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TWI398935B - Wafer carrier board and package structure and method thereof - Google Patents

Wafer carrier board and package structure and method thereof Download PDF

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Publication number
TWI398935B
TWI398935B TW098135051A TW98135051A TWI398935B TW I398935 B TWI398935 B TW I398935B TW 098135051 A TW098135051 A TW 098135051A TW 98135051 A TW98135051 A TW 98135051A TW I398935 B TWI398935 B TW I398935B
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Taiwan
Prior art keywords
wafer
wafer carrier
contact structure
layer
package
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TW098135051A
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Chinese (zh)
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TW201115693A (en
Inventor
張榮騫
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相互股份有限公司
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Priority to TW098135051A priority Critical patent/TWI398935B/en
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Publication of TWI398935B publication Critical patent/TWI398935B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

晶片載板及其封裝結構與方法Wafer carrier board and package structure and method thereof

本發明係關於晶片載板及其封裝結構,特別是關於具有防止封裝膠液污染接觸插座之晶片載板及其封裝結構。The present invention relates to a wafer carrier and its package structure, and more particularly to a wafer carrier having a contact plug that prevents contamination of the package glue and a package structure thereof.

參考圖1,習知之晶片封裝結構100包含晶片載板110、晶片120、及封裝絕緣體130。晶片載板110具有側向接觸插槽112及連接墊114。形成封裝結構100的方法包含將晶片120黏裝於晶片載板110上方;藉由打線使晶片120連接連接墊114而能與側向接觸插槽112電連接;然後再將晶片載板110置入預先準備好的模具中,注入適當量的樹脂膠液使其覆蓋晶片120;最後再使樹脂膠液固化並去模以形成封裝絕緣體130。封裝結構100完成後可沿如圖1所示之虛線進行切割,即可獲得個別的封裝晶粒。每顆封裝晶粒具有側向接觸插槽112便於插設在電子產品的電路板上。Referring to FIG. 1, a conventional wafer package structure 100 includes a wafer carrier 110, a wafer 120, and a package insulator 130. The wafer carrier 110 has lateral contact slots 112 and connection pads 114. The method of forming the package structure 100 includes bonding the wafer 120 over the wafer carrier 110; the wafer 120 is connected to the connection pad 114 by wire bonding to be electrically connected to the lateral contact slot 112; and then the wafer carrier 110 is placed. In the pre-prepared mold, an appropriate amount of resin glue is injected to cover the wafer 120; finally, the resin glue is solidified and demolded to form the package insulator 130. After the package structure 100 is completed, it can be cut along the broken line as shown in FIG. 1 to obtain individual package crystal grains. Each package die has a lateral contact slot 112 for easy insertion on a circuit board of an electronic product.

習知之晶片封裝結構100於製程中有易被封裝絕緣體所用之樹脂膠液污染的缺點。詳言之,如於上所述之封裝結構100形成步驟中,當注入適當量的樹脂膠液覆蓋晶片120時,樹脂膠液會滲入側向接觸插槽112,而使最後完成的封裝晶粒產生接觸不良的問題。習知解決此問題的方法係於進行封裝時,於樹脂膠液注入之前先塗佈一層保護膜蓋住接觸插槽112露出的表面。然而,這種解決方法將增加封裝製程的複雜度,因此期待有更新穎創新的方式,尤其是便於封裝製程的方式來解決習知的問題。The conventional chip package structure 100 has the disadvantage of being easily contaminated by the resin glue used for packaging the insulator in the process. In detail, as in the forming step of the package structure 100 described above, when an appropriate amount of resin glue is applied to cover the wafer 120, the resin glue penetrates into the lateral contact slot 112, so that the final packaged die is completed. A problem of poor contact. The conventional method for solving this problem is to apply a protective film to cover the exposed surface of the contact slot 112 before the resin glue is injected. However, this solution will increase the complexity of the packaging process, so it is expected to be innovative and innovative, especially to facilitate the packaging process to solve the conventional problems.

有鑑於上述之問題,本發明係提供一種可防止樹脂膠液污染已形成之接觸線路的結構及其製造方法。In view of the above problems, the present invention provides a structure which can prevent a resin glue from contaminating a contact line which has been formed, and a method of manufacturing the same.

