[go: up one dir, main page]

TWI369009B - Light-emitting chip device with high thermal conductivity - Google Patents

Light-emitting chip device with high thermal conductivity

Info

Publication number
TWI369009B
TWI369009B TW096135296A TW96135296A TWI369009B TW I369009 B TWI369009 B TW I369009B TW 096135296 A TW096135296 A TW 096135296A TW 96135296 A TW96135296 A TW 96135296A TW I369009 B TWI369009 B TW I369009B
Authority
TW
Taiwan
Prior art keywords
light
thermal conductivity
high thermal
emitting chip
chip device
Prior art date
Application number
TW096135296A
Other languages
English (en)
Other versions
TW200915603A (en
Inventor
Ray Hua Horng
Dong Sing Wuu
Shao Hua Huang
Chuang Yu Hsieh
Chao-Kun Lin
Original Assignee
Nat Univ Chung Hsing
Bridgelux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Chung Hsing, Bridgelux Inc filed Critical Nat Univ Chung Hsing
Priority to TW096135296A priority Critical patent/TWI369009B/zh
Priority to US12/039,563 priority patent/US20090127575A1/en
Priority to PCT/US2008/076727 priority patent/WO2009039212A1/en
Priority to JP2010525931A priority patent/JP2010541209A/ja
Priority to KR1020107006534A priority patent/KR101501307B1/ko
Publication of TW200915603A publication Critical patent/TW200915603A/zh
Priority to US12/701,336 priority patent/US8895332B2/en
Application granted granted Critical
Publication of TWI369009B publication Critical patent/TWI369009B/zh
Priority to US14/121,840 priority patent/USRE46004E1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
TW096135296A 2007-09-21 2007-09-21 Light-emitting chip device with high thermal conductivity TWI369009B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW096135296A TWI369009B (en) 2007-09-21 2007-09-21 Light-emitting chip device with high thermal conductivity
US12/039,563 US20090127575A1 (en) 2007-09-21 2008-02-28 Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same
PCT/US2008/076727 WO2009039212A1 (en) 2007-09-21 2008-09-17 Light-emitting diode chip with high extraction and method for manufacturing the same
JP2010525931A JP2010541209A (ja) 2007-09-21 2008-09-17 高い光取り出しの発光ダイオードチップとその製造方法
KR1020107006534A KR101501307B1 (ko) 2007-09-21 2008-09-17 발광 장치 제작 방법
US12/701,336 US8895332B2 (en) 2007-09-21 2010-02-05 Light-emitting diode chip with high light extraction and method for manufacturing the same
US14/121,840 USRE46004E1 (en) 2007-09-21 2014-10-23 Light-emitting chip device with high thermal conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096135296A TWI369009B (en) 2007-09-21 2007-09-21 Light-emitting chip device with high thermal conductivity

Publications (2)

Publication Number Publication Date
TW200915603A TW200915603A (en) 2009-04-01
TWI369009B true TWI369009B (en) 2012-07-21

Family

ID=40672552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135296A TWI369009B (en) 2007-09-21 2007-09-21 Light-emitting chip device with high thermal conductivity

Country Status (3)

Country Link
US (2) US20090127575A1 (zh)
JP (1) JP2010541209A (zh)
TW (1) TWI369009B (zh)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI369009B (en) 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
US7781780B2 (en) 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
US8105853B2 (en) * 2008-06-27 2012-01-31 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
JP2010062493A (ja) * 2008-09-08 2010-03-18 Stanley Electric Co Ltd 半導体発光素子および半導体発光素子の製造方法
KR101047718B1 (ko) * 2008-11-26 2011-07-08 엘지이노텍 주식회사 발광 소자
KR101134732B1 (ko) * 2009-02-17 2012-04-19 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JPWO2010100942A1 (ja) * 2009-03-05 2012-09-06 株式会社小糸製作所 発光モジュール、発光モジュールの製造方法、および灯具ユニット
TWI479689B (zh) * 2009-04-16 2015-04-01 Nat Univ Chung Hsing Double - sided Coarse Vertical Guided Light Emitting Diodes and Their Making Methods
DE102009036843A1 (de) * 2009-08-10 2011-02-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode
US8783915B2 (en) 2010-02-11 2014-07-22 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
KR20110096680A (ko) * 2010-02-23 2011-08-31 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101081135B1 (ko) 2010-03-15 2011-11-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
TWI398022B (zh) * 2010-03-17 2013-06-01 國立中興大學 Separation method of epitaxial substrate of photovoltaic element
CN102244168A (zh) * 2010-05-14 2011-11-16 展晶科技(深圳)有限公司 发光二极管及其制造方法
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
DE102010036180A1 (de) * 2010-09-02 2012-03-08 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
TW201234574A (en) 2011-02-01 2012-08-16 Pinecone En Inc Light-emitting-diode array and manufacturing method thereof
TWI422068B (zh) * 2011-02-18 2014-01-01 Univ Nat Cheng Kung 粗化方法及具粗化表面之發光二極體製備方法
US8574938B2 (en) * 2011-07-19 2013-11-05 Ncku Research And Development Foundation Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
US9064883B2 (en) * 2011-08-25 2015-06-23 Intel Mobile Communications GmbH Chip with encapsulated sides and exposed surface
KR101934138B1 (ko) 2011-08-30 2018-12-31 루미리즈 홀딩 비.브이. 기판을 반도체 발광 소자에 본딩하는 방법
CN104205369A (zh) * 2012-03-19 2014-12-10 皇家飞利浦有限公司 在硅衬底上生长的发光器件
JP5985322B2 (ja) 2012-03-23 2016-09-06 株式会社東芝 半導体発光装置及びその製造方法
JP6024533B2 (ja) * 2012-03-28 2016-11-16 日亜化学工業株式会社 サファイア基板及びその製造方法並びに窒化物半導体発光素子
CN103367555B (zh) * 2012-03-28 2016-01-20 清华大学 发光二极管的制备方法
US20130285010A1 (en) * 2012-04-27 2013-10-31 Phostek, Inc. Stacked led device with posts in adhesive layer
US8969198B2 (en) 2012-06-04 2015-03-03 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
WO2014011964A1 (en) * 2012-07-12 2014-01-16 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
JP5843750B2 (ja) * 2012-12-14 2016-01-13 ポリプラスチックス株式会社 金属部品の製造方法、及び複合成形体
TWI483434B (zh) * 2013-02-18 2015-05-01 隆達電子股份有限公司 發光二極體的轉置基材與使用該轉置基材的發光裝置製造方法
CN105981131B (zh) * 2014-02-10 2019-12-03 伦斯勒理工学院 半导体的选择性电化学蚀刻
KR20160034534A (ko) 2014-09-19 2016-03-30 삼성전자주식회사 반도체 발광 소자
US9966260B1 (en) * 2015-09-25 2018-05-08 Apple Inc. Surface modification process for laser application
KR20200095210A (ko) * 2019-01-31 2020-08-10 엘지전자 주식회사 반도체 발광 소자, 이의 제조 방법, 및 이를 포함하는 디스플레이 장치
DE102019106931A1 (de) 2019-03-19 2020-09-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement, optoelektronische Halbleitervorrichtung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
CN109742223A (zh) * 2019-03-20 2019-05-10 中芯长电半导体（江阴）有限公司 扇出型led的封装结构及封装方法
DE102019107920A1 (de) * 2019-03-27 2020-10-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
TW202125006A (zh) * 2019-12-20 2021-07-01 台灣愛司帝科技股份有限公司 影像顯示器
US11843077B2 (en) 2020-02-11 2023-12-12 Seoul Viosys Co., Ltd. Unit pixel having light emitting device and displaying apparatus
JP7136311B1 (ja) * 2021-12-03 2022-09-13 信越半導体株式会社 接合型半導体ウェーハの製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1430611A (en) * 1973-01-11 1976-03-31 Marconi Co Ltd Liquid crystal display devices
DE68919253T2 (de) * 1988-03-31 1995-06-22 Ise Electronics Corp Bildröhre, als Lichtquelle verwendet.
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same
US6692979B2 (en) * 2001-08-13 2004-02-17 Optoic Technology, Inc. Methods of fabricating optoelectronic IC modules
TW523939B (en) * 2001-11-07 2003-03-11 Nat Univ Chung Hsing High-efficient light emitting diode and its manufacturing method
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
JP3872398B2 (ja) * 2002-08-07 2007-01-24 信越半導体株式会社 発光素子の製造方法及び発光素子
JP4393306B2 (ja) * 2003-10-30 2010-01-06 シャープ株式会社 半導体発光素子およびその製造方法並びに半導体装置
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US7563625B2 (en) * 2005-01-11 2009-07-21 SemiLEDs Optoelectronics Co., Ltd. Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
US20060237735A1 (en) 2005-04-22 2006-10-26 Jean-Yves Naulin High-efficiency light extraction structures and methods for solid-state lighting
US20070004066A1 (en) * 2005-07-01 2007-01-04 Dong-Sing Wuu Method for manufacturing a light emitting device and a light emitting device manufactured therefrom
JP2007256496A (ja) * 2006-03-22 2007-10-04 Fujifilm Corp 液晶表示装置
US20070272930A1 (en) * 2006-05-26 2007-11-29 Huan-Che Tseng Light-emitting diode package
TWI369009B (en) 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
KR101501307B1 (ko) 2007-09-21 2015-03-10 가부시끼가이샤 도시바 발광 장치 제작 방법

Also Published As

Publication number Publication date
US20090127575A1 (en) 2009-05-21
JP2010541209A (ja) 2010-12-24
TW200915603A (en) 2009-04-01
USRE46004E1 (en) 2016-05-17

Similar Documents

Publication Publication Date Title
TWI369009B (en) Light-emitting chip device with high thermal conductivity
ZA200906544B (en) Thermal device
EP2227559A4 (en) DEVICE FOR APPLYING THERMAL CYCLES
GB201005115D0 (en) Light-emitting device
DE502007003871D1 (de) Stromschiene mit Wärmeableitung
TWI372478B (en) Light-emitting device
SG10201405491VA (en) Light-emitting element, light-emitting device, lighting device, and electronic device
GB2453464B (en) Light-emitting semiconductor device
GB0720165D0 (en) Light-emitting device
EP2237382A4 (en) SEMICONDUCTOR LIGHT EMITTING DEVICE
ZA200909151B (en) Heat dissipating device having linear heat dissipating unit and fanless led lamp using the device
ZA201004843B (en) Embedded type lamp with heat radiating device
TWI368722B (en) Heat dissipation structure
GB2453438B (en) Thermal insulation device
TWI348885B (en) Heat dissipation module
GB2455069B (en) Improved led device
TWI371873B (en) Semiconductor light-emitting device
TWI349847B (en) Heat dissipation device
TWI340317B (en) Heat dissipation device
TWI316386B (en) Heat dissipation device
TWI370526B (en) Semiconductor device having heat sink
GB0820739D0 (en) Fluid-convection heat dissipation device
PL2154452T3 (pl) Urządzenie chłodnicze z wymuszonym chłodzeniem
TWI319848B (en) Heat dissipation device
TWI319846B (en) Heat dissipating device with heat pipe

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees