TWI305875B - Run-to-run control method and system for semiconductor manufacturing - Google Patents

Description

, 1305875 衾 March 8th repair (3⁄4 positive replacement page [Technical Field of the Invention] The present invention relates to a semiconductor manufacturing method, and more particularly to a semiconductor manufacturing batch control method and system. Etching is a technique that removes materials using chemical reactions or physical impacts. Silver engraving techniques can be divided into two categories: Wet Etching and Dry Etching. In the etching, a chemical solution is used, and a chemical reaction is used to achieve the purpose of etching, and the dry button is usually a plasma etching. The dry money is divided into three categories: "material rational etching" (including "splashing" Sputter Etching and I〇n Beam

Etching)"), "Chemical etching: plasma etching" and "physical and chemical compounding (ie reactive ion etching (referred to as e)". Reactive ion side (RIE) is The most various reactions are widely used in (4) methods, which combine physical ion bombardment with the side of chemical reactions. This method has the dual advantages of 弁 isotropic and high surname selection, and the lateral inspection of the main county scale reaction is achieved. Turned to Gao Congbi. Adding ion bombardment to the second: - will be destroyed by the side material table _ atomic bond to accelerate the reaction rate. Second, will be redeposited on the surface of the product or polymer ((10) Qing (five) knocked out, the surface of the punching money can be contacted with the side gas. The non-isotropic side is achieved by the deposition of the product "composite, the pattern of the younger side, the silk_sediment can be the side of the ion." Conducted, and in the age of _, the county was left by Xuan County secrets, ^ Na Nen minus __, leg _ editing, butterfly application dry silk engraving mainly pay attention to _ rate, uniformity, selection ratio

Client's Docket No. : PT.AP-527 TT'sDocketNo : 〇532-A4〇585-TW/Finall /Alex Chen/3/7/2006 Indicators ‘Difficult uniformity means crystal _ her face ——

Client's Docket No_ ·· ΡΤ.ΑΡ-527 Ι*/1, especially when the crystal garden 3. ..1305875, - until the 12's larger area, the uniformity control choice is faster than the w_ The ratio of the bottom side velocity is important. Usually with gas type and ratio, plasma or partial power, even reaction temperature selection is better than side profile - generally closer to ninety degrees, except for a few special cases, such as (c〇mactwindowandviah〇le), in order to The subsequent gold A or "step 〇〇ν6^^ can be performed from the gas type, ratio, and power. "Control paste wheel ^ = (4) Office side, money ^: Firstly perform the development process to transfer the designed circuit to the wafer by the reticle (four) after the wafer is formed, and perform the post-development inspection (German Devel〇pment = development process _ Money occurs. If _, 箸 箸 反应 反应 箸 = ============================================================= The side technology of the good and bad mosquito circuit _ key size (CritieaiDimensiQn, 3), 'Tian and after the completion of the side will be executed after the silver engraving (she rEtchInspecti〇n, Qing to judge whether the money in the H right. However, in the process of performing development and butterfly processing on the wafer, the development process may be mutated due to any error of the software and hardware, so that the result of the surname is entered into the inspection machine of the (4) miscellaneous inspection (AEI). Even if you listen to the post-view (touch any variation, it may be due to the reaction of the Newcasting machine itself or the side machine to the (Chambei·) ID for a certain breeder's different calving energy and qualityϋ The results of the inspection of the 彡 钱 钱 ▲ 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆The present invention proposes an improved batch control method for semiconductor manufacturing, which compensates for variations in the wafer manufacturing process, thereby improving wafer quality and productivity. [Summary of the Invention] invention Example discloses a method of manufacturing a semiconductor batch controlling party