在一方面,本發明係提供一種晶片載板,包含:一晶片承載部,垂直設有一第一接觸結構、一第二接觸結構;一支架部,橫向地環繞該晶片承載部;一間隔,隔開該晶片承載部與該支架部;及一遮蔽層橫向延伸橫跨該間隔而連結該晶片承載部與該支架部。也提供此晶片載板之形成方法。In one aspect, the present invention provides a wafer carrier comprising: a wafer carrying portion vertically disposed with a first contact structure and a second contact structure; and a bracket portion laterally surrounding the wafer carrying portion; Opening the wafer carrying portion and the bracket portion; and a shielding layer extending laterally across the space to connect the wafer carrying portion and the bracket portion. A method of forming the wafer carrier is also provided.

在另一方面,本發明係提供一種封裝結構,包含如前述之晶片載板;一晶片設置於該第一接觸結構上;及一封裝絕緣體覆蓋該晶片。也提供此封裝結構之形成方法。In another aspect, the invention provides a package structure comprising a wafer carrier as described above; a wafer disposed on the first contact structure; and a package insulator covering the wafer. A method of forming this package structure is also provided.

本發明尚包含其他方面並合併上述之各方面詳細揭露於以下實施方式中。The present invention is intended to cover other aspects and the various aspects described above are disclosed in detail in the following embodiments.

以下將參考所附圖式示範本發明之較佳實施例。所附圖式中相似元件係採用相同的元件符號。應注意為清楚呈現本發明,所附圖式中之各元件並非按照實物之比例繪製,而且為避免模糊本發明之內容,以下說明亦省略習知之零組件、相關材料、及其相關處理技術。Preferred embodiments of the present invention will be exemplified below with reference to the accompanying drawings. Like components in the drawings have the same component symbols. It should be noted that the various elements of the present invention are not drawn to the true aspect of the present invention, and in order to avoid obscuring the present invention, the following description also omits the known components, related materials, and related processing techniques.

圖2A至2D及圖3至圖5為依據本發明之一實施例例示一晶片載板之製作過程的剖面示意圖與上視示意圖。2A to 2D and 3 to 5 are schematic cross-sectional views and a top view showing a process of fabricating a wafer carrier according to an embodiment of the invention.

首先,參考圖2A,形成晶片載板700(見於圖5)係先提供一多層線路板200、一上層黏結膠片300、一下層黏結膠片400、一上層遮蔽基板500及一下層保護基板600。圖2B顯示圖2A之多層線路板200的上視圖。圖2C顯示圖2A之上層黏結膠片300的上視圖。圖2D顯示圖2A之下層黏結膠片400的上視圖。First, referring to FIG. 2A, a wafer carrier 700 (see FIG. 5) is first provided with a multilayer wiring board 200, an upper bonding film 300, a lower bonding film 400, an upper shielding substrate 500, and a lower protective substrate 600. 2B shows a top view of the multilayer wiring board 200 of FIG. 2A. Figure 2C shows a top view of the top bonded film 300 of Figure 2A. Figure 2D shows a top view of the underlying bonded film 400 of Figure 2A.

本文所指之多層線路板包含至少兩層導線線路。如圖2A所示,從Y方向觀之,多層線路板200係包含四層導線線路201至204,其間夾有絕緣層205至207。最上層導線線路201及最下層導線線路204可選擇性地覆有導線覆蓋層208及209。導線覆蓋層209下方可選擇性覆蓋一防焊層210。從X方向觀之,多層線路板200可包含支架部220、晶片承載部240、及外緣部230。支架部220對內橫向地環繞晶片承載部240;對外則連接外緣部230。外緣部230通常為廢料邊。支架部220及晶片承載部240之間設有婁空的間隔250。晶片承載部240包含暴露於間隔250的側壁接觸插座241;以及設於其中的導電貫穿孔242。側壁接觸插座241係以如城堡狀地環繞晶片承載部240的週圍。側壁接觸插座241用來插設在一電子產品的電路板上。製作多層線路板200可以習知之印刷電路板技術,故所使用之導電及絕緣材料均可參照習知之各種合適材料。舉例而言,導電材可用銅鋁鎳等,絕緣材可用環氧樹脂玻纖(FR4)基板等;防焊層可用一般常用的高分子基底防焊綠漆。製作導線線路201至204、圖案化防焊層等可用光阻蝕刻之顯影製程;製作間隔250、側壁接觸插座241及導電貫穿孔242可用一般之鑽孔或雷射鑽孔及穿孔鍍銅等技術,也可使用蝕刻技術。圖2B為圖2A所示之多層線路板200的上視圖。圖2A中所示之多層線路板200即為沿圖2B之虛線B-B’的剖面圖。從圖2B可清楚看出支架部220呈網狀結構環繞晶片承載部240,間隔250介於支架部220與晶片承載部240之間。外緣部230位於多層線路板200之最外圍周邊。尤其應注意多層線路板200具有複數個晶片承載部240,可用來承接複數個晶片。在另一實施例,多層線路板200也可只具有一個晶片承載部240。晶片承載部240之對角線位置設有連接部260,用來與支架部220相連。圖2B顯示多層線路板200之上表面佈滿導線覆蓋層208。然於另一實施例,導線覆蓋層208在晶片承載部240也可具有圖案化的結構,而使下層的絕緣層205露出。The multilayer circuit board referred to herein includes at least two layers of wire lines. As shown in FIG. 2A, viewed from the Y direction, the multilayer wiring board 200 includes four wiring lines 201 to 204 with insulating layers 205 to 207 interposed therebetween. The uppermost wire line 201 and the lowermost wire line 204 are selectively covered with wire covering layers 208 and 209. A solder mask layer 210 may be selectively covered under the wire cover layer 209. Viewed from the X direction, the multilayer wiring board 200 may include a bracket portion 220, a wafer carrying portion 240, and an outer edge portion 230. The bracket portion 220 surrounds the wafer carrying portion 240 laterally inwardly; the outer edge portion 230 is connected to the outside. The outer edge portion 230 is typically a waste side. A hollow space 250 is provided between the bracket portion 220 and the wafer carrier portion 240. The wafer carrier 240 includes a sidewall contact receptacle 241 exposed to the spacer 250; and a conductive via 242 disposed therein. The side wall contact socket 241 surrounds the periphery of the wafer carrying portion 240 like a castle. The side wall contact socket 241 is for interposing on a circuit board of an electronic product. The production of the multilayer circuit board 200 can be conventionally known as printed circuit board technology, and the conductive and insulating materials used can be referred to various suitable materials. For example, the conductive material may be copper aluminum nickel or the like, the insulating material may be an epoxy resin glass fiber (FR4) substrate, etc.; the solder resist layer may be a commonly used polymer base solder resist green paint. The wire lines 201 to 204, the patterned solder resist layer and the like can be developed by photoresist etching; the fabrication interval 250, the sidewall contact socket 241 and the conductive through hole 242 can be generally drilled or laser drilled and perforated copper plating technology. Etching techniques can also be used. 2B is a top view of the multilayer wiring board 200 shown in FIG. 2A. The multilayer wiring board 200 shown in Fig. 2A is a cross-sectional view taken along the broken line B-B' of Fig. 2B. As is clear from FIG. 2B, the bracket portion 220 surrounds the wafer carrier 240 in a mesh structure, and the space 250 is interposed between the bracket portion 220 and the wafer carrier portion 240. The outer edge portion 230 is located at the outermost periphery of the multilayer wiring board 200. In particular, it should be noted that the multilayer circuit board 200 has a plurality of wafer carriers 240 that can be used to receive a plurality of wafers. In another embodiment, the multilayer wiring board 200 may also have only one wafer carrier 240. The diagonal position of the wafer carrying portion 240 is provided with a connecting portion 260 for connecting to the bracket portion 220. 2B shows that the surface of the multilayer wiring board 200 is covered with a wire covering layer 208. In another embodiment, the wire cap layer 208 may also have a patterned structure on the wafer carrier 240 to expose the underlying insulating layer 205.

於本實施例,上層黏結膠片300可為一般之熱硬化樹脂薄片,其係用來使多層線路板200之接近最上層導線線路201的表面與上層遮蔽基板500連結。在另一實施例,多層線路板200如已有黏性,則可省略上層黏結膠片300。如圖2A所示,上層黏結膠片300於X方向上的結構係大致與多層線路板200相似。詳言之,上層黏結膠片300也具有支架部320、晶片承載部340、及外緣部330。上層黏結膠片300具有婁空的間隔301對應多層線路板200之間隔250。較佳而言,間隔301係比間隔250大,如此可使上層黏結膠片300在後續的熱壓階段不至於因溢膠而汙染到側壁接觸插座241。圖2C為圖2A所示之上層黏結膠片300的上視圖。圖2A之上層黏結膠片300即為沿圖2C之虛線C-C’的剖面圖。可用沖壓法成型具有婁空的間隔301之上層黏結膠片300。In the present embodiment, the upper bonding film 300 may be a general thermosetting resin sheet for connecting the surface of the multilayer wiring board 200 close to the uppermost wiring line 201 to the upper shielding substrate 500. In another embodiment, if the multilayer wiring board 200 is already viscous, the upper bonding film 300 may be omitted. As shown in FIG. 2A, the structure of the upper bonded film 300 in the X direction is substantially similar to that of the multilayer wiring board 200. In detail, the upper bonding film 300 also has a holder portion 320, a wafer carrying portion 340, and an outer edge portion 330. The upper bonding film 300 has a hollowed space 301 corresponding to the spacing 250 of the multilayer wiring board 200. Preferably, the spacing 301 is greater than the spacing 250 so that the upper bonding film 300 does not contaminate the sidewall contact receptacle 241 due to spillage during subsequent hot pressing stages. 2C is a top view of the overlying adhesive film 300 of FIG. 2A. The upper bonded film 300 of Fig. 2A is a cross-sectional view taken along the line C-C' of Fig. 2C. The layered bonded film 300 having a hollow space 301 can be formed by stamping.

於本實施例,下層黏結膠片400之材料如同上層黏結膠片300,皆為一般之熱硬化樹脂薄片。下層黏結膠片400係用來使多層線路板200之接近最下層導線線路204的表面與下層保護基板600連結。下層保護基板600為一犧牲層,在本實施例製程最後會被移除,因此,下層黏結膠片400只需達到暫時使下層保護基板600黏結於多層線路板200之效果即可。如圖2A所示,下層黏結膠片400具有婁空的間隔401。換言之,下層黏結膠片400只具有對應多層線路板200之外緣部230結構,其餘皆為婁空的間隔401。圖2D為圖2A所示之下層黏結膠片400的上視圖。圖2A之下層黏結膠片400即為沿圖2D之虛線D-D’的剖面圖。可用沖壓法成型具有婁空的間隔401之下層黏結膠片400。In the present embodiment, the material of the lower bonding film 400 is like the upper bonding film 300, which is a general thermosetting resin sheet. The lower bonding film 400 is used to connect the surface of the multilayer wiring board 200 close to the lowermost wiring line 204 to the lower protective substrate 600. The lower protective substrate 600 is a sacrificial layer, which is removed at the end of the process of the embodiment. Therefore, the lower bonding film 400 only needs to achieve the effect of temporarily bonding the lower protective substrate 600 to the multilayer wiring board 200. As shown in FIG. 2A, the lower bonded film 400 has a hollowed space 401. In other words, the lower bonding film 400 has only the structure corresponding to the outer edge portion 230 of the multilayer wiring board 200, and the rest are hollow spaces 401. Figure 2D is a top plan view of the underlying bonded film 400 of Figure 2A. The lower layer bonded film 400 of Fig. 2A is a cross-sectional view taken along the dotted line D-D' of Fig. 2D. The adhesive film 400 having a void interval 401 can be formed by stamping.

於本實施例,上層遮蔽基板500至少有兩種用途,一為用於製作一外層線路以形成一晶片接觸結構,另一為形成一遮蔽用以防止後續封裝用樹脂膠液滲入側壁接觸插座241或多層線路板200上已完成的其他各種線路。如圖2A所示,上層遮蔽基板500可包含一絕緣遮蔽層501及一外層導體層502。本實施例使用銅箔環氧樹脂玻纖(FR4)基板作上層遮蔽基板500,然本發明並非限定於此,熟悉技藝者再看過本發明後認為任何可達成本發明之上述用途的材料皆可用。In the present embodiment, the upper shielding substrate 500 has at least two uses, one for forming an outer layer to form a wafer contact structure, and the other for forming a mask for preventing the subsequent sealing of the resin glue into the sidewall contact socket 241. Or other various lines that have been completed on the multilayer circuit board 200. As shown in FIG. 2A, the upper shielding substrate 500 may include an insulating shielding layer 501 and an outer conductor layer 502. In this embodiment, a copper foil epoxy fiberglass (FR4) substrate is used as the upper shielding substrate 500. However, the present invention is not limited thereto, and those skilled in the art can see that any material that can achieve the above-mentioned use of the invention can be used. .

於本實施例,下層保護基板600至少有一用途,其在於後續外層線路的製作過程中,防止製程藥水或其他各種雜質污染側壁接觸插座241或多層線路板200上已完成的其他各種線路。本實施例使用銅箔環氧樹脂玻纖(FR4)基板作下層保護基板600,然本發明並非限定於此,熟悉技藝者再看過本發明後認為任何可達成本發明之上述用途的材料皆適用。In the present embodiment, the underlying protective substrate 600 has at least one use in that during the fabrication of the subsequent outer layer, the process syrup or other various impurities are prevented from contaminating the sidewalls from contacting the socket 241 or other various lines that have been completed on the multilayer wiring board 200. In this embodiment, a copper foil epoxy fiberglass (FR4) substrate is used as the lower layer protection substrate 600. However, the present invention is not limited thereto, and those skilled in the art can see that any material that can achieve the above-mentioned use of the invention is applicable. .

接著參考圖3,顯示一壓合步驟。將上述之各層,即多層線路板200、上層黏結膠片300、下層黏結膠片400、上層遮蔽基板500及下層保護基板600,依如圖所示之順序擺設後進行壓合。壓合可採用一般之熱壓機,溫度及壓力可視實際需要調整。除上述各層,也可視需要加如其他功能的薄層。Referring next to Figure 3, a press-fit step is shown. The above layers, that is, the multilayer wiring board 200, the upper bonding film 300, the lower bonding film 400, the upper shielding substrate 500, and the lower protective substrate 600 are arranged in the order shown in the figure, and then pressed. Pressing can be carried out by a general hot press, and the temperature and pressure can be adjusted according to actual needs. In addition to the above layers, a thin layer such as other functions may be added as needed.

接著參考圖4,針對外層導體層502,以習知之印刷電路板技術進行外層線路的製作以形成一晶片接觸結構。如圖4所示,可以習知鑽孔鍍銅技術形成導電通孔505穿過絕緣遮蔽層501以連通下方之導電貫穿孔242;可以藉由蝕刻去除一部分之外層導體層502以形成婁空的間隔503;可以進一步形成晶片導電接點507於外層導體層502上並塗佈外層防焊層509。如同前述之間隔250,間隔503可將外層導體層502中作為支架的部分與作為晶片承載部隔開。藉由間隔503,外層線路每個置放晶片的位置將會清楚顯露。蝕刻外層導體層502時應注意控制製程條件使蝕刻止於底下的絕緣遮蔽層501。換言之,間隔503並不穿透絕緣遮蔽層501。如之前所述,由於有下層保護基板600,故在外層線路的製作過程中,將可避免製程藥水或其他各種雜質對側壁接觸插座241或多層線路板200上事先完成的其他各種線路造成污染。Referring next to Figure 4, for the outer conductor layer 502, the outer layer is fabricated using conventional printed circuit board technology to form a wafer contact structure. As shown in FIG. 4, it can be known that the hole copper plating technique forms a conductive via 505 through the insulating mask layer 501 to communicate with the underlying conductive via 242; a portion of the outer conductor layer 502 can be removed by etching to form a hollow The spacer 503; the wafer conductive contact 507 may be further formed on the outer conductor layer 502 and the outer solder resist layer 509 is coated. As with the spacing 250 described above, the spacing 503 can separate the portion of the outer conductor layer 502 that serves as a support from the wafer carrier. By spacing 503, the position of each of the outer layers of the wafer will be clearly revealed. When etching the outer conductor layer 502, care should be taken to control the process conditions so that the etching stops at the underlying insulating mask layer 501. In other words, the spacer 503 does not penetrate the insulating mask layer 501. As described above, since the underlying protective substrate 600 is provided, it is possible to prevent the process syrup or other various impurities from contaminating the sidewall contact socket 241 or other various lines previously completed on the multilayer wiring board 200 during the fabrication of the outer layer wiring.

外層線路的製作完成後,即可用成型機加工或沖壓法沖型加工或其它合適方式將下層黏結膠片400及下層保護基板600一併去除。圖5顯示下層保護基板600去除後所形成之晶片載板700。如圖5所示,晶片載板700包含晶片承載部702;支架部701橫向地環繞晶片承載部702;一間隔710用以隔開晶片承載部702與支架部701;及一外緣部712連接支架部701並橫向地環繞晶片載板700之外圍。晶片載板700包含上層之晶片接觸結構704及下層之電路板接觸結構705。絕緣遮蔽層501橫跨間隔710而橫向地連結晶片承載部702與支架部701。絕緣遮蔽層501更橫向延伸進入晶片接觸結構704與電路板接觸結構705之間,並從另一角度橫向延伸進入支架部701。After the outer layer is completed, the lower bonded film 400 and the lower protective substrate 600 can be removed by molding or stamping or other suitable means. FIG. 5 shows the wafer carrier 700 formed after the underlying protective substrate 600 is removed. As shown in FIG. 5, the wafer carrier 700 includes a wafer carrier 702; the carrier portion 701 laterally surrounds the wafer carrier 702; a spacer 710 for spacing the wafer carrier 702 from the carrier portion 701; and an outer edge portion 712 The bracket portion 701 surrounds the periphery of the wafer carrier 700 laterally. Wafer carrier 700 includes an upper wafer contact structure 704 and a lower circuit board contact structure 705. The insulating shielding layer 501 laterally connects the wafer carrying portion 702 and the bracket portion 701 across the interval 710. The insulating masking layer 501 extends laterally between the wafer contact structure 704 and the board contact structure 705 and laterally extends into the bracket portion 701 from another angle.

圖6顯示於圖5所示之晶片載板700上黏裝晶片801並注入適當量的樹脂膠液使其覆蓋晶片801封裝絕緣體802之封裝結構。應注意封裝絕緣體801係可覆蓋絕緣遮蔽層501橫跨間隔710的部分。沿如圖6所示之虛線進行切割,即可獲得個別的封裝晶粒。從圖6可瞭解絕緣遮蔽層501可用以防止封裝用樹脂膠液滲入下方之電路板接觸結構705。6 shows a package structure in which a wafer 801 is adhered to the wafer carrier 700 shown in FIG. 5 and an appropriate amount of resin glue is injected to cover the wafer 801 package insulator 802. It should be noted that the package insulator 801 may cover a portion of the insulating mask layer 501 that spans the gap 710. Individual packaged dies can be obtained by cutting along the dashed line as shown in FIG. It can be understood from FIG. 6 that the insulating mask layer 501 can be used to prevent the resin glue for encapsulation from penetrating into the underlying circuit board contact structure 705.

圖7為本發明另一實施例之晶片載板700’實作之照片(上視圖)。從圖7可看到晶片載板700’包含複數個支架部701’、複數個晶片載板部702’及銜接上述兩者之連接部703’。支架部701’與晶片載板部702’之間為絕緣遮蔽層501’,用以防止後續封裝用樹脂膠液滲入下方之電路板接觸結構。Figure 7 is a photograph (top view) of a wafer carrier 700' according to another embodiment of the present invention. As can be seen from Fig. 7, the wafer carrier 700' includes a plurality of holder portions 701', a plurality of wafer carrier portions 702', and a connecting portion 703' that connects the two. An insulating shielding layer 501' is interposed between the holder portion 701' and the wafer carrier portion 702' to prevent the resin glue liquid for subsequent encapsulation from penetrating into the underlying circuit board contact structure.

以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the following. Within the scope of the patent application.

100...晶片封裝結構100. . . Chip package structure

110...晶片載板110. . . Wafer carrier

112...側向接觸插槽112. . . Lateral contact slot

114...連接墊114. . . Connection pad

120...晶片120. . . Wafer

130...封裝絕緣體130. . . Package insulator

200...多層線路板200. . . Multi-layer circuit board

201,202,203,204...導線線路201,202,203,204. . . Wire line

205,206,207...絕緣層205,206,207. . . Insulation

208,209...導線覆蓋層208,209. . . Wire cover

210...防焊層210. . . Solder mask

220...支架部220. . . Bracket

230...外緣部230. . . Outer edge

240...晶片承載部240. . . Wafer carrier

241...側壁接觸插座241. . . Side wall contact socket

242...導電貫穿孔242. . . Conductive through hole

250...間隔250. . . interval

260...連接部260. . . Connection

300...上層黏結膠片300. . . Upper bonding film

320...支架部320. . . Bracket

340...晶片承載部340. . . Wafer carrier

330...外緣部330. . . Outer edge

301...間隔301. . . interval

400...下層黏結膠片400. . . Underlying bonding film

401...間隔401. . . interval

500...上層遮蔽基板500. . . Upper shielding substrate

501,501’...絕緣遮蔽層501,501’. . . Insulating shielding layer

502...外層導體層502. . . Outer conductor layer

505...導電通孔505. . . Conductive through hole

503...間隔503. . . interval

507...晶片導電接點507. . . Wafer conductive contact

509...外層防焊層509. . . Outer solder mask

600...下層保護基板600. . . Lower protective substrate

700,700’...晶片載板700,700’. . . Wafer carrier

701,701’...支架部701,701’. . . Bracket

702,702’...晶片承載部702,702’. . . Wafer carrier

703’...連接部703’. . . Connection

704...晶片接觸結構704. . . Wafer contact structure

705...電路板接觸結構705. . . Board contact structure

710...間隔710. . . interval

712...外緣部712. . . Outer edge

801...晶片801. . . Wafer

802...封裝絕緣體802. . . Package insulator

圖1為習知封裝結構剖面示意圖;1 is a schematic cross-sectional view of a conventional package structure;

圖2A至2D及圖3至圖5為依據本發明之一實施例例示一晶片載板之製作過程的剖面示意圖與上視示意圖;2A to 2D and 3 to 5 are schematic cross-sectional views and a top view showing a process of fabricating a wafer carrier according to an embodiment of the invention;

圖6為依據本發明之實施例所製作之封裝結構剖面示意圖;6 is a cross-sectional view showing a package structure fabricated in accordance with an embodiment of the present invention;

圖7為依據本發明之實施例所製作之晶片載板的上視照片。Figure 7 is a top plan view of a wafer carrier made in accordance with an embodiment of the present invention.

200‧‧‧多層線路板200‧‧‧Multilayer circuit board

250‧‧‧間隔250‧‧‧ interval

300‧‧‧上層黏結膠片300‧‧‧Upper bonding film

501‧‧‧絕緣遮蔽層501‧‧‧Insulation shielding layer

502‧‧‧外層導體層502‧‧‧ outer conductor layer

503‧‧‧間隔503‧‧‧ interval

700‧‧‧晶片載板700‧‧‧ wafer carrier

701‧‧‧支架部701‧‧‧ bracket

702‧‧‧晶片承載部702‧‧‧ wafer carrier

704‧‧‧晶片接觸結構704‧‧‧ wafer contact structure

705‧‧‧電路板接觸結構705‧‧‧Board contact structure

710‧‧‧間隔710‧‧‧ interval

712‧‧‧外緣部712‧‧‧The outer edge

Claims (14)

一種晶片載板,包含:一晶片承載部,垂直設有一第一接觸結構、一第二接觸結構;一支架部,橫向地環繞該晶片承載部;一間隔,隔開該晶片承載部與該支架部;及一遮蔽層橫向延伸橫跨該間隔而連結該晶片承載部與該支架部。A wafer carrier comprising: a wafer carrying portion vertically provided with a first contact structure and a second contact structure; a bracket portion laterally surrounding the wafer carrying portion; a space separating the wafer carrying portion and the bracket And a shielding layer extending laterally across the spacing to join the wafer carrier and the bracket portion. 如請求項1所述之晶片載板,其中該第一接觸結構係用以電性接觸一晶片,該第二接觸結構用以電性接觸一電路板。The wafer carrier of claim 1, wherein the first contact structure is for electrically contacting a wafer, and the second contact structure is for electrically contacting a circuit board. 如請求項1所述之晶片載板,其中該第二接觸結構更包含一側壁接觸插座暴露於該間隔中。The wafer carrier of claim 1 wherein the second contact structure further comprises a sidewall contact receptacle exposed to the spacer. 如請求項1所述之晶片載板,其中該遮蔽層係橫向延伸進入該第一接觸結構與該第二接觸結構之間。The wafer carrier of claim 1, wherein the shielding layer extends laterally between the first contact structure and the second contact structure. 如請求項1所述之晶片載板,其中該遮蔽層係橫向延伸進入該支架部。The wafer carrier of claim 1 wherein the masking layer extends laterally into the bracket portion. 一種封裝結構,包含:如請求項1所述之晶片載板;一晶片設置於該第一接觸結構上;及一封裝絕緣體覆蓋該晶片。A package structure comprising: the wafer carrier as claimed in claim 1; a wafer disposed on the first contact structure; and a package insulator covering the wafer. 如請求項6所述之封裝結構,其中該封裝絕緣體係覆蓋該遮蔽層橫跨該間隔的部分。The package structure of claim 6, wherein the package insulation system covers a portion of the shielding layer that spans the space. 一種晶片載板的形成方法,包含:提供一多層線路板,一上層遮蔽基板及一下層保護基板,該多層線路板包含一晶片承載部,一支架部環繞該晶片承載部及一間隔介於該晶片承載部與該支架部之間;進行一壓合步驟以連結該多層線路板,該上層遮蔽基板與該下層保護基板,該多層線路板介於該上層遮蔽基板與該下層保護基板之間,該上層遮蔽基板橫跨該間隔;及形成一第二接觸結構於該晶片承載部上方。A method for forming a wafer carrier, comprising: providing a multilayer circuit board, an upper shielding substrate and a lower protection substrate, the multilayer circuit board comprising a wafer carrying portion, a bracket portion surrounding the wafer carrying portion and a spacing between Between the wafer carrying portion and the bracket portion; performing a pressing step to join the multilayer circuit board, the upper layer shielding substrate and the lower layer protection substrate, the multilayer circuit board being interposed between the upper shielding substrate and the lower protective substrate The upper shielding substrate spans the space; and a second contact structure is formed over the wafer carrier. 如請求項8所述之晶片載板的形成方法,更包含在該第二接觸結構形成之後,移除該下層保護基板。The method of forming a wafer carrier according to claim 8, further comprising removing the underlying protective substrate after the second contact structure is formed. 如請求項8所述之晶片載板的形成方法,更包含在該壓合步驟之前,放置一上層黏結膠片於該多層線路板與該上層遮蔽基板之間。The method for forming a wafer carrier according to claim 8, further comprising placing an upper bonding film between the multilayer wiring board and the upper shielding substrate before the pressing step. 如請求項8所述之晶片載板的形成方法,更包含在該壓合步驟之前,放置一下層黏結膠片於該多層線路板與該下層保護基板之間。The method for forming a wafer carrier according to claim 8, further comprising placing a layer of adhesive film between the multilayer wiring board and the lower protective substrate before the pressing step. 如請求項8所述之晶片載板的形成方法,其中該上層遮蔽基板係包含一遮蔽層及一外層導體層,該外層導體層用以形成該第二接觸結構。The method of forming a wafer carrier according to claim 8, wherein the upper shielding substrate comprises a shielding layer and an outer conductor layer, and the outer conductor layer is used to form the second contact structure. 一種封裝結構的形成方法,包含:提供如請求項1所述之晶片載板;及將一晶片設置於該第一接觸結構上;及形成一封裝絕緣體覆蓋該晶片。A method of forming a package structure, comprising: providing a wafer carrier as claimed in claim 1; and disposing a wafer on the first contact structure; and forming a package insulator to cover the wafer. 如請求項13所述之封裝結構,其中該封裝絕緣體係覆蓋該遮蔽層橫跨該間隔的部分。The package structure of claim 13, wherein the package insulation system covers a portion of the shielding layer that spans the space.
TW098135051A 2009-10-16 2009-10-16 Wafer carrier board and package structure and method thereof TWI398935B (en)

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US4317125A (en) * 1978-05-31 1982-02-23 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Field effect devices and their fabrication
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