l3l〇4ii 九、發明說明： 【發明所屬之技術領域】 本發明為提供一種製造二極體金屬層之方法，尤指一種 ，用不含氰化物之無電解電狀置換或财、金驗式製程， 藉由置換或還原反應錢特定金屬沉積於二極體晶圓或晶片 之金屬底材上，以產生一均勻且厚度足夠之金屬層者。 【先前技術】 鲁 按’隨著全球性能源危機意識高涨，尋求高效率之能源 以取代傳’明’已成為—項重要之課題。半導體由於可以 把此里在光與電兩種形式間轉換，故衍生出許多實際應用， 如.發光二極體（LED)係;I於-種固態發光ϋ件，可將 電力直接轉換成光’發光二極體具有省電、耐震、壽命長及 不易發熱等多項優點，近年來，已發展出超高亮度之發光二 極體，與不同波長的發光二極體，如：白光/藍光之發光二 極體，以取代目前所使用之白熱燈泡、函素燈泡。 • 〃目河超高亮度白光/藍光之發光二極體的品質，取決於 虱化鎵蟲晶（GaN)的材料品質，而氮化鎵屋晶品質則與 使用的藍寳石基板表面加工品質息息相關，藍寶石（單晶三 氧化二IS)由於晶體結構與氮化縣晶近似，同時符合氮化 - 鎵Μ之蟲晶製程中耐高溫之要求，使得藍寶石晶圓成為製 ' 作白光/藍光之發光二極體的關鍵材料。 - 此外’為了增加電流的擴散，係在Ρ型料體層（如： 發光-極體（L E D ))上驗或麟數層薄金屬結構，如： 利用鎳/金（N i u )絲〆金（c。u )等雙層 5 進：熱處理的方式’使得薄金屬結構 处…轉，箱達縣穿透的效果。 淮，舸述在發光二極體（L E D) =形叙金顧，卻具有如下之魅·· _讀或機鍍方 -雜、製 、利用蒸贱濺财法师得之金屬層，其 造時程長、無法降低生產成本。 2、二於蒸奴;聽方法·得之金屬層， ::故無法節省金屬之耗用量、耗電量及操作 4 舰爾增|，其設備 無法大幅郎省設備投資與生產成本。 嫩她㈣軸的 =力且其產品品質之可靠度纽有效地提高。 的市人在感覺到此一美中不足之處及在瞬息萬變 顯得“的3不！f地發明出獨特且具創新效果之產品，即 而不被淘爭嶋市場上脫賴而出 【發明内容】 全屬ί鑑^収仙，射㈣用純«鍍綠而形成之 金^旦由=為整面金屬沉積，故無法節省金屬之耗用量 附著^各二Ϊ生it'且無法有效提高打線或録接的 ί二’=::;Γ究與實驗，終於開發設計出本 相由本發明之切，對社會大眾有所幫助。 1310411 、本發明之主要目的，在於提供—種製造二極體金屬層之 方法，其可產生均雜極高之金屬層、操作簡單、可於二極 體晶圓或晶>1之正反兩面同時沉積金屬層、縮短製造時j 可大幅降低生產成本。 ’王’ 、本發明之次要目的，在於提供—種製造二極體金屬層之 方法’其可制或置換反應以轉性沉積欲沉積之金 層於金屬底· _其上’以取代傳統使用蒸鍍錢鍛為敕 面金屬沉積，大幅節省金屬之耗用量，並節省 ς 操作與生產成本。 电置昤低 本^之另—目的’在於提供—種製造二極體金屬層之 方法稍支出雜傳統使用魏或麟為低，可大 省設備投資，降低生產成本。 田ρ 本，月之又目的，在於提供一種製造二極體金屬層之 生得之金屬層之表面較傳統使用驗或義所產 之表面粗‘，可有效提高打線或銲接 品質之可靠度，使得產品之市場競爭力更為顯著。 方去本目的，在於提供—種製造二極體金屬層之 职；^ 麟可作為電傳導、打線、辞接、導電 升產品品質與可靠度 途，亦可增強散熱效果，以提 為^成前叙目的，本㈣之技術手段，係 1 匕解魏之置換或還原金-式製程，先於-欲形 ==晶圓或晶片區域，形成-可作為無電解電 鑛置換或還原金屬溼式製程之金屬、金屬氧化物或合金底材 1310411 ，硐藉由置換或還原反應而使一特定金屬沉積於金屬底材上 ^以產生所需厚度之金屬層，其巾尚可於二極體晶圓或晶 片區域上製作一阻隔層，並對阻隔層進行圖案化，以形成複 數個顯露出金屬底材之開口，及對該二極體晶圓或晶片區域 上，進行無電解電鍍之置換或還原金屬溼式製程，以在自該 開口顯露出之金屬底材上沉積形成金屬層，且係可於金屬層 上進行打線接合。 s 【實施方式】 本發明係-種「製造二極體金屬層之方法」，請參閱第一 圖所不，尤指利用不含氰化物之無電解電鍍之置換或還原金 屬座式4方法係先於—欲形成金屬層之二極體晶圓或 晶片區域，形成一可作為無電解電鍍置換或還原金屬溼式製 知之金屬、金屬氧化物或合金底材，崎由置換或還原反應 而使-特定金屬沉積於金屬底材上，岐與金顧材相同或 相異材質之金屬沉積於金屬底材上，藉以產生所需厚度之金 屬層，藉以產生所需厚度之金屬層。 除此之外’在本發明之方法中，尚可於該二極體晶圓或 晶片/域上製作一阻隔層’並對該阻隔層進行圖案化，以形 成複數個麟出底材之開σ，及職二鐘晶_晶片區域 上’以利用綠、濺鍍、麵或者無電解電叙方式產生所 需之金屬傭，·或在_層_化之開σ顯糾之金屬底材 上’進行無電解電鑛之置換或還原金W製程，以沉積形 成ί金屬層，而使與底材相同材質之金屬沉積於金屬底材上 ’猎以產生所需厚度之金屬層，且可於該觸層上進行打線 1310411 接合。 在本發明中’該金屬層 、鎳、鋅、鉻或η銀、銅、銘、把 ，於-奸日^ 仏金屬、1 族金屬等金屬；又 夕Γγϊ或晶片區域上製作之阻隔層，可於金屬底材 之產生前$作、產生㈣作< 了於金屬底材 底後均製作之，·至於該金屬 穿之方U /㈣係可姻級、贿、贿或者無電解電 在該金屬底材之材f選擇上，通常為金， “二、錄、鋅、鉻或1 1 1厶族金屬、1 族金屬、VA族金料金屬，或者上述金顧類一種以 上所形成之雙層金屬或合金底材。 、藉此，该金屬層之材質為金時，該無電解電鍍之置換 或還原金屬L輯使用之反應_，係可添加有亞硫酸 金鹽、硫代硫酸金鹽、三氯化金等金屬翻或其錯化合物。 又^ 5亥金屬底材之材質為銅或含銅8〇%以上之銅合 金時，係使用無電解鍍金之溼式製程，以置換反應，將金反 應至该金屬底材之表面；且當該金屬底材之材質為銅或含銅 8 0%以上之銅合金時，係使用無電解鍍金之溼式製程，以 置換反應，將銀反應至該金屬底材之表面。 又’當該金屬底材之材質為鎳或含銅/鎳複合金屬層， 係使用無電解鍍金之溼式製程，以置換反應，將金反應至該 金屬底材之表面。 又’當該金屬底材之材質為把或鉑時，係使用無電解錢 金之歷式製程，以還原反應，將金反應至該金屬底材之表面 1310411 一又，當該金屬底材之材質為金時，係使用無電解鑛金之 逢式製程，以反應，將金反應至該金取材之表面。 :上所述，仙可以理解到，本發明係具有下 貫用價值： 2 1、藉由本發明之方法，射產生均勻性極高之金屬層，且 可^一極體晶圓或晶片之正反兩面同時沉積金屬層，不 僅操作簡單，縮短製造時程，且可大幅降低生產成本。 、藉由本發狀方法’係可制_或置換反應以選擇性 沉積欲沉積之金麟於麵储朋或其上，以取代傳 統，用驗或雜為整面金屬沉積，大幅節省金屬之耗 用量，並節省耗電量、降低操作與生產成本。 3由本發日狀方法，設備支㈣較觀制蒸鑛或減錢 j低’故可大幅節省設備投f，降低生產成本。 4、 =由本發明之方法，其所製得之金屬層之表面較傳統使 “鑛或着所產生之表面粗糙，故可有效提高打線或 的附著力’提升產品品質之可靠度’使得產品之市 兄爭力更為顯著。 5、 藉由本伽之方法，其所製得之金勒可作為電傳導、 打線、銲接、導電膠傳導、凸塊、覆晶封裝等用途，亦 可增強散熱效果，以提升產品之品#與可靠度。 ^歸納以上所述，本發明之方法確實為一呈右τn 實用價值，並可有效提升整體之轉效益。’、’夕u 之括2所述’縣本發明最狀—具體實_，惟本發明 、徵並不紐於此’凡任何熟悉該項技藝者在本發明 10 1310411 領域内，可輕易思及之變化或修飾，應均被涵蓋在以下本案 之申請專利範圍内。L3l〇4ii IX. Description of the invention: [Technical field of the invention] The present invention provides a method for manufacturing a metal layer of a diode, in particular, an electroless electroless replacement or a financial or gold test without cyanide. The process involves depositing a specific metal on a metal substrate of a diode wafer or wafer by displacement or reduction to produce a uniform and sufficiently thick metal layer. [Prior Art] Lu Press' With the rising awareness of the global energy crisis, it has become an important issue to seek high-efficiency energy to replace the “Ming Ming”. Because semiconductors can convert between light and electricity, many practical applications have been derived, such as light-emitting diodes (LEDs); I, in solid-state light-emitting devices, can directly convert electricity into light. 'Light-emitting diodes have many advantages such as power saving, shock resistance, long life and low heat generation. In recent years, ultra-high brightness LEDs have been developed, and LEDs of different wavelengths, such as white/blue light. Light-emitting diodes to replace the white heat bulbs and light bulbs currently used. • The quality of the high-brightness white/blue light-emitting diode of the eye-catching river depends on the material quality of the gallium arsenide crystallite (GaN), and the quality of the gallium nitride roof is closely related to the surface quality of the sapphire substrate used. The sapphire (single crystal trioxide II) is similar to the nitriding crystal in the crystal structure, and meets the requirements of high temperature resistance in the process of nitriding-gallium-tellurium, making the sapphire wafer a white light/blue light. The key material of the diode. - In addition, in order to increase the diffusion of current, it is applied to a layer of a 料-type material (such as a luminescent body (LED)) or a thin metal structure of a few layers, such as: using nickel/gold (N iu ) silk gilt ( c. u) and other double-layer 5 in: heat treatment in a way that makes the thin metal structure ... turn, the effect of the boxing county penetration. Huai, described in the light-emitting diode (LED) = the shape of the Jin Gu, but has the following charm · _ read or machine plating square - miscellaneous, system, using the metal layer of the steamed smashing mage, its time Cheng Chang can't reduce production costs. 2, the second in the steaming slave; listening to the method · the metal layer, :: can not save the metal consumption, power consumption and operation 4 ship Erzeng |, its equipment can not significantly increase equipment investment and production costs. The strength of her (four) axis and the reliability of its product quality are effectively improved. The city people feel this deficiencies and in the fast-changing "3 no! f invented a unique and innovative product, that is, not to be riddled by the market, the invention] It belongs to ί鉴^收仙,射(四)With pure «plated green, the gold is formed by the whole metal deposition, so it is impossible to save the metal consumption and attach it to each other and it can not effectively improve the wire or The recording of the ί二'=::; research and experiment, finally developed and designed this aspect of the invention to help the public. 1310411, the main purpose of the present invention is to provide a kind of manufacturing diode metal The layer method can produce a metal layer with extremely high impurity, simple operation, and can simultaneously deposit a metal layer on both sides of the diode wafer or the crystal>1, and shorten the manufacturing time, which can greatly reduce the production cost. Wang', the secondary purpose of the present invention is to provide a method for fabricating a metal layer of a diode, which can be formed or replaced to transfer the gold layer to be deposited on the metal substrate to replace the conventional use. Evaporation of money for forging metal deposition, large section The consumption of metal is saved, and the operation and production cost are saved. The other is to provide a method for manufacturing a diode metal layer. The traditional use of Wei or Lin is low. Investing in equipment in the province, reducing production costs. Tian ρ, the purpose of the month is to provide a surface of the metal layer produced by the manufacture of the diode metal layer is thicker than the surface of the traditional use or test, can effectively improve The reliability of the wire or welding quality makes the market competitiveness of the product more remarkable. The purpose of this is to provide the role of manufacturing a diode metal layer; ^ Lin can be used as electric conduction, wire bonding, reciprocating, conductive rise Product quality and reliability, can also enhance the heat dissipation effect, to promote the pre-speech purpose, the technical means of this (four), 1 to solve the Wei's replacement or reduction gold-type process, prior to - shape == crystal a circle or wafer region, formed as a metal, metal oxide or alloy substrate 1310411 for electroless ore replacement or reduction metal wet process, by depositing a specific metal on the metal substrate by displacement or reduction reaction The metal layer is formed to produce a desired thickness of the metal layer, and the mask can be formed on the diode wafer or wafer area to form a barrier layer, and the barrier layer is patterned to form a plurality of openings exposing the metal substrate. And performing a non-electrolytic replacement or reduction metal wet process on the diode wafer or wafer region to deposit a metal layer on the metal substrate exposed from the opening, and the metal layer is The present invention is a "method for manufacturing a diode metal layer", please refer to the first figure, especially the replacement or reduction metal using electroless plating without cyanide. The method of the seat 4 is preceded by a diode or wafer region where a metal layer is to be formed, and a metal, metal oxide or alloy substrate which can be used as an electroless plating replacement or reduction metal wet method is formed. Or a reduction reaction to deposit a specific metal on the metal substrate, and a metal of the same or different material as the gold material is deposited on the metal substrate to thereby produce a metal layer of a desired thickness, thereby producing a desired thickness. The metal layers. In addition, in the method of the present invention, a barrier layer can be formed on the diode wafer or wafer/domain and the barrier layer is patterned to form a plurality of substrates. σ, the second working crystal of the _ _ wafer area on the use of green, sputtering, surface or electroless metal to produce the required metal maid, or on the _ layer _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 'Performing an electroless ore replacement or reduction gold W process to deposit a metal layer, and depositing a metal of the same material as the substrate onto the metal substrate to hunt to produce a metal layer of the desired thickness, and Bonding is performed on the contact layer 1310411. In the present invention, the metal layer, nickel, zinc, chromium or η silver, copper, 铭, 把, - 奸 ^ 仏 metal, a group of metals and the like; the Γ Γ Γ or the barrier layer formed on the wafer area, It can be made before the production of the metal substrate, and (4) is made after the bottom of the metal substrate. As for the metal U/(4), it can be married, bribed, bribed or electroless. The metal substrate material f is selected, usually gold, "two, recorded, zinc, chromium or 11 1 lanthanum metal, 1 group metal, VA group metal metal, or more than one of the above-mentioned gold a double-layer metal or alloy substrate. Thereby, when the material of the metal layer is gold, the reaction of the electroless plating replacement or the reduction metal L is used, and the gold salt of sulfite or the gold thiosulfate may be added. Metal such as salt or gold trichloride or its wrong compound. When the material of the metal substrate is copper or a copper alloy containing more than 8% copper, the electroless gold plating process is used to replace the reaction. Reacting gold to the surface of the metal substrate; and when the metal substrate is made of copper or copper 80% In the above copper alloy, a wet process of electroless gold plating is used to replace the reaction, and silver is reacted to the surface of the metal substrate. Further, when the metal substrate is made of nickel or a copper/nickel composite metal layer Using a non-electrolytic gold-plated wet process to displace the reaction and react gold to the surface of the metal substrate. In addition, when the material of the metal substrate is platinum or platinum, the use of electroless gold is used. The process, in the reduction reaction, reacts the gold to the surface of the metal substrate 1310411. When the material of the metal substrate is gold, the electroless gold is used in the process of reacting, and the gold is reacted to the reaction. The surface of the gold material: As described above, it can be understood that the present invention has a lower value: 2 1. By the method of the present invention, a metal layer having a very high uniformity is produced by injection, and a crystal body can be formed. The metal layer is deposited on both the front and back sides of the circle or the wafer, which not only is easy to operate, shortens the manufacturing time, and can greatly reduce the production cost. The present invention can selectively deposit the gold to be deposited by the method of the present invention. Lin Yufu In addition, instead of the traditional, the use of inspection or miscellaneous metal deposition, greatly save the consumption of metal, and save power consumption, reduce operating and production costs. 3 by the Japanese method, equipment support (four) more Steaming or reducing money is low, so it can save a lot of equipment and reduce production costs. 4. By the method of the present invention, the surface of the metal layer produced by the invention is rougher than the surface produced by the mine or the metal. Therefore, it can effectively improve the adhesion of the wire or the 'reliability of improving the quality of the product', making the product of the product more competitive. 5. With the method of Benga, the Jinle can be used for electric conduction, wire bonding, welding, conductive adhesive conduction, bump, flip chip packaging, etc., and can also enhance the heat dissipation effect to enhance the product# Reliability. ^In summary, the method of the present invention is indeed a practical value of right τn, and can effectively improve the overall benefit. ', ' 夕 u 2 2 'the county's most invented - specific real _, but the invention, the levy is not here" Anyone familiar with the art in the field of the invention 10 1310411, can easily think Any changes or modifications shall be covered in the scope of the patent application in this case below.
11 1310411 【圖式簡單說明】 第一圖係為本發明之方法方塊示意圖。 【主要元件符號說明】 無11 1310411 [Simple description of the drawings] The first figure is a block diagram of the method of the present invention. [Main component symbol description] None
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