TWI276775B - Unevenness inspecting apparatus and unevenness inspecting method - Google Patents

Abstract

An unevenness inspecting apparatus (1) comprises a stage (2) for holding a substrate (9), a light emitting part (3) for emitting linear light toward a top surface (91) of the substrate (9) on which a thin film (92) is formed, a light receiving part (4) for receiving reflected light from the substrate (9), a wavelength band switching module (5) arranged between the substrate (9) and the light receiving part (4) for switching wavelength bands of light, a moving mechanism (21) for moving the stage (2), and an inspecting part (7) for inspecting unevenness of film thickness on the basis of the distribution of intensity of received light. In the unevenness inspecting apparatus (1), it is possible to enlarge a range of the film thickness where it is capable to obtain the unevenness with high accuracy by making the incident angle theta1 of light from the emitting part (3) to the top surface of the substrate (9) at 60 degrees, and is also possible to prevent a low sensitive range from expanding which lies around the maximum point of reflectance with respect to film thickness. As a result, it is possible to obtain a minute unevenness of film thickness with high accuracy by preventing a fluctuation range of film thickness from being included in the low sensitive range.

Description

1276775 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a technique for inspecting film thickness unevenness of a film formed on a substrate. [Prior Art] When inspecting a film such as a photoresist film formed on the main surface of a glass substrate or a semiconductor substrate (hereinafter simply referred to as a substrate) for a display device, the film is irradiated with light of a light source. The reflected light of the film interferes with the light generated by the transmitted light to check the unevenness of the film thickness. In the inspection of such a film thickness unevenness, when a monochromatic light source such as a sodium vapor lamp is used, "a sufficient sensitivity (i.e., caused by light interference) cannot be obtained due to the thickness and refractive index of the film. The interference fringes do not appear clearly). Therefore, by visual inspection, the thickness unevenness is surely detected by changing the incident angle of the light by tilting the substrate. Further, the substrate is also irradiated with light of a plurality of wavelengths at the same time. However, since the interference fringes corresponding to the respective wavelengths are simultaneously displayed, the overall sensitivity may be lowered. According to the disclosure of Japanese Laid-Open Patent Publication No. 2000-276-61, the surface defect inspection device for detecting defects on the surface of the object is matched with the film characteristics on the surface of the object to be inspected (material) , refractive index, film thickness, reflectance, etc.), one of a plurality of narrow-band filters for limiting the wavelength band of the reflected light of the subject, inserted in the optical path, so as to be on the appropriate wavelength band checking. Further, the technique of changing the angle at which the illumination unit emits light to the subject (i.e., the incident angle of the illumination light to the subject) is also disclosed. 3ΠΧΡ/Invention Manual (Replenishment)/95·06/951〇7391 6 1276775 It is possible to visually tilt the substrate to make the interference fringe breakage easier in the visual inspection, but, as in Japanese Patent Laid-Open 2002 -'=7416, as described in the surface defect inspection device of the publication, the reflected light from the detected image is transmitted, and the luminance value of each pixel is transmitted to obtain a shirt f' in which the thickness of the display film is uneven. At the angle of the subject, the angle of the line of the reflected light is also necessary to adjust the angle of the illumination light with high precision. Therefore, the device configuration becomes complicated and the operation becomes complicated at the time of inspection. In addition, it is considered that the incident angle of the light of the illumination unit to the subject is appropriately angled according to the characteristics of the film thickness unevenness measured by the right person, but the angle of incidence is disclosed in Japanese Patent Laid-Open Publication No. 2002-26741 There is no specific disclosure. SUMMARY OF THE INVENTION The present invention is suitable for inspecting a film thickness unevenness of a film formed on a substrate = a uniform inspection device, and the main object thereof is to detect minute film thickness unevenness with good precision. In addition, it is also an object to reliably detect uneven film thickness over a wide range of variations. The film thickness unevenness inspection device includes a holding portion for holding a substrate, and a light emitting portion that applies light to an incident surface of the light transmissive film of the substrate at an incident angle of _50 or more and 65 or less. a sensor that receives light of a specific wavelength band reflected on the main surface of the substrate to obtain an intensity distribution of light from the specific wavelength band of the main surface; and a wavelength band switching means The above specific wavelength band is switched between mutually different complex wavelength bands. According to the present invention, minute film thickness unevenness can be detected with good precision. In a film thickness unevenness inspection device according to a preferred embodiment of the present invention, the light emitting portion emits light of light including the plurality of wavelength bands. The wavelength band switching means includes: a plurality of filters that selectively allow light transmission of the plurality of wavelength bands; and a filter switching mechanism that is disposed in the plurality of choppers from the light One of the filters to the optical path of the above sensor is switched to another filter. In this way, the wavelength band of the received light can be easily switched.

According to another preferred embodiment of the present invention, in the film thickness unevenness inspection device, the first filter tilting mechanism is further provided, and the first filter is changed by the first filter. The inclination of the optical path; the second dimmer tilting mechanism, wherein the first dimmer is changed between the plurality of choppers and the first dimmer to form a (four) slope of the optical path; And a moving mechanism that moves the holding portion with respect to the light emitting portion and the sensor in a predetermined moving direction along the main surface of the substrate. The light emitting portion includes a light source that emits light of light including the plurality of wavelength bands, and an optical system that converts the light from the precursor source along the principal surface and converts the light into the moving direction Phase, straight linear light, and guiding to the main surface; the sensor is a line sensor, and the shifting step of the above (4) portion is repeated to obtain the reflection of the coating light on the illumination area of the substrate. The distribution of the light of the specific wavelength band described above. In this way, the transmission wavelength band of the oven can be adjusted with good precision. In another embodiment of the present invention, the film thickness unevenness inspection device includes a polarizer disposed in the H-step from the light-emitting portion to the sensor 312ΧΡ/invention specification (supplement)/95-06/95107391 〇1276775 In the light, the s-polarized light in the reflected light of the film is selectively allowed to be transmitted. "In one application of the present invention, the film thickness unevenness inspection device is provided with ... P, holding the substrate with a phantom, and % ejection #, which is 10 for the main surface of the light-transmissive film of the substrate. Above 40. The following incident angle emits light; and the sensing is such that the light of the specific wavelength band reflected by the main surface of the substrate is obtained, and the light intensity of the specific wavelength band from the main surface is obtained.纟 distribution. By this kind of <, it is possible to reliably detect variations in film thickness of the variation. The present invention is also applicable to a method of inspecting a film thickness unevenness of a film formed on a substrate. The above and other objects, features, aspects and advantages of the present invention will be apparent from [Embodiment] FIG. 1 is a front view showing the configuration of a film thickness unevenness inspection apparatus 1 according to a third embodiment of the present invention. In the glass substrate (hereinafter simply referred to as a substrate) 9 used in a display device such as a liquid crystal display device, the pattern forming photoresist film is formed on the main surface 91 of one side (hereinafter - The film thickness of only the film 92 is uneven. The film 92 on the substrate 9 is formed by transmitting light and blocking liquid on the main surface 91 of the substrate 9. As shown in Fig. 1, the film thickness unevenness inspection device 丨 includes a stage 2 which faces the upper side of the main surface 91 (hereinafter simply referred to as "upper surface 91") formed by the film 92 (Fig. 1 (+ Z) side) holds the substrate 9; the light emitting portion 3 emits light toward the upper surface 91 of the substrate 9 held by the stage 2; the light receiving portion 4 is used for 312 χ ρ / invention description (supplement) / 95 · 〇 6 / 95107391 9 I276775 Light: The output 3 is emitted on the substrate 9. • The wavelength band switching mechanism 5 is used first, which is placed at the base of the .21, which is emitted with respect to the wavelength band of the light: Moving the stage and moving the stage 2; detecting the uneven thickness of the light received by the intensity distribution portion 4 of the wavelength band switching mechanism 5; and, in the case of the neighboring, the distribution of the domains, the inspection film 92 In the film 1, it is convenient for illustration: the profile is divided. (Other embodiments are also the same) The surface on the side of the wavelength mechanism 5 is preferably black and dull. The moving mechanism is connected to the motor 211, and the stage 2 is moved along the guide 212 by the surface q/ in the middle direction of the upper surface 91 of the substrate 9. Light emission=provided that: as the light source, the light lamp 31' emits white I7匕3 corresponding to the light of all the wavelength bands of the complex wavelength band of the plurality of filters 51 to be described later; The core cup 32' extends in the gamma direction in the drawing perpendicular to the moving direction of the stage 2; and the cylindrical lens extending in the gamma direction is smashed. In the light emitting portion 3, the tooth lamp 31 is placed on the (9) side end of the quartz rod 32, and the (four) lamp 31 is incident on the quartz rod 32, and is converted into linear light extending in the γ direction (i. The profile is a linear light extending in the Y direction, and is emitted from the side of the quartz rod 32, and is guided by the cylindrical lens 33 to the upper surface of the substrate 9. In other words, the quartz rod 32 and the cylindrical lens are An optical system that converts light from the lamp 11 into a movement with the stage 2 while along the substrate 312 ΧΡ / invention specification (supplement) / 95-06 / 95107391 1276775 upper 91 The linear light is perpendicular to the direction and is guided to the upper surface 91 of the substrate 9. In Fig. 1, the optical path from the light emitting portion 3 to the substrate 9 is indicated by a dotted line (the optical paths from the substrate 9 to the light receiving portion 4 are also the same). The light incident on the substrate 9 from the (10) portion 3 is set to 50 for the human angle of incidence of the upper surface 91 (i.e., the angle between the optical path and the normal direction of the upper surface μ) Θ1. Above 65. Hereinafter, in the present embodiment, it is set to 60. . The portion of the light emitted from the light emitting portion 3 is reflected on the surface of the upper surface 91 of the substrate 9 on the side of the film 92 (10) (hereinafter referred to as "the upper surface of the film"). Since the film μ has a transparent light to the light from the light emitting portion 3, the light that is not reflected on the film from the light from the light emitting portion 3 is transmitted through the film and is reflected on the upper surface 91 of the substrate 9 (i.e., under the film 92). In the film thickness unevenness inspection device i, the light reflected by the upper surface of the film 92 in the substrate 9 and the light reflected by the light reflected on the upper surface 91 of the substrate 9 (hereinafter simply referred to as reflected light) are incident on the light receiving portion via the wavelength band switching mechanism 5 . 4. • The wavelength band switching mechanism 5 is provided with a multi-filter (for example, an interference filter having a half-value width of ljnm) 5 which selectively allows transmission of light of a plurality of narrow wavelengths and different wavelengths; a disk-shaped filter wheel 52, which maintains a plurality of filters 51, and a filter-type rotating motor 53, which is mounted in the filter wheel 52 to rotate the filter wheel 52. The filter wheel 52 is disposed such that its normal direction is parallel to the optical path from the substrate 9 to the light receiving portion 4. Fig. 2 is a view showing the switching mechanism 5 of the wavelength f viewed from the side of the substrate 9 in the direction perpendicular to the filter wheel 52. As shown in FIG. 2, the filter wheel 52 is formed at equal intervals in the circumferential direction to form β circular openings 521, of which 5 openings 521 312 ΧΡ / invention manual (supplement) / 95-06 / 95107391 11 ! 276775 A filter that transmits wavelengths different from each other. In the wavelength band switching mechanism 5, the filter wheel 52 is rotated by the rotation motor 53 controlled by the control unit 8, and five filters are formed, depending on the film thickness and refractive index of the film 92 to be inspected. The selector 51 (hereinafter, 'in order to distinguish from the other filter 51, "冉 is a filter 4a"), is disposed in the optical path from the substrate 9 to the light 4. Among the reflected light of the substrate 9 and the white light reflected light including the light of the five wavelength bands corresponding to the five filters 51, only the selection filter 51a corresponding to the optical path is disposed. The light of a specific wavelength band can be transmitted to the light receiving portion 4 through the selection filter 仏. Then, when the filter rotation motor 53 is passed through and the filter wheel 52 is rotated, the selection filter 51a disposed in the optical path from the light-emitting portion 3 to the light-receiving portion 4 is switched to another among the plurality of filters 51. The filter 51, and k is the wavelength band of light received by the X-ray portion 4 (i.e., the wavelength band is selected). • In this manner, the filter rotation motor 53 and the filter wheel 52 serve as filter switching mechanisms. As shown in FIG. 2, each filter 51 is mounted inside the annular filter frame 54 and is mounted with the filter frame 54 to pass the filter rotating shaft 5 5 at the center of the filter 51 (in FIG. 2 A little chain line is shown to be rotatably supported centrally. The filter rotating shaft 55 is disposed to face the linear light from the light emitting portion 3 in a state where the filter 51 is disposed in the optical path from the substrate 9 to the light receiving portion 4 (that is, in a state in which the filter 51a is selected). The direction of extension (i.e., the direction parallel to the linear light) is the gamma direction in Fig. 1. 12 312 ΧΡ / invention manual (supplement) / 95 · 〇 6 / 95107391 1276775 The selection of the mechanism 5 device ... nearby and called the surface. The portion of the outside of the device 51a and the filter frame 54 is displayed as shown in Fig. 3. The wavelength band switching mechanism 5 is further replaced by a machine f56 for changing the paste light for the line table, -, ) = first 4 4 (refer to the figure) 】) optical path 90 (in Figure 3, the chain is 5, 6 佶, 上 斜 slope). In the wavelength band switching mechanism 5, 'filter tilter change selection ^ light 11... change the inclination of the wire 9G By means of Yiyi: ^Select/Optical 518 is shot in the band of Yanbai (ie, selecting the wavelength band). The transmission wavelength of the reflected light is tilted by the magic mechanism 56 with the micrometer 56i (micr〇meter) , ^ three strong in the lower end of the filter frame 54; and as the spring of the elastic body 562, with the female I in the filter frame 54 of the shirt ^ ^ ^. On the cake P wavelength ▼ switch mechanism 5, the micro-measure According to the lower end of the frame 54, the selection filter is used to make the selection filter... The optical converter is driven by the center of the 55, and the filter frame 54 is rotated in the direction of the direction of Figure 3, by this way, Change the tilt of the selected 遽 仏 U for U0. In addition, by returning the micrometer (6) to the original a reverse % pin rotation, in this way, the selection filter 仏 returns and the optical path The state of 90 is vertical. When the filter and tilt mechanism 56 tilts the selection filter 51a for the optical path 90, the transmission wavelength of the filter 51a for the reflected light from the substrate 9 is shifted to the short wavelength side. Fig. 4 is a view showing the relationship between the tilt angle of the selective chopper 51a for the optical path 9G and the shift amount of the transmission wavelength center wavelength to the short wavelength side. In addition, in Fig. 3, the selection 312Xp/invention specification (supplement) ) / 95-06 / 95107391 13 Ϊ 276775 The angle of inclination of the optical device 51a with respect to the optical path 9 〇 is 51 。. . . : 2: The number 301 is measured by tilting the chopper 5ia. The offset of the straight line is 'the line 302 is the near-straight and the spring of the offset measurement value. As shown in Fig. 4, the wavelength band switching mechanism 5, the holder tilts i. Offset to the short wavelength side

The filter filter will be selected. The switch mechanism 5 is slid by the filter tilting mechanism 56 for each of the five backlights 51. In this way, the respective switches can be changed by the device 51. 51 pairs of optical path 9 〇 (refer to Figure 3 ') 1 inclination. Fig.: The light receiving unit 4 is provided with a line sensor, which is linearly arranged in the γ direction as a CCD (Charge Coupled Device) of the light receiving element, and the collecting lens 42 is disposed in the self. In the optical path of the substrate 9 to the line sensor 41, between the line sensor 41 and the remote selection filter in the wavelength band switching mechanism 51. The collecting lens 42 is emitted from the light emitting portion 3' On the upper surface 91 of the substrate 9, linear light reflected on the film 92 of the linear irradiation region (hereinafter referred to as "linear irradiation region") extending in the x direction (i.e., after reflection on the upper surface 91 of the substrate 9) In the linear light, the light of the selected wavelength band transmitted through the selection filter 51a is collected toward the line sensor 41. The line sensor 41 receives the light of the selected wavelength band after imaging, and obtains the intensity distribution of the received light (that is, the distribution of the output values of the CCDs in the γ direction) while the condensing lens 42 is condensed. This is output to the inspection unit 7. In the film thickness unevenness inspection device i, in the movement of the substrate 9 and the stage 2, the line sensor 41 repeatedly obtains 91 from the base 312XP/invention specification (supplement)/95-06/95107391 14 1276775 The intensity distribution of the reflected light of the formed film 92. m has: image detector 41 铪Ψ 丄丄 、 /, 夺 安 and wood from the line sexy 11 out, and the generation of substrate g above 91 2 yuan ginseng # · ϊ ν and film thickness unevenness detection neighbor 79 Ganzi people In the case of the image, the film thickness of the film 92 is detected unevenly by the pixel value of each pixel (four) generated by the image generating unit 71. _ Say: ί Τ Τ Τ Τ Τ Τ Τ 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜 膜When the film thickness unevenness inspection device shown in I is used to check the film thickness unevenness of the film 92 on the substrate -9, first, the film 92 (yes: quality and film thickness, etc.) In a state where the state 51a is disposed in the optical path, the operator selects the chopper 51a by selecting the filter tilting mechanism 56' of the filter 51a, and the selection filter 51a is changed from the substrate 9 to the linear The inclination of the optical path of the sensor 41 (or the inclination is changed in advance). In this way, the center wavelength of the transmission wavelength band of the selection filter 51a can be shifted to the short wavelength side, and thus The film thickness unevenness detection of the film 92 adjusts the selected wavelength band to a more appropriate range (step SU). Next, after the substrate 9 is held on the stage 2 at the start inspection position shown by the solid line in Fig. 1, the substrate 9 and the platform 2 start to move in the (+χ) direction (step S12). Then, the light is emitted from the light emitting portion 3 and enters the line 91 on the upper surface 91 of the substrate 9 at an incident angle of 60. The irradiation area is irradiated (step S13), and the linear irradiation area moves with respect to the substrate 9. The light from the light emitting portion 3 is reflected on the upper surface 91 of the substrate 9, and transmits a wavelength 312 ΧΡ / invention specification (supplement) / 95·06/95107391 15 1276775 with the selection filter 51a of the switching mechanism 5, whereby only a specific wavelength band is taken out ( For example, the light having a centroid wavelength of 550 nm and a half-value width of 1 〇 nm is applied to the light receiving unit 4. The light receiving unit 4 passes through the condensing lens 42 and the line sensing body 41 receives the reflection from the upper surface 91 of the substrate 9. The light of the wavelength band is selected (step S14), and the intensity distribution of the reflection $ from the linear irradiation region on the substrate 9 in the selected wavelength band is obtained (step S15). The output values of the CCDs from the line sensor 41 are sent to In the film thickness unevenness inspection device ,, the control unit 8 repeatedly checks whether the substrate 9 and the stage 2 have moved to the inspection position where the two-point key line in FIG. (Step S16), the light of the selected wavelength band of the reflected light is repeatedly received without moving to the inspection end position step S14': the strong si4, si5) of the selected wavelength band on the linear irradiation region is taken. In the film thickness unevenness inspection apparatus 1, the stage 2 is moved (5): when it is reversed, the operations of steps S14 to S16 are repeated, and the intensity distribution of the reflected light from the upper-line irradiation region of =9 is repeatedly obtained, thereby omitting the whole Obtain the intensity of the reflected light from the above 91 in the selected wavelength band and then 'when the substrate 9 and the stage 2 move to the sudden stop, the moving substrate 9 and the stage are placed/moved. (Step S1 7). Check ', the selected wavelength from the upper surface of the light receiving unit 4: the image generating unit?!, • The light of the reflected light of Hit Xizheng Luo Ba Shi: =? The image of the difference in luminance value is processed (for example, the intensity of the above 91 is indicated, and the lower is called the "original image".) Through the middle (four) - the image of the human being (with 312XP / invention manual (supplement) / 95_ 〇 6/95107391 Smoothing by intermediate filtering, find 16 1276775 2 = normalized image 'divide the pixel value of the original image by the gamma value corresponding to the smoothed image, and remove it larger than the film thickness variation Throughout a wide range of performances, etc.) The thickness change of the film is as follows: the second-order image of the upper surface of the pixel value change (hereinafter, the following image) (step S21). The highlighted image of the cow is displayed on the display device such as a screen as necessary, and the inspection unit 7 The film thickness unevenness detecting portion 72 is based on the film thickness and the reflectance of the film 92 formed on the upper surface 91 of the substrate 9 on the basis of the emphasized image, and the line 101 indicates that the film thickness of the present embodiment is not the same. The line indicates the reflectance of the light of the second film thickness unevenness inspection device in the fifth embodiment (that is, the reflectance under the same conditions as the light from the first shot portion to the substrate "VI Mumu"), and the wave + one tender f 102 indicates For the wavelength change of 55〇nm, the relationship between film thickness and reflectivity is also::::: Γ 92 film thickness distribution exists = the intensity of light is also different. Therefore, in the film and strong MW· The above 91-dimensional image (the original image Γ value also produces the above-mentioned 9 旦 傻 膜 膜 厚 检测 72 72 72 , , , , , , , , , , , , , , , , , , , , , , , 检查 检查 检查 检查& there is a greater degree of unevenness than the pre-312XP / invention manual (supplement) / 95_〇 6/951 fat 9 j In the case of the area, the test is determined to correspond to the area of 17 1276775 on the above 91, and the area is the area where the film thickness is uneven beyond the allowable range. The reflectance of the period L Μ 92 is as shown in Fig. 7