Client's Docket No. : PT.AP-527 TT'sDocketNo : 〇532-A40585-TW / Finall / Alex Chen/ 3/7/2006 , , 1305875 3. oa method and complex hiding parameter meter gamma ^ D. The process parameters such as the root___size value include at least - the display of the wafer; and the process of controlling the parameters of the wafer batch, wherein the inch, the weight coefficient, the display key = the key size The key ruler obtained after a silver engraving is based on - experimental 峨 __ = =, the target value of the enemy phase, the work, persuading the m2 amount to execute - the process and the shouting » » » compensation operation: the first _ _ - the second coffee process control The basis of the parameter / 31 as a calculation corresponds to a second wafer batch of one inch, body = Μ: machine to obtain a first-wafer batch - the first - the key rule - the rest == two = the number of calculations obtained _ , batch * simultaneous execution - mutation complement: = ΓΓ batch execution of a process and a second key financial tree to calculate the basis of the first-wafer batch. The process parameters include at least the servant juice of a township, the Weiwei/key size, the value obtained after the engraving, the target value of the development dimension, the production value of the side inspection dimension, and the experiment. _________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________________ DETAILED DESCRIPTION OF THE INVENTION The present invention is described in various embodiments to illustrate the technical aspects of various embodiments of the present invention. Two of them

The various components of the planted county said that the use of joy, Lin with Benga. And the part of the actual figure I is repeated, and the surface is simply deleted, and the sound is fine (4). (4) The joint figure private invention is implemented _ exposed - kind of transfer M made the reading financial method and system.

Client's Docket No. : PT.AP-527 s Docket No - 0532-A40585-TW / Finail / Alex Chen / 3/7/2006 1305875 CADI) The housing shaft shows the different reaction chambers in a process machine according to the development Inspection results (AW (4) post-view (AEI) results, the horizontal dimension of the CD (CD) force critical dimension (CD), vertical axis indicates the side of the rear view (AEI) key size in thank you The peak of the age-competent A (Chamber-A) is out of the wafer. * The black dot indicates the inspection of the wafer produced by the reaction chamber B (Chamber-B) of the processing machine. It is set to 〇126(um), but because of the process control method, most of the wafers after the development of the wire can not reach the target size. Attachment 2 Value: Γ ff - different reaction chambers in the process machine after the completion side The resulting side deviation 〇 Yin, from the date of the date (Date) 'vertical axis indicates the button offset value (EtchBias). The standard deviation value is set to rhyme, but because of the poor process control method, after the wafer is secretly engraved The resulting deviation of the surname cannot be achieved or is very close to the deviation of the deviation. The structure of the reduction control Wei, 100, the next half of the example, the batch control of the manufacturing (four) system mainly includes - batch controller 1 2, ', 卩 according to the current process control parameters taken, using the present invention The mathematical formula calculates the optimal control parameters for performing process control, and performs variation compensation according to the obtained second-order number. In the implementation of the invention, the process control parameters include voltage, y, = flow rate, and the like. However, it is not intended to limit the invention, and any relevant parameters that can be taken during the execution of the process can be used for process control. When a batch of wafers is developed on a developing machine (not shown), the wafer is rejected. Transfer the fine job to the financial controller (9), the key size value is conveyed to the batch controller. The batch controller optimizes the process control parameters according to the critical size batch wafer, and then transfers the calculated parameter value. The engraving machine 120 is provided. The batch of wafers is then transferred to the paste machine to serve the batch of wafers, and the variation compensation is performed according to the optimized process control parameters. In addition, the private side machine is executed. Π0 will hold The process left foot axis fine control desired value following the transfer to the batch control

