1375663 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種利用雷射劃線加工之貼合玻璃基板 之加工方法。 此處，所謂雷射劃線加工係指如下加工：使藉由照射 雷射光束而形成於基板上之光束點相對移動，以軟化溫度 以下之溫度對基板進行局部加熱，其後使其冷卻（自然冷卻 或強制冷卻）’藉此使基板產生深度方向之溫度差，利用由 δ亥溫度差引起之應力梯度而形成劃線。 又’所謂劃線’係指形成於基板面上之線狀之裂縫。 此外，於以下之說明中，劃線係指裂縫之下端於基板内停 止之深度有限之裂縫，貫通基板之裂縫（完全切斷基板之裂 縫）不屬於劃線。 【先前技術】 液晶顯示器、電漿顯示器等之平板顯示器（以下稱作 FPD(Flat Panel Display))係於大面積之貼合玻璃基板上，預 ' 先形成複數個逐一作為FPD之單位顯示基板，其後分割每 個單位顯示基板’以此方式進行量產。 例如，於液晶顯示器中，使用兩片大面積玻璃基板（母 基板），於其中一個基板上圖案化形成彩色濾光片（cf，c〇l〇r Filter)，於另一個基板上圖案化形成驅動液晶之TFT(Thin film Transistor，薄膜電晶體）以及用於外部連接之端子部。 接著，將上述兩片基板以各自之圖案形成面為内側彼此貼 3 1375663 合，藉此形成大面積之貼合某 丞板。其後，經由將大面積之 貼合基板分割為各個單位龜_ 早位顯不基板之步驟，藉此製造液晶 顯示器。 自大面積貼合基板切出單位顯示基板之分割步驟，至 今為止’已可藉由各種加工方法來實施。 例如，可利用以特定順序進行如下步驟之分割方法： 了面將刀輪塵接於大面積貼合基板一面使該刀輪移動， =於貼合基板上刻畫出劃線；以及沿著已形成之劃線施加 萼曲力矩，以使上述大面積貼合基板機械性斷裂(參照專利 文獻1)。 對於組合有刀輪之壓接步驟及藉由施加㈣力矩而進 行之斷裂步驟之分割方法而t，當欲分割之基板之板厚較 薄或較厚之情形時，均可藉由對刀輪之刀尖形狀及壓接負 載進行調整而確實地進行分割。 、 又，作為其他方法，已揭示有包括以下步驟之分割方 法.（1)於貼合前，藉由雷射劃線加工而分別於FPD用之一 對CF基板用母玻璃及TFT基板用母玻璃上形成劃線；（2) 繼而，將形成有劃線之CF基板用母玻璃及TFT基板用母玻 璃相互貼合（此時，可以形成有劃線之面處於内側之方式進 行貼合’亦可以上述面處於外側之方式進行貼合）；（3)其 後’依序分別對CF基板用母玻璃及TFT基板用母玻璃谁耔 分割（參照專利文獻2)。 根據該方法，由於無需於母玻璃彼此貼合之狀態下形 成劃線’因此不易受到黏住兩片母玻璃之密封材料之影 1375663 響，從而可穩定且準確地形成劃線。 根據該方法，由於藉由不會產生玻璃屑之雷射劃 :加工來形成劃線，故即使於貼合步驟之前之步驟中形成 』線’於貼合面上亦不會產生由於產生玻璃屑而引起之 題0 進而與其他加工方法相比，藉由雷射劃線加工而形 成之劃線之端面品質、#面強度非常優異，故可提高分割 面之端面品質。 又，作為其他方法’已揭示有利用蝕刻步驟之切斷分 離方法（參照專利文獻3)。根據該方法，進行將雷射彙聚於 玻璃内部而使玻璃内部變f之步驟，其後進㈣刻步驟。' 進打蝕刻步驟時，因蝕刻液會滲入至變質區域（微裂縫區 域）’故可提高變質區域之#刻速度。藉此，無需進行長時 間之餘刻’即可將玻璃切斷分離。 亦即，根據專利文獻3,如圖2⑷所*，若使利用密封 劑26而經貼合之玻璃板21、22與蝕刻液接觸，則玻璃板 21、22受到蝕刻。不久之後，當蝕刻到達玻璃板Μ、u内 部之變質區域23時，會於變質區域23形成微裂縫，蝕刻 浪滲入至該微裂縫中，藉此，變質區域23之蝕刻速度會快 於#變質區域，與其他區域相較，該變質區域23會更快土 受到蝕刻。並且，如圖2(b)所示，藉由蝕刻而將變質區^ 23完全地切斷分離。 根據專利文獻3,進而如圖2(c)所示，若藉由輪式切割 機或雷射照射而預先於單片之玻璃板27形成劃線，' °、 貝！於 5 1375663 其後之钱刻步驟中，書1丨。JO· -r* i <· 《 到線28之下端受到蝕刻（即蝕刻劃線内 X到蝕刻）’不久之後，當上述蝕刻液到達變質區域29時， ㈣速度加快。並且，如圖2(d)所示，變質區域29與劃線 28 —併受到蝕刻而完全分離。 [專利文獻1]日本特開平6_48755號公報 [專利文獻2]日本特開2〇〇4·157145號公報 [專利文獻3]曰本特開2〇〇5·21996〇號公報 【發明内容】 平板顯示器（FPD)中，顯示器之薄型化係為市場之需 •托並力實現FPD之薄型化之基礎上，要求用貼 合玻璃基板之薄板化。 一般而言，玻璃基板有隨著基板之板厚越薄對基板進 行分割之難度則越高的傾向。當於製造步驟中包含自大面 積貼合玻璃基板切出單位顯示基板(小面積貼合玻璃基板) 之分割步驟時，為了實現貼合玻璃基板之薄板化，必需同 時考慮分割步驟》 上述專利文獻1中揭示之組合有利用刀輪之壓接步驟 及藉由施加彎曲力矩而進行之斷裂步驟之分割方法具有如 下優點：根據基板之板厚而對刀輪之刀尖形狀或壓接負載 2行調整’藉此，於板厚較薄或較厚之情形時，均能夠可 靠地進行分割。 然而，有時會因刀輪之壓接而產生切屑，且切斷端面 會產生裂紋，若與藉由雷射劃線加工所形成之端面相比 1375663 較’則端面強度 '端面品質會產生差異…於形成劃線 後之斷裂步驟時，必需利用切斷條等機械式地施加力，此 情形下有時會產生玻璃屑。 另一方面，根據專利文獻2所揭示之方法，即藉由雷 射劃線加工而形成劃線，繼而使基板用玻璃相互貼合，其 後將基板用玻璃切斷，不僅可形成穩定且準確之劃線，且 與利用刀輪而形成之端面相比較，端面強度、端面品質亦 格外優異。 然而，若基板之板厚㈣，則難以進行該雷射劃線加 工。即，為了利用雷射劃線加工而於玻璃基板形成劃線， 原理上必需使基板内部產生深度方向之溫度差，從而形成 基於溫度差之應力梯度。對於板厚為lmm以上之玻璃基板 而言’容易藉由光束點使基板内部產生溫度差，可容易地 於基板内部形成應力梯度，故可形成劃線，但隨著板厚變 薄’難以產生深度方向之溫度差。具體而言，若板厚為！麵 以下，則可形成劃線之雷射照射條件逐步受到限制，進而 若板厚變薄至o.4mm以下，則非常難以藉由雷射照射而產 生深度方向之溫度差，其結果為，可利用雷射劃線加工來 形成劃線之條件極其苛刻，不適於實際使用。 關於基板之板厚變薄則難以形成劃線之理由，藉由與 板厚較厚之情形進行比較來說明。首先，對板厚較厚之玻 璃基板GA之情形加以說明1 3⑷係用以說明雷射昭射時 (加熱時）之示意圖’圖3(b)係用以說明加熱後喷射冷媒而進 行冷卻時之示意圖，圖3(〇係用以說明產生劃線（裂縫）時之 7 1375663 基板剖面上之溫度分布之示意圖。 於厚基板GA中，藉由光束點之經過而進行加熱，藉此 如圖3(a)所示，於基板内部形成加熱部位hr,加熱部位HR 局部膨脹，從而產生壓縮應力（圖中以虛線箭頭表示）。此 外，圖中為了便於說明，誇大地表示了基板GA產生之變形。 繼而，稍後藉由冷卻點（被喷射冷媒之區域）之經過而產 生冷熱，藉此，如圖3(b)所示，於表面附近形成冷卻部位 CR，冷卻部位CR局部收縮，從而產生拉伸應力（圖中以實 線箭頭表示）。 於厚基板GA之情形時，由於基板較厚，故形成冷卻部 位CR時，加熱部位HR不會達到背面，成為加熱部位HR 停留於基板内部之狀態。 並且，如圖3(c)所示，冷卻部位CR存在於基板上面附 近’加熱部位HR存在於該冷卻部位Cr之下方。由於該加 熱部位HR已產生壓縮應力，故成為於基板内部存在内部壓 縮應力場Hin之狀態。 於基板GA形成内部壓縮應力場Hin，且於基板之 上面附近形成拉伸應力，藉此於厚板基板GA上局部地產生 上凸之應變，在基板上面產生使基板往與拉伸應力相同之 方向彎曲之力（圖中以一點鎖線箭頭表示）。 其結果為，於基板GA之上面，藉由拉伸應力以及使 基板以上凸之方式彎曲之力，在始於基板上表面之厚度方 向（深度方向）上形成垂直之劃線C(裂縫）。 此外，如上所述，於基板GA之内部形成有内部壓縮應 1375663 力場mn，因此當劃線C(裂缝）之前端到達該内部壓縮應力 場時，由於該内部壓縮應力場而阻礙劃線。(裂縫)之前端 更深處進展，故劃線C(裂縫）停止。 藉此，於基板GA之雷射劃線加工中，形成深度有限之 劃線C(裂縫）。以如此之方式所形成之劃線c(裂縫）之端面 品質優異，以切剖面而言為理想狀熊。1375663 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a processing method of a laminated glass substrate processed by laser scribing. Here, the laser scribing process refers to a process in which a beam spot formed on a substrate by irradiating a laser beam is relatively moved, and the substrate is locally heated at a temperature lower than a softening temperature, and then cooled ( Natural cooling or forced cooling) 'There is a temperature difference in the depth direction of the substrate, and a scribe line is formed by the stress gradient caused by the temperature difference of δ hai. Further, the term "line" means a linear crack formed on the surface of the substrate. Further, in the following description, the scribing means a crack having a limited depth at which the lower end of the slit is stopped in the substrate, and the crack penetrating through the substrate (completely cutting the crack of the substrate) does not belong to the scribe line. [Prior Art] A flat panel display (hereinafter referred to as an FPD (Flat Panel Display)) such as a liquid crystal display or a plasma display is attached to a large-area bonded glass substrate, and a plurality of unit display substrates are formed as FPDs one by one. Subsequent division of each unit display substrate 'mass production in this manner. For example, in a liquid crystal display, two large-area glass substrates (mother substrates) are used, and a color filter (cf, c〇l〇r Filter) is patterned on one of the substrates, and patterned on the other substrate. A TFT for driving a liquid crystal (Thin Film Transistor) and a terminal portion for external connection. Next, the two substrates are bonded to each other on the inner side of the pattern forming surface, thereby forming a large-area bonding surface. Thereafter, a liquid crystal display is manufactured by dividing a large-area bonded substrate into individual unit turtles to display substrates. The step of dividing the unit display substrate from the large-area bonded substrate can be carried out by various processing methods until now. For example, the method of dividing the following steps in a specific order may be used: the cutter wheel is connected to the large-area bonded substrate to move the cutter wheel, and the scribe line is drawn on the bonded substrate; The scribing torque is applied to the scribing line to mechanically break the large-area bonded substrate (see Patent Document 1). For the step of crimping the combination of the cutter wheel and the step of breaking by applying the (four) moment, t, when the thickness of the substrate to be divided is thin or thick, the cutter wheel can be used The blade tip shape and the crimping load are adjusted to be surely divided. Further, as another method, a division method including the following steps has been disclosed. (1) Prior to bonding, a mother glass for a CF substrate and a mother substrate for a TFT substrate are respectively used for FPD by laser scribing. A scribe line is formed on the glass, and (2) the mother glass for the CF substrate on which the scribe line is formed and the mother glass for the TFT substrate are bonded to each other (in this case, the scribe line may be formed to be inside). (3) The mother glass for the CF substrate and the mother glass for the TFT substrate are sequentially divided (see Patent Document 2). According to this method, since it is not necessary to form the scribe line in the state in which the mother glass is bonded to each other, it is less likely to be affected by the sealing material of the two mother glass sheets, which is 1375663, so that the scribe line can be stably and accurately formed. According to this method, since the scribing is formed by the laser shaving without the occurrence of the glass shavings, the formation of the "line" on the bonding surface does not occur due to the generation of the glass shavings even in the step before the laminating step. Further, the problem 0 caused by the laser scribing process is superior to the other processing methods, and the surface quality of the scribe line formed by the laser scribing process is excellent, so that the end face quality of the split surface can be improved. Further, as another method, a cutting separation method using an etching step has been disclosed (see Patent Document 3). According to this method, a step of concentrating the laser inside the glass to change the inside of the glass is performed, followed by a (four) etching step. When the etching step is advanced, the etching liquid penetrates into the metamorphic region (micro-crack region), so that the etch rate of the metamorphic region can be improved. Thereby, the glass can be cut and separated without having to carry out a long time. That is, according to Patent Document 3, as shown in Fig. 2 (4), when the glass sheets 21 and 22 bonded by the sealant 26 are brought into contact with the etching liquid, the glass sheets 21 and 22 are etched. Soon after, when the etching reaches the metamorphic region 23 inside the glass plate u and u, micro cracks are formed in the