::Accepted:. Fig. 8 shows the movement of the film 92 when the film thickness of the film 92 is only changed. As shown in Figs. 7 and 8 , the change in reflectance changes very little in the vicinity of the maximum point of the reflectance and in the vicinity of the minimum point. Therefore, when the film thickness is slightly changed, the image generation unit? In the case of the image (original image and emphasized image), the pixel value hardly changes, so the film thickness unevenness detected by the low film thickness unevenness detecting unit 72 (that is, the film thickness variation) is " Precision. The film thickness region in which the ratio of the reflectance change to the film thickness variation is very small is referred to as a "low sensitivity region". The film thickness of the film 92 on the substrate 9 is in the low-sensitivity region of the line 1〇1 in Fig. 7, and it is difficult to detect such film thickness unevenness based on the line 101 alone. Therefore, the film thickness unevenness inspection device i towel, as described above as the optical eliminator 51a, after the i-th detection of the film thickness unevenness (; 骤°), the 邛8 drive wavelength band switching mechanism 5 filter rotation motor When the filter wheel 52 is rotated and the other filter 51 is disposed in the optical path from the substrate 9 to the light receiving unit 4, the selected wavelength band in the wavelength band switching mechanism $ can be changed (step S231). Changing the selected wavelength band also moves the film thickness to a low sensitivity area. /, after necessary or in advance, using the filter tilt mechanism 5 6, the variable update filter 51a for the optical path tilt, the selected wavelength band can be adjusted, using the moving mechanism 2H load 纟 2 When the inspection position is returned, the substrate 9 and the stage 2 are moved again (steps S11 and S12). Film thickness unevenness inspection|Setting 1, the light reaches the end of the inspection position 18 312XP / invention manual (supplement) / 95-06 / 95107391 1276775 ^ with the light receiving portion 4 from the light exiting portion 3 The reflection* of the substrate 9 receives a selected wavelength band different from that in the case where the first film thickness unevenness is detected, and the reflected light intensity from the linear irradiation region on the substrate 9 is repeatedly obtained: the image is sent to the inspection portion 7 The generating unit 71 then stops the shifting force: the plate 9 and the stage 2 also stop the illumination light (step (7). = * the image generating unit 71 of the inspection unit 7 generates the upper surface of the substrate 9! = step S21)' and the film The thickness unevenness detecting unit 72 detects the film thickness unevenness of the upper surface 91 = 92 (step S22). After the completion of the third == 3), based on the results of the first and second inspections, the film thickness of the film 92 formed on the upper surface 91 of the substrate 9 is not uniform, and the bundle is inspected by the uneven thickness inspection. In the film thickness unevenness inspection device 1, the dissimilar optical device 51 has a plurality of ruthenium film thickness low sensitivity regions in the i-th sub-film between the mutually different complex wavelength bands. Yan Yan 'knife, select the wavelength band, so the detection is different. By this means (or all), even if, for example, the portion-sensitivity region of the range of the thickness of the thickness = is included, the light incident angle W of the substrate 9 in the film thickness unevenness inspection device is the second film; Set to 1. The film thickness unevenness inspection incident angle of the second embodiment in which the light is emitted from the light emitting portion 3 is 30. As shown in Fig. 7, the reflectance is too large for the film thickness, so that the line m ^ between the adjacent low-sensitivity regions is large. As a result, see the range of the slope of love, 312XP / invention manual (supplement) / 95-06/95107391 1276775 = the range of detection film thickness unevenness becomes larger. As described above, in the film thickness unevenness inspection, the incident angle of the light from the light emitting portion 3 to the substrate 9 is particularly the thickness unevenness inspection device! The towel is set to an incident angle of 45 than the sling. It's bigger, specifically set to 5〇. As described above, the film thickness range in which the film thickness is uneven can be detected with high precision by the expansion of the month b. Fig. 9 shows that the incident angle of light from the light exit portion is 7 〇. When the film is made, the relationship between the film thickness and the reflectance. As shown in Figure 9, the angle of incidence is 70. At the time of the low sensitivity area near the maximum point of the reflectance, the unevenness inspection device is large! In the middle, the light is set to the substrate i... i: the following in the factory, the amplitude of the low sensitivity region near the maximum point of the reflectance is prevented from increasing. Thus, the light from the light emitting portion 3 in the film thickness unevenness inspection device 1 is set to 50 at an incident angle Θ1 of the plate 9. Above 65. In the following, the film thickness range in which the thickness unevenness is detected can be increased in the south, and the range of the low sensitivity region near the maximum point of the reflectance can be prevented from increasing. As a result, it is possible to prevent the film thickness variation range from being included in the low sensitivity region, and it is possible to favor the film thickness unevenness. Further, in the film thickness unevenness inspection device i, the incident angle of the light 3' to the substrate 9 is fixed below, and the film thickness unevenness detection with high precision can be realized, so that it is not necessary to provide a change light pair. The mechanism of the incident angle of the substrate 9 makes it possible to manufacture the film thickness unevenness inspection device. Further, in many cases, the film 92 on the upper surface 91 of the substrate 9 can be easily formed by applying a coating liquid, and the film thickness unevenness inspection device 1 can detect uneven film thickness unevenly, and is therefore particularly suitable. In the coating of the coating liquid 312XP / invention manual (supplement) / 95_06 / 95〗 〇 7391 20 ! 276775: The thickness of the film 92 is uneven (ie, uneven coating) detection. / Thickness unevenness check I set the 'rotary filter wheel 52' to switch the selected light source from the substrate 9 to the optical path of the light portion 4 to another filter, and the Yiguang fork light portion 4 The received wavelength band from the substrate 9 that reflects the light (i.e., the selected wavelength band) can be switched to the appropriate wavelength band. Further, the light emitting portion 3 emits linear light, and the 9# reflected light from the linear direction of the linear light is detected by the linear sensor 41 in synchronism with the substrate 9 in a vertical direction, and the light is entirely applied to the upper surface 91. The substrate 9 2 incident angle Θ 1 is held constant. In this way, it is not necessary to consider the influence of the human angle on the reflectance in the film thickness non-k measurement, so that the film thickness unevenness detection can be performed, and the film thickness unevenness detection process performed by the portion 72 is simple. However, in the film thickness unevenness inspection device 1, the H tilt mechanism 56 changes the inclination of the H-light 51a with respect to the optical path from the substrate 9 to the line sensor 41, and the selection filter 5 can be adjusted with good precision. The transmission wavelength band of the reflected light from the substrate 9 (i.e., the selected wavelength band), and the characteristics of the material and the film thickness of the film 92 are adjusted to select the wavelength band, thereby improving the accuracy of detecting the film thickness. The thickness unevenness inspection device makes it possible to adjust the transmission wavelength band of the filter of the other device even if there is a manufacturing error in the transmission wavelength band of the filter and the optical device (for example, 'the error at the center wavelength #3 nm). It is matched with the selection of the chopper with the shortest central wavelength, and the transmission wavelength band of the selected chopper can be made into a good precision, which can remove the individual defects of the plurality of devices, and achieve stable inspection. Wavelength V switching mechanism In Fig. 5, each of the plurality of filters 51 is provided with a filter 3] 2 ΧΡ / invention manual (supplement) / 95-06 / 95107391 21 1276775 is a tilt mechanism 56, by changing the inclination of each optical filter 51 to the optical path Degree The transmission wave and the long band of each of the filters 51 can be adjusted in accordance with the characteristics of the film 92. The film thickness unevenness inspection device lit continuously checks the film thickness unevenness of the plurality of substrates 9 of the same type, and the two used for the inspection. The transmission wavelength band of the filter & 1 can be adjusted separately, so that the inclination of the filter 51 can be changed only when the first substrate J is inspected, and thereafter the inclination is not required to be changed. Thus, the film thickness is not When the film inspection apparatus 1 continuously inspects the film thickness unevenness of the plurality of substrates g, the operation of adjusting the transmission wavelength band of the filter 51 can be simplified in the wavelength band switching mechanism 5, and the filter 51a is selected to face the γ direction ( The filter rotating shaft 55 from the direction in which the linear light of the light emitting portion 3 extends) is rotated centrally, and the linear light can be selected for filtering over the entire length of the linear light incident on the filter 51a. The incident angle of the device 513 is maintained at a central portion and both end portions of the linear light, so that slight shifts in the transmission wavelength band due to slight differences in the incident angle of the selection filter 51a can be prevented. It can prevent the detection accuracy of the film thickness unevenness from being lowered. In the film thickness unevenness inspection device 1, the line sensor 14 receives the reflected light from the substrate 9 to detect unevenness in film thickness. Therefore, even if the substrate 9 does not have light transmittance, the film thickness unevenness can be appropriately checked. In addition, when the light from the light emitting portion 3 is inclined and irradiated onto the substrate 9, the light emitting portion 3 and the light receiving portion 4 can be prevented from overlapping due to the approaching side and the reflecting side optical path, and the light emitting portion can be prevented. The configuration and arrangement of the light-receiving portion 4 are complicated. The following is a description of the film thickness unevenness inspection 1& FIG. 10 shows the configuration of the film thickness unevenness inspection device 1a. In the film thickness unevenness inspection device 1a, as shown in FIG. 10, a filter for rotating the filter wheel 52 with the filter rotating shaft 55a as the center of the 312XP/invention specification (supplement)/95-〇6/95107391 22 1276775 is provided. The tilt mechanism 56a replaces the filter tilt mechanism % of the film thickness unevenness inspection device i shown. The if 3 is the same as in Fig. 1, and the same symbols are given in the following description. As shown in Fig. 10 =, in the band switching mechanism of the film thickness unevenness inspection device la, the filter-type tilting mechanism 56a is attached to the opposite side of the filter rotating motor 53 filter wheel 52, and the filter tilting mechanism 56 & Centering on the filter rotating shaft 55a toward the center, the clock rotation motor 53 and the filter wheel 52 are also rotated by the clockwise rotation in Fig. 1 . In this way, the cry 51a can be selected simultaneously with the other filters 51 (i.e., the five filters 51 are integrally tilted), α °. The tilt angle -degree' of the optical path from the substrate 9 to the line sensor 41 is also changed to the selected wavelength band (i.e., the transmission wavelength band of the filter 51a for the reflected light from the substrate 9 is selected). In the second embodiment, the flow rate of the film inspection apparatus is roughly the same as that of the first embodiment, and will be described below with reference to Figs. 5 and 6 . The film thickness unevenness inspection device la checks the film thickness unevenness of the film 92, and the light-receiving tilt mechanism 56a automatically changes the selection filter band to select the wavelength band (step sn). Next, the substrate 9 and the object: the moving light emitting portion 3 emits white line-shaped color light and irradiates it to the linear irradiation region of the soil (steps S12 and S13). The light exiting portion η is first reflected on the upper surface 91 of the substrate 9, and the transmission filter is selected as the filter 5, thereby taking only the light of the strip and latching the JL track, ^ accepting from the light receiving portion 4 , line sensor 41, leather length ▼ switch mechanism 5 selects the wavelength of the light' to obtain 312XP / invention book (supplement he moved 95丨〇 739) 23 1276775 reflection from the linear illumination area on the substrate 9 The light is sent to the image generation unit S15 of the inspection unit 7 in the intensity distribution of the selected wavelength band. / w .