5. The method of claim 2, wherein the camera cover comprises a plurality of imaging elements, and the film thickness unevenness detecting unit + U is for the original image. Or each pixel of the image from the original image V, whoever is μ, +, 4 A ^, and corresponding photographic elements Do not correct the effects of the above changes in melon sensitivity. The film thickness unevenness inspection device, wherein the above-mentioned original image is subjected to the above-mentioned specific and empty space. 6. The above-mentioned thickness unevenness detecting portion includes a filter processing portion, and a band pass filter of an intermediate frequency band. Processing: The contrast enhancement unit after the processing by the filter processing unit emphasizes the contrast of the original image, and the correction of the influence on the sensitivity change is performed by changing the degree of contrast enhancement in the contrast enhancement unit. 7. The film thickness unevenness inspection device according to the invention of claim 2, wherein the switching mechanism is further provided between the plurality of wavelengths different from each other (4). - a film thickness unevenness inspection method which is a film thickness unevenness inspection method for inspecting a film thickness unevenness of a film formed on a substrate, characterized by comprising: a light irradiation step, and a specific shot from the light irradiation portion The human lens irradiates light to the light-transmitting film formed on the main surface of the substrate; in the soil photography step, the light from the light-irradiating portion is received by the photographing unit in the upper 312XP/invention specification (supplement)/95-11/ 95127465 39 1311643: interference light of a specific wavelength reflected by the film and obtaining an original image of the film; and a film thickness unevenness detecting step, wherein the sensitivity of the edge is affected by the change of the film thickness, and the sensitivity is the specific wavelength The ratio of the change in the intensity of the interference light to the variation in the film thickness is detected as the film thickness unevenness of the original image or the amplitude of the specific spatial frequency band in the image derived from the original image. 9. The method for inspecting the film thickness unevenness according to item 8 of the scope of the patent application, further comprising: preparing a step of preparing the sensitivity of the above-mentioned sensitivity to the intensity of the interference light of the specific wavelength before the film thickness unevenness detecting step In the film thickness unevenness detecting step, the film thickness unevenness is detected while correcting the influence of the sensitivity change with reference to each pixel value of the original image and the sensitivity information. The method for inspecting a film thickness unevenness according to the ninth aspect of the invention, wherein the first relationship between the film thickness and the intensity of the interference light of the specific wavelength and the film thickness are obtained in the preparation step The second relationship of the sensitivity is obtained by acquiring the sensitivity information based on the first relationship and the second relationship. 11. The film thickness unevenness inspection method of claim 8, wherein the step of preparing the film thickness unevenness further includes a preparation step of preparing sensitivity information indicating a relationship between the sensitivity and the film thickness, In the film thickness unevenness detecting step, the film thickness is not detected while referring to the thickness of the film on the main surface and the sensitivity information, while correcting the sensitivity change, 312ΧΡ/invention specification (supplement)/95-11/95127465 40 1311643 All. In the case of the film thickness unevenness inspection method according to the item U of the patent application, the thickness of the film on the main surface is thicker than (4) before the step of preparing the material. 13. The above-mentioned photographing section of claim 9 includes a plurality of photographing elements, wherein the method 1 wherein: the description = 3 = :: in the detecting step 'for each of the original image or the pixel from the upper image' Correction is performed with the corresponding photographic elements and the effects of the individual sensitivity changes described above. = The film thickness unevenness inspection method of claim 8 wherein the film thickness unevenness detecting step comprises the steps of: performing the band pass filter processing of the specific spatial frequency band in the image processing; and Step of: "Contrast of the above-mentioned original image after processing": Correction of the influence of the sensitivity change by changing the contrast emphasis in the step of emphasizing the contrast. 15·If the patent application scope The film thickness unevenness inspection method of item 8, wherein the step of repeating the step of "switching the specific wavelength at two, three or four wavelengths S different from each other" is repeated in order from the light irradiation step to the film thickness Uneven detection step. 312XP / invention manual (supplement) / 95 11 / 95 (2) you