Client's Docket No. : PT.AP-527 TT's Docket No : 0532-A40585-TW / Final / Alex 〇h en/ 12/26/2005 .1305875 Controller 100' allows batch controller 100 to make more precise variations make up. When the wafer is engraved! 2〇 After the process, the wafer is transferred to the critical dimension (AEICD) obtained after the viewing side of the machine, and the key size value is transmitted to the batch control @ As the basis for performing variation compensation for the next batch of wafers. · The batch controller 100 obtains the critical dimension (AmcD) obtained after development, the key dimension obtained after the side (AEICD), and the number of control points required to perform the control, and according to the preset weight coefficient (5), development The target value of the key size (Shengyang Ta chat) target value of the key size of the disk side (AmCD Target) and the experimental design result (De_如•越秘) The slope of the 140 households (4), using the mathematics of the sun and the moon The calculation calculates the optimal process control parameters for the wafers of the current product batch to perform the control. DOE Result 140 refers to the relationship between the critical dimension (aeicd) obtained after development and the critical dimension (趟CD) obtained after the side relative to the process control parameters. Refer to Annex 3 'X-axis for process parameters, γ-axis for key dimensions (10) ribs obtained after development) and critical dimensions (AEICD) for post-etching, which are inversely proportional to each other and can be linearly Y=aX+b Represents, where 〇; represents the slope of the equation of the line. The optimized process control parameters can be expressed in one program, namely: • Parameter^ =f, FF\+f(FB\, where the process control parameter indicating the current product batch (t), / (book), indicates a former The feed function, /(/^), represents a feedback function. The feedforward function is expressed as: f{FF)t -^^-ADICD^, a where 'represents the target value of the development critical size' indicates the current number of wafer lots The critical dimension obtained after development, α represents the slope of the DOE equation. The feedback function is expressed as:

Client's Docket No· : PT.AP-527 TT^ Docket No : 0532-A40585-TW / Final / Alex Chen / 12/26/2005 9 ί3〇5875 Sangha = Table shouting a little bit of production, w means Wei Wei, the obstacle ^ table:: engraved, the target value of the size, Li U shows the target of the development of the key size:, the surface of the dry = -]) the key size of the side of the batch of wafers, the ship is all%) rate, The critical dimension obtained after developing a batch of wafers, α indicates that the oblique ar_ridge nucleus of the biliary equation does not indicate the touch control parameters of the first (Η) batch wafer. At present, ^^^(4) is her 彳4, and the formula is calculated by taking the miscellaneous formula. The money is again _ the current implementation ^ / delete. The flow of the axis_lion derivative. After obtaining the secret suture (10), the re-listing of the crystal _ number Wei line process, she misappropriated the lion, Mtw face different batch number = 'fine CD indicates the key size obtained after development, the size of the D D Process not obtained by batch number

As shown in Table 1, 'the current development machine has completed the development process for the six batches of crystal JU. The six batches of crystals have been completed on the side of the wire and the money is still six. The secret σ is obtained according to the known ADICE hybrid AHCD value. The first five batches of crystal 'batch controllers want to continue to calculate the sixth batch ((four) wafer process control parameters to the development system === Client's Docket No. : PT.AP-527 TT's Docket No : 0532-A40585-TW / Final / Alex Chen /12/26/2005 J305875 Bay False ° Refer to the process parameters of the fourth and fifth batches of wafers to calculate the process control of the sixth batch of wafers, which means that the number of batches of products calculated is 2 ( η=2) (not limited to this, it can be regarded as the actual shape of the test, and the process is controlled by the same method.) The preset silver key size target value is _ (Su CH132), the development key size The target u is 〇.126), the weight coefficient is 0·3 ((4)·3), and the slope of the equation of equation is __仏L as shown in Annex 3). The above parameters are substituted for the aforementioned feedforward function and the number, ie: number, ie: f(FF)6 /m6 0.132-0.134 '--=1, -0.002 0.3 x 0.134) 2 -0.002 + 19.8 + m ( 〇. 126-0·132)-((λ -x [(0.3 x (-2)+19.8)+(〇.3 x 0 +18.6)] 1 X (19.2 + 18.6) 2 -0.002 + 18.6 :18.9 ° As shown in the above calculation process, the sixth batch of optimized process control parameters can be made, namely: household £2 calendar 2 coffee ^_/(7^)6+/(qiu) 6=1 + 18.9 = 19.9 ^Reference Attachment* 'After the variation compensation, it can be seen from the figure that the second figure shows the schematic diagram of the semi-guided batch-type laying of the fine-grained case of the original day. The first-wafer batch is obtained by the -first-detection machine. One of the first critical dimensions (step si), the first key size value is transmitted to a batch controller (step S2), and the batch controller calculates the conversion-to-u batch-process according to the H-key size Control parameters (step S3) 'The above plurality of process parameters include the critical dimension obtained after development (AEICD), the key dimension obtained after the side (Shi (3)), the relevant control variable value required to perform the last name engraving process, and the weight coefficient (w) ),development The target value of the critical dimension (adicd target), the target value of the etch key dimension (AEICDTarge〇, and the slope (α) obtained from the DOE Result. A process is performed on the first wafer in batch according to the process control parameter. And simultaneously performing a variation compensation operation (step S4), and using a second check

Client's Docket No. : PT_AP-527 TT's Docket No : 0532-A40585-TW/Final/Alex Chen / 12/26/2005 11 1305875 The measuring machine obtains the first-wafer batch - the second ride size (key size transfer The batch controller is used as a basis for calculating the corresponding - the first parameter of the second system (step S6). The positive round is one of the process control of the present invention, and the related parameters of the process of the process are improved. And "acquisition of the parameters obtained to obtain the current t = the same wafer quality and capacity., and thus improve the wafer products.

= she (10) 峨 线 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The definition of full-time bribes shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram showing the structure of a batch control system for semiconductor manufacturing according to an example of the present invention. Fig. 2 is a block diagram showing the structure of a batch control system for semiconductor manufacturing of an example of the present invention. [Main component symbol description] 100~batch controller 110~ADI machine 120~name machine 130~ΑΕΙ machine 140~ experimental design result

Client’s Docket No. : ΡΤ.ΑΡ-527 TTssDocketNo : 0532-A40585-TW/Final/AlexChen/ 12/26/2005 12

Claims (1)

1305875 X. Applying for a patent 圚·· Manufacturing batch control method, including the following: Transfer the first 阙 key size value to a batch control cry. The first 阙 key size; The batch mmmm-With the m Wafer batch _ process control parameters; county preparation parameters sap different acquisition corresponding to the process control parameters for the first wafer batch compensation operation; Ding 釭 釭 81 81⁄2 implementation of a variation utilization - second detection machine to obtain the first - Wafer Batch - The second pass passes the second critical dimension to the basis of one of the process control parameters. The process parameters of the brother-sweet η batch 2', such as the application of the patent face, the tormentation, etc., include at least the material secret recipe, the key rule of the inch, the right, the _ after the _, the key The size of the target U-key size of the size and the slope obtained from an experimental design result. The _ value equals 3 steps, such as the conversion of 2 classes to the freshly produced batch butterfly method, wherein the dictator's t number also includes the relevant control parameters required to execute the process. 4. If the batch of the material produced by the paste is applied, the slope obtained by the experimental design is stabilized according to the straight line equation, wherein the straight line equation is not the size obtained after the development and the side is The relationship between the resulting critical dimensions and the = parameter. μ Table Twist & 5. A batch control system for semiconductor manufacturing, including: - batch controller 'its own - first - inspection machine acquisition - first - wafer batch - first critical size, according to the A critical dimension value and a plurality of process parameters are calculated to obtain a process control parameter corresponding to the first-turn circle batch, and a process is performed on the first wafer offset according to the process control parameter, and a variation compensation operation is simultaneously performed, and a The second inspection machine obtains the first-round batch of Client's Docket No_ : FLAP-527 TT s Docket No . 0532-A40585-TW / Final / Alex Chen /12/26/2005 13 1305875 The star of the star - the key size as Calculate the basis of the corresponding-second crystal si batch-process control parameters. 6. The batch control line for semiconductor manufacturing according to claim 5, wherein the process parameters include at least a critical dimension obtained after development, a critical dimension obtained after one side, a weighting factor, - the target value of the development critical dimension, the target value of the side critical dimension, and the slope obtained from an experimental design result. 7_ A batch control system for semiconductor manufacturing as described in claim 6, wherein the process parameters further include associated control parameters required to perform the process. • - &<>> The batch control system for semiconductor manufacturing according to claim 7, wherein the slope obtained from the design result is obtained according to a linear equation, wherein the linear equation is not developed. The ride size and the key rule obtained after the side are relative to the process control parameters. Client’s Docket No. : ΡΤ.ΑΡ-527 TT5s Docket No : 0532-A40585-TW/Final/Alex Chen / 12/26/2005