TWI303111B - Light emitting diode device and manufacturing method thereof - Google Patents

Description

1303111 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode element and a method of manufacturing the same, and more particularly to an earth-sparing oxide containing barium-activated earthworms A light-emitting diode element which is a living peroxyphosphate fluorescent material and a method for producing the same. [Prior Art] Since the light emitting diode (LED) has the advantages of small size, luminous efficiency, and long life, it is considered to be the best light source for the next generation of green festivals. In addition, the rapid development of liquid crystal display screens and the trend of full-color screens make the white light-emitting diodes not only be used for indicator lights and large display screens, but also into consumer electronics such as mobile phones and PDAs. The type of uranium light-emitting diode can be classified according to the semiconductor material used therein, for example, GaAs, GaAsl_xPx or GaP. In addition, if a nitrogen atom is doped in the GaAS1-xpx or GaP series semiconductor materials, light of different colors can be produced. In general, the light emitted by the light-emitting diode has a monochromatic wavelength characteristic, and the length of the wavelength is determined according to the energy change in the electron transfer process of the illuminable light, and the wavelength actually used currently includes infrared light, Red, green, yellow and blue. In human vision, 'the three colors of red, green, and blue are called "three primary colors" by the sensing of three different colors of red, green, and blue. Right, the red, green, and blue LEDs with different wavelengths will be adjacent to each other. White color and other intermediate colors will be known because of the light mixing. H:\HU\LGC\A34276\97639\97639.doc l3〇 3lli (neutral color) color light. U.S. Patent No. 5,995, issued to U.S. Patent No. 5,995, the disclosure of which is incorporated herein by reference. The white light generated by the above-mentioned light-emitting diodes mixed with different wavelengths is composed of different light-emitting diodes, and must be controlled by a suitable driving circuit, which is complicated in system design. In addition, U.S. Patent No. 6,614,179 discloses the generation of blue light by a light-emitting diode which emits a phosphor (ph〇sph〇r) to produce yellow light, which is mixed by two complementary color (complementary c〇1〇r) sources. Thereafter, white light is formed, wherein the blue light wavelength is 420 nm to 490 nm, and the yellow scale light is composed of {[(Y, Gd)Sm](AlGa)0:Ce}. However, the white light produced by this method has a poor performance on the true color of the object, that is, the color temperature (c〇1〇r temperature) is high, resulting in color rendering (c〇1〇r coffee is as good as (4). In addition, the Japanese Sumitomo Electric In the developed zigje white light emitting diode element, two complementary color rays are still used to generate white light. The light emitting diode element is grown on the zinc selenide substrate to form an epitaxial layer, which is mainly The light-emitting structure is composed of n-VI materials on the periodic table, for example, a quantum well of cadmium/selenium (ZnCdSe/ZnSe), which is filled with a forward current. The blue light is emitted, and the complementary color light is generated by using a doped chemical zinc substrate as a fluorescent material. It is disclosed in U.S. Patent No. 6,337,536 that the dopant can be woven (^, chlorine (C1), desert (Br), Ming (A1), gallium (Ga), and indium (in), etc. Using the self-activated (SA) luminescence mechanism, the substrate is illuminated at H:\HU\LGC\A34276\97639\97639 .doc 1303111 A short spectrum of light with a center wavelength between 5^〇nm and 65〇nm Rongguang. When the wafer is applied with current, the quantum well layer can emit blue light, and some of the blue light will be red-yellow after being absorbed by the doped selenium substrate. After the two kinds of light are mixed, the wafer itself will be rendered. White light body. This method also uses two colors to complement the white color, which is suitable for white light with lower color temperature. Compared with US Patent Nos. 6,614,179 and 6'337,536, the former lacks red light. The light of the regional wavelength, while the latter φ is the light lacking the wavelength of the green light region, so it is not easy to be promoted in color rendering. Therefore, in order to develop a high color