metamorphic region 23, and the etching wave penetrates into the micro crack, whereby the etched region 23 is etched faster than ## In the region, the metamorphic region 23 will be etched faster than other regions. Further, as shown in Fig. 2(b), the metamorphic region 23 is completely cut and separated by etching. According to Patent Document 3, as shown in Fig. 2(c), a scribe line is formed in advance on a single piece of glass plate 27 by a wheel cutter or laser irradiation, '°, Beck! In 5 1375663, in the subsequent steps of the money, the book 1丨. JO· -r* i <· "After the end of the line 28 is etched (i.e., etched in the scribe line X to etch)", the etchant reaches the metamorphic region 29, and the speed is increased. Further, as shown in Fig. 2(d), the modified region 29 and the scribe line 28 are etched and completely separated. [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A No. Hei. No. Hei. No. Hei. No. Hei. In the display (FPD), the thinness of the display is required by the market. On the basis of the thinning of the FPD, the thinning of the laminated glass substrate is required. In general, the glass substrate tends to have a higher difficulty in dividing the substrate as the thickness of the substrate becomes thinner. When the manufacturing step includes a step of dividing a unit display substrate (small-area bonded glass substrate) from a large-area bonded glass substrate, in order to realize thinning of the bonded glass substrate, it is necessary to simultaneously consider the division step. The combination method disclosed in 1 has a crimping step using a cutter wheel and a splitting step by applying a bending moment, and has the following advantages: the blade tip shape of the cutter wheel or the crimping load 2 rows according to the thickness of the substrate Adjustment 'By this, the segmentation can be reliably performed when the plate thickness is thin or thick. However, sometimes chips are generated due to the crimping of the cutter wheel, and cracks are generated at the cut end faces. If the end face is formed by the laser scribing process, the thickness of the end face is different from that of the 1472566. When forming the scission step after scribing, it is necessary to apply a force mechanically by a dicing bar or the like, in which case glass swarf may be generated. On the other hand, according to the method disclosed in Patent Document 2, a scribe line is formed by laser scribing, and then the substrates are bonded to each other by glass, and then the substrate is cut by glass, which is stable and accurate. The scribe line is excellent in end face strength and end face quality as compared with the end face formed by the cutter wheel. However, if the thickness of the substrate is (4), it is difficult to perform the laser scribing. That is, in order to form a scribe line on a glass substrate by laser scribing, it is necessary to form a temperature difference in the depth direction inside the substrate to form a stress gradient based on the temperature difference. For a glass substrate having a thickness of 1 mm or more, it is easy to cause a temperature difference inside the substrate by the beam spot, and a stress gradient can be easily formed inside the substrate, so that a scribe line can be formed, but as the thickness becomes thin, it is difficult to produce The temperature difference in the depth direction. Specifically, if the plate thickness is! Below the surface, the laser irradiation conditions for forming the scribe line are gradually limited, and if the thickness is reduced to less than 4.4 mm, it is very difficult to generate a temperature difference in the depth direction by laser irradiation. As a result, The conditions for forming a scribe line by laser scribing are extremely harsh and are not suitable for practical use. The reason why it is difficult to form a scribe line when the thickness of the substrate is reduced is described in comparison with the case where the thickness of the substrate is thick. First, the case of the glass substrate GA having a thick thickness is described. 1 3(4) is a schematic view for explaining the laser emission (when heating). FIG. 3(b) is for explaining the cooling when the refrigerant is sprayed after heating. Schematic diagram, Figure 3 (〇 is used to illustrate the temperature distribution on the 7 1375663 substrate cross section when the scribe line (crack) is generated. In the thick substrate GA, heating is performed by the passing of the beam spot, thereby As shown in Fig. 3(a), the heating portion hr is formed inside the substrate, and the heating portion HR is locally expanded to generate a compressive stress (indicated by a broken line arrow in the drawing). Further, for convenience of explanation, the substrate GA is shown exaggeratedly. Then, the cooling heat is generated by the passage of the cooling point (the area where the refrigerant is sprayed), whereby the cooling portion CR is formed in the vicinity of the surface as shown in FIG. 3(b), and the cooling portion CR is locally shrunk. Tensile stress is generated (indicated by a solid arrow in the figure). In the case of a thick substrate GA, since the substrate is thick, when the cooling portion CR is formed, the heating portion HR does not reach the back surface, and the heating portion HR stays. In the state of the inside of the substrate, as shown in Fig. 3(c), the cooling portion CR exists in the vicinity of the upper surface of the substrate. The heating portion HR exists below the cooling portion Cr. Since the heating portion HR has a compressive stress, it becomes A state of the internal compressive stress field Hin exists in the substrate. An internal compressive stress field Hin is formed on the substrate GA, and a tensile stress is formed in the vicinity of the upper surface of the substrate, thereby locally generating a convex strain on the thick substrate GA, on the substrate. The force for bending the substrate in the same direction as the tensile stress is generated (indicated by a dot line arrow). As a result, the force is bent on the upper surface of the substrate GA by the tensile stress and the convexity of the substrate. A vertical scribe line C (crack) is formed in the thickness direction (depth direction) from the upper surface of the substrate. Further, as described above, an internal compression should be formed inside the substrate GA 1375663 force field mn, so when scribe When the front end of C (crack) reaches the internal compressive stress field, the scribing is hindered due to the internal compressive stress field. (The crack) progresses deeper at the front end, so the scribe line C (crack) Therefore, in the laser scribing process of the substrate GA, a scribe line C (crack) having a limited depth is formed. The end surface of the scribe line c (crack) formed in such a manner is excellent in quality, and is cut in cross section. It is an ideal bear.
其次，對板厚較薄之玻璃基板GB加以說明。圖4⑷ 係用以說明雷射照射時（加熱時）之示意圖，0购係用以說 明加熱後噴射冷媒而進行冷卻時之示意圖，圖_係用㈣ 明圖4(b)之後之基板剖面上之溫度分布之示意圖。 於基板GB中，藉由光束點之經過而進行加熱，藉此， 如圖4⑷所示’雖會於基板内部形成加熱部位hr並產生麗 縮應力.（圖中以虛線箭頭表示），但由於板厚較薄，故加熱部 位HR‘立刻到達背面。到達背面後之加熱部位狀之一部分 與下面脫離’所產生之壓縮應力變弱。 繼而，藉由冷卻點CS之經過而產生冷熱，藉此，如圖 4(b)所示，於表面附近形成冷卻部位CR，冷卻部位cR立 刻會到達基板GB之中央。此時，加熱部位HR變弱，或者 幾乎消失。 進而若冷熱繼續傳遞，則如圖4(c)所示，冷卻部位CR 會到達基板GB之下表面。如此，於薄基板GBt，溫熱及 冷熱會迅速地自薄基板GB之上面傳遞至下面，因此難以形 成基板之深度方向之溫度梯度，從而難以產生由溫度梯度 所引起之應力梯度。又，即使可形成基板之厚度方向之應 9 1375663 力梯度，由於板厚較薄，故溫熱及冷熱之範圍分別較窄， 因此’各自之壓縮應力及拉伸應力之大小亦受到限定。因 此，於薄基板GB之情形時，難以形成劃線。 進而，於專利文獻2所揭示之方法之情形時即使可 藉由雷射劃線加工形成劃線，於形成劃線之後，與專利文 獻1之方法相同地，必需進行斷裂步驟。此時若機械式地 施加彎曲力矩，則仍然存在產生玻璃屑之情形。 相對於此，於專利文獻3中所揭示之方法中，即於進 行將雷射彙聚於玻璃内部而使玻璃内部變質之步驟，其後 進行玻璃蝕刻之步驟之方法中，可抑制玻璃屬之產生。/又\ 亦可藉由蝕刻而實現玻璃基板之薄板化。 然而，如圖2所示，於玻璃内部形成因照射強雷射而 受損之變質區域23(微裂縫區域）。繼而，姓刻液渗入至該 變質區域23内’藉由蝕刻而進行分割，因此存在變質區域 23作為加工端面而殘留之情形，於該情形下，端面強度、 端面品質均遜色於由雷射切割產生之端面。 若持續地蝕刻直至變質區域23被完全除去，則可消除 變質區域23之影響，因此，即便對玻璃基板進行分割之後， 仍必需對玻璃基板進行㈣直至已切實地除去了心變質 區域23為止。 因此，本發明之目的在於提供如下之加工方法：當進 行自形成有作為單位顯示基板（小面積貼合基板）之複:個 區域之大面積貼合玻璃基板上，分割出作為單位顯示基板 個區域之加工時，可形成端面品質、端面強度優異之 刀割面’且可作為經薄板化之單位顯示基板。 又，本發明之目的在於提供如下之加工方法：可製作 此夠維持優異之端面品f、端面強度且無先例之板厚較薄 之貼合玻璃基板。 用以解決上述問題之本發明之加工方法係巧妙地利用 了如下兩點者·在將兩片玻璃基板隔著狹小間隙彼此貼合 之狀態下進行加工；藉由雷射劃線加工所形成之劃線係處 於切割面彼此密著（於多數情形下’施加壓縮應力而成為封 閉裂縫狀態）’且液體等不易滲入至内部之狀態。 即，本發明之貼合玻璃基板之加工方法進行以下之步 驟。 首先，（a)針對貼合前之兩片玻璃基板各自之單側面， 藉由雷射劃線加工而於分割預定位置形成所欲深度之劃 線。當於玻璃基板上形成有功能元件等（例如液晶顯示器中 之TFT膜或彩色濾光片時，預先將進行雷射劃線加工 之側之單側面設為形成功能元件等之面。藉此’於後續步 驟中，不會使功能元件等受到蝕刻。又，利用雷射劃線加 工所形成之劃線之深度係成為於後續步驟中進行薄板化及 分割時之板厚之值，因此，預先將該深度設為所欲之值。 繼而，（b)以形成有劃線之單側面彼此為内侧將該兩片玻璃 基板加以貼合。可使用密封劑進行貼合。繼而，（c)對經貼 合之兩片玻璃基板之外側面（貼合面之相反側之面）進行餘 刻。蝕刻可為濕式蝕刻亦可為乾式蝕刻。 當對貼合玻璃基板進行钱刻之情形時，於貼合玻璃基 11 1375663 板之外侧面附近存在較多钱刻能力高之新鮮餘刻液或钱刻 氣體，而於貼合面側（形成有劃線之面），面間之間隙狹窄， 即使姓刻液或_氣體滲人至貼合面之間，亦容易滯留於 此。因此，與外側面相比較，幾乎無法進行蝕刻。而且， 藉由雷射劃線加工所形成之劃線之裂縫内係處於切割面彼 此密著且颠刻液等不易滲入至内部之狀態，故難以受到蝕 刻。因此’對於貼合破璃基板而言，冑質上係自外側面單 向地受到飯刻，從而推進基板之薄板化。並且，若蝕刻進 *專板化至到達劃線之深度為止，則劃線成為端面而被 分割。藉此，可獲得由雷射劃線加工所形成之劃線成為端 面之經薄板化之貼合玻璃基板。此外，即便預先形成較深 之劃線’使貼合玻璃基板薄板化並對其進行分割之後，亦 可繼續進行蝕刻直至兩片玻璃基板達到所欲之板厚為止。 根據本發明，被分割為小面積之貼合玻璃基板（單位顯 :基板）之端面係藉由雷射劃線加工時之端面而形成，因此 可製造具有端面品質、端面強度優異之加工面之薄板化貼 合玻璃基板。 μ於⑷步财，亦可將形成劃線之前之各玻璃基板之板 厚。X為0.4 mm〜2 mm。如上所述，為了能夠藉由雷射劃線 加工而形成劃線’必、需具有一定以上之板厚，可藉由使用 。亥數值紅圍之板厚之玻璃基板而實施雷射劃線加工，且能 夠以適當之姓刻時間分割貼合玻璃基板。 又，於U)步驟中，亦可將所要形成之劃線之深度設為 0 01 贿〜0‘2 mm。Next, the glass substrate GB having a thin plate thickness will be described. Figure 4 (4) is used to illustrate the schematic diagram of the laser irradiation (when heating), 0 is used to illustrate the cooling when the cooling agent is sprayed and cooled, Figure _ is used (4) on the substrate section after 4 (b) Schematic diagram of the temperature distribution. In the substrate GB, heating is performed by the passing of the beam spot, whereby as shown in Fig. 4 (4), the heating portion hr is formed inside the substrate and the refraction stress is generated (indicated by a broken line arrow in the figure), but The thickness of the plate is thin, so the heated portion HR' immediately reaches the back. The compressive stress generated by the fact that one portion of the heated portion after reaching the back surface is separated from the lower portion becomes weak. Then, by the passage of the cooling point CS, cold heat is generated, whereby as shown in Fig. 4(b), the cooling portion CR is formed in the vicinity of the surface, and the cooling portion cR immediately reaches the center of the substrate GB. At this time, the heating portion HR becomes weak or almost disappears. Further, if the cold heat continues to be transmitted, as shown in FIG. 4(c), the cooling portion CR reaches the lower surface of the substrate GB. Thus, in the thin substrate GBt, the warmth and the cold heat are rapidly transferred from the upper surface of the thin substrate GB to the lower surface, so that it is difficult to form a temperature gradient in the depth direction of the substrate, so that it is difficult to generate a stress gradient caused by the temperature gradient. Further, even if a force gradient of 9 1375663 can be formed in the thickness direction of the substrate, since the thickness of the plate is thin, the ranges of warming and cold heat are narrow, respectively, and therefore the respective compressive stress and tensile stress are also limited. Therefore, in the case of the thin substrate GB, it is difficult to form a scribe line. Further, in the case of the method disclosed in Patent Document 2, even if the scribe line can be formed by laser scribing, after forming the scribe line, it is necessary to perform the splicing step as in the method of Patent Document 1. At this time, if a bending moment is mechanically applied, there is still a case where glass swarf is generated. On the other hand, in the method disclosed in Patent Document 3, the method of concentrating the laser inside the glass to deteriorate the inside of the glass, and then performing the step of glass etching, can suppress the generation of the glass genus. . / Further \ The thinning of the glass substrate can also be achieved by etching. However, as shown in Fig. 2, a deteriorated region 23 (microcrack region) which is damaged by irradiation with a strong laser is formed inside the glass. Then, the surname engraved into the metamorphic region 23 is divided by etching, so that the modified region 23 remains as the processed end face, and in this case, the end face strength and the end face quality are inferior to those by laser cutting. The end face produced. If the etching is continued until the modified region 23 is completely removed, the influence of the modified region 23 can be eliminated. Therefore, even after the glass substrate is divided, it is necessary to perform (4) on the glass substrate until the cardiac altered region 23 has been reliably removed. Therefore, an object of the present invention is to provide a processing method in which a large-area bonded glass substrate on which a plurality of regions including a unit display substrate (small-area bonded substrate) are formed is formed, and the unit display substrate is divided. In the processing of the region, a blade cutting surface having excellent end surface quality and end surface strength can be formed and can be used as a unit display substrate which is thinned. Further, an object of the present invention is to provide a processing method capable of producing a bonded glass substrate which is excellent in the end face product f and the end face strength and which has a small thickness. The processing method of the present invention for solving the above problems is skillfully utilized in the following two aspects: processing in a state in which two glass substrates are bonded to each other with a narrow gap therebetween; and formed by laser scribing processing The scribing line is in a state in which the cut surfaces are in close contact with each other (in many cases, 'compressive stress is applied to be in a closed crack state)', and liquid or the like is less likely to penetrate into the inside. That is, the method for processing a laminated glass substrate of the present invention is carried out in the following steps. First, (a) for each side surface of each of the two glass substrates before bonding, a desired depth is formed at a predetermined position by laser scribing. When a functional element or the like (for example, a TFT film or a color filter in a liquid crystal display) is formed on a glass substrate, a single side surface on which the laser scribing process is performed is previously formed as a surface on which a functional element or the like is formed. In the subsequent step, the functional element or the like is not etched. Further, the depth of the scribe line formed by the laser scribing process is a value of the thickness of the slab during the subsequent step of thinning and dividing, and therefore, The depth is set to a desired value. Then, (b) the two glass substrates are bonded to each other on the inner side on which the scribe lines are formed. The sealant can be used for bonding. Then, (c) The outer surface of the two glass substrates to be bonded (the surface on the opposite side of the bonding surface) is used for the etching. The etching may be wet etching or dry etching. When the bonded glass substrate is engraved, There is a large amount of fresh residual liquid or money engraving gas near the side of the laminated glass base 11 1375663 plate, and the gap between the faces is narrow on the side of the bonding surface (the surface formed with the scribe line). Even if the surname is engraved or _ gas It is also easy to stay between the person and the bonding surface. Therefore, it is almost impossible to perform etching as compared with the outer side surface. Moreover, the cracks formed by the laser scribing process are in close contact with each other in the cut surface. In addition, it is difficult to be etched by the incision liquid or the like, and it is difficult to be etched. Therefore, in the case of bonding the glass substrate, the enamel is unidirectionally etched from the outer surface to promote the thinning of the substrate. When the etching is performed until the depth of the scribe line is reached, the scribe line is divided into end faces and divided, whereby the scribe line formed by the laser scribe line processing can be obtained as a thin plate-like affixing of the end surface. Further, even if a thin scribe line is formed in advance, the bonded glass substrate is thinned and divided, and etching can be continued until the two glass substrates reach a desired thickness. The end surface of the laminated glass substrate (unit display: substrate) which is divided into a small area is formed by the end surface at the time of laser scribing, so that it is possible to manufacture the end surface quality and the end surface strength. The thinned sheet of the machined surface is bonded to the glass substrate. μ (4) Step, the thickness of each glass substrate before the scribe line may be formed. X is 0.4 mm to 2 mm. As described above, in order to enable laser diffraction It is necessary to form a scribe line by wire processing, and it is necessary to have a certain thickness or more, and it is possible to perform laser scribing processing by using a glass substrate having a plate thickness of a red value, and it is possible to divide the time by appropriate name. In the U) step, the depth of the scribe line to be formed may also be set to 0 01 bribe to 0'2 mm.
12 1375663 藉此由於根據劃線之深度來決定經薄板化及分割之 玻璃基板之板厚’因此藉由將劃線之深度設定於該範圍 内’可製作先前難以分割之較薄之貼合玻璃基板。 又’於（b)步驟中，亦可將玻璃基板間之間隙寬度設為 10 V m以下。 藉此’由於玻璃基板間之間隙寬度非常狹小，故而進 入至該間隙内之蝕刻液或蝕刻氣體不會被更換而容易滯 留’可抑制貼合面側之腐蝕，從而可單向地自外側面進行 钱刻。 又’於上述發明申，貼合前之兩片玻璃基板亦可分別 於基板周緣具有端材區域，於（b)步驟中，在與各基板之端 材區域之邊界處形成劃線。 藉此’由於在基板周緣存在端材區域，故而渗入至貼 合後之玻璃基板之間隙内之蝕刻液等更容易滯留，始於内 側之蚀刻受到抑制，從而確切地自外側面進行餘刻。 【實施方式】 以下，根據圖式來對本發明之實施形態加以說明。圖1 係表示本發明之一實施形態即貼合玻璃基板之加工方法之 順序的圖。此處’以液晶顯示器之製造步驟為例進行說明。 如圖1 (a)所示，準備形成有矩陣狀之圖案之彩色遽光片 (CF)之CF用母玻璃基板1、以及形成有矩陣狀之圖案之薄 膜電晶體（TFT)之TFT用母玻璃基板2。CF用母玻璃基板1 上除了設置有彩色濾光片（CF)之外’亦設置有對向電極、定 13 1375663 位用對準標記等，又，TFT用母玻璃基板2上除了設置有薄 膜電晶體（TFT)之外，亦設置有像素電極、定位用對準標記 等0 繼而，如圖1(b)所示，藉由雷射劃線加工，而於CF用 母玻璃基板1以及TFT用母玻璃基板2上形成用以分割各 彩色滤光片（CF)、各薄膜電晶體（TFT)之劃線3、4。此外， 劃線3'4最好係形成於彩色遽光片（CF)及薄膜電晶體（τρτ) 之各圖案之整個周圍，於靠近基板端之側之邊亦形成劃線 3、4。並且，最好係於母基板丨、2之周緣部分設置端材區 域5，使得彩色濾光片（CF)或薄膜電晶體（TFT)之圖案形成 位置不會過於靠近基板端。12 1375663 Thereby, since the thickness of the thinned and divided glass substrate is determined according to the depth of the scribe line, the thinned bonding glass which was previously difficult to be divided can be produced by setting the depth of the scribe line within the range Substrate. Further, in the step (b), the gap width between the glass substrates may be set to 10 Vm or less. Therefore, since the gap width between the glass substrates is extremely narrow, the etching liquid or the etching gas which enters the gap is not easily replaced and is easily retained, and the corrosion on the bonding surface side can be suppressed, so that the unidirectional surface can be unidirectionally Make money engraving. Further, in the above invention, the two glass substrates before the bonding may have the end material regions on the periphery of the substrate, and in the step (b), the scribe lines are formed at the boundary with the end material regions of the respective substrates. By this, since the end material region exists on the periphery of the substrate, the etching liquid or the like which has penetrated into the gap between the bonded glass substrates is more likely to be retained, and the etching from the inner side is suppressed, and the remaining surface is accurately left. [Embodiment] Hereinafter, embodiments of the present invention will be described based on the drawings. Fig. 1 is a view showing the procedure of a method of processing a laminated glass substrate according to an embodiment of the present invention. Here, the manufacturing steps of the liquid crystal display will be described as an example. As shown in Fig. 1 (a), a mother glass substrate 1 for a CF having a matrix-shaped pattern of a color light-emitting sheet (CF) and a TFT for forming a thin-film transistor (TFT) having a matrix pattern are prepared. Glass substrate 2. In addition to the color filter (CF), the CF mother glass substrate 1 is provided with a counter electrode, an alignment mark for the 13 1375663 position, and a mother glass substrate 2 for the TFT. In addition to the transistor (TFT), a pixel electrode, a positioning alignment mark, and the like are also provided. Then, as shown in FIG. 1(b), the mother glass substrate 1 and the TFT for CF are processed by laser scribing. The scribe lines 3 and 4 for dividing the respective color filters (CF) and the respective thin film transistors (TFTs) are formed on the mother glass substrate 2. Further, the scribe line 3'4 is preferably formed around the entire pattern of the color grading sheet (CF) and the thin film transistor (τρτ), and the scribe lines 3, 4 are formed on the side closer to the side of the substrate. Further, it is preferable to provide the end material region 5 at the peripheral portion of the mother substrate 丨, 2 such that the pattern forming position of the color filter (CF) or the thin film transistor (TFT) is not too close to the substrate end.
只要可形成劃線，則用於加工之雷射種類並無特別限 定’例如可使用C〇2雷射PThe type of laser used for processing is not particularly limited as long as a scribe line can be formed. For example, a C 〇 2 laser P can be used.
右加工别之基板之板厚過薄，則無法進行雷射劃線 工。又，若基板之板厚過厚，則雖可形成劃線，但由於 下述蝕刻步驟中進行薄板化時需要較長時間&將上述 厚設為〇.4mm〜2mm，更佳設為臟左右。 力:工時之雷射照射條件設為一定，將各劃線之深度 為一疋。除了配合欲镇此儿> l 4板化之板厚而對雷射功率、光束 形狀進仃調整之外，亦枏 據加工前之基板之板厚而對劃 之冰度進行調整。若加工 ^月』之基板板厚處於0.4 mm〜2 ι 之範圍，則可藉由選擇 mni_n 0 伴"、、射條件而將劃線之深度設為〇, mm〜0.2 mm。If the thickness of the substrate of the right processing is too thin, the laser scribing cannot be performed. Further, when the thickness of the substrate is too thick, a scribe line may be formed. However, it takes a long time to perform thinning in the etching step described below. The thickness is preferably set to 4 mm to 2 mm, more preferably dirty. about. Force: The laser irradiation conditions for working hours are set to be constant, and the depth of each scribing is one. In addition to the adjustment of the laser power and beam shape in accordance with the thickness of the plate, the thickness of the beam is adjusted according to the thickness of the substrate before processing. If the substrate thickness of the processing ^ month is in the range of 0.4 mm to 2 ι, the depth of the scribe line can be set to 〇, mm to 0.2 mm by selecting mni_n 0 with ", and shooting conditions.
繼而 如圖1(c)所示 於CF用母玻璃基板ι或tft用 14 1375663 母玻璃基板2中之任—方之形成有劃線之侧的面上塗佈密 封幻6將形成有劃線3、4之側之面彼此貼合。 所貼合之母基板1、2間之間隙寬度設為適合於注入液 B曰之值具體而言，設為1 " m〜10 # m左右，較佳設為 以m °若間隙寬度為10 // m以下則並無特別之 問題’間隙寬度越小，則於後續步驟中滲人至間隙内之姓 刻液之滲入量越少，又，渗人至間隙内之餘刻、液不易被更 換’因此可進一步抑制形成有劃線之側之面之蝕刻。Then, as shown in FIG. 1(c), a sealing phantom 6 is formed on the surface of the parent glass substrate ι or tft of 14 1375663 mother glass substrate 2 on which the scribe line is formed, as shown in FIG. 1(c). The faces on the sides of 3 and 4 fit together. The gap width between the bonded mother substrates 1 and 2 is set to be suitable for the value of the injection liquid B. Specifically, it is about 1 " m~10 #m, preferably m°, if the gap width is There is no special problem below 10 // m. 'The smaller the gap width is, the less the infiltration amount of the surname engraved in the gap in the subsequent step, and the more invisible to the gap in the gap, the liquid is not easy. It is replaced' so that the etching of the side on which the scribe line is formed can be further suppressed.
繼而，如圖1(d)所示，將已貼合之基板丨、2浸潰於蝕 刻液7中错刻液7係可使用敗化物溶液（氟化氫、氣化録、 氟化鉀、氟化鈉等）等之玻璃蝕刻用之市售品。 基板1 2之外側面1 a、2a(貼合面之相反側之面）均受 到#刻而内側自i b、2b之蚀刻被抑制。進而，由於切割 面被者，银刻液不易滲入至内部，故而藉由雷射劃線加工 而形成之劃線3、4幾乎不會被腐蝕而殘留。Then, as shown in FIG. 1(d), the bonded substrate 丨, 2 is immersed in the etchant 7 and the erroneous liquid 7 can be used as a hydride solution (hydrogen fluoride, gasification, potassium fluoride, fluorination). A commercially available product for glass etching such as sodium or the like. The outer faces 1 a and 2 a of the substrate 1 2 (the faces on the opposite sides of the bonding faces) are all inspected by etching, and the etching of the inner faces i b and 2 b is suppressed. Further, since the silver engraving liquid does not easily penetrate into the inside due to the cut surface, the scribe lines 3 and 4 formed by the laser scribing process are hardly corroded and remain.
接著，蝕刻繼續進行，除去外側面側直至劃線3、4之 深度為止，藉此如® i⑷所示"分割為各個單位顯示基板8。 於進行分割之同時將單位顯示基板8自㈣液7中取出， 藉此如圖1(f)所示，劃線3、4之端面大體上保留原狀地殘 留，形。成端面品質、端面強度優異之單位顯示基板8。而且， 可使單位顯示基板8之板厚薄至劃線3、4之深度(例如〇〇1 mm〜〇_2 mm)為止。 但與圖2所示之 之劃線之位置不 上述實施形態令並未設置端子區域， 先前例相同地，亦可藉由使兩片基板之間 r— 15 1375663 同而形成端子區域。 本發明之加工方法可用於貼合玻璃基板之薄膜化。 【圖式簡單說明】 圖1 (a)〜（f)係表示本發明之一實施形態即貼合玻璃基 板之加工方法之圖β 圖2(a)〜（d)係表示習知利用蝕刻之加工方法之圖。 圖3(a)〜（c)係表示厚基板之雷射劃線加工之圖。 圖4(a)〜（c)係表示薄基板之雷射劃線加工之圖。 【主要元件符號說明】 1 CF用母玻璃基板 2 TFT用母玻璃基板 3 4 劃線 劃線 5 端材區域 6 密封劑 7 餘刻液 8 單位顯示基板 CF 彩色慮光片 TFT 薄膜電晶體Then, the etching is continued, and the outer side surface side is removed to the depths of the scribe lines 3 and 4, whereby the substrate 8 is divided into individual units as shown by ® i(4). The unit display substrate 8 is taken out from the (four) liquid 7 while being divided, whereby the end faces of the scribe lines 3 and 4 are substantially left as they are, as shown in Fig. 1(f). The substrate 8 is shown in a unit having excellent end surface quality and end surface strength. Further, the thickness of the unit display substrate 8 can be made thinner to the depth of the scribe lines 3, 4 (for example, 〇〇1 mm to 〇_2 mm). However, the position of the scribe line shown in Fig. 2 is not the above embodiment. The terminal region is not provided. In the same manner as in the previous example, the terminal region can be formed by the same r- 15 1375663 between the two substrates. The processing method of the present invention can be used to bond a thin film of a glass substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 (a) to (f) are views showing a method of processing a laminated glass substrate according to an embodiment of the present invention. Figs. 2(a) to 2(d) show a conventional use of etching. A diagram of the processing method. 3(a) to (c) are views showing laser scribing processing of a thick substrate. 4(a) to 4(c) are views showing laser scribing processing of a thin substrate. [Description of main component symbols] 1 Mother glass substrate for CF 2 Mother glass substrate for TFT 3 4 Cross-line Marking 5 End material area 6 Sealant 7 Remnant 8 Unit display substrate CF Color filter TFT film transistor