TWI391531B - Copper foil for printed circuit board, method of preparing the same, and flexible copper clad laminate using polyamic acid precursor and copper foil - Google Patents
Copper foil for printed circuit board, method of preparing the same, and flexible copper clad laminate using polyamic acid precursor and copper foil Download PDFInfo
- Publication number
- TWI391531B TWI391531B TW098124127A TW98124127A TWI391531B TW I391531 B TWI391531 B TW I391531B TW 098124127 A TW098124127 A TW 098124127A TW 98124127 A TW98124127 A TW 98124127A TW I391531 B TWI391531 B TW I391531B
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- Taiwan
- Prior art keywords
- copper foil
- compound
- group
- circuit board
- printed circuit
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 151
- 239000011889 copper foil Substances 0.000 title claims description 137
- 238000000034 method Methods 0.000 title claims description 19
- 239000010949 copper Substances 0.000 title claims description 15
- 229910052802 copper Inorganic materials 0.000 title claims description 14
- 229920005575 poly(amic acid) Polymers 0.000 title claims description 8
- 239000002243 precursor Substances 0.000 title 1
- -1 fluorenyl compound Chemical class 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 36
- 150000001875 compounds Chemical class 0.000 claims description 31
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 24
- 239000000047 product Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 11
- 239000000178 monomer Substances 0.000 claims description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 9
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 108010039918 Polylysine Proteins 0.000 claims description 7
- 229920000656 polylysine Polymers 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 150000004985 diamines Chemical class 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 claims description 4
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229940018564 m-phenylenediamine Drugs 0.000 claims description 3
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 claims description 2
- FJVIHKKXPLPDSV-UHFFFAOYSA-N 4-phenoxybenzene-1,2-diamine Chemical compound C1=C(N)C(N)=CC=C1OC1=CC=CC=C1 FJVIHKKXPLPDSV-UHFFFAOYSA-N 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 239000008199 coating composition Substances 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 claims 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 claims 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- 125000006160 pyromellitic dianhydride group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 description 41
- 230000000052 comparative effect Effects 0.000 description 31
- 229920001721 polyimide Polymers 0.000 description 31
- 238000004381 surface treatment Methods 0.000 description 26
- 239000002966 varnish Substances 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000012299 nitrogen atmosphere Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 11
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000011259 mixed solution Substances 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 7
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000005481 NMR spectroscopy Methods 0.000 description 6
- 239000011877 solvent mixture Substances 0.000 description 6
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 5
- 108010002350 Interleukin-2 Proteins 0.000 description 5
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007719 peel strength test Methods 0.000 description 5
- 239000012756 surface treatment agent Substances 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 229940125904 compound 1 Drugs 0.000 description 4
- 229940126214 compound 3 Drugs 0.000 description 4
- 238000002845 discoloration Methods 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 4
- 229910001297 Zn alloy Inorganic materials 0.000 description 3
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 150000001845 chromium compounds Chemical class 0.000 description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 3
- 150000003949 imides Chemical class 0.000 description 3
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 2
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- ABHSCNLDUBMZKC-UHFFFAOYSA-N NCCCC(C(OC)(OC)OC)CCCCCCC Chemical compound NCCCC(C(OC)(OC)OC)CCCCCCC ABHSCNLDUBMZKC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229920001646 UPILEX Polymers 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229940117975 chromium trioxide Drugs 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical compound O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 2
- 235000011180 diphosphates Nutrition 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- IBIKHMZPHNKTHM-RDTXWAMCSA-N merck compound 25 Chemical compound C1C[C@@H](C(O)=O)[C@H](O)CN1C(C1=C(F)C=CC=C11)=NN1C(=O)C1=C(Cl)C=CC=C1C1CC1 IBIKHMZPHNKTHM-RDTXWAMCSA-N 0.000 description 2
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- 229940014800 succinic anhydride Drugs 0.000 description 2
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- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- 238000005160 1H NMR spectroscopy Methods 0.000 description 1
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- KDHWOCLBMVSZPG-UHFFFAOYSA-N 3-imidazol-1-ylpropan-1-amine Chemical compound NCCCN1C=CN=C1 KDHWOCLBMVSZPG-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- BWGRDBSNKQABCB-UHFFFAOYSA-N 4,4-difluoro-N-[3-[3-(3-methyl-5-propan-2-yl-1,2,4-triazol-4-yl)-8-azabicyclo[3.2.1]octan-8-yl]-1-thiophen-2-ylpropyl]cyclohexane-1-carboxamide Chemical compound CC(C)C1=NN=C(C)N1C1CC2CCC(C1)N2CCC(NC(=O)C1CCC(F)(F)CC1)C1=CC=CS1 BWGRDBSNKQABCB-UHFFFAOYSA-N 0.000 description 1
- YRUNRRDPUSMXAT-UHFFFAOYSA-N C(C1CO1)OCCC[Si](OC)(OC)OC.C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C(C1CO1)OCCC[Si](OC)(OC)OC.C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC YRUNRRDPUSMXAT-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- SFIHQZFZMWZOJV-UHFFFAOYSA-N Linolsaeure-amid Natural products CCCCCC=CCC=CCCCCCCCC(N)=O SFIHQZFZMWZOJV-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- DFJCYPRWCUFLBQ-UHFFFAOYSA-N NCCCC(C(OCC)(OCC)OCC)CCCCCCC Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCC DFJCYPRWCUFLBQ-UHFFFAOYSA-N 0.000 description 1
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- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 1
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- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
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- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- GTLDTDOJJJZVBW-UHFFFAOYSA-N zinc cyanide Chemical compound [Zn+2].N#[C-].N#[C-] GTLDTDOJJJZVBW-UHFFFAOYSA-N 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0154—Polyimide
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
Description
本申請案主張優先權為2008年7月18日在韓國智財局申請的韓國專利申請號10-2008-0070081,其揭露內容在此併入本文參考。 The present application claims priority to Korean Patent Application No. 10-2008-0070081, filed on Jan.
本發明是有關於一種印刷電路板(printed circuit board;PCB)用的銅箔、銅箔的製備方法以及包含銅箔之可撓性覆銅層壓板(flexible copper clad laminate;FCCL),且特別是有關於一種包含矽烷基(silane-based)化合物或矽烷基化合物之水解物(hydrolysate)之表面處理薄膜形成於上之PCB用之經表面處理的銅箔,以及包含此銅箔之FCCL。 The present invention relates to a copper foil for a printed circuit board (PCB), a method for preparing the copper foil, and a flexible copper clad laminate (FCCL) including a copper foil, and in particular A surface-treated copper foil for a PCB on which a surface-treated film comprising a silane-based compound or a hydrolysate of a mercapto compound is formed, and an FCCL comprising the copper foil.
可撓性覆銅層壓板(FCCL)為印刷電路板(PCB)之一種形式,且其現今需求日漸增加。FCCL為由二或三層形成之多層薄膜,其中聚醯亞胺(polyimide)薄膜層壓在銅箔上。當印刷在FCCL上之佈線的準確性增加,蝕刻的準確性也同樣增加,因此需要降低銅箔之表面粗糙度。然而,當降低銅箔之表面粗糙度時,銅箔與基板(例如,聚醯亞胺薄膜)之間的剝離強度(peel strength)會下降。在這點上,需要提高剝離強度之手段。 Flexible copper clad laminates (FCCL) are a form of printed circuit board (PCB) and their demand today is increasing. The FCCL is a multilayer film formed of two or three layers in which a polyimide film is laminated on a copper foil. As the accuracy of the wiring printed on the FCCL increases, the accuracy of etching also increases, so it is necessary to reduce the surface roughness of the copper foil. However, when the surface roughness of the copper foil is lowered, the peel strength between the copper foil and the substrate (for example, a polyimide film) may decrease. At this point, there is a need to improve the peel strength.
PCB用的銅箔通常使用矽烷耦合劑為銅箔之表面處理劑以進行之,用以強化銅箔與基板之間的剝離強度,其揭露於日本專利申請案1990-026097。 The copper foil for PCB is usually used as a surface treatment agent for copper foil using a decane coupling agent for strengthening the peeling strength between the copper foil and the substrate, which is disclosed in Japanese Patent Application Laid-Open No. 1990-026097.
然而,隨著使用在PCB中之銅箔之物理性質的要求變嚴(tight),仍然需要具有改良物理性質之表面處理薄膜形成於上之用於PCB的銅箔。 However, as the requirements for the physical properties of the copper foil used in the PCB become tight, there is still a need for a copper foil for a PCB on which a surface-treated film having improved physical properties is formed.
本發明提供印刷電路板(PCB)用之經表面處理的銅箔,其包含提供基板與銅箔之間優良剝離強度之新的矽烷基化合物或新的矽烷基化合物的水解物,本發明還提供PCB用之銅箔的製備方法,以及包含聚醯亞胺層堆疊在PCB用之銅箔上的可撓性覆銅層壓板(FCCL)。 The present invention provides a surface treated copper foil for a printed circuit board (PCB) comprising a hydrolyzate of a novel germanium alkyl compound or a novel germanium alkyl compound which provides excellent peel strength between the substrate and the copper foil, and the present invention also provides A method for preparing a copper foil for PCB, and a flexible copper clad laminate (FCCL) comprising a polyimide layer stacked on a copper foil for PCB.
根據本發明之一方面,提供印刷電路板(PCB)用之經表面處理的銅箔,其包含形成在銅箔上的防鏽層及形成在防鏽層上的表面處理薄膜,其中表面處理薄膜包含選自由式1至式4表示的矽烷基化合物所組成之族群的至少一化合物,或所述矽烷基化合物的水解物: According to an aspect of the invention, there is provided a surface-treated copper foil for a printed circuit board (PCB) comprising a rustproof layer formed on a copper foil and a surface treated film formed on the rustproof layer, wherein the surface treated film At least one compound comprising a group selected from the group consisting of a fluorenyl compound represented by Formulas 1 to 4, or a hydrolyzate of the decyl compound:
<式3>
其中R1、R2及R3各自獨立為C1至C3的烷基,且R4及R5各自獨立為氫或C1至C5的烷基。 Wherein R 1 , R 2 and R 3 are each independently a C 1 to C 3 alkyl group, and R 4 and R 5 are each independently hydrogen or a C 1 to C 5 alkyl group.
根據本發明之另一方面,提供印刷電路板(PCB)用之經表面處理的銅箔的製備方法,此方法包含:於銅箔上形成防鏽層;清洗及乾燥防鏽層形成於上的銅箔,以及塗覆組成物於防鏽層上,且乾燥經塗覆之防鏽層,從而製備表面處理薄膜,所述組成物包含選自由式1至式4表示的矽烷基化合物所組成之族群的至少一化合物或所述矽烷基化合物的水解物:
<式2>
其中R1、R2及R3各自獨立為C1至C3的烷基,且R4及R5各自獨立為氫或C1至C5的烷基。 Wherein R 1 , R 2 and R 3 are each independently a C 1 to C 3 alkyl group, and R 4 and R 5 are each independently hydrogen or a C 1 to C 5 alkyl group.
根據本發明又一方面,提供可撓性覆銅層壓板(FCCL),其包含上述PCB用之經表面處理的銅箔;以及形成在銅箔之表面處理薄膜上的聚醯亞胺薄膜。 According to still another aspect of the present invention, there is provided a flexible copper clad laminate (FCCL) comprising the surface treated copper foil for the above PCB; and a polyimide film formed on the surface treated film of the copper foil.
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the present invention will be more apparent from the following description.
以下,將根據本發明之實施例更詳細地描述印刷電路板(PCB)用之經表面處理的銅箔、PCB用之銅箔的製備方法以及 可撓性覆銅層壓板(FCCL)。 Hereinafter, a method of preparing a surface-treated copper foil for a printed circuit board (PCB), a copper foil for a PCB, and a method for manufacturing a PCB according to an embodiment of the present invention will be described in more detail. Flexible copper clad laminate (FCCL).
根據本實施例,PCB用之經表面處理的銅箔包含形成在銅箔上的防鏽層及形成在防鏽層上的表面處理薄膜,其中表面處理薄膜包含選自由式1至式4表示的矽烷基化合物所組成之族群的至少一化合物,或所述矽烷基化合物的水解物。 According to the embodiment, the surface-treated copper foil for PCB includes a rustproof layer formed on the copper foil and a surface-treated film formed on the rust-preventing layer, wherein the surface-treated film comprises a film selected from the group consisting of Formulas 1 to 4. At least one compound of the group consisting of a decyl compound, or a hydrolyzate of the decyl compound.
<式4>
其中R1、R2及R3各自獨立為C1至C3的烷基,且R4及R5各自獨立為氫或C1至C5的烷基。 Wherein R 1 , R 2 and R 3 are each independently a C 1 to C 3 alkyl group, and R 4 and R 5 are each independently hydrogen or a C 1 to C 5 alkyl group.
矽烷基化合物在其一端具有矽氧烷基(siloxane group)用以與銅箔形成共價鍵,在其另一端具有咪唑基(imidazole group)和/或亞醯胺基(imide group),其中咪唑基和/或亞醯胺具有與聚醯亞胺薄膜相似的結構,從而提高與聚醯亞胺薄膜的鍵結強度。所以,可以提高銅箔與聚醯亞胺薄膜之間的鍵結強度。 The oxime compound has a siloxane group at one end thereof to form a covalent bond with the copper foil, and an imidazole group and/or an imide group at the other end, wherein the imidazole group The base and/or linoleamide has a structure similar to that of the polyimide film, thereby increasing the bonding strength with the polyimide film. Therefore, the bonding strength between the copper foil and the polyimide film can be improved.
特別是,包含於矽烷基化合物中的烷氧基(alkoxy group,-OR)與存在於金屬表面中的羥基(hydroxy group)反應,以形成矽氧烷鍵(siloxane bond)。包含於矽烷基化合物中的矽氧烷基也可以與金屬表面形成矽氧烷鍵。 In particular, an alkoxy group (-OR) contained in a decyl group compound reacts with a hydroxy group present in a metal surface to form a siloxane bond. The decyloxy group contained in the decyl group compound may also form a decane bond with the metal surface.
根據本發明另一實施例,矽烷基化合物中之R1、R2及R3各自獨立為甲基或乙基,且R4及R5可以為氫。 According to another embodiment of the present invention, R 1 , R 2 and R 3 in the fluorenyl compound are each independently a methyl group or an ethyl group, and R 4 and R 5 may be hydrogen.
根據本發明另一實施例,可以進一步於銅箔與防鏽層之間插入阻熱層(heat-blocking layer)。阻熱層可以(例如)由鋅合金形成且其厚度可以是幾十至幾百奈米(nm)。形成阻熱層之金屬或合金沒有特別限制,且可以使用本發明所屬領域用作阻熱層之任何金屬或合金。 According to another embodiment of the present invention, a heat-blocking layer may be further interposed between the copper foil and the rustproof layer. The heat resistant layer may be formed, for example, of a zinc alloy and may have a thickness of several tens to several hundreds of nanometers (nm). The metal or alloy forming the heat-resistant layer is not particularly limited, and any metal or alloy used as a heat-resistant layer in the field to which the present invention pertains can be used.
根據本發明另一實施例,可以進一步於銅箔與阻熱層 之間插入小節(nodules)。藉由使具有電流密度為10至150 A/dm2之電流在10℃至40℃的溫度流經電解液,其中電解液包含1至40 g/L的銅金屬及30至250 g/L的硫酸。 According to another embodiment of the present invention, nodules may be further inserted between the copper foil and the heat resistant layer. By flowing a current having a current density of 10 to 150 A/dm 2 at a temperature of 10 ° C to 40 ° C, wherein the electrolyte contains 1 to 40 g/L of copper metal and 30 to 250 g/L sulfuric acid.
防鏽層可以包含用作防鏽劑之三氧化鉻(chromium trioxide)、鉻酸(chromic acid)、二鉻酸(dichromic acid)、重鉻酸鈉(sodium dichromate)或鉻酸鹽(chromate)。防鏽層可以藉由使具有電流密度為0.01至10 A/dm2之電流在10℃至50℃的溫度流經電解液,且防鏽劑的濃度為0.1至10 g/L,以形成具有數十至數百奈米的厚度。阻熱層可以由鋅合金、鎳合金或鈷合金形成,且可以形成具有數十至數百奈米的厚度。 The rustproof layer may contain chromium trioxide, chromic acid, dichromic acid, sodium dichromate or chroma as a rust inhibitor. The rustproof layer can be formed by causing a current having a current density of 0.01 to 10 A/dm 2 to flow through the electrolyte at a temperature of 10 ° C to 50 ° C, and the concentration of the rust inhibitor is 0.1 to 10 g/L. A thickness of tens to hundreds of nanometers. The heat resistant layer may be formed of a zinc alloy, a nickel alloy, or a cobalt alloy, and may be formed to have a thickness of several tens to several hundreds of nanometers.
銅箔通常形成在基板上為本發明所述領域所熟知。雖然省略基板的額外描述,但並不排除使用基板。 Copper foil is typically formed on a substrate as is well known in the art of the present invention. Although an additional description of the substrate is omitted, the use of the substrate is not excluded.
根據本發明另一實施例,PCB用之銅箔的製備方法可以包含:於銅箔上形成防鏽層;清洗及乾燥防鏽層形成於上的銅箔,以及塗覆組成物於防鏽層上,且乾燥經塗覆之防鏽層,從而製備表面處理薄膜,所述組成物包含選自由式1至式4表示的矽烷基化合物所組成之族群的至少一化合物或所述矽烷基化合物的水解物。 According to another embodiment of the present invention, a method for preparing a copper foil for a PCB may include: forming a rustproof layer on the copper foil; cleaning and drying the copper foil on which the rustproof layer is formed, and coating the composition on the rustproof layer And coating the rust-preventing layer to prepare a surface-treated film comprising at least one compound selected from the group consisting of the fluorenyl compounds represented by Formulas 1 to 4 or the decyl compound Hydrolyzate.
<式2>
其中R1、R2及R3各自獨立為C1至C3的烷基,且R4及R5各自獨立為氫或C1至C5的烷基。 Wherein R 1 , R 2 and R 3 are each independently a C 1 to C 3 alkyl group, and R 4 and R 5 are each independently hydrogen or a C 1 to C 5 alkyl group.
銅箔可以藉由在欲進行電鍍之材料或基板上進行銅電鍍而製備之。在銅電鍍中,可以使用酸電鍍溶液或鹼電鍍溶液。酸電鍍溶液可以包含硫酸銅(copper sulfate)、氟硼酸銅(copper fluoroborate)或磺醯胺酸銅(sulfamic acid copper)之電鍍溶液,且鹼電鍍溶液可以包含氰化亞銅(copper cyanide)或焦磷酸銅(copper prophosphate)之電鍍溶液。根據本發明一實施例,使用在銅箔之製備中的電鍍溶液並無特別限制,且可以使用本發明所屬領域使用的任何電鍍溶液。 The copper foil can be prepared by copper plating on a material or substrate to be electroplated. In copper plating, an acid plating solution or an alkali plating solution can be used. The acid plating solution may comprise a plating solution of copper sulfate, copper fluoroborate or sulfamic acid copper, and the alkali plating solution may contain copper cyanide or coke. Electroplating solution of copper phosphate (copper prophosphate). According to an embodiment of the present invention, the plating solution used in the preparation of the copper foil is not particularly limited, and any plating solution used in the field to which the present invention pertains may be used.
防鏽層可以藉由電解沈積(electro-depositing)鉻在銅箔的表面上以形成之。使用的鉻化合物可以包含(例如)三氧化鉻、鉻酸、二鉻酸、重鉻酸鈉或鉻酸鹽。鉻化合物之濃度的範圍可以為0.1至10 g/L,例如1.0至10 g/L。當形成防鏽層時,可以進一步添加增效劑(synergist)以提高鉻化合物之電解沈積的效率。增效劑的實例可以包含:鋅化合物例如乙酸鋅(zinc acetate)、氯化鋅(zinc chloride)、氰化鋅(zinc cyanide)、硝酸鋅(zinc nitrate)或硫酸鋅(zinc sulfate);磷化合物例如磷酸、聚磷酸鹽焦磷酸鹽(polyphosphate pyrophosphate)、磷酸鹽(phosphate)或焦磷酸鹽(pyrophosphate);以及有機化合物例如苯並三唑(benzenetriazole)。防鏽層的厚度之範圍可以為0.1至10奈米。 The rustproof layer can be formed by electro-depositing chromium on the surface of the copper foil. The chromium compound used may contain, for example, chromium trioxide, chromic acid, dichromic acid, sodium dichromate or chromate. The concentration of the chromium compound may range from 0.1 to 10 g/L, such as from 1.0 to 10 g/L. When the rustproof layer is formed, a synergist may be further added to increase the efficiency of electrolytic deposition of the chromium compound. Examples of the synergist may include: zinc compounds such as zinc acetate, zinc chloride, zinc cyanide, zinc nitrate or zinc sulfate; phosphorus compounds For example, phosphoric acid, polyphosphate pyrophosphate, phosphate or pyrophosphate; and organic compounds such as benzotriazole. The thickness of the rustproof layer may range from 0.1 to 10 nm.
根據本發明另一實施例,組成物可以包含選自由式1至式4表示的矽烷基化合物所組成之族群的至少一化合物、所述矽烷基化合物之水解物以及溶劑。 According to another embodiment of the present invention, the composition may contain at least one compound selected from the group consisting of the fluorenyl compounds represented by Formulas 1 to 4, a hydrolyzate of the decyl compound, and a solvent.
矽烷基化合物之數量的範圍可以為組成物的0.001至5重量%。當矽烷基化合物的數量為0.001重量%或更低時,表面處理劑之形成的有機層無法充份地塗覆在銅箔上,因此無法提高剝離強度。當矽烷基化合物之數量為5重量%或更高時,表面處理劑之形成的有機層的厚度增加,且覆蓋銅箔上的小節,因此無法提高剝離強度。 The amount of the decyl compound may range from 0.001 to 5% by weight of the composition. When the amount of the decyl group compound is 0.001% by weight or less, the organic layer formed by the surface treatment agent cannot be sufficiently coated on the copper foil, so that the peel strength cannot be improved. When the amount of the decyl group compound is 5% by weight or more, the thickness of the organic layer formed by the surface treatment agent is increased, and the measure on the copper foil is covered, so that the peel strength cannot be improved.
根據本發明另一實施例,溶劑可以包含選自由水、甲醇、乙醇、丙酮、甲基乙基酮(methylethylketone)、甲基乙基酮(methylethylketone)、乙酸乙酯(ethylacetate)及苯(benzene)所組成之族群的至少一種。 According to another embodiment of the present invention, the solvent may comprise a solvent selected from the group consisting of water, methanol, ethanol, acetone, methylethylketone, methylethylketone, ethylacetate, and benzene. At least one of the ethnic groups formed.
根據本發明另一實施例,在上述的方法中,於形成防鏽層之前,可以進一步進行於銅箔上形成阻熱層。形成阻熱層的細節與關於PCB用之銅箔的描述相同,因此不再重複。 According to another embodiment of the present invention, in the above method, the heat resistant layer may be further formed on the copper foil before the formation of the rustproof layer. The details of forming the heat-resistant layer are the same as those described for the copper foil for the PCB, and therefore will not be repeated.
根據本發明另一實施例,在上述的方法中,於形成阻熱層之前,可以進一步進行於銅箔上形成小節。在形成小節中,藉由使用粉狀氧化銅(cupric oxide)產品於銅箔上形成小節,因此銅箔與額外塗覆層之間的接觸面積增加,從而提高銅箔與額外塗覆層之間的剝離強度。 According to another embodiment of the present invention, in the above method, the formation of the measure on the copper foil may be further performed before the formation of the heat resistant layer. In forming the section, by using a cupric oxide product to form a measure on the copper foil, the contact area between the copper foil and the additional coating layer is increased, thereby increasing the copper foil and the additional coating layer. Peel strength.
根據本發明另一實施例,可撓性覆銅層壓板可以包含PCB用的銅箔以及形成在銅箔上之表面處理薄膜上的聚醯亞胺薄膜。 According to another embodiment of the present invention, the flexible copper clad laminate may comprise a copper foil for a PCB and a polyimide film formed on the surface treated film on the copper foil.
可撓性覆銅層壓板根據其使用可以具有二層結構(2-層)或三層結構(3-層)。 The flexible copper clad laminate may have a two-layer structure (2-layer) or a three-layer structure (3-layer) depending on its use.
根據本發明另一實施例,聚醯亞胺薄膜可以為聚醯胺酸(polyamic acid)溶液之硬化產物,且聚醯胺酸可以為至少一個二酐(dianhydride)單體及至少一個二胺(diamine)單體的反應產物,其中至少一個二酐單體可以選自由苯均四酸二酐(pyromellitic dianhydride)、3,3',4,4'-二苯酮四甲酸二酐(3,3’,4,4’-benzophenone tetracarboxylic dianhydride)、3,3',4,4'-聯苯四羧酸二酐(3,3',4,4'-biphenyltetracarboxylic dianhydride)及3,3',4,4'-氧雙鄰苯二甲酸酐(3,3’,4,4’-oxydiphthalic anhydride)所組成之族群,且至少一個二胺單體可以選自由4,4'-二氨基二苯醚(4,4’-oxydianiline)、對苯二胺(para-phenylene diamine)、矽氧烷二胺(siloxanediamine;SD)、3,4-二氨基二苯醚(3,4- oxydianiline)及間苯二胺(meta-phenylenediamine)所組成之族群。 According to another embodiment of the present invention, the polyimide film may be a hardened product of a polyamic acid solution, and the polyphthalic acid may be at least one dianhydride monomer and at least one diamine ( Diamine) a reaction product of a monomer, wherein at least one dianhydride monomer may be selected from the group consisting of pyromellitic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic dianhydride (3,3) ',4,4'-benzophenone tetracarboxylic dianhydride), 3,3',4,4'-biphenyltetracarboxylic dianhydride (3,3',4,4'-biphenyltetracarboxylic dianhydride) and 3,3',4 a group consisting of 4', 3', 4'-oxydiphthalic anhydride, and at least one diamine monomer may be selected from 4,4'-diaminodiphenyl ether (4,4'-oxydianiline), para-phenylene diamine, siloxane diamine (SD), 3,4-diaminodiphenyl ether (3,4- A group of oxydianiline) and meta-phenylenediamine.
矽氧烷二胺(SD)可以具有以下的結構。 The oxane diamine (SD) may have the following structure.
在SD的結構中,n的範圍為2至12。 In the structure of SD, n ranges from 2 to 12.
在二酐單體與二胺單體反應之後,聚醯胺酸為由-C(=O)-NH-鍵連接的化合物。例如,由苯均四酸二酐及二氨基二苯醚反應而得之聚醯胺酸具有以下結構。 After the dianhydride monomer is reacted with the diamine monomer, the polyglycolic acid is a compound linked by a -C(=O)-NH- bond. For example, polylysine obtained by reacting pyromellitic dianhydride and diaminodiphenyl ether has the following structure.
當熱處理聚醯胺酸時,可以得到具有以下結構的聚醯亞胺。 When the polyamic acid is heat-treated, a polyimine having the following structure can be obtained.
聚醯胺酸之熱處理在氮環境下於約60℃開始及最後 於約400℃的高溫結束。在聚醯胺酸及聚醯亞胺中,n的範圍為40至200。 The heat treatment of polylysine begins and ends at about 60 ° C in a nitrogen atmosphere. It ends at a high temperature of about 400 °C. In polylysine and polyimine, n ranges from 40 to 200.
聚醯胺酸亮光漆(varnish)可以例如是PMDA/ODA混合物、BTDA/PDA混合物、BTDA/PMDA/ODA/PDA混合物或PMDA/ODA-SD混合物。可以根據其使用而選擇其適當的混合比率。 The varnish may be, for example, a PMDA/ODA mixture, a BTDA/PDA mixture, a BTDA/PMDA/ODA/PDA mixture or a PMDA/ODA-SD mixture. The appropriate mixing ratio can be selected according to its use.
以下,將參照下述實例更詳細描述本發明;然而,本發明並不以此為限。使用Brucker DRX-300MHz 1H-NMR及Jasco 610 FT-IR來確認在下述實例中經合成之化合物的結構。 Hereinafter, the present invention will be described in more detail with reference to the following examples; however, the invention is not limited thereto. The structure of the compound synthesized in the following examples was confirmed using Brucker DRX-300 MHz 1 H-NMR and Jasco 610 FT-IR.
根據下面的反應機制1來合成由式1表示的化合物1。 Compound 1 represented by Formula 1 was synthesized according to Reaction Mechanism 1 below.
將162.68克的四氫呋喃(tetrahydrofurane)、6.259克(0.05莫耳)的3-縮水甘油醚氧丙基三甲氧基矽烷 (3-glycidoxypropyltrimethoxysilane)及11.817克(0.05莫耳)的1-(3-氨基丙基)咪唑(1-(3-aminopropyl)-imidazole)倒入(charged)反應器中並反應6小時,在氮環境下維持反應器之溫度為95℃,且機械攪拌器以300 rpm旋轉。在完成反應之後,使用旋轉蒸發器2小時以從生成物移除溶劑。然後,在真空烤箱中乾燥生成物24小時,從而得到7克(產率98%)由式1表示的化合物1。 162.68 grams of tetrahydrofurane, 6.259 grams (0.05 moles) of 3-glycidyloxypropyltrimethoxydecane (3-glycidoxypropyltrimethoxysilane) and 11.81 g (0.05 mol) of 1-(3-aminopropyl)-imidazole were charged into the reactor and reacted for 6 hours in nitrogen. The reactor temperature was maintained at 95 ° C and the mechanical stirrer was rotated at 300 rpm. After the reaction was completed, a rotary evaporator was used for 2 hours to remove the solvent from the product. Then, the resultant was dried in a vacuum oven for 24 hours, whereby 7 g (yield 98%) of Compound 1 represented by Formula 1 was obtained.
1H NMR(300 MHz,CD3OD):δ 0.62~0.68(m,1H)、1.89~1.96(m,8H)、1.64~1.67(t,2H)、2.54~2.56(t,7H)、2.58~2.61(m,6H)、3.28~3.31(m,SiOCH3)、3.38~3.40(d,3H)、3.42~3.44(d,4H)、3.50~3.58(m,5H)、3.64(s,-NH-)、3.80(s,OH)、4.05~4.10(m,9H)、6.95(s,10H)、7.12~7.13(t,11H)、7.65(s,12H) 1 H NMR (300 MHz, CD 3 OD): δ 0.62~0.68 (m, 1H), 1.89~1.96 (m, 8H), 1.64~1.67 (t, 2H), 2.54~2.56 (t, 7H), 2.58 ~2.61(m,6H), 3.28~3.31(m,SiOCH 3 ), 3.38~3.40(d,3H), 3.42~3.44(d,4H), 3.50~3.58(m,5H), 3.64(s,- NH-), 3.80 (s, OH), 4.05 to 4.10 (m, 9H), 6.95 (s, 10H), 7.12 to 7.13 (t, 11H), 7.65 (s, 12H)
IR(純(neat),cm-1):3650~3200(νOH)、3300~3200(νNH)、1120~1050(ν矽-(烷氧基)) IR (neat, cm -1 ): 3650~3200(ν OH ), 3300~3200(ν NH ), 1120~1050(ν 矽-(alkoxy) )
藉由以1:9之體積比率混合水及甲醇以得到溶劑混合物,將溶劑混合物與在實例1中製備的化合物1混合,以製備具有1.0重量%之化合物1的混合溶液。 A solvent mixture was mixed with Compound 1 prepared in Example 1 by mixing water and methanol in a volume ratio of 1:9 to prepare a mixed solution having 1.0% by weight of Compound 1.
在實例2中製備的混合溶液單獨靜置60分鐘以進行水解,然後噴灑在小節、阻熱層及防鏽層依序形成於上的滾製(rolled)銅箔(IL-2,由Iljin製造)上。接著,使用塗抹器(applicator)(C.K貿易公司,模型名:CKAF1003)塗覆滾製銅箔,從而製備經塗覆之銅箔。滾製銅箔上的小節、阻熱層及防鏽層分別由銅(Cu)、鋅合金及鉻所形成。在烤箱中於120℃乾燥30分鐘經塗覆之銅箔。 The mixed solution prepared in Example 2 was allowed to stand alone for 60 minutes to carry out hydrolysis, and then sprayed on a rolled copper foil (IL-2, manufactured by Iljin) which was sequentially formed on the measure, the heat-resistant layer and the rust-preventing layer. )on. Next, a rolled copper foil was coated using an applicator (C.K Trading Co., model name: CKAF1003) to prepare a coated copper foil. The bars, the heat-resistant layer and the rust-proof layer on the rolled copper foil are respectively formed of copper (Cu), a zinc alloy and chromium. The coated copper foil was dried in an oven at 120 ° C for 30 minutes.
以KRICT-PAA亮光漆(BPDA:PMDA:PDA:ODA=3:7:6:4)噴灑使用表面處理劑組成物處理的銅箔,並使用刮刀(doctor blade)塗覆之。在氮環境下於60℃進行30分鐘、120℃進行30分鐘、250℃進行30分鐘以及400℃進行10分鐘來硬化經塗覆之聚醯胺酸,以製備聚醯亞胺薄膜,因此,製備經聚醯亞胺薄膜塗覆於上的銅箔。在實例3中製備的銅箔以下稱為樣品1。 The copper foil treated with the surface treatment composition was sprayed with a KRICT-PAA varnish (BPDA: PMDA: PDA: ODA = 3:7:6:4) and coated with a doctor blade. The coated polylysine is cured by performing 30 minutes at 60 ° C, 30 minutes at 120 ° C, 30 minutes at 250 ° C, and 10 minutes at 400 ° C in a nitrogen atmosphere to prepare a polyimide film, thereby preparing A copper foil coated with a polyimide film. The copper foil prepared in Example 3 is hereinafter referred to as Sample 1.
以在實例3中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了使用由Jooyoung產業有限公司製造的亮光漆(產品名:JY-001)取代KRICT-PAA亮光漆。在實例4中製備的銅箔以下稱為樣品2。 A copper foil coated with a polyimide film was prepared in the same manner as in Example 3 except that a varnish (product name: JY-001) manufactured by Jooyoung Industries Co., Ltd. was used in place of the KRICT-PAA varnish. The copper foil prepared in Example 4 is hereinafter referred to as Sample 2.
以在實例3中同樣的方式製備經聚醯亞胺薄膜塗覆 於上的銅箔,除了使用由Nikko材料製造的滾製銅箔(產品名:BHY-22B-T)取代滾製銅箔(IL-2,由Iljin製造),且由UBE有限公司製造的Upilex形式之亮光漆取代KRICT-PAA亮光漆。在實例5中製備的銅箔以下稱為樣品3。 Preparation of a polyimide film coated in the same manner as in Example 3. The copper foil on the top was replaced with a rolled copper foil (product name: BHY-22B-T) made of Nikko material instead of a rolled copper foil (IL-2, manufactured by Iljin), and Upilex manufactured by UBE Co., Ltd. The form of varnish replaces the KRICT-PAA varnish. The copper foil prepared in Example 5 is hereinafter referred to as Sample 3.
以在實例3中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了省略使用表面處理劑組成物來處理銅箔表面的步驟。在比較性實例1中製備的銅箔以下稱為比較性樣品1。 A copper foil coated with a polyimide film was prepared in the same manner as in Example 3 except that the step of treating the surface of the copper foil using the surface treatment composition was omitted. The copper foil prepared in Comparative Example 1 is hereinafter referred to as Comparative Sample 1.
以在實例4中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了省略使用表面處理劑組成物來處理銅箔表面的步驟。在比較性實例2中製備的銅箔以下稱為比較性樣品2。 A copper foil coated with a polyimide film was prepared in the same manner as in Example 4 except that the step of treating the surface of the copper foil using the surface treatment composition was omitted. The copper foil prepared in Comparative Example 2 is hereinafter referred to as Comparative Sample 2.
以在實例5中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了省略使用表面處理劑組成物來處理銅箔表面的步驟。在比較性實例3中製備的銅箔以下稱為比較性樣品3。 A copper foil coated with a polyimide film was prepared in the same manner as in Example 5 except that the step of treating the surface of the copper foil using the surface treatment composition was omitted. The copper foil prepared in Comparative Example 3 is hereinafter referred to as Comparative Sample 3.
使用ASTM D-638指定的方法量測樣品1至3及比較性樣品1至3的剝離強度。橫擔速度(cross-Head speed)為25 mm/min且樣品的寬度為5 mm。使用Instron 8516進行量測。量測的結果如下面的表1所示。 The peel strengths of Samples 1 to 3 and Comparative Samples 1 to 3 were measured using the method specified in ASTM D-638. The cross-head speed is 25 mm/min and the width of the sample is 5 mm. Measurements were performed using an Instron 8516. The results of the measurements are shown in Table 1 below.
如表1所示,根據本發明之實施例,相比於沒有使用表面處理劑組成物製備之比較性樣品1至3,使用包含矽烷基化合物之表面處理劑組成物製備之樣品1至3於聚醯亞胺薄膜及銅箔之間顯示大幅增加的剝離強度。 As shown in Table 1, according to the examples of the present invention, Samples 1 to 3 prepared using the surface treatment composition containing a decyl compound were compared to Comparative Samples 1 to 3 prepared without using the surface treatment composition. A large increase in peel strength is exhibited between the polyimide film and the copper foil.
於50℃、相對濕度80%在恆溫溼器(thermo-hygrostat)HIRAYANA PC-R7中儲存樣品1至3進行7天,樣品1至3的變色(discoloration)明顯。7天後,樣品1至3的顏色沒 有改變。 Samples 1 to 3 were stored in a thermo-hygrostat HIRAYANA PC-R7 at 50 ° C and a relative humidity of 80% for 7 days, and discoloration of samples 1 to 3 was remarkable. After 7 days, the colors of samples 1 to 3 were not There are changes.
根據下面的反應機制2合成由式2表示的化合物2A。 The compound 2A represented by Formula 2 was synthesized according to the following Reaction Mechanism 2.
其中R為甲基。 Wherein R is a methyl group.
將125.712克的四氫呋喃、8.9645克(0.05莫耳)的3-氨基丙基三甲氧基矽烷(3-aminopropyltrimethoxysilane)及5.0035克(0.05莫耳)的琥珀酸酐(succinic anhydride)倒入反應器中並反應6小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以300 rpm旋轉。在完成反應之後,使用旋轉蒸發器2小時以從生成物移除溶劑。然後,在真空烤箱中乾燥生成物24小時,從而得到13.9克(產率99%)由式2表示的化合物2A。 125.712 grams of tetrahydrofuran, 8.9645 grams (0.05 moles) of 3-aminopropyltrimethoxysilane and 5.035 grams (0.05 moles) of succinic anhydride were poured into the reactor and reacted. The reactor temperature was maintained at -5 ° C to 5 ° C under nitrogen for 6 hours and the mechanical stirrer was rotated at 300 rpm. After the reaction was completed, a rotary evaporator was used for 2 hours to remove the solvent from the product. Then, the resultant was dried in a vacuum oven for 24 hours to obtain 13.9 g (yield: 99%) of Compound 2A represented by Formula 2.
1H NMR(300 MHz):δ 0.53~0.58(m,1H)、1.42~1.45(m,2H)、2.29~2.31(d,4H)、2.38~2.43(m,5H)、2.98~3.00(m,3H)、3.40~3.46(m,SiOCH3)、8.00(s,-NH-)、12.00(s,-OH) 1 H NMR (300 MHz): δ 0.53~0.58 (m, 1H), 1.42~1.45 (m, 2H), 2.29~2.31 (d, 4H), 2.38~2.43 (m, 5H), 2.98~3.00 (m) , 3H), 3.40~3.46 (m, SiOCH 3 ), 8.00 (s, -NH-), 12.00 (s, -OH)
IR(純,cm-1):3650~3200(νOH)、3300~3200(νNH)、 1650(νCONH)、1120~1050(ν矽-(烷氧基)) IR (pure, cm -1 ): 3650~3200(ν OH ), 3300~3200(ν NH ), 1650(ν CONH ), 1120~1050(ν 矽-(alkoxy) )
根據下面的反應機制2合成由式2表示的化合物2B。 The compound 2B represented by Formula 2 was synthesized according to the following Reaction Mechanism 2.
其中R為乙基。 Wherein R is an ethyl group.
將125.712克的四氫呋喃、11.0685克(0.05莫耳)的3-氨基丙基三乙氧基矽烷(3-aminopropyltriethoxysilane)及5.0035克(0.05莫耳)的琥珀酸酐倒入反應器中並反應6小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以300 rpm旋轉。在完成反應之後,使用旋轉蒸發器2小時從生成物移除溶劑。然後,在真空烤箱中乾燥生成物24小時,從而得到16克(產率99%)由式2表示的化合物2B。 125.712 g of tetrahydrofuran, 11.08685 g (0.05 mol) of 3-aminopropyltriethoxysilane and 5.035 g (0.05 mol) of succinic anhydride were poured into the reactor and reacted for 6 hours. The temperature of the reactor was maintained at -5 ° C to 5 ° C under a nitrogen atmosphere, and the mechanical stirrer was rotated at 300 rpm. After the reaction was completed, the solvent was removed from the product using a rotary evaporator for 2 hours. Then, the resultant was dried in a vacuum oven for 24 hours, thereby obtaining 16 g (yield 99%) of Compound 2B represented by Formula 2.
1H NMR(300 MHz):δ0.58~0.60(m,1H)、1.22~1.25(m,Si-CH2)、1.60~1.63(m,2H)、2.45~2.49(m,4H)、2.51~2.54(m,5H)、3.20~3.25(m,3H)、3.83~3.87(m,Si-CH3) 1 H NMR (300 MHz): δ 0.58~0.60 (m, 1H), 1.22~1.25 (m, Si-CH 2 ), 1.60~1.63 (m, 2H), 2.45~2.49 (m, 4H), 2.51 ~2.54(m,5H), 3.20~3.25(m,3H),3.83~3.87(m,Si-CH 3 )
IR(純,cm-1):3650~3200(νOH)、3300~3200(νNH)、 1650(νCONH)、1120~1050(ν矽-(烷氧基)) IR (pure, cm -1 ): 3650~3200(ν OH ), 3300~3200(ν NH ), 1650(ν CONH ), 1120~1050(ν 矽-(alkoxy) )
藉由以1:9之體積比率混合水及甲醇以得到溶劑混合物,將溶劑混合物與在實例6A中製備的化合物2A混合,以製備分別具有0.5重量%、1重量%、2重量%、3重量%及5重量%之化合物2A的混合溶液。 The solvent mixture was mixed with the compound 2A prepared in Example 6A by mixing water and methanol in a volume ratio of 1:9 to prepare 0.5% by weight, 1% by weight, 2% by weight, and 3 parts by weight, respectively. A mixed solution of % and 5% by weight of Compound 2A.
藉由以1:9之體積比率混合水及甲醇以得到溶劑混合物,將溶劑混合物與在實例6B中製備的化合物2B混合,以製備分別具有0.5重量%、1重量%、2重量%、3重量%及5重量%之化合物2B的混合溶液。 The solvent mixture was mixed with the compound 2B prepared in Example 6B by mixing water and methanol in a volume ratio of 1:9 to prepare 0.5% by weight, 1% by weight, 2% by weight, and 3 parts by weight, respectively. A mixed solution of % and 5% by weight of Compound 2B.
在實例7至16中製備的混合溶液單獨靜置60分鐘以進行水解,然後分別噴灑在經Cr塗覆之滾製銅箔(IL-2,由Iljin製造)上。接著,使用塗抹器塗覆滾製銅箔,從而得到經塗覆之銅箔。在烤箱中於120℃乾燥30分鐘經塗覆之銅箔。 The mixed solutions prepared in Examples 7 to 16 were allowed to stand alone for 60 minutes for hydrolysis, and then sprayed on a Cr-coated rolled copper foil (IL-2, manufactured by Iljin), respectively. Next, the rolled copper foil was coated with an applicator to obtain a coated copper foil. The coated copper foil was dried in an oven at 120 ° C for 30 minutes.
以由Jooyoung產業有限公司(產品名:JY-001)製造的亮光漆噴灑使用表面處理劑組成物處理的銅箔,並使用刮 刀塗覆之。 Spray copper foil treated with a surface treatment agent composition with a varnish manufactured by Jooyoung Industries Co., Ltd. (product name: JY-001), and use a scraping Knife coated.
在氮環境下於60℃進行30分鐘、120℃進行30分鐘、250℃進行30分鐘以及400℃進行10分鐘來硬化經塗覆之聚醯胺酸,以製備聚醯亞胺薄膜,因此,製備經聚醯亞胺薄膜分別塗覆於上的銅箔。在實例17至26中製備的銅箔以下稱為樣品4至13。 The coated polylysine is cured by performing 30 minutes at 60 ° C, 30 minutes at 120 ° C, 30 minutes at 250 ° C, and 10 minutes at 400 ° C in a nitrogen atmosphere to prepare a polyimide film, thereby preparing The polyimide film is applied to the upper copper foil by a polyimide film. The copper foils prepared in Examples 17 to 26 are hereinafter referred to as Samples 4 to 13.
以在實例17中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了省略使用表面處理劑組成物來處理銅箔表面的步驟。在比較性實例4中製備的銅箔以下稱為比較性樣品4。 A copper foil coated with a polyimide film was prepared in the same manner as in Example 17, except that the step of treating the surface of the copper foil using the surface treatment composition was omitted. The copper foil prepared in Comparative Example 4 is hereinafter referred to as Comparative Sample 4.
使用ASTM D-638指定的方法量測樣品4至13及比較性樣品4的剝離強度。橫擔速度為25 mm/min且樣品的寬度為5 mm。使用Instron 8516進行量測。量測的結果如下面的表2所示。 The peel strengths of Samples 4 to 13 and Comparative Sample 4 were measured using the method specified in ASTM D-638. The cross-arm speed was 25 mm/min and the width of the sample was 5 mm. Measurements were performed using an Instron 8516. The results of the measurements are shown in Table 2 below.
如表2所示,根據本發明之實施例,相比於沒有使用表面處理劑組成物製備之比較性樣品4,使用包含矽烷基化合物之表面處理劑組成物製備之樣品4至13於聚醯亞胺薄膜及銅箔之間顯示大幅增加的剝離強度。 As shown in Table 2, samples 4 to 13 prepared using a surface treatment composition containing a decyl compound were compared to Comparative Sample 4 prepared without using a surface treatment composition according to an embodiment of the present invention. The imide film and the copper foil showed a greatly increased peel strength.
於50℃、相對濕度80%在恆溫溼器HIRAYANA PC-R7中儲存樣品4至13進行7天,樣品4至13的變色明顯。7天後,樣品4至13的顏色沒有改變。 Samples 4 to 13 were stored in a thermostat humidifier HIRAYANA PC-R7 at 50 ° C and a relative humidity of 80% for 7 days, and the discoloration of samples 4 to 13 was remarkable. After 7 days, the colors of samples 4 to 13 did not change.
根據下面的反應機制3合成由式3表示的化合物3。 Compound 3 represented by Formula 3 was synthesized according to the following Reaction Mechanism 3.
<反應機制3>
將125.712克的四氫呋喃、8.9645克(0.05莫耳)的3-氨基丙基三甲氧基矽烷及7.4550克(0.05莫耳)的2,3-吡啶二酸酐(2,3-pyridinedicarboxylic anhydride)倒入反應器中並反應5小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以300 rpm旋轉。在完成反應之後,使用旋轉蒸發器2小時以從生成物移除溶劑。然後,在真空烤箱中乾燥生成物24小時,從而得到16.4克(產率99%)由式3表示的化合物3。 125.712 grams of tetrahydrofuran, 8.9645 grams (0.05 moles) of 3-aminopropyltrimethoxynonane and 7.4550 grams (0.05 moles) of 2,3-pyridinedicarboxylic anhydride were poured into the reaction. The reaction was carried out for 5 hours, the temperature of the reactor was maintained at -5 ° C to 5 ° C under a nitrogen atmosphere, and the mechanical stirrer was rotated at 300 rpm. After the reaction was completed, a rotary evaporator was used for 2 hours to remove the solvent from the product. Then, the resultant was dried in a vacuum oven for 24 hours, whereby 16.4 g (yield 99%) of Compound 3 represented by Formula 3 was obtained.
1H NMR(300 MHz):δ0.57~0.59(t,1H)、1.62~1.80(m,2H)、3.62~3.67(m,Si-CH3)、3.85~3.87(t,3H)、7.93~7.95(t,4H)、8.56(s,NH)、8.64~8.67(d,5H)、9.09~9.11(d,6H)、13.80(s,OH) 1 H NMR (300 MHz): δ 0.57~0.59 (t, 1H), 1.62~1.80 (m, 2H), 3.62~3.67 (m, Si-CH 3 ), 3.85~3.87 (t, 3H), 7.93 ~7.95(t,4H), 8.56(s,NH), 8.64~8.67(d,5H), 9.09~9.11(d,6H), 13.80(s,OH)
IR(純,cm-1):3650~3200(νOH)、3300~3200(νNH)、1650(νCONH)、1120~1050(ν矽-(烷氧基)) IR (pure, cm -1 ): 3650~3200(ν OH ), 3300~3200(ν NH ), 1650(ν CONH ), 1120~1050(ν 矽-(alkoxy) )
藉由以1:9之體積比率混合水及甲醇以得到溶劑混合物,將溶劑混合物與在實例27中製備的化合物3混合,以製備分別具有0.5重量%及1重量%之化合物3的混合溶液。 The solvent mixture was mixed with the compound 3 prepared in Example 27 by mixing water and methanol in a volume ratio of 1:9 to prepare a mixed solution of Compound 3 having 0.5% by weight and 1% by weight, respectively.
在實例28至29中製備的混合溶液單獨靜置60分鐘以進行水解,然後分別噴灑在經Cr塗覆之滾製銅箔(IL-2,由Iljin製造)上。接著,使用塗抹器塗覆銅箔,從而製備經塗覆之銅箔。在烤箱中於120℃乾燥30分鐘經塗覆之銅箔。 The mixed solutions prepared in Examples 28 to 29 were separately allowed to stand for 60 minutes for hydrolysis, and then sprayed on a Cr-coated rolled copper foil (IL-2, manufactured by Iljin), respectively. Next, the copper foil was coated with an applicator to prepare a coated copper foil. The coated copper foil was dried in an oven at 120 ° C for 30 minutes.
以由UBE有限公司製造的Upilex形式之亮光漆(產品名:U-亮光漆-S)噴灑使用表面處理劑組成物處理的銅箔,並使用刮刀塗覆之。 A copper foil treated with a surface treatment composition was sprayed with a varnish of the Upilex form manufactured by UBE Co., Ltd. (product name: U-varnish-S), and coated with a doctor blade.
在氮環境下於60℃進行30分鐘、120℃進行30分鐘、250℃進行30分鐘以及400℃進行10分鐘來硬化經塗覆之聚醯胺酸,以製備聚醯亞胺薄膜,因此,製備經聚醯亞胺薄膜分別塗覆於上的銅箔。在實例30至31中製備的銅箔以下稱為樣品14至15。 The coated polylysine is cured by performing 30 minutes at 60 ° C, 30 minutes at 120 ° C, 30 minutes at 250 ° C, and 10 minutes at 400 ° C in a nitrogen atmosphere to prepare a polyimide film, thereby preparing The polyimide film is applied to the upper copper foil by a polyimide film. The copper foils prepared in Examples 30 to 31 are hereinafter referred to as Samples 14 to 15.
以在實例30中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了省略使用表面處理劑組成物來處理銅箔 表面的步驟。在比較性實例5中製備的銅箔以下稱為比較性樣品5。 A copper foil coated with a polyimide film was prepared in the same manner as in Example 30 except that the surface treatment composition was omitted to treat the copper foil. Surface steps. The copper foil prepared in Comparative Example 5 is hereinafter referred to as Comparative Sample 5.
使用ASTM D-638指定的方法量測樣品14至15及比較性樣品5的剝離強度。橫擔速度為25 mm/min且樣品的寬度為5 mm。使用Instron 8516進行量測。量測的結果如下面的表3所示。 The peel strengths of samples 14 to 15 and comparative sample 5 were measured using the method specified by ASTM D-638. The cross-arm speed was 25 mm/min and the width of the sample was 5 mm. Measurements were performed using an Instron 8516. The results of the measurements are shown in Table 3 below.
如表3所示,根據本發明之實施例,相比於沒有使用表面處理劑組成物製備之比較性樣品5,使用包含矽烷基化合物之表面處理劑組成物製備之樣品14至15於聚醯亞胺薄膜及銅箔之間具有大幅增加的剝離強度。 As shown in Table 3, samples 14 to 15 prepared using a surface treatment composition containing a decyl compound were compared to Comparative Sample 5 prepared without using a surface treatment composition, according to an embodiment of the present invention. The imide film and the copper foil have a greatly increased peel strength.
於50℃、相對濕度80%在恆溫溼器HIRAYANA PC-R7中儲存樣品14至15進行7天,樣品14至15的變色明顯。7天後,樣品14至15的顏色沒有改變。 Samples 14 to 15 were stored in a thermostat humidifier HIRAYANA PC-R7 at 50 ° C and a relative humidity of 80% for 7 days, and the discoloration of the samples 14 to 15 was remarkable. After 7 days, the colors of samples 14 to 15 did not change.
根據下面的反應機制4合成由式4表示的化合物4A。 Compound 4A represented by Formula 4 was synthesized according to the following reaction mechanism 4.
其中R為甲基。 Wherein R is a methyl group.
將125.712克的四氫呋喃、8.9645克(0.05莫耳)的3-氨基丙基三甲氧基矽烷及9.6065克(0.05莫耳)的偏苯三酸酐(1,2,4-benzenetricarboxylic anhydride)(2,3-吡啶二酸酐)倒入反應器中並反應6小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以250 rpm旋轉。在完成反應之後,使用旋轉蒸發器1小時以從生成物移除溶劑。然後,在真空烤箱中乾燥生成物48小時,從而得到18.5克(產率99%)由式4表示的化合物4A。 125.712 grams of tetrahydrofuran, 8.9645 grams (0.05 moles) of 3-aminopropyltrimethoxynonane and 9.6065 grams (0.05 moles) of trimellitic anhydride (1,2,4-benzenetricarboxylic anhydride) (2,3-pyridine II) The anhydride was poured into the reactor and reacted for 6 hours, the temperature of the reactor was maintained at -5 ° C to 5 ° C under a nitrogen atmosphere, and the mechanical stirrer was rotated at 250 rpm. After the reaction was completed, a rotary evaporator was used for 1 hour to remove the solvent from the product. Then, the resultant was dried in a vacuum oven for 48 hours, whereby 18.5 g (yield 99%) of Compound 4A represented by Formula 4 was obtained.
1H NMR(300 MHz):δ0.62~0.65(t,1H)、1.71~1.76(m,2H)、3.41~3.47(m,Si-CH3)、3.56~3.60(m,3H)、7.45(s,NH) 1 H NMR (300 MHz): δ 0.62~0.65 (t, 1H), 1.71~1.76 (m, 2H), 3.41~3.47 (m, Si-CH 3 ), 3.56~3.60 (m, 3H), 7.45 (s, NH)
IR(純,cm-1):3650~3200(νOH)、3300~3200(νNH)、1650(νCONH)、1120~1050(ν矽-(烷氧基)) IR (pure, cm -1 ): 3650~3200(ν OH ), 3300~3200(ν NH ), 1650(ν CONH ), 1120~1050(ν 矽-(alkoxy) )
根據下面的反應機制4合成由式4表示的化合物4B。 The compound 4B represented by Formula 4 was synthesized according to the following reaction mechanism 4.
其中R為乙基。 Wherein R is an ethyl group.
將125.712克的四氫呋喃、8.9645克(0.05莫耳)的3-氨基丙基三乙氧基矽烷及9.6065克(0.05莫耳)的偏苯三酸酐(1,2,4-benzenetricarboxylic anhydride)(2,3-吡啶二酸酐)倒入反應器中並反應6小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以250 rpm旋轉。在完成反應之後,使用旋轉蒸發器1小時以從生成物移除溶劑。然後,在真空烤箱中乾燥生成物48小時,從而得到20.6克(產率99%)由式4表示的化合物4B。 125.712 grams of tetrahydrofuran, 8.9645 grams (0.05 moles) of 3-aminopropyltriethoxynonane and 9.6065 grams (0.05 moles) of trimellitic anhydride (1,2,4-benzenetricarboxylic anhydride) (2,3-pyridine) The dianhydride was poured into the reactor and reacted for 6 hours, the temperature of the reactor was maintained at -5 ° C to 5 ° C under a nitrogen atmosphere, and the mechanical stirrer was rotated at 250 rpm. After the reaction was completed, a rotary evaporator was used for 1 hour to remove the solvent from the product. Then, the resultant was dried in a vacuum oven for 48 hours, whereby 20.6 g (yield 99%) of Compound 4B represented by Formula 4 was obtained.
1H NMR(300 MHz,CD3OD):δ0.71~0.73(t,1H)、1.14~1.23(m,Si-CH3)、1.71~1.74(m,2H)、3.58~3.60(t,3H)、3.79~3.86(m,Si-CH2)、8.55(s,NH) 1 H NMR (300 MHz, CD 3 OD): δ 0.71~0.73 (t, 1H), 1.14~1.23 (m, Si-CH3), 1.71~1.74 (m, 2H), 3.58~3.60 (t, 3H) ), 3.79~3.86 (m, Si-CH 2 ), 8.55 (s, NH)
IR(純,cm-1):3650~3200(νOH)、3300~3200(νNH)、1650(νCONH)、1120~1050(ν矽-(烷氧基)) IR (pure, cm -1 ): 3650~3200(ν OH ), 3300~3200(ν NH ), 1650(ν CONH ), 1120~1050(ν 矽-(alkoxy) )
藉由以1:9之體積比率混合水及甲醇以得到溶劑混合物,將溶劑混合物與在實例32A中製備的化合物4A混合,以製備分別具有0.5重量%及1重量%之化合物4A的混合溶液。 The solvent mixture was mixed with the compound 4A prepared in Example 32A by mixing water and methanol in a volume ratio of 1:9 to prepare a mixed solution of Compound 4A having 0.5% by weight and 1% by weight, respectively.
藉由以1:9之體積比率混合水及甲醇以得到溶劑混合物,將溶劑混合物與在實例32B中製備的化合物4B混合,以製備分別具有0.5重量%及1重量%之化合物4B的混合溶液。 The solvent mixture was mixed with the compound 4B prepared in Example 32B by mixing water and methanol in a volume ratio of 1:9 to prepare a mixed solution of compound 4B each having 0.5% by weight and 1% by weight.
在實例33至36中製備的混合溶液單獨靜置60分鐘以進行水解,然後分別噴灑在經Cr塗覆之滾製銅箔(IL-2,由Iljin製造)上。接著,使用塗抹器塗覆銅箔,從而製備經塗覆之銅箔。在烤箱中於120℃乾燥30分鐘經塗覆之銅箔。 The mixed solutions prepared in Examples 33 to 36 were separately allowed to stand for 60 minutes for hydrolysis, and then sprayed on a Cr-coated rolled copper foil (IL-2, manufactured by Iljin), respectively. Next, the copper foil was coated with an applicator to prepare a coated copper foil. The coated copper foil was dried in an oven at 120 ° C for 30 minutes.
以由Jooyoung有限公司製造的亮光漆(產品名:JY-001)噴灑使用表面處理劑組成物處理的銅箔,並使用刮刀塗覆之。 A copper foil treated with a surface treatment composition was sprayed with a varnish (product name: JY-001) manufactured by Jooyoung Co., Ltd., and coated with a doctor blade.
在氮環境下於60℃進行30分鐘、120℃進行30分鐘、250℃進行30分鐘以及400℃進行10分鐘來硬化經塗 覆之聚醯胺酸,以製備聚醯亞胺薄膜,因此,製備經聚醯亞胺薄膜分別塗覆於上的銅箔。在實例37至40中製備的銅箔以下稱為樣品16至19。 Hardening was carried out in a nitrogen atmosphere at 60 ° C for 30 minutes, at 120 ° C for 30 minutes, at 250 ° C for 30 minutes, and at 400 ° C for 10 minutes. The polyaminic acid was coated to prepare a polyimide film, and thus, a copper foil coated with a polyimide film separately was prepared. The copper foils prepared in Examples 37 to 40 are hereinafter referred to as Samples 16 to 19.
以在實例37中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了省略使用表面處理劑組成物來處理銅箔表面的步驟。在比較性實例6中製備的銅箔以下稱為比較性樣品6。 A copper foil coated with a polyimide film was prepared in the same manner as in Example 37 except that the step of treating the surface of the copper foil using the surface treatment composition was omitted. The copper foil prepared in Comparative Example 6 is hereinafter referred to as Comparative Sample 6.
使用ASTM D-638指定的方法量測樣品16至19及比較性樣品6的剝離強度。橫擔速度為25 mm/min且樣品的寬度為5 mm。使用Instron 8516進行量測。量測的結果如下面的表4所示。 The peel strengths of samples 16 to 19 and comparative sample 6 were measured using the method specified by ASTM D-638. The cross-arm speed was 25 mm/min and the width of the sample was 5 mm. Measurements were performed using an Instron 8516. The results of the measurements are shown in Table 4 below.
如表4所示,根據本發明之實施例,相比於沒有使用表面處理劑組成物製備之比較性樣品6,使用包含矽烷基化合物之表面處理劑組成物製備之樣品16至19於聚醯亞胺薄膜及銅箔之間具有大幅增加的剝離強度。 As shown in Table 4, samples 16 to 19 prepared using the surface treatment composition containing a decyl compound were compared to the comparative sample 6 prepared without using the surface treatment composition, according to the embodiment of the present invention. The imide film and the copper foil have a greatly increased peel strength.
於50℃、相對濕度80%在恆溫溼器HIRAYANA PC-R7中儲存樣品16至19進行7天,樣品16至19的變色明顯。7天後,樣品16至19的顏色沒有改變。 Samples 16 to 19 were stored in a thermostat humidifier HIRAYANA PC-R7 at 50 ° C and a relative humidity of 80% for 7 days, and the discoloration of the samples 16 to 19 was remarkable. After 7 days, the colors of samples 16 to 19 did not change.
以在實例37中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了使用PMDA/ODA亮光漆、BTDA/PDA亮光漆、BTDA/PMDA/ODA/PDA亮光漆及PMDA/ODA-SD亮光漆分別取代由Jooyoung有限公司製造的亮光漆(產品名:JY-001)。此處,使用0.5重量%之化合物4B為表面處理劑。在實例41至44中製備的銅箔以下稱為樣品20至23。 A copper foil coated with a polyimide film was prepared in the same manner as in Example 37 except that PMDA/ODA varnish, BTDA/PDA varnish, BTDA/PMDA/ODA/PDA varnish, and PMDA/ODA were used. -SD varnish replaces the varnish (product name: JY-001) manufactured by Jooyoung Co., Ltd., respectively. Here, 0.5% by weight of the compound 4B was used as a surface treatment agent. The copper foils prepared in Examples 41 to 44 are hereinafter referred to as Samples 20 to 23.
以上描述的亮光漆是由以下描述的方法製造 The varnish described above is manufactured by the method described below
將255.000克的N,N-二甲基乙醯胺(DMAc; N,N-dimethylacetamide)、21.538克(0.107563莫耳)的4,4'-二氨基二苯醚及23.462克(0.107563莫耳)的苯均四酸二酐依序倒入反應器中並反應24小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以350 rpm旋轉。然後,從而製備包含15重量%之聚醯胺酸的亮光漆。 255.000 grams of N,N-dimethylacetamide (DMAc; N,N-dimethylacetamide), 21.538 g (0.107563 mol) of 4,4'-diaminodiphenyl ether and 23.462 g (0.107563 mol) of pyromellitic dianhydride were sequentially poured into the reactor and reacted 24 The reactor was maintained at a temperature of -5 ° C to 5 ° C under a nitrogen atmosphere and the mechanical stirrer was rotated at 350 rpm. Then, a varnish containing 15% by weight of polyamic acid was prepared.
將255.000克的DMAc(N,N-二甲基乙醯胺)、11.307克(0.104561莫耳)的間苯二胺及33.693克(0.104561莫耳)的3,3',4,4'-二苯酮四甲酸二酐(3,3’,4,4’-benzophenone tetracarboxylic dianhydride)倒入反應器中並反應24小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以350 rpm旋轉。然後,從而製備包含15重量%之聚醯胺酸的亮光漆。 255.000 grams of DMAc (N,N-dimethylacetamide), 11.307 grams (0.104561 moles) of m-phenylenediamine and 33.693 grams (0.104561 moles) of 3,3',4,4'-two Phenolone tetracarboxylic dianhydride (3,3',4,4'-benzophenone tetracarboxylic dianhydride) was poured into the reactor and reacted for 24 hours, maintaining the temperature of the reactor under a nitrogen atmosphere of -5 ° C to 5 ° C, and mechanical The agitator was rotated at 350 rpm. Then, a varnish containing 15% by weight of polyamic acid was prepared.
將255克的DMAc、6.334克(0.031633莫耳)的4,4'-二氨基二苯醚及7.982克(0.073811莫耳)的間苯二胺倒入反應器中並完全溶解。然後,將23.784克(0.073811莫耳)的3,3',4,4'-二苯酮四甲酸二酐(3,3’,4,4’-benzophenone tetracarboxylic dianhydride)及6.900克(0.031633莫耳)的苯均四酸二酐倒入反應器中並反應24小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以350 rpm旋轉。然後,從而製備包含15重量%之聚醯胺酸的亮光漆。 255 grams of DMAc, 6.334 grams (0.031633 moles) of 4,4'-diaminodiphenyl ether, and 7.982 grams (0.073811 moles) of m-phenylenediamine were poured into the reactor and completely dissolved. Then, 23.784 g (0.073811 mol) of 3,3',4,4'-benzophenone tetracarboxylic dianhydride and 6.900 g (0.031633 mol) The pyromellitic dianhydride was poured into the reactor and reacted for 24 hours, the temperature of the reactor was maintained at -5 ° C to 5 ° C under a nitrogen atmosphere, and the mechanical stirrer was rotated at 350 rpm. Then, a varnish containing 15% by weight of polyamic acid was prepared.
將127.5克的DMAc、9.826克(0.04907莫耳)的4,4'-二氨基二苯醚及1.408克(0.002583莫耳)的SD-545倒入反應器中並完全溶解。然後,將11.267克(0.0.051653莫耳)的苯均四酸二酐倒入反應器中並反應24小時,在氮環境下維持反應器之溫度為-5℃至5℃,且機械攪拌器以350 rpm旋轉。然後,從而製備包含15重量%之聚醯胺酸的亮光漆。 127.5 grams of DMAc, 9.826 grams (0.04907 moles) of 4,4'-diaminodiphenyl ether, and 1.408 grams (0.002583 moles) of SD-545 were poured into the reactor and completely dissolved. Then, 11.267 g (0.0.051653 mol) of pyromellitic dianhydride was poured into the reactor and reacted for 24 hours, maintaining the temperature of the reactor under a nitrogen atmosphere of -5 ° C to 5 ° C, and a mechanical stirrer Rotate at 350 rpm. Then, a varnish containing 15% by weight of polyamic acid was prepared.
以在實例41至44中同樣的方式製備經聚醯亞胺薄膜塗覆於上的銅箔,除了省略使用表面處理劑組成物來處理銅箔表面的步驟。在比較性實例7至10中製備的銅箔以下稱為比較性樣品7至10。 A copper foil coated with a polyimide film was prepared in the same manner as in Examples 41 to 44 except that the step of treating the surface of the copper foil using the surface treatment composition was omitted. The copper foils prepared in Comparative Examples 7 to 10 are hereinafter referred to as Comparative Samples 7 to 10.
使用ASTM D-638指定的方法量測樣品20至23及比較性樣品7至10的剝離強度。橫擔速度為25 mm/min且樣品的寬度為5 mm。使用Instron 8516進行量測。量測的結果如下面的表5所示。 The peel strengths of samples 20 to 23 and comparative samples 7 to 10 were measured using the method specified by ASTM D-638. The cross-arm speed was 25 mm/min and the width of the sample was 5 mm. Measurements were performed using an Instron 8516. The results of the measurements are shown in Table 5 below.
如表5所示,根據本發明之實施例,相比於沒有使用表面處理劑組成物製備之比較性樣品7至10,使用包含矽烷基化合物之表面處理劑組成物製備之樣品20至23於聚醯亞胺薄膜及銅箔之間具有大幅增加的剝離強度。 As shown in Table 5, samples 20 to 23 prepared using the surface treatment composition containing a decyl compound were compared to Comparative Samples 7 to 10 prepared without using the surface treatment composition, according to an embodiment of the present invention. There is a greatly increased peel strength between the polyimide film and the copper foil.
如上所述,相比於沒有表面處理薄膜形成於上的PCB或是包含一般矽烷基化合物之表面處理薄膜形成於上的PCB,根據本發明之包含矽烷基化合物或矽烷基化合物之水解物之表面處理薄膜形成於上的PCB具有提高的剝離強度。 As described above, the surface of the hydrolyzate containing the mercaptoalkyl compound or the mercapto compound according to the present invention is compared to the PCB on which the surface treatment film is not formed or the PCB on which the surface treatment film containing the general mercapto compound is formed. The PCB on which the treatment film is formed has an improved peel strength.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
Claims (11)
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| KR1020080070081A KR101475839B1 (en) | 2008-07-18 | 2008-07-18 | Copper foil for flexible printed circuit board, method for preparing the same, and flexible copper clad laminate using polyamic acid precursor and copper foil |
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| WO2015020638A1 (en) | 2013-08-06 | 2015-02-12 | Intel Corporation | Emotion-related query processing |
| CN120988476A (en) * | 2025-10-27 | 2025-11-21 | 中石油(上海)新材料研究院有限公司 | A composition solution, a polyimide film, a preparation method thereon, and its application. |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0637902A1 (en) * | 1993-08-06 | 1995-02-08 | Gould Electronics Inc. | Metallic foil with adhesion promoting layer |
| JPH08134234A (en) * | 1994-09-16 | 1996-05-28 | Ube Ind Ltd | Modified polyimide film and laminate |
| TW200604356A (en) * | 2004-07-16 | 2006-02-01 | Iljin Copper Foil Co Ltd | Method of manufacturing surface-treated copper foil for PCB having fine-circuit pattern and surface-treated copper foil thereof |
| KR20080014555A (en) * | 2006-08-11 | 2008-02-14 | 일진소재산업주식회사 | Copper foil laminated sheet composition, copper foil containing same and manufacturing method thereof |
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| KR20010089948A (en) * | 2000-03-16 | 2001-10-17 | 안광용 | Adhesive composition for copper foil and copper-foil-clad laminate prepared by using the same |
| KR100651386B1 (en) * | 2004-10-15 | 2006-11-29 | 삼성전기주식회사 | Release method of polyimide coverlay and manufacturing method of flexible multilayer printed circuit board using the release-treated polyimide coverlay |
| JP4344714B2 (en) * | 2005-04-19 | 2009-10-14 | エルエス ケーブル リミテッド | Low-roughness copper foil having high strength and method for producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0637902A1 (en) * | 1993-08-06 | 1995-02-08 | Gould Electronics Inc. | Metallic foil with adhesion promoting layer |
| JPH08134234A (en) * | 1994-09-16 | 1996-05-28 | Ube Ind Ltd | Modified polyimide film and laminate |
| TW200604356A (en) * | 2004-07-16 | 2006-02-01 | Iljin Copper Foil Co Ltd | Method of manufacturing surface-treated copper foil for PCB having fine-circuit pattern and surface-treated copper foil thereof |
| KR20080014555A (en) * | 2006-08-11 | 2008-02-14 | 일진소재산업주식회사 | Copper foil laminated sheet composition, copper foil containing same and manufacturing method thereof |
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| KR20100009263A (en) | 2010-01-27 |
| WO2010008214A2 (en) | 2010-01-21 |
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| KR101475839B1 (en) | 2014-12-23 |
| TW201009119A (en) | 2010-03-01 |
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