丄4 Unevenness of film thickness inspection φ, + # , in clothing 1a, at the end of the stage 2 inspection position: step (10) 'repeatedly take the line from the substrate 9: by which to get from above 91 The reflected light is at an intensity distribution of the wavelength π (steps S14 to S16). Thereafter, the movement of the US plate 9 and the stage 2 and the irradiation of the illumination light are stopped (step s (7), and the film of the film 92 formed by the film thickness unevenness detecting portion (4) d is formed on the upper surface 91 while the image is emphasized. Thickness unevenness (step "丨,. = After detecting the first film thickness unevenness", the wavelength band switching mechanism 5 switches the selection of the ancestors 51a to change the selected wavelength band (steps, s23i), and returns to step SU, as necessary. After changing the selection filter & tilt, the second film thickness unevenness is detected (steps SU to S17, s2i to % qi, based on the first "" and the second inspection result, the substrate 9 is finally detected. The film of the film 92 formed by 91 is inspected for the film thickness unevenness test. I. The thickness of the film is not uniform: the second film thickness is not uniform, and the precision is good. (4) From the light shot "3 (4) on the substrate 9 angle _ is set to 50. Above 65. Below, it is possible to prevent the film thickness from varying and the film thickness is uneven. The mouth is used to detect a small film thickness unevenness inspection device with good precision. In the filter tilt mechanism, select 312XP / invention manual (supplement) / 95-06/95107391 24 1276775 chopper 51a pair The inclination of the optical path is changed, and the transmission wavelength band (i.e., the selected wavelength band) of the selective filter 51a for the f-light 9 from the substrate can be adjusted with good precision, as a result of the first embodiment. 4 inch j · raw adjustment of the distance wavelength band, the detection accuracy of the film thickness unevenness can be improved. Further, in the multi-layer film thickness unevenness inspection device, the wavelength can be selected with good precision. The thickness unevenness inspection device h is also particularly suitable for detecting the uneven coating of the coating formed by the coating (four) liquid. "The thickness of the soil film is unevenly checked. The wavelength band switching mechanism 5 of the layer la, in particular, one filter The optical device tilting mechanism 56a can change the inclination of the complex filter 51 to the body, so that the transmission wavelength can be adjusted for the complex (four) optical device 51. Further, in the first embodiment (fourth), the filter is selected. The optical device W is rotated by the filter rotating shaft 55a in the Y direction (the direction in which the linear light from the light emitting portion 3 extends), and the linear light can be selected for the entire length of the linear light. The incident angle of the filter 51a is kept constant, and uneven film thickness can be prevented. The measurement accuracy is lowered. ', the film thickness unevenness inspection device la' is the same as the i-th embodiment, and receives the reflected light from the substrate 9 to detect unevenness in film thickness. Therefore, even when the substrate is translucent, it is appropriate. In addition, the light of the projection 3 is irradiated onto the substrate 9 to prevent the configuration and arrangement of the light receiving unit 4 from being complicated. The inspection apparatus 1b is not: the composition of the film thickness unevenness inspection apparatus 1b. As shown in Fig. U", the sub-inhomogeneity inspection apparatus 1b is in addition to the film thickness unevenness inspection shown in Fig. 2 (3) invention specification (supplement) / 95_〇_ 739] 25 1276775 ι is further provided with a polarizer 6, which is disposed in the optical path from the substrate 9 to the wavelength band switching mechanism 5, and is reflected by the light from the film 92. Medium, selectively transmitting s-polarized light. The process of checking the film thickness unevenness by the film thickness unevenness inspection device 113 is roughly the same as that of the first embodiment, and will be described below with reference to Figs. 5 and 6 . When the film thickness unevenness inspection device 1b is uneven in the film thickness of the inspection film 92, first, the lucer tilting mechanism 56 (see FIG. 3) adjusts the inclination of the filter and the optical device, and adjusts the selected wavelength band. (Step su). Then, the substrate 9 and the stage 2 start to move, and the light emitting portion 3 emits linear white light and illuminates the linear irradiation region on the substrate 9 (steps s 12 and s 13 ). . . Light, the light emitted from the output 3 is reflected on the upper surface 91 of the substrate 9, transmits the polarization "straw to extract only the S-polarized light. Then 'transmits the selection filter 51a of the wavelength band switching mechanism 5, so that only the selection of the s-polarized light is taken out. The light of the wavelength band is then introduced into the light receiving unit 4. In the light receiving unit 4, the line sensor Ο receives the s-polarized light from the selected wavelength band of the wavelength band switching mechanism 5, and the reflection reflected by the linear irradiation region on the substrate 9. In the light, the intensity distribution of the s-polarized light in the selected wavelength band is obtained, and this is sent to the image generating unit 71 of the inspection unit 7 (steps S14 and S15). The film thickness unevenness inspection device 1b is used for the carrier. Before the stage 2 reaches the end inspection position (step S16), 'the intensity distribution of the reflected light from the linear illumination area on the substrate 9 is repeatedly obtained, whereby the S-polarized light is obtained in the selected wavelength band among the reflected light reflected by the upper surface 91. The intensity distribution (step S16). Thereafter, the movement of the substrate 9 and the stage 2 and the irradiation of the illumination light are stopped (step S17), and the image generation unit 71 generates the emphasized image, and the 312XP/invention specification (supplement) ) /95-06/95107391 26 1276775 The thickness non-thickness unevenness detecting unit 72 detects the film 92 formed on the upper surface 91 (steps S21 and S22). Pendulum: ί After the film thickness unevenness detection is performed, the wavelength band switching mechanism 5 switches the selection. Guangjie 51a changes the selected wavelength band (steps S23, S231), returns to steps si, i, automatically changes the inclination of the selection filter 5ΐ& if necessary, and then 'detects the second film thickness unevenness (step S11~) Sn, S21 to S23) Then, based on the results of the first and second inspections, the film thickness of the film 92 formed on the substrate 91 is finally detected to be uneven, and the film thickness unevenness inspection device 1b is completed. Fig. 12 shows the relationship between the film thickness and the reflectance of the film 92 formed on the upper surface 91 of the substrate 9. The line 121 in Fig. 12 shows the film thickness unevenness inspection device of the present embodiment. The reflectance of the same condition of lb (that is, the reflectance of s-polarized light). Further, the line 122 indicates a device in which the polarizer 6 is omitted from the film thickness unevenness inspection device 1b (that is, the film thickness of the i-th embodiment is not Both check the reflectance of the device 1) under the same conditions (ie, for light that is not polarized) The reflectance of "hereinafter referred to as "non-polarized light").), line 123 indicates the same as the device provided with other polarizers which only selectively transmit p-polarized light instead of polarized light 6 of the film thickness unevenness inspection device 1 b. The reflectance of the condition (ie, the reflectance to p-polarization). Lines 121 to 123 indicate the reflectance of light for a wavelength of 55 Onm. Fig. 13 shows the change in reflectance when the film thickness of the film 92 is changed by only 1 nm. In Fig. 13, lines 201 to 203 correspond to lines 121 to 123 in Fig. 12, and indicate fluctuations in reflectance with respect to S-polarized light, unpolarized light, and p-polarized light, respectively. 312ΧΡ/Invention Manual (Supplement)/95·06/95107391 27 1276775 As shown in Figure 13, the reflectance is much larger than the reflectance for s-polarized light and p-polarized light, so the film thickness The unevenness is detected by 1 1 it and τ, and the light received by the light receiving unit 4 is polarized by the polarizer 6 to be light, and the film thickness is unevenly detected according to the intensity distribution of the S-polarized light, and = representative of the same sensitivity is obtained. In the film thickness unevenness inspection device 1b, the pixel value of the film thickness variation is improved, and the film thickness unevenness is detected with better precision. The thickness unevenness inspection device lbt is disposed between the substrate and the device 41 (i.e., in the optical path of the light receiving side), thereby preventing the influence of heat caused by the polarizer 6. Further, the arrangement of the polarizer 6: between the board 9 and the wavelength band switching mechanism 5 can increase the degree of freedom of the polarizer 6, thereby preventing the complication of the device. The film thickness unevenness inspection device 1c according to the fourth embodiment of the present invention is shown in Fig. 14 and shows the configuration of the film thickness unevenness inspection device & In the unevenness inspection device, the configuration of selectively transmitting s-polarized light is the same as that of Fig. u, and the same reference numerals are given to the following description. The third two use! The process of checking the unevenness of the film thickness by the inspection apparatus 1C is the same as that of the younger brother. = uneven inspection device 丨. In the middle, the light emitted from the light emitting portion 3 emits the selected filter of the wavelength band switching mechanism 5; a__ takes out the light of the selected wavelength band and guides it to the light receiving portion 4. In the text section 4, the condensing lens 42 will be selected from the oil selection filter * 夕水; i from the wavelength ▼ switching mechanism 5 312XP / invention manual (supplement) / 95-06/951073 91 First, it is first directed to the polarizer 6, and the polarizing light 6 28 1276775 is polarized to be imaged onto the line sensor 41, and the second detection film 92 is the same as that of the third embodiment. a knife cloth to check the film thickness is uneven, and can be more accurate

Uneven thickness. Further, the polarizer 6 is disposed between the substrate 9 and the sensor 41 (i.e., in the light-receiving side optical path), so that the influence of the light, the portion 3 on the heat caused by the polarizer 6 can be prevented. In the film thickness unevenness inspection device, in particular, the polarizer 6 is disposed between the condensing lens 42 and the line sensation 41. Thus, the size of the polarizer 6 can be made to correspond to the linear light of the condensing lens 42 . Therefore, the polarizer 6 is miniaturized in comparison with the polarizer 6 disposed on the front side of the collecting lens a (e.g., in the optical path from the light emitting portion 3 to the collecting lens 42).

To take out only the light. Next, the film thickness unevenness inspection apparatus U of the fifth embodiment of the present invention will be described. Fig. 15 shows the configuration of the film thickness unevenness inspection device 1d. As shown in the figure, the uneven thickness of the film is examined, and the polarizer 6 that selectively transmits the s-polarized light is disposed in the pupil between the cylindrical lens 33 of the light emitting portion 3 and the substrate 9. Other configurations and figures In the following description, the film thickness unevenness inspection device 1 is used. (1) The process of checking the film thickness unevenness is the same as that of the third embodiment. The film thickness unevenness inspection device Id is from the light emission portion. The light transmission polarization of 3 is 6 to take out only the S-polarized light and guide the substrate 9 to be reflected on the upper surface 91 of the substrate 9. This s-polarized light is transmitted through the selection filter 51a of the wavelength band switching mechanism 5, and only the selected wavelength can be taken out. The light is then guided to the light receiving unit 4. In the light receiving unit 4, the collecting lens 42 causes light from the selected wavelength band of the wavelength band switching mechanism 5 312XP/invention specification (supplement)/95_〇6/95107391 29 1276775 The light is collected and imaged to the line to receive the light. In the film thickness unevenness inspection device Id, the intensity distribution of the S-polarized light is inconsistent with the thickness of the third embodiment (4). Good off: The film thickness of the film 92 is uneven. In particular, check the table (4) 0 film 92 (substrate 9 When the scattered light included in the upper reflected light is not uniform to the thickness of the substrate 9 of the film 92) which is 1% or more in the case of the normal reflection, 酉 = 6 is between (4) the output portion 3 and the substrate 9 (that is, the exit side light) In the middle of the process, compared with the substrate between the substrate 9 and the line sensor 41 (ie, the total optical path:), the film thickness unevenness can be detected with better precision. Film thickness unevenness inspection according to the sixth embodiment of the present invention: Fig. 16 shows the configuration of the film thickness unevenness inspection device le. The thickness unevenness is two: the light from the light emitting portion 3 is placed on the substrate 9 The angle of incidence is different from that of the film thickness unevenness inspection device 1. ^ is iO or more, and is (hereinafter, 3 〇 in the present embodiment.) The other components are the same as in Fig. 1 'The same symbol is given in the following description. As shown by =, the film thickness unevenness inspection device and the first embodiment are opposite to each other to hold the substrate 9; the light emitting portion 3, and the surface t is projected on the substrate 2 of the stage 2 The upper well formed by the light transmissive film 92 is only the class/wavelength band switching mechanism 5, which is switched between the reverse band gate from the substrate 9 and n = the wavelength band of the selected band. Wavelength mechanism, (4) 彳 accept transmission wavelength band switching distribution; moving mechanism 21, 22: light strong (four) ^ for private moving stage 2; inspection department 7, its root 312XP / invention manual (supplement) / 95 〇6/95ι〇739] ^ 1276775 The film thickness of the inspection film 92 is uneven according to the strong sound of the light obtained by the light receiving unit 4, and the control unit 8 is used to control the configuration. The wavelength band switching mechanism 5 is the same as the first real band band energy 夂 夂 夂 四 四 四 四 四 四 四 “ “ “ “ “ “ 知 知 知 知 知 知 乐 知 知 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐 乐Selectively transmitting a plurality of mutually different narrow iso-R R m skin length τ lights; a disk-shaped filter wheel 'for holding 5 filters 51; and a filter rotation motor 53 for the filter wheel 52 rotation. The wavelength band switching mechanism 5, the filter rotation motor 53 rotates the filter wheel 52, and the selection filter 51a disposed in the optical path from the light emitting portion 3 to the light receiving portion 4 in the plurality of filters 51 Switch to other filters 51. The wavelength band switching mechanism 5 is further provided with a filter 仏 tilt mechanism 56 (see Fig. 3) for changing the inclination of the selection filter 51 & for the optical path from the substrate 9 to the light receiving portion 4. As shown in FIG. 2, the wavelength band switching mechanism 5 is provided with a filter tilting mechanism 5 for the five filter elements 51. In this manner, each of the filters 51 can be changed with respect to the other filters 51. The inclination of Cheng. Similarly to the first embodiment, the light emitting unit 3 includes a light source 3j that emits white light (that is, light including light of a "multiple wavelength band corresponding to a plurality of filters 51 to be described later). A quartz rod 32 that converts light from the prime-lamp 31 into linear light; and a cylindrical lens 33 that guides the linear light from the quartz rod 32 to the substrate 9. The light receiving unit 4 further includes a line sensor 41 in which a plurality of CCDs are arranged in a straight line shape, and a collecting lens 4 2 ′ which is provided in the line sensor 41 and the selection filter 51 a of the wavelength band switching mechanism 5 between. 312XP / invention manual (supplement) / 95-06 / 95107391 31 1276775, 'Yi Li (four) thickness unevenness inspection device le check the uneven thickness of the film = Ming: use the film thickness unevenness inspection device le check the film thickness The flow of the process is the same as that of the first embodiment, and will be described below with reference to FIGS. 5 and 6 . Film thickness: Both: Check the thickness of the film (10) on the upper surface of the substrate 9 to check the film thickness of the film (10). First, the optical path tilting mechanism 5 β is necessary to change the filter 2 5 = tilt, and adjust the selected wavelength band ( The step is 1), and then the load Γ 2 starts moving from the inspection start position shown by the solid line in Fig. 16 (step

The f' is opposite to the upper surface 91 of the substrate 9 by an incident angle of 3 。. The linear light is irradiated to the irradiation area of the surface 91, and the selection filter 5ia passes the light from the substrate 9; it is considered to contain only the selected wavelength band, and then the line sensor detects the illumination from the substrate 9. The intensity distribution of the reflected light of the region in the selected wavelength ▼ (steps S13 to S15). The thickness unevenness inspection device le is synchronized with the movement of the stage 2, and the intensity distribution of the reflected light from the irradiation region on the substrate 9 is repeated. When the carrier and the port 2 reach the two-point chain line in FIG. At the time of the position, the movement of the stage 2 and the irradiation of the illumination light are stopped (steps si6, $(7). After the absence of the highlighted image of the upper surface 91, the film thickness unevenness on the upper surface 91 is detected (steps S21, S22).煜;:!?: After the first film thickness unevenness, the wavelength band switching mechanism 5 switches the selection filter band 51a to change the selected wavelength band (steps S23 and s23i), and returns to step = ii 'optionally change selection The inclination of the optical device 51a is followed, and the second film thickness unevenness is detected (steps su~sn, S2i~s(8). After the defect, the second and second substrates 312XP/ are finally detected based on the first and second inspection results. In the specification (supplement)/95-06/95107391 32 1276775, the film thickness of the film 92 formed on the film 91 is uneven, and the film thickness unevenness detection by the film thickness unevenness inspection device le is completed. In the thickness unevenness inspection device le, the light exiting portion 3 = the incident angle of light incident on the substrate 9 <9 2 As shown in Fig. 7, the film thickness unevenness inspection device 1 of the first embodiment in which the angle of incidence 0 1 is 60 is smaller than the maximum thickness of the film thickness (i.e., from Since the difference in film thickness before the inclination of the line 102 becomes large is extremely small, the range of the low sensitivity region near the maximum point becomes small. In this way, the film thickness unevenness in which the film thickness variation range is relatively large is detected. The film thickness can be prevented from being included in the low-sensitivity region. In other words, at least a portion of the film thickness variation range is included in the high-sensitivity region between the mutually adjacent low-sensitivity regions and detecting uneven film thickness. In this way, the incident angle of the light from the light-emitting portion 3 to the substrate 9 is reduced by the film thickness unevenness inspection device, and the thickness is less than the incident angle in the film thickness unevenness inspection device. In the following, it is possible to prevent the entire thickness variation of the film thickness from being included in the low-sensitivity region when the film thickness of the film is relatively large, and the film thickness unevenness inspection device le 9 m is set to ίο. Above, The proximity of the light-emitting portion 3 and the light-receiving portion &' causes an overlap between the human-emitting side and the reflected-side optical path, thereby preventing the configuration of the σ-out portion 3, the light-receiving portion 4, and the wavelength band switching mechanism 5 from being complicated. In this case, the film thickness unevenness inspection device let, from the light emission (4) 3, the incident angle θ 2 incident on the substrate 9 is set to 1 〇. The above 4 〇. Below, 312XP / invention manual (supplement) / 95_06 / 95H) 7391 1276775 When the structure of the device is complicated, the film thickness variation is relatively large, and the thickness of the film is uneven. The range of the film thickness variation can be prevented from being included in the low sensitivity or the film thickness unevenness can be reliably detected.祯Γ"outer thickness unevenness inspection device 1e' wavelength band switching mechanism 5=several choppers 5 switching between mutually different complex wavelength bands selection wavelength=1 can be appropriately changed when film thickness unevenness detection In the low-sensitivity region of the film thickness, it is possible to detect uneven film thickness which is relatively large in film thickness variation. The film thickness unevenness inspection φ e is also the same as that of the i-th embodiment, and is particularly suitable for detecting film thickness unevenness (i.e., coating unevenness) of the film 92 formed by coating/coating. In the same manner as in the first embodiment, in the same manner as in the first embodiment, the filter 11a is switched to the other filter 51, and the reflection from the substrate 9 is easily changed by the light receiving unit 4. The wave of light is again: that is, the wavelength band is selected). Further, the line sensor 41 receives the linear light from the light emitting portion 3 in synchronization with the private movement of the substrate 9, so that the incident angle 02 at which the light is incident on the substrate 9 can be kept constant over the entire surface 91, thereby enabling The detection process of the film thickness unevenness by the film thickness unevenness detecting unit 72 is simplified. • In the wavelength band switching mechanism 5, as in the third embodiment, the filter is tilted to select the filter 51a for the tilt of the optical path, and the filter can be adjusted with good precision. 51a is a transmission wavelength band (ie, a selected wavelength band) for the reflected light from the substrate 9. As a result, by selecting the wavelength band in accordance with the characteristics of the film 92, the detection accuracy of the film thickness unevenness can be improved. Further, in the plurality of film thickness unevenness inspection devices, the selected wavelength bands can be made uniform with good precision. 312XP/Invention Manual (Supplement)/95-06/95107391 34 1276775 In the wavelength band switching mechanism 5, the filter of the undulator 51a is selected so as to face the γ direction (the direction in which the linear light of the emitting portion 3 extends) The optical axis of rotation of the optical device rotates, and the incident angle of the linear light to the selection filter 51a is kept constant across the entire length of the linear light incident on the filter 51a. In this way, in the central portion and both end portions of the linear light, it is possible to prevent slight variations in the incident angle of the filter 51a, and to cause some slight shift in the transmission wavelength band to prevent uneven film thickness. Detection accuracy is reduced. Further, in the case of the film thickness unevenness inspection device 16, since only a single filter is used in almost all of the cases, the film thickness can be detected with good precision, and thus the wavelength band switching mechanism 5 can be replaced. Steps S23 and S231 of FIG. 6 may also be omitted. Next, the film thickness unevenness inspection apparatus according to the seventh embodiment of the present invention is referred to as Z. Fig. 17 shows a configuration of a film thickness unevenness inspection device lf. In the film thickness unevenness inspection device 1 f, a filter tilt mechanism 56a is provided as shown in Fig. 7 in place of the filter tilt mechanism 56 of the film thickness unevenness inspection device 图e (not shown in Fig. 3). The filter tilting mechanism 56a rotates the filter wheel 52 around the filter rotating shaft 55a. The other configurations are the same as those in Fig. 16, and the same reference numerals are given below. The configuration of the filter tilting mechanism 56a and the process of checking the film thickness unevenness by the film thickness unevenness inspection device lf are the same as those in the second embodiment. In the film thickness unevenness inspection device 1 f, as in the sixth embodiment, the incident angle θ 2 at which the light from the light emitting portion 3 enters the substrate 9 is set to ι 〇. Above 40. In the following, it is possible to prevent the constituting of the device from being complicated, and to prevent variations in the film thickness from being large, and to prevent the film thickness from changing as a whole. 312XP/Invention Manual (Supplement)/95_〇6/95107391 35 1276775 is contained in the low-sensitivity area, and can be used to detect uneven film thickness. In the film thickness unevenness inspection apparatus If, as in the second embodiment, the filter tilting mechanism 56a can adjust the transmission wavelength band of the selective filter 51a for the reflected light from the substrate 9 (i.e., the selected wavelength band) with good precision. . As a result, the wavelength band can be adjusted by adjusting the characteristics of the film 92, and the detection accuracy of the film thickness unevenness can be improved. Further, in the plurality of film thickness unevenness inspection devices, the selected wavelength bands can be made uniform with good precision. Further, the "filtering and tilting mechanism 56a" can integrally change the inclination of the complex filter 51 with respect to the optical path, so that the mechanism for adjusting the transmission wavelength band by the complex filter 51 can be simplified. θ Next, the film thickness unevenness inspection device according to the eighth embodiment of the present invention! Description. Fig. 18 shows the configuration of the film thickness unevenness inspection device 1g. As shown in Fig. i8, the film thickness unevenness inspection device 1g is further provided with a polarizer 6 in addition to the film thickness unevenness detection shown in Fig. 16, and the polarizer 6 is disposed on the substrate 9 to the wavelength band. In the optical path of the mechanism 5, the reflected light from the film 92 is selectively transmitted through the transmission S polarization first. The other configuration is the same as that of Fig. J 6 , and the same reference numerals are given to the following description. In the film thickness unevenness inspection device 1, R. is the same as the third embodiment, and the transmission polarization is 6 and the first polarization is S-polarized in the light-receiving portion 4^, and the intensity of the S-polarized light is The distribution inspection is very difficult to report 09 ^ one film is uneven, and can be more good in the production of Huan /, F, thick and uneven. In addition, between the linear and linear sensors (i.e., disposed on the substrate 9 and the emitting portion 3 to the polarizer 6, two first: first private), it is possible to prevent the influence of the heat generated by the light. Further, the squeezing device 6 is disposed on the substrate 9 to be inserted into the cymbal; in the case, between the yaw 9 and the wavelength band switching mechanism 5, the 312XP/invention specification (supplement)/95-〇6/951σ739ι 36 Ϊ276775 can be improved. The degree of freedom of the polarizer 6 thus prevents the complication of the device configuration.

Next, the film thickness unevenness inspection apparatus U of the ninth embodiment of the present invention will be described. Fig. 19 shows the configuration of the film thickness unevenness inspection device 1h. In the 丄 film thickness unevenness inspection device 1h shown in Fig. 2, the light modulatingly transmitting the S-polarized light is disposed between the condensing lens 42 of the luminescent portion 4 and the line sensor 4j. Process. The other configuration is the same as that of Fig. 18, and the same reference numerals will be described below. In the film thickness unevenness inspection device 1h, as in the eighth embodiment, the film thickness unevenness is checked based on the intensity distribution of the S-polarized light, and the film thickness unevenness of the film 92 can be loosened with better precision. Further, the polarizer 6 is disposed between the substrate 9 and the line sensor 41 (i.e., in the light-receiving side optical path), so that the influence of the light-emitting portion 3 on the heat caused by the polarizer 6 can be prevented. In the film thickness unevenness inspection device 1h, the polarizer 6 is disposed between the condensing lens and the line 41, and thus the polarizer $ can be miniaturized as in the fourth embodiment. • Next, the film thickness unevenness inspection according to the tenth embodiment of the present invention will be described. Fig. 20 shows the configuration of the film thickness unevenness inspection device h. - such as ^: two::. : Thickness unevenness inspection device "Selective transmission "Ultra-Vibration. Wuzhen is disposed between the cylindrical lens 33 of the light-emitting portion 3 and the substrate 9. The other configuration is the same as that of Fig. 18' The film thickness unevenness inspection device U is the same as the eighth real state, and (iv) the intensity distribution of the polarized light is examined to be uneven in film thickness, and the film thickness unevenness of the film 92 can be made better. ^ π又双双子]Specially 丨J疋' inspection surface is formed with a relatively thick 312ΧΡ/invention specification (supplement)/95-06/95107391 1276775 film 92 (for example, scattered light contained in the reflected light on the substrate 9) When the thickness of the substrate 9 of the film 92) having a regular reflection light ratio of 1% or more is not uniform, the polarizer 6 is disposed between the light emitting portion 3 and the substrate 9 in the fifth embodiment (ie, In the exit side optical path), compared with the sensor 4! (ie, 6_9 on the light-receiving side and the first-in-one in the linearity), the film thickness unevenness can be detected with better precision. Description of Embodiments However, the present invention is not limited to the above-described Besch-shaped sorrow, and can be variously changed. : Column::: Table 2 The light emitting portion 3 and the belt = 矣 mechanism may be relatively moved, and the stage may be fixed so that: 1 state = the movable portion 4 and the wavelength band switching mechanism 5 are in the light emitting portions 3 fixed to each other. The array is also arranged in a linear shape instead of the quartz rod 32, and the optical fiber f arranged in a straight line is made to transmit the light from the halogen lamp 31 through the optical fiber array to be converted into linear light. The complex 31 and the quartz rod 32. 'First light source, the domain (four) plain lamp thickness unevenness inspection won the +. Will cause the substrate 9: two: = Deng 31 out of the light, when included, in the (four) light 31 ;::9=the light filter of the light band of the wavelength band affected by good influence, etc. The other is not to transmit the wavelength ^ Μ ^ 卜, when the film 92 on the upper surface 91 of the substrate 9 is transmissive to infrared rays, On the 3rd, instead of shooting the source of the infrared light, the light is emitted, and the white light is emitted.

The light on the substrate 9 is incident on the upper surface of the lens, and the upper surface of the lens is kept constant, so that the film 312XP / invention manual (supplement) / 95.95107391

Jj?S 1276775 Thickness unevenness detection is simplified. 'On the moving line sensor 41, = Geisha prefers to use the reflected light relative to the substrate 9, and the linear light from the light exit portion 3 can be set to 2-under Two: shorten the shooting time of the substrate 9, also on the second: instead of sensing a complex number of choppers 51 " two" 5: change the selected wavelength band is not limited to the cut of the multiple light source on the light injection part Λ Λ The light source light source of the complex wavelength band is controlled by the switching from the ++φ long band switching mechanism 5 to control the wavelength band of the light emitted from the first emitting portion 3. The film thickness unevenness inspection device in the form of the measuring portion is Through the film thickness unevenness inspection visual inspection: Curtain and the like:: The film thickness of the film 92 is uneven 'but can also be seen by the operator::: The above-mentioned 91 second-dimensional image of the kg display, compare it with the reference I# image' In order to detect the unevenness of the film thickness, the filter tilting mechanism may be formed other than the above-described configuration, and the filter tilting mechanism 56 is separated from the third to sixth, eighth, and eighth to first embodiments. The middle of the filter can be connected to the stepping motor (stepp i^ng motor) factory on each filter. The rotation of the stepping motor is such that the direction in which the filter 5i rotates can be, for example, the counterclockwise direction in Fig. 3. The film thickness unevenness in the third to fifth, eighth, and eighth to tenth embodiments In the scanner device, the viewpoint of receiving the S-polarized light by the line sensor 41 is as follows: 3〇XP/Invention Manual (Replenishment y9546/9^73^ 1276775: Light can be arranged from the light emitting portion 3 to the line The sensor "may be provided, for example, between the selection filter 51" and the first lens 42. =1 to the film thickness unevenness inspection in the fifth embodiment, it is also possible to enter one or two ϋ: Λ 2 The light emitting portion 'is incident on the substrate 9 at an incident angle of 1 〇. The light from the adjacent light is incident on the second light receiving portion, and the second light receiving portion receives the reflected light reflected from the substrate 9 from the second light. In addition, the film thickness unevenness is detected with high precision, and the film thickness unevenness is greatly changed. The film thickness unevenness inspection device of the above embodiment can be used for other films, for example, the substrate 9. The unevenness of the insulating film and the conductive film may be detected by methods other than coating the coating liquid, such as evaporation and chemistry. Gas deposition method (CVD: Chemicai '

Deposition), a film formed by sputtering (spuUering). Further, the film thickness unevenness inspection device can also be used for inspection of a film thickness unevenness of a film formed on another substrate such as a semiconductor substrate. Although the invention has been described in detail, it has been described by way of illustration Therefore, it is to be understood that a variety of variations can be made without departing from the scope of the invention. [Brief Description of the Drawings] Fig. 1 shows a configuration of a film thickness unevenness inspection device according to the first embodiment. Fig. 2 shows a wavelength band switching mechanism. Figure 3 is an enlarged view of the vicinity of the selection filter. Figure 4 shows the relationship between the angle of inclination of the filter and the offset of the transmission wavelength band 312XP / invention specification (supplement) / 95-06 / 95107391 40 1276775. Fig. 5 is a flow chart for checking the unevenness of the film thickness. Fig. 6 is a flow chart for checking uneven film thickness. Fig. 7 shows the relationship between the film thickness and the reflectance. Fig. 8 shows the relationship between the film thickness and the reflectance variation. Fig. 9 is a view showing the relationship between the film thickness and the reflectance of the film thickness unevenness inspection apparatus of the comparative example. Fig. 10 shows the configuration of the film thickness unevenness inspection device of the second embodiment. Fig. 11 shows the configuration of the film thickness unevenness inspection device of the third embodiment. Fig. 12 shows the relationship between the film thickness and the reflectance. Fig. 13 shows the relationship between the film thickness and the reflectance variation. Fig. 14 shows the configuration of a film thickness unevenness inspection device according to a fourth embodiment. Fig. 15 shows the configuration of a film thickness unevenness inspection device according to a fifth embodiment. Fig. 16 shows a configuration of a film thickness unevenness inspection device according to a sixth embodiment. Fig. 17 shows the configuration of a film thickness unevenness inspection device according to a seventh embodiment. Fig. 18 shows the configuration of a film thickness unevenness inspection device according to the eighth embodiment. Fig. 19 shows the configuration of a film thickness unevenness inspection device according to a ninth embodiment. Fig. 20 is a view showing the configuration of a film thickness unevenness inspection device according to the first embodiment. [Description of main component symbols] 卜la~1 j Film thickness unevenness inspection device 12 122, 123, 2 (Π, 202, 203 2 stage 21 moving mechanism 211 motor 312XP / invention manual (supplement) / 95- 06/95107391 41 1276775 212 Guide 3 Light exit part* 301 point. 302 Line 31 Halogen lamp 32 Quartz rod 33 Cylindrical lens 4 Light-receiving part '41 Line sensor 42 Concentrating lens 5 Wavelength band switching mechanism 51 Filter 51a Select Filter 52 Filter Wheel 521 Opening | 53 Filter Rotary Motor 54 Filter Frame 55 ^ 55a Filter Rotary Axis -56, 56a Filter Inclination Mechanism .561 Micrometer 562 Spring 6 Polarization 7 Inspection Unit 71 Image generation unit 312XP/Invention manual (supplement)/95-06/95107391 42 1276775 72 Film thickness unevenness detecting unit 8 Control unit 9 Substrate 90 Optical path 91 Upper surface 92 312XP/Invention manual (supplement)/95-06 /95107391 43

Claims (1)

I276775 The scope of the patent application is as follows: 1. A film thickness unevenness inspection device for inspecting the film thickness unevenness of the film formed on the substrate, comprising: a holding portion for holding the substrate; and a light emitting portion; The main surface formed by the light transmissive film of the above substrate is -65 or more. The following incident angle emits light; the specific light reflected by the main surface of the substrate is received, and the intensity distribution of light from the specific wavelength band of the main surface is obtained, and the long band switching means is The above-mentioned wavelength band is switched between mutually different complex wavelength bands. 2. The film thickness unevenness inspection device according to claim 1, wherein the light emitting portion emits light having the plurality of wavelength bands, and the wavelength band switching means includes: a plurality of filters; The above-mentioned plurality of transmissions are respectively allowed, and the I~TG filter switching mechanism is switched from the above-mentioned plurality of choppers to the choppers in the optical path of the above-mentioned sensor, and is switched to other filters. The optical device is used to change the specific wavelength band described above. 3. The film thickness unevenness inspection device according to item 2 of the patent application scope further includes: a first filter device tilting mechanism, wherein the filter is applied to the optical path in the plurality of choppers The inclination of the formation; the second filter 'optical device tilting mechanism' is in the above-mentioned plural filter and optical device, and the first filter is described in the above 312XP/invention manual (supplement V95-〇6/95l〇739) 44 Ϊ276775 Changing the inclination of the second filter to the optical path, and moving the mechanism 'in a predetermined moving direction along the main surface of the substrate,' making the holding portion relative to the light emitting portion and the sense The light-emitting portion is provided with a light source that emits light of light combining the plurality of wavelength bands, and a light system that converts light from the light source along the same surface of the main surface a linear light perpendicular to the moving direction, and the main surface; the sensor is a line sensor, and the movement of the holding portion is repeated to repeatedly detect that the linear light is irradiated onto the irradiation area of the substrate Reflected on The intensity distribution of light in a specific wavelength band. 4. The film thickness unevenness inspection device according to the scope of the patent application 帛 2, further comprising: a Balu Diffuser tilt mechanism for changing the above complex (four) light The inclination of the optical path to the optical path; and the moving mechanism 'moving the holding portion with respect to the light emitting portion and the sensor in a predetermined moving direction along the main surface of the substrate; the light emitting portion a light source that emits light having three complex wavelength bands, and an optical system that changes eight to the moving direction on the same day T of the light from the light source along the main surface Vertical line light, and the guide 312XP / invention manual (supplement) / 95 · _ 5 丨〇 J J J J J 45 1276775 The above main surface; the above sensor is a line sensor, which is the same as the movement of the above holding portion ^ Repeatingly taking the intensity distribution of the light of the specific wavelength band reflected by the linear light on the irradiation region of the substrate. 5. The film thickness unevenness inspection device according to the first aspect of the patent application, Further, a polarizer is disposed in the optical path from the light emitting portion to the sensor, and selectively transmits S-polarized light in the light reflected by the film. The film thickness unevenness inspection device of the fifth aspect, wherein the polarizer is disposed between the substrate and the sensor. 7. The film thickness unevenness inspection device of claim 6 is ,ί A condensing lens is disposed from the substrate to the above-mentioned ==, and the specific wavelength band a' is disposed between the condensing lens and the sensor toward the sensor. The film thickness unevenness inspection device of item 5, wherein the device is placed between the light emitting portion and the substrate. • The film thickness of the month is limited to 8 items. The film thickness unevenness inspection device, Bean, Liu:! a film thickness unevenness inspection device having a condensing lens disposed in the optical path from the substrate to the optical path and facing the above-mentioned specific wavelength band toward the above-mentioned sensor, wherein: a moving mechanism that moves the holding portion with respect to the light emitting portion at 312 ΧΡ / invention specification (supplement) / 95-_51 〇 7391 ^ 1276775 and the above-mentioned sensor, along the main surface of the substrate; The light emitting portion includes a light source, and an optical system that guides the light from the light source along the main surface to be linearly aligned with the moving direction. The main surface sensor is a line sensor which, in synchronization with the movement of the holding portion, repeatedly obtains an intensity distribution of light of the specific wavelength band reflected by the linear light on the irradiation region of the substrate. The film thickness unevenness inspection device according to the first aspect of the invention, further comprising: a filter disposed in the optical path from the light emitting portion to the sensor, and allowing the above Light transmission of a specific wavelength band; and a filter tilt mechanism that changes the inclination of the optical filter to the optical path. 12. The film thickness unevenness inspection device according to the scope of claim U, i The tilting mechanism 'rotates the filter centering on the axis parallel to the linear light.丨3. The film thickness unevenness inspection device of claim 1, wherein the film on the substrate is formed on the main surface by a coating liquid. An inspection device for inspecting the 312XP/invention specification (supplement)/95-06/95107391^1276775 film thickness unevenness formed on the substrate, which has a holding portion for holding the substrate; The emitting portion has a main surface formed by the light transmissive film of the substrate of ?1? or more and 40?. The following incident angle emits light; and the sensor receives light of a specific wavelength band reflected on the main surface of the substrate to obtain an intensity distribution of light from the specific wavelength band of the main surface. The film thickness unevenness inspection device of claim 14, further comprising: a wavelength band switching means for switching the specific wavelength band between mutually different complex wavelength bands; the light emitting portion Light having light of the plurality of wavelength bands is emitted; the wavelength band switching means has: a plurality of filters selectively allowing light φ transmission of the plurality of wavelength bands, and a filter switching mechanism, Among the plurality of filters, one of the filters disposed in the optical path from the light emitting portion to the sensor is replaced with another chopper. _16. The film thickness unevenness inspection device of claim 15, wherein ', further comprising: 〃 1st filter tilting mechanism' is among the plurality of filters, the first filter The inclination of the optical path formed by the device; MMP/Invention Manual (Supplement 48!276775, the second filter tilting mechanism, wherein the first filter is changed among the plurality of filters) The inclination of the second filter to the optical path; and the 'moving mechanism' for holding the holding portion with respect to the light emitting portion and the sensor in a predetermined moving direction along the main surface of the substrate Moving; the above-mentioned light emitting portion is provided with a light source that emits light of three light having the plurality of wavelength bands; and a light system that converts light from the light source along the main surface to be perpendicular to the moving direction The linear light is guided to the sensor as a line sensor', and the movement of the holding portion is repeated, and the light of the specific wavelength band reflected by the linear light on the irradiation region of the substrate is repeatedly taken. The intensity distribution.膜. The film thickness unevenness inspection device of claim 15 is further provided with: a body changing said plurality of filters for the upper filter tilting mechanism for describing the inclination of the optical path; In the predetermined moving direction along the main surface of the substrate, the upper nuclear holding portion is provided with respect to the light emitting portion and the sensor, and the light emitting portion is provided with a light source. , which emits light of light having the above-mentioned plurality of wavelength bands, 3 Guang/Fa Ming Ming (Supplement) / 95·〇6/95ι〇 739ι 1276775, an optical system, which causes light from the above-mentioned light source to follow the above Simultaneously, the main surface is converted into linear light perpendicular to the moving direction, and guided to the main surface; the sensor J is a line sensor, which is synchronized with the movement of the holding portion to repeatedly obtain the line The light beam is irradiated onto the intensity distribution of the light of the specific wavelength band reflected on the irradiation region of the substrate. 18. The film thickness unevenness inspection device of claim 14 is further provided with a polarizer 'which is disposed at the same time from the above-mentioned light exiting portion to the above-mentioned sensing optical path command' S-polarized light in the light reflected by the above film. 19. The film thickness unevenness inspection device according to claim 18, wherein the polarizer is disposed between the substrate and the sensor. 20· As claimed in the patent application, the ninth < 朕厗 朕厗 朕厗 检查 检查 , 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备 具备The light is concentrated; the door is disposed toward the upper return sensor to dispose the specific wavelength band = offset between the concentrating lens and the sensor. 21 · In the scope of claim VIII, the <membrane defect inspection device, wherein the polarizer is disposed in the light, such as the patent application, the second film exit unevenness inspection device, 312 ΧΡ / invention Manual (supplement) / 95-〇6/95〗 0739〗 1276775 is further advanced to the above specific wavelength band! A condensing lens ‘arranged from the substrate to the sensation U is forwarded ’ while concentrating light toward the sensor. 23. The film thickness unevenness inspection device of claim 14, further comprising a moving mechanism provided on the main surface of the substrate In the moving direction, the holding portion moves with respect to the light emitting portion and the sensor; the light emitting portion includes: a light source; and an optical system that causes light from the light source to follow the main surface At the same time, it is converted into linear light perpendicular to the moving direction, the main surface; the sensor is a line sensing H' which is synchronized with the movement of the holding portion, and the linear light is repeatedly applied to the above The intensity distribution of light in the specific wavelength band reflected on the illuminated area of the substrate. 24. In the film thickness unevenness inspection device of claim 23, i, 〃 further includes: a filter element disposed in the optical path from the light emitting portion to the sensor and allowing The light transmission of the specific wavelength band; and a filter tilting mechanism that changes the inclination of the optical filter to the optical path. 312XP / invention manual (supplement) / 95-06 / ^ 07 ^ 51 1276775 in 25. The film thickness unevenness inspection device of claim 24, which = filter, optical device tilt mechanism, to face and the above axis Centering on, the above filter is rotated. The film thickness unevenness inspection device according to the fourth aspect of the patent application is the same as the above film on the substrate. The method for inspecting the coating liquid on the curved coating is a method for inspecting the thickness of the film, and the film thickness of the poet film is not uniform, and the sheet is made of a) a light emitting step for the base surface. 50. The light is emitted by an incident angle of 5 〇 or more and 65 or less formed by the transparent film of the earth plate; the W intensity is divided into steps, which are received on the smooth surface of the specific wavelength band after the reflection of the substrate The intensity distribution of light from the above-mentioned characteristic wavelength ▼ of the above-mentioned main surface; and the c) wavelength band changing step, which is a description of the steps a) and b) above.心 疋 疋 疋 而 而 反 · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 膜 膜 膜 膜The polarization crying selectively allows the f〆 bias after the reflection of the above-mentioned film "Selection 11 29 · Please refer to the patent range of the first factory polarization, transmission. Medium, negative film thickness unevenness inspection method, its 312XP / invention manual (Supplement) /95·〇6/951〇739ι 52 1276775 Further, there is further provided a step of changing the inclination, which is disposed in the light from the light emitting portion via the substrate to the sensor in the step a) In the process, subselectively allowing light transmission of the specific wavelength band to change the inclination of the optical filter to the optical path; in the step a), moving from the direction along the main surface; The light emitting portion that is privately moved by the I substrate emits a predetermined linear light along the main surface along the main surface and perpendicular to the moving direction; In the step b), the sensor that moves with respect to the substrate receives the light of the upper-precision wavelength band reflected on the film together with the light emitting portion, and is repeatedly obtained from the main surface. The intensity distribution of the light from the linear illumination area extending in the direction of the shout. • 30'-film thickness unevenness inspection method for inspecting the film thickness unevenness of the film formed on the substrate, which is provided with: a) a light exiting step "which is formed by the light-transmitting film of the above substrate The main surface is emitted by light at an incident angle of 10 or more and 40; and b) an intensity distribution obtaining step of receiving light of a specific wavelength band reflected on the main surface of the substrate to obtain the light from the main The intensity distribution of the light in the specific wavelength band of the surface. 31. The film thickness unevenness inspection method according to claim 30, wherein the specific wavelength band light in the step b) is attached to the main surface Where the polarizer is transmitted before or after the reflection is generated, the polarizer selectively allows transmission of 8-polarized light in the reflected light reflected by the film. 312XP/Invention Manual (Supplement)/95-06/95107391 53 1276775 32. The method for inspecting the film thickness unevenness according to the scope of claim 30, wherein the step of changing the inclination is further preceded by the step of: 'pairing the light from the light exiting portion and selectively holding the soil (4) First make each (four) optical device Said optical path: the transmission filter dumping 'in the above step a), from the outer Qiao Yau / square moves opposite the direction of the main surface The light emitting portion that moves on the substrate emits linear light that extends along the main surface 'in a predetermined direction perpendicular to the moving direction toward the film; and in the step b), the light emitting portion Together, the sensor that moves relative to the substrate receives the light of the specific wavelength band reflected by the film, and repeatedly receives the light from the linear irradiation region extending in the predetermined direction on the main surface. Intensity distribution. 312XP/Invention Manual (supplement)/95-06/95107391 54