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TWI369009B - Light-emitting chip device with high thermal conductivity - Google Patents

Light-emitting chip device with high thermal conductivity

Info

Publication number
TWI369009B
TWI369009B TW096135296A TW96135296A TWI369009B TW I369009 B TWI369009 B TW I369009B TW 096135296 A TW096135296 A TW 096135296A TW 96135296 A TW96135296 A TW 96135296A TW I369009 B TWI369009 B TW I369009B
Authority
TW
Taiwan
Prior art keywords
light
thermal conductivity
high thermal
emitting chip
chip device
Prior art date
Application number
TW096135296A
Other languages
Chinese (zh)
Other versions
TW200915603A (en
Inventor
Ray Hua Horng
Dong Sing Wuu
Shao Hua Huang
Chuang Yu Hsieh
Chao-Kun Lin
Original Assignee
Nat Univ Chung Hsing
Bridgelux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Chung Hsing, Bridgelux Inc filed Critical Nat Univ Chung Hsing
Priority to TW096135296A priority Critical patent/TWI369009B/en
Priority to US12/039,563 priority patent/US20090127575A1/en
Priority to PCT/US2008/076727 priority patent/WO2009039212A1/en
Priority to JP2010525931A priority patent/JP2010541209A/en
Priority to KR1020107006534A priority patent/KR101501307B1/en
Publication of TW200915603A publication Critical patent/TW200915603A/en
Priority to US12/701,336 priority patent/US8895332B2/en
Application granted granted Critical
Publication of TWI369009B publication Critical patent/TWI369009B/en
Priority to US14/121,840 priority patent/USRE46004E1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
TW096135296A 2007-09-21 2007-09-21 Light-emitting chip device with high thermal conductivity TWI369009B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW096135296A TWI369009B (en) 2007-09-21 2007-09-21 Light-emitting chip device with high thermal conductivity
US12/039,563 US20090127575A1 (en) 2007-09-21 2008-02-28 Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same
PCT/US2008/076727 WO2009039212A1 (en) 2007-09-21 2008-09-17 Light-emitting diode chip with high extraction and method for manufacturing the same
JP2010525931A JP2010541209A (en) 2007-09-21 2008-09-17 Light emitting diode chip with high light extraction and manufacturing method thereof
KR1020107006534A KR101501307B1 (en) 2007-09-21 2008-09-17 Light-emitting device manufacturing method
US12/701,336 US8895332B2 (en) 2007-09-21 2010-02-05 Light-emitting diode chip with high light extraction and method for manufacturing the same
US14/121,840 USRE46004E1 (en) 2007-09-21 2014-10-23 Light-emitting chip device with high thermal conductivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096135296A TWI369009B (en) 2007-09-21 2007-09-21 Light-emitting chip device with high thermal conductivity

Publications (2)

Publication Number Publication Date
TW200915603A TW200915603A (en) 2009-04-01
TWI369009B true TWI369009B (en) 2012-07-21

Family

ID=40672552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135296A TWI369009B (en) 2007-09-21 2007-09-21 Light-emitting chip device with high thermal conductivity

Country Status (3)

Country Link
US (2) US20090127575A1 (en)
JP (1) JP2010541209A (en)
TW (1) TWI369009B (en)

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TWI369009B (en) 2007-09-21 2012-07-21 Nat Univ Chung Hsing Light-emitting chip device with high thermal conductivity
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WO2010100942A1 (en) * 2009-03-05 2010-09-10 株式会社小糸製作所 Light-emitting module, method of producing light-emitting module, and lighting unit
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DE102009036843A1 (en) * 2009-08-10 2011-02-17 Osram Opto Semiconductors Gmbh Method for producing a light-emitting diode and light-emitting diode
US8783915B2 (en) 2010-02-11 2014-07-22 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
KR20110096680A (en) * 2010-02-23 2011-08-31 엘지이노텍 주식회사 Light emitting device, light emitting device manufacturing method and light emitting device package
KR101081135B1 (en) 2010-03-15 2011-11-07 엘지이노텍 주식회사 Light emitting device, method for fabricating the light emitting device and light emitting device package
TWI398022B (en) * 2010-03-17 2013-06-01 Univ Nat Chunghsing Separation method of epitaxial substrate of photovoltaic element
CN102244168A (en) * 2010-05-14 2011-11-16 展晶科技(深圳)有限公司 LED (light emitting diode) and manufacturing method thereof
KR101735670B1 (en) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 A light emitting device
DE102010036180A1 (en) * 2010-09-02 2012-03-08 Osram Opto Semiconductors Gmbh LED chip
TW201234574A (en) 2011-02-01 2012-08-16 Pinecone En Inc Light-emitting-diode array and manufacturing method thereof
TWI422068B (en) * 2011-02-18 2014-01-01 Univ Nat Cheng Kung Roughening method and preparation method of light-emitting diode with roughened surface
US8574938B2 (en) * 2011-07-19 2013-11-05 Ncku Research And Development Foundation Using isolated epitaxial structures in glue bonding for multiple group-III nitride LEDS on a single substrate
US9064883B2 (en) * 2011-08-25 2015-06-23 Intel Mobile Communications GmbH Chip with encapsulated sides and exposed surface
CN107086198B (en) * 2011-08-30 2020-09-11 亮锐控股有限公司 Method of bonding substrate to semiconductor light emitting device
CN104205369A (en) * 2012-03-19 2014-12-10 皇家飞利浦有限公司 Light-emitting devices grown on silicon substrates
JP5985322B2 (en) 2012-03-23 2016-09-06 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP6024533B2 (en) * 2012-03-28 2016-11-16 日亜化学工業株式会社 Sapphire substrate, manufacturing method thereof, and nitride semiconductor light emitting device
CN103367555B (en) * 2012-03-28 2016-01-20 清华大学 The preparation method of light-emitting diode
US20130285010A1 (en) * 2012-04-27 2013-10-31 Phostek, Inc. Stacked led device with posts in adhesive layer
US8969198B2 (en) 2012-06-04 2015-03-03 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9660043B2 (en) 2012-06-04 2017-05-23 Sensor Electronic Technology, Inc. Ohmic contact to semiconductor layer
US9793439B2 (en) 2012-07-12 2017-10-17 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
US9312448B2 (en) * 2012-07-12 2016-04-12 Sensor Electronic Technology, Inc. Metallic contact for optoelectronic semiconductor device
JP5843750B2 (en) * 2012-12-14 2016-01-13 ポリプラスチックス株式会社 Metal part manufacturing method and composite molded body
TWI483434B (en) * 2013-02-18 2015-05-01 Lextar Electronics Corp Transposed substrate of light-emitting diode and method of manufacturing light-emitting device using the same
US9922838B2 (en) * 2014-02-10 2018-03-20 Rensselaer Polytechnic Institute Selective, electrochemical etching of a semiconductor
KR20160034534A (en) 2014-09-19 2016-03-30 삼성전자주식회사 Semiconductor light emitting device
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DE102019106931A1 (en) * 2019-03-19 2020-09-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelectronic semiconductor component, optoelectronic semiconductor device and method for producing an optoelectronic semiconductor component
CN109742223A (en) * 2019-03-20 2019-05-10 中芯长电半导体（江阴）有限公司 The encapsulating structure and packaging method of fan-out-type LED
DE102019107920A1 (en) * 2019-03-27 2020-10-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Method for producing an optoelectronic component and an optoelectronic component
TW202125006A (en) * 2019-12-20 2021-07-01 台灣愛司帝科技股份有限公司 Image display
US11843077B2 (en) * 2020-02-11 2023-12-12 Seoul Viosys Co., Ltd. Unit pixel having light emitting device and displaying apparatus

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WO2009039212A1 (en) 2007-09-21 2009-03-26 Bridgelux, Inc. Light-emitting diode chip with high extraction and method for manufacturing the same

Also Published As

Publication number Publication date
USRE46004E1 (en) 2016-05-17
JP2010541209A (en) 2010-12-24
TW200915603A (en) 2009-04-01
US20090127575A1 (en) 2009-05-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees