TWI388126B - Clock integrated circuit - Google Patents
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Description
本發明係關於具有時鐘電路之積體電路,其可容忍諸如溫度、接地雜訊、電源雜訊等變異。The present invention relates to an integrated circuit having a clock circuit that can tolerate variations such as temperature, ground noise, power supply noise, and the like.
積體電路之時鐘電路之運作會隨溫度、接地雜訊、電源雜訊等因子而有變異。由於這些變異會影響輸出時鐘訊號的最終時序,已有多項研究進行期能針對此一問題,在上述變異存在的情況下,產生較均勻的輸出時鐘訊號。The operation of the clock circuit of the integrated circuit varies with factors such as temperature, ground noise, and power noise. Since these variations affect the final timing of the output clock signal, a number of studies have been conducted to address this problem, resulting in a more uniform output clock signal in the presence of the above variations.
舉例而言,Gaboury之美國專利第7,142,005號利用增加具有主動負載之緩衝電路、獨立偏壓電路系統、以及偏壓電路系統之方式,來隔離電源波動對時鐘訊號的影響。為了達成隔離電源波動對時鐘訊號的影響,這些相對複雜的緩衝電路造成晶粒面積與成本之大幅增加。For example, U.S. Patent No. 7,142,005 to Gabory uses the addition of active load snubber circuits, independent bias circuitry, and bias circuitry to isolate the effects of power fluctuations on the clock signal. In order to achieve the impact of isolated power fluctuations on the clock signal, these relatively complex snubber circuits result in a significant increase in die area and cost.
因此產生需求,希望能夠解決這些變異問題,但採用較不複雜的結構與較少的成本Therefore, there is a demand, and it is hoped that these variability problems can be solved, but with less complicated structure and less cost.
本發明係提供一種具有時鐘積體電路的裝置之技術。The present invention provides a technique of a device having a clocked integrated circuit.
此時鐘積體電路具有一栓鎖器,產生該時鐘積體電路的一時鐘信號輸出。該栓鎖器包含交互耦接的邏輯閘,如此該栓鎖器中的該交互耦接的邏輯閘之輸出與該栓鎖器中的該交互耦接的不同邏輯閘之輸入耦接。The clock integrated circuit has a latch that generates a clock signal output of the clock integrated circuit. The latch includes an interactively coupled logic gate such that an output of the alternately coupled logic gate in the latch is coupled to an input of the alternately coupled logic gate in the latch.
此時鐘積體電路也具有一時序電路與該栓鎖器的一輸出耦接,該時序電路的一輸出在一第一參考信號與一第二參考信號之間切換,該切換的一速率係由一與溫度相關的時間常數來決定。該時序電路之該輸出決定該時鐘信號輸出的時序。The clock integrated circuit also has a timing circuit coupled to an output of the latch, an output of the sequential circuit switching between a first reference signal and a second reference signal, the rate of the switching being A temperature dependent time constant is determined. The output of the timing circuit determines the timing of the output of the clock signal.
此時鐘積體電路也具有一反相電路,比較該時序電路之一輸出與一溫度補償參考值,如此該時鐘積體電路之該時鐘信號輸出的該時序可以抵擋溫度變動,該反相電路的一輸出與該栓鎖器的一輸入耦接。The clock integrated circuit also has an inverting circuit that compares one of the output of the sequential circuit with a temperature compensation reference value, such that the timing of the clock signal output of the clock integrated circuit can withstand temperature fluctuations, and the inverting circuit An output is coupled to an input of the latch.
在某些實施例中,該時間常數是一指數信號。In some embodiments, the time constant is an exponential signal.
在某些實施例中,該第一參考信號是一第一參考電壓,該第二參考信號是一第二參考電壓,且該時序電路在自該第一參考電壓充電至該第二參考電壓的狀態與自該第二參考電壓放電至該第一參考電壓的狀態之間切換。In some embodiments, the first reference signal is a first reference voltage, the second reference signal is a second reference voltage, and the timing circuit is charged from the first reference voltage to the second reference voltage The state is switched between a state in which the second reference voltage is discharged to the first reference voltage.
在某些實施例中,該第一參考信號是一第一參考電壓,該第二參考信號是一第二參考電壓,且該時序電路,回應至該反相電路,在自該第一參考電壓充電至該第二參考電壓的狀態與自該第二參考電壓放電至該第一參考電壓的狀態之間切換。其中該反相電路的該溫度補償觸發點是一第三參考電壓,其隨著溫度增加而降低。在一實施例中,該反相電路的該溫度補償觸發點是由一溫度補償電源所產生。In some embodiments, the first reference signal is a first reference voltage, the second reference signal is a second reference voltage, and the timing circuit is responsive to the inverter circuit at the first reference voltage A state of charging to the second reference voltage is switched between a state of discharging from the second reference voltage to the first reference voltage. The temperature compensation trigger point of the inverter circuit is a third reference voltage, which decreases as the temperature increases. In one embodiment, the temperature compensation trigger point of the inverter circuit is generated by a temperature compensated power supply.
本發明之另一目的為提供一種具有時鐘積體電路的裝置,將反相器以施密特觸發電路取代。Another object of the present invention is to provide an apparatus having a clocked integrated circuit in which the inverter is replaced by a Schmitt trigger circuit.
本發明之又一目的為提供一種具有時鐘積體電路的裝置,將反相器以運算放大器電路取代,且加上一個電流產生器型的參考電路,產生該溫度補償參考值。It is still another object of the present invention to provide an apparatus having a clocked integrated circuit in which an inverter is replaced by an operational amplifier circuit and a current generator type reference circuit is added to generate the temperature compensated reference value.
在許多不同的實施例中,該電流產生器型的參考電路是一電流產生器及一電阻特性裝置,包含一電阻、二極體及一金氧半電晶體之任一;且某些其他的裝置如一具有CTAT(與溫度反比)特性及PTAT(與溫度正比)特性至少之一者的裝置。In many different embodiments, the current generator type reference circuit is a current generator and a resistance characteristic device comprising any one of a resistor, a diode, and a MOS transistor; and some other The device is a device having at least one of CTAT (inverse temperature to temperature) characteristics and PTAT (for proportional to temperature) characteristics.
本發明之再一目的為提供一種具有時鐘積體電路的裝置,包含一栓鎖器產生該時鐘積體電路的一時鐘信號輸出。該栓鎖器包含一第一邏輯閘及一第二邏輯閘彼此交互耦接。該第一邏輯閘之一輸出與該第二邏輯閘之一第一輸入耦接。該第二邏輯閘之一輸出與該第一邏輯閘之一第一輸入耦接。該第二邏輯閘之該輸出與該第一邏輯閘之一第二輸入經由至少一第一時序電路及一第一反相器耦接。該第一邏輯閘之該輸出與該第二邏輯閘之一第二輸入經由至少一第二時序電路及一第二反相器耦接。It is still another object of the present invention to provide an apparatus having a clocked integrated circuit including a latch to generate a clock signal output of the clocked integrated circuit. The latch includes a first logic gate and a second logic gate coupled to each other. One of the first logic gate outputs is coupled to a first input of the second logic gate. One of the second logic gate outputs is coupled to a first input of the first logic gate. The output of the second logic gate and the second input of the first logic gate are coupled via at least a first timing circuit and a first inverter. The output of the first logic gate and the second input of the second logic gate are coupled via at least a second timing circuit and a second inverter.
該第一時序電路具有一輸出在一第一參考信號與一第二參考信號之間以一第一速率切換,該第一速率係由一與溫度相關的第一時間常數來決定。The first sequential circuit has an output that is switched between a first reference signal and a second reference signal at a first rate, the first rate being determined by a temperature dependent first time constant.
該第二時序電路具有一輸出在該第一參考信號與該第二參考信號之間以一第二速率切換,該第二速率係由一與溫度相關的一第二時間常數來決定。The second sequential circuit has an output that is switched between the first reference signal and the second reference signal at a second rate, the second rate being determined by a temperature dependent second time constant.
該第一時序電路及該第二時序電路之該些輸出決定該時鐘信號輸出的時序。The outputs of the first sequential circuit and the second sequential circuit determine the timing of the output of the clock signal.
該第一反相器比較該第一時序電路之一輸出與一第一溫度補償參考值,其是該第一反相器的一第一溫度補償觸發點。The first inverter compares an output of the first sequential circuit with a first temperature compensation reference value, which is a first temperature compensation trigger point of the first inverter.
該第二反相器比較該第二時序電路之一輸出與一第二溫度補償參考值,其是該第二反相器的一第二溫度補償觸發點。The second inverter compares one of the output of the second sequential circuit with a second temperature compensation reference value, which is a second temperature compensation trigger point of the second inverter.
在一實施例中,該第一參考信號是一第一參考電壓,該第二參考信號是一第二參考電壓,且該第一時序電路及該第二時序電路在自該第一參考電壓充電至該第二參考電壓的狀態與自該第二參考電壓放電至該第一參考電壓的狀態之間切換。在一實施例中,該些溫度補償參考值是一第三參考電壓,其隨著溫度增加而降低。In an embodiment, the first reference signal is a first reference voltage, the second reference signal is a second reference voltage, and the first sequential circuit and the second sequential circuit are from the first reference voltage A state of charging to the second reference voltage is switched between a state of discharging from the second reference voltage to the first reference voltage. In an embodiment, the temperature compensation reference values are a third reference voltage that decreases as the temperature increases.
在一實施例中,該第一及第二時間常數是一指數信號。In an embodiment, the first and second time constants are an exponential signal.
在一實施例中,該第一及第二溫度補償參考值是自一共同參考電路產生。In an embodiment, the first and second temperature compensation reference values are generated from a common reference circuit.
在一實施例中,該第一及第二溫度補償參考值是自不同的參考電路產生。In an embodiment, the first and second temperature compensation reference values are generated from different reference circuits.
本發明之另一目的為提供一種具有時鐘積體電路的裝置,將數組反相器以數組施密特觸發電路取代。Another object of the present invention is to provide an apparatus having a clocked integrated circuit in which an array inverter is replaced by an array Schmitt trigger circuit.
本發明之另一目的為提供一種具有時鐘積體電路的裝置,將數組反相器以數組運算放大器電路取代,且加上一個電流產生器型的參考電路,產生該溫度補償參考值。Another object of the present invention is to provide an apparatus having a clocked integrated circuit in which an arrayed inverter is replaced by an array operational amplifier circuit and a current generator type reference circuit is added to generate the temperature compensated reference value.
第1圖顯示一具有例如是溫度、接地電壓或是電源電壓變動承受能力的積體電路時鐘電路之方塊示意圖。Figure 1 shows a block diagram of an integrated circuit clock circuit having, for example, temperature, ground voltage, or power supply voltage variation tolerance.
此積體電路時鐘電路通常是一迴路結構,具有時序電路102、準位切換電路104及栓鎖電路栓鎖電路106。此栓鎖電路栓鎖電路106產生一自栓鎖電路栓鎖電路106至時序電路102的回授信號,及一時鐘輸出信號110。此時序電路102根據一時間常數在兩個參考信號之間切換。此時間常數因此決定了此積體電路時鐘電路的時序。一個典型的時間常數範例為一指數時間常數,其將一RC電路或是RL電路的上升及下降時間特徵化。此準位切換電路監控時序電路102的輸出,且根據此時序電路102是否足夠高或低來改變其輸出。栓鎖電路106的範例為SR栓鎖器、SR NAND栓鎖器、JK栓鎖器、閘式SR栓鎖器、閘式D栓鎖器、閘式觸發栓鎖器等。此栓鎖電路電路106具有兩個穩定狀態且在這兩個穩定狀態之間切換以產生一時鐘輸出信號110。The integrated circuit clock circuit is usually a one-loop structure, and has a sequential circuit 102, a level switching circuit 104, and a latch circuit latch circuit 106. The latch circuit latch circuit 106 generates a feedback signal from the latch circuit latch circuit 106 to the timing circuit 102 and a clock output signal 110. The timing circuit 102 switches between two reference signals in accordance with a time constant. This time constant thus determines the timing of the integrated circuit clock circuit. A typical time constant example is an exponential time constant that characterizes the rise and fall times of an RC circuit or RL circuit. This level switching circuit monitors the output of the timing circuit 102 and changes its output depending on whether the timing circuit 102 is sufficiently high or low. Examples of the latch circuit 106 are an SR latch, an SR NAND latch, a JK latch, a gate SR latch, a gate D latch, a gate trigger latch, and the like. The latch circuit circuit 106 has two stable states and switches between the two stable states to generate a clock output signal 110.
時序電路102所依賴的兩個參考信號是由電路116所產生,其也會產生準位切換電路104所依賴的準位切換參考信號。藉由同時為時序電路102產生所依賴的參考信號及為準位切換電路104產生所依賴的準位切換參考信號,電路116可以減少為時序電路102所依賴的參考信號及為準位切換電路104所依賴的準位切換參考信號共享的雜訊信號之雜訊相位。因為任何雜訊相位是很小的,此時序電路102所依賴參考信號中的雜訊信號之峰值與谷值係與準位切換電路104所依賴準位切換參考信號中的雜訊信號之峰值與谷值同步。The two reference signals on which the timing circuit 102 is dependent are generated by the circuit 116, which also produces a level switching reference signal upon which the level switching circuit 104 depends. The circuit 116 can be reduced to the reference signal on which the sequential circuit 102 depends and the level switching circuit 104 by generating the dependent reference signal for the sequential circuit 102 and generating the dependent level switching reference signal for the level switching circuit 104. The level of the noise of the noise signal shared by the reference signal is switched by the reference level. Because the phase of any noise is small, the peak value of the noise signal in the reference signal and the peak value of the noise signal in the reference switching signal of the level switching system 104 and the level switching circuit 104 are dependent on Valley value synchronization.
準位切換電路104所依賴的準位切換參考信號112,由電路118選取將其與準位切換電路104耦接。在某些實施例中,這會作為一採樣而保持住接地雜訊,所以相同的接地雜訊會由時序電路102所保持住,且會由準位切換電路104所依賴的準位切換參考電路所保持住。The level switching reference signal 112 on which the level switching circuit 104 depends is selected by the circuit 118 to couple it to the level switching circuit 104. In some embodiments, this will hold the ground noise as a sample, so the same ground noise will be held by the timing circuit 102 and will be referenced by the level switching reference circuit on which the level switching circuit 104 depends. Maintain.
雖然此處所示之方塊圖可以解決溫度、接地電壓或是電源電壓的變動問題,但是本發明不同實施例中的一改良時鐘電路僅解決這些變動參數的其中之一而已(例如:僅針對溫度雜訊、僅針對接地電壓雜訊或是僅針對電源電壓雜訊),或是這些變動參數的其中之二而已(例如:僅針對溫度和電源電壓雜訊、僅針對溫度和接地電壓雜訊或是僅針對電源電壓和接地電壓雜訊)。Although the block diagram shown herein can address temperature, ground voltage, or supply voltage variations, an improved clock circuit in various embodiments of the present invention addresses only one of these varying parameters (eg, only for temperature). Noise, only for ground voltage noise or only for supply voltage noise), or two of these variations (for example: temperature and supply voltage noise only, temperature and ground voltage noise only or It is only for power supply voltage and ground voltage noise).
第2A和2B圖顯示一具有對溫度變動承受能力的積體電路時鐘電路之電路示意圖,其包含一反相電路以評估時序電路的輸出。Figures 2A and 2B show a circuit diagram of an integrated circuit clock circuit with tolerance to temperature variations, including an inverting circuit to evaluate the output of the sequential circuit.
圖式中顯示平行放置的時序電路202A和202B,平行放置的反相電路204A和204B,以及一栓鎖電路206。此時序電路202A和202B通常是一具有電阻RX或RY的反相器,自電容CX或CY進行充電或放電,以改變OX或OY的輸出電壓。The sequence shows parallel placed timing circuits 202A and 202B, parallel placed inverting circuits 204A and 204B, and a latch circuit 206. The timing circuits 202A and 202B are typically an inverter having a resistor RX or RY that is charged or discharged from a capacitor CX or CY to change the output voltage of OX or OY.
第2A圖顯示一實施例,其中電容CX或CY係與一共同接地耦接。雖然圖式中並未明示所有可能的變化,本發明的技術包含所有實施例中具有電容CX或CY的時序電路,其中時序電路可以修改為將電容CX或CY係與一共同接地耦接。Figure 2A shows an embodiment in which the capacitor CX or CY is coupled to a common ground. Although not all possible variations are explicitly illustrated in the drawings, the techniques of the present invention include sequential circuits having capacitors CX or CY in all embodiments, wherein the timing circuits can be modified to couple capacitors CX or CY to a common ground.
在一實施例中,電容CX或CY實際上是一PMOS電晶體具有相反的端點與反相器的共同接地端解除耦接。In one embodiment, the capacitor CX or CY is actually a PMOS transistor having opposite ends that are decoupled from the common ground of the inverter.
第2B圖顯示一實施例,其中電容CX或CY係與一共同電源耦接。雖然圖式中並未明示所有可能的變化,本發明的技術包含所有實施例中具有電容CX或CY的時序電路,其中時序電路可以修改為將電容CX或CY係與一共同電源耦接。Figure 2B shows an embodiment in which the capacitor CX or CY is coupled to a common power source. Although not all possible variations are shown in the drawings, the techniques of the present invention include a sequential circuit having capacitors CX or CY in all embodiments, wherein the timing circuit can be modified to couple the capacitor CX or CY to a common power source.
在一實施例中,電容CX或CY實際上是一PMOS電晶體具有相反的端點與反相器的共同電源端解除耦接。In one embodiment, the capacitor CX or CY is actually a PMOS transistor having opposite ends that are decoupled from the common supply terminal of the inverter.
此反相電路204A和204B由一CTAT電源或是一與溫度成反比之電源,其會隨著溫度的增加而降低,來驅動。The inverter circuits 204A and 204B are driven by a CTAT power supply or a power supply that is inversely proportional to temperature, which decreases as the temperature increases.
此反相器係與運算放大器版本十分不同。在運算放大器版本中,一Vref與時序電路的輸出(如RC電路的上升/下降)進行比較。而在反相器版本中,此反相器的電源係被控制,以改變此反相器的行程且因此偵測時序電路的輸出(如RC電路的上升/下降)。在此反相器版本中,一個額外關於電源與反相器行程的溫度關係受到重視。This inverter is quite different from the op amp version. In the op amp version, a Vref is compared to the output of the sequential circuit (such as the rise/fall of the RC circuit). In the inverter version, the power supply of the inverter is controlled to change the stroke of the inverter and thus the output of the sequential circuit (such as the rise/fall of the RC circuit). In this inverter version, an additional temperature relationship regarding the power supply and inverter travel is taken into account.
此反相器相較於運算放大器版本具有以下的優點:(1)較低的工作電壓VDD;(2)較小的電路尺寸(反相器僅有兩個金氧半電晶體而運算放大器具有五個或以上的金氧半電晶體);(3)較簡單的設計;(4)較低的主動電流(反相器具有一個電流路徑,而運算放大器具有兩個或三個電流路徑及包含一個額外的電流鏡);及(5)較高的工作速度(反相器具有一個階段的延遲,而運算放大器具有兩個或三個階段的延遲)。This inverter has the following advantages over the op amp version: (1) lower operating voltage VDD; (2) smaller circuit size (inverter has only two MOS transistors and op amp has Five or more MOS transistors); (3) simpler design; (4) lower active current (inverter has one current path, and op amp has two or three current paths and contains An additional current mirror); and (5) a higher operating speed (the inverter has a phase delay and the op amp has two or three phase delays).
此栓鎖電路206是交互耦接的,如此一邏輯閘的輸出與另一邏輯閘的輸入耦接。一邏輯閘的一輸入是直接與另一邏輯閘的輸出耦接,此一邏輯閘的另一輸入是直接與另一邏輯閘的輸出經過時序電路與準位偵測電路而耦接。The latch circuit 206 is alternately coupled such that the output of one logic gate is coupled to the input of another logic gate. One input of a logic gate is directly coupled to the output of another logic gate. The other input of the logic gate is directly coupled to the output of another logic gate via a timing circuit and a level detection circuit.
第2C圖顯示時序電路的另一實施例。雖然大部分與第2A圖類似,在第2C圖中平行放置的時序電路202A和202B是由一PTAT電源或是一與溫度成正比之電源,其會隨著溫度的增加而增加,來驅動。雖然圖式中並未明示所有可能的變化,本發明的技術包含所有實施例中具有CTAT電源的時序電路,其中CTAT電源可以由PTAT電源來取代。Figure 2C shows another embodiment of a sequential circuit. Although mostly similar to FIG. 2A, the sequential circuits 202A and 202B placed in parallel in FIG. 2C are driven by a PTAT power supply or a power supply proportional to temperature, which increases as the temperature increases. Although not all possible variations are shown in the drawings, the techniques of the present invention include sequential circuits having CTAT power supplies in all embodiments, where the CTAT power supply can be replaced by a PTAT power supply.
類似地,雖然圖式中並未明示所有可能的變化,本發明的技術包含所有實施例中具有PTAT電源的時序電路,其中PTAT電源可以由CTAT電源來取代。Similarly, although not all possible variations are shown in the drawings, the techniques of the present invention include sequential circuits having PTAT power supplies in all embodiments, where the PTAT power supply can be replaced by a CTAT power supply.
第2D圖顯示一具有對溫度變動承受能力的積體電路時鐘電路之電路示意圖,其包含一施密特觸發電路以評估此時序電路的輸出。Figure 2D shows a circuit schematic of an integrated circuit clock circuit with tolerance to temperature variations, including a Schmitt trigger circuit to evaluate the output of the sequential circuit.
雖然第2B圖類似,在第2D圖中的準位切換電路210A和210B之施密特觸發電路是由一CTAT電源來驅動,且包含具有通過電阻之封閉迴路正回授的運算放大器。Although similar to FIG. 2B, the Schmitt trigger circuit of the level switching circuits 210A and 210B in FIG. 2D is driven by a CTAT power supply and includes an operational amplifier having a closed loop through the resistor.
第2E圖顯示一施密特觸發電路的示意圖。Figure 2E shows a schematic of a Schmitt trigger circuit.
第3圖顯示一具有對溫度變動承受能力的積體電路時鐘電路之電路示意圖,其包含一運算放大器電路以藉由比較輸出與一參考值來執行時序電路輸出的準位偵測。Figure 3 shows a circuit diagram of an integrated circuit clock circuit with tolerance to temperature variations, including an operational amplifier circuit for performing level detection of the output of the sequential circuit by comparing the output with a reference value.
圖式中顯示平行放置的時序電路302A和302B,平行放置的準位切換電路304A和304B,以及一栓鎖電路306。此準位切換電路304A和304B是一運算放大比較器具有一參考電壓CTAT_REF。除此之外,此時鐘電路大致與第2A圖類似。Parallelly placed sequential circuits 302A and 302B, parallel placed level switching circuits 304A and 304B, and a latch circuit 306 are shown. The level switching circuits 304A and 304B are an operational amplification comparator having a reference voltage CTAT_REF. In addition, this clock circuit is roughly similar to FIG. 2A.
第4A圖顯示準位偵測電路的參考信號之電路示意圖,其包含一具有隨著溫度的增加而增加電流輸出的電流源。Fig. 4A is a circuit diagram showing a reference signal of a level detecting circuit including a current source having an increased current output as temperature increases.
第4A圖顯示出依賴準位偵測電路的CTAT電源信號是如何產生的,在此圖中顯示為CTAT_REF 428。一個定量輸出的PTAT_I電流源426,會自電源調節器422經過電阻RES 424產生與溫度成正比的電流,隨著溫度的增加而增加。此電源調節器422會輸出與溫度無關的定電壓。此調節電源提供一定電源且不會隨著VDD及溫度改變。舉例而言,此調節器的輸出具有一能帶參考值。此輸出結果與溫度成反比,因為溫度增加時跨越此電阻的壓降也是增加,且此壓降下端的輸出端點之偏移則是減少。此電流源的一個範例顯示於第4E圖。Figure 4A shows how the CTAT power signal is dependent on the level detection circuit, shown as CTAT_REF 428 in this figure. A quantized PTAT_I current source 426 will generate a current proportional to temperature from the power regulator 422 via the resistor RES 424, which increases as the temperature increases. This power regulator 422 outputs a constant voltage independent of temperature. This regulated power supply provides a certain amount of power and does not change with VDD and temperature. For example, the output of this regulator has a band reference value. This output is inversely proportional to temperature because the voltage drop across this resistance increases as the temperature increases, and the offset at the output end of the lower end of the voltage drop is reduced. An example of this current source is shown in Figure 4E.
第4B圖是第4A圖電路的一個變異,其中PTAT_I定電流源426由CTAT_I定電流源430所取代,且依賴準位偵測電路的CTAT電源信號之CTAT_REF 428由依賴準位偵測電路的PTAT電源信號之PTAT_REF 432所取代。此電流源的一個範例顯示於第4G圖。Figure 4B is a variation of the circuit of Figure 4A, wherein the PTAT_I constant current source 426 is replaced by the CTAT_I constant current source 430, and the CTAT_REF 428 of the CTAT power supply signal dependent on the level detection circuit is controlled by the PTAT of the level-dependent detection circuit. The power signal is replaced by PTAT_REF 432. An example of this current source is shown in Figure 4G.
第4C圖是第4A圖電路的一個變異,具有一旁路電容器434與電阻RES 424並聯,以減少雜訊。此外,此電流源包含一電流鏡。此電流源的一個範例顯示於第4D圖。Figure 4C is a variation of the circuit of Figure 4A with a bypass capacitor 434 in parallel with resistor RES 424 to reduce noise. In addition, this current source includes a current mirror. An example of this current source is shown in Figure 4D.
第4D圖是一電流發生器的示意圖,其根據參考電路自PMOS裝置提供PTAT電流。Figure 4D is a schematic diagram of a current generator that provides PTAT current from a PMOS device in accordance with a reference circuit.
第4E圖是一電流發生器的示意圖,其根據參考電路自NMOS裝置提供PTAT電流。Figure 4E is a schematic diagram of a current generator that provides PTAT current from an NMOS device in accordance with a reference circuit.
在第4D圖與第4E圖中,此電路使用介於兩個具有正比於溫度的相同電流NMOS電晶體之delta_Vg。所以delta_Vg/電阻=PTAT_I。在第4D圖與第4E圖中,具有圓圈的兩個電晶體是相同的。In Figures 4D and 4E, this circuit uses two delta_Vgs of the same current NMOS transistor with a temperature proportional to temperature. So delta_Vg/resistance = PTAT_I. In the 4Dth and 4Eth drawings, the two transistors having a circle are the same.
第4F圖是一電流發生器的示意圖,其根據參考電路自PMOS裝置提供CTAT電流。Figure 4F is a schematic diagram of a current generator that provides CTAT current from a PMOS device in accordance with a reference circuit.
第4G圖是一電流發生器的示意圖,其根據參考電路自NMOS裝置提供CTAT電流。Figure 4G is a schematic diagram of a current generator that provides CTAT current from an NMOS device in accordance with a reference circuit.
此處所描述的一個根據參考電路的電流發生器是較佳地,因為在許多實施例中,單一與溫度相關的參數可以被控制,而不是兩個與溫度相關的材料相關參數,其具有不同的溫度關聯性。A current generator according to the reference circuit described herein is preferred because in many embodiments a single temperature dependent parameter can be controlled instead of two temperature dependent material related parameters, which have different Temperature correlation.
第5A圖顯示準位偵測電路的參考信號之電路示意圖,其包含一具有隨著溫度的增加而降低電流輸出的電流源。Figure 5A is a circuit diagram showing a reference signal of a level detecting circuit including a current source having a reduced current output as temperature increases.
第5A圖顯示出依賴準位偵測電路的CTAT電源信號是如何產生的,在此圖中顯示為CTAT_REF 528。一個定量輸出的PTAT_I電流源526,會自電源調節器522經過電阻RES 524產生與溫度成反比的電流,隨著溫度的增加而降低。此輸出結果與溫度成反比,因為溫度增加時跨越此電阻的壓降也是減少,且此壓降上端的輸出端點之偏移也是減少。Figure 5A shows how the CTAT power signal is dependent on the level detection circuit, shown as CTAT_REF 528 in this figure. A quantized PTAT_I current source 526, from the power regulator 522 via the resistor RES 524, produces a current that is inversely proportional to temperature and decreases as the temperature increases. This output is inversely proportional to temperature because the voltage drop across this resistor is also reduced as the temperature increases, and the offset of the output end of the upper end of the voltage drop is also reduced.
所示電流源的一個例示為一疊接電流源。One example of the current source shown is a stacked current source.
第5B、5C、5D和5E圖是產生參考電壓信號的其他範例。Figures 5B, 5C, 5D, and 5E are other examples of generating a reference voltage signal.
第5B圖是第5A圖電路的一個變異,其中CTAT_I定電流源526由PTAT_I定電流源530所取代,且依賴準位偵測電路的CTAT電源信號之CTAT_REF 528由依賴準位偵測電路的PTAT電源信號之PTAT_REF 532所取代。Figure 5B is a variation of the circuit of Figure 5A, wherein the CTAT_I constant current source 526 is replaced by the PTAT_I constant current source 530, and the CTAT_REF 528 of the CTAT power supply signal dependent on the level detection circuit is controlled by the PTAT of the level-dependent detection circuit. The power signal is replaced by PTAT_REF 532.
第5C圖是第5A圖電路的一個變異,其中電阻RES 524是由二極體DI0 530所取代。此電流源的一個範例顯示於第4F圖。Figure 5C is a variation of the circuit of Figure 5A in which the resistor RES 524 is replaced by a diode DI0 530. An example of this current source is shown in Figure 4F.
第5D圖是第5A圖電路的一個變異,其中CTAT_I定電流源526由PTAT_I定電流源530所取代,且輸出端點之偏移自跨越此定電流源上端的壓降移至跨越此定電流源下端的壓降。Figure 5D is a variation of the circuit of Figure 5A, in which the CTAT_I constant current source 526 is replaced by the PTAT_I constant current source 530, and the offset of the output terminal is shifted from the voltage drop across the upper end of the constant current source to across the constant current. The pressure drop at the lower end of the source.
第5E圖是第5C圖電路的一個變異,其中CTAT_I定電流源526由電阻RES 524所取代。Figure 5E is a variation of the circuit of Figure 5C in which the CTAT_I constant current source 526 is replaced by a resistor RES 524.
第6A圖顯示一組時間與大小關係的軌跡曲線,其顯示此時鐘電路是如何具有溫度變動承受能力,其產生時鐘時序可以隨著溫度的改變而大幅地改變。Figure 6A shows a set of time-to-size trajectory curves showing how this clock circuit has temperature variation tolerance, and its resulting clock timing can vary greatly with temperature.
第6A圖顯示一高溫、一低溫和一中等溫度的軌跡區間。溫度越低的話,則此時序電路變得越快,且溫度越高的話,則此時序電路變得越慢。因為時序電路的共同參考信號,此時序電路在低溫時會較在高溫時更快抵達參考值。因此,此時鍾電路的時序在低溫時會較在高溫時更快。Figure 6A shows a trajectory interval for a high temperature, a low temperature, and a medium temperature. The lower the temperature, the faster the timing circuit becomes, and the higher the temperature, the slower the timing circuit becomes. Because of the common reference signal of the sequential circuits, this sequential circuit will reach the reference value faster at low temperatures than at high temperatures. Therefore, the timing of this clock circuit will be faster at low temperatures than at high temperatures.
第6B圖顯示一組時間與大小關係的軌跡曲線,其顯示此時鐘電路是如何具有溫度變動承受能力,因為使用第2到5圖中所示的電路,其產生時鐘時序基本上不隨著溫度的改變而改變。Figure 6B shows a set of time-to-size trajectory curves showing how this clock circuit has temperature variation tolerance because the circuit shown in Figures 2 through 5 produces clock timing that is essentially not temperature dependent. Change with change.
第6B圖顯示一高溫、一低溫和一中等溫度的軌跡區間。如第6A圖所示,溫度越低的話,則此時序電路變得越快,且溫度越高的話,則此時序電路變得越慢。然而,因為第6B圖中使用不同的時序電路,係與第6A圖中所使用的時序電路不同。雖然時序電路在低溫時會較在高溫時更快抵達參考值,此時序電路的參考值也相對的更高。因此,此時鍾電路的時序顯示出很小的溫度變動,而是導致此時鐘電路的速度變動。Figure 6B shows a trajectory interval for a high temperature, a low temperature, and a medium temperature. As shown in Fig. 6A, the lower the temperature, the faster the timing circuit becomes, and the higher the temperature, the slower the timing circuit becomes. However, since the different sequential circuits are used in FIG. 6B, they are different from the sequential circuits used in FIG. 6A. Although the sequential circuit will reach the reference value faster than at high temperatures at low temperatures, the reference value of this sequential circuit is relatively higher. Therefore, the timing of this clock circuit shows a small temperature variation, but causes the speed of the clock circuit to fluctuate.
第7A和7B圖是其他的實施例,其顯示下降信號而不是第6A和6B圖中的上升信號,但是仍顯示相同的時間常數。Figures 7A and 7B are other embodiments showing the falling signal instead of the rising signal in Figures 6A and 6B, but still showing the same time constant.
一時鐘信號是依賴第6A和6B圖中的上升信號或是第7A和7B圖中的下降信號,是根據電容CX或CY係與第2A圖中的地耦接或是與第2B圖中的電源耦接而定。A clock signal is dependent on the rising signal in Figures 6A and 6B or the falling signal in Figures 7A and 7B, depending on whether the capacitance CX or CY is coupled to the ground in Figure 2A or in Figure 2B. Power supply depends.
第8A和8B圖顯示一具有對接地雜訊變動承受能力的積體電路時鐘電路之電路示意圖,其包含一電晶體選擇性的與接地雜訊耦接,以作為此時序電路輸出的準位偵測之參考信號的一部分。8A and 8B are circuit diagrams showing an integrated circuit clock circuit having a capability to withstand ground noise fluctuations, including a transistor selectively coupled to ground noise to serve as a level detector for the output of the sequential circuit. Part of the reference signal measured.
圖式中顯示平行放置的時序電路802A和802B,平行放置的準位切換電路804A和804B,以及一栓鎖電路806。此準位切換電路804A和804B選擇性的與來自準位切換參考電路816A和816B的接地雜訊耦接,且儲存於電容節點REF X或是REF Y,係各自根據由信號ENX所開啟的切換電晶體818A及由信號ENY所開啟的切換電晶體818B之切換行為所決定。此會作為一採樣而保持住接地雜訊,所以相同的接地雜訊會由時序電路802A或802B所保持住,且會由準位切換電路104所依賴之準位切換參考電路的節點REF X或是REF Y所保持住。Parallelly placed sequential circuits 802A and 802B, parallel placed level switching circuits 804A and 804B, and a latch circuit 806 are shown. The level switching circuits 804A and 804B are selectively coupled to ground noise from the level switching reference circuits 816A and 816B, and stored in the capacitor node REF X or REF Y, respectively, according to the switching enabled by the signal ENX. The switching behavior of transistor 818A and switching transistor 818B turned on by signal ENY is determined. This will hold the ground noise as a sample, so the same ground noise will be held by the timing circuit 802A or 802B, and the node REF X of the reference switching circuit will be switched by the level switching circuit 104. It is held by REF Y.
在一實施例中,電容CX或CY實際上是一PMOS電晶體具有相反的端點與共同電源端解除耦接,此共同電源與RX或RY連接。In one embodiment, the capacitor CX or CY is actually a PMOS transistor having opposite ends that are decoupled from the common supply terminal, the common supply being coupled to RX or RY.
當ENX為高準位時OX保持接地。之後,ENX變為低準位則關閉NMOS;在此時接地雜訊被保持在OX。假如雜訊是高準位則預充電速度很快;假如雜訊是低準位則預充電速度很慢。此電路使得REFX或REFY在相同時間保持相同的接地雜訊。The OX remains grounded when ENX is high. After that, ENX turns to the low level to turn off the NMOS; at this point the ground noise is held at OX. If the noise is high level, the pre-charging speed is very fast; if the noise is low level, the pre-charging speed is very slow. This circuit allows REFX or REFY to maintain the same ground noise at the same time.
在第8A圖中,此切換參考電路參考節點REFX或REFY,包括電容電路與地耦接。在第8B圖中,此切換參考電路參考節點REFX或REFY,包括電容電路與電源耦接。In Figure 8A, the switching reference circuit references node REFX or REFY, including the capacitive circuit coupled to ground. In FIG. 8B, the switching reference circuit is referenced to node REFX or REFY, and includes a capacitor circuit coupled to the power source.
在不同的實施例中,準位切換參考電路816A和816B可以是兩組不同的電路或是同一組電路由平行放置的時序電路及多重準位切換電路804A和804B所分享。In various embodiments, the level shift reference circuits 816A and 816B can be two different sets of circuits or the same set of circuits shared by the parallel placed timing circuits and the multi-level switching circuits 804A and 804B.
第9圖為一組電壓與時間的關係圖,其顯示此時鐘電路是如何具有對接地雜訊變動的承受能力,其產生時鐘時序可以對隨著時間改變的接地雜訊而大幅地改變。Figure 9 is a plot of voltage vs. time showing how the clock circuit has the ability to withstand ground noise variations, and the clock timing that can be generated can vary greatly with respect to ground noise that changes over time.
第9圖顯示軌跡OX和OY是如何由接地雜訊,在此圖中為REF_LO信號所影響的。當接地雜訊有一峰值時,則此時序電路會開始自REF_LO進行充電至REF_HI的程序,導致時序電路僅需較少的時間就可以自REF_LO充電至REF_HI。因此,此時鐘信號輸出910於此時鐘周期中具有一較廣的變動。Figure 9 shows how the traces OX and OY are affected by ground noise, which is affected by the REF_LO signal in this figure. When the ground noise has a peak, the timing circuit will start charging from REF_LO to REF_HI, causing the timing circuit to charge from REF_LO to REF_HI in less time. Therefore, this clock signal output 910 has a wide variation in this clock cycle.
當ENX為高準位時,OX保持接地且電壓隨著接地雜訊而變動。當ENX為低準位,且關閉NMOS,則接地雜訊被保持在OX。但是參考準位仍隨著接地雜訊而變動。最壞的情況是OX保持一高準位的接地雜訊且於充電期間此參考電路承受一負的接地準位;則此參考值會遠較預期為低。因此一類似取樣及保持結構在REFX或REFY保持相同的接地雜訊。When ENX is high, OX remains grounded and the voltage varies with ground noise. When ENX is low and the NMOS is turned off, the ground noise is held at OX. However, the reference level still varies with ground noise. In the worst case, OX maintains a high level of ground noise and the reference circuit is subjected to a negative ground level during charging; this reference value will be much lower than expected. Therefore a similar sample and hold structure maintains the same ground noise in REFX or REFY.
第10圖為一組電壓與時間的關係圖,其顯示此時鐘電路是如何具有對接地雜訊變動的承受能力,其因為第8圖中的電路而可以在對隨著時間改變的接地雜訊中產生相對穩定的時鐘時序。Figure 10 is a set of voltage vs. time graphs showing how the clock circuit has the ability to withstand ground noise variations. Because of the circuit in Figure 8, the ground noise can be changed over time. A relatively stable clock timing is generated.
第10圖顯示軌跡OX和OY是如何由接地雜訊,在此圖中為REF_LO信號所影響的。當接地雜訊有一峰值或是其他的改變時,則此峰值或是其他的改變會儲存於第8圖中的電容節點REF X或是REF Y。因為接地雜訊對REF_LO信號的影響由取樣後保持參考電路來追蹤,此準位偵測電路是自準位偵測參考電路與時序電路比較相同的接地雜訊。於接地雜訊被以此取樣後保持之方式後,接地雜訊,其會繼續改變,自此取樣電路中解除耦接。因此,此時序電路自REF_LO進行充電至REF_HI的程序中並沒有一提前開始,雖然有著接地雜訊,此時序電路仍需要相同的時間自REF_LO充電至REF_HI。因此,導致此時鐘信號輸出910於一廣泛改變的接地雜訊下仍具有相同的時鐘周期。Figure 10 shows how the traces OX and OY are affected by ground noise, which is affected by the REF_LO signal in this figure. When the ground noise has a peak or other change, the peak or other changes are stored in the capacitor node REF X or REF Y in Figure 8. Because the influence of ground noise on the REF_LO signal is tracked by the reference circuit after sampling, the level detection circuit is the same ground noise as the self-alignment detection reference circuit and the sequential circuit. After the ground noise is sampled and held, the ground noise will continue to change and the coupling will be decoupled. Therefore, this timing circuit does not start from the REF_LO charging to REF_HI program. Although there is ground noise, this sequential circuit still needs the same time to charge from REF_LO to REF_HI. Thus, this clock signal output 910 still has the same clock cycle under a widely varying ground noise.
在另一實施例中,係將接地雜訊取樣後再於放電時將此接地雜訊與取樣電路解除耦接,而不是如第9圖和第10圖中所示的於充電時將此接地雜訊與取樣電路解除耦接。此實施例會造成額外的問題因為必須解決自雜訊電源調節器所產生的電源雜訊問題。In another embodiment, the ground noise is sampled and then the ground noise is decoupled from the sampling circuit during discharge, instead of being grounded during charging as shown in FIGS. 9 and 10. The noise is uncoupled from the sampling circuit. This embodiment poses an additional problem because the power supply noise problem generated by the self-noise power conditioner must be resolved.
在另一實施例中(類似第2C圖),此取樣及保持電路會保持電源雜訊而不是接地雜訊。In another embodiment (similar to Figure 2C), the sample and hold circuit maintains power supply noise rather than ground noise.
第11A和11B圖顯示一具有對電源雜訊變動承受能力的積體電路時鐘電路之電路示意圖,其包含一電晶體與時序電路電源之電源雜訊及時序電路輸出的準位偵測之參考信號的電源雜訊共同分享之雜訊相位。11A and 11B are circuit diagrams showing an integrated circuit clock circuit having power supply noise tolerance capability, including a power supply for the transistor and the timing circuit power supply, and a reference signal for the level detection of the output of the sequential circuit. The power noise shared the noise phase.
圖式中顯示平行放置的時序電路1102A和1102B,平行放置的準位切換電路1104A和1104B,以及一栓鎖電路1106。如圖所示也包含時序電源及準位切換參考值產生器1116A和1116B,其會產生與時序電路電源之電源雜訊及時序電路輸出的準位偵測之參考信號的電源雜訊相同的雜訊相位。Parallelly placed sequential circuits 1102A and 1102B, parallel placed level switching circuits 1104A and 1104B, and a latch circuit 1106 are shown. As shown, the timing power supply and level switching reference value generators 1116A and 1116B are also included, which generate the same power noise as the power supply noise of the timing circuit power supply and the reference signal of the timing circuit output. Phase of the signal.
在第11A圖中,此電容電路CX或CY與地耦接。在第11B圖中,此電容電路CX或CY與電源1116A或1116B耦接。In Fig. 11A, the capacitor circuit CX or CY is coupled to ground. In FIG. 11B, the capacitor circuit CX or CY is coupled to the power source 1116A or 1116B.
第12圖顯示一電源電路的電路圖,其與時序電路電源之電源雜訊及時序電路輸出的準位偵測之參考信號的電源雜訊分享相同的雜訊相位。Figure 12 shows a circuit diagram of a power supply circuit that shares the same noise phase as the power supply noise of the timing circuit power supply and the power supply noise of the reference signal of the timing circuit output.
第12圖顯示一電源1236來驅動一運算放大器1232。此運算放大器在其非反相輸入具有一參考信號REF_OP 1234。此REF_OP 1234的一個例示為一能隙參考電路於1.3V。一金氧半場效電晶體1238具有一邏輯閘與運算放大器1232的輸出耦接,一汲極與電源1236耦接,及一源極與時序電源輸出1246耦接。時序電源輸出1246與準位切換參考值1248由電阻R1 1240分隔。準位切換參考值1248與運算放大器1232的負回授點由電阻R2 1242分隔。最後,電阻R3將此負回授點與地耦接。Figure 12 shows a power supply 1236 for driving an operational amplifier 1232. This operational amplifier has a reference signal REF_OP 1234 at its non-inverting input. An example of this REF_OP 1234 is a bandgap reference circuit at 1.3V. A MOS field effect transistor 1238 has a logic gate coupled to the output of the operational amplifier 1232, a drain coupled to the power supply 1236, and a source coupled to the timing power output 1246. The timing power supply output 1246 and the level switching reference value 1248 are separated by a resistor R1 1240. The level switching reference value 1248 and the negative feedback point of the operational amplifier 1232 are separated by a resistor R2 1242. Finally, resistor R3 couples this negative feedback point to ground.
另一個實施例則使用浮接節點的電容耦合以維持時序電源輸出1246與準位切換參考值1248之間相同的雜訊相位,其中時序電源輸出1246與準位切換參考值1248之一是浮接的。Another embodiment uses the capacitive coupling of the floating node to maintain the same noise phase between the timing power supply output 1246 and the level switching reference value 1248, wherein one of the timing power supply output 1246 and the level switching reference value 1248 is floating. of.
雖然上述的實施例是特別為了維持時序電源輸出1246與準位切換參考值1248之間相同的雜訊相位所設計的,但是其他的設計中則不是如此。其他的設計中時序電源輸出1246與準位切換參考值1248之間為了以下的原因之一或多者而具有不同的雜訊相位:(1)因為晶粒的配置使參考電路並不靠近時序電路;(2)調節器中的參考電路具有較VDD電源為佳的電源供應拒絕比例(PSRR);及(3)即使是RC電源具有電源調節器,因為不同的輸出負載及轉變,一個雜訊相位差異仍會維持,且此電源調節器必須支持較大電流及較大的輸出轉變。Although the above embodiment is specifically designed to maintain the same noise phase between the timing power supply output 1246 and the level switching reference value 1248, this is not the case in other designs. In other designs, the timing power supply output 1246 and the level switching reference value 1248 have different noise phases for one or more of the following reasons: (1) because the configuration of the die makes the reference circuit not close to the sequential circuit (2) The reference circuit in the regulator has a power supply rejection ratio (PSRR) better than the VDD power supply; and (3) even the RC power supply has a power regulator because of different output loads and transitions, a noise phase The difference will still be maintained and the power regulator must support large currents and large output transitions.
第13圖為一組電壓與時間的關係圖,其顯示因為如第11圖或第12圖中的電路關係,如何在時序電路電源與使用於時序電路輸出的準位偵測之參考信號之間具有相同的雜訊相位。Figure 13 is a set of voltage vs. time graphs showing how the timing circuit power supply and the reference signal used for the level detection of the output of the sequential circuit are compared between the timing signals as shown in Fig. 11 or Fig. 12. Have the same noise phase.
第13圖顯示之時序電路電源1301及使用於時序電路輸出1302的準位偵測之參考信號之間兩者的電源雜訊具有相同的雜訊相位。將軌跡1303放置於軌跡1301及1302之上可以顯示此情況,雖然電源雜訊的大小是改變的,而軌跡1301及1302的電源雜訊之峰值與谷值是同步的。Figure 13 shows that the power supply noise between the sequential circuit power supply 1301 and the reference signal used for the level detection of the sequential circuit output 1302 has the same noise phase. Placing the track 1303 over the tracks 1301 and 1302 can indicate that although the size of the power supply noise is changed, the peaks and valleys of the power supply noise of the tracks 1301 and 1302 are synchronized.
第14圖為一組電壓與時間的關係圖,其顯示此時鐘電路是如何具有對電源雜訊變動的承受能力,其可以在對隨著時間大幅改變的電源雜訊中產生時鐘時序。Figure 14 is a plot of voltage vs. time showing how this clock circuit has the ability to withstand power supply noise fluctuations, which can generate clock timing in power supply noise that changes significantly over time.
第14圖顯示軌跡OX和OY是如何由電源雜訊1401所影響的。當電源雜訊有一大幅下降時,則此時序電路會開始自REF_LO進行充電至REF_HI的程序,導致時序電路僅需較少的時間就可以自REF_LO充電至REF_HI。類似地,當電源雜訊有一峰值時,則此時序電路自REF_LO進行充電至REF_HI的程序會變得較慢,導致時序電路需要更多的時間才可以自REF_LO充電至REF_HI。這些改變係自一穩定(定值)的準位切換參考值之後發生。因此,此時鐘信號輸出1410於此時鐘周期中具有一較廣的變動。Figure 14 shows how the traces OX and OY are affected by the power supply noise 1401. When there is a large drop in power supply noise, the timing circuit begins to charge from REF_LO to REF_HI, causing the sequential circuit to charge from REF_LO to REF_HI in less time. Similarly, when the power supply noise has a peak, the program that charges the REF_LO from REF_LO to REF_HI becomes slower, causing the timing circuit to take more time to charge from REF_LO to REF_HI. These changes occur after switching the reference value from a stable (fixed) level. Therefore, this clock signal output 1410 has a wide variation in this clock cycle.
第15圖為一組電壓與時間的關係圖,其顯示此時鐘電路是如何具有對電源雜訊變動的承受能力,其因為第11圖和第12圖中的電路而可以在對隨著時間大幅改變的電源雜訊中產生相對穩定的時鐘時序。Figure 15 is a set of voltage vs. time graphs showing how the clock circuit has the ability to withstand power supply noise fluctuations, which can be significantly greater over time due to the circuits in Figures 11 and 12. A relatively stable clock timing is produced in the changed power supply noise.
第15圖顯示軌跡OX和OY是如何由接地雜訊1401所影響的。與第14圖不同的是,當電源雜訊1501有一峰值或是其他的變動時,則準位切換參考值會有一同步的峰值或是其他的變動。雖然此峰值或是其他的變動在此準位切換參考值與電源雜訊相較會有一個較小的大小,但是介於時序電路電源1501與準位切換參考值的同步特性大幅地減少了時鐘信號的變動。因此,此時鐘信號輸出1510在接地雜訊具有較廣變動的情況下仍具有一共同的時鐘週期。Figure 15 shows how the trajectories OX and OY are affected by ground noise 1401. Different from the 14th figure, when the power supply noise 1501 has a peak or other changes, the reference switching reference value may have a synchronous peak or other variation. Although this peak or other variation has a smaller size in this level switching reference value compared to the power supply noise, the synchronization characteristic between the sequential circuit power supply 1501 and the level switching reference value greatly reduces the clock. Signal changes. Therefore, the clock signal output 1510 still has a common clock period in the case where the ground noise has a wide variation.
第16A和16B圖顯示一具有對電源雜訊變動承受能力的積體電路時鐘電路之電路示意圖,以切換此時鐘的電源。當電源開啟時,若是尚未達到穩定電源且需要此VDD電源以產生給邏輯電路的時鐘。邏輯電路會等待穩定電源的設置時間。當達到穩定電源後,則此時鐘切換至一穩定時鐘。Figures 16A and 16B show a circuit diagram of an integrated circuit clock circuit with power supply noise tolerance to switch the power of this clock. When the power is turned on, if the stable power has not been reached and the VDD power is needed to generate a clock to the logic circuit. The logic circuit will wait for the set time of the stable power supply. When a stable power supply is reached, the clock switches to a stable clock.
圖式中顯示平行放置的時序電路1602A和1602B,平行放置的準位切換電路1604A和1604B,以及一栓鎖電路1606。如圖所示也包含時序電源及準位切換參考值產生器1616A和1616B,其會產生與時序電路電源之電源雜訊及時序電路輸出的準位偵測之參考信號的電源雜訊相同的雜訊相位。圖示中也包含介於VDD與時序電源及準位切換參考值產生器1616A之間的切換開關1620A,介於VDD與時序電源及準位切換參考值產生器1616B之間的切換開關1620B,介於準位切換電路1604A與栓鎖電路1606之間的切換開關1620C,及介於準位切換電路1604B與栓鎖電路1606之間的切換開關1620D。Parallelly placed sequential circuits 1602A and 1602B, parallel placed level switching circuits 1604A and 1604B, and a latch circuit 1606 are shown. The figure also includes timing power supply and level switching reference value generators 1616A and 1616B, which generate the same power noise as the power supply noise of the timing circuit power supply and the reference signal of the timing circuit output. Phase of the signal. The switch also includes a switch 1620A between the VDD and the timing power supply and the level switching reference value generator 1616A, and a switch 1620B between the VDD and the timing power supply and the level switching reference value generator 1616B. A switch 1620C between the level switching circuit 1604A and the latch circuit 1606, and a switch 1620D between the level switching circuit 1604B and the latch circuit 1606.
在第16A圖中,此電容電路CX或CY與地耦接。在第16B圖中,此電容電路CX或CY與電源1616A或1616B耦接。In Fig. 16A, the capacitor circuit CX or CY is coupled to ground. In FIG. 16B, the capacitor circuit CX or CY is coupled to the power source 1616A or 1616B.
第17圖係可應用本發明具有改良積體電路時鐘電路之一記憶電路的方塊示意圖。Figure 17 is a block diagram showing a memory circuit of the present invention having an improved integrated circuit clock circuit.
第17圖是包含一記憶體陣列1712的積體電路1700之簡要方塊示意圖。一字元線/區塊選取解碼器及驅動器1714係耦接至,且與其有著電性溝通,複數條字元線1716及字串選擇線,其間係沿著記憶胞陣列1712的列方向排列。一位元線(行)解碼器1718係耦接至複數條沿著記憶體陣列1712之行排列的位元線1720,且與其有著電性溝通,以自讀取資料,或是寫入資料至,記憶胞陣列1712的記憶胞中。位址係透過匯流排1722提供至字元線和區塊選擇解碼器1714及位元線解碼器1718。方塊1724中的感應放大器與資料輸入結構,包含作為讀取、程式化和抹除模式的電流源,係透過匯流排1726耦接至位元線解碼器1718。資料係由積體電路1710上的輸入/輸出埠透過資料輸入線1728傳送至方塊1724之資料輸入結構。在此例示的實施例中,其他電路1730也包括在此積體電路1710內,例如通用目的處理器或特殊用途電路,或是由此記憶陣列所支援的組合模組以提供單晶片系統功能。資料係由方塊1724中的感應放大器,透過資料輸出線1732,傳送至積體電路1700上的輸入/輸出埠或其他積體電路1700內或外之資料目的地。狀態機構及改良時鐘電路(如此處所討論的)係於電路1734中。Figure 17 is a schematic block diagram of an integrated circuit 1700 including a memory array 1712. A word line/block selection decoder and driver 1714 are coupled to, and have electrical communication therewith, a plurality of word line lines 1716 and a string selection line arranged along the column direction of the memory cell array 1712. A one-line (row) decoder 1718 is coupled to the plurality of bit lines 1720 arranged along the row of the memory array 1712, and has electrical communication therewith for self-reading data or writing data to , memory cell array 1712 in the memory cell. The address is provided through bus bar 1722 to word line and block select decoder 1714 and bit line decoder 1718. The sense amplifier and data input structures in block 1724, including current sources as read, program, and erase modes, are coupled to bit line decoder 1718 via bus bar 1726. The data is transferred from the input/output port on the integrated circuit 1710 through the data input line 1728 to the data input structure of block 1724. In the illustrated embodiment, other circuits 1730 are also included in the integrated circuit 1710, such as a general purpose processor or special purpose circuit, or a combination module supported by the memory array to provide a single wafer system function. The data is transmitted by the sense amplifier in block 1724, through data output line 1732, to the input/output port on integrated circuit 1700 or to other data destinations within or outside of integrated circuit 1700. The state mechanism and the improved clock circuit (as discussed herein) are in circuit 1734.
第18圖為一電路圖,其類似於第16圖,顯示一具有對電源雜訊變動承受能力的積體電路時鐘電路之電路示意圖,且更包含切換電路介於參考產生器及運算放大器之間。如同第8圖所示,切換電晶體818A由信號ENX所開啟而切換電晶體818B由信號ENY所開啟。類似於第8圖,來自時序電源及準位切換產生器1616A和1616B的接地雜訊係儲存於電容性節點REFX或REFY之中。Figure 18 is a circuit diagram similar to Figure 16, showing a circuit diagram of an integrated circuit clock circuit having tolerance to power supply noise fluctuations, and further including a switching circuit between the reference generator and the operational amplifier. As shown in Fig. 8, switching transistor 818A is turned on by signal ENX and switching transistor 818B is turned on by signal ENY. Similar to Figure 8, the grounded noise from the timing power and level switching generators 1616A and 1616B is stored in the capacitive node REFX or REFY.
雖然本發明係已參照實施例來加以描述,然本發明創作並未受限於其詳細描述內容。替換方式及修改樣式係已於先前描述中所建議,且其他替換方式及修改樣式將為熟習此項技藝之人士所思及。特別是,所有具有實質上相同於本發明之構件結合而達成與本發明實質上相同結果者,皆不脫離本發明之精神範疇。因此,所有此等替換方式及修改樣式係意欲落在本發明於隨附申請專利範圍及其均等物所界定的範疇之中。Although the present invention has been described with reference to the embodiments, the present invention is not limited by the detailed description thereof. Alternatives and modifications are suggested in the foregoing description, and other alternatives and modifications will be apparent to those skilled in the art. In particular, all combinations of components that are substantially identical to the invention can achieve substantially the same results as the present invention without departing from the spirit of the invention. Therefore, all such alternatives and modifications are intended to be within the scope of the invention as defined by the appended claims and their equivalents.
102...時序電路102. . . Sequential circuit
104...準位切換電路104. . . Level switching circuit
106...栓鎖電路106. . . Latch circuit
108...回授信號108. . . Feedback signal
110...時鐘信號110. . . Clock signal
112...準位切換參考值112. . . Level switching reference value
114...時序電路參考值114. . . Sequential circuit reference
116...產生具有訊的溫度補償準位切換參考值及時序電路參考值之電路116. . . Generating a circuit with a temperature compensation level switching reference value and a timing circuit reference value
118...選擇性地與雜訊耦接之電路118. . . a circuit selectively coupled to noise
202A、202B、302A、302B、802A、802B...時序電路202A, 202B, 302A, 302B, 802A, 802B. . . Sequential circuit
1102A、1102B、1602A、1602B...時序電路1102A, 1102B, 1602A, 1602B. . . Sequential circuit
204A、204B...反相電路204A, 204B. . . Inverting circuit
206、306、806、1106、1606...栓鎖電路206, 306, 806, 1106, 1606. . . Latch circuit
210A和210B...施密特觸發電路210A and 210B. . . Schmitt trigger circuit
304A、304B、804A、804B...準位切換電路304A, 304B, 804A, 804B. . . Level switching circuit
1104A、1104B、1604A、1604B...準位切換電路1104A, 1104B, 1604A, 1604B. . . Level switching circuit
422、522...電源調節器422, 522. . . Power conditioner
816A、816B...準位切換參考電路816A, 816B. . . Level switching reference circuit
1116A、1116B...時序電源及準位切換參考值產生器1116A, 1116B. . . Timing power supply and level switching reference generator
1234...參考信號REF_OP1234. . . Reference signal REF_OP
1236...電源1236. . . power supply
1238...金氧半場效電晶體1238. . . Gold oxygen half field effect transistor
1246、1301...時序電源1246, 1301. . . Timing power supply
1248、1302...準位切換參考值1248, 1302. . . Level switching reference value
1303...電源及參考值1303. . . Power supply and reference value
1616A、1616B...時序電源及準位切換參考值產生器1616A, 1616B. . . Timing power supply and level switching reference generator
1620A、1620B、1620C、1620D...切換開關1620A, 1620B, 1620C, 1620D. . . Toggle switch
1700...積體電路1700. . . Integrated circuit
1712...記憶體陣列1712. . . Memory array
1714...字元線/區塊選取解碼器及驅動器1714. . . Character line/block selection decoder and driver
1716...字元線1716. . . Word line
1718...位元線解碼器1718. . . Bit line decoder
1720...位元線1720. . . Bit line
1722、1726...匯流排1722, 1726. . . Busbar
1724...感應放大器與資料輸入結構1724. . . Amplifier and data input structure
1728...資料輸入線1728. . . Data input line
1732...資料輸出線1732. . . Data output line
1736...偏壓調整供應電壓電流源1736. . . Bias adjustment supply voltage current source
1734...狀態機構及時鐘電路1734. . . State mechanism and clock circuit
本發明係由申請專利範圍所界定。這些和其它目的,特徵,和實施例,會在下列實施方式的章節中搭配圖式被描述,其中:The invention is defined by the scope of the patent application. These and other objects, features, and embodiments are described in the following sections of the accompanying drawings, in which:
第1圖顯示一具有例如是溫度、接地電壓或是電源電壓變動承受能力的積體電路時鐘電路之方塊示意圖。Figure 1 shows a block diagram of an integrated circuit clock circuit having, for example, temperature, ground voltage, or power supply voltage variation tolerance.
第2A和2B圖顯示一具有對溫度變動承受能力的積體電路時鐘電路之電路示意圖,其包含一反相電路以評估時序電路的輸出,其中第2A圖具有電容性時序電路與地耦接而第2B圖具有電容性時序電路與電源耦接。2A and 2B are circuit diagrams showing an integrated circuit clock circuit having tolerance to temperature fluctuations, including an inverting circuit for evaluating the output of the sequential circuit, wherein FIG. 2A has a capacitive sequential circuit coupled to the ground. Figure 2B has a capacitive sequential circuit coupled to the power supply.
第2C圖顯示具有對溫度變動承受能力的積體電路時鐘電路之電路示意圖,其與第2A圖類似,但是自一PTAT電源接收電源而不是從CTAT電源。Figure 2C shows a circuit diagram of an integrated circuit clock circuit with tolerance to temperature variations, similar to Figure 2A, but receiving power from a PTAT source instead of from a CTAT source.
第2D圖顯示一具有對溫度變動承受能力的積體電路時鐘電路之電路示意圖,其包含一施密特觸發電路以評估此時序電路的輸出。Figure 2D shows a circuit schematic of an integrated circuit clock circuit with tolerance to temperature variations, including a Schmitt trigger circuit to evaluate the output of the sequential circuit.
第2E圖顯示一施密特觸發電路的示意圖,例如在第2D圖中。Figure 2E shows a schematic diagram of a Schmitt trigger circuit, such as in Figure 2D.
第3A和3B圖顯示一具有對溫度變動承受能力的積體電路時鐘電路之電路示意圖,其包含一運算放大器電路以藉由比較輸出與一參考值來執行時序電路輸出的準位偵測,其中第3A圖具有電容性時序電路與地耦接而第3B圖具有電容性時序電路與電源耦接。3A and 3B are circuit diagrams showing an integrated circuit clock circuit having tolerance to temperature fluctuations, including an operational amplifier circuit for performing level detection of the output of the sequential circuit by comparing the output with a reference value, wherein Figure 3A has a capacitive sequential circuit coupled to ground and Figure 3B has a capacitive sequential circuit coupled to the power supply.
第4A圖顯示準位偵測電路的參考信號之電路示意圖,其包含一具有隨著溫度的增加而減少電流輸出的PTAT電流源。Fig. 4A is a circuit diagram showing a reference signal of a level detecting circuit including a PTAT current source having a reduced current output as temperature increases.
第4B圖顯示準位偵測電路的參考信號之電路示意圖,其包含一具有隨著溫度的增加而增加電流輸出的CTAT電流源。Figure 4B is a circuit diagram showing a reference signal of a level detection circuit including a CTAT current source having an increased current output as temperature increases.
第4C圖顯示準位偵測電路的參考信號之電路示意圖,其包含一具有隨著溫度的增加而減少電流輸出的PTAT電流源,且更具有一電容器與一電流鏡的負載電阻並聯。Fig. 4C is a circuit diagram showing a reference signal of the level detecting circuit, which includes a PTAT current source having a reduced current output as the temperature increases, and further having a capacitor in parallel with the load resistance of a current mirror.
第4D圖是一電流發生器的示意圖,其根據參考電路自PMOS裝置提供PTAT電流。Figure 4D is a schematic diagram of a current generator that provides PTAT current from a PMOS device in accordance with a reference circuit.
第4E圖是一電流發生器的示意圖,其根據參考電路自NMOS裝置提供PTAT電流。Figure 4E is a schematic diagram of a current generator that provides PTAT current from an NMOS device in accordance with a reference circuit.
第4F圖是一電流發生器的示意圖,其根據參考電路自PMOS裝置提供CTAT電流。Figure 4F is a schematic diagram of a current generator that provides CTAT current from a PMOS device in accordance with a reference circuit.
第4G圖是一電流發生器的示意圖,其根據參考電路自NMOS裝置提供CTAT電流。Figure 4G is a schematic diagram of a current generator that provides CTAT current from an NMOS device in accordance with a reference circuit.
第5A圖顯示準位偵測電路的參考信號之電路示意圖,其包含一具有隨著溫度的增加而降低電流輸出的電流源,及一隨著溫度的增加而降低的輸出。Fig. 5A is a circuit diagram showing a reference signal of the level detecting circuit, which includes a current source having a reduced current output as the temperature increases, and an output which decreases as the temperature increases.
第5B圖顯示準位偵測電路的參考信號之電路示意圖,其包含一具有隨著溫度的增加而增加電流輸出的電流源,及一隨著溫度的增加而增加的輸出。Fig. 5B is a circuit diagram showing a reference signal of the level detecting circuit, which includes a current source having an increased current output as the temperature increases, and an output which increases as the temperature increases.
第5C圖顯示準位偵測電路的參考信號之電路示意圖,其包含一具有隨著溫度的增加而降低電流輸出的電流源,及一隨著溫度的增加而增加的輸出。Figure 5C is a circuit diagram showing a reference signal of a level detecting circuit including a current source having a reduced current output as temperature increases, and an output that increases as temperature increases.
第5D圖顯示如同第5C圖的準位偵測電路的參考信號之電路示意圖,但是包含一具有隨著溫度的增加而增加電流輸出的電流源。Fig. 5D is a circuit diagram showing a reference signal of the level detecting circuit of Fig. 5C, but including a current source having an increased current output as temperature increases.
第5E圖是第5C圖電路的一個變異,其中CTAT_I定電流源526由電阻RES 524所取代。Figure 5E is a variation of the circuit of Figure 5C in which the CTAT_I constant current source 526 is replaced by a resistor RES 524.
第6A圖顯示一組時間與上昇大小關係的軌跡曲線,其顯示此時鐘電路是如何具有溫度變動承受能力,其產生時鐘時序可以隨著溫度的改變而大幅地改變。Figure 6A shows a set of trajectory curves of time versus rise magnitude, showing how this clock circuit has temperature variation tolerance, and its resulting clock timing can vary greatly with temperature.
第6B圖顯示一組時間與上昇大小關係的軌跡曲線,其顯示此時鐘電路是如何具有溫度變動承受能力,因為使用第2到5圖中所示的電路,其產生時鐘時序基本上不隨著溫度的改變而改變。Figure 6B shows a set of trajectory curves of time versus rise magnitude, showing how this clock circuit has temperature variation tolerance, because using the circuits shown in Figures 2 through 5, the clock timing generated is essentially not The temperature changes and changes.
第7A圖顯示一組時間與下降大小關係的軌跡曲線,其顯示此時鐘電路是如何具有溫度變動承受能力,其產生時鐘時序可以隨著溫度的改變而大幅地改變。Figure 7A shows a set of trajectory curves of time versus descent magnitude, showing how this clock circuit has temperature variation tolerance, and its resulting clock timing can vary greatly with temperature.
第7B圖顯示一組時間與下降大小關係的軌跡曲線,其顯示此時鐘電路是如何具有溫度變動承受能力,因為使用第2到5圖中所示的電路,其產生時鐘時序基本上不隨著溫度的改變而改變。Figure 7B shows a set of trajectory curves for the relationship between time and drop size, showing how this clock circuit has temperature variation tolerance, because using the circuit shown in Figures 2 through 5, the clock timing generated is essentially not The temperature changes and changes.
第8A和8B圖顯示一具有對接地雜訊變動承受能力的積體電路時鐘電路之電路示意圖,其包含一電晶體選擇性的與接地雜訊耦接,以作為此時序電路輸出的準位偵測之參考信號的一部分,其中第8A圖具有電容性時序電路與地耦接而第8B圖具有電容性時序電路與電源耦接。8A and 8B are circuit diagrams showing an integrated circuit clock circuit having a capability to withstand ground noise fluctuations, including a transistor selectively coupled to ground noise to serve as a level detector for the output of the sequential circuit. A portion of the reference signal is measured, wherein the 8A diagram has a capacitive sequential circuit coupled to ground and the 8B diagram has a capacitive sequential circuit coupled to the power supply.
第9圖為一組電壓與時間的關係圖,其顯示此時鐘電路是如何具有對接地雜訊變動的承受能力,其產生時鐘時序可以對隨著時間改變的接地雜訊而大幅地改變。Figure 9 is a plot of voltage vs. time showing how the clock circuit has the ability to withstand ground noise variations, and the clock timing that can be generated can vary greatly with respect to ground noise that changes over time.
第10圖為一組電壓與時間的關係圖,其顯示此時鐘電路是如何具有對接地雜訊變動的承受能力,其因為第8圖中的電路而可以在對隨著時間改變的接地雜訊中產生相對穩定的時鐘時序。Figure 10 is a set of voltage vs. time graphs showing how the clock circuit has the ability to withstand ground noise variations. Because of the circuit in Figure 8, the ground noise can be changed over time. A relatively stable clock timing is generated.
第11A和11B圖顯示一具有對電源雜訊變動承受能力的積體電路時鐘電路之電路示意圖,其包含一電晶體與時序電路電源之電源雜訊及時序電路輸出的準位偵測之參考信號的電源雜訊共同分享之雜訊相位,其中第11A圖具有電容性時序電路與地耦接而第11B圖具有電容性時序電路與電源耦接。11A and 11B are circuit diagrams showing an integrated circuit clock circuit having power supply noise tolerance capability, including a power supply for the transistor and the timing circuit power supply, and a reference signal for the level detection of the output of the sequential circuit. The power supply noise shares the noise phase, wherein the 11A picture has a capacitive sequential circuit coupled to the ground and the 11B picture has a capacitive sequential circuit coupled to the power supply.
第12圖顯示一電源電路的電路圖,其與時序電路電源之電源雜訊及時序電路輸出的準位偵測之參考信號的電源雜訊分享相同的雜訊相位。Figure 12 shows a circuit diagram of a power supply circuit that shares the same noise phase as the power supply noise of the timing circuit power supply and the power supply noise of the reference signal of the timing circuit output.
第13圖為一組電壓與時間的關係圖,其顯示因為如第11圖或第12圖中的電路關係,如何在時序電路電源與使用於時序電路輸出的準位偵測之參考信號之間具有相同的雜訊相位。Figure 13 is a set of voltage vs. time graphs showing how the timing circuit power supply and the reference signal used for the level detection of the output of the sequential circuit are compared between the timing signals as shown in Fig. 11 or Fig. 12. Have the same noise phase.
第14圖為一組電壓與時間的關係圖,其顯示此時鐘電路是如何具有對電源雜訊變動的承受能力,其可以在對隨著時間大幅改變的電源雜訊中產生時鐘時序。Figure 14 is a plot of voltage vs. time showing how this clock circuit has the ability to withstand power supply noise fluctuations, which can generate clock timing in power supply noise that changes significantly over time.
第15圖為一組電壓與時間的關係圖,其顯示此時鐘電路是如何具有對電源雜訊變動的承受能力,其因為第11圖和第12圖中的電路而可以在對隨著時間大幅改變的電源雜訊中產生相對穩定的時鐘時序。Figure 15 is a set of voltage vs. time graphs showing how the clock circuit has the ability to withstand power supply noise fluctuations, which can be significantly greater over time due to the circuits in Figures 11 and 12. A relatively stable clock timing is produced in the changed power supply noise.
第16A和16B圖顯示一具有對電源雜訊變動承受能力的積體電路時鐘電路之電路示意圖,其包含一電晶體與時序電路電源之電源雜訊及時序電路輸出的準位偵測之參考信號的電源雜訊共同分享之雜訊相位,與第11圖類似,且增加了切換電路,例如在電源開啟時以選擇性地繞過此雜訊容忍電路。16A and 16B are circuit diagrams showing an integrated circuit clock circuit having power supply noise tolerance capability, including a power supply noise of a transistor and a sequential circuit power supply, and a reference signal for the level detection of the output of the sequential circuit. The noise phase shared by the power supply noise is similar to that of Figure 11, and a switching circuit is added, such as selectively bypassing the noise tolerance circuit when the power is turned on.
第17圖係可應用本發明具有改良積體電路時鐘電路之一記憶電路的方塊示意圖。Figure 17 is a block diagram showing a memory circuit of the present invention having an improved integrated circuit clock circuit.
第18圖為一電路圖,其類似於第16圖,顯示一具有對電源雜訊變動承受能力的積體電路時鐘電路之電路示意圖,且更包含切換電路介於參考產生器及運算放大器之間。Figure 18 is a circuit diagram similar to Figure 16, showing a circuit diagram of an integrated circuit clock circuit having tolerance to power supply noise fluctuations, and further including a switching circuit between the reference generator and the operational amplifier.
102...時序電路102. . . Sequential circuit
104...準位切換電路104. . . Level switching circuit
106...栓鎖電路106. . . Latch circuit
108...回授信號108. . . Feedback signal
110...時鐘信號110. . . Clock signal
112...準位切換參考值112. . . Level switching reference value
114...時序電路參考值114. . . Sequential circuit reference
116...產生具有訊的溫度補償準位切換參考值及時序電路參考值之電路116. . . Generating a circuit with a temperature compensation level switching reference value and a timing circuit reference value
118...選擇性地與雜訊耦接之電路118. . . a circuit selectively coupled to noise
Claims (24)
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| TWI388126B true TWI388126B (en) | 2013-03-01 |
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