rendering white light, it is necessary to control or adjust the light source to emit light. The ratio of the light of each color is similar to the composition ratio of natural light, so the color of the object presented is more realistic. In the development of fluorescent materials, the current method is yttrium aluminum garnet crystal (chemical formula: X^ The composition of AsBOOu) is the focus of research and development, such as y3 (ai3ai2) 〇 12, (Y3_xCex) Al5 〇 i2, (7) 〇 5) Ai 2, _ and (YHhCeo.wGdaXAh-bGaOOi2, etc. in the YAG phosphor structure borrow A white color light-emitting diode having a higher color rendering property is produced by mixing two or more kinds of phosphors. In addition, glory bodies having different average particle sizes (d5〇) also cause different wavelengths of light emission and intensity of light emission. In addition to the living yttrium aluminum garnet crystal, there is also a fluorescent material disclosed in PCT International Patent Application No. WO 02/054502 by the company Tddonic Optoelectronics GMBH, Germany, which has the chemical formula as follows: (2-xy)Sr0 x( Ba,Ca)0 (1_a_b_c part i〇2 ap2〇5 bA ton cB2〇3 dGe〇2:yEu~ The color temperature can be adjusted by changing the composition of the light-emitting material, or the red fluorescent material Y (v, P can be added) ,Si)〇4$u, etc. to adjust the color H:\HU\LGC\A34276\97639\97639.doc 1303111 degrees coordinates. As mentioned above, there is a need in the market for a light-emitting element that is similar in composition to natural light, which has better luminous efficiency and brightness. SUMMARY OF THE INVENTION An object of the present invention is to provide a light-emitting diode element and a method of fabricating the same that utilizes a semiconductor fluorescent material to absorb light generated by a light-emitting diode wafer, and emits a wavelength different from that of the light-emitting diode wafer. The fluorescent light of the illuminating line finally mixes the light and the fluorescent light emitted by the illuminating diode chip to form a multi-wavelength illuminating diode element. Another object of the present invention is to produce a white light intermediate light source such as pink or purpnsh pg by changing the composition ratio of the semiconductor phosphor material. In order to achieve the above object, the present invention discloses a light-emitting diode element and a method of fabricating the same. The light-emitting diode element comprises a light-emitting diode chip capable of generating an initial color light and a fluorescent material. The fluorescent material is composed of at least one compound selected from the group consisting of an alkaline earth oxide, a living bismuth citrate, a bismuth active bismuth citrate and a hydrazine peroxy phosphate. A portion of the initial color light will be absorbed and a fluorescent light different from the initial color light will be released. The initial color light and the camping light of the different wavelength spectrum are mixed into a white light source, and are emitted from the light emitting diode element to become a white light source. In addition, the composition ratio of different compounds in the fluorescent material can be changed to produce other white light intermediate color rays. The light emitting diode chip may be a nitride (InGaAiN) semiconductor H:\HU\LGC\A34276\97639\97639.doc 1303111 light emitting diode or zinc telluride (ZnSe) light emitting diode, especially A light-emitting diode of a nitride-based semiconductor is preferred. The alkaline earth oxide of the bismuth is mainly composed of at least one of magnesium oxide (Mg〇), oxidized about (CaO), oxidized pin (SrO) and barium oxide (BaO), and the activator is two. The price is 2+Eu2+. The main chemical formula of the bismuth active oxalate is A2Si〇4, wherein the A is selected from at least one of lanthanum, feed, strontium, magnesium (Mg), di (Zn) and cadmium (Cd). The main chemical formula of the bismuth bismuth citrate is ASi03, wherein the A is selected from at least one of strontium, calcium, barium, magnesium, zinc and cadmium. The main chemical formula of the bismuth-activated peroxyacid salt is (Ai x yBxCy) 2p2〇7, wherein the A is selected from at least one of hydrazine, about, lock, town, rhetoric and ore; b is selected from the group consisting of strontium and manganese. At least one of (Μη), molybdenum (Mo), and cerium (Ce); the C system is selected from at least one of lanthanum, bell, molybdenum, and cerium. The method of fabricating the LED device first provides an initial source that emits an initial light source, wherein the initial source is a fixed and electrically bonded photodiode wafer to a support carrier. The support carrier can be a lead frame or a substrate. And then covering a mold member on the initial light source, and placing a fluorescent material in the place where the initial light can be irradiated, the fluorescent material being a live alkaline earth oxide, a bismuth active citrate And consisting of at least one compound of a living peroxoate and a pin-activated peroxoate. After the fluorescent material absorbs a portion of the initial light, a wavelength of different fluorescent light can be generated, and the initial light and the fluorescent light can be mixed to make the light emitting diode element a multi-wavelength light source. [Embodiment] H:\HU\LGC\A34276\97639\97639.doc 1303111 In the field of materials of oxides, citrates, metasilicates, and peroxyphosphates, many materials have been found After the composition changes and the activator is activated, it will change its absorption spectrum and fluorescence spectrum. Fig. 1(a) to 1(b) are diagrams showing the luminescence spectra of ruthenium-activated bismuth bismuth citrate excited by a blue light-emitting diode wafer having a wavelength of 455 nm. It can be seen from Fig. 1(a) that the main peak of the erbium-activated cerium oxide emits light at a wavelength of about 540 nm. However, by changing the composition ratio of yttrium, lithium and ytterbium, the wavelength of the main peak of the emitted light can be adjusted, as shown in Fig. 丨(b), 'when the composition of yttrium is increased and the ratio of yttrium is decreased, the main peak wavelength of the emitted light is It is around 565 nm. The light emitting diode device provided by the invention mainly comprises a light emitting diode chip and a fluorescent material, wherein the fluorescent material can be activated by oxidation of the crucible disclosed in (a) and (b). Lithium strontium powder. When the illuminating diode chip emits initial light, such as blue light or ultraviolet light, the bismuth-activated quasi-citric acid pin-locking material absorbs a part of the light and generates fluorescent light of different wavelengths or wavelengths. The light-emitting diode element is then made into a multi-wavelength light source by mixing light. The above-mentioned fluorescent material is composed of a material of the soil-killing class of earthworms, which is activated by the actinic alkaline earth oxide, and the materials of the soil-tested quasi-salt and the peroxyacid salt. The light emitted by the light-emitting diode wafer generates light of more than one different wavelength by mixing light of different spectral bands to produce white light. Θ A schematic cross-sectional view of the light-emitting diode component of the present invention. The light-emitting diode element 20 mainly comprises a chip 22 of a light-emitting element fixed at a lead frame 23 cup type k, and the wafer 22 is respectively connected to the cathode 23a and the anode of the lead frame 23 by the metal wire 25 23b is electrically connected. H^HU\LGaA34276V97639\97639.doc 1303111 The wafer 22 is a light-emitting diode of a nitride-based semiconductor. The phosphor material 2丨 which can emit light of different spectral bands is filled in the cup type structure, so when the wafer 22 receives the external power supply, the initial light is emitted, and the fluorescent material 21 covering the periphery thereof is excited by the initial light. And thus producing a fluorescent light having a spectral band different from the initial light. The initial light and the fluorescent light are mixed into a white light, and finally the white light is transmitted through the mold member 24. The host of the fluorescent material 21 is composed of at least one compound of a living alkaline earth oxide, a bismuth active citrate, a bismuth active bismuth citrate and a bismuth active peroxy phosphate. Composed of. The alkaline earth oxide of barium can be selected from the group consisting of magnesium oxide (Mg〇), calcium oxide (CaO), oxidized pin (Sr0), barium oxide (Ba〇), and magnesium oxide (Mg, Ca, Sr, Ba) 0), oxidized pin 钡 ((Mg, Sr, Ba) 〇), oxidized words 钡 ((Ca, Sr, Ba) 0) and yttrium oxide ((Sr, Ba) 〇) at least one substance Composed of. And the use of divalent europium Eu2+ as an activator, so the earthworm-derived family oxide phosphor material can be a divalent europium-activated oxidized town feed pin ((Mgr, Cax, Sry, Baz) 0: sEu2+ ), the oxidized sputum ((Mga, Sfb5Bae) 0: SEu 2+), the divalent bismuth-induced oxidized lithium lanthanum ((Minute 8 η) 〇: 3Ε ιι2+)' where 〇^(^13, (^丄1^,^,4^b must satisfy the condition (r+x+y+z+s)=l, (a+b + c + s)=l and (i+j + s)=1 The main chemical formula of the active bismuth citrate is AjiO4, wherein the A is selected from at least one of strontium, calcium, strontium, magnesium, cadmium and cadmium. In addition, the fluorescent material of the bismuth citrate can be incorporated. Impurity impurities, the doping impurities are selected from the group consisting of gas (F), chlorine (C1), desert (Br), strontium (!), phosphorus (p), sulfur (s) and nitrogen H: \HU\LGC\A34276\ 97639\97639.doc -11 - ΐ3〇3ΐιι at least one. If the main system consists of calcium lanthanum citrate, its chemical formula is (Sr2-x-yBaxCay)Si04, where X and y only need to satisfy the following group Relational expression: OSxSO.8, 0$y$〇.8; 〇Sx$0.5, O^y^O.3; 〇·5 S xS 0· 7,0.2^ y $ 〇· 5 〇

The main chemical formula of the bismuth bismuth citrate is ASi 〇 3, wherein the A is selected from at least one of strontium, calcium, barium, magnesium, and cadmium. The fluorescent material of the bismuth bismuth phthalate may have doping impurities selected from at least one of fluorine, gas, bromine, iodine, phosphorus, sulfur, and nitrogen. If the main system consists of calcium bismuth citrate, the chemical formula is (Sr^^yBaxCaDSiO3, where x and y only need to satisfy one of the following groups: 〇. 8, 〇$ 〇. 8 ; 5, 〇SyS0. 3; 0·5$χ$〇·7,〇_2$y$〇5. The main chemical formula of the active peroxyphosphate is (Ai xyBxCy)2P2〇7, where A is selected from total, about, and At least one of magnesium, zinc and sulphur; B is at least one selected from the group consisting of bismuth, manganese, indium and bismuth; and C is selected from at least one of tank, manganese, indium and bismuth. The fluorescent material of the salt may have doping impurities, and the doping impurities are selected from at least ones of fluorine, chlorine, desert, iodine, phosphorus, sulfur and nitrogen. If the main system consists of peroxyphosphoric acid, its chemical formula For UUxMny) 2P2+z〇7, where x and yAzf are to satisfy the following: 0.03^x^〇.〇8, 0.06^ y^〇>16, 〇^z^〇>〇5〇of course the fluorescent The material 2 1 may also be formed by at least one of a compound or a mixture of the above materials in different ratios, so that the fluorescent material 21 can be excited by a ruthenium or more. Fluorescent light . As shown in Fig. 2, the powdery human y$ camping material 21 can be mixed with the liquid colloid first, and then the mixed H:\HU\LGC\ by dispensing, coating, J AI, 丽, etc. A34276\97639\97639.doc -12- 1303111 The phosphor material 21 is filled with the cup holder of the lead frame 23. FIG. 3 is another light-emitting diode element of the present invention. A schematic cross-sectional view in which the fluorescing fluorescent material 31 is distributed within the component 34. In the molding process, the molding compound of the fluorescent material u% bamboo 31 and the epoxy resin is injected into the κ so that the light-emitting device of FIG. 3 can be formed. . 4, FIG. 4 is a white light-emitting diode of the present invention, which is not considered. phase

Compared with the package appearance of the pin type in the above figures, FIG. 4 is a surface-adhesive (SMD) type of light-emitting diode element: the surface day 42 is fixed on the surface of the insulating layer 43c, and is formed by a metal wire type. The conductive copper is electrically connected to the N-type conductive (four) 43b, wherein the p-type conductive (four)..., the conductive copper case 43b and the insulating layer 43c constitute a substrate μ having a circuit. And a fluorescent material layer of at least one of the earthworms (4) acid salt, the barium salt, the barium activic acid salt or the barium activic acid salt may be deposited on the surface of the wafer 42, for example. : 铕 活 之 切 钡 钡 钡 钡 钡 钡 钡 钡 钡 钡 钡 钡 钡 钡 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 412 The activated calcium bismuth citrate is formed, and then the transparent mold member 44 is recognized, and the scorpion 44 is above the substrate 43. Of course, the wells in the phosphor layers 411 and 412 can also be mixed in the original material of the mold member 44. During the molding process, the same door and the main injection into the cookware. That is, the phosphors of the phosphor layers 411 and 412 are mixed with the colloid of the loose member 44 to form a rubber cake. When the mold is heated, the bait is poured into the mold. The inside of the rubber channel is solidified to form a gripping skill member 44. In addition, the powdery bismuth-activated fluorescent material can be first mixed with the liquid-spinning body to form a film, and the thin H:\HU\LGC\A34276\97639\97639.doc '13- 1303111 film is placed on the film. On the surface of the wafer 42, after the film receives appropriate energy, it melts and adheres to the surface of the die 42. The present invention can be applied in addition to the above-described implementations, and can be applied to a package type of lateral illumination, such as the perspective view of the light-emitting diode element of Fig. 5. The cathode 5 丨 and the anode on both sides of the light-emitting diode element 5 are bent in an l-shape, and the mold member 53 in the middle is used to atomize the wafer and the alkali-alkaline bismuth citrate, bismuth citrate, and At least one fluorescent material (not shown) of the living peroxyphosphate or cerium-activated peroxyphosphoric acid φ salt is coated, and the mixed white light rays are emitted laterally through the diamond window 54. The technical contents and technical features of the present invention have been disclosed as above, but those skilled in the art can still make various alternatives and modifications to the present invention based on the teachings and disclosures of the present invention. Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS: Figure 1 (a) ~ 丨 2) is an illuminating spectrum of bismuth bismuth bismuth citrate excited by a blue light emitting diode wafer having a wavelength of 455 nm; 3 is a schematic view of a second embodiment of a light-emitting diode element of the present invention; FIG. 4 is a schematic view showing a third embodiment of the light-emitting diode element of the present invention; 5 is a schematic view of a fourth embodiment of the light-emitting diode element of the present invention. [Description of main component symbols] 2〇Light-emitting diode element 21 fluorescent material H:\HU\LGC\A34276\97639\97639.doc -14- 1303111 22 Wafer 23 Lead frame 23a Cathode 23b Anode 24 Mold member 25 Metal wire 30 light-emitting diode element 31 fluorescent material 34 mold member 40 light-emitting diode element 42 wafer 43 substrate 43a P-type conductive copper foil 43b N-type conductive copper foil 43c insulating layer 44 mold member 45 metal wire 411, 412 fluorescent material 50 Light-emitting diode element 51 Cathode 52 Anode 53 Mold member 54 Diamond window H:\HU\LGC\A34276\97639\97639.doc -15-

Claims (1)

1303111 X. The scope of application for patents: 曰修(more)本本本094101516 Patent Application Chinese Patent Application Renewal (June 1997) A light-emitting diode component comprising: a phosphorescent wafer wafer capable of generating initial light, and egg light material, The fluorescent material is composed of a living earth oxide and doping impurities, and absorbs a part of the initial light to emit fluorescent light having a different wavelength, wherein the doping impurity is selected from fluorine, chlorine, At least one of acting, breaking, phosphorus, sulfur and nitrogen; The light emitting diode element is a multi-wavelength light source by mixing the initial light and the fluorescent light. 2. The luminescent diode component according to the claim ,, wherein the main system of the bismuth-activated alkaline earth oxide consists of magnesium oxide (Mg0), calcium oxide (Ca0), strontium oxide (SrO), and cerium oxide (Ba〇). ), magnesium oxide calcium strontium ((Mg, Ca, Sr, Ba) 0), magnesium oxide lithium ((Mg, Sr, Ba) 〇), calcium oxide strontium ((Ca, Sr, Ba) 及) and At least one of the oxides of the earthworms activated by cerium oxide ((Sr, Ba) cerium). 3. The luminescent diode element according to claim i, wherein the bismuth-based bio-organic oxide system uses divalent europium (Eu2+) as an activator. A light-emitting diode element according to claim 2, wherein the material is selected from the earth-killing earth oxides of the earthworms, and is present in at least one of a compound and a mixture formed in different composition ratios. According to the light-emitting diode element of claim 1, wherein the fluorescent material of the earth-removing earth oxide of the earthworm can be activated, the magnesium oxide calcium strontium (Mgr, Ca is called 〇 2+ 2+), 二 铕 铕 之 氧化 氧化 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( \97639\97639.doc 1303111 Srj)〇:sEu2+), in the chemical formula a, b, c, i, j, r, s, x, yh must satisfy the following relations and equations:, i, (r+X +y+Z+s)=l, (a+b+c+s)==1 and (i+j + s)=l. 6. A light-emitting diode element comprising: a light-emitting diode a wafer capable of generating initial light; and a glazing material consisting of at least one bismuth citrate and impurity-containing impurities, absorbing a portion of the initial ray to emit a wavelength a different fluorescent light, wherein the doping impurity is selected from at least one of chlorine, bromine, iodine, phosphorus, sulfur, and nitrogen; and the light emitting diode element is formed by mixing the initial light and the fluorescent light Multi-wavelength light source. The light-emitting diode element according to claim 6, wherein the main chemical formula of the bismuth active citrate is AjiO4, wherein the A system is selected from at least one of lithium, calcium, barium, magnesium, zinc and cadmium. 8. The light-emitting diode element according to claim 6, wherein the main system of the bismuth active bismuth citrate is composed of calcium lanthanum citrate, and the chemical formula is (Si^x_yBaxcay) si 〇 4, wherein X and y only need to meet the following set of ®SS: 〇$XS〇.8, 〇$y$〇8; 〇'X$〇5, 〇$y$〇3; 0.5 ^ 0·7,0·2 gy ^ 0.5 . 9. A light-emitting diode device comprising: a light-emitting diode chip capable of generating initial light; and a fluorescent material consisting of at least one bismuth-activated meta- citrate and impurity A portion of the initial light is absorbed to emit a fluorescent light of a different wavelength, wherein the doping impurity is selected from the group consisting of fluorine, chlorine, and bromine, 639. doc H:\HU\LGC\A34276\97639\97<-2 - 1303111 at least one of iodine, helium, sulfur, and nitrogen; the light-emitting diode element is a multi-wavelength light source by mixing the initial light and the fluorescent light. 10. A light-emitting diode component comprising: a light-emitting diode chip capable of generating initial light; and a fluorescent material consisting of at least one active bismuth acid hoof A portion of the initial light emits a fluorescent light having a different wavelength; and the light emitting diode element is a multi-wavelength light source by mixing the initial light and the fluorescent light. The light-emitting diode element according to claim 9 or 10, wherein the main chemical formula of the bismuth activator is ASi〇3, wherein the system A is selected from the group consisting of strontium, calcium, barium, magnesium, and remarks At least one of them. 2. The light-emitting diode element according to claim 9 or 10, wherein the main system of the bismuth-killing salt is composed of calcium bismuth citrate, and the chemical formula is (Sr2_x-yBaxCay)Si〇3 In the chemical formula, 乂 and y only need to satisfy the following set of relations: 〇$χ^ο.8, ο^γ^〇8; 〇^χ^〇5, 〇^0〇3; 〇·5 $ X $ 〇 7, 0.2 gyg 〇·5. 13. A light-emitting diode device comprising: a light-emitting diode wafer capable of generating initial light; and a fluorescent material consisting of at least one bismuth-activated peroxy phosphate and doped impurities And absorbing a portion of the initial light to emit fluorescent light having a different wavelength, wherein the doping impurity is selected from at least one of fluorine, chlorine, bromine, moth, ♦, sulfur, and nitrogen; H:\HU\LGC \A34276\97639\97639.doc 1303111 The light-emitting diode element is made into a multi-wavelength light source by mixing the initial light and the fluorescent light. 14. A light-emitting diode component comprising: a light-emitting diode chip capable of generating initial light; and a phosphor material comprising at least one active peroxometalate that absorbs A portion of the initial light emits a fluorescent light having a different wavelength; and the light emitting diode element is a multi-wavelength light source by mixing the initial light and the fluorescent light. The light-emitting diode element according to claim 13 or 14, wherein the main system of the bismuth-activated peroxyphosphate is composed of manganese lanthanum oxyphosphate having a chemical formula of (Al_x-yBxCy)2P2〇7, In the formula: A is selected from at least one of: Si, about, yttrium, town, zinc, and cadmium; 3 is selected from at least one of lanthanum, manganese, molybdenum, and lanthanum; At least one of the eyes and ornaments. 16. The light-emitting diode element according to claim 13 or 14, wherein the main system of the bismuth-activated bismuth phosphate consists of lithium perovskite bismuth manganese, the chemical formula of which is (Sr〗_x_yEux]VIny)2P2+z07 'In this chemical formula, x, 乂, and z need to satisfy the following relationships. · 0.03$ 0.08, 〇.〇6$ 0.16, 〇$ 〇〇5. 17. The light emitting diode device of claim 1, 6, 9, 10, 13 or 14 further comprising a lead frame for fixing the light emitting diode chip. 18. A light-emitting diode element according to claim 1, 6, 9, 10, 13 or 14, wherein the light-emitting diode element is an element that emits light from the side. 19. The light-emitting diode element according to claim 1, 6, 9, 10, 13 or 14, further comprising a substrate capable of fixing the light-emitting diode wafer. [.\HU\LGC\A34276\97639\97639.doc -4- 1303111 2 〇. According to the request, 1, 6, 9, 1 〇, the multi-wavelength ray line 0 1 3 or 14 after the light is mixed A polar body element 'a light in a white light and a white light intermediate color. 21. 22. The first diode element according to claim 3 or 10, wherein the fluorescent material directly covers the surface of the light emitting diode wafer. According to the light-emitting diode component of claim 6 or 10, the package further comprises a cladding • The glare-forms of the polar body wafer, the fluorescent material being distributed within the mold member. 23. The light-emitting diode component according to the invention, wherein the phosphor material directly covers the surface of the light-emitting diode wafer. The light-emitting diode element according to claim 15, wherein the fluorescent material directly covers the surface of the light-emitting diode wafer. 25. The light emitting diode component of claim 16, wherein the phosphor material directly overlies the surface of the light emitting diode wafer. 26. The light emitting diode device according to the invention, further comprising a mold member covering the light emitting diode chip, the fluorescent material being distributed in the mold member. The light-emitting diode element according to claim 15, further comprising a mold member covering the light-emitting diode B, wherein the fluorescent material is distributed in the mold member. I. The light-emitting diode component of claim 16, further comprising - a mold member encasing the light-emitting one-pole wafer, the fluorescent material being distributed within the mold member. A method of manufacturing a light-emitting diode element, comprising the steps of: electrically and electrically connecting a light-emitting diode chip on a support carrier; and placing a light-receiving material on the light-emitting diode chip to emit light It can be irradiated [AHU\LGC\A34276\97639\97639.doc 1303111 Wherever it goes, the glory material is made by a glimpse of the ^ arachnid oxide 盥 盥 盥 盥 盥 盥 盥 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 /,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, At least one of -, ',, fluoro" chlorine, bromine, arsenic, phosphorus, sulfur, and nitrogen, and at least one of the second doping impurities, at least one of argon, bromine, iodine, phosphorus, sulfur, and nitrogen; The fluorescent light is generated by causing the light-emitting diode wafer to emit a fluorescent material that excites the initial light to excite the active earth oxide, and the initial light and the fluorescent light are mixed to make the light-emitting diode element - multi-wavelength light source 0 30. LED according to claim 29 The manufacturing method of the component 'the main system of the lock-activated alkaline earth oxide is composed of magnesium oxide (Mg 〇), oxidized about (CaO), oxidized (Sr〇), cerium oxide ((iv)), oxidized town (four) (( Mg, Ca, Sr, Ba) 0), Magnesium oxide pin 钡 ((Mg, Sr, Ba) 〇), oxidized about pin 钡 ((Ca, Sr, Ba) 0) and oxidized Ming collar ((Sr, Ba) 〇) The lock-activated alkaline earth oxide consists of at least one of them. 31. The method of producing a light-emitting diode element according to claim 29, wherein the fluorescent material is selected from the group consisting of at least one of a compound and a mixture of the cerium-activated alkaline earth oxide and formed in different composition ratios. Form exists. 32. The method of fabricating a light-emitting diode element according to claim 29, wherein the bismuth-activated alkaline earth oxide fluorescent material is a oxidized granule of divalent strontium (Mgr, Cax, Sry) , Baz) 〇: sEu2+), bivalent strontium-activated magnesium oxide strontium ((Mga5Srb, Bae) 0: sEu2+), bivalent strontium-activated oxidative hydrazine ((Bai5 Srj) 0: sEu 2+), in the chemical formula a, b, c, i, j, r, s, H \HU\LGC\A34276\97639\97639 d〇c 1303111 乂, 7 and 2 must satisfy the following relationship and equation: 0$(3^,( :,丨山1^,:^,:/,:2) € 1, (r+x+y+z+s)=l, (a+b+c+s)=l and (i+j + The method for producing a light-emitting diode element according to claim 29, wherein the living earth oxide, the strontium, the living salt, the bismuth and the bismuth The phosphorescent material of oxyphosphate is based on divalent europium (Eu2+) as the activator. 3 4 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ At least one of the records. 35. The method of producing a light-emitting diode element according to claim 29, wherein the main system of the bismuth/salt acid salt is composed of a silver sulphate, and the chemical formula is (Sr2-x_yBaxCay)Si04. In the chemical formula, 乂 and y only need to satisfy the following set of relations: O^xSO.8, 0gyg0 8; 〇$χ$〇5, 3 ; 〇.5$ 0.7, 0.2$ 0.5. The method for producing a light-emitting diode element according to claim 29, wherein the main chemical formula of the bismuth activator is ASi〇3, wherein the system A is selected from the group consisting of strontium, calcium, barium, magnesium, zinc and At least one of cadmium. 37. The method of fabricating a light-emitting diode element according to claim 29, wherein the camping material of the pin-activated acid salt has a impurity, the impurity selected from the group consisting of fluorine, chlorine, bromine, and iodine. At least one of phosphorus, sulfur and nitrogen. 38. The method of producing a light-emitting diode element according to claim 29, wherein the main system of the lock-activated quasi-salt acid salt is composed of quasi-lithic acid (tetra) ruthenium, and the chemical formula is (4) - "BaxCay" Si〇3 In the chemical formula, y only needs to satisfy the following set of relations: ow〇.8, 〇W; 〇^〇5〇¥〇3; IVHU\LGC\A34276\97639\97639.doc -7- Ι3031Π 0.5 $ 0 7. The method of manufacturing a light-emitting diode element according to claim 29, wherein the main system of the lock-activated peroxyacid salt is composed of peroxyphosphoric acid. The chemical formula is (AwBxCy) 2P207, wherein: a is selected from at least one of 锶, dance, 钡, 镇, zinc, and ore, and B is at least one selected from the group consisting of 铕, 孟, 目, and ;; C And a method for producing a light-emitting diode element according to claim 29, wherein the fluorescent material of the lock-activated peroxyacid salt may have doping impurities The doping impurity is at least one of fluorine, chlorine, > odor, hard, scale, sulfur, and I. 41. The method of manufacturing the light-emitting diode element according to claim 29, The main system of the bismuth-activated peroxyphosphate is composed of bismuth manganese peroxyphosphate, and its chemical formula is (8Γι_χ_γΕιιχΜ%) 2Ρ2+ζ〇7, wherein χ, 7 and z need to satisfy the following relationships: 0.03^x ^0.08,〇.〇6$y$〇.i6, 42. The method of manufacturing the light-emitting diode element according to claim 29, wherein the support carrier is a lead frame. 43. The light-emitting diode according to claim 29. A method of manufacturing a body member, wherein the support carrier is a substrate. 44. The method of fabricating a light-emitting diode device according to claim 29, wherein the multi-wavelength light after the light mixing is one of a white light and a white light intermediate color. The method of manufacturing a light-emitting diode element according to claim 29, wherein the fluorescent material directly covers the surface of the light-emitting diode wafer. 46. The method of manufacturing the light-emitting diode element according to claim 29, further comprising The step of covering a module member on the photodiode wafer and the support carrier. 47. The method for manufacturing the light-emitting diode element according to claim 46, wherein the illumination H:\HU\LGC\A34276\97639\ 97639.doc .1303111 Material Fraction In the mold member. 48. According to claim 29, the potential of the light-emitting diode element is determined, wherein the technical material is powdered and mixed with the liquid colloid, the yarn is ^ + ..., and then dispensed, Coating, printing, and (4) medium-sized method of placing the mixed glare material on the surface of the photodiode wafer. The method of manufacturing the luminescent diode element according to claim 29, wherein the glare material comprises phosphor powder, It forms a mold with the colloid and forms a mold member after compression molding. 50. The method of fabricating a light-emitting diode element according to claim 29, wherein the luminescent material comprises powdery particles, and the liquid colloid is first mixed and formed into a film. After the film receives appropriate energy, it melts and adheres to the light-emitting diode. Body wafer surface. The method of fabricating a light-emitting diode element according to claim 46, wherein the lead frame allows the light-emitting diode element to form a side-emitting element. H:\HU\LGC\A34276\97639\97639.doc