[go: up one dir, main page]

TWI368949B - Method for fabricating semiconductor device with vertical channel transistor - Google Patents

Method for fabricating semiconductor device with vertical channel transistor

Info

Publication number
TWI368949B
TWI368949B TW097124744A TW97124744A TWI368949B TW I368949 B TWI368949 B TW I368949B TW 097124744 A TW097124744 A TW 097124744A TW 97124744 A TW97124744 A TW 97124744A TW I368949 B TWI368949 B TW I368949B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
channel transistor
vertical channel
fabricating semiconductor
fabricating
Prior art date
Application number
TW097124744A
Other languages
English (en)
Other versions
TW200929375A (en
Inventor
Sang-Hoon Cho
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200929375A publication Critical patent/TW200929375A/zh
Application granted granted Critical
Publication of TWI368949B publication Critical patent/TWI368949B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW097124744A 2007-12-24 2008-07-01 Method for fabricating semiconductor device with vertical channel transistor TWI368949B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070136437A KR100912965B1 (ko) 2007-12-24 2007-12-24 수직 채널 트랜지스터를 구비한 반도체 소자의 제조 방법

Publications (2)

Publication Number Publication Date
TW200929375A TW200929375A (en) 2009-07-01
TWI368949B true TWI368949B (en) 2012-07-21

Family

ID=40789163

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097124744A TWI368949B (en) 2007-12-24 2008-07-01 Method for fabricating semiconductor device with vertical channel transistor

Country Status (5)

Country Link
US (2) US7670909B2 (zh)
JP (1) JP2009152585A (zh)
KR (1) KR100912965B1 (zh)
CN (1) CN101471304B (zh)
TW (1) TWI368949B (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100675288B1 (ko) * 2005-11-04 2007-01-29 삼성전자주식회사 다중 채널 트랜지스터들을 갖는 반도체 소자의 제조방법들및 그에 의해 제조된 반도체 소자들
KR100900148B1 (ko) * 2007-10-31 2009-06-01 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
KR101035410B1 (ko) 2007-12-24 2011-05-20 주식회사 하이닉스반도체 반도체 소자의 수직 채널 트랜지스터 형성 방법 및 이를위한 워드라인용 마스크의 레이아웃
KR100956601B1 (ko) * 2008-03-25 2010-05-11 주식회사 하이닉스반도체 반도체 소자의 수직 채널 트랜지스터 및 그 형성 방법
KR101073073B1 (ko) * 2008-10-17 2011-10-12 주식회사 하이닉스반도체 수직게이트를 구비한 반도체장치 및 그 제조 방법
KR101576957B1 (ko) * 2009-10-22 2015-12-14 삼성전자주식회사 수직형 반도체 소자, 메모리 소자, 및 그 제조 방법
KR101096187B1 (ko) 2009-11-30 2011-12-22 주식회사 하이닉스반도체 반도체 장치 제조 방법
US8148222B2 (en) * 2009-12-10 2012-04-03 Micron Technology, Inc. Cross-point diode arrays and methods of manufacturing cross-point diode arrays
KR102008317B1 (ko) * 2012-03-07 2019-08-07 삼성전자주식회사 반도체 소자 및 반도체 소자의 제조방법
US8699255B2 (en) * 2012-04-01 2014-04-15 Nanya Technology Corp. Memory array with hierarchical bit line structure
KR102304725B1 (ko) * 2014-10-16 2021-09-27 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법, 박막 트랜지스터 어레이 기판을 포함하는 유기 발광 표시 장치
US10396208B2 (en) 2017-01-13 2019-08-27 International Business Machines Corporation Vertical transistors with improved top source/drain junctions
US10049877B1 (en) * 2017-05-25 2018-08-14 Nanya Technology Corporation Patterning method
US10461173B1 (en) 2018-05-25 2019-10-29 Globalfoundries Inc. Methods, apparatus, and manufacturing system for forming source and drain regions in a vertical field effect transistor
US11908932B2 (en) * 2020-07-23 2024-02-20 Micron Technology, Inc. Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems
EP4340563A4 (en) 2021-07-09 2024-10-30 Changxin Memory Technologies, Inc. Preparation method for semiconductor structure, and semiconductor structure
JP7604654B2 (ja) * 2021-07-16 2024-12-23 チャンシン メモリー テクノロジーズ インコーポレイテッド 半導体構造及びその製造方法
CN116801610A (zh) * 2022-03-15 2023-09-22 长鑫存储技术有限公司 半导体器件及其形成方法
US12424542B2 (en) * 2022-05-31 2025-09-23 Changxin Memory Technologies, Inc. Semiconductor structure and method for manufacturing same
CN115020376A (zh) 2022-05-31 2022-09-06 长鑫存储技术有限公司 半导体结构及其制作方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2701377B2 (ja) * 1988-10-22 1998-01-21 ソニー株式会社 メモリ装置及びその製造方法
DE19519160C1 (de) * 1995-05-24 1996-09-12 Siemens Ag DRAM-Zellenanordnung und Verfahren zu deren Herstellung
US5776815A (en) * 1995-09-01 1998-07-07 Micron Technology, Inc. Method for forming a contact intermediate two adjacent electrical components
TW326553B (en) 1996-01-22 1998-02-11 Handotai Energy Kenkyusho Kk Semiconductor device and method of fabricating same
JPH11103026A (ja) * 1997-09-19 1999-04-13 Texas Instr Inc <Ti> 交差点ｄｒａｍセルとその処理工程
DE19811882A1 (de) 1998-03-18 1999-09-23 Siemens Ag DRAM-Zellenanordnung und Verfahren zu deren Herstellung
US6403421B1 (en) * 1998-04-22 2002-06-11 Sony Corporation Semiconductor nonvolatile memory device and method of producing the same
JP3877997B2 (ja) * 2001-11-05 2007-02-07 プロモス テクノロジーズ インコーポレイテッド ダイナミックランダムアクセスメモリセルを形成する方法
US6670642B2 (en) 2002-01-22 2003-12-30 Renesas Technology Corporation. Semiconductor memory device using vertical-channel transistors
US7122425B2 (en) * 2004-08-24 2006-10-17 Micron Technology, Inc. Methods of forming semiconductor constructions
US7442976B2 (en) * 2004-09-01 2008-10-28 Micron Technology, Inc. DRAM cells with vertical transistors
KR100618875B1 (ko) * 2004-11-08 2006-09-04 삼성전자주식회사 수직 채널 ｍｏｓ 트랜지스터를 구비한 반도체 메모리소자 및 그 제조방법
US7355230B2 (en) 2004-11-30 2008-04-08 Infineon Technologies Ag Transistor array for semiconductor memory devices and method for fabricating a vertical channel transistor array
KR100618904B1 (ko) * 2005-06-30 2006-09-01 삼성전자주식회사 ＦｉｎＦＥＴ을 구비하는 반도체 소자 및 그 제조 방법
KR100640653B1 (ko) * 2005-07-15 2006-11-01 삼성전자주식회사 수직채널을 가진 반도체소자의 제조방법 및 이를 이용한반도체소자
KR100734266B1 (ko) 2005-07-15 2007-07-02 삼성전자주식회사 콘택 저항이 개선된 수직 채널 반도체 소자 및 그 제조방법
KR100800469B1 (ko) * 2005-10-05 2008-02-01 삼성전자주식회사 매몰 비트 라인에 접속된 수직형 트랜지스터를 포함하는회로 소자 및 제조 방법
KR100675285B1 (ko) * 2005-10-10 2007-01-29 삼성전자주식회사 수직 트랜지스터를 갖는 반도체소자 및 그 제조방법
KR100660881B1 (ko) 2005-10-12 2006-12-26 삼성전자주식회사 수직 채널 트랜지스터를 구비한 반도체 소자 및 그 제조방법
KR100688576B1 (ko) * 2005-10-14 2007-03-02 삼성전자주식회사 수직채널 트랜지스터를 갖는 반도체 메모리 장치 및 그제조방법
KR100653712B1 (ko) * 2005-11-14 2006-12-05 삼성전자주식회사 핀펫에서 활성영역과 실질적으로 동일한 상면을 갖는소자분리막이 배치된 반도체 장치들 및 그 형성방법들
KR100689514B1 (ko) * 2006-01-23 2007-03-02 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
KR100685659B1 (ko) * 2006-01-26 2007-02-26 삼성전자주식회사 반도체 장치 및 그 제조 방법
TWI294644B (en) * 2006-01-27 2008-03-11 Nanya Technology Corp Methods of semiconductor devices having recessed structures
KR100734313B1 (ko) * 2006-02-09 2007-07-02 삼성전자주식회사 수직 채널을 갖는 반도체 소자 및 그 제조방법
KR100723527B1 (ko) * 2006-02-13 2007-05-30 삼성전자주식회사 수직 채널 트랜지스터를 구비한 반도체 소자의 제조방법 및그에 의해 제조된 반도체 소자
KR100696764B1 (ko) * 2006-03-23 2007-03-19 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
US7846845B2 (en) * 2006-10-26 2010-12-07 Applied Materials, Inc. Integrated method for removal of halogen residues from etched substrates in a processing system
US7919800B2 (en) * 2007-02-26 2011-04-05 Micron Technology, Inc. Capacitor-less memory cells and cell arrays

Also Published As

Publication number Publication date
KR100912965B1 (ko) 2009-08-20
CN101471304B (zh) 2013-02-27
US7670909B2 (en) 2010-03-02
TW200929375A (en) 2009-07-01
US20090163017A1 (en) 2009-06-25
KR20090068713A (ko) 2009-06-29
JP2009152585A (ja) 2009-07-09
CN101471304A (zh) 2009-07-01
USRE44473E1 (en) 2013-09-03

Similar Documents

Publication Publication Date Title
TWI368949B (en) Method for fabricating semiconductor device with vertical channel transistor
TWI369717B (en) Method for forming semiconductor device
TWI348746B (en) Method for fabricating semiconductor device
TWI366892B (en) Method for fabricating semiconductor device
TWI369780B (en) Semiconductor device having vertical pillar transistors and method for manufacturing the same
TWI347635B (en) Method for fabricating semiconductor device including recess gate
TWI370516B (en) Semiconductor device manufacturing method
TWI366875B (en) Method of manufacturing semiconductor device
TWI368950B (en) Semiconductor device having vertical and horizontal type gates and method for fabricating the same
TWI366927B (en) Process for producing compound semiconductor device
TWI370562B (en) Semiconductor light-emitting device and method for producing semiconductor light-emitting device
TWI370596B (en) Method for manufacturing semiconductor optical device
EP2325882A4 (en) Method for manufacturing semiconductor device
GB0915201D0 (en) Epitaxial substrate for field effect transistor
SG10201403913PA (en) Method for manufacturing semiconductor device
EP2259226A4 (en) GATE ARRANGEMENT
GB0816666D0 (en) Semiconductor field effect transistor and method for fabricating the same
TWI368314B (en) Recess channel transistor
TWI368279B (en) Method for fabricating high voltage drift in semiconductor device
EP2149842A4 (en) SEMICONDUCTOR DEVICE
TWI368992B (en) Vertical semiconductor device
GB0711075D0 (en) Electrolyte-gated field-effect transistor
TWI366864B (en) Method for fabricating semiconductor device
GB0811962D0 (en) Improved fabrication method for thin-film field-effect transistors
TWI371849B (en) Transistor of semiconductor device and method for fabricating the same

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees