JP2002118292A - Semiconductor light emitting device - Google Patents

Abstract

(57) [Problem] To provide a semiconductor light emitting device having an emission spectrum of three primary colors having emission peaks separated from each other. SOLUTION: The LED chip 2 is composed of a phosphor which emits light of a second and a third emission band when excited by light of a first emission band emitted from the LED chip 2. . The phosphor is a lanthanoid aluminate phosphor with Mn, and is included in the phosphor-containing coating member 11. Here, the light of the first emission band has a first peak emission P _B in the blue region. Second
The light of the emission band has a second peak emission P _G that is separated from the first emission peak P _B in the green region, third
The light of the emission band has a third emission peak P _R separated from the second peak emission P _G in the red region.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device for converting the wavelength of light emitted from a semiconductor light emitting element with a phosphor and emitting the light to the outside.

[0002]

2. Description of the Related Art FIG.
A part of the blue light emitted from the semiconductor light emitting element 2 is wavelength-converted by the phosphor contained in the coating member 19 into yellow light having a wide bandwidth. FIG. 1 is a cross-sectional view of a semiconductor light emitting device that emits white light to the outside by mixing colors (see, for example, Japanese Patent No. 2927279). The semiconductor light-emitting element 2 includes a blue light-emitting diode (LED) chip having a gallium nitride (GaN) -based compound semiconductor as a light-emitting layer (hereinafter, referred to as a chip).
It is called "LED chip". ), And the second wiring conductor 32
Is located in the top cup. LED chip 2
Are electrically connected to the first wiring conductor 31 and the second wiring conductor 32 by using bonding wires 25 and 26.

[0003] The coating member 19 is formed of the LED chip 2.
Is a transparent resin containing a phosphor that emits light when excited by the output light from the second wiring conductor 32, and is filled in the cup at the top of the second wiring conductor 32. Further, the semiconductor light emitting device according to the first prior art includes a coating member 19, an LED chip 2, bonding wires 25 and 26, a first wiring conductor 31.
And a sealing body (mold member) 8 that covers a part of the second wiring conductor 32. As shown in FIG. 14, the sealing body 8 is a transparent resin molded into a shell shape having a lens effect. Epoxy resin, urea resin, silicone and the like can be used as the transparent resin. The same transparent resin as that of the sealing body 8 can be used for the coating member 19. The coating member 19 is an LED from the front side.
The distribution on the chip 2 side is such that the concentration of the phosphor gradually increases.

The emission spectrum of the LED chip 2 is 40
It is a monochromatic emission peak wavelength having an emission peak from 0 nm to 530 nm. Phosphor (RE _1-x Sm x)
_{3 (Al y Ga 1-y} ) 5 O 12: it is Ce. Where 0
≦ x <1, 0 ≦ y ≦ 1, RE is at least one selected from Y and Gd. Phosphor contained in the coating member 19 _{(RE 1-x Sm x)} 3 (Al y Ga 1-y)
₅ O ₁₂ : Ce (hereinafter referred to as “YAG: Ce-based phosphor” or “Ce-attached YAG-based phosphor”). Where 0 ≦ x <1, 0 ≦ y ≦ 1, RE
Is at least one selected from Y and Gd. FIG. 16 shows the relative excitation efficiency of the YAG: Ce-based phosphor with respect to the excitation light wavelength.

A semiconductor light emitting device according to a first prior art is
Incandescent light bulbs and hot cathode fluorescent tubes, which are traditional tube-type white light sources,
Compared to a cold cathode fluorescent tube or the like, there are excellent advantages such as resistance to mechanical shock, less heat generation, no need for high voltage, no high-frequency noise generation, and no mercury-free environment. However, the semiconductor light emitting device according to the first prior art has a problem that color purity is poor and a vivid color cannot be expressed. Further, since the red light component is small, it is not possible to display an image with excellent color tone balance. Further, since the yellow light emitted from the YAG: Ce-based phosphor has a complementary color relationship with the blue light emitted from the blue semiconductor light emitting element, eyes are tired when humans continue to see the light emitted from the semiconductor light emitting device. Further, since the light emitted from the semiconductor light emitting device is synthesized by mixing the two wavelengths of the blue light emitted by the blue semiconductor light emitting element and the yellow light emitted by the YAG: Ce-based phosphor, the light of the mixed light that can be synthesized is mixed. There is also a problem that the chromaticity range is extremely narrow and it is not possible to produce light of various colors.

In order to overcome the drawbacks of the first prior art, a semiconductor light emitting device that emits ultraviolet light (hereinafter referred to as an ultraviolet light emitting device), a phosphor that emits blue light when excited by ultraviolet light, and a fluorescent light that emits green light Body, red light emitting phosphor 3
A technology that combines blue light, green light, and red light output from each of the three types of phosphors and emits the mixed light to the outside (hereinafter referred to as "second conventional technology") is proposed. Have been. The semiconductor light emitting device according to the second prior art shown in FIG. 15 includes an ultraviolet light emitting element 2UV and a fluorescent coating member 2 covering the periphery of the ultraviolet light emitting element 2UV.
0. The ultraviolet light emitting element 2UV is connected to the cup 16 formed at one end of the second wiring conductor 32.
The inside is bonded by an adhesive. UV light emitting element 2
UV has first and second electrodes. The first electrode of the ultraviolet light emitting element 2UV and one end of the first wiring conductor 31 are connected by a bonding wire 26.
Further, the second electrode of the ultraviolet light emitting element 2UV and one end of the second wiring conductor 32 are connected by a bonding wire 25. Furthermore, the ultraviolet light emitting element 2UV, the bonding wires 25 and 26, the first and second wiring conductors 31,
32 is sealed with a transparent sealing body 8 so as to cover one end and the fluorescent coating member 20.

The ultraviolet light emitting element 2UV has a GaN-based compound semiconductor layer and has an emission peak wavelength of 365 nm to 400 nm.
nm. These GaN-based compound semiconductor layers are
For example, silicon carbide (SiC) or sapphire (Al
It is formed on a substrate such as ₂ O ₃ ). The adhesive is a thermosetting conductive paste made of a one-part epoxy resin mixed with fine metal flakes such as gold or silver, or a thermosetting organic resin made of a one-part epoxy resin or the like and a light-transmitting ceramic powder. Is a light transmissive paste. The sealing body 8 is made of an organic resin such as an epoxy resin, a silicone resin, a polyester resin, and an acrylic resin having optical transparency, and is formed by a method such as potting and injection molding. The fluorescent coating member 20 is made of a transparent resin or the like in which three types of phosphors that emit blue light, green light, and red light are appropriately mixed when excited by ultraviolet light emitted from the ultraviolet light emitting element 2UV.

The use of the second prior art can solve many problems of the first prior art. That is, blue light, green light, and red light similar to those of a three-wavelength cold-cathode fluorescent tube were separated from each other by selecting three kinds of phosphors having different emission wavelength bands from phosphors that can be excited by ultraviolet light. An emission spectrum of three primary colors having an emission peak can be obtained. Therefore, the semiconductor light emitting device according to the second prior art can be suitably used also as a backlight of a transmission type color liquid crystal display device.

By adjusting the mixing ratio of the three kinds of phosphors of blue light, green light and red light, the same color tone balance of the displayed image as that of the external light can be obtained. Therefore, the semiconductor light emitting device according to the second prior art can be suitably used also as an auxiliary light source of a reflection type color liquid crystal display device.

Since the blue light, the green light, and the red light do not have a complementary color relationship with each other, they do not get tired even when the eyes are used for a long time. Therefore, the semiconductor light emitting device according to the second prior art can be suitably used as a general illumination light source.

Since the mixed color of blue light, green light and red light occupies a very wide area on the chromaticity diagram, light of various color tones can be produced. Therefore, the semiconductor light emitting device according to the second conventional technique can be suitably used for applications requiring various color tones and rich color expression.

[0012]

As described above, the first prior art has the following problems.

(A) The first problem of the first prior art is as follows.
When used as a backlight white light source, color purity is poor and a vivid color cannot be expressed. In a transmission type color liquid crystal display device, a three-wavelength cold cathode fluorescent tube having emission spectra of three primary colors of blue, green and red separated from each other is usually used as a backlight. FIG. 19 shows an example of the emission spectrum of a three-wavelength cold cathode fluorescent tube. The reason why a three-wavelength cold cathode fluorescent tube is used for the backlight of a transmissive color liquid crystal display device is that the transmission spectrum of the blue, green, and red primary color filters constituting each pixel of the transmissive color liquid crystal display device is broad. Therefore, color expression with high color purity cannot be expected only with the transmission characteristics of the color filters. FIG.
0 shows an example of the transmission spectrum of the color filter,
It can be seen that it has a fairly broad transmission spectrum. Therefore, in a transmission type color liquid crystal display device,
The spectrum of the transmitted light at each pixel of the three primary colors of green and red is actually determined by the emission spectrum of the three-wavelength cold cathode fluorescent tube, and the color filter converts the transmitted light spectrum of one pixel (for example, red) into the other two primary colors. It merely plays a role of shielding light in a rough range so that components (for example, green and blue) are not mixed. However, the semiconductor light-emitting device according to the first prior art employs YAG: Ce as shown in FIG.
Since the emission spectrum of the phosphor is very broad,
As shown in the above, the light source must have a very broad emission spectrum. Therefore, when the semiconductor light emitting device according to the first prior art is used for a transmission type color liquid crystal display device, the transmission light spectrum of each pixel must be determined by the transmission spectrum of the color filter, and as a result, the color purity is poor. The display device cannot express vivid colors. Therefore, the semiconductor light emitting device according to the first prior art is not suitable for a backlight of a transmission type color liquid crystal display device.

(B) The second problem of the first prior art is as follows.
The point is that display with excellent color tone balance cannot be performed because the amount of red light component is small. Reflective color liquid crystal display devices are being developed for mobile phones, PHS, PD
A. It is being widely used in mobile devices such as small notebook computers. The reflection type color liquid crystal display device is different from the transmission type color liquid crystal display device in that color display is usually performed by using reflected light of external light such as sunlight irradiated on the surface of the display device. However, since the display cannot be performed in a dark place where no external light exists, an auxiliary light source (front light) that emits white light is provided on the inner surface of the display device screen to cope with such a case. However, when the semiconductor light emitting device according to the first prior art is used as an auxiliary light source of a reflective type color liquid crystal display device, as shown in FIG.
Since the red light component of the emission spectrum of the AG: Ce-based phosphor is originally small, the light source must have a light emission spectrum with a relatively small red light component as shown in FIG. In general, the color tone balance of a reflective color liquid crystal display device is designed based on the spectrum of sunlight, which is a main external light source. However, as is well known, since the spectrum of sunlight contains many red components, when the semiconductor light emitting device according to the first prior art is used as an auxiliary light source of a reflective color liquid crystal display device, the auxiliary light source is turned on in a dark place or the like. In this case, since the red light component is small, the red color is displayed dark, and as a result, there occurs a problem that the color tone balance of the entire display image is shifted as compared with the external light.

(C) Further, the third problem of the first prior art is that the yellow light emitted from the YAG: Ce-based phosphor has a complementary color relationship with the blue light emitted from the blue semiconductor light emitting element, so that the semiconductor light emission is difficult. If a human keeps watching the light emitted from the device, his eyes will be tired. According to cerebral physiology research,
For example, human eyes become tired if they continue to watch light having complementary colors, such as blue light and yellow light, at the same time. In the first conventional technique, light emitted to the outside is created just by mixing a blue light generated by a blue semiconductor light emitting element and a yellow light generated by a phosphor. Therefore, for example, when a semiconductor light emitting device is used as a general illumination light source, it is apparent that the user will be tired if the user uses the light for a long time such as reading. This problem is essentially inevitable as long as it is a light-emitting device that produces white light by mixing two colors that are complementary colors.

(D) A fourth problem of the first prior art is that the light emitted from the semiconductor light emitting device is caused by the difference between the blue light emitted by the blue semiconductor light emitting element and the yellow light emitted by the YAG: Ce-based phosphor. Because it is synthesized by mixing light of two wavelengths,
The point is that the chromaticity range of the mixed color light that can be synthesized is extremely narrow, and light of various colors cannot be produced. According to the optical theory, when light of two wavelengths (for example, light a and light b) is mixed, the chromaticity coordinates of the light a on the chromaticity diagram are (x _a , ya _a
), The chromaticity coordinates of the light _{b (x b, y b)} , the chromaticity coordinates of the mixed light of the light a and the light b (x _m, When y _m), (x _m,
y _m) is (x _a, y _a) and (x _b, y _b) two points in connecting it straight line of, and the point determined by the strength and intensity of the light b light a, i.e. light a is strong if (x _a, y _a) to close, if the light b is strong (x _b, y _b) located closer. FIG.
FIG. 1 shows a chromaticity diagram for explaining the color mixing mechanism of the first conventional technique. In the first prior art, light emitted to the outside is produced by mixing two wavelengths of light, i.e., blue light emitted from a blue semiconductor light emitting element and yellow light emitted from a YAG: Ce-based phosphor. The optical theory in the case of mixing light of two wavelengths can be applied as it is. That is, the light a is blue light emitted from the blue semiconductor light emitting element, and the light b is YAG: C
Assuming that the e-type phosphor emits yellow light, the light emitted from the semiconductor light emitting device according to the first prior art is the chromaticity coordinates of the blue light emitted from the blue semiconductor light emitting element and the yellow light emitted from the YAG: Ce phosphor. It can only exist on a straight line connecting the chromaticity coordinates of light. Therefore, the first prior art cannot produce light having a very limited color tone as it is. In order to improve this drawback, it is common practice to add another element to YAG, which is the base material of the YAG: Ce-based phosphor, to change the composition and shift the emission wavelength. For example, when Ga is added, the wavelength can be shifted to the short wavelength side, and when Gd is added, the wavelength can be shifted to the long wavelength side. However, when these elements are added at an excessively high concentration, the luminous efficiency decreases in the case of Ga, and the temperature quenching (a phenomenon in which the luminous efficiency decreases due to an increase in temperature) intensifies in the case of Gd. Since the important properties of the body deteriorate significantly, the composition can be adjusted only within a limited range in practical use. FIG. 22 shows a chromaticity range in which the semiconductor light emitting device according to the first conventional technique can emit light. In the chromaticity diagram of FIG. 22,
With the chromaticity coordinates of the emission of the blue semiconductor light emitting element as the apex, the inside of the narrow fan-shaped shape connecting the chromaticity coordinates of the practically usable YAG: Ce-based phosphor is the color that the semiconductor light emitting device can emit. Degree range. As described above, the first conventional technique can generate only light having a tone in a chromaticity range that is very narrow as compared with the entire area of chromaticity. Therefore, the first prior art is
Even if the composition of the YAG: Ce-based phosphor is adjusted, only light of a very limited color tone can be produced, and it cannot be used for applications requiring light of various color tones.

On the other hand, in the second prior art, these first
Although the problem of the prior art is solved, the following new problem arises which is not a problem in the first prior art.

(A) First, a first new problem is that the ultraviolet ray emitted from the ultraviolet light emitting element 2UV deteriorates the fluorescent coating member 20 and the sealing body 8. Generally, a transparent organic resin such as an epoxy resin, which is an organic polymer compound, is used for the fluorescent coating member 20 and the sealing body 8. However, when these resins are irradiated with ultraviolet rays, the bond of the organic polymer is gradually broken. As a result, yellowing or cloudiness of the resin is caused, and the light transmittance is reduced. In particular, those having a benzene ring in the structure thereof are extremely deteriorated because their absorption regions exist around 370 nm to 400 nm which is the emission wavelength of the ultraviolet light emitting element 2UV. Further, the ultraviolet light emitting element 2UV has a higher forward voltage than the blue semiconductor light emitting element used in the first conventional technique. For example, if the emission wavelength is 47
While the blue semiconductor light emitting device of 0 nm has a forward voltage of about 3.5 V at a forward current of 20 mA, the emission wavelength is 380 n
m of the UV light emitting element 2UV is about 4.
The forward voltage is 0V. Therefore, when the same lighting current is applied, the ultraviolet light emitting element consumes more power than the blue semiconductor light emitting element, the temperature of the light emitting element rises accordingly, and the fluorescent coating member 20 surrounding the light emitting element is increased.
The temperature of the resin is also increased. When the temperature of the resin rises, the binding of the organic polymer is loosened and the polymer is easily decomposed. In particular, at the interface between the ultraviolet light emitting element 2UV and the fluorescent coating member 20, the intensity of the ultraviolet light radiated from the ultraviolet light emitting element 2UV is large, and the temperature rise due to the heat generation of the ultraviolet light emitting element 2UV is large. Degradation occurs intensively. Specifically, in a relatively short time, the fluorescent coating member 20 at the interface with the ultraviolet light emitting element 2UV is decomposed and separated, and the total light reflection at the interface is increased, so that the light extraction efficiency of the ultraviolet light emitting element 2UV is increased. And the light transmittance at the interface of the fluorescent coating member 20 also decreases due to the occurrence of yellowing and cloudiness. Further, the surface of the ultraviolet light emitting element 2UV is contaminated by an ionic substance generated by the decomposition of the fluorescent coating member 20, and the leakage current increases, so that the current contributing to light emission also decreases. After a relatively long period of time, the entirety of the fluorescent coating member 20 and the sealing body 8 are yellowed by the action of ultraviolet light, and the light transmittance is reduced, so that the light emitted from the semiconductor light emitting device further decreases. Therefore, in the semiconductor light emitting device according to the second conventional technique using the ultraviolet light emitting element 2UV, the light emitted from the semiconductor light emitting device to the outside gradually decreases due to the various causes of deterioration described above when the power supply is continued. There was a problem.

(B) The second problem of the second prior art is as follows.
The point is that instead of one kind of phosphor as in the first prior art, three kinds of phosphors of blue, green and red are required. In the case of manufacturing the semiconductor light emitting device according to the second prior art, three kinds of phosphors of blue, green and red are mixed very accurately so that light emitted to the outside has a desired color tone. There must be. For this reason, as compared with the semiconductor light emitting device according to the first related art, the work process becomes complicated, which causes a rise in manufacturing cost. Blue, green and red 3
Variations in the composition of the phosphors cause variations in the color tone between production lots and between products, leading to a reduction in production yield, an increase in production cost, and a decrease in product quality. Further, when the specific gravities of the three types of phosphors of blue, green and red are different, the distribution of the phosphors in the fluorescent coating member 20 varies, so that the color tone unevenness and color variation of the semiconductor light emitting device occur, and the production yield also decreases. Manufacturing costs increase and product quality decreases. Therefore, the second using the ultraviolet light emitting element 2UV
According to the prior art, it is extremely difficult to make a semiconductor light emitting device which is inexpensive and excellent in quality.

(C) A third problem of the second prior art is that ultraviolet light, which is the excitation light of the phosphor, easily leaks out of the semiconductor light emitting device. In general, ultraviolet rays have high energy, and thus not only degrade resin and the like, but also damage and destroy living cells, so that receiving such strong irradiation is not good for the human body. For example, as is well-known, the sun's rays also contain ultraviolet rays. Among them, particularly short-wavelength ultraviolet rays cause various effects on our body, from inflammation of the eyes called "snow-eye" to the occurrence of skin cancer. Failure occurs. The ultraviolet light emitting element 2UV used in the second prior art is a near ultraviolet light having a relatively small energy of about 380 nm, but has a fact of deteriorating the resin as described above. There is no guarantee that eyeballs will not be harmed if continued. Moreover, since the wavelength is at the lower limit of the human visual sensitivity range, it is almost invisible to the eyes and cannot be detected even when receiving strong irradiation, so that the danger must be said to be considerably high. In the second conventional technique, the ultraviolet light of the ultraviolet light emitting element 2UV leaks to the outside because the phosphor particles do not fill the entire fluorescent coating member 20, but because there is a gap between the phosphor particles. This is because there is ultraviolet light that goes out through the device. Therefore, in order to prevent this, it is considered sufficient to mix a large amount of phosphor in the fluorescent coating member 20 and increase the phosphor concentration in the fluorescent coating member 20 as much as possible. In addition, it is considered that by doing so, the light whose wavelength is converted by the phosphor increases, and the visible light component of the semiconductor light emitting device also increases. However, such a formulation actually reduces the amount of ultraviolet rays that leak, but also reduces the visible light component. The factors are
The light scattering by the phosphor increases and the fluorescent coating member 20
This is because the light transmittance of the film decreases. In general, it cannot be said that phosphors always have high light transmittance in the emission wavelength range. In addition, since many have relatively high refractive indexes, irregular reflection is likely to occur at the interface with the fluorescent coating member 20 having a low refractive index. Therefore, when the phosphor concentration in the phosphor coating member 20 is relatively low,
As the concentration is increased, the visible light component certainly increases, but when the concentration is further increased starting from a certain phosphor concentration, the visible light component decreases in the opposite manner. That is, when focusing on the amount of the visible light component, there is an optimum value of the phosphor concentration. In addition, if a large amount of the phosphor is mixed in the fluorescent coating member 20, the fluidity of the fluorescent coating member 20 is extremely reduced, and it becomes impossible to inject the fluorescent substance around the semiconductor light emitting device. Therefore, in the second prior art, since there is a conflicting relationship in that ultraviolet rays leak when priority is placed on brightness, and brightness decreases when leakage of ultraviolet rays is suppressed, so that a safe and bright semiconductor light emitting device can be obtained. Can not do. As another method for suppressing the leakage of ultraviolet light, a method of adding an ultraviolet absorbent to the sealing body 8 is also conceivable.
The extra materials and processes increase the manufacturing cost, and do not adversely affect the properties of the sealing body 8 such as moisture resistance, and intentionally discard the ultraviolet component that should originally contribute to the generation of the visible light component. It goes without saying that it is not a practically good solution.

As described above, the semiconductor light-emitting device according to the first prior art has various advantages as compared with the conventional tube-type light source.
Performance that cannot be suitably used for light sources in fields where great progress is expected in the future, such as transmission type color liquid crystal display devices, reflection type liquid crystal display devices, and general illumination light sources, due to restrictions caused by the emission spectrum of phosphors There was a problem above.

In the semiconductor light emitting device according to the second prior art, since ultraviolet light is used, safety against light sources in the fields of a transmission type color liquid crystal display device, a reflection type liquid crystal display device, a general illumination light source and the like is secured. In addition, there is a problem in that the production cost is increased due to the necessity of accurately compounding the three kinds of phosphors.

In view of the above problems, the present invention has the same three primary wavelength emission spectra of blue light, green light and red light as those of a three-wavelength cold cathode fluorescent tube, and the spectrum is transmitted. It is an object of the present invention to provide a semiconductor light emitting device which has a good match with the transmission spectrum of a color filter of a type color liquid crystal display device.

Another object of the present invention is to freely adjust the component ratio between green light and red light of the phosphor and also freely adjust the component ratio between blue light of the LED chip and light emission of the phosphor. Another object of the present invention is to provide a semiconductor light emitting device capable of obtaining the same color tone balance of a display image as that of external light.

Still another object of the present invention is to provide a semiconductor light emitting device which conforms to human physiology, does not tire the eyes even when used for a long time, and can be suitably used as a general illumination light source. It is to provide.

Still another object of the present invention is to provide a semiconductor light emitting device capable of producing light of various tones in an extremely wide chromaticity range.

Still another object of the present invention is to provide a highly reliable semiconductor light emitting device with little deterioration of a coating member, a sealing body, and the like.

Still another object of the present invention is to provide a simple structure,
An object is to provide a semiconductor light emitting device which is inexpensive and excellent in mass productivity.

Still another object of the present invention is to make it easy to manufacture,
An object of the present invention is to provide a semiconductor light emitting device with less color tone unevenness and color tone variation.

Still another object of the present invention is to provide a semiconductor light emitting device which can emit safe and bright light without leakage of ultraviolet rays.

[0031]

To achieve the above object, the present invention provides a semiconductor light emitting device that emits light in a first emission band, and a semiconductor light emitting device that is excited by the light in the first emission band. The gist is a semiconductor light emitting device including a phosphor that emits light in the second and third emission bands.
The semiconductor light emitting device of the present invention emits light having a spectrum including first to third emission bands having emission peaks separated from each other. Here, the light of the first emission band has a first emission peak in a blue region. For example, the wavelength of the first emission peak may be in a blue region of 420 nm to 480 nm. The light of the second emission band has a second emission peak separated from the first emission peak in the green region, and the light of the third emission band is separated from the second emission peak in the red region. It has an emission peak of 3. That is, according to the semiconductor light emitting device of the present invention, it is possible to emit blue light, green light, and red light in the same three-primary color spectrum consisting of three light emission peaks separated from each other, similar to the three-wavelength cold cathode fluorescent tube. . The three primary color spectra composed of these three emission peaks are in good agreement with the transmission spectra of the color filters of the transmission type color liquid crystal display device shown in FIG.

The phosphor of the semiconductor light emitting device of the present invention is a lanthanoid aluminate phosphor added with manganese (Mn) (hereinafter referred to as “Mn-added lanthanoid aluminate phosphor”). Is preferred. As the lanthanoid aluminate phosphor with Mn,
Chemical formula LaAl ₁₁ O ₁₈ : Mn ²⁺ or La ₂ O ₃ .11
A phosphor represented by Al ₂ O ₃ : Mn ²⁺ is preferable. Alternatively, the chemical formula La _1-x Al _{11 (2/3) + x} O ₁₉ : Mn
A phosphor represented by 2 ⁺ _x (where 0.1 ≦ x ≦ 0.99) may be used. Furthermore, the chemical formula (La, Ce) Al ₁₁ O ₁₉ : Mn
Phosphors represented by ²⁺ , (La, Ce) MgAl ₁₁ O ₁₉ : Mn ²⁺ or the like may be used. In these lanthanum aluminate phosphors with Mn, the component ratio between green light and red light can be freely adjusted by adjusting the Mn concentration. As described above, by adjusting the Mn concentration, the balance between the blue light of the semiconductor light emitting element and the green light / red light of the phosphor can be freely adjusted. Can be white light. Therefore, the semiconductor light emitting device of the present invention can be suitably used for a backlight of a transmission type color liquid crystal display device and the like. Further, by adjusting the blending ratio of the phosphors, the same color tone balance of the display image as that of the external light can be obtained. Since the emission spectrum of the lanthanoid aluminate phosphor with Mn has a spectrum that also spreads to the deep red region, the component ratio of green light and red light can be freely adjusted by adjusting the Mn concentration. I can do it. That is, the semiconductor light emitting device of the present invention can be a semiconductor light emitting device having the same color tone balance as an external light source such as sunlight. Therefore, the semiconductor light emitting device of the present invention can be suitably used as an auxiliary light source of a reflection type color liquid crystal display device.

The emission spectrum of the semiconductor light emitting device of the present invention is constituted by blue light, green light, and red light,
Since the colors are not complementary to each other, the eyes are not tired even when used for a long-time use. Therefore, it can be suitably used as a general illumination light source.

Further, the emitted light is composed of blue light, green light and red light, and the mixed color light occupies a very wide area on the chromaticity diagram, so that a rich color expression of various color tones is required. It can also be used suitably for the intended use.

Further, in the semiconductor light emitting device of the present invention, since the light emitting component does not contain any ultraviolet light, the coating member or the sealing body for sealing the light emitting element is not deteriorated by the ultraviolet light. Therefore, the semiconductor light emitting device of the present invention
It can also be suitably used for applications requiring high reliability. Further, since no ultraviolet light is contained in the light-emitting component, there is no danger of damaging the eyeball or the like, so that the light-emitting component can be safely used for applications such as general lighting.

In addition, since the semiconductor light emitting element and one kind of phosphor are combined in a simple structure, they are inexpensive and excellent in mass productivity. As the semiconductor light emitting device, a blue semiconductor light emitting device having a GaN-based compound semiconductor layer as a light emitting layer is preferable. The “light emitting layer” may have a double hetero (DH) structure including an n-type cladding layer, an active layer, a p-type cladding layer, and the like. Then, the phosphor may be contained in the coating member. That is, if the coating member containing the phosphor is disposed so as to cover the periphery of the semiconductor light emitting element, or is disposed so as to be in contact with only one main surface of the semiconductor light emitting element, the output light of the semiconductor light emitting element can be obtained. Thereby, the phosphor can be excited. As the coating member containing the phosphor, an organic resin having a light transmitting property such as an epoxy resin, a urea resin, a silicone resin, a polyester resin, an acrylic resin, and a polyimide resin can be used. Further, the coating member is mainly composed of a metalloxane bond (MOM bond, M: metal) obtained by solidifying a liquid ceramic coating agent using metal alkoxide, ultrafine metal oxide or polysilazane as a starting material. Polymetalloxane gel may be used. Furthermore, the coating member
It may be composed of an inorganic / organic composite polymer in which an organic resin monomer is introduced by modifying a part of the functional group of the metal alkoxide. In addition, in order to form a plate-shaped phosphor chip, a resin,
A phosphor powder is mixed and solidified on a coating material such as a low-melting glass or a ceramic coating agent, and this plate-shaped phosphor chip is connected to one of the main surfaces of the semiconductor light emitting element via a light-transmitting adhesive. May be opposed. Further, the phosphor chip may be a single crystal or a sintered body of the phosphor. With such a simple structure consisting of a combination of a semiconductor light emitting element, one kind of phosphor and a coating member,
The semiconductor light emitting device of the present invention can be easily used for various purposes.

In particular, according to the present invention, since only one kind of phosphor is required, the production is easy, and the color tone unevenness and the color tone variation are small. It should be noted that there was a disadvantage that the three kinds of phosphors of blue, green and red had to be blended very accurately.) That is, since only one kind of phosphor may be used, it is not necessary to mix a plurality of phosphors in a predetermined mixture ratio in a complicated manner, and the working process is simplified and the manufacturing cost can be reduced. Further, there is no problem of variation in color tone between production lots and products due to variation in the composition of the phosphor. Further, there is no problem of uneven color tone and uneven color tone due to uneven distribution of the phosphor in the coating member due to the difference in specific gravity of the three types of phosphors of blue, green and red. For this reason, the manufacturing yield of the semiconductor light emitting device of the present invention is improved, the manufacturing cost is reduced, and the quality of the product is also improved. Therefore, it becomes easy to provide an inexpensive and high quality semiconductor light emitting device. Also, it can be suitably used for applications requiring high display quality.

In addition, the semiconductor light-emitting device of the present invention is more resistant to mechanical shock and generates less heat than conventional incandescent lamps, hot-cathode fluorescent tubes, and three-wavelength cold-cathode fluorescent tubes as tube-type white light sources. Since it has the advantages of no need for high voltage, no high-frequency noise, and no mercury, it is environmentally friendly, so it can be expected as a full-scale next-generation solid-state white light source.

[0039]

Next, first to seventh embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimension, the ratio of the thickness of each layer, and the like are different from actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. In addition, it is needless to say that the drawings include portions having different dimensional relationships and ratios.

(First Embodiment) A semiconductor light emitting device according to a first embodiment of the present invention comprises an LED chip 2 as a semiconductor light emitting element and an LED chip 2 as shown in FIG.
And a phosphor that emits light of the second and third emission bands when excited by light of the first emission band emitted from the light emitting device. In the first embodiment,
The phosphor is included in the phosphor-containing coating member 11,
This phosphor-containing coating member 11 covers the periphery of the LED chip 2.

Further, the semiconductor light emitting device according to the first embodiment includes a first wiring conductor (anode lead) 31 and a second wiring conductor (anode lead) 31.
It has a wiring conductor (cathode lead) 32, and a cup 16 is formed at one end of the second wiring conductor 32. The first and second wiring conductors 31 and 32 are made of a metal plate material such as aluminum (Al), copper (Cu), Cu-Fe,
Copper alloys such as Cu-Cr, Cu-Ni-Si, and Cu-Sn, nickel-iron alloys such as Ni-Fe and Fe-Ni-Co, and composite materials of copper and stainless steel can be used. In addition, nickel (Ni)
It may be constituted by plating, gold (Au) plating, silver (Ag) plating, or the like. In the cup portion 16, a blue semiconductor light emitting element (LED chip)
2 are bonded by an adhesive (not shown). The blue semiconductor light emitting element (LED chip) 2 has an anode electrode and a cathode electrode (not shown) formed on the surface. The anode electrode of the LED chip 2 and one end (top) of the first wiring conductor 31 are connected to the bonding wire 2
6 are connected. Similarly, the cathode electrode and one end of the second wiring conductor 32 are connected by a bonding wire 26. Further, the LED chip 2, the bonding wires 25 and 26, the first and second wiring conductors 31 and 3,
A part of 2 and the phosphor-containing coating member 11 are covered with a transparent sealing body 8 having a shell shape. Note that the first wiring conductor 31 may be a cathode lead and the second wiring conductor 32 may be an anode lead, and may be connected to the corresponding cathode electrode and anode electrode by bonding wires, respectively.

As the LED chip 2 as a semiconductor light emitting element, Ga LED such as GaN, InGaN, InGaAlN or the like is used.
A blue LED chip 2 having an N-based compound semiconductor layer as a light emitting layer is preferable. The blue LED chip 2 has an emission peak wavelength (first emission peak) of 420 nm to 480.
nm. Generally, these GaN-based compound semiconductor layers are formed by epitaxial growth on a conductive or insulating substrate such as SiC or sapphire.

The bonding wires 25 and 26 are made of gold (A
u), silver (Ag), aluminum (Al), copper (Cu)
And the like. An adhesive (not shown) for bonding the LED chip 2 to the cup bottom 16a is a thermosetting conductive paste made of a one-part epoxy resin or the like mixed with fine metal flakes such as gold or silver, or a one-part epoxy resin. A light-transmitting paste obtained by mixing a light-transmitting ceramic powder with a thermosetting organic resin made of a resin or the like, or a light-transmitting inorganic adhesive using metal alkoxide or ultrafine metal oxide as a starting material.

The sealing body 8 is made of an epoxy resin, a urea resin, a silicone resin, a polyester resin,
It is made of an organic resin such as an acrylic resin or a polyimide resin, or an inorganic / organic composite polymer in which a functional group of a metal alkoxide is partially modified to introduce an organic resin monomer, and is formed by a method such as potting or injection molding.

The phosphor-containing coating member 11 is made of LE
Blue light emitted from the D chip 2 (of the first emission band
Light) and have emission peaks separated from each other.
Green light (light in the second emission band) and red light (third light)
And a visible light.
Resin transparent in the region, especially the metalloxane bond (M
Liquid ceramic mainly composed of -OM bond, M: metal)
From polymetalloxane gel with solidified coating agent
It is configured. Phosphor is added with manganese (Mn)
One of the lanthanoid aluminate phosphors
Chemical formula LaAl ₁₁O₁₈: Mn²⁺Or La_TwoO_Three・ 1
1Al_TwoO_Three: Mn²⁺Lanthanum (La) Al represented by
It is a minate phosphor. Regarding phosphors,
Mn as a system phosphor²⁺And Eu²⁺UV by co-attachment of
La that is a line-excited phosphor_TwoO_Three・ 11Al_TwoO_Three: E
u²⁺Mn²⁺It has been known. This phosphor is exposed to ultraviolet light.
Eu excited²⁺Mn that received more energy
²⁺Has a light emitting mechanism for emitting light. However, the present invention
The inventor has proposed a composition of this phosphor that does not contain Eu, that is, La
_TwoO_Three・ 11Al_TwoO_Three: Mn²⁺Is efficiently excited by blue light
And by adjusting the amount of Mn added,
The emission peaks P separated from each other as shown in FIG._G, P_R
Having two emission bands of green and red
I saw it.

The divalent manganese ion (Mn ²⁺ ) used as the auxiliary material of the La aluminate phosphor differs in the base material because its emission wavelength is sensitive to the size of the crystal field of the base material. The presence of the Mn ²⁺ position results in multiple emission bands.
La aluminate is a base material having a spinel structure,
Mn ²⁺ in which accounts for four-coordinate and the six-coordinate, as shown in FIG. 3, the green emission band of the emission peak _{P G} and 517nm, respectively (second emission band) and a 690nm emission peak P And a red emission band (third emission band) as _R. FIG. 2 shows the relationship between the excitation wavelength of the lanthanoid aluminate phosphor with Mn and the relative excitation efficiency. The solid line in FIG. 2 is the excitation spectrum of red emission, and the broken line is the excitation spectrum of green emission. It can be seen that the lanthanide aluminate phosphor with Mn is efficiently excited in a blue region centered at 450 nm.

The ratio of the green emission band and the red emission band of the lanthanide aluminate phosphor with Mn shown in FIG. 3 is determined by the amount of Mn added. FIG. 5 shows the relationship between the amount of Mn added and the emission color of the lanthanoid aluminate phosphor with Mn. When the addition amount of Mn is small, only a green emission band appears, but when the addition amount is increased, a red emission band appears, and when the addition amount is further increased, only a red emission band is changed. Therefore, the emission color of the lanthanoid aluminate phosphor with Mn can be freely changed in a wide range from green to red by adjusting the amount of Mn added.

Therefore, by combining the emission spectrum of the blue semiconductor light emitting device and the emission spectrum of the lanthanoid aluminate phosphor with Mn, three emission peaks P _B and P corresponding to the three primary colors as shown in FIG. _G ,
Spectrum having a P _R is obtained. That is, the lanthanoid aluminate phosphor with Mn is excited by a part of the blue light (light of the first emission band) of the blue semiconductor light emitting element, and the green light (the second emission band of the second emission band) as shown in FIG. light)
Two emission peaks P _G of the red light (light of a third emission _band), the spectrum combining the P spectrum with _R is obtained, which the original blue light wavelength has not been converted,
A semiconductor light emitting device that emits light of three primary colors of blue light, green light, and red light that are discrete from each other can be realized. This 3
The emission spectrum composed of two emission bands is shown in FIG.
Unlike the emission spectrum of the first prior art shown in FIG. 8, the emission spectrum has a spectrum similar to that of the three-wavelength cold cathode fluorescent tube shown in FIG. Further, the emission spectrum composed of the three emission bands shown in FIG. 4 is also in good agreement with the transmission spectrum of the color filter of the transmission type color liquid crystal display device shown in FIG.

The lanthanide aluminate phosphor with Mn is produced, for example, as follows.

(A) First, the raw materials La ₂ O ₃ and Al
₂ O ₃ MnF ₂ is weighed in accordance with the desired stoichiometric ratio, an appropriate amount of flux (flux) is added thereto, mixed in ethanol using a ball mill, and then filtered and dried.

(B) Next, the dried raw material is put into a high-purity alumina crucible, and calcined at 1200 ° C. for 2 hours in a weakly reducing nitrogen atmosphere mixed with 5% hydrogen.

(C) After the completion of the calcination, once cooled to room temperature,
After the sintered body is pulverized, it is sieved and put into a high-purity alumina crucible again, at 1400 ° C.,
Perform baking for 15 hours to obtain the desired phosphor.

The lanthanoid aluminate phosphor with Mn is an example of the phosphor used in the present invention.
The base material of the phosphor used in the present invention is not limited to this. Lanthanoid aluminate, which is a general term for the phosphor base material used in the present invention, is an aluminate of a lanthanoid element,
That is, it is an oxide compound of a lanthanoid element and aluminum. Lanthanoid elements known as so-called rare earth elements include La (lanthanum), Ce (cerium),
Pr (praseodymium), Nd (neodymium), Pm (promethium), Sm (samarium), Eu (europium), Gd (gadolinium), Tb (terbium), D
y (dysprosium), Ho (holmium), Er
(Erbium), Tm (thulium), Yb (ytterbium), and Lu (lutetium).

In the lanthanoid aluminate phosphor with Mn, the component ratio of green light to red light can be freely adjusted by adjusting the Mn concentration as shown in FIG. Also, as can be seen from the chromaticity diagram of FIG.
By adjusting the n density and moving the chromaticity coordinates, L
Free balance between blue light (light in the first emission band) from the ED chip 2 and green light (light in the second emission band) / red light (light in the third emission band) from the phosphor. Since the adjustment can be performed, the mixed color light emitted from the semiconductor light emitting device to the outside can be converted into various white light. Therefore, the semiconductor light emitting device of the present invention can be suitably used for a backlight of a transmission type color liquid crystal display device and the like. In order to obtain white light used for a backlight of a transmission type color liquid crystal display device, a phosphor La _1-x Al
₁₁ O _19: Mn, the concentration x of Mn ²⁺ _x, for example, 0.41 ≦ x
It is preferable to make adjustment so that ≦ 0.68.

The emission spectrum of the lanthanoid aluminate phosphor with Mn used in the present invention is different from the emission spectrum of the YAG phosphor with Ce used in the first prior art shown in FIG. 17, and is shown in FIG. It has a spectrum that extends to the deep red region as well. In addition, in the lanthanoid aluminate phosphor with Mn, the component ratio of green light to red light can be freely adjusted by adjusting the Mn concentration as shown in FIG. Therefore, a semiconductor light emitting device having the same color tone balance as an external light source such as sunlight can be obtained. Therefore, the semiconductor light emitting device of the present invention can be suitably used as an auxiliary light source of a reflection type color liquid crystal display device. To obtain a suitable color balance in the auxiliary light source of a reflective type color liquid crystal display device, the phosphor La _{1- x} Al ₁₁ O _19: Mn, the concentration x of Mn ²⁺ _x, for example, 0.42 ≦ x ≦ 0. It is preferable to adjust so as to be 69.

The emission spectrum of the semiconductor light emitting device of the present invention is different from the emission spectrum of the first prior art shown in FIG. 18 and is constituted by blue light, green light and red light as shown in FIG. Since these lights do not have a complementary color relationship with each other, the eyes do not become tired even when the output light of the semiconductor light emitting device is used for a task of using the eyes for a long time. Therefore, the semiconductor light emitting device of the present invention can be suitably used as a general illumination light source.

In the semiconductor light emitting device of the present invention, the emitted light has an emission spectrum composed of three emission bands of blue light, green light and red light, and the mixed color light has a very wide range on the chromaticity diagram. Occupy. FIG. 7 shows a chromaticity range in which the semiconductor light emitting device of the present invention can emit light. FIG.
It can be seen that the luminescent chromaticity range of the semiconductor light emitting device of the present invention is much wider than the luminescent chromaticity range of the first prior art shown in the chromaticity diagram of FIG. Therefore, the semiconductor light emitting device according to the first embodiment can be suitably used for applications requiring various color representations with rich color tones.

The semiconductor light emitting device of the present invention uses a blue LED chip 2 having an emission peak wavelength (first emission peak) of about 420 nm to 480 nm, unlike the second conventional technique using the ultraviolet light emitting element 2UV. That is, the phosphor is excited by blue light, which is visible light, and generates green light and red light having a longer wavelength than the blue light. That is, since no ultraviolet light is contained in the light emitting component, the coating member 19 and the sealing body 8 for sealing the light emitting element are not deteriorated by the ultraviolet light. Therefore, the semiconductor light emitting device according to the first embodiment can be suitably used for applications requiring high reliability. In addition, since no ultraviolet light is contained in the light emitting component, there is no possibility of damaging the eyeball or the like. Therefore, the semiconductor light emitting device according to the first embodiment can be safely used for applications such as general lighting.

Further, unlike the second prior art, the blue LE
Since one kind of phosphor is excited by the D chip 2, it is not necessary to mix three kinds of phosphors of blue, green and red very accurately. For this reason, it is inexpensive and excellent in mass production,
It can be easily used for various purposes. In particular, since only one kind of phosphor is used, color tone unevenness and color tone variation due to the blending and distribution of the phosphor are small, and the phosphor can be suitably used for applications requiring high display quality.

(Second Embodiment) In a semiconductor light emitting device according to a second embodiment of the present invention, as shown in FIG. 8, an LED chip 2 as a semiconductor light emitting element and light emitted from the LED chip 2 are emitted. And a phosphor that emits light in the second and third emission bands when excited by light in the first emission band. In the second embodiment, the phosphor is included in the phosphor-containing coating member 10. That is, the phosphor-containing coating member 10
Is mixed with Mn-attached lanthanoid-aluminate-based phosphor, which has light transmittance for light emitted from the LED chip 2.

Further, as shown in FIG. 8, the semiconductor light emitting device according to the second embodiment has a first wiring conductor (anode lead) 31 and a second wiring conductor (cathode lead) 32, One end of the wiring conductor 32 has a cup 1
6 are formed. The LED chip 2 includes a cup 16
Is adhered to the cup bottom portion 16a at the bottom of the base plate 1 via the phosphor-containing coating member 10. The thickness of the phosphor-containing coating member 10 applied to the cup bottom 16a is preferably, for example, about 10 μm to 100 μm. On the upper surface of the LED chip 2, an anode electrode 2b and a cathode electrode 2a are formed. The anode electrode 2b and the first wiring conductor 31 are electrically connected by a bonding wire 26. On the other hand, the cathode electrode 2a
The second wiring conductor 32 is electrically connected to the second wiring conductor 32 by a bonding wire 25.

Although illustration of the detailed structure is omitted, the LED chip 2 has a structure in which a buffer layer, an n-type clad layer, an active layer, and a p-type clad layer are sequentially deposited on a sapphire substrate. ing. Then, a part of the p-type cladding layer, the active layer and further the n-type cladding layer is removed by etching to form a concave part (notch part). A cathode electrode 2a is formed, and an anode electrode 2b is formed on the uppermost p-type clad layer. The cathode electrode 2a is
A two-layer structure in which a metal thin film having low-resistance ohmic contact with the n-type cladding layer, for example, titanium (Ti) and gold (Au) is laminated. On the other hand, the anode electrode 2b
Is a metal thin film having low ohmic contact with the p-type cladding layer, for example, nickel (Ni), gold (A
A two-layer structure in which u) is deposited is employed. As the metal thin film that makes low-resistance ohmic contact with the p-type cladding layer, a palladium (P)
d), a single layer of Ti, platinum (Pt), indium (In), or a laminated structure or alloy containing Ni or Au is also possible. A transparent electrode layer is formed as an anode electrode on the uppermost p-type cladding layer, and an anode electrode bonding pad portion such as a frame-shaped Ni / Au film or Al film is formed around the transparent electrode layer. It may be formed. Specifically, a metal oxygen film such as a tin (Sn) -added indium oxide film or a tin oxide (SnO ₂ ) film called ITO (indium tin oxide), or Au.
A metal such as a film can be formed sufficiently thin to about 5 nm and used as a transparent electrode. As the metal thin film that has low-resistance ohmic contact with the n-type cladding layer, in addition to Ti and Au,
A single layer of l or In, or a laminated structure or alloy containing Ti or Au is also possible. Although FIG. 8 schematically illustrates the anode electrode 2b and the cathode electrode 2a as if they exist at the same horizontal level, the cathode electrode 2a is actually formed on the bottom surface of the concave portion.

In the semiconductor light emitting device according to the second embodiment of the present invention, part of the blue light (light in the first emission band) emitted downward from the LED chip 2 is Wavelength conversion by the second and third
Light in the emission band. Light of the first emission band has a first peak emission P _B in the blue region. For example, the first
Wavelength of emission peak _{P B} in is in the blue region of 420 nm to 480 nm. Light of the second emission band has a second peak emission P _G that is separated from the first emission peak P _B in the green region, light of the third light-emitting band, the second emission peak in the red region a third emission peak _{P R} separated from P _G. That is, the phosphor-containing coating member 10 absorbs the blue light (light in the first emission band) emitted from the LED chip 2 and separates the green light (light in the second emission band) and the red light (light in the second emission band). A third emission band). The light of the first, second and third emission bands is reflected upward by the mirror-finished cup bottom 16a. Then, the remaining blue light (light of the first emission band) that has not been wavelength-converted is compared with the second and third blue lights.
Is mixed with the light of the emission band and emitted to the outside. In order to improve the reflectance at the cup bottom 16a,
It is preferable that the surface of the cup bottom 16a be subjected to a treatment such as Ni / Ag plating. As a result, the semiconductor light-emitting device according to the second embodiment, the emission peak P _B separated in the same manner as each other as in FIG. _4, P _G, an optical spectrum comprising a first to third emission band with a P _R It emits light. In addition,
Although not particularly shown, a cover in which a light scattering material such as silica powder is mixed may be formed in the cup so as to cover the LED chip 2 and the phosphor-containing coating member 10. Furthermore, the LED chip 2, the bonding wires 25 and 26, and the first and second wiring conductors 3 are formed by a light-transmitting sealing body.
You may make it cover the end part of 1,32. In this way, the blue light emitted from the LED chip 2 efficiently hits the phosphor-containing coating member 10 by the light scattering material in the coating, and the ratio of wavelength conversion by the phosphor-containing coating member 10 increases, and Since the light whose wavelength has been converted by the containing coating member 10 (the light of the second and third emission bands) and the remaining blue light (the light of the first emission band) that has not been wavelength-converted are uniformly mixed, Color tone unevenness in the direction of the directional angle of light emitted to the outside of the semiconductor light emitting device is prevented. The directivity angle can be determined by the radius of curvature of the top of the sealing body. When the directivity angle may be broad, a light scattering material may be mixed in the sealing body.

(Third Embodiment) As shown in FIG. 9, a semiconductor light emitting device according to a third embodiment of the present invention emits light from the LED chip 2 as a semiconductor light emitting element and the LED chip 2. And a phosphor that emits light in the second and third emission bands when excited by light in the first emission band. However, the phosphor is included in the phosphor-containing coating member 10. That is, the phosphor-containing coating member 10 is mixed with a Mn-attached lanthanoid-aluminate-based phosphor that is light-transmissive to light emitted from the LED chip 2.

Further, as shown in FIG. 9, the semiconductor light emitting device according to the third embodiment is constituted by using an insulating substrate 17, and one main surface of the insulating substrate 17 is provided with a cup portion 1.
6 are formed. From the cup bottom 16 a at the bottom of the cup 16 toward the other main surface of the insulating substrate 17,
First and second wiring conductors 3 extending outward in opposite directions to each other
4 and 33 are formed. The LED chip 2 is bonded to the surface of the end of the second wiring conductor 33 via the phosphor-containing coating member 10 at the cup bottom 16a. The phosphor-containing coating member 10 may be provided on the entire inner surface of the cup portion 16. An anode electrode 2b and a cathode electrode 2
a is formed. The anode electrode 2b and the first wiring conductor 34 are electrically connected by the bonding wire 26. On the other hand, the cathode electrode 2a and the second wiring conductor 33 are electrically connected by the bonding wire 25. Then, a sealing body 8 in which a light scattering material such as silica powder is mixed is disposed so as to surround the LED chip 2 and the phosphor-containing coating member 10. Instead of mixing the light-scattering material in the sealing body 8, a coating in which a light-scattering material is mixed may be used. That is, the inside of the cup portion 16 may be filled with a coating body mixed with a light scattering material so as to cover the coating member 10 and the LED chip 2.

In the semiconductor light emitting device according to the third embodiment of the present invention, part of the blue light (light in the first emission band) emitted downward from the LED chip 2 is Wavelength converted by the second and third
Light in the emission band. Light of the first emission band has a first peak emission P _B in the blue region. For example, the first
Wavelength of emission peak _{P B} in is in the blue region of 420 nm to 480 nm. Light of the second emission band has a second peak emission P _G that is separated from the first emission peak P _B in the green region, light of the third light-emitting band, the second emission peak in the red region a third emission peak _{P R} separated from P _G. Then, the light of the first, second and third emission bands is respectively reflected upward by the surface of the end portion of the second wiring conductor 33 finished to the mirror surface, and LE is again emitted.
The light passes through the inside of the D chip 2. For this reason, the remaining blue light (light of the first emission band) that has not been wavelength-converted and light of the first, second, and third emission bands are mixed and emitted to the outside. In order to improve the reflectance on the surface of the end of the second wiring conductor 33, the surface of the end of the second wiring conductor 33 should be subjected to a treatment such as Ni / Au plating or Ni / Ag plating. Is preferred. As a result, the third
The semiconductor light emitting device according to the embodiment, first have a peak P _B, P _G, P _R separated in the same manner as each other as FIG 1
To emit light having a spectrum consisting of the third emission band.

The semiconductor light emitting device according to the third embodiment of the present invention is obtained by changing the semiconductor light emitting device according to the second embodiment of the present invention to a form of a semiconductor light emitting device for surface mounting. The other structure, the operating principle of light emission, and the like are the same as those of the semiconductor light emitting device according to the second embodiment of the present invention, and duplicate description will be omitted.

(Fourth Embodiment) A semiconductor light emitting device according to a fourth embodiment of the present invention has a structure as shown in FIG.
An LED chip 2 serving as a semiconductor light emitting element, and a phosphor that emits light of a second and third emission band when excited by light of a first emission band emitted from the LED chip 2. I have. However, the phosphor is included in the plate-shaped phosphor chip 12. That is, the plate-shaped phosphor chip 12 is mixed with a Mn-attached lanthanoid-aluminate-based phosphor that is light-transmissive to light emitted from the LED chip 2. Plate-shaped phosphor chip 1
2 is formed by mixing and solidifying a single crystal, a polycrystal, a sintered body, or a powder of a phosphor of a lanthanoid / aluminate-based phosphor with Mn on a coating member such as a resin, a low melting point glass, and a ceramic coating agent. And the like. The thickness of the phosphor chip 12 is, for example, 10 μm to 10 μm.
It is preferably about 0 μm.

Further, as shown in FIG. 10, the semiconductor light emitting device according to the fourth embodiment has a first wiring conductor (anode lead) 31 and a second wiring conductor (cathode lead) 32.
And a cup portion 16 is formed at one end of the second wiring conductor 32. The plate-shaped phosphor chip 12 is adhered to a cup bottom 16 a at the bottom of the cup 16 via a light-transmissive or light-reflective first adhesive 13. The LED chip 2 is bonded to the upper part of the plate-shaped phosphor chip 12 via a light-transmitting second adhesive 15.
On the upper surface of the LED chip 2, an anode electrode and a cathode electrode (not shown) are formed. The anode electrode and the first wiring conductor 31 are electrically connected by a bonding wire 26, and the cathode electrode and the second wiring conductor 32 are electrically connected by a bonding wire 25. Also,
An LED chip 2, bonding wires 25 and 26, and a light-transmitting sealing body 8 formed in a shell shape so as to cover the ends of the first and second wiring conductors 31 and 32 are provided.

The semiconductor device according to the fourth embodiment of the present invention
In the optical device, the blue light emitted downward from the LED chip 2
Part of the light (light in the first emission band) is a plate-like phosphor chip.
The second and third light emitting vans are
It becomes the light of de. These first, second and third light emitting vans
The light of the cup is the mirror-finished cup bottom 1
6a is reflected upward at the surface of the LED chip again
2 inside. Then, the wavelength-converted light (second
And light of the third emission band) and the residue that has not been wavelength-converted.
Blue light (light in the first emission band)
Released outside. Mirror-finished cup bottom 16
On the surface of a, the remaining blue color not converted
The light (light in the first emission band) is also reflected,
The wavelength-converted light transmitted through the inside of the
3) and emitted to the outside.
The light of the first emission band has a first emission peak in the blue region.
P _BHaving. For example, the first emission peak P_BWavelength of
Is in the blue region from 420 nm to 480 nm. Second
The light in the emission band has a first emission peak in the green region.
P_BEmission peak P separated from_GAnd the third
The light in the emission band has a second emission peak in the red region.
P_GEmission peak P separated from_RHaving. this
With such a configuration, the semiconductor light emitting device according to the fourth embodiment
The emission peaks P separated from each other as in FIG._B, P
_G, P_RConsisting of first to third emission bands having
It emits the light of a cuttle.

In the semiconductor light emitting device according to the fourth embodiment of the present invention, the light scattering material made of
The D chip 2 and the phosphor chip 12 may be mixed with a cover formed in the cup portion so as to cover the D chip 2 and the phosphor chip 12. In this case, the blue light (first light) emitted from the LED chip 2
Of the light-emitting band of the plate-shaped phosphor chip 12 efficiently.
Hit. For this reason, the ratio of wavelength conversion by the phosphor chip 12 increases, and the light (second and third light) wavelength-converted by the phosphor chip 12 inside the coating.
And the remaining blue light (light of the first emission band) that has not been wavelength-converted are evenly mixed.
For this reason, color tone unevenness in the direction of the directional angle of light emitted to the outside of the semiconductor light emitting device is prevented.

(Fifth Embodiment) A semiconductor light emitting device according to a fifth embodiment of the present invention, as shown in FIG.
An LED chip 2 serving as a semiconductor light emitting element, and a phosphor that emits light of a second and third emission band when excited by light of a first emission band emitted from the LED chip 2. I have. However, the phosphor is included in the plate-like phosphor chip 12 as in the fourth embodiment. The plate-shaped phosphor chip 12 is mixed with a Mn-containing lanthanoid-aluminate-based phosphor that is light-transmissive to light emitted from the LED chip 2. The plate-shaped phosphor chip 12 is formed by coating a single crystal, polycrystal, sintered body, or powder of a phosphor of Mn-attached lanthanoid-aluminate phosphor onto a coating member such as a resin, a low-melting glass, and a ceramic coating agent. It is a composite solidified body formed by mixing and solidifying.

Further, as shown in FIG. 11, the semiconductor light emitting device according to the fifth embodiment is configured by using an insulating substrate 17, and a cup portion 16 is provided on one main surface of the insulating substrate 17. Is formed. First and second wiring conductors 34 and 33 extending outward from the cup bottom 16a at the bottom of the cup 16 toward the other main surface of the insulating substrate 17 in opposite directions are formed. The plate-shaped phosphor chip 12 is bonded to the surface of the end of the second wiring conductor 33 at the cup bottom 16 a at the bottom of the cup 16 via a light-transmissive or light-reflective first adhesive 13. I have. The LED chip 2 is bonded to the upper part of the plate-shaped phosphor chip 12 via a light-transmitting second adhesive 15.
An anode electrode and a cathode electrode are formed on the upper surface of the LED chip 2. The anode electrode and the first wiring conductor 34 are connected with the bonding wire 26, and the cathode electrode and the second wiring conductor 33 are connected with the bonding wire 25.
Are electrically connected to each other. And the first and second
A part of the wiring conductors 34, 33, the bonding wires 25,
A sealing body 8 containing a light scattering material such as a silica powder is arranged so as to surround the LED chip 2, the second adhesive 15, the phosphor chip 12, the first adhesive 13, and the like.

The light of the first emission band of the semiconductor light emitting device according to the fifth embodiment has a first emission peak P _B in the blue region. The wavelength of the first emission peak _{P B} is 420
nm to 480 nm. Light of the second emission band has a second peak emission P _G that is separated from the first emission peak P _B in the green region, light of the third light-emitting band, the second emission peak in the red region a third emission peak _{P R} separated from P _G. That is, in the semiconductor light emitting device according to the fourth embodiment of the present invention, part of the blue light (light in the first emission band) emitted downward from the LED chip 2 is emitted by the plate-shaped phosphor chip 12. The wavelength is converted to light of the second and third emission bands. The light of the first, second and third emission bands is reflected upward at the surface of the end portion of the second wiring conductor 33 finished to a mirror surface, and transmits through the inside of the LED chip 2 again. And
The wavelength-converted light (light in the second and third emission bands) and the remaining blue light (light in the first emission band) not subjected to wavelength conversion are mixed and emitted to the outside. In other words, the remaining blue light (light of the first emission band) that has not been wavelength-converted is also reflected on the mirror-finished end surface of the second wiring conductor 33 and transmitted through the LED chip 2 again. Then, the light is mixed with the wavelength-converted light (light in the second and third emission bands) and emitted to the outside. As a result, the semiconductor light emitting device according to the fifth embodiment has first to first emission peaks P _B , P _G , and P _R that are separated from each other as in FIG.
Light of a spectrum consisting of the third emission band is emitted.

A semiconductor light emitting device according to a fifth embodiment of the present invention is obtained by changing the semiconductor light emitting device according to the fourth embodiment of the present invention to a semiconductor light emitting device for surface mounting. The other structure, operation principle of light emission, and the like are the same as those of the semiconductor light emitting device according to the fourth embodiment of the present invention. The same thing as the semiconductor light emitting device according to the fourth embodiment of the present invention can be used for the plate-shaped phosphor chip 12.

The semiconductor light emitting device according to the fifth embodiment of the present invention can be made smaller than the semiconductor light emitting device according to the fourth embodiment. Alternatively, the light scattering material may be directly mixed into the sealing body 8 without selectively mixing the light scattering material into the coating material filled in the cup portion.

(Sixth Embodiment) A semiconductor light emitting device according to a sixth embodiment of the present invention, as shown in FIG.
An LED chip 2 serving as a semiconductor light emitting element, and a phosphor that emits light of a second and third emission band when excited by light of a first emission band emitted from the LED chip 2. I have. However, the phosphor is included in the phosphor chip 12 formed in a plate shape or a block shape. That is, the phosphor chip 12 is made of a single crystal, polycrystal, sintered body, or phosphor of a Mn-attached lanthanoid-aluminate-based phosphor having a light transmitting property with respect to light emitted from the LED chip 2. Powder, resin, low melting point glass,
It is a composite solidified body formed by mixing and solidifying on a coating member such as a ceramic coating agent. The thickness of the phosphor chip 12 is preferably, for example, about 10 μm to 100 μm. As shown in FIG. 12, the plane dimensions of the phosphor chip 12 are set to be equal to or larger than the plane dimensions of the LED chip 2.

The semiconductor light emitting device according to the sixth embodiment is configured using an insulating substrate 18. A first extending from the center of one main surface of the insulating substrate to the other main surface of the insulating substrate and extending outward in opposite directions;
And the second wiring conductors 34 and 33 are formed.

The semiconductor light-emitting device according to the sixth embodiment shown in FIG. 12 has a so-called “flip-chip structure”, and is provided on one main surface of an insulating substrate 18 in opposite directions along this main surface. First and second wiring conductors 3 extending outward
4 and 33 are formed. On the surface of one end of each of the second and first wiring conductors 33 and 34, a cathode bump 3a and an anode bump 3b are formed.
As the cathode bump 3a and the anode bump 3b, a solder ball, a gold (Au) bump, a silver (Ag) bump, a copper (Cu) bump, a nickel / gold (Ni-Au) bump,
Or nickel / gold / indium (Ni-Au-In)
Soft metals such as bumps can be used. Eutectic solder of tin (Sn): lead (Pb) = 6: 4 having a diameter of 50 μm to 100 μm and a height of 25 μm to 100 μm can be used as the solder ball. Alternatively, Sn: Pb = 5: 95
May be used. A second electrode (cathode electrode) 2a and a first electrode (anode electrode) 2b formed on the surface of the LED chip 2 are respectively connected to a second and a first wiring via the cathode bump 3a and the anode bump 3b. Conductor 3
3 and 34 are electrically connected to one end by heat bonding, ultrasonic bonding, bonding with a conductive adhesive, or the like. The phosphor chip 12 is bonded to the back surface of the LED chip 2 via a light-transmitting adhesive 4. Then, a sealing body 8 in which a light scattering material such as silica powder is mixed is disposed so as to surround the LED chip 2 and the phosphor chip 12 and the like.

In the semiconductor light emitting device according to the sixth embodiment of the present invention, part of the blue light (light of the first emission band) emitted upward from the back surface of the LED chip 2 is plate-shaped or block-shaped. The wavelength of the light is converted by the phosphor chip 12 into a second and a third emission band. Light of the first emission band has a first peak emission P _B in the blue region. For example, the wavelength of the first emission peak P _B is 420 n
It only has to be in the blue region of m to 480 nm. Light of the second emission band has a second peak emission P _G that is separated from the first emission peak P _B in the green region, light of the third light-emitting band, the second emission peak in the red region a third emission peak _{P R} separated from P _G. The light of the second and third emission bands is emitted upward, and is mixed with the remaining blue light (light of the first emission band) that has not been subjected to wavelength conversion in the sealing body 8 to be sealed. Released to the outside.
In addition, a part of the blue light (light of the first emission band) emitted downward from the surface of the LED chip 2 is generated on the surfaces of the end portions of the first and second wiring conductors 34 and 33 finished into mirror surfaces. The reflected light is also reflected upward, and the wavelength of the reflected light is also converted by the phosphor chip 12 to become light of the second and third emission bands.
The light of the second and third emission bands is also emitted further upward, and is mixed with the remaining reflected light (light of the first emission band) that has not been wavelength-converted and sealed inside the sealing body 8. Released outside the body 8. As a result, the semiconductor light-emitting device according to the sixth embodiment, the emission peak P _B separated in the same manner as each other as in FIG. _4, P _G, an optical spectrum comprising a first to third emission band with a P _R It emits light.

Since the semiconductor light emitting device according to the sixth embodiment of the present invention has the sealing body 8 surrounding the LED chip 2 and the phosphor chip 12, the blue light emitted from the LED chip 2 The light whose wavelength has been converted by the phosphor chip 12 and the remaining blue light whose wavelength has not been converted are mixed evenly. For this reason, color tone unevenness in the direction of the directional angle of light emitted to the outside of the semiconductor light emitting device is prevented.

The LED chip 2 and the plate-shaped or block-shaped phosphor chip 12 are bonded in advance to form an assembly. It may be electrically connected to one end.

(Seventh Embodiment) A semiconductor light emitting device according to a seventh embodiment of the present invention has a structure as shown in FIG.
The LED chip 2 as a semiconductor light emitting element, a shell-shaped sealing body 8 covering the LED chip 2, and the second and the second light emitting bands are excited by light of the first emission band emitted from the LED chip 2. And a phosphor that emits light of three emission bands. However, the phosphor is included in the phosphor cover 6 formed by covering the shell type sealing body 8. For the phosphor cover 6, a material in which a relatively soft translucent member such as a silicone resin or a thermoplastic polyamide resin is mixed with a lanthanoid-aluminate-based phosphor with Mn is used. The phosphor cover 6 is molded in advance in accordance with the outer shape of the shell-shaped sealing body 8 and is attached to the sealing body 8 or directly attached to the sealing body 8 by a method such as coating. Formed.

Further, as shown in FIG. 13, the semiconductor light emitting device according to the seventh embodiment has a first wiring conductor 35 and a second wiring conductor 36, and one end of the first wiring conductor 35. Is formed with a cup portion 16. LED chip 2
Is formed by epitaxial growth on a conductive SiC substrate, and the SiC substrate functions as a cathode region.
On the lower surface of the cathode region below the LED chip 2,
A cathode electrode, not shown, is formed on the entire surface or a part thereof. On the lower surface of the cathode region, a metal thin film such as a two-layer structure in which Ti / Au is laminated or a single layer of Al or In can be used as a cathode electrode. Then, the cathode electrode is connected to a cup bottom 16 a at the bottom of the cup 16.
Are bonded by a conductive adhesive or solder (not shown). On the other hand, an anode electrode (not shown) is formed on the upper surface of the LED chip 2. As the anode electrode, a laminated structure of Ni / Au, Pd, Ti, P
It is also possible to use a single layer of t or In, a laminated structure including Ni / Au, or an alloy. The anode electrode and the second wiring conductor 36 are electrically connected by the bonding wire 24. The sealing body 8 includes the first and second wiring conductors 3.
5, 36, the bonding wire 24, the LED chip 2 and the like are formed.

That is, the half according to the seventh embodiment of the present invention.
In the conductor light emitting device, the light emitted from the LED chip 2
Part of the blue light (light in the first emission band)
Lanthanoid-aluminate-based fluorescent lamp with Mn in cover 6
The light is excited and separated from each other by green light (second light emitting bar).
Light) and red light (light in the third emission band)
And the remaining blue light that did not excite the phosphor (first emission)
Light of the light band) and light of the second and third emission bands.
The color light is emitted to the outside of the phosphor cover 6. First departure
The light of the light band has a first emission peak P in the blue region._BWith
I do. For example, the first emission peak P_BHas a wavelength of 420
nm to 480 nm. Second emission band
Is the first emission peak P in the green region._BMinutes from
Separated second emission peak P_GAnd a third emission band
Is the second emission peak P in the red region._GMinutes from
Third emission peak P separated_RHaving. As a result, the seventh
The semiconductor light emitting device according to this embodiment has the same structure as that of FIG.
Light emission peak P _B, P_G, P_RThe first with
Light of the spectrum consisting of the third emission band
Light is emitted outside the cover 6.

Note that, similarly to the first to sixth embodiments of the present invention, a structure in which both an anode electrode and a cathode electrode are formed on the upper surface of the LED chip 2 using an insulating sapphire substrate. The good thing is, of course. In this case, the anode and cathode electrodes are respectively associated with the first 1 /
The second wiring conductors 35 and 36 are electrically connected by bonding wires.

(Other Embodiments) As described above, the present invention has been described with reference to the first to seventh embodiments.
The discussion and drawings that form part of this disclosure should not be understood as limiting the invention. From this disclosure, various alternative embodiments, examples, and operation techniques will be apparent to those skilled in the art.

For example, by using not only La but also an aluminate of a single lanthanoid element or an aluminate of a plurality of elements as the phosphor base material of the present invention, the excitation wavelength of the phosphor and the green and red colors can be obtained. The emission wavelength can be variously adjusted, and the color specification range and the like of the semiconductor light emitting device can be variously changed. Further, in order to improve the temperature characteristics and the luminous efficiency of the phosphor of the present invention, it is also possible to add a binding agent other than Mn.

Further, in the first embodiment of the present invention, similarly to the seventh embodiment, an LED chip is formed using a conductive substrate such as SiC, and the entire lower surface of the conductive substrate or one of the LED chips is formed. It is a matter of course that an electrode may be formed in the portion and the electrode may be bonded to the bottom of the cup with a conductive adhesive or solder.

Further, in the second to fifth embodiments and the seventh embodiment of the present invention, it is possible to adopt a structure in which no cup portion is provided as in the sixth embodiment.

The semiconductor light emitting device of the present invention comprises a combination of a semiconductor light emitting element and one kind of phosphor excited by blue light output from the semiconductor light emitting element. The emission spectrum of the phosphor has two emission bands having emission peaks separated from each other in a green region and a red region, and the spectrum of the mixed color light extracted to the outside has a spectrum of blue light, green light and red light. The basic technical idea is to have three emission bands having emission peaks separated from each other. Therefore, within the scope of this technical idea, the structure is not limited to the structure exemplified in the description of the first to seventh embodiments described above, but may be another LE.
It can be easily understood that a specific structure for combining the D chip and one kind of phosphor is acceptable. In other words, by adopting the most suitable embodiment according to the purpose and application, it is possible to regret the many excellent features of the semiconductor light emitting device of the present invention.

As described above, the present invention naturally includes various embodiments and the like not described herein. Therefore, the technical scope of the present invention is determined only by the matters specifying the invention according to the claims that are appropriate from the above description.

[0093]

According to the present invention, the three-wavelength cold-cathode fluorescent tube has the same emission spectrum of three primary colors of blue light, green light, and red light having emission peaks separated from each other, and
A semiconductor light emitting device whose spectrum matches well with the transmission spectrum of a color filter of a transmission type color liquid crystal display device can be provided.

Further, according to the present invention, the component ratio between the green light and the red light of the phosphor can be freely adjusted, and the component ratio between the blue light of the LED chip and the light emission of the phosphor can also be freely adjusted. In addition, a semiconductor light emitting device capable of obtaining the same color tone balance of a display image as that of external light can be provided.

Further, according to the present invention, it is possible to provide a semiconductor light emitting device which does not tire the eyes even when used for a task in which the eyes are used for a long time and which can be suitably used as a general illumination light source.

Further, according to the present invention, it is possible to provide a semiconductor light emitting device capable of producing light of various colors.

Further, according to the present invention, it is possible to provide a highly reliable semiconductor light emitting device with little deterioration of a coating member, a sealing body and the like.

Further, according to the present invention, it is possible to provide a semiconductor light emitting device which has a simple structure, is inexpensive and has excellent mass productivity.

Further, according to the present invention, it is possible to provide a semiconductor light emitting device which is easy to manufacture and has less color tone unevenness and color variation.

Further, according to the present invention, it is possible to provide a semiconductor light emitting device capable of obtaining safe and bright light without leakage of ultraviolet rays.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a semiconductor light emitting device according to a first embodiment of the present invention.

FIG. 2 is an excitation spectrum of a La aluminate phosphor with Mn.

FIG. 3 is an emission spectrum of a La aluminate phosphor with Mn.

FIG. 4 is an emission spectrum of the semiconductor light emitting device according to the first embodiment of the present invention.

FIG. 5 is a graph showing the relationship between the amount of Mn added and the emission color of a La aluminate-based phosphor with Mn.

FIG. 6 is a chromaticity diagram illustrating a color mixing mechanism of a semiconductor light emitting device using a La aluminate phosphor with Mn.

FIG. 7 is a chromaticity diagram showing a chromaticity range in which a semiconductor light emitting device using a La aluminate phosphor with Mn can emit light.

FIG. 8 is a schematic sectional view of a semiconductor light emitting device according to a second embodiment of the present invention.

FIG. 9 is a schematic sectional view of a semiconductor light emitting device according to a third embodiment of the present invention.

FIG. 10 is a schematic sectional view of a semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 11 is a schematic sectional view of a semiconductor light emitting device according to a fifth embodiment of the present invention.

FIG. 12 is a schematic sectional view of a semiconductor light emitting device according to a sixth embodiment of the present invention.

FIG. 13 is a schematic sectional view of a semiconductor light emitting device according to a seventh embodiment of the present invention.

FIG. 14 is a schematic cross-sectional view of a semiconductor light emitting device according to a first related art.

FIG. 15 is a schematic cross-sectional view of a semiconductor light emitting device according to a second conventional technique.

FIG. 16 is an excitation spectrum of a Ce-attached YAG phosphor.

FIG. 17 is an emission spectrum of a Ce-attached YAG phosphor.

FIG. 18 is an emission spectrum of the semiconductor light emitting device according to the first related art.

FIG. 19 is an example of an emission spectrum of a three-wavelength cold cathode fluorescent tube.

FIG. 20 is an example of a transmission spectrum of a color filter of a transmission type color liquid crystal display device.

FIG. 21 is a chromaticity diagram for explaining a color mixing mechanism of the semiconductor light emitting device according to the first related art.

FIG. 22 is a chromaticity diagram showing a chromaticity range in which the semiconductor light emitting device according to the first conventional technique can emit light.

[Explanation of symbols]

 2 LED chip 2a Cathode electrode 2b Anode electrode 3a Cathode bump 3b Anode bump 6 Phosphor cover 8 Sealing body 10, 11 Phosphor-containing coating member 12 Phosphor chip 13 First adhesive 14 Adhesive 15 Second adhesive 16 cup Part 16a Cup bottom part 17, 18 Insulating substrate 19 Coating member 20 Fluorescent coating member 24, 25, 26 Bonding wire 31, 34, 35 First wiring conductor 32, 33, 36 Second wiring conductor

Claims (15)

[Claims] 1. A semiconductor light emitting device that emits light in a first emission band having a first emission peak in a blue region, and the first light emission device in a green region is excited by light in the first emission band. Second separated from the emission peak of
A phosphor that emits light of a third emission band having a third emission peak separated from the second emission peak in a red region in a second emission band having an emission peak of: A semiconductor light emitting device that emits light having a spectrum including first to third emission bands. 2. The semiconductor light emitting device according to claim 1, wherein said phosphor is a lanthanoid aluminate phosphor added with manganese. 3. The phosphor according to claim 1, wherein the phosphor has a chemical formula of LaAl.₁₁O₁₈:
Mn²⁺Or La _TwoO_Three・ 11Al_TwoO_Three: Mn²⁺In table
3. A semiconductor light emitting device according to claim 1, wherein
Light device. 4. The phosphor has a chemical formula La_1-xAl
_{11 (2/3) + x}O₁₉: Mn²⁺ _x(However, 0.1 ≦ x ≦ 0.9
3. The method according to claim 1, wherein
Semiconductor light emitting device. 5. The phosphor according to claim 1, wherein the phosphor has a chemical formula (La, Ce) A.
2. The composition according to claim 1, wherein the ^compound is represented by l ₁₁ O ₁₉ : Mn ^2+.
Or the semiconductor light emitting device according to 2. 6. The phosphor according to claim 1, wherein the phosphor has a chemical formula of (La, Ce) Mg.
The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device is represented by Al ₁₁ O ₁₉ : Mn ²⁺ . 7. The wavelength of the first emission peak is 420
7 to 480 nm.
The semiconductor light emitting device according to claim 1. 8. The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element has a gallium nitride (GaN) -based compound semiconductor layer as a light emitting layer. 9. The method according to claim 1, wherein the phosphor is contained in a coating member.
13. The semiconductor light emitting device according to claim 1. 10. The semiconductor light emitting device according to claim 9, wherein the coating member covers the periphery of the semiconductor light emitting element. 11. The semiconductor light emitting device according to claim 9, wherein said coating member is in contact with only one main surface of said semiconductor light emitting element. 12. The coating member may be an epoxy resin, a urea resin, a silicone resin, a polyester resin,
The semiconductor light emitting device according to any one of claims 9 to 11, wherein the organic light emitting device is an organic resin having a light transmittance selected from a group consisting of an acrylic resin and a polyimide resin. 13. The coating member comprises a metalloxane bond (MOM bond, M: metal) obtained by solidifying a liquid ceramic coating agent as a metal alkoxide, an ultrafine metal oxide or a polysilazane starting material. The semiconductor light emitting device according to any one of claims 9 to 11, wherein the device is made of a polymetalloxane gel as a main component. 14. The coating member according to claim 9, wherein the coating member is made of a composite polymer in which a functional group of a metal alkoxide is partially modified to introduce an organic resin monomer.
12. The semiconductor light emitting device according to any one of items 11 to 11. 15. The phosphor forms a plate-shaped phosphor chip, and the phosphor chip faces one main surface of the semiconductor light emitting element via an optically transparent adhesive. The semiconductor light emitting device according to claim 1